SlideShare a Scribd company logo
1 of 3
Download to read offline
IOSR Journal of Computer Engineering (IOSR-JCE)
e-ISSN: 2278-0661,p-ISSN: 2278-8727, Volume 17, Issue 5, Ver. II (Sep. – Oct. 2015), PP 45-47
www.iosrjournals.org
DOI: 10.9790/0661-17524547 www.iosrjournals.org 45 | Page
Empirical Study of 2-bit Fast Adder using Simon 2.0
1
Dr. J. Gope (MIEEE), 2
Tishya Sarma Sarkar, 3
Sreshtha Ray
1,2,3
Camellia School of Engineering and Technology /WBUT, Barasat, Kolkata-700124, India
Abstract : The present context of post CMOS era demands highly sophisticated low power consuming high
speed novel integrated chips in nanometer region. SET (Single Electron Transistor) is eventually the highest
priority indexed device that are to be incorporated largely in replacing today’s CMOS transistors. Several
attempts have been made so far in mobilizing SET in designing future electronic circuits. One such attempt is
being reported here in the present work. The target is to model an SET digital 2-bit fast adder to augment the
speed of the super computers or large processing systems. Authors, here, have emphasized in deliberately
integrating SET logics to design the 2-bit fast adder. A comparative study is annexed to advocate the
incorporation of SET in near future.
I. Introduction
„Mesophysics‟, has been studied since long as it signifies vast scope of research in device physics as
well as in numerical computations. Off late a shift has been envisaged in the field of electronic endeavors so that
the use of empirical research in future models is maximized. In this regard „ITRS roadmap‟ of 2003 [1] portrays
the end of CMOS technology by the end of 2015. The possible elements of such catastrophic demolition of
CMOS are-(1) What would be the minimum allowable channel length (2) What would be the minimum
allowable gate oxide thickness (3) What would be the possible depletion depth. Besides, empirical study
revealed that the leakage power increases up to 20% when the CMOS is scaled down below 100 nanometers.
Last, but not the least, is the maximum heat generation that moves up to the temperature nearly equal to the
surface of the sun. This is why the end of CMOS was inevitable.
Once the fear embraced in the mind of Researchers; Scientists from MIT came up with the idea of
quantum electronics that possess numerous advantages. But, technological limitation, material limitation and
other process related limitations shadowed the popularization of quantum electronics. Further technological shift
was envisioned in the embryonic field of SET. SET is considered to be the most promising candidate of future
electronics owing to its excellent merit of transferring one bit of information using one single electron or a very
few electrons. On the other hand, SET possess the virtue of simplicity, robustness, non-volatility, non-
vulnerable and high speed. Likharev [2] categorically demonstrated single electron box in the late 90s. This
research attracted scientists worldwide although till 2005 no such highly recognizable research was reported.
Then after researchers form USA, UK and USSR almost concurrently initiated SET based research. Japanese
researchers moved one step further in obtaining logical synthesis of SET. By the end of 2008 several scientists
started experimental application of SET logic devices. Indian scientists laid this research into a new horizon by
incorporating SETs in replacing CMOS based VLSI, ULSI circuits [3-11].
Here, the authors have limited themselves in modeling SET based 2-bit fast adder or Ripple Carry
Adder by integrating SETs into several subsections. The modus operandi of such adder has been equated with
conventional 2-bit fast adder. Following section describes SET implementation along with its circuit diagram
for nano IC modeling. SIMON 2.0 has been used as test bench to satisfy the logical reasoning of the circuit.
Here the authors render to the earlier publications of Dr. J. Gope [12-22].
II. Implementation of SET 2-Bit Fast Adder Using SIMON
Fig.1 is the simple nano IC structure of SET 2-bit fast adder having inputs A1,B1,A0,B0, initial carry
C1, output S0,S1 and output carry C1.
III. The Operational Maneuver
As depicted a ripple carry adder mimics the pencil and paper method of operation. The rightmost least
significant digit position is the starting point. The two corresponding digits are further added to obtain the result.
Possibly, a carry may be generated of any specific digit position. Accordingly, all digit positions except the
rightmost holds the possibility of having an extra 1 i.e. adding an extra 1. This carry is nothing but is generated
from the just next position to the right. It means that no digit position will have fixed absolute final value until it
has been confirmed that a carry is coming or not from the right. To exemplify, the authors take up pencil and
paper method as stated herein. 9+5=4 and carry 1. The sum without a carry is 9 in pencil and paper method or 1
in binary, it is somehow impossible to signify whether or not a given digit position is ready to pass on a carry to
Empirical Study of 2-bit Fast Adder using Simon 2.0
DOI: 10.9790/0661-17524547 www.iosrjournals.org 46 | Page
the position on its left. Carry look ahead further depends upon calculating on each digit position-whether that
digit position is supposed to propagate a carry from the right. Supposing that a group of four digits are chosen.
Then sequentially the following steps take place:
The 1 bit adders calculate their results and simultaneously the look ahead units perform their own
calculations. If a carry appears at a particular group within 5 gate delays, that carry will appear at the left hand
end of the group and will start propagating through the group to its left. If that carry also propagates to the next
group, the look ahead unit will control it. Similarly, when the particular carry emerges from the next group, the
look ahead unit will convey the same to the next group that it will receive a carry and such propagates till the
end.
IV. Comparative Study
As the Researchers tend to shrink the transistor size below 100 nanometers, the possible heuristic
approach is integrating SET for logical synthesis. The three decisive factors that are primarily considered are
power consumption, speed and size.
As the size is beneath 100nms, thus undoubtedly this size matter falls out of context when compared
with existing CMOS technology. Empirical results revealed after simulating the model using SIMON 2.0 that
the power consumption is less than 1/10th and the speed rises to 200 times faster when compared to
conventional CMOS counterpart. The power dissipation is also low thereby heat generation is significantly
avoided. The speed of IC as stated rises very high thereby the robustness of the model increases manifolds.
Other factors like electron transport phenomenon substantiate the limitations of the conventional CMOS
topology. Moreover, the cost of the device is anticipated to lessen down considerably during mass production.
Henceforth, the author appraise the use of 2-Bit fast adder in future next generation high speed super computers
large processing systems.
V. Conclusion
The circuit eventually attributes all the „Figure of Merits‟ of nano-technology and the same has been
withstand with great confidence by the authors. SIMON2.0 is an excellent platform to model and test the
durability of the proposed designed specification. Convincingly the designed nano 2-bit is hereby designated as
a super work horse for future VLSI/ULSI BASED supercomputers or large processing systems. Authors would
like to tender this short communication as an alternative of the fragilities and limitations of CONVENTIONAL
CMOS technologies only to sustain the gigantic growth of electronics industry keeping in view the MOORE‟S
LAW in past CMOS era.
Acknowledgements
Dr. Jayanta Gope, sincerely acknowledges the financial contribution led down by Honorable Director,
Camellia School of Engineering and Technology to undertake the research in Nano Device Computing
Laboratory.
References
[1] www.ewh.ieee.org/r6/scv/eds/slides/2014-Mar-11-Paolo.pdf
[2] K. K. Likharev : IBM J. Res. Devel., vol 32 , 144 , 1988
[3] A. R. H. Dennard et al., "Design of Micron MOS Switching Devices", presented at the IEEE IntI. Electron Devices Meeting, 6
December, 1972
[4] www.itrs.net/reports.html
[5] Konstantin k. Likharev, “Single- electron device and their applications”, Proc. IEEE Vol. 87, PP. 606-632, April 1999.
[6] Qiaoyan Yu, student member IEEE, “Single-electron devices”, Manuscript received Dec. 12, 2006.
[7] Andreas Scholze, “Simulation of single-electron devices,” Ph.D. dissertation, Univ. of Jena, Germany, 2000.
[8] L .J. Yen, Ahmad Radzi Mat Isa, Karsono Ahmad Dasuki, “Modeling and Simulation of single-electron transistor”, et al. / Journal of
Fundamental Science 1 (2005) 1-6.
[9] Amiza Rasmi & Uda Hashim “Single-electron transistor (SET): Literature Review” journal 2005, koieg University, Malaysia.
[10] M. M. Ziegler and M. R. Stan, “A case for CMOS /nano codesign,”
[11] Davoud Bahrepour*a and Mohammad Javad Sharifib, “A New Single Electron Tunneling Cell Based on Linear Threshold Gate”.
2010 International Conference on Enabling Science and Nanotechnology (ESciNano), 1-3 December, 2010, KLCC, MALAYSIA,
[12] J. Gope et.al., “Logic Synthesis of Contemporary European Model Traffic Control Signaling System Using Novel Nano Scaled
Single Electron Tunneling Technology”, The International Journal Of Science & Technoledge, Vol. 2 Issue 4, 2014, pp-160-170.
[13] J. Gope et.al., “Single Electron Tunneling Technology based Level Sensitive SR Latch Circuit for Next Generation Novel Bios
Architecture” IRACST – Engineering Science and Technology: An International Journal (ESTIJ), Vol.4, No. 2, April 2014, pp-83-
88.
[14] J. Gope et.al., “Empirical Study of Incorporation of SET and Hybrid CMOS-SET in Decision Making Sub-Systems”, International
Journal of Science and Research (IJSR), Volume 3 Issue 6, June 2014, pp-2657-2661.
[15] J. Gope et.al., “Single Electron Transistor Technology Based On-Chip Implementation Of Smoke Detection Alarm For Residential
Security Application”, IJRET: International Journal of Research in Engineering and Technology, Volume: 03 Issue: 04 , Apr-2014,
pp- 205-209.
Empirical Study of 2-bit Fast Adder using Simon 2.0
DOI: 10.9790/0661-17524547 www.iosrjournals.org 47 | Page
[16] J. Gope et.al., “Analytical Modeling of Hybrid CMOS-SET Based Moore and Mealy Logical Circuit”, IPASJ International Journal
of Computer Science (IIJCS), Volume 2, Issue 5, May 2014, pp-6-12.
[17] J. Gope et.al., “Advanced and Secured Rijndael Hardware Realization Using Single Electron Transistor Technology”, International
Journal of Emerging Research in Management & Technology, Volume-3, Issue-5, MAY-2014, pp -182-188.
[18] J. Gope et.al., “Implementation of Decision Making Sub-System Using SET and Hybrid CMOS-SET – A Case Study”, International
Journal of Advanced Research in Computer Science and Software Engineering 4(6), June - 2014, pp. 1085-1090.
[19] J. Gope et.al., “Modelling of Hybrid CMOS-SET based Highly Efficient Parallel-In-Serial-Out Shift Register for Next Generation
Electronics”, International Journal of Engineering and Management Research, Volume-4, Issue-3, June-2014, pp-46-51.
[20] J. Gope, “Single Electron Transistor based Hardware designing of Linear Block Coding Technique for Error Correction in Digital
Communication System”, INTERNATIONAL JOURNAL OF ENGINEERING SCIENCES & RESEARCH TECHNOLOGY, vol:
3(6): June, 2014, pp-382-388.
[21] J. Gope, “A Novel Designing of Controlled Buffer Register using Single Electron Transistor Modelling”, International Journal of
Advanced Research in Computer Science & Technology (IJARCST 2014), Vol. 2, Issue 2, Ver. 2 (April - June 2014), pp-312-316.
[22] J. Gope, “Single Electron Transistor Based IC Architecture Design for Car Intrusion Prevention: A Case Study”,
INTERNATIONAL JOURNAL FOR RESEARCH IN APPLIED SCIENCE AND ENGINEERING TECHNOLOGY (IJRASET),
Vol. 2 Issue IV, April 2014, pp-342-349.
Fig.1: SIMON2.0 made SET 2-bit fast adder nano IC

More Related Content

What's hot

Photonic Computing Presentation V 2.1
Photonic Computing Presentation V 2.1Photonic Computing Presentation V 2.1
Photonic Computing Presentation V 2.1Stuart Wiltshire
 
Prim's Algorithm for Optimizing Fiber Optic Trajectory Planning
Prim's Algorithm for Optimizing Fiber Optic Trajectory PlanningPrim's Algorithm for Optimizing Fiber Optic Trajectory Planning
Prim's Algorithm for Optimizing Fiber Optic Trajectory PlanningUniversitas Pembangunan Panca Budi
 
3D IC Technology
3D IC Technology3D IC Technology
3D IC TechnologyAnupama K
 
Advances on Microwave Ceramic Filters for Wireless Communications (Review Pap...
Advances on Microwave Ceramic Filters for Wireless Communications (Review Pap...Advances on Microwave Ceramic Filters for Wireless Communications (Review Pap...
Advances on Microwave Ceramic Filters for Wireless Communications (Review Pap...IJECEIAES
 
Transparent Technology By Kiran Sapkale
Transparent Technology By Kiran SapkaleTransparent Technology By Kiran Sapkale
Transparent Technology By Kiran SapkaleKiran
 
Transparent electronics
Transparent electronics Transparent electronics
Transparent electronics Sai Viswanath
 
Fabrication and simulating solar cell devices using silvaco tcad tools
Fabrication and simulating solar cell devices using silvaco tcad toolsFabrication and simulating solar cell devices using silvaco tcad tools
Fabrication and simulating solar cell devices using silvaco tcad toolsAlexander Decker
 
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATION
EVALUATION OF OPTICALLY ILLUMINATED MOSFET  CHARACTERISTICS BY TCAD SIMULATIONEVALUATION OF OPTICALLY ILLUMINATED MOSFET  CHARACTERISTICS BY TCAD SIMULATION
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATIONVLSICS Design
 
Moletronix by nisarg vasavada
Moletronix by nisarg vasavadaMoletronix by nisarg vasavada
Moletronix by nisarg vasavadaNisarg Vasavada
 
Design of magnetic dipole based 3D integration nano-circuits for future elect...
Design of magnetic dipole based 3D integration nano-circuits for future elect...Design of magnetic dipole based 3D integration nano-circuits for future elect...
Design of magnetic dipole based 3D integration nano-circuits for future elect...VIT-AP University
 
Opal and inverse opal structures for optical device applications
Opal and inverse opal structures for optical device applicationsOpal and inverse opal structures for optical device applications
Opal and inverse opal structures for optical device applicationsM. Faisal Halim
 
DMD Programme Abstracts 2014_Paper_Stretchable electronics_SBijadi
DMD Programme Abstracts 2014_Paper_Stretchable electronics_SBijadiDMD Programme Abstracts 2014_Paper_Stretchable electronics_SBijadi
DMD Programme Abstracts 2014_Paper_Stretchable electronics_SBijadiSachin Bijadi
 
Transparent electronics
Transparent electronicsTransparent electronics
Transparent electronicsAKSHAY K
 
Transparent electronics
Transparent electronicsTransparent electronics
Transparent electronicsAakash Varma
 

What's hot (19)

3D INTEGRATION
3D INTEGRATION3D INTEGRATION
3D INTEGRATION
 
Photonic Computing Presentation V 2.1
Photonic Computing Presentation V 2.1Photonic Computing Presentation V 2.1
Photonic Computing Presentation V 2.1
 
Nano computing
Nano computingNano computing
Nano computing
 
Molecular Electronics
Molecular ElectronicsMolecular Electronics
Molecular Electronics
 
Prim's Algorithm for Optimizing Fiber Optic Trajectory Planning
Prim's Algorithm for Optimizing Fiber Optic Trajectory PlanningPrim's Algorithm for Optimizing Fiber Optic Trajectory Planning
Prim's Algorithm for Optimizing Fiber Optic Trajectory Planning
 
3D IC'S Technology
3D IC'S Technology3D IC'S Technology
3D IC'S Technology
 
3D IC Technology
3D IC Technology3D IC Technology
3D IC Technology
 
Advances on Microwave Ceramic Filters for Wireless Communications (Review Pap...
Advances on Microwave Ceramic Filters for Wireless Communications (Review Pap...Advances on Microwave Ceramic Filters for Wireless Communications (Review Pap...
Advances on Microwave Ceramic Filters for Wireless Communications (Review Pap...
 
Transparent Technology By Kiran Sapkale
Transparent Technology By Kiran SapkaleTransparent Technology By Kiran Sapkale
Transparent Technology By Kiran Sapkale
 
Transparent electronics
Transparent electronics Transparent electronics
Transparent electronics
 
3D ICs
3D ICs3D ICs
3D ICs
 
Fabrication and simulating solar cell devices using silvaco tcad tools
Fabrication and simulating solar cell devices using silvaco tcad toolsFabrication and simulating solar cell devices using silvaco tcad tools
Fabrication and simulating solar cell devices using silvaco tcad tools
 
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATION
EVALUATION OF OPTICALLY ILLUMINATED MOSFET  CHARACTERISTICS BY TCAD SIMULATIONEVALUATION OF OPTICALLY ILLUMINATED MOSFET  CHARACTERISTICS BY TCAD SIMULATION
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATION
 
Moletronix by nisarg vasavada
Moletronix by nisarg vasavadaMoletronix by nisarg vasavada
Moletronix by nisarg vasavada
 
Design of magnetic dipole based 3D integration nano-circuits for future elect...
Design of magnetic dipole based 3D integration nano-circuits for future elect...Design of magnetic dipole based 3D integration nano-circuits for future elect...
Design of magnetic dipole based 3D integration nano-circuits for future elect...
 
Opal and inverse opal structures for optical device applications
Opal and inverse opal structures for optical device applicationsOpal and inverse opal structures for optical device applications
Opal and inverse opal structures for optical device applications
 
DMD Programme Abstracts 2014_Paper_Stretchable electronics_SBijadi
DMD Programme Abstracts 2014_Paper_Stretchable electronics_SBijadiDMD Programme Abstracts 2014_Paper_Stretchable electronics_SBijadi
DMD Programme Abstracts 2014_Paper_Stretchable electronics_SBijadi
 
Transparent electronics
Transparent electronicsTransparent electronics
Transparent electronics
 
Transparent electronics
Transparent electronicsTransparent electronics
Transparent electronics
 

Viewers also liked

Paper of Tahesin Samira Delwar_ IEEE Conf 2014
Paper of Tahesin Samira Delwar_ IEEE  Conf 2014Paper of Tahesin Samira Delwar_ IEEE  Conf 2014
Paper of Tahesin Samira Delwar_ IEEE Conf 2014TAHESIN SAMIRA DELWAR
 
Trabajo de lengua Quijote, tarea 4
Trabajo de lengua Quijote, tarea 4Trabajo de lengua Quijote, tarea 4
Trabajo de lengua Quijote, tarea 4NoJuSe
 
Modelling of next zen memory cell using low power consuming high speed nano d...
Modelling of next zen memory cell using low power consuming high speed nano d...Modelling of next zen memory cell using low power consuming high speed nano d...
Modelling of next zen memory cell using low power consuming high speed nano d...eSAT Journals
 
Power of Sale Properties
Power of Sale PropertiesPower of Sale Properties
Power of Sale Propertiesevaflores090
 
Damage to-property-before-closing
Damage to-property-before-closingDamage to-property-before-closing
Damage to-property-before-closingevaflores090
 
Sintesis%20de%20biologia[2]
Sintesis%20de%20biologia[2]Sintesis%20de%20biologia[2]
Sintesis%20de%20biologia[2]alexis1296
 
EGGER Worktops Contemporary Collection
EGGER Worktops Contemporary CollectionEGGER Worktops Contemporary Collection
EGGER Worktops Contemporary CollectionEGGER UK
 
Black plague
Black plagueBlack plague
Black plaguemarmar95
 

Viewers also liked (19)

Paper of Tahesin Samira Delwar_ IEEE Conf 2014
Paper of Tahesin Samira Delwar_ IEEE  Conf 2014Paper of Tahesin Samira Delwar_ IEEE  Conf 2014
Paper of Tahesin Samira Delwar_ IEEE Conf 2014
 
Trabajo de lengua Quijote, tarea 4
Trabajo de lengua Quijote, tarea 4Trabajo de lengua Quijote, tarea 4
Trabajo de lengua Quijote, tarea 4
 
Modelling of next zen memory cell using low power consuming high speed nano d...
Modelling of next zen memory cell using low power consuming high speed nano d...Modelling of next zen memory cell using low power consuming high speed nano d...
Modelling of next zen memory cell using low power consuming high speed nano d...
 
Law Yew Wai
Law Yew WaiLaw Yew Wai
Law Yew Wai
 
Map
MapMap
Map
 
Power of Sale Properties
Power of Sale PropertiesPower of Sale Properties
Power of Sale Properties
 
Damage to-property-before-closing
Damage to-property-before-closingDamage to-property-before-closing
Damage to-property-before-closing
 
Sintesis%20de%20biologia[2]
Sintesis%20de%20biologia[2]Sintesis%20de%20biologia[2]
Sintesis%20de%20biologia[2]
 
El proceso Inductivo y deductivo
El proceso Inductivo y deductivoEl proceso Inductivo y deductivo
El proceso Inductivo y deductivo
 
The Heat Is On
The Heat Is OnThe Heat Is On
The Heat Is On
 
TRANSCRIPT MBA
TRANSCRIPT MBATRANSCRIPT MBA
TRANSCRIPT MBA
 
Cmos vlsi nalini
Cmos vlsi naliniCmos vlsi nalini
Cmos vlsi nalini
 
EGGER Worktops Contemporary Collection
EGGER Worktops Contemporary CollectionEGGER Worktops Contemporary Collection
EGGER Worktops Contemporary Collection
 
Modulo III actividad 1
Modulo III actividad 1Modulo III actividad 1
Modulo III actividad 1
 
Digital Commernce
Digital Commernce Digital Commernce
Digital Commernce
 
B1303061015
B1303061015B1303061015
B1303061015
 
Black plague
Black plagueBlack plague
Black plague
 
O180305103105
O180305103105O180305103105
O180305103105
 
N130306100103
N130306100103N130306100103
N130306100103
 

Similar to Empirical Study of 2-bit Fast Adder using SET

Study of Logic Gates Using Quantum Cellular Automata
Study of Logic Gates Using Quantum Cellular AutomataStudy of Logic Gates Using Quantum Cellular Automata
Study of Logic Gates Using Quantum Cellular Automataidescitation
 
Presentation of a fault tolerance algorithm for design of quantum-dot cellul...
Presentation of a fault tolerance algorithm for design of  quantum-dot cellul...Presentation of a fault tolerance algorithm for design of  quantum-dot cellul...
Presentation of a fault tolerance algorithm for design of quantum-dot cellul...IJECEIAES
 
CMOS VLSI design
CMOS VLSI designCMOS VLSI design
CMOS VLSI designRajan Kumar
 
Simulation and Modeling of Silicon Based Single Electron Transistor
Simulation and Modeling of Silicon Based Single Electron TransistorSimulation and Modeling of Silicon Based Single Electron Transistor
Simulation and Modeling of Silicon Based Single Electron TransistorIJECEIAES
 
Single electron transistor technology based on chip implementation of smoke d...
Single electron transistor technology based on chip implementation of smoke d...Single electron transistor technology based on chip implementation of smoke d...
Single electron transistor technology based on chip implementation of smoke d...eSAT Publishing House
 
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...Effect of mesh grid structure in reducing hot carrier effect of nmos device s...
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...ijcsa
 
Iedm 2012 techprogram
Iedm 2012 techprogramIedm 2012 techprogram
Iedm 2012 techprogramhquynh
 
A Unified Approach for Performance Degradation Analysis from Transistor to Gat...
A Unified Approach for Performance Degradation Analysis from Transistor to Gat...A Unified Approach for Performance Degradation Analysis from Transistor to Gat...
A Unified Approach for Performance Degradation Analysis from Transistor to Gat...IJECEIAES
 
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATION
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATIONEVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATION
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATIONVLSICS Design
 
Nanotechnology Presentation For Electronic Industry
Nanotechnology Presentation For Electronic IndustryNanotechnology Presentation For Electronic Industry
Nanotechnology Presentation For Electronic Industrytabirsir
 
Concurrency Within Ternary Galois Processing of Highly-regular 3D Networks Vi...
Concurrency Within Ternary Galois Processing of Highly-regular 3D Networks Vi...Concurrency Within Ternary Galois Processing of Highly-regular 3D Networks Vi...
Concurrency Within Ternary Galois Processing of Highly-regular 3D Networks Vi...AIRCC Publishing Corporation
 
International Journal of Computer Science & Information Technology (IJCSIT)
International Journal of Computer Science & Information Technology (IJCSIT) International Journal of Computer Science & Information Technology (IJCSIT)
International Journal of Computer Science & Information Technology (IJCSIT) ijcsit
 
Nanometric Modelization of Gas Structure, Multidimensional using COMSOL Soft...
Nanometric Modelization of Gas Structure, Multidimensional  using COMSOL Soft...Nanometric Modelization of Gas Structure, Multidimensional  using COMSOL Soft...
Nanometric Modelization of Gas Structure, Multidimensional using COMSOL Soft...IJECEIAES
 
Analytical solution of 2d poisson’s equation using separation of variable met...
Analytical solution of 2d poisson’s equation using separation of variable met...Analytical solution of 2d poisson’s equation using separation of variable met...
Analytical solution of 2d poisson’s equation using separation of variable met...IAEME Publication
 

Similar to Empirical Study of 2-bit Fast Adder using SET (20)

5.masud al noor 60 62
5.masud al noor 60 625.masud al noor 60 62
5.masud al noor 60 62
 
Study of Logic Gates Using Quantum Cellular Automata
Study of Logic Gates Using Quantum Cellular AutomataStudy of Logic Gates Using Quantum Cellular Automata
Study of Logic Gates Using Quantum Cellular Automata
 
Presentation of a fault tolerance algorithm for design of quantum-dot cellul...
Presentation of a fault tolerance algorithm for design of  quantum-dot cellul...Presentation of a fault tolerance algorithm for design of  quantum-dot cellul...
Presentation of a fault tolerance algorithm for design of quantum-dot cellul...
 
CMOS VLSI design
CMOS VLSI designCMOS VLSI design
CMOS VLSI design
 
Simulation and Modeling of Silicon Based Single Electron Transistor
Simulation and Modeling of Silicon Based Single Electron TransistorSimulation and Modeling of Silicon Based Single Electron Transistor
Simulation and Modeling of Silicon Based Single Electron Transistor
 
Ijciet 10 02_067
Ijciet 10 02_067Ijciet 10 02_067
Ijciet 10 02_067
 
Nano mos25
Nano mos25Nano mos25
Nano mos25
 
Single electron transistor technology based on chip implementation of smoke d...
Single electron transistor technology based on chip implementation of smoke d...Single electron transistor technology based on chip implementation of smoke d...
Single electron transistor technology based on chip implementation of smoke d...
 
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...Effect of mesh grid structure in reducing hot carrier effect of nmos device s...
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...
 
E04503052056
E04503052056E04503052056
E04503052056
 
Iedm 2012 techprogram
Iedm 2012 techprogramIedm 2012 techprogram
Iedm 2012 techprogram
 
A Unified Approach for Performance Degradation Analysis from Transistor to Gat...
A Unified Approach for Performance Degradation Analysis from Transistor to Gat...A Unified Approach for Performance Degradation Analysis from Transistor to Gat...
A Unified Approach for Performance Degradation Analysis from Transistor to Gat...
 
Modelling the Single Chamber Solid Oxide Fuel Cell by Artificial Neural Network
Modelling the Single Chamber Solid Oxide Fuel Cell by Artificial Neural NetworkModelling the Single Chamber Solid Oxide Fuel Cell by Artificial Neural Network
Modelling the Single Chamber Solid Oxide Fuel Cell by Artificial Neural Network
 
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATION
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATIONEVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATION
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATION
 
M.tech projects 2012 13
M.tech projects 2012 13M.tech projects 2012 13
M.tech projects 2012 13
 
Nanotechnology Presentation For Electronic Industry
Nanotechnology Presentation For Electronic IndustryNanotechnology Presentation For Electronic Industry
Nanotechnology Presentation For Electronic Industry
 
Concurrency Within Ternary Galois Processing of Highly-regular 3D Networks Vi...
Concurrency Within Ternary Galois Processing of Highly-regular 3D Networks Vi...Concurrency Within Ternary Galois Processing of Highly-regular 3D Networks Vi...
Concurrency Within Ternary Galois Processing of Highly-regular 3D Networks Vi...
 
International Journal of Computer Science & Information Technology (IJCSIT)
International Journal of Computer Science & Information Technology (IJCSIT) International Journal of Computer Science & Information Technology (IJCSIT)
International Journal of Computer Science & Information Technology (IJCSIT)
 
Nanometric Modelization of Gas Structure, Multidimensional using COMSOL Soft...
Nanometric Modelization of Gas Structure, Multidimensional  using COMSOL Soft...Nanometric Modelization of Gas Structure, Multidimensional  using COMSOL Soft...
Nanometric Modelization of Gas Structure, Multidimensional using COMSOL Soft...
 
Analytical solution of 2d poisson’s equation using separation of variable met...
Analytical solution of 2d poisson’s equation using separation of variable met...Analytical solution of 2d poisson’s equation using separation of variable met...
Analytical solution of 2d poisson’s equation using separation of variable met...
 

More from IOSR Journals (20)

A011140104
A011140104A011140104
A011140104
 
M0111397100
M0111397100M0111397100
M0111397100
 
L011138596
L011138596L011138596
L011138596
 
K011138084
K011138084K011138084
K011138084
 
J011137479
J011137479J011137479
J011137479
 
I011136673
I011136673I011136673
I011136673
 
G011134454
G011134454G011134454
G011134454
 
H011135565
H011135565H011135565
H011135565
 
F011134043
F011134043F011134043
F011134043
 
E011133639
E011133639E011133639
E011133639
 
D011132635
D011132635D011132635
D011132635
 
C011131925
C011131925C011131925
C011131925
 
B011130918
B011130918B011130918
B011130918
 
A011130108
A011130108A011130108
A011130108
 
I011125160
I011125160I011125160
I011125160
 
H011124050
H011124050H011124050
H011124050
 
G011123539
G011123539G011123539
G011123539
 
F011123134
F011123134F011123134
F011123134
 
E011122530
E011122530E011122530
E011122530
 
D011121524
D011121524D011121524
D011121524
 

Recently uploaded

Presentation on how to chat with PDF using ChatGPT code interpreter
Presentation on how to chat with PDF using ChatGPT code interpreterPresentation on how to chat with PDF using ChatGPT code interpreter
Presentation on how to chat with PDF using ChatGPT code interpreternaman860154
 
CNv6 Instructor Chapter 6 Quality of Service
CNv6 Instructor Chapter 6 Quality of ServiceCNv6 Instructor Chapter 6 Quality of Service
CNv6 Instructor Chapter 6 Quality of Servicegiselly40
 
08448380779 Call Girls In Greater Kailash - I Women Seeking Men
08448380779 Call Girls In Greater Kailash - I Women Seeking Men08448380779 Call Girls In Greater Kailash - I Women Seeking Men
08448380779 Call Girls In Greater Kailash - I Women Seeking MenDelhi Call girls
 
FULL ENJOY 🔝 8264348440 🔝 Call Girls in Diplomatic Enclave | Delhi
FULL ENJOY 🔝 8264348440 🔝 Call Girls in Diplomatic Enclave | DelhiFULL ENJOY 🔝 8264348440 🔝 Call Girls in Diplomatic Enclave | Delhi
FULL ENJOY 🔝 8264348440 🔝 Call Girls in Diplomatic Enclave | Delhisoniya singh
 
SQL Database Design For Developers at php[tek] 2024
SQL Database Design For Developers at php[tek] 2024SQL Database Design For Developers at php[tek] 2024
SQL Database Design For Developers at php[tek] 2024Scott Keck-Warren
 
Injustice - Developers Among Us (SciFiDevCon 2024)
Injustice - Developers Among Us (SciFiDevCon 2024)Injustice - Developers Among Us (SciFiDevCon 2024)
Injustice - Developers Among Us (SciFiDevCon 2024)Allon Mureinik
 
[2024]Digital Global Overview Report 2024 Meltwater.pdf
[2024]Digital Global Overview Report 2024 Meltwater.pdf[2024]Digital Global Overview Report 2024 Meltwater.pdf
[2024]Digital Global Overview Report 2024 Meltwater.pdfhans926745
 
Finology Group – Insurtech Innovation Award 2024
Finology Group – Insurtech Innovation Award 2024Finology Group – Insurtech Innovation Award 2024
Finology Group – Insurtech Innovation Award 2024The Digital Insurer
 
Slack Application Development 101 Slides
Slack Application Development 101 SlidesSlack Application Development 101 Slides
Slack Application Development 101 Slidespraypatel2
 
Enhancing Worker Digital Experience: A Hands-on Workshop for Partners
Enhancing Worker Digital Experience: A Hands-on Workshop for PartnersEnhancing Worker Digital Experience: A Hands-on Workshop for Partners
Enhancing Worker Digital Experience: A Hands-on Workshop for PartnersThousandEyes
 
IAC 2024 - IA Fast Track to Search Focused AI Solutions
IAC 2024 - IA Fast Track to Search Focused AI SolutionsIAC 2024 - IA Fast Track to Search Focused AI Solutions
IAC 2024 - IA Fast Track to Search Focused AI SolutionsEnterprise Knowledge
 
Handwritten Text Recognition for manuscripts and early printed texts
Handwritten Text Recognition for manuscripts and early printed textsHandwritten Text Recognition for manuscripts and early printed texts
Handwritten Text Recognition for manuscripts and early printed textsMaria Levchenko
 
Understanding the Laravel MVC Architecture
Understanding the Laravel MVC ArchitectureUnderstanding the Laravel MVC Architecture
Understanding the Laravel MVC ArchitecturePixlogix Infotech
 
Transcript: #StandardsGoals for 2024: What’s new for BISAC - Tech Forum 2024
Transcript: #StandardsGoals for 2024: What’s new for BISAC - Tech Forum 2024Transcript: #StandardsGoals for 2024: What’s new for BISAC - Tech Forum 2024
Transcript: #StandardsGoals for 2024: What’s new for BISAC - Tech Forum 2024BookNet Canada
 
Data Cloud, More than a CDP by Matt Robison
Data Cloud, More than a CDP by Matt RobisonData Cloud, More than a CDP by Matt Robison
Data Cloud, More than a CDP by Matt RobisonAnna Loughnan Colquhoun
 
Automating Business Process via MuleSoft Composer | Bangalore MuleSoft Meetup...
Automating Business Process via MuleSoft Composer | Bangalore MuleSoft Meetup...Automating Business Process via MuleSoft Composer | Bangalore MuleSoft Meetup...
Automating Business Process via MuleSoft Composer | Bangalore MuleSoft Meetup...shyamraj55
 
A Call to Action for Generative AI in 2024
A Call to Action for Generative AI in 2024A Call to Action for Generative AI in 2024
A Call to Action for Generative AI in 2024Results
 
04-2024-HHUG-Sales-and-Marketing-Alignment.pptx
04-2024-HHUG-Sales-and-Marketing-Alignment.pptx04-2024-HHUG-Sales-and-Marketing-Alignment.pptx
04-2024-HHUG-Sales-and-Marketing-Alignment.pptxHampshireHUG
 
The Codex of Business Writing Software for Real-World Solutions 2.pptx
The Codex of Business Writing Software for Real-World Solutions 2.pptxThe Codex of Business Writing Software for Real-World Solutions 2.pptx
The Codex of Business Writing Software for Real-World Solutions 2.pptxMalak Abu Hammad
 
How to Troubleshoot Apps for the Modern Connected Worker
How to Troubleshoot Apps for the Modern Connected WorkerHow to Troubleshoot Apps for the Modern Connected Worker
How to Troubleshoot Apps for the Modern Connected WorkerThousandEyes
 

Recently uploaded (20)

Presentation on how to chat with PDF using ChatGPT code interpreter
Presentation on how to chat with PDF using ChatGPT code interpreterPresentation on how to chat with PDF using ChatGPT code interpreter
Presentation on how to chat with PDF using ChatGPT code interpreter
 
CNv6 Instructor Chapter 6 Quality of Service
CNv6 Instructor Chapter 6 Quality of ServiceCNv6 Instructor Chapter 6 Quality of Service
CNv6 Instructor Chapter 6 Quality of Service
 
08448380779 Call Girls In Greater Kailash - I Women Seeking Men
08448380779 Call Girls In Greater Kailash - I Women Seeking Men08448380779 Call Girls In Greater Kailash - I Women Seeking Men
08448380779 Call Girls In Greater Kailash - I Women Seeking Men
 
FULL ENJOY 🔝 8264348440 🔝 Call Girls in Diplomatic Enclave | Delhi
FULL ENJOY 🔝 8264348440 🔝 Call Girls in Diplomatic Enclave | DelhiFULL ENJOY 🔝 8264348440 🔝 Call Girls in Diplomatic Enclave | Delhi
FULL ENJOY 🔝 8264348440 🔝 Call Girls in Diplomatic Enclave | Delhi
 
SQL Database Design For Developers at php[tek] 2024
SQL Database Design For Developers at php[tek] 2024SQL Database Design For Developers at php[tek] 2024
SQL Database Design For Developers at php[tek] 2024
 
Injustice - Developers Among Us (SciFiDevCon 2024)
Injustice - Developers Among Us (SciFiDevCon 2024)Injustice - Developers Among Us (SciFiDevCon 2024)
Injustice - Developers Among Us (SciFiDevCon 2024)
 
[2024]Digital Global Overview Report 2024 Meltwater.pdf
[2024]Digital Global Overview Report 2024 Meltwater.pdf[2024]Digital Global Overview Report 2024 Meltwater.pdf
[2024]Digital Global Overview Report 2024 Meltwater.pdf
 
Finology Group – Insurtech Innovation Award 2024
Finology Group – Insurtech Innovation Award 2024Finology Group – Insurtech Innovation Award 2024
Finology Group – Insurtech Innovation Award 2024
 
Slack Application Development 101 Slides
Slack Application Development 101 SlidesSlack Application Development 101 Slides
Slack Application Development 101 Slides
 
Enhancing Worker Digital Experience: A Hands-on Workshop for Partners
Enhancing Worker Digital Experience: A Hands-on Workshop for PartnersEnhancing Worker Digital Experience: A Hands-on Workshop for Partners
Enhancing Worker Digital Experience: A Hands-on Workshop for Partners
 
IAC 2024 - IA Fast Track to Search Focused AI Solutions
IAC 2024 - IA Fast Track to Search Focused AI SolutionsIAC 2024 - IA Fast Track to Search Focused AI Solutions
IAC 2024 - IA Fast Track to Search Focused AI Solutions
 
Handwritten Text Recognition for manuscripts and early printed texts
Handwritten Text Recognition for manuscripts and early printed textsHandwritten Text Recognition for manuscripts and early printed texts
Handwritten Text Recognition for manuscripts and early printed texts
 
Understanding the Laravel MVC Architecture
Understanding the Laravel MVC ArchitectureUnderstanding the Laravel MVC Architecture
Understanding the Laravel MVC Architecture
 
Transcript: #StandardsGoals for 2024: What’s new for BISAC - Tech Forum 2024
Transcript: #StandardsGoals for 2024: What’s new for BISAC - Tech Forum 2024Transcript: #StandardsGoals for 2024: What’s new for BISAC - Tech Forum 2024
Transcript: #StandardsGoals for 2024: What’s new for BISAC - Tech Forum 2024
 
Data Cloud, More than a CDP by Matt Robison
Data Cloud, More than a CDP by Matt RobisonData Cloud, More than a CDP by Matt Robison
Data Cloud, More than a CDP by Matt Robison
 
Automating Business Process via MuleSoft Composer | Bangalore MuleSoft Meetup...
Automating Business Process via MuleSoft Composer | Bangalore MuleSoft Meetup...Automating Business Process via MuleSoft Composer | Bangalore MuleSoft Meetup...
Automating Business Process via MuleSoft Composer | Bangalore MuleSoft Meetup...
 
A Call to Action for Generative AI in 2024
A Call to Action for Generative AI in 2024A Call to Action for Generative AI in 2024
A Call to Action for Generative AI in 2024
 
04-2024-HHUG-Sales-and-Marketing-Alignment.pptx
04-2024-HHUG-Sales-and-Marketing-Alignment.pptx04-2024-HHUG-Sales-and-Marketing-Alignment.pptx
04-2024-HHUG-Sales-and-Marketing-Alignment.pptx
 
The Codex of Business Writing Software for Real-World Solutions 2.pptx
The Codex of Business Writing Software for Real-World Solutions 2.pptxThe Codex of Business Writing Software for Real-World Solutions 2.pptx
The Codex of Business Writing Software for Real-World Solutions 2.pptx
 
How to Troubleshoot Apps for the Modern Connected Worker
How to Troubleshoot Apps for the Modern Connected WorkerHow to Troubleshoot Apps for the Modern Connected Worker
How to Troubleshoot Apps for the Modern Connected Worker
 

Empirical Study of 2-bit Fast Adder using SET

  • 1. IOSR Journal of Computer Engineering (IOSR-JCE) e-ISSN: 2278-0661,p-ISSN: 2278-8727, Volume 17, Issue 5, Ver. II (Sep. – Oct. 2015), PP 45-47 www.iosrjournals.org DOI: 10.9790/0661-17524547 www.iosrjournals.org 45 | Page Empirical Study of 2-bit Fast Adder using Simon 2.0 1 Dr. J. Gope (MIEEE), 2 Tishya Sarma Sarkar, 3 Sreshtha Ray 1,2,3 Camellia School of Engineering and Technology /WBUT, Barasat, Kolkata-700124, India Abstract : The present context of post CMOS era demands highly sophisticated low power consuming high speed novel integrated chips in nanometer region. SET (Single Electron Transistor) is eventually the highest priority indexed device that are to be incorporated largely in replacing today’s CMOS transistors. Several attempts have been made so far in mobilizing SET in designing future electronic circuits. One such attempt is being reported here in the present work. The target is to model an SET digital 2-bit fast adder to augment the speed of the super computers or large processing systems. Authors, here, have emphasized in deliberately integrating SET logics to design the 2-bit fast adder. A comparative study is annexed to advocate the incorporation of SET in near future. I. Introduction „Mesophysics‟, has been studied since long as it signifies vast scope of research in device physics as well as in numerical computations. Off late a shift has been envisaged in the field of electronic endeavors so that the use of empirical research in future models is maximized. In this regard „ITRS roadmap‟ of 2003 [1] portrays the end of CMOS technology by the end of 2015. The possible elements of such catastrophic demolition of CMOS are-(1) What would be the minimum allowable channel length (2) What would be the minimum allowable gate oxide thickness (3) What would be the possible depletion depth. Besides, empirical study revealed that the leakage power increases up to 20% when the CMOS is scaled down below 100 nanometers. Last, but not the least, is the maximum heat generation that moves up to the temperature nearly equal to the surface of the sun. This is why the end of CMOS was inevitable. Once the fear embraced in the mind of Researchers; Scientists from MIT came up with the idea of quantum electronics that possess numerous advantages. But, technological limitation, material limitation and other process related limitations shadowed the popularization of quantum electronics. Further technological shift was envisioned in the embryonic field of SET. SET is considered to be the most promising candidate of future electronics owing to its excellent merit of transferring one bit of information using one single electron or a very few electrons. On the other hand, SET possess the virtue of simplicity, robustness, non-volatility, non- vulnerable and high speed. Likharev [2] categorically demonstrated single electron box in the late 90s. This research attracted scientists worldwide although till 2005 no such highly recognizable research was reported. Then after researchers form USA, UK and USSR almost concurrently initiated SET based research. Japanese researchers moved one step further in obtaining logical synthesis of SET. By the end of 2008 several scientists started experimental application of SET logic devices. Indian scientists laid this research into a new horizon by incorporating SETs in replacing CMOS based VLSI, ULSI circuits [3-11]. Here, the authors have limited themselves in modeling SET based 2-bit fast adder or Ripple Carry Adder by integrating SETs into several subsections. The modus operandi of such adder has been equated with conventional 2-bit fast adder. Following section describes SET implementation along with its circuit diagram for nano IC modeling. SIMON 2.0 has been used as test bench to satisfy the logical reasoning of the circuit. Here the authors render to the earlier publications of Dr. J. Gope [12-22]. II. Implementation of SET 2-Bit Fast Adder Using SIMON Fig.1 is the simple nano IC structure of SET 2-bit fast adder having inputs A1,B1,A0,B0, initial carry C1, output S0,S1 and output carry C1. III. The Operational Maneuver As depicted a ripple carry adder mimics the pencil and paper method of operation. The rightmost least significant digit position is the starting point. The two corresponding digits are further added to obtain the result. Possibly, a carry may be generated of any specific digit position. Accordingly, all digit positions except the rightmost holds the possibility of having an extra 1 i.e. adding an extra 1. This carry is nothing but is generated from the just next position to the right. It means that no digit position will have fixed absolute final value until it has been confirmed that a carry is coming or not from the right. To exemplify, the authors take up pencil and paper method as stated herein. 9+5=4 and carry 1. The sum without a carry is 9 in pencil and paper method or 1 in binary, it is somehow impossible to signify whether or not a given digit position is ready to pass on a carry to
  • 2. Empirical Study of 2-bit Fast Adder using Simon 2.0 DOI: 10.9790/0661-17524547 www.iosrjournals.org 46 | Page the position on its left. Carry look ahead further depends upon calculating on each digit position-whether that digit position is supposed to propagate a carry from the right. Supposing that a group of four digits are chosen. Then sequentially the following steps take place: The 1 bit adders calculate their results and simultaneously the look ahead units perform their own calculations. If a carry appears at a particular group within 5 gate delays, that carry will appear at the left hand end of the group and will start propagating through the group to its left. If that carry also propagates to the next group, the look ahead unit will control it. Similarly, when the particular carry emerges from the next group, the look ahead unit will convey the same to the next group that it will receive a carry and such propagates till the end. IV. Comparative Study As the Researchers tend to shrink the transistor size below 100 nanometers, the possible heuristic approach is integrating SET for logical synthesis. The three decisive factors that are primarily considered are power consumption, speed and size. As the size is beneath 100nms, thus undoubtedly this size matter falls out of context when compared with existing CMOS technology. Empirical results revealed after simulating the model using SIMON 2.0 that the power consumption is less than 1/10th and the speed rises to 200 times faster when compared to conventional CMOS counterpart. The power dissipation is also low thereby heat generation is significantly avoided. The speed of IC as stated rises very high thereby the robustness of the model increases manifolds. Other factors like electron transport phenomenon substantiate the limitations of the conventional CMOS topology. Moreover, the cost of the device is anticipated to lessen down considerably during mass production. Henceforth, the author appraise the use of 2-Bit fast adder in future next generation high speed super computers large processing systems. V. Conclusion The circuit eventually attributes all the „Figure of Merits‟ of nano-technology and the same has been withstand with great confidence by the authors. SIMON2.0 is an excellent platform to model and test the durability of the proposed designed specification. Convincingly the designed nano 2-bit is hereby designated as a super work horse for future VLSI/ULSI BASED supercomputers or large processing systems. Authors would like to tender this short communication as an alternative of the fragilities and limitations of CONVENTIONAL CMOS technologies only to sustain the gigantic growth of electronics industry keeping in view the MOORE‟S LAW in past CMOS era. Acknowledgements Dr. Jayanta Gope, sincerely acknowledges the financial contribution led down by Honorable Director, Camellia School of Engineering and Technology to undertake the research in Nano Device Computing Laboratory. References [1] www.ewh.ieee.org/r6/scv/eds/slides/2014-Mar-11-Paolo.pdf [2] K. K. Likharev : IBM J. Res. Devel., vol 32 , 144 , 1988 [3] A. R. H. Dennard et al., "Design of Micron MOS Switching Devices", presented at the IEEE IntI. Electron Devices Meeting, 6 December, 1972 [4] www.itrs.net/reports.html [5] Konstantin k. Likharev, “Single- electron device and their applications”, Proc. IEEE Vol. 87, PP. 606-632, April 1999. [6] Qiaoyan Yu, student member IEEE, “Single-electron devices”, Manuscript received Dec. 12, 2006. [7] Andreas Scholze, “Simulation of single-electron devices,” Ph.D. dissertation, Univ. of Jena, Germany, 2000. [8] L .J. Yen, Ahmad Radzi Mat Isa, Karsono Ahmad Dasuki, “Modeling and Simulation of single-electron transistor”, et al. / Journal of Fundamental Science 1 (2005) 1-6. [9] Amiza Rasmi & Uda Hashim “Single-electron transistor (SET): Literature Review” journal 2005, koieg University, Malaysia. [10] M. M. Ziegler and M. R. Stan, “A case for CMOS /nano codesign,” [11] Davoud Bahrepour*a and Mohammad Javad Sharifib, “A New Single Electron Tunneling Cell Based on Linear Threshold Gate”. 2010 International Conference on Enabling Science and Nanotechnology (ESciNano), 1-3 December, 2010, KLCC, MALAYSIA, [12] J. Gope et.al., “Logic Synthesis of Contemporary European Model Traffic Control Signaling System Using Novel Nano Scaled Single Electron Tunneling Technology”, The International Journal Of Science & Technoledge, Vol. 2 Issue 4, 2014, pp-160-170. [13] J. Gope et.al., “Single Electron Tunneling Technology based Level Sensitive SR Latch Circuit for Next Generation Novel Bios Architecture” IRACST – Engineering Science and Technology: An International Journal (ESTIJ), Vol.4, No. 2, April 2014, pp-83- 88. [14] J. Gope et.al., “Empirical Study of Incorporation of SET and Hybrid CMOS-SET in Decision Making Sub-Systems”, International Journal of Science and Research (IJSR), Volume 3 Issue 6, June 2014, pp-2657-2661. [15] J. Gope et.al., “Single Electron Transistor Technology Based On-Chip Implementation Of Smoke Detection Alarm For Residential Security Application”, IJRET: International Journal of Research in Engineering and Technology, Volume: 03 Issue: 04 , Apr-2014, pp- 205-209.
  • 3. Empirical Study of 2-bit Fast Adder using Simon 2.0 DOI: 10.9790/0661-17524547 www.iosrjournals.org 47 | Page [16] J. Gope et.al., “Analytical Modeling of Hybrid CMOS-SET Based Moore and Mealy Logical Circuit”, IPASJ International Journal of Computer Science (IIJCS), Volume 2, Issue 5, May 2014, pp-6-12. [17] J. Gope et.al., “Advanced and Secured Rijndael Hardware Realization Using Single Electron Transistor Technology”, International Journal of Emerging Research in Management & Technology, Volume-3, Issue-5, MAY-2014, pp -182-188. [18] J. Gope et.al., “Implementation of Decision Making Sub-System Using SET and Hybrid CMOS-SET – A Case Study”, International Journal of Advanced Research in Computer Science and Software Engineering 4(6), June - 2014, pp. 1085-1090. [19] J. Gope et.al., “Modelling of Hybrid CMOS-SET based Highly Efficient Parallel-In-Serial-Out Shift Register for Next Generation Electronics”, International Journal of Engineering and Management Research, Volume-4, Issue-3, June-2014, pp-46-51. [20] J. Gope, “Single Electron Transistor based Hardware designing of Linear Block Coding Technique for Error Correction in Digital Communication System”, INTERNATIONAL JOURNAL OF ENGINEERING SCIENCES & RESEARCH TECHNOLOGY, vol: 3(6): June, 2014, pp-382-388. [21] J. Gope, “A Novel Designing of Controlled Buffer Register using Single Electron Transistor Modelling”, International Journal of Advanced Research in Computer Science & Technology (IJARCST 2014), Vol. 2, Issue 2, Ver. 2 (April - June 2014), pp-312-316. [22] J. Gope, “Single Electron Transistor Based IC Architecture Design for Car Intrusion Prevention: A Case Study”, INTERNATIONAL JOURNAL FOR RESEARCH IN APPLIED SCIENCE AND ENGINEERING TECHNOLOGY (IJRASET), Vol. 2 Issue IV, April 2014, pp-342-349. Fig.1: SIMON2.0 made SET 2-bit fast adder nano IC