This document provides specifications for the KSP10 NPN epitaxial silicon transistor. It includes maximum ratings, electrical characteristics at 25°C, typical characteristics graphs, and package dimensions. The KSP10 is a VHF/UHF transistor in a TO-921 package with a current gain bandwidth of 650 MHz and collector-base feedback capacitance between 0.35-0.65 pF.

1. ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSP10
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 3.0 V
PC Collector Power Dissipation (Ta=25°C) 350 mW
Derate above 25°C 2.8 mW/°C
PC Collector Power Dissipation (TC=25°C) 1.0 W
Derate above 25°C 8.0 W/°C
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55~150 °C
Rth(j-c) Thermal Resistance, Junction to Case 125 °C/W
Rth(j-a) Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Test Condition Min. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 30 V
BVCEO Collector-Emitter Breakdown Voltage IC=1mA, IB=0 25 V
BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 3.0 V
ICBO Collector Cut-off Current VCB=25V, IE=0 100 nA
IEBO Emitter Cut-off Current VEB=2V, IC=0 100 nA
hFE DC Current Gain VCE=10V, IC=4mA 60
VCE (sat) Collector-Emitter Saturation Voltage IC=4mA, IB=0.4mA 0.5 V
VBE (on) Base-Emitter On Voltage VCE=10V, IC=4mA 0.95 V
fT Current Gain Bandwidth Product VCE=10V, IC=4mA, f=100MHz 650 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 0.7 pF
Crb Collector Base Feedback Capacitance VCB=10V, IE=0, f=1MHz 0.35 0.65 pF
Cc·rbb´ Collector Base Time Constant VCB=10V, IC=4mA,
f=31.8MHz
9.0 ps
KSP10
VHF/UHF transistor
1. Base 2. Emitter 3. Collector
TO-921

2. ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSP10
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Current Gain Bandwidth Product Figure 4. Rectangular Form
Figure 5. Polar Form Figure 6. Rectangular Form
1 10 100 1000
1
10
100
1000
VCE = 10V
hFE,DCCURRENTGAIN
IC[mA], COLLECTOR CURRENT
0.1 1 10 100 1000
10
100
1000
10000
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat),VCE(sat)[V],SATURATIONVOLTAGE
IC[mA], COLLECTOR CURRENT
1 10 100
10
100
1000
10000
VCE = 10V
f=100MHz
fT[MHz],CURRENTGAIN-BANDWIDTHPRODUCT
IC[mA], COLLECTOR CURRENT
100 1000
20
40
60
80
100
120
140
Ω
-bib
gib
yib[],INPUTADMITTANCE
f[MHz], FREQUENCY
0 10 20 30 40 50 60 70 80 90
-60
-50
-40
-30
-20
-10
0
Ω
700
400 200 100
1000MHz
Ωyob[],OUTPUTADMITTANCE
gib[ ]
100 1000
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
Ω
bfb
-gfb
yfb[],FORWARDTRANSFERADMITTANCE
f[MHz], FREQUENCY

3. ©2002 Fairchild Semiconductor Corporation
KSP10
Rev. A2, September 2002
Typical Characteristics (Continued)
Figure 7. Polar Form Figure 8. Rectangular Form
Figure 9. Polar Form Figure 10. Rectangular Form
Figure 11. Polar Form
70 60 50 40 30 20 10 0 -10 -20 -30
10
20
30
40
50
60
70
80
90
600
Ω
700
400200
100
1000MHz
Ω
jbfb[],
gfb[ ]
100 1000
0
1
2
3
4
5
6
Ω
-brb
yfb[],
REVERSETRANSFERADMITTANCE
f[MHz], FREQUENCY
-2.0 -1.6 -1.2 -0.8 -0.4 0.0 0.4 0.8 1.2 1.6 2.0
-5
-4
-3
-2
-1
0
1
2
3
Ω
700
400
200
100
1000MHz
Ω
jbrb[],
gfb[ ]
100 1000
0
1
2
3
4
5
6
7
8
9
10
gob
bob
Ω
yob[],OUTPUTADMITTANCE
f[MHz], FREQUENCY
0 2 4 6 8
0
2
4
6
8
10
12
14
16
Ω
700
400
200
100
1000MHz
Ω
jbob[],
gob[ ]

4. 0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47±0.40
1.02±0.10
(0.25)4.58±0.20
4.58
+0.25
–0.15
0.38
+0.10
–0.05
0.38
+0.10
–0.05
TO-92
Package Dimensions
KSP10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

5. ©2002 Fairchild Semiconductor Corporation Rev. I1
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