This document summarizes a research article that introduces a model for estimating the spatiotemporal distribution of concentration of a medicinal product as it is transported through an organism. The model is based on solving the second Fick's law of diffusion and accounts for how the diffusion coefficient and interaction parameters may change over time and location in the organism. Analytical methods are used to solve the model equations and obtain approximations of the concentration distribution under different infusion conditions.
ON ANALYTICAL APPROACH FOR ANALYSIS OF DISSOLUTION OF A MEDICINAL PRODUCT IN ...pbij
In this paper we introduce a model of dissolution of a medicinal product in a organism with account of
changing of conditions. The model gives a possibility to estimate spatio-temporal distribution of
concentration of a medicinal product during dissolution. We also consider an analytical approach to
analyze the above dissolution. We consider a possibility to accelerate and decelerate of the above
dissolution.
Optimization of Manufacturing of Circuits XOR to Decrease Their Dimensionsijrap
We analyzed possibility to increase density of elements of integrated circuits. We illustrate the possibility
by example of manufacturing of a circuit XOR. Framework the paper we consider a heterostructure which
includes into itself a substrate and an epitaxial layer with specific configuration. Several required areas of
the heterostructure have been doped by diffusion and/or ion implantation. After that we consider optimized
annealing of dopant and/or radiation defects.
On Increasing of Density of Elements of Double Boost DC-DC Converter. Influen...csijjournal
In this paper we introduce an approach to increase density of field-effect heterotransistors and heterodiodes in the framework of double boost DC-DC converter. In the framework of the approach we consider manufacturing the inverter in hetero structure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed in the framework of the optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
On Analytical Approach to Prognosis of Manufacturing of Voltage Divider Biasi...BRNSS Publication Hub
In this paper, we introduce an approach for prognosis of manufacturing of voltage divider biasing common emitter amplifier based on bipolar transistors with account mismatch-induced stress. Based on this prognosis, we formulate some recommendations for optimization of manufacturing of the amplifier. Main aims of the optimization are as follows: (1) Decreasing dimensions of elements of the considered operational amplifier and (2) increasing of performance and reliability of the considered bipolar transistors. Dimensions of considered bipolar transistors will be decreased due to manufacture of these transistors framework heterostructure with specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects. Performance and reliability of the above bipolar transistors could be increased by optimization of annealing of dopant and/or radiation defects and using inhomogeneity of the properties of heterostructure. Choosing of inhomogeneity properties of heterostructure leads to increasing of compactness of distribution of concentration of dopant. At the same time, one can obtain increasing of homogeneity of the above concentration. In this paper, we also introduce an analytical approach for prognosis of technological process of manufacturing of the considered operational amplifier. The approach gives a possibility to take into account variation of parameters of processes in space and at the same time in space. At the same time, one can take into account nonlinearity of the considered processes.
On optimization ofON OPTIMIZATION OF DOPING OF A HETEROSTRUCTURE DURING MANUF...ijcsitcejournal
We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δ-
doped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After
the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize
annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more
compact p-i-n-heterodiodes
Optimization of Technological Process to Decrease Dimensions of Circuits XOR,...ijfcstjournal
The paper describes an approach of increasing of integration rate of elements of integrated circuits. The
approach has been illustrated by example of manufacturing of a circuit XOR. Framework the approach one
should manufacture a heterostructure with specific configuration. After that several special areas of the
heterostructure should be doped by diffusion and/or ion implantation and optimization of annealing of dopant and/or radiation defects. We analyzed redistribution of dopant with account redistribution of radiation
defects to formulate recommendations to decrease dimensions of integrated circuits by using analytical
approaches of modeling of technological process.
ON ANALYTICAL APPROACH FOR ANALYSIS OF DISSOLUTION OF A MEDICINAL PRODUCT IN ...pbij
In this paper we introduce a model of dissolution of a medicinal product in a organism with account of
changing of conditions. The model gives a possibility to estimate spatio-temporal distribution of
concentration of a medicinal product during dissolution. We also consider an analytical approach to
analyze the above dissolution. We consider a possibility to accelerate and decelerate of the above
dissolution.
Optimization of Manufacturing of Circuits XOR to Decrease Their Dimensionsijrap
We analyzed possibility to increase density of elements of integrated circuits. We illustrate the possibility
by example of manufacturing of a circuit XOR. Framework the paper we consider a heterostructure which
includes into itself a substrate and an epitaxial layer with specific configuration. Several required areas of
the heterostructure have been doped by diffusion and/or ion implantation. After that we consider optimized
annealing of dopant and/or radiation defects.
On Increasing of Density of Elements of Double Boost DC-DC Converter. Influen...csijjournal
In this paper we introduce an approach to increase density of field-effect heterotransistors and heterodiodes in the framework of double boost DC-DC converter. In the framework of the approach we consider manufacturing the inverter in hetero structure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed in the framework of the optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
On Analytical Approach to Prognosis of Manufacturing of Voltage Divider Biasi...BRNSS Publication Hub
In this paper, we introduce an approach for prognosis of manufacturing of voltage divider biasing common emitter amplifier based on bipolar transistors with account mismatch-induced stress. Based on this prognosis, we formulate some recommendations for optimization of manufacturing of the amplifier. Main aims of the optimization are as follows: (1) Decreasing dimensions of elements of the considered operational amplifier and (2) increasing of performance and reliability of the considered bipolar transistors. Dimensions of considered bipolar transistors will be decreased due to manufacture of these transistors framework heterostructure with specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects. Performance and reliability of the above bipolar transistors could be increased by optimization of annealing of dopant and/or radiation defects and using inhomogeneity of the properties of heterostructure. Choosing of inhomogeneity properties of heterostructure leads to increasing of compactness of distribution of concentration of dopant. At the same time, one can obtain increasing of homogeneity of the above concentration. In this paper, we also introduce an analytical approach for prognosis of technological process of manufacturing of the considered operational amplifier. The approach gives a possibility to take into account variation of parameters of processes in space and at the same time in space. At the same time, one can take into account nonlinearity of the considered processes.
On optimization ofON OPTIMIZATION OF DOPING OF A HETEROSTRUCTURE DURING MANUF...ijcsitcejournal
We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δ-
doped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After
the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize
annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more
compact p-i-n-heterodiodes
Optimization of Technological Process to Decrease Dimensions of Circuits XOR,...ijfcstjournal
The paper describes an approach of increasing of integration rate of elements of integrated circuits. The
approach has been illustrated by example of manufacturing of a circuit XOR. Framework the approach one
should manufacture a heterostructure with specific configuration. After that several special areas of the
heterostructure should be doped by diffusion and/or ion implantation and optimization of annealing of dopant and/or radiation defects. We analyzed redistribution of dopant with account redistribution of radiation
defects to formulate recommendations to decrease dimensions of integrated circuits by using analytical
approaches of modeling of technological process.
ON APPROACH TO INCREASE DENSITY OF FIELD- EFFECT TRANSISTORS IN AN INVERTER C...antjjournal
In this paper we consider an approach to decrease dimensions of field-effect transistors framework invertors with increasing of their density. Framework the approach it is necessary to manufacture a
heterostructure, which consist of two layers. One of them includes into itself several sections. After manufacturing of the heterostructure these sections should be doped by diffusion or by ion implantation with future optimized annealing of dopant and/or radiation defects. To prognosis the technological process we consider an analytical approach, which gives a possibility to take into account variation of physical parameters in space and time. At the same time the approach gives a possibility to take into
account nonlinearity of mass and heat transport and to analyze the above transport without crosslinking solutions on interfaces between materials of heterostructure.
International Journal of Mathematics and Statistics Invention (IJMSI) is an international journal intended for professionals and researchers in all fields of computer science and electronics. IJMSI publishes research articles and reviews within the whole field Mathematics and Statistics, new teaching methods, assessment, validation and the impact of new technologies and it will continue to provide information on the latest trends and developments in this ever-expanding subject. The publications of papers are selected through double peer reviewed to ensure originality, relevance, and readability. The articles published in our journal can be accessed online.
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In this paper we introduce an approach to increase integration rate of field-effect heterotransistors in the
framework of band-pass filter. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
On Approach to Increase Integration Rate of Elements of a Current Source CircuitBRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a current source circuit.
Framework the approach, we consider a heterostructure with special configuration. Several specific
areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/
or radiation defects should be optimized.
On Approach to Increase Integration rate of Elements of a Circuit Driver with...BRNSS Publication Hub
In this paper, we introduce an approach to increase the integration rate of elements of a driver with 2-tap de-emphasis and impendence matching. Framework the approach, we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
The peer-reviewed International Journal of Engineering Inventions (IJEI) is started with a mission to encourage contribution to research in Science and Technology. Encourage and motivate researchers in challenging areas of Sciences and Technology.
Optimization of Dopant Diffusion and Ion Implantation to Increase Integration...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach based on manufacturing field-effect transistors in heterostructures and optimization of technological processes. At the same time we consider possibility to simplify their constructions.
OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach based on manufacturing field-effect transistors in heterostructures and optimization of technological processes. At the same time we consider possibility to simplify their constructions.
OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach
based on manufacturing field-effect transistors in heterostructures and optimization of technological
processes. At the same time we consider possibility to simplify their constructions.
OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach based on manufacturing field-effect transistors in heterostructures and optimization of technological processes. At the same time we consider possibility to simplify their constructions.
On Decreasing of Dimensions of Field-Effect Heterotransistors in Logical CMOP...BRNSS Publication Hub
In this paper, we introduce an approach to decrease the dimensions of CMOP voltage differencing inverting buffered amplifier based on field-effect heterotransistors by increasing density of elements. Dimensions of the elements will be decreased due to manufacture heterostructure with a specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects.
Global Chaos Synchronization of Hyperchaotic Pang and Hyperchaotic Wang Syste...CSEIJJournal
This paper investigates the global chaos synchronization of identical hyperchaotic Wang systems, identical
hyperchaotic Pang systems, and non-identical hyperchaotic Wang and hyperchaotic Pang systems via
adaptive control method. Hyperchaotic Pang system (Pang and Liu, 2011) and hyperchaotic Wang system
(Wang and Liu, 2006) are recently discovered hyperchaotic systems. Adaptive control method is deployed
in this paper for the general case when the system parameters are unknown. Sufficient conditions for global
chaos synchronization of identical hyperchaotic Pang systems, identical hyperchaotic Wang systems and
non-identical hyperchaotic Pang and Wang systems are derived via adaptive control theory and Lyapunov
stability theory. Since the Lyapunov exponents are not required for these calculations, the adaptive control
method is very convenient for the global chaos synchronization of the hyperchaotic systems discussed in
this paper. Numerical simulations are presented to validate and demonstrate the effectiveness of the
proposed synchronization schemes.
On prognozisys of manufacturing doublebaseijaceeejournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account
nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this
heterostructure by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects.
The approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher
compactness of the considered bipolar transistor.
On Approach to Increase Integration Rate of Elements of an Operational Amplif...BRNSS Publication Hub
In this paper, we introduce an approach to optimize manufacturing of an operational amplifier circuit based on field-effect transistors. Main aims of the optimization are (i) decreasing dimensions of elements of the considered operational amplifier and (ii) increasing of performance and reliability of the considered field-effect transistors. Dimensions of considered field-effect transistors will be decreased due to manufacture of these transistors framework heterostructure with specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects. Performance and reliability of the above field-effect transistors could be increased by optimization of annealing of dopant and/or radiation defects and using inhomogeneity of properties of heterostructure. Choosing of inhomogeneity of properties of heterostructure leads to increasing of compactness of distribution of concentration of dopant. At the same time, one can obtain increasing of homogeneity of the above concentration. In this paper, we also introduce an analytical approach for prognosis of technological process of manufacturing of the considered operational amplifier. The approach gives a possibility to take into account variation of parameters of processes in space and at the same time in space. At the same time, one can take into account nonlinearity of the considered processes.
International Journal of Mathematics and Statistics Invention (IJMSI) is an international journal intended for professionals and researchers in all fields of computer science and electronics. IJMSI publishes research articles and reviews within the whole field Mathematics and Statistics, new teaching methods, assessment, validation and the impact of new technologies and it will continue to provide information on the latest trends and developments in this ever-expanding subject. The publications of papers are selected through double peer reviewed to ensure originality, relevance, and readability. The articles published in our journal can be accessed online.
ON APPROACH TO INCREASE DENSITY OF FIELD- EFFECT TRANSISTORS IN AN INVERTER C...antjjournal
In this paper we consider an approach to decrease dimensions of field-effect transistors framework invertors with increasing of their density. Framework the approach it is necessary to manufacture a
heterostructure, which consist of two layers. One of them includes into itself several sections. After manufacturing of the heterostructure these sections should be doped by diffusion or by ion implantation with future optimized annealing of dopant and/or radiation defects. To prognosis the technological process we consider an analytical approach, which gives a possibility to take into account variation of physical parameters in space and time. At the same time the approach gives a possibility to take into
account nonlinearity of mass and heat transport and to analyze the above transport without crosslinking solutions on interfaces between materials of heterostructure.
International Journal of Mathematics and Statistics Invention (IJMSI) is an international journal intended for professionals and researchers in all fields of computer science and electronics. IJMSI publishes research articles and reviews within the whole field Mathematics and Statistics, new teaching methods, assessment, validation and the impact of new technologies and it will continue to provide information on the latest trends and developments in this ever-expanding subject. The publications of papers are selected through double peer reviewed to ensure originality, relevance, and readability. The articles published in our journal can be accessed online.
ON MODEL OF MANUFACTURING OF A BAND-PASS FILTER TO INCREASE INTEGRATION RATE ...antjjournal
In this paper we introduce an approach to increase integration rate of field-effect heterotransistors in the
framework of band-pass filter. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
On Approach to Increase Integration Rate of Elements of a Current Source CircuitBRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a current source circuit.
Framework the approach, we consider a heterostructure with special configuration. Several specific
areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/
or radiation defects should be optimized.
On Approach to Increase Integration rate of Elements of a Circuit Driver with...BRNSS Publication Hub
In this paper, we introduce an approach to increase the integration rate of elements of a driver with 2-tap de-emphasis and impendence matching. Framework the approach, we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
The peer-reviewed International Journal of Engineering Inventions (IJEI) is started with a mission to encourage contribution to research in Science and Technology. Encourage and motivate researchers in challenging areas of Sciences and Technology.
Optimization of Dopant Diffusion and Ion Implantation to Increase Integration...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach based on manufacturing field-effect transistors in heterostructures and optimization of technological processes. At the same time we consider possibility to simplify their constructions.
OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach based on manufacturing field-effect transistors in heterostructures and optimization of technological processes. At the same time we consider possibility to simplify their constructions.
OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach
based on manufacturing field-effect transistors in heterostructures and optimization of technological
processes. At the same time we consider possibility to simplify their constructions.
OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach based on manufacturing field-effect transistors in heterostructures and optimization of technological processes. At the same time we consider possibility to simplify their constructions.
On Decreasing of Dimensions of Field-Effect Heterotransistors in Logical CMOP...BRNSS Publication Hub
In this paper, we introduce an approach to decrease the dimensions of CMOP voltage differencing inverting buffered amplifier based on field-effect heterotransistors by increasing density of elements. Dimensions of the elements will be decreased due to manufacture heterostructure with a specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects.
Global Chaos Synchronization of Hyperchaotic Pang and Hyperchaotic Wang Syste...CSEIJJournal
This paper investigates the global chaos synchronization of identical hyperchaotic Wang systems, identical
hyperchaotic Pang systems, and non-identical hyperchaotic Wang and hyperchaotic Pang systems via
adaptive control method. Hyperchaotic Pang system (Pang and Liu, 2011) and hyperchaotic Wang system
(Wang and Liu, 2006) are recently discovered hyperchaotic systems. Adaptive control method is deployed
in this paper for the general case when the system parameters are unknown. Sufficient conditions for global
chaos synchronization of identical hyperchaotic Pang systems, identical hyperchaotic Wang systems and
non-identical hyperchaotic Pang and Wang systems are derived via adaptive control theory and Lyapunov
stability theory. Since the Lyapunov exponents are not required for these calculations, the adaptive control
method is very convenient for the global chaos synchronization of the hyperchaotic systems discussed in
this paper. Numerical simulations are presented to validate and demonstrate the effectiveness of the
proposed synchronization schemes.
On prognozisys of manufacturing doublebaseijaceeejournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account
nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this
heterostructure by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects.
The approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher
compactness of the considered bipolar transistor.
On Approach to Increase Integration Rate of Elements of an Operational Amplif...BRNSS Publication Hub
In this paper, we introduce an approach to optimize manufacturing of an operational amplifier circuit based on field-effect transistors. Main aims of the optimization are (i) decreasing dimensions of elements of the considered operational amplifier and (ii) increasing of performance and reliability of the considered field-effect transistors. Dimensions of considered field-effect transistors will be decreased due to manufacture of these transistors framework heterostructure with specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects. Performance and reliability of the above field-effect transistors could be increased by optimization of annealing of dopant and/or radiation defects and using inhomogeneity of properties of heterostructure. Choosing of inhomogeneity of properties of heterostructure leads to increasing of compactness of distribution of concentration of dopant. At the same time, one can obtain increasing of homogeneity of the above concentration. In this paper, we also introduce an analytical approach for prognosis of technological process of manufacturing of the considered operational amplifier. The approach gives a possibility to take into account variation of parameters of processes in space and at the same time in space. At the same time, one can take into account nonlinearity of the considered processes.
International Journal of Mathematics and Statistics Invention (IJMSI) is an international journal intended for professionals and researchers in all fields of computer science and electronics. IJMSI publishes research articles and reviews within the whole field Mathematics and Statistics, new teaching methods, assessment, validation and the impact of new technologies and it will continue to provide information on the latest trends and developments in this ever-expanding subject. The publications of papers are selected through double peer reviewed to ensure originality, relevance, and readability. The articles published in our journal can be accessed online.
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AJMS_467_23.pdf
1. www.ajms.com
RESEARCH ARTICLE
On model of transport of a medicinal product in an organism
*E.L. Pankratov
Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russia
Corresponding Email: elp2004@mail.ru
Received: 25-02-2023; Revised: 20-03-2023; Accepted: 22-04-2023
ABSTRACT
In this paper we introduce a model of transport of a medicinal product in a organism. The model based on
estimation of spatio-temporal distribution of concentration of product. We introduce an analytical
approach for analysis of the considered transport with account of changing of conditions. We consider a
possibility to accelerate and decelerate of transport of the above medicinal product.
Keywords: transport of a medicinal product; spatio-temporal distribution of concentration of a medicinal
product; changing of speed of transport of a medicinal product; analytical approach for analysis
INTRODUCTION
In the present time one can find fast increasing of quantity of new medicinal products as well as intensive
development of old medicinal products with questionable efficacy and safety [1-5]. Usually influence of
medicinal products on organism could be done experimentally. Some time required dose of the
considered products with influence on organism could be estimated. At presents several models to
analyze transport of medicinal products through organism already were elaborated. In this paper we
consider a model for estimation of spatio-temporal distribution of concentration of a medicinal product.
Based on the model we analyzed the above concentration with account possible changing of properties of
organism.
Method of solution
In this section we consider a model for estimation and analysis of spatio-temporal distribution of
concentration of a medicinal product in an organism with account possible changing of properties. We
calculate the required distribution as solution of the second Fick's law in the following form
t
x
N
t
x
C
t
x
K
x
t
x
C
t
x
D
x
t
t
x
C
,
,
,
,
,
,
, (1)
where C (x,t) is the spatio-temporal distribution of concentration of the considered medicinal product; D
(x,t) is the diffusion coefficient of the product, which depends on tissue conditions in organism; K (x,t) is
the parameter of interaction of the considered product with another substances in organism; N (x,t) is the
concentration of other substances in organism, which interacting with infused product. Initial distribution
2. 50
AJMS/Apr-Jun 2023/Volume 7/Issue 2
of concentration of the considered medicinal product depends on type of infusion (single or continuous
infusion). and could be written in the following form
C (x,0)=fC (x). (2)
Boundary values of concentration of the considered medicinal product also depends on type of infusion
for single infusion of product :
0
,
0
x
x
t
x
C
, C (L,t) = 0; (3a)
for continuous infusion of product : C (0,t) = C0, C (L,t) = 0, (3b)
where C0 is the concentration of product in place of infusion. Next let us to solve the Eq. (1) with
conditions (2) and (3) by method of averaging of function corrections [6-8]. First of all we transform
Eq.(1) to the following integral form (for single or continuous infusion, respectively)
t x
t x
d
v
d
v
v
D
v
C
v
x
d
v
d
v
C
v
D
L
t
x
C
t
x
C
0 0
0 0
2
,
,
,
,
1
,
,
t L
L
t x
d
v
d
v
C
v
D
v
d
t
v
C
v
L
d
v
d
v
N
v
C
v
K
v
x
0 0
0
0 0
,
,
,
,
,
,
x
t L
x
v
d
t
v
C
v
x
d
v
d
v
v
D
v
C
v
L
v
d
v
f
v
x
0
0 0
0
,
,
,
, (4a)
t x
t x
d
v
d
v
N
v
C
v
K
v
x
d
v
d
v
v
D
v
C
L
t
x
C
t
x
C
0 0
0 0
2
,
,
,
,
,
1
,
,
t L
t
t
x
d
v
d
v
v
D
v
C
L
x
d
x
D
C
d
x
C
x
D
v
d
v
f
v
x
0 0
0
0
0
0
,
,
,
,
,
L
L
t L
v
d
t
v
C
v
L
v
d
v
f
v
L
d
v
d
v
N
v
C
v
K
v
L
0
0
0 0
,
,
,
,
x
v
d
t
v
C
v
x
0
,
. (4b)
In the framework of the considered method we substitute not yet known average value of the required
concentration 1 instead of the above concentration in the right sides of Eqs. (4). The substitution gives a
possibility to obtain equations to calculate the first-order approximations of concentration of the
considered product in the following form (for single or continuous infusion, respectively)
3. 51
AJMS/Apr-Jun 2023/Volume 7/Issue 2
2
,
,
1
,
2
2
1
0 0
1
0
2
1
1
x
L
d
v
d
v
N
v
K
v
x
v
d
v
f
v
x
L
t
x
C
t x
x
, (5a)
t x
t
d
v
d
v
N
v
K
v
x
d
D
x
D
L
t
x
C
0 0
1
0
1
2
1
1 ,
,
,
0
,
1
,
t
t
t
x
d
D
L
D
d
x
D
C
d
x
D
v
d
v
f
v
x
0
1
0
0
0
1
0
,
0
,
,
,
2
,
, 1
0
0 0
1
x
x
L
L
x
v
d
v
f
v
L
d
v
d
v
N
v
K
v
L
L
t L
. (5b)
Average value of concentration of medical product 1 could be obtain by the following standard relation
[6-8]
0 0
1
1 ,
1 L
t
d
x
d
t
x
C
L
. (6)
Substitution of relations (5) into relation (6) gives a possibility to obtain relations to determine average
value 1 in the final form (for single or continuous infusion, respectively)
3
0 0
2
2
0
2
2
1
3
2
,
, L
t
d
x
d
t
x
N
t
x
K
x
L
t
x
d
x
f
x
L
L
L
1
0 0
,
,
2
L
t
d
x
d
t
x
N
t
x
K
x
L
x
t , (7a)
0 0
0
0
0 0
1 ,
2
2
L
L
L x
t
d
x
d
t
x
D
t
C
x
d
x
f
x
L
L
x
d
v
d
v
f
v
x
12
5
,
,
, 3
0 0
0 0
2
2
L
t
d
x
d
t
x
D
t
t
d
x
d
t
x
N
t
x
K
x
L
t
L
L
0 0
0 0
,
,
2
,
,
L
L
t
d
x
d
t
x
N
t
x
K
x
L
t
L
t
d
x
d
t
x
N
t
x
K
x
L
x
t
0 0
,
L
t
d
x
d
t
x
D
t . (7b)
The second-order approximation of the considered concentration in the framework of the method of
averaging of function corrections could be determined by using the following standard procedure:
replacement of the considered concentration in the right sides of Eqs. (4) on the sum C (x,t) 2+C1 (x,t)
[6-8]. The replacement gives a possibility to obtain the following equations to determine the
concentration of the considered medicinal product (for single or continuous infusion, respectively)
t x
t x
v
C
v
x
d
v
d
v
C
v
D
L
t
x
C
t
x
C
0 0
1
2
0 0
1
2
2
1
2
2 ,
,
,
1
,
,
t x
x
d
v
d
v
N
v
C
v
K
v
x
v
d
v
f
v
x
d
v
d
v
v
D
0 0
1
2
0
,
,
,
,
x
t L
L
t
v
C
d
v
d
v
v
D
v
C
v
L
v
d
t
v
C
v
L
0
1
2
0 0
1
2
0
1
2 ,
,
,
,
t L
d
v
d
v
C
v
D
v
d
v
x
0 0
1
2 ,
,
, (8a)
4. 52
AJMS/Apr-Jun 2023/Volume 7/Issue 2
x
t x
v
d
v
f
v
x
d
v
d
v
v
D
v
C
L
t
x
C
t
x
C
0
0 0
1
2
2
1
2
2
,
,
1
,
,
t
t x
d
x
C
x
D
d
v
d
v
N
v
C
v
K
v
x
0
1
2
0 0
1
2 ,
,
,
,
,
t L
x
t
d
v
d
v
v
D
v
C
L
x
v
d
t
v
C
v
x
d
x
D
C
0 0
1
2
0
1
2
0
0
,
,
,
,
L
L
t L
v
L
v
d
v
f
v
L
d
v
d
v
N
v
C
v
K
v
L
0
0
0 0
1
2 ,
,
,
v
d
t
v
C ,
1
2
. (8b)
Average value of the second-order approximation of the above concentration 2 could be calculated by
using the following standard relation [6-8]
0 0
1
2
2 ,
,
1 L
t
d
x
d
t
x
C
t
x
C
L
. (9)
Substitution of relations (8) into relation (9) gives a possibility to obtain the following relations for the
required average value 2 (for single or continuous infusion, respectively)
0 0
1
0 0
1
2
2
,
,
,
,
2
1 L
L
t
d
x
d
t
x
C
t
x
D
v
x
t
t
d
x
d
x
t
x
D
t
x
C
x
L
t
0 0
1
2
0 0
1
2
,
,
,
2
1
,
,
2
L
L
t
d
x
d
t
x
N
t
x
C
t
x
K
x
L
t
t
d
x
d
x
t
x
D
t
x
C
x
t
0 0
1
2
2
0 0
1
2 ,
,
2
1
,
,
,
2
L
L
t
d
x
d
x
t
x
D
t
x
C
x
L
t
t
d
x
d
t
x
N
t
x
C
t
x
K
x
t
0 0
1
0 0
1
0 0
,
,
,
L
L
L
x
d
t
x
C
t
x
D
x
L
L
t
d
x
d
t
x
C
x
L
L
t
d
x
d
x
f
x
L
x
0 0
1
2
0 0
1
2
2
,
,
2
,
,
2
1 L
L
x
d
t
x
D
t
x
C
x
t
d
x
d
t
x
C
t
x
D
x
L
t
t
d
t
0 0
2
0 0
,
2
1
,
L
L
t
d
x
d
x
t
x
D
x
L
t
t
d
x
d
t
x
D
v
x
t
t
d
t
0 0
2
0 0
2
,
,
2
,
,
2
1 L
L
t
d
x
d
t
x
N
t
x
K
x
t
t
d
x
d
t
x
N
t
x
K
x
L
t
1
0 0
2
3
2 ,
2
4
L
t
d
x
d
x
t
x
D
x
t
L
, (10a)
0 0
1
2
0 0
1
2
2
,
,
,
,
,
2
1 L
L
t
x
C
t
x
K
x
t
t
d
x
d
t
x
N
t
x
C
t
x
K
x
L
t
L
L
x
d
x
f
x
L
t
d
x
d
x
t
x
D
t
x
C
x
L
t
t
d
x
d
t
x
N
0
2
0 0
1
2
,
,
,
0 0
1
0 0
0
0
2
,
,
,
L
L
L
t
d
x
d
t
x
C
t
x
D
t
t
d
x
d
t
x
D
t
C
x
d
x
f
x
5. 53
AJMS/Apr-Jun 2023/Volume 7/Issue 2
0 0
2
2
0 0
1
0 0
1
2
2
1
,
,
,
2
,
2
L
L
L
x
L
t
d
x
d
t
x
N
t
x
C
t
x
K
x
L
t
L
t
d
x
d
t
x
C
x
0 0
1
0 0
1
0
1 ,
2
,
,
L
L
L
t
x
C
t
L
t
d
x
d
t
x
C
x
L
x
v
d
v
f
v
L
t
d
x
d
t
x
C
0 0
2
0 0
,
,
2
1
,
, L
L
t
d
x
d
t
x
N
t
x
K
x
L
t
t
d
x
d
t
x
D
t
t
d
x
d
x
t
x
D
0 0
0 0
2
3
,
,
2
,
,
3
L
L
t
d
x
d
t
x
N
t
x
K
x
L
t
L
t
d
x
d
t
x
N
t
x
K
x
t
L
1
0 0
,
L
t
d
x
d
t
x
D
t . (10b)
Spatio-temporal distribution of concentration of medicinal product was analyzed analytically by using the
second-order approximation in the framework of method of averaging of function corrections. The
approximation is usually enough good approximation for to make qualitative analysis and to obtain some
quantitative results. All obtained results have been checked by comparison with results of numerical
simulations.
DISCUSSION
In this section we present an analysis of spatio-temporal distribution of concentration of medicinal
product in organism. Figs. 1 and 2 shows typical dependences of the considered concentration on time.
Figs. 3 and 4 shows typical dependences of the considered concentration on coordinate. The obtained
dependences qualitatively coincides with analogous experimental distributions. Increasing of temperature
of organism leads to acceleration of interaction of the considered medicinal product with other substances
of the organism.
Fig 1: Typical dependences of concentration of considered product on time at a single infusion of
medicinal product
0.0 2.5 5.0 7.5 10.0
t
0.00
0.25
0.50
0.75
1.00
C
(x,t)
6. 54
AJMS/Apr-Jun 2023/Volume 7/Issue 2
Fig 2: Typical dependences of concentration of considered product on time at continuous infusion of
medicinal product
Fig 3: Typical dependences of concentration of considered product on coordinate at a single infusion of
medicinal product
Fig. 4: Typical dependences of concentration of considered product on coordinate at continuous infusion
of medicinal product
0.0 2.5 5.0 7.5 10.0
t
0.00
0.25
0.50
0.75
1.00
C
(x,t)
0.0 1.0 2.0 3.0 4.0 5.0
x
0.00
0.25
0.50
0.75
1.00
C
(x,t)
0.0 2.5 5.0 7.5 10.0
x
0.00
0.25
0.50
0.75
1.00
C
(x,t)
7. 55
AJMS/Apr-Jun 2023/Volume 7/Issue 2
CONCLUSION
In this paper we consider analysis of transport of a medicinal product in an organisms. The analysis based
on estimation of spatio-temporal distribution of concentration of the above product. We introduce an
analytical approach for analysis of the above transport with account changing of it's conditions. We
consider possibility to accelerate and decelerate transport of medicinal product in organisms.
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