SPICE MODEL of TK20A60U (Standard+BDS Model) in SPICE PARK
•
0 likes•419 views
SPICE MODEL of TK20A60U (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
Recommended
Recommended
More Related Content
What's hot
What's hot (20)
Similar to SPICE MODEL of TK20A60U (Standard+BDS Model) in SPICE PARK
Similar to SPICE MODEL of TK20A60U (Standard+BDS Model) in SPICE PARK (20)
More from Tsuyoshi Horigome
More from Tsuyoshi Horigome (20)
Recently uploaded
Recently uploaded (20)
SPICE MODEL of TK20A60U (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: MOSFET (Model Parameters) PART NUMBER: TK20A60U MANUFACTURER: TOSHIBA REMARK: Body Diode (Model Parameters) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 1
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 2
- 3. Transconductance Characteristic Circuit Simulation Result 20 Measurement Simulation Transconductance GFS (s) 16 12 8 4 0 0 5 10 15 20 Drain Current ID (A) Comparison table gfs Id(A) Error (%) Measurement Simulation 1 3.958 4.016 1.47 2 5.506 5.602 1.75 5 8.431 8.576 1.72 10 11.514 11.723 1.82 20 15.529 15.823 1.89 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 3
- 4. Vgs-Id Characteristic Circuit Simulation result 40A 32A 24A 16A 8A 0A 0V 2V 4V 6V 8V 10V I(V3) V_VGS Evaluation circuit V3 U1 TK20A60U VDS 20Vdc VGS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 4
- 5. Comparison Graph Circuit Simulation Result 40 Measurement Simulation 30 Drain current ID (A) 20 10 0 0 2 4 6 8 10 Gate−source voltage VGS (V) Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1 5.075 5.119 0.87 2 5.300 5.330 0.57 5 5.750 5.759 0.16 10 6.250 6.259 0.14 20 7.000 6.996 -0.06 30 7.650 7.585 -0.85 40 8.150 8.098 -0.64 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 5
- 6. Rds(on) Characteristic Circuit Simulation result 10A 9A 8A 7A 6A 5A 4A 3A 2A 1A 0A 0V 0.33V 0.66V 0.99V 1.32V 1.65V I(Vsense) V_VDS Evaluation circuit Vsense U1 TK20A60U VDS 10Vdc VGS 10Vdc 0 Simulation Result ID = 10A, VGS = 10V Measurement Simulation Error (%) R DS (on) m 165 165.100 0.04 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 6
- 7. Gate Charge Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 10n 20n 30n 40n V(W1:3) Time*1mA Evaluation circuit Vsense I1 U1 D1 TK20A60U Dbreak 20Adc W1 + I2 - TD = 0 W VD ION = 0A 400Vdc IOFF = 1mA 0 Simulation Result VDD=400V, ID=20A, Measurement Simulation Error (%) VGS=10V Qgs nC 9.000 9.018 0.20 Qgd nC 11.000 11.071 0.65 Qg nC 27.500 25.246 -8.20 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 7
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd (pF) VDS (V) Error (%) Measurement Simulation 40 195.100 195.120 0.01 60 105.400 107.500 1.99 80 80.700 80.000 -0.87 100 66.000 65.000 -1.52 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 8
- 9. Switching Time Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V -2V 4.81us 4.90us 5.00us 5.10us 5.20us 5.30us V(2) V(3)/30 Time Evaluation circuit Vsense RL 3 50nH 30 R1 L3 U1 2 TK20A60U V1 = 0 50 30nH VDD V2 = 20 V1 300Vdc TD = 5u R2 TR = 10n 50 TF = 10n PW = 10u PER = 10m 0 Simulation Result ID=10A, VDD=300V Measurement Simulation Error (%) VGS=0/10V ton ns 80.00 79.70 -0.38 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 9
- 10. Output Characteristic Circuit Simulation result 40A 8 10 32A 7.5 24A 7 16A 6.5 6 8A VGS=5.5V 0A 0V 10V 20V 30V 40V 50V I(Vsense) V_VD Evaluation circuit Vsense U1 TK20A60U VD 10Vdc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 10
- 11. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.4V 0.8V 1.2V 1.6V I(Vsense) V_VDS Evaluation Circuit R1 0.01m U1 V1 TK20A60U 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 11
- 12. Comparison Graph Circuit Simulation Result 100 Measurement Simulation Drain reverse current IDR (A) 10 1 0.1 0 0.4 0.8 1.2 Drain−source voltage VDS (V) Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 0.1 0.605 0.607 0.33 0.2 0.630 0.632 0.32 0.5 0.670 0.668 -0.30 1 0.705 0.698 -0.99 2 0.740 0.734 -0.81 5 0.800 0.803 0.38 10 0.880 0.888 0.91 20 1.040 1.036 -0.38 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 12
- 13. Reverse Recovery Characteristics Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 10us 12us 16us 20us 24us 28us I(R1) Time Evaluation Circuit R1 50 V1 = -9.3V V1 V2 = 10.7V U1 TD = 18ns TK20A60U TR = 7.5ns TF = 10ns PW = 20us PER = 100us 0 Compare Measurement vs. Simulation Characteristics Unit Measurement Simulation Error (%) trj us 0.720 0.732 1.67 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 13
- 14. Reverse Recovery Characteristic Reference Measurement Trj= 720 (ns) Trb= 1.12 (us) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 14