This document summarizes the modeling and simulation of an IRFB9N65A power MOSFET. It includes: 1) Details of the MOSFET components and manufacturer. 2) Descriptions and parameters of the Pspice models used to simulate the MOSFET's electrical characteristics including its power MOSFET, body diode and transconductance models. 3) Simulation results and comparisons to measurement data for various electrical characteristics like transconductance, Vgs-Id, Id-Rds(on), gate charge, switching times and reverse recovery. 4) Diagrams of the evaluation circuits used to simulate the characteristics.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Standard)
PART NUMBER: IRFB9N65A
MANUFACTURER: International Rectifier
REMARK: Body Diode (Standard)
Bee Technologies Inc.
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2. POWER MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
]
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3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
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4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs (S)
ID(A) Error (%)
Measurement Simulation
1.00 3.00 3.13 4.17
2.00 4.44 4.41 -0.79
5.00 6.67 6.79 1.90
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5. Vgs-Id Characteristic
Circuit Simulation result
10A
1.0A
500mA
4.0V 5.0V 6.0V 7.0V
I(V2)
V_V1
Evaluation circuit
V2
0V dc
V3
V1 10 0V dc
10 Vd c
0
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6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.50 4.78 4.77 -0.29
1.00 4.98 4.95 -0.51
2.00 5.22 5.22 0.07
5.00 5.72 5.77 0.93
10.00 6.28 6.40 1.91
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Id-Rds(on) Characteristic
Circuit Simulation result
10A
1.0A
100mA
100mV 1.0V 10V 100V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
V3
100Vdc
V1
10Vdc
0
Simulation Result
ID=5.0, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.70  0.70  0
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8. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 10n 20n 30n 40n 50n
V(W1:3)
Time*10ms
Evaluation circuit
V2
0V dc
Db reak
PE R = 10 00 u D1
PW = 6 00 u I2
TF = 10 n W1
TR = 10n + 5.2 Adc
TD = 0
I2 = 1 0m
-
I1 W
I1 = 0 IOFF = 1mA V1
ION = 0 uA 32 5V dc
0
Simulation Result
VDD=325V,ID=5.2A Measurement Simulation Error (%)
Qgs 8.00 nC 8.03 nC 0.42
Qgd 12.00 nC 11.97 nC -0.28
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
10.00 325.00 321.00 -1.23
20.00 220.00 216.00 -1.82
50.00 127.00 127.50 0.39
100.00 87.00 85.00 -2.30
200.00 60.00 57.50 -4.17
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10. Switching Time Characteristic
Circuit Simulation result
12V
VDS =325 (V)
VGS = 10V
8V
4V
0V
5.00us 5.05us 5.10us 5.15us
V(2) V(3)/32.5
Time
Evaluation circuit
L1 RL
3
V3 0.05uH 62
0Vdc
VDD
325
L2 RG
2
0.03uH
V1 = 0
V1 9.1
V2 = 10 0
TD = 5u
TR = 6n
TF = 7n
PW = 5u
PER = 100u
0 0
Simulation Result
ID=5.2A, VDD=325V
Measurement Simulation Error(%)
VGS=0/10V
td (on) 14.00 ns 14.03 ns 0.20
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

11. Output Characteristic
Circuit Simulation result
10A
10.0V 7.0V
6.0V
5.5V
1.0A VGS=5.0V
100mA
100mV 1.0V 10V 100V
I(V2)
V_V3
Evaluation circuit
V2
0V dc
V3
10 0V dc
V1
10 Vd c
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

12. Forward Current Characteristic of Reverse Diode
Circuit Simulation Result
20A
10A
1.0A
100mA
0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(V2)
V_V3
Evaluation Circuit
R1
0.0 1m
V2
0V dc
V3
0V dc
0
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13. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.100 0.620 0.620 0.079
0.200 0.644 0.644 -0.073
0.500 0.676 0.677 0.133
1.000 0.708 0.706 -0.253
2.000 0.746 0.743 -0.397
5.000 0.812 0.817 0.589
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
12us 14us 16us 18us 20us 22us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = {-9.4} V1
V2 = {10.7}
TD = 1.275u
TR = 10n
TF = 10n
PW = 15u
PER = 100u
0
0
Compare Measurement vs. Simulation
Measurement Simulation Error(%)
Trj 1.040 us 1.042 us 0.144
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15. Reverse Recovery Characteristic Reference
Measurement
trj = 1.04(us)
trb = 1.10(us)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005