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Do it with
electrons !
Microscopy
Structure determines properties
We have discussed crystal structure (x-ray diffraction)
But consider now different level of structure
Microstructure (微观结构)- also affects properties
Grey cast iron (灰色生铁) -
rather brittle
Ductile iron - highly ductile
Microscopy
Structure determines properties
We have discussed crystal structure (x-ray diffraction)
But consider now different level of structure
Microstructure - also affects properties
Cemented WC (碳化钨)
cutting tool
Microscopy
Structure determines properties
We have discussed crystal structure (x-ray diffraction)
But consider now different level of structure
Microstructure - also affects properties
Ferroelectric domains in BaTiO3
Microscopy
Structure determines properties
We have discussed crystal structure (x-ray diffraction)
But consider now different level of structure
Microstructure - also can be 'art (美术)'
Electron microscopy
SEM - scanning electron microscopy
tiny electron beam scanned across surface of specimen
backscattered (背散射) or
secondary electrons (二次电子) detected
signal output to synchronized display
Electron microscopy
SEM - scanning electron microscopy
Magnification range 15x to 200,000x
Resolution of 50 Å
Excellent depth of focus
Relatively easy sample prep
SEM - scanning electron microscopy
Electron gun
Don't make x-rays - use
electrons directly
Wavelength:
NOT  = hc/E
(massless photons)
 = h/(2melectronqVo)1/2
(non-relativistic)
 = h/(2melectronqVo + q2Vo
2/c2)1/2
(relativistic (相对论的))
SEM - scanning electron microscopy
 = h / (2melectronqVo + q2Vo
2/c2)1/2
 = 1.22639 / (Vo + 0.97845 · 10-6Vo
2)1/2
(nm) & Vo(volts)
10 kV ——> 0.12 Å
100 kV ——> 0.037 Å
SEM - scanning electron microscopy
SEM - scanning electron microscopy
Wehnelt
SEM - scanning electron microscopy
SEM - scanning electron microscopy
Electron gun
Electron emitter
SEM - scanning electron microscopy
Effects of increasing voltage in
electron gun:
Resolution increased (
decreased)
Penetration increases
Specimen charging increases
(insulators)
Specimen damage increases
Image contrast decreases
 = h/(2melectronqVo + q2Vo2/c2))1/2
SEM - scanning electron microscopy
Field emission electron source:
High electric field at very sharp tip causes electrons to "tunnel"
maybe
SEM - scanning electron microscopy
Field emission electron source:
High electric field at very sharp tip causes electrons to "tunnel"
SEM - scanning electron microscopy
Field emission electron source:
High electric field at very sharp tip causes electrons to "tunnel"
cool tip ——> smaller E in beam
improved coherence
many electrons from small tip ——> finer
probe size, higher current densities (100X >)
problems - high vacuum, more $$$, fussy
SEM - scanning electron microscopy
Lenses
electrons focused by Lorentz force from electromagnetic field
F = qv x B
effectively same as optical lenses
Lenses are ring-shaped
coils generate magnetic field
electrons pass thru hollow center
lens focal length is continuously variable
apertures control, limit beam
SEM - scanning electron microscopy
Specimen
Conducting -
little or no preparation
attach to mounting stub
for insertion into
instrument
may need to provide
conductive path with
Ag paint
Non-conducting -
usually coat with conductive very thin layer (Au, C, Cr)
SEM - scanning electron microscopy
Specimen
Can examine
fracture surfaces
electronic devices
fibers
coatings
particles
etc.
SEM - scanning electron microscopy
Specimen
Can be tilted, translated
Specimen size limited by
size of sample chamber
SEM - scanning electron microscopy
Specimen
What comes from specimen?
Backscattered electrons
Secondary electrons
Fluorescent X-rays
high energy
compositional contrast
low energy
topographic contrast
composition - EDS
Brightness of regions in image
increases as atomic number increases
(less penetration gives more
backscattered electrons)
SEM - scanning electron microscopy
Electron energy distribution
BSEs
SEs
E/Eo
1
SEM - scanning electron microscopy
Backscattered electron detector - solid state detector
electron energy up to 30-50 keV
annular around incident beam
repel secondary electrons with
— biased mesh
images are more sensitive to
chemical composition (electron
yield depends on atomic number)
line of sight necessary
SEM - scanning electron microscopy
Secondary electron detector - scintillation detector
+ bias mesh needed in front of
detector to attract low energy
electrons
line of sight unnecessary
SEM - scanning electron microscopy
Secondary electron detector - scintillation detector
SEM - scanning electron microscopy
Choose correct detector- topography example
Fracture surface in iron
backscattered electrons secondary electrons
SEM - scanning electron microscopy
Composition - what elements present at a particular spot in specimen?
Use solid state detector
Do energy scan for fluorescent X-rays
SEM - scanning electron microscopy
Composition mapping - x-ray fluorescence
Use solid state detector set for X-ray energy for a
particular element in specimen
image X-ray map
SEM - scanning electron microscopy
Interaction volume
Backscattered electrons
come from whole volume
(high energy)
Secondary electrons come
from neck only (low energy)
SEM - scanning electron microscopy
Contrast
Comes from any kind of interaction with electron beam
topography
composition
elements
phases
grain (crystal) orientation
charging affects contrast
SEM - scanning electron microscopy
Magnification
SEM - scanning electron microscopy
Resolution
Determined by
probe size
SEM - scanning electron microscopy
Resolution
Determined by
probe size
SEM - scanning electron microscopy
Depth of field
d = depth of field
 = required spatial resolution
a = convergence angle

d
region of image in focus
tana 
0.5
0.5d


d
For small angles, tana = a
d 

a
Can control depth of field (d) with convergence angle (a)
SEM - scanning electron microscopy
Depth of field
WD
Rap
tana 
Rap
WD

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Scanning electron microscopy

  • 2. Microscopy Structure determines properties We have discussed crystal structure (x-ray diffraction) But consider now different level of structure Microstructure (微观结构)- also affects properties Grey cast iron (灰色生铁) - rather brittle Ductile iron - highly ductile
  • 3. Microscopy Structure determines properties We have discussed crystal structure (x-ray diffraction) But consider now different level of structure Microstructure - also affects properties Cemented WC (碳化钨) cutting tool
  • 4. Microscopy Structure determines properties We have discussed crystal structure (x-ray diffraction) But consider now different level of structure Microstructure - also affects properties Ferroelectric domains in BaTiO3
  • 5. Microscopy Structure determines properties We have discussed crystal structure (x-ray diffraction) But consider now different level of structure Microstructure - also can be 'art (美术)'
  • 6. Electron microscopy SEM - scanning electron microscopy tiny electron beam scanned across surface of specimen backscattered (背散射) or secondary electrons (二次电子) detected signal output to synchronized display
  • 7. Electron microscopy SEM - scanning electron microscopy Magnification range 15x to 200,000x Resolution of 50 Å Excellent depth of focus Relatively easy sample prep
  • 8. SEM - scanning electron microscopy Electron gun Don't make x-rays - use electrons directly Wavelength: NOT  = hc/E (massless photons)  = h/(2melectronqVo)1/2 (non-relativistic)  = h/(2melectronqVo + q2Vo 2/c2)1/2 (relativistic (相对论的))
  • 9. SEM - scanning electron microscopy  = h / (2melectronqVo + q2Vo 2/c2)1/2  = 1.22639 / (Vo + 0.97845 · 10-6Vo 2)1/2 (nm) & Vo(volts) 10 kV ——> 0.12 Å 100 kV ——> 0.037 Å
  • 10. SEM - scanning electron microscopy
  • 11. SEM - scanning electron microscopy Wehnelt
  • 12. SEM - scanning electron microscopy
  • 13. SEM - scanning electron microscopy Electron gun Electron emitter
  • 14. SEM - scanning electron microscopy Effects of increasing voltage in electron gun: Resolution increased ( decreased) Penetration increases Specimen charging increases (insulators) Specimen damage increases Image contrast decreases  = h/(2melectronqVo + q2Vo2/c2))1/2
  • 15. SEM - scanning electron microscopy Field emission electron source: High electric field at very sharp tip causes electrons to "tunnel" maybe
  • 16. SEM - scanning electron microscopy Field emission electron source: High electric field at very sharp tip causes electrons to "tunnel"
  • 17. SEM - scanning electron microscopy Field emission electron source: High electric field at very sharp tip causes electrons to "tunnel" cool tip ——> smaller E in beam improved coherence many electrons from small tip ——> finer probe size, higher current densities (100X >) problems - high vacuum, more $$$, fussy
  • 18. SEM - scanning electron microscopy Lenses electrons focused by Lorentz force from electromagnetic field F = qv x B effectively same as optical lenses Lenses are ring-shaped coils generate magnetic field electrons pass thru hollow center lens focal length is continuously variable apertures control, limit beam
  • 19. SEM - scanning electron microscopy Specimen Conducting - little or no preparation attach to mounting stub for insertion into instrument may need to provide conductive path with Ag paint Non-conducting - usually coat with conductive very thin layer (Au, C, Cr)
  • 20. SEM - scanning electron microscopy Specimen Can examine fracture surfaces electronic devices fibers coatings particles etc.
  • 21. SEM - scanning electron microscopy Specimen Can be tilted, translated Specimen size limited by size of sample chamber
  • 22. SEM - scanning electron microscopy Specimen What comes from specimen? Backscattered electrons Secondary electrons Fluorescent X-rays high energy compositional contrast low energy topographic contrast composition - EDS Brightness of regions in image increases as atomic number increases (less penetration gives more backscattered electrons)
  • 23. SEM - scanning electron microscopy Electron energy distribution BSEs SEs E/Eo 1
  • 24. SEM - scanning electron microscopy Backscattered electron detector - solid state detector electron energy up to 30-50 keV annular around incident beam repel secondary electrons with — biased mesh images are more sensitive to chemical composition (electron yield depends on atomic number) line of sight necessary
  • 25. SEM - scanning electron microscopy Secondary electron detector - scintillation detector + bias mesh needed in front of detector to attract low energy electrons line of sight unnecessary
  • 26. SEM - scanning electron microscopy Secondary electron detector - scintillation detector
  • 27. SEM - scanning electron microscopy Choose correct detector- topography example Fracture surface in iron backscattered electrons secondary electrons
  • 28. SEM - scanning electron microscopy Composition - what elements present at a particular spot in specimen? Use solid state detector Do energy scan for fluorescent X-rays
  • 29. SEM - scanning electron microscopy Composition mapping - x-ray fluorescence Use solid state detector set for X-ray energy for a particular element in specimen image X-ray map
  • 30. SEM - scanning electron microscopy Interaction volume Backscattered electrons come from whole volume (high energy) Secondary electrons come from neck only (low energy)
  • 31. SEM - scanning electron microscopy Contrast Comes from any kind of interaction with electron beam topography composition elements phases grain (crystal) orientation charging affects contrast
  • 32. SEM - scanning electron microscopy Magnification
  • 33. SEM - scanning electron microscopy Resolution Determined by probe size
  • 34. SEM - scanning electron microscopy Resolution Determined by probe size
  • 35. SEM - scanning electron microscopy Depth of field d = depth of field  = required spatial resolution a = convergence angle  d region of image in focus tana  0.5 0.5d   d For small angles, tana = a d   a Can control depth of field (d) with convergence angle (a)
  • 36. SEM - scanning electron microscopy Depth of field WD Rap tana  Rap WD