Device Modeling Report




COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER / STANDARD
PART NUMBER: D2S6M
MANUFACTURER: SHINDENGEN




              Bee Technologies Inc.


 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                  Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




          All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit

                     R1


                      0.001m

           V1
   0Vdc                                D1



                               D2S6M




                      0




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd(V)            Vfwd(V)
           Ifwd(A)                                                    %Error
                            Measurement         Simulation
                     0.1           0.300               0.298                  -0.67
                     0.2           0.320               0.322                   0.63
                     0.5           0.370               0.369                  -0.27
                       1           0.424               0.425                   0.24
                       2           0.510               0.514                   0.78
                       5           0.740               0.736                  -0.54
                      10           1.060               1.068                   0.75




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit


                          V2


   V2 = 60                     0Vdc
   V1 = 0
   TD = 0                                    D1
   TR = 10ns    V1
   TF = 50ns
   PW = 5us
   PER = 10us
                                   D2S6M




                               0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                               Cj(pF)            Cj(pF)
            Vrev(V)                                                 %Error
                            Measurement        Simulation
                      0.5        352.000           360.700                     2.47
                        1        290.000           300.100                     3.48
                        2        230.000           235.200                     2.26
                        5        150.000           155.500                     3.67
                       10        120.000           118.800                    -1.00
                       20         87.000            87.100                     0.11
                       60         52.000            53.800                     3.46




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

SPICE MODEL of D2S6M (Standard Model) in SPICE PARK

  • 1.
    Device Modeling Report COMPONENTS: DIODE/SCHOOTTKY RECTIFIER / STANDARD PART NUMBER: D2S6M MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2.
    PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3.
    Forward Current Characteristic CircuitSimulation Result Evaluation Circuit R1 0.001m V1 0Vdc D1 D2S6M 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4.
    Comparison Graph Circuit SimulationResult Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.1 0.300 0.298 -0.67 0.2 0.320 0.322 0.63 0.5 0.370 0.369 -0.27 1 0.424 0.425 0.24 2 0.510 0.514 0.78 5 0.740 0.736 -0.54 10 1.060 1.068 0.75 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5.
    Junction Capacitance Characteristic CircuitSimulation Result Evaluation Circuit V2 V2 = 60 0Vdc V1 = 0 TD = 0 D1 TR = 10ns V1 TF = 50ns PW = 5us PER = 10us D2S6M 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6.
    Comparison Graph Circuit SimulationResult Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0.5 352.000 360.700 2.47 1 290.000 300.100 3.48 2 230.000 235.200 2.26 5 150.000 155.500 3.67 10 120.000 118.800 -1.00 20 87.000 87.100 0.11 60 52.000 53.800 3.46 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004