This document summarizes the modeling and simulation of a power MOSFET and its internal body diode and ESD protection diode. It includes: 1) MOSFET model parameters and simulations of its transconductance, Vgs-Id, Rds(on), gate charge, and capacitance characteristics. 2) Body diode simulations of its forward current, reverse recovery, and I-V characteristics. 3) ESD protection diode simulations of its zener voltage characteristic. 4) Comparisons of measurement and simulation results with low error percentages.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameter)
PART NUMBER: 2SK3670
MANUFACTURER: TOSHIBA
Body Diode (Model parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
2
1.6
1.2
gfs
0.8
0.4
Measurement
Simulation
0
0.050 0.150 0.250 0.350 0.450
ID(A)
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.050 0.821 0.833 1.462
0.100 1.100 1.111 1.000
0.200 1.545 1.538 -0.453
0.500 1.950 1.923 -1.385
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
2.0A
1.6A
1.2A
0.8A
0.4A
0A
0V 1.0V 2.0V 3.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
2SK3670
V1
V2
0Vdc
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
0.9
0.7
ID - Drain Current - A
0.5
0.3
0.1
0 1 2
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.100 1.350 1.356 0.444
0.200 1.480 1.452 -1.892
0.500 1.650 1.646 -0.242
1.000 1.850 1.865 0.811
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
600mA
400mA
200mA
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(V3)
V_VDS
Evaluation circuit
V3
U20 0Vdc
0Vdc VDS
VGS
2SK3670
4Vdc
0
Simulation Result
ID=0.5A, VGS=4V Measurement Simulation Error (%)
R DS (on) 1.000  0.998  0.200
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
10V
8V
6V
4V
2V
0V
0 2.0n 4.0n 6.0n 8.0n
V(W1:3)
Time*1mS
Evaluation circuit
V2
U20 0Vdc
Dbreak
PER = 1000u W1
PW = 600u + D1
TF = 10n 2SK3670
TR = 10n
- I2
TD = 0 W 1Adc
I2 = 1m IOFF = 100uA
I1 ION = 0uA
I1 = 0
V1
120Vdc
0
Simulation Result
VDD=120V,ID=1A
Measurement Simulation Error (%)
,VGS=5V
Qgs 1.000 nC 1.008 nC 0.800
Qgd 1.700 nC 1.709 nC 0.529
Qg 4.600 nC 4.300 nC -6.522
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
1.000 85.000 85.213 0.250
2.000 70.000 70.700 1.000
5.000 51.000 51.200 0.392
10.000 36.000 36.158 0.438
20.000 25.000 24.716 1.136
50.000 13.500 13.600 0.740
100.000 8.000 8.195 2.437
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
2.000us 2.050us 2.100us 2.150us 2.200us
V(L1:2)*2 V(L2:2)/7.5
Time
Evaluation circuit
L2 RL
50nH 150
U20
R1 L1
30nH
V1 = 0
V2 = 10 V2 50 V1
TD = 2u R2 2SK3670 75Vdc
TR = 10n
TF = 10n 50
PW = 10u
PER = 200u
0
Simulation Result
ID=0.5 A, VDD=75V
Measurement Simulation Error(%)
VGS=0/10V
ton 40.000 ns 40.645 ns 1.613
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
2.0A
4
2.5
1.6A
3 2
1.2A
1.75
0.8A
0.4A
VGS=1.5V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
U20
Vdsense
0Vdc
10Vdc 2SK3670
Vv ariable
Vstep
5Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
1.0A
100mA
10mA
1.0mA
0V 0.4V 0.8V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1 2SK3670
0.01m
V1
0Vdc
U21
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
1
Measurement
Simulation
Drain reverse current IDR(A)
0.1
0.01
0.001
0 0.2 0.4 0.6 0.8 1 1.2
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
Ifwd(A) Measuremen Simulation %Error
0.001 0.490 0.489 -0.204
0.002 0.510 0.511 0.196
0.005 0.542 0.542 0.000
0.01 0.566 0.567 0.177
0.02 0.598 0.594 -0.669
0.05 0.640 0.639 -0.156
0.1 0.678 0.678 0.000
0.2 0.718 0.720 0.279
0.5 0.778 0.777 -0.129
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.4us 1.5us 1.6us
I(R1)
Time
Evaluation Circuit
R1
50
D2SK3670
V1 = -9.4v V1
V2 = 10.6v
TD = 5n
TR = 10ns
TF = 10ns
PW = 1us U13
PER = 100us
0
Compare Measurement vs. Simulation
Trr(ns) Measurement Simulation Error (%)
Trj+Trb (ns) 159.000 159.464 0.292
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=76(ns)
Trb=83(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
U21
R1 R2
0.01m 2SK3670 100MEG
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006