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SILICON PHOTOTRANSISTOR CHIPS
                                     DEVICE NO : MC-0105

1.   Application :
      This specification applies to NPN silicon phototransistor chips, Device No.            MC-0105

2.   Structure :
      2-1. Planar type .
      2-2. Electrodes : N ( Emitter ) side: Aluminum alloy.
                          P ( Base ) side: Aluminum alloy.
                          N ( Collector ) side: Gold alloy.
3.   Dimensions :
      3-1. Chip size: 18.1 mils x 18.1 mils ( 0.460 mm x 0.460 mm ).
      3-2. Chip thickness : 7.5 ± 1.0 mils ( 0.190 ± 0.025 mm ).
      3-3. Active area : 12.7 mils x 12.7 mils ( 0.323 x 0.323 mm ).
      3-4. Pattern drawing : Refer to the attached drawing.


                                                  ℃
4.   Electrical Characteristics (Ta=            25℃)

          Parameter          Symbol        Condition        Min.     Typ.     Max.   Unit

       Collector-Emitter
                             BVCEO                          80                        V
                                           IC=100µA
      Breakdown Voltage
       Emitter-Collector
                             BVECO                           7                        V
                                           IE=10µA
      Breakdown Voltage

      Collect dark Current    ICEO         VCE=20V                             100   nA

                                           IC=2mA
        Collector-Emitter
                             VCE(SAT)                                          0.3    V
       Saturation Voltage                  IB=100uA
                                        IC=1mA、VCE=5V
         Rise/Fall Time       tR / tF                                15/15           µs
                                           RL=1000Ω

          Current gain         hFE                          200
                                        IC=2mA、VCE=5V




5. Pattern Diagram



                                                       Base Electrode
                                                       r=1.2 mils diameter




                                                            Active area
     Emitter
     Electrode
     4.3x4.3 mils




                                                                             MOUCHIAN OPTOELECTRONIC Co.,Ltd.
                                                                                             Tel: 886-3-5647136
                                                                                             Fax:886-3-5647180

                                                                                                       May.2006

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Data Sheet Of Mc 0105

  • 1. SILICON PHOTOTRANSISTOR CHIPS DEVICE NO : MC-0105 1. Application : This specification applies to NPN silicon phototransistor chips, Device No. MC-0105 2. Structure : 2-1. Planar type . 2-2. Electrodes : N ( Emitter ) side: Aluminum alloy. P ( Base ) side: Aluminum alloy. N ( Collector ) side: Gold alloy. 3. Dimensions : 3-1. Chip size: 18.1 mils x 18.1 mils ( 0.460 mm x 0.460 mm ). 3-2. Chip thickness : 7.5 ± 1.0 mils ( 0.190 ± 0.025 mm ). 3-3. Active area : 12.7 mils x 12.7 mils ( 0.323 x 0.323 mm ). 3-4. Pattern drawing : Refer to the attached drawing. ℃ 4. Electrical Characteristics (Ta= 25℃) Parameter Symbol Condition Min. Typ. Max. Unit Collector-Emitter BVCEO 80 V IC=100µA Breakdown Voltage Emitter-Collector BVECO 7 V IE=10µA Breakdown Voltage Collect dark Current ICEO VCE=20V 100 nA IC=2mA Collector-Emitter VCE(SAT) 0.3 V Saturation Voltage IB=100uA IC=1mA、VCE=5V Rise/Fall Time tR / tF 15/15 µs RL=1000Ω Current gain hFE 200 IC=2mA、VCE=5V 5. Pattern Diagram Base Electrode r=1.2 mils diameter Active area Emitter Electrode 4.3x4.3 mils MOUCHIAN OPTOELECTRONIC Co.,Ltd. Tel: 886-3-5647136 Fax:886-3-5647180 May.2006