CSD01060A PSpice Model (Free SPICE Model)

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: CSD01060A
MANUFACTURER: Cree, Inc.
REMARK: Professional Model
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
SPICE MODEL
*$
* PART NUMBER:CSD01060A
* MANUFACTURER: Cree, Inc.
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
.SUBCKT CSD01060A PIN1 PIN2 CASE
X_U1 PIN2 CASE CSD01060_pro
R_Rs PIN1 CASE 10u
.ENDS
.SUBCKT CSD01060_pro A K
V_V_I A N00040 0Vdc
V_V_Ifwd IN2 K 0Vdc
E_E1 VREV 0 VALUE { IF(V(A,K)>0, 0,V(A,K)) }
E_E3 I_REV0 0 VALUE { 1.4857e-08*exp(0.0089931*(-V(Vrev))) }
E_E4 I_REV 0 VALUE { V(I_rev0)*V(Vr_small)-(-I(V_V_Irev)) }
E_E6 IN K VALUE { IF(V(A,K)>0, V(A,K),0) }
V_V_Irev VREV1 VREV 0Vdc
G_ABMI1 N00040 K VALUE { I(V_V_Ifwd)-V(I_rev) }
E_E2 VR_SMALL 0 TABLE { V(Vrev) }
+ ( (-0.1,1) (0,0) )
D_D3 IN IN2 DCSD01060
R_R1 0 VR_SMALL 10MEG
D_D4 VREV1 0 DCSD01060
R_R2 0 I_REV0 10MEG
R_R3 0 I_REV 10MEG
.MODEL DCSD01060 D
+ IS=10.000E-21 N=.84507 RS=.37671 IKF=12.100
+ CJO=111.88E-12 M=.39264 VJ=.54581
+ BV=1000 IBV=20.000E-6
+ ISR=0 NR=1 EG=3.0 TT=0
.ENDS
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V
I(R1)
0A
0.2A
0.4A
0.6A
0.8A
1.0A
1.2A
1.4A
1.6A
1.8A
2.0A
PIN1
PIN2
CASE
R1
0.01m
V1
0Vdc
0
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
IF(A)
VF(V)
Error (%)
Measurement Simulation
0.1 1.000 0.994 -0.604
0.2 1.040 1.047 0.669
0.4 1.140 1.138 -0.176
0.6 1.220 1.222 0.164
0.8 1.300 1.304 0.307
1 1.380 1.384 0.289
1.2 1.460 1.464 0.273
1.6 1.620 1.621 0.062
2 1.780 1.777 -0.169

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
V(U1:K)
10V 100V5.0V 400V
I(V2)/(600v/1us)
0
5p
10p
15p
20p
25p
30p
35p
40p
45p
50p
V2
0Vdc
PIN1
PIN2
CASE
0
V1
TD = 0
TF = 10ns
PW = 50us
PER = 10us
V1 = 0
TR = 1us
V2 = 600
Junction Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
VR(V)
Cj (pF)
Error(%)
Measurement Simulation
5 45.000 44.965 -0.078
10 35.000 34.983 -0.049
20 27.000 26.917 -0.308
50 19.000 18.910 -0.476
100 14.000 14.423 2.933
200 11.000 10.994 -0.055
500 8.000 7.692 -4.004

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
V1
0Vdc
R1
0.01m
0
PIN1
PIN2
CASE
V_V1
0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV
I(R1)
0A
10uA
20uA
30uA
40uA
50uA
Reverse Characteristic
Circuit Simulation Result
Evaluation Circuit

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
IR(uA)
VR(V)
Error(%)
Measurement Simulation
2 573.000 545.307 -5.078
5 660.000 646.951 -2.017
10 725.000 724.015 -0.136
20 800.000 801.201 0.150
50 910.000 903.053 -0.769