Visit the IXRFDSM607X2 Web Page: https://ixysrf.com/product/ixrfdsm607x2/ The IXRFDSM607X2 is a dual CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The IXRFDSM607X2 can source and sink 7 A of peak current per driver, 15 A when combined, while producing voltage rise and fall times of less than 5 ns and minimum pulse widths of 8 ns. The inputs of the driver are compatible with TTL or CMOS and are fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. The features and wide safety margin in operating voltage and power make the IXRFDSM607X2 unmatched in performance and value. The surface mount IXRFDSM607X2 is packaged in a low-inductance surface mount package incorporating advanced layout techniques to minimize stray lead inductances for optimum switching performance. The input and output pins can be separated or combined for dual or single driver operation. However, both sides are ground referenced together and cannot be operated ground isolated from each other.. Features High Peak Output Current Low Output Impedance Low Quiescent Supply Current Low Propagation Delay High Capacitive Load Drive Capability Wide Operating Voltage Range Single or Dual Driver Operation Capable Advantages Optimized for RF and high speed Easy to mount, no insulators needed High power density RoHS compliant Applications RF MOSFET Driver Class D and E RF Generators Multi-MHz Switch Mode Power Supplies Pulse Transformer Drivers Pulse Laser Diode Drivers Pulse Generators

1. SMPD Series
IXRFDSM607X2
SURFACE MOUNT DUAL DRIVER IC

2. Sales Webinar Welcome
 Introductions
 Steve Krausse
 Gib Bates
 Recorded Webinar
 Can you hear the Audio?
 Can you see the video &
presentation?
 Chat Function
 Questions
 Public
 Private
 sales@ixysrf.com
 +1-970-493-1901
 Webinar Feedback
 How can we improve?
 Rate the webinar!
2

3. What We’ll Cover
 Markets
 Pricing/Availability
 Technical Overview
 Features
 Advantages
 Device Details
 Configuration Details
 Driver and SPICE Model Construction
 Demonstration Board
 Solutions for Common Issues
 Applications
 Q&A
3

4. Markets 4
 RF power generation
 Pulse-to-Pulse high speed switching for diode applications
 Thin film deposition
 Induction heating
 Power conversion

5. Pricing & Availability
 US MSRP $27.66
 Rail Quantity: 30 ea.
 Outside the US
 Taxes
 Tariffs
 Import Duties
 Shipping/Delivery Costs
 Etc.
5
 Availability
 Current: Mid-October 2017
 Normal: Stock to 8-10 Weeks
 Digikey

6. Technical Overview
Speaker: Gib Bates, IXYSRF R&D
6

7. What’s New?
DE packaging SMPD packaging
7
 DE package has wide flat silver plated
lead-frame
 Typically needs lead forming for strain
relief caused by thermal cycling
 MSL 3 1 week limited exposure time
 Beveled drain lead and case for
orientation
 Surface Mount Power Device has tin plated
gull wing lead-frame
 No special lead forming required
 MSL 1 unlimited exposure time
 Missing pin for orientation
 Utilizes same die line-up as our DE
packaging

8. Features
 Dual 7.5A or 15A combined peak sink
/ source current
 Wide operating voltage range
 Low output impedance
 High capacitive load drive capability
 Less than 10ns rise and fall times
 Low minimum pulse width
 High power density
8

9. Advantages 9
 Optimized for RF and high
speed switching
 Gull wing lead-frame incorporates
thermal strain relief
 No lead forming required
 Automated assembly capable
 Isolated substrate, no insulating pads
required
 RoHS compliant

10. Technical Details
 This example SMPD substrate drawing has larger bond pads so that multiple pins can
be grouped together
 The input and output pads are split into two enabling the dual configuration
10
Grouped ground pins
Two groups output pins
Two input pins
Grouped Vcc pins

11. Technical Details
 At the device level, gull wing pins have been grouped together to enhance current
paths
 Grouped pin layout resembles DE package pin layout
11
Grouped ground pins
Grouped output pins
Grouped input pins
Grouped Vcc pins

12. Technical Details
 At the board level, pins are combined by way of the device PCB footprint
12
PCB footprint pads

13. Configuration Details
 At the board level, pins are combined by way of the device footprint for single or
combined operation
13
Combined pads
for single operation
Split pads for dual
operation

14. Driver Construction
 The following slides are a combined overview of both device construction and SPICE
modeling for the driver
 All schematics are drawn using LTSPICE
 Modeled in LTSPICE (Linear Technologies)
 The driver model is available on the IXYSRF web site
14

15. Driver Construction
 The driver output stage utilizes a PMOS and NMOS MOSFET in a half-bridge topology
 Input is a capacitive loaded pre-driver and level shifter with hysteresis
15

16. Driver Model
 The model includes sub circuit directives to adjust output resistance for PMOS and NMOS
depending on driver
 Pre-driver and level shifter A1 uses parameters to set the voltage, input threshold, and input
hysteresis
16

17. Driver Circuit Example
 This top level schematic represents a 7MHz full-bridge resonant generator as an example
 This triangular symbol is how the driver is represented in the top level schematic
 Drivers work in a complementary fashion to drive both ends of a resonant tank
17

18. Driver Model Files
The model is provided in a zip file on the IXYSRF web site and includes the following LTPSPICE files
 READ ME text file that contains instructions on model use
 Device symbol file that provides the icon for top level circuit construction
 Device schematic file which is the driver schematic itself
 Example circuit for operating the driver model in LTSPICE
18

19. Demonstration Board
 Demonstration board provides a ground referenced power switch
19

20. Demonstration Board 20
 Demonstration board part number: SSMPD Demo Board
 Features
 Easy to use
 Used to construct low-side ground referenced switches
 Select from any of our MOSFETs for installation
 Availability- Winter 2017

21. 21Solutions For Common Issues
Bulk and Bypass Capacitance
 Bulk capacitance provides the energy needed to charge the gate during switching
 Typical values are in the micro Farad range
 Not enough energy storage results in voltage sag during switching events

22. 22Solutions For Common Issues
Bulk and Bypass Capacitance
 Bypass capacitance provides the decoupling needed to reduce switching noise and ringing
 Typical values are in the nano Farad range
 Due to self-resonance, values are an order of magnitude apart to provide over-lapping impedance
curves
 Over-lapping impedance curves lowers insertion impedance over a broad band
Ideal response Self resonance response Over-lapping
impedance curves

23. Applications 23
 Class D and E RF generators
 Multi-MHz switch mode power supplies
 Pulsed and resonant transformer drivers
 Pulsed laser diode drivers
 High speed transducer drivers

24. Q&A
24

25. Contacting Us
+1-970-493-1901
sales@ixysrf.com
Visit Us
1609 Oakridge Drive
Suite 100
Fort Collins, CO 80525
USA
25