The LM380 is a power audio amplifier for consumer application. In order to hold system cost to a minimum, gain is internally fixed at 34 dB. A unique input stage allows inputs to be ground referenced. The output is automatically self centering to one half the supply voltage.
The LM380 is a power audio amplifier for consumer application. In order to hold system cost to a minimum, gain is internally fixed at 34 dB. A unique input stage allows inputs to be ground referenced. The output is automatically self centering to one half the supply voltage.
The LM124/SA534/LM2902 series consists of four independent, high-gain, internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages.
The LM124/SA534/LM2902 series consists of four independent, high-gain, internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages.
Part of Lecture series on EE321N, Power Electronics-I delivered by me during Fifth Semester of B.Tech. Electrical Engg., 2012
Z H College of Engg. & Technology, Aligarh Muslim University, Aligarh
Please comment and feel free to ask anything related. Thanks!
P700 Solid State Power Controller (SSPC) is a fully rated 150 Amperes device available for use in today\’s and tomorrow\’s Power Systems. Features reliable trouble free switching together with real short circuit
protection. Load current is sensed and shutdown initiated within microseconds.
This is a presentation by Dada Robert in a Your Skill Boost masterclass organised by the Excellence Foundation for South Sudan (EFSS) on Saturday, the 25th and Sunday, the 26th of May 2024.
He discussed the concept of quality improvement, emphasizing its applicability to various aspects of life, including personal, project, and program improvements. He defined quality as doing the right thing at the right time in the right way to achieve the best possible results and discussed the concept of the "gap" between what we know and what we do, and how this gap represents the areas we need to improve. He explained the scientific approach to quality improvement, which involves systematic performance analysis, testing and learning, and implementing change ideas. He also highlighted the importance of client focus and a team approach to quality improvement.
Operation “Blue Star” is the only event in the history of Independent India where the state went into war with its own people. Even after about 40 years it is not clear if it was culmination of states anger over people of the region, a political game of power or start of dictatorial chapter in the democratic setup.
The people of Punjab felt alienated from main stream due to denial of their just demands during a long democratic struggle since independence. As it happen all over the word, it led to militant struggle with great loss of lives of military, police and civilian personnel. Killing of Indira Gandhi and massacre of innocent Sikhs in Delhi and other India cities was also associated with this movement.
Ethnobotany and Ethnopharmacology:
Ethnobotany in herbal drug evaluation,
Impact of Ethnobotany in traditional medicine,
New development in herbals,
Bio-prospecting tools for drug discovery,
Role of Ethnopharmacology in drug evaluation,
Reverse Pharmacology.
Read| The latest issue of The Challenger is here! We are thrilled to announce that our school paper has qualified for the NATIONAL SCHOOLS PRESS CONFERENCE (NSPC) 2024. Thank you for your unwavering support and trust. Dive into the stories that made us stand out!
Students, digital devices and success - Andreas Schleicher - 27 May 2024..pptxEduSkills OECD
Andreas Schleicher presents at the OECD webinar ‘Digital devices in schools: detrimental distraction or secret to success?’ on 27 May 2024. The presentation was based on findings from PISA 2022 results and the webinar helped launch the PISA in Focus ‘Managing screen time: How to protect and equip students against distraction’ https://www.oecd-ilibrary.org/education/managing-screen-time_7c225af4-en and the OECD Education Policy Perspective ‘Students, digital devices and success’ can be found here - https://oe.cd/il/5yV
Synthetic Fiber Construction in lab .pptxPavel ( NSTU)
Synthetic fiber production is a fascinating and complex field that blends chemistry, engineering, and environmental science. By understanding these aspects, students can gain a comprehensive view of synthetic fiber production, its impact on society and the environment, and the potential for future innovations. Synthetic fibers play a crucial role in modern society, impacting various aspects of daily life, industry, and the environment. ynthetic fibers are integral to modern life, offering a range of benefits from cost-effectiveness and versatility to innovative applications and performance characteristics. While they pose environmental challenges, ongoing research and development aim to create more sustainable and eco-friendly alternatives. Understanding the importance of synthetic fibers helps in appreciating their role in the economy, industry, and daily life, while also emphasizing the need for sustainable practices and innovation.
Home assignment II on Spectroscopy 2024 Answers.pdf
2 n2222
1. DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2222; 2N2222A
NPN switching transistors
Product specification 1997 May 29
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
2. Philips Semiconductors Product specification
NPN switching transistors 2N2222; 2N2222A
FEATURES PINNING
• High current (max. 800 mA) PIN DESCRIPTION
• Low voltage (max. 40 V). 1 emitter
2 base
APPLICATIONS 3 collector, connected to case
• Linear amplification and switching.
DESCRIPTION handbook, halfpage
1 3
2
NPN switching transistor in a TO-18 metal package.
PNP complement: 2N2907A. 2
3 MAM264
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
2N2222 − 60 V
2N2222A − 75 V
VCEO collector-emitter voltage open base
2N2222 − 30 V
2N2222A − 40 V
IC collector current (DC) − 800 mA
Ptot total power dissipation Tamb ≤ 25 °C − 500 mW
hFE DC current gain IC = 10 mA; VCE = 10 V 75 −
fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz
2N2222 250 − MHz
2N2222A 300 − MHz
toff turn-off time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − 250 ns
1997 May 29 2
3. Philips Semiconductors Product specification
NPN switching transistors 2N2222; 2N2222A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
2N2222 − 60 V
2N2222A − 75 V
VCEO collector-emitter voltage open base
2N2222 − 30 V
2N2222A − 40 V
VEBO emitter-base voltage open collector
2N2222 − 5 V
2N2222A − 6 V
IC collector current (DC) − 800 mA
ICM peak collector current − 800 mA
IBM peak base current − 200 mA
Ptot total power dissipation Tamb ≤ 25 °C − 500 mW
Tcase ≤ 25 °C − 1.2 W
Tstg storage temperature −65 +150 °C
Tj junction temperature − 200 °C
Tamb operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air 350 K/W
Rth j-c thermal resistance from junction to case 146 K/W
1997 May 29 3
4. Philips Semiconductors Product specification
NPN switching transistors 2N2222; 2N2222A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current
2N2222 IE = 0; VCB = 50 V − 10 nA
IE = 0; VCB = 50 V; Tamb = 150 °C − 10 µA
ICBO collector cut-off current
2N2222A IE = 0; VCB = 60 V − 10 nA
IE = 0; VCB = 60 V; Tamb = 150 °C − 10 µA
IEBO emitter cut-off current IC = 0; VEB = 3 V − 10 nA
hFE DC current gain IC = 0.1 mA; VCE = 10 V 35 −
IC = 1 mA; VCE = 10 V 50 −
IC = 10 mA; VCE = 10 V 75 −
IC = 150 mA; VCE = 1 V; note 1 50 −
IC = 150 mA; VCE = 10 V; note 1 100 300
hFE DC current gain IC = 10 mA; VCE = 10 V; Tamb = −55 °C
2N2222A 35 −
hFE DC current gain IC = 500 mA; VCE = 10 V; note 1
2N2222 30 −
2N2222A 40 −
VCEsat collector-emitter saturation voltage
2N2222 IC = 150 mA; IB = 15 mA; note 1 − 400 mV
IC = 500 mA; IB = 50 mA; note 1 − 1.6 V
VCEsat collector-emitter saturation voltage
2N2222A IC = 150 mA; IB = 15 mA; note 1 − 300 mV
IC = 500 mA; IB = 50 mA; note 1 − 1 V
VBEsat base-emitter saturation voltage
2N2222 IC = 150 mA; IB = 15 mA; note 1 − 1.3 V
IC = 500 mA; IB = 50 mA; note 1 − 2.6 V
VBEsat base-emitter saturation voltage
2N2222A IC = 150 mA; IB = 15 mA; note 1 0.6 1.2 V
IC = 500 mA; IB = 50 mA; note 1 − 2 V
Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 8 pF
Ce emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz
2N2222A − 25 pF
fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz
2N2222 250 − MHz
2N2222A 300 − MHz
F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
2N2222A f = 1 kHz; B = 200 Hz − 4 dB
1997 May 29 4
5. Philips Semiconductors Product specification
NPN switching transistors 2N2222; 2N2222A
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Switching times (between 10% and 90% levels); see Fig.2
ton turn-on time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − 35 ns
td delay time − 10 ns
tr rise time − 25 ns
toff turn-off time − 250 ns
ts storage time − 200 ns
tf fall time − 60 ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
ndbook, full pagewidth VBB VCC
RB RC
(probe) Vo (probe)
oscilloscope oscilloscope
450 Ω 450 Ω
R2
Vi DUT
R1
MLB826
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
1997 May 29 5
6. Philips Semiconductors Product specification
NPN switching transistors 2N2222; 2N2222A
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads SOT18/13
j α seating plane
B w M A M B M
1
b
k
D1
2
3
a
A D A L
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT A a b D D1 j k L w α
5.31 0.47 5.45 4.70 1.03 1.1 15.0
mm 2.54 0.40 45°
4.74 0.41 5.30 4.55 0.94 0.9 12.7
OUTLINE REFERENCES EUROPEAN
ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION
SOT18/13 B11/C7 type 3 TO-18 97-04-18
1997 May 29 6
7. Philips Semiconductors Product specification
NPN switching transistors 2N2222; 2N2222A
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 May 29 7