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CM450DX-24S

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CM450DX-24S

  1. 1. MITSUBISHI IGBT MODULES CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPECM450DX-24S - 6th Generation NX series - Collector current IC .............…............… 450A Collector-emitter voltage VCES ...........… 1 2 0 0 V Maximum junction temperature T jmax ... 1 7 5 °C ●Flat base Type ●Copper base plate (non-plating) ●Tin plating pin terminals ●RoHS Directive compliant Dual (Half-Bridge) ●UL Recognized under UL1557, File E323585APPLICATIONAC Motor Control, Motion/Servo Control, Power supply, etc.OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm TERMINAL SECTION A INTERNAL CONNECTION Es2 G2 (39) (38) Tolerance otherwise specified Division of Dimension Tolerance E2 Tr2 C2E1 (47) (24) 0.5 to 3 ±0.2 over 3 to 6 ±0.3 Di2 C1 C2E1 over 6 to 30 ±0.5 (48) Di1 (23) over 30 to 120 ±0.8 Th over 120 to 400 ±1.2 Tr1 NTC The tolerance of size between t=0.8 terminals is assumed to be ±0.4. TH1 TH2 G1 Es1 Cs1 (1) (2) (15) (16) (22) 1 Feb. 2011
  2. 2. MITSUBISHI IGBT MODULES CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPEABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)INVERTER PART IGBT/FWDi Symbol Item Conditions Rating UnitVCES Collector-emitter voltage G-E short-circuited 1200 VVGES Gate-emitter voltage C-E short-circuited ±20 V (Note.2)IC DC, TC=119 °C 450 Collector current (Note.3) AICRM Pulse, Repetitive 900 (Note.2, 4)Ptot Total power dissipation TC=25 °C 3405 W (Note.1) (Note.2, 4)IE TC=25 °C 450 (Note.1) Emitter current (Note.3) AIERM Pulse, Repetitive 900MODULE Symbol Item Conditions Rating UnitTjmax Maximum junction temperature - 175 (Note.2) °CT C max Maximum case temperature 125Tjop Operating junction temperature - -40 ~ +150 °CTstg Storage temperature - -40 ~ +125Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 VELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)INVERTER PART IGBT/FWDi Limits Symbol Item Conditions Unit Min. Typ. Max.ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1 mAIGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μAVGE(th) Gate-emitter threshold voltage IC=45 mA, VCE=10 V 5.4 6.0 6.6 V (Note.5) T j =25 °C - 1.80 2.25VCEsat IC=450 A , Collector-emitter saturation voltage T j =125 °C - 2.00 - V(Terminal) VGE=15 V T j =150 °C - 2.05 - (Note.5) T j =25 °C - 1.70 2.15VCEsat IC=450 A , Collector-emitter saturation voltage T j =125 °C - 1.90 - V(Chip) VGE=15 V T j =150 °C - 1.95 -Cies Input capacitance - - 45Coes Output capacitance VCE=10 V, G-E short-circuited - - 9.0 nFCres Reverse transfer capacitance - - 0.75QG Gate charge VCC=600 V, IC=450 A, VGE=15 V - 1050 - nCtd(on) Turn-on delay time - - 800 VCC=600 V, IC=450 A, VGE=±15 V,tr Rise time - - 200 nstd(off) Turn-off delay time - - 600 RG=0 Ω, Inductive loadtf Fall time - - 300 (Note.5) T j =25 °C - 1.8 2.25VEC (Note.1) IE=450 A , Emitter-collector voltage T j =125 °C - 1.8 - V(Terminal) G-E short-circuited T j =150 °C - 1.8 - (Note.5) T j =25 °C - 1.7 2.15VEC (Note.1) IE=450 A , Emitter-collector voltage T j =125 °C - 1.7 - V(Chip) G-E short-circuited T j =150 °C - 1.7 - (Note.1)trr Reverse recovery time VCC=600 V, IE=450 A, VGE=±15 V, - - 300 ns (Note.1)Qrr Reverse recovery charge RG=0 Ω, Inductive load - 24 - μCEon Turn-on switching energy per pulse VCC=600 V, IC=IE=450 A, - 54.9 - mJEoff Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, T j =150 °C, - 48.0 - (Note.1)Err Reverse recovery energy per pulse Inductive load - 32.4 - mJ Main terminals-chip, per switch,R CC+EE Internal lead resistance (Note.2) - - 0.7 mΩ TC=25 °Crg Internal gate resistance Per switch - 4.3 - Ω 2 Feb. 2011
  3. 3. MITSUBISHI IGBT MODULES CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPEELECTRICAL CHARACTERISTICS (cont.; T j =25 °C, unless otherwise specified)NTC THERMISTOR PART Limits Symbol Item Conditions Unit Min. Typ. Max. (Note.2)R25 Zero-power resistance TC=25 °C 4.85 5.00 5.15 kΩΔR/R Deviation of resistance TC=100 °C, R100=493 Ω -7.3 - +7.8 % (Note.6)B(25/50) B-constant Approximate by equation - 3375 - K (Note.2)P25 Power dissipation TC=25 °C - - 10 mWTHERMAL RESISTANCE CHARACTERISTICS Limits Symbol Item Conditions Unit Min. Typ. Max.Rth(j-c)Q (Note.2) Junction to case, per Inverter IGBT - - 44 K/kW Thermal resistanceRth(j-c)D Junction to case, per Inverter FWDi - - 78 K/kW (Note. 2) Case to heat sink, per 1 module,Rth(c-s) Contact thermal resistance (Note.7) - 15 - K/kW Thermal grease appliedMECHANICAL CHARACTERISTICS Limits Symbol Item Conditions Unit Min. Typ. Max.Mt Main terminals M 6 screw 3.5 4.0 4.5 Mounting torque N·mMs Mounting to heat sink M 5 screw 2.5 3.0 3.5 Terminal to terminal 11.55 - -ds Creepage distance mm Terminal to base plate 12.32 - - Terminal to terminal 10.00 - -da Clearance mm Terminal to base plate 10.85 - -m Weight - - 350 - g (Note.8)ec Flatness of base plate On the centerline X, Y ±0 - +100 μmNote.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).Note.2: Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. The heat sink thermal resistance should measure just under the chips.Note.3: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating.Note.4: Junction temperature (T j ) should not increase beyond T j m a x rating.Note.5: Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit for VCEsat, VEC. R 1 1Note.6: B ( 25 / 50)  ln( 25 ) /(  ) R 50 T25 T50 R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K] R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).Note.8: The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. -:Concave +:Convex Y X mounting side mounting side -:Concave mounting side +:ConvexNote.9: Japan Electronics and Information Technology Industries Association (JEITA) standards, "EIAJ ED-4701/300: Environmental and endurance test methods for semiconductor devices (Stress test I)"Note.10: Use the following screws when mounting the printed circuit board (PCB) on the stand offs. "M2.6×10 or M2.6×12 self tapping screw" The length of the screw depends on the thickness of the PCB. 3 Feb. 2011
  4. 4. MITSUBISHI IGBT MODULES CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPERECOMMENDED OPERATING CONDITIONS (T a =25 °C) Limits Symbol Item Conditions Unit Min. Typ. Max.VCC (DC) Supply voltage Applied across C1-E2 - 600 850 VVGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 13.5 15.0 16.5 VRG External gate resistance Per switch 0 - 10 ΩCHIP LOCATION (top view) Dimension in mm, tolerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: FWDi, Th: NTC thermistor, Each mark points the center position of each chip. 4 Feb. 2011
  5. 5. MITSUBISHI IGBT MODULES CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPETEST CIRCUIT AND WAVEFORMS 22 22 22 48 22 48 48 48 Short- Short- Short- circuited circuited VGE=15 V circuited 15 IC 15 15 IE 15 16 V 16 V 16 16 V 23/24 V 23/24 23/24 23/24 Short- Short- Short- VGE=15 V circuited circuited circuited 38 IC 38 IE 38 38 39 47 39 47 39 47 39 47 Tr1 Tr2 Di1 Di2 V C E s a t test circuit VEC test circuit iE v GE ~ 90 % iE Q r r =0.5×I r r ×t r r 0V 0 t trr Load -VGE IE + VCC iC 0A t ~ ~ 90 % RG Irr +VGE VCE 0.5×I r r0V VGE iC -VGE 10% 0A tr tf t t d( o n) td(off) Switching characteristics test circuit and waveforms t r r , Q r r test waveform IEM iE vEC ICM iC iC ICM VCC vCE VCC VCC vCE 0A t 0.1×ICM 0.1×VCC 0.1×VCC 0.02×ICM 0 t 0 t 0V t ti ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy FWDi Reverse recovery energyTurn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) 5 Feb. 2011
  6. 6. MITSUBISHI IGBT MODULES CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPEPERFORMANCE CURVESINVERTER PART COLLECTOR-EMITTER SATURATION OUTPUT CHARACTERISTICS VOLTAGE CHARACTERISTICS (TYPICAL) (TYPICAL) T j =25 °C (Chip) VGE=15 V (Chip) 900 3.5 VGE=20 V 13.5 V 800 T j =150 °C 15 V 12 V 3 700 T j =125 °C SATURATION VOLTAGE VCEsat (V) IC (A) 2.5 600 COLLECTOR-EMITTER COLLECTOR CURRENT 11 V 2 500 400 T j =25 °C 1.5 10 V 300 1 200 9 V 0.5 100 0 0 0 2 4 6 8 10 0 100 200 300 400 500 600 700 800 900 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION FREE WHEELING DIODE VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS (TYPICAL) (TYPICAL) T j =25 °C (Chip) G-E short-circuited (Chip) 1000 10 8 IC=900 A SATURATION VOLTAGE VCEsat (V) T j =150 °C IE (A) IC=450 A COLLECTOR-EMITTER 6 IC=180 A EMITTER CURRENT T j =125 °C 100 4 2 T j =25 °C 0 10 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) 6 Feb. 2011
  7. 7. MITSUBISHI IGBT MODULES CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD VCC=600 V, IC=450 A, VGE=±15 V, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C ---------------: T j =150 °C, - - - - -: T j =125 °C 1000 1000 td(on) td(off) td(off) tf tf td(on) tr SWITCHING TIME (ns) SWITCHING TIME (ns) 100 100 tr 10 10 10 100 1000 0.1 1 10 100 COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω) HALF-BRIDGE HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, VCC=600 V, IC/IE=450 A, VGE=±15 V, INDUCTIVE LOAD, PER PULSE INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C ---------------: T j =150 °C, - - - - -: T j =125 °C 100 1000 EoffREVERSE RECOVERY ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) Eon Err SWITCHING ENERGY (mJ) SWITCHING ENERGY (mJ) 100 Eoff 10 Err Eon 10 1 1 10 100 1000 0.1 1 10 100 COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω) EMITTER CURRENT IE (A) 7 Feb. 2011
  8. 8. MITSUBISHI IGBT MODULES CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPE FREE WHEELING DIODE CAPACITANCE CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS (TYPICAL) (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD G-E short-circuited, T j =25 °C ---------------: T j =150 °C, - - - - -: T j =125 °C 100 1000 Cies Irr 10CAPACITANCE (nF) trr t r r (ns), I r r (A) 100 Coes 1 Cres 0.1 10 0.1 1 10 100 10 100 1000 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE GATE CHARGE CHARACTERISTICS CHARACTERISTICS (TYPICAL) (MAXIMUM) VCC=600 V, IC=450 A, T j =25 °C Single pulse, TC=25°C 20 1 Zth(j-c) NORMALIZED TRANSIENT THERMAL IMPEDANCEVGE (V) 15 0.1GATE-EMITTER VOLTAGE 10 0.01 5 0.001 0 0.00001 0.0001 0.001 0.01 0.1 1 10 0 500 1000 1500 R t h ( j - c ) Q =44 K/kW, R t h ( j - c ) D =78 K/kW GATE CHARGE QG (nC) TIME (S) 8 Feb. 2011
  9. 9. MITSUBISHI IGBT MODULES CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPEKeep safety first in your circuit designs!·Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.Notes regarding these materials·These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customers application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.·Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-partys rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.·All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com/Global/index.html).·When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.·Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.·The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials.·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.·Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. 9 Feb. 2011

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