1SS397 Professional Model PSpice Model (Free SPICE Model)

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL
PART NUMBER: 1SS397
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
*S
* PART NUMBER: 1SS397
* MANUFACTURER: TOSHIBA
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.SUBCKT 1SS397_p A K
R_R2 5 6 100
R_R1 3 4 1
C_C1 5 6 2.2n
E_E1 5 K 3 4 1
S_S1 6 K 4 K _S1
RS_S1 4 K 1G
.MODEL _S1 VSWITCH Roff=50MEG Ron=1m Voff=90mV
Von=100mV
G_G1 K A VALUE { V(3,4)-V(5,6) }
D_D1 2 K D1SS397
D_D2 4 K D1SS397
F_F1 K 3 VF_F1 1
VF_F1 A 2 0V
.MODEL D1SS397 D
+ IS=622.22E-12 N=1.8847 RS=1.0000E-6 IKF=84.196E-3
+ CJO=2.2242E-12 M=.30387 VJ=.4756
+ ISR=0 BV=400 IBV=1.0000E-6
+ TT=600e-9
.ENDS
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
100uA
1.0mA
10mA
100mA
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
V1
0Vdc
R1
0.01m
0
U1
1SS397_P

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.0001 0.589 0.584 -0.85
0.0002 0.618 0.618 0.00
0.0005 0.659 0.662 0.46
0.001 0.694 0.696 0.29
0.002 0.731 0.730 -0.14
0.005 0.775 0.776 0.13
0.01 0.812 0.811 -0.12
0.02 0.852 0.848 -0.47
0.05 0.903 0.901 -0.22
0.1 0.947 0.948 0.11

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V(N11360)
10mV 100mV 1.0V 10V 100V
-I(X_U1.D_D1)/(400V/1u)
100f
1.0p
10p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
0
V1
TD = 0
TF = 10ns
PW = 20us
PER = 10us
V1 = 0
TR = 1us
V2 = 400
V2
0Vdc
U1
1SS397_P

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Ct (pF)
%Error
Measurement Simulation
0.01 2.221 2.215 -0.27
0.02 2.203 2.201 -0.09
0.05 2.151 2.159 0.37
0.1 2.091 2.099 0.38
0.2 1.993 1.999 0.30
0.5 1.78 1.788 0.45
1 1.588 1.577 -0.69
2 1.338 1.347 0.67
5 1.072 1.059 -1.21
10 0.881 0.869 -1.36
20 0.702 0.709 1.00
50 0.532 0.538 1.13
100 0.432 0.437 1.16

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Time
19.2us 20.0us 20.8us 21.6us 22.4us 23.2us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 320.00 319.00 -0.31
trb ns 584.00 588.00 0.68
trr ns 904.00 907.00 0.33
V1
TD = 180ns
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.1V
TR = 10ns
V2 = 11V
R1
50
0
U1
1SS397_P

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Reverse Recovery Characteristic Reference
Trj =320(ns)
Trb= 584(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example