SPICE MODEL of SCS215KG (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: SCS215KG
MANUFACTURER: ROHM
REAMARK: POFESSIONAL MODEL

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
R1
0.01m
V1
0Vdc
0
R2
1MEG
U1
SCS215KG_P
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
1.0mA
10mA
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.001 0.740 0.735 -0.68
0.01 0.780 0.794 1.79
0.1 0.850 0.857 0.82
1 0.950 0.942 -0.84
2 1.000 0.988 -1.20
5 1.100 1.096 -0.36
10 1.250 1.254 0.32
20 1.550 1.551 0.06
50 2.400 2.400 0.00

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
5
0
V1
TD = 0
TF = 500ns
PW = 100us
PER = 500us
V1 = 0
TR = 100us
V2 = 1200
V2
0Vdc
U1
SCS215KG_PR1
100MEG
V(N16650)
10mV 100mV 1.0V 10V 100V 1.0KV
I(V2)/(1200V/100us)
10p
100p
1.0n
10n
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
6
Comparison Graph
Circuit Simulation result
Comparison table
VR (V)
CT (pF)
%Error
Measurement Simulation
0.01 1100.000 1079.000 -1.91
0.1 1050.000 1045.000 -0.48
1 800.00 794.00 -0.75
10 330.00 325.00 -1.52
20 238.00 232.00 -2.52
50 155.00 151.00 -2.58
100 110.00 114.00 3.64
200 87.00 90.30 3.79
500 69.00 71.20 3.19
1000 63.00 62.75 -0.40

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
7
V1
0Vdc
R1
100m
0
R2
100MEG
U1
SCS215KG_P
V_V1
0V 0.50KV 1.00KV 1.24KV
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
100uA
1.0mA
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
8
Comparison Graph
Circuit Simulation result
Comparison table
IR (uA)
VR (V)
%Error
Measurement Simulation
0.05 750.0 779.1 3.88
0.1 850.0 842.5 -0.88
0.2 920.0 904.3 -1.71
0.5 1005.0 985.0 -1.99
1 1060.0 1045.0 -1.42
2 1120.0 1106.0 -1.25
5 1170.0 1185.0 1.28
9 1200.0 1237.0 3.08