SPICE MODEL of 2SK3301 (Standard+BDS Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET
PART NUMBER: 2SK3301
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter) /ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

MOSFET MODEL

Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

0.50
Measurement
Simulation

0.40

0.30
GFS (s)

0.20

0.10

0.00
0.00 0.10 0.20 0.30 0.40 0.50 0.60

DRAIN CURRENT ID (A)

Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
0.050 0.143 0.145 1.469
0.100 0.205 0.205 0.098
0.200 0.286 0.291 1.608
0.500 0.427 0.431 0.937


Vgs-Id Characteristic

Circuit Simulation result

550mA

100mA

10mA

1.0mA
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V
I(V3)
V_V1

Evaluation circuit

V3

0Vdc

U18

V2
10Vdc
V1
2SK3301
0Vdc

0


Comparison Graph


1000
Measurement
Simulation

100
Drain Current - Id (mA)

10

1
1 10 100
Gate-Source Voltage - Vgs (V)

Simulation Result

VGS(V)
ID(mA) Error (%)

5.000 3.300 3.448 4.488
10.000 3.450 3.541 2.626
20.000 3.640 3.672 0.865
50.000 3.940 3.933 -0.173
100.000 4.190 4.223 0.776
200.000 4.550 4.638 1.941
500.000 5.200 5.454 4.883


Rds(on) Characteristic

500mA

400mA

200mA

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V
I(V2)
V_VDS
Evaluation circuit

V2

0Vdc
U22

VDS
VGS 2SK3301
0Vdc
10Vdc

0

Simulation Result

ID= 0.5A, VGS= 10V Measurement Simulation Error (%)
R DS (on) 15.000  15.000  0.000


Gate Charge Characteristic
12V

10V

8V

6V

4V

2V

0V
0 1n 2n 3n 4n 5n 6n 7n 8n 9n 10n
V(W1:3)
Time*1mS
Evaluation circuit

V2

0Vdc
U28

W1
+ D1
2SK3301 I2
-
PER = 1000u 0.4545Adc
PW = 600u W Dbreak
TF = 10n IOFF = 100uA
TR = 10n ION = 0uA
TD = 0 ROFF = 1G
I2 = 1m RON = 1.0p
I1 = 0 I1 V1
100Vdc

0

Simulation Result

VDD=100V,ID=45A
Measurement Simulation Error (%)
,VGS=10V
Qgs 1.000 nC 1.411 nC 41.100
Qgd 3.000 nC 2.558 nC -14.733
Qg 7.700 nC 5.570 nC -27.662


Gate Charge Characteristic Reference

12

10
GATE VOLTAGE Vg (V)

8

6

4

2

0
0 1 2 3 4 5 6 7 8 9 10
GATE CHARGE Qg(nc)


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.100 82.197 82.000 -0.240
0.200 72.541 73.000 0.633
0.500 55.139 56.000 1.562
1.000 42.188 41.000 -2.816
2.000 24.628 24.000 -2.550
5.000 12.243 12.000 -1.985
10.000 4.950 5.000 1.010
20.000 2.241 2.200 -1.808


Switching Time Characteristic

15V
14V
13V
12V
11V
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
1.854us 1.900us 1.950us 2.000us 2.050us 2.100us 2.150us
V(2) V(3)/40
Time
Evaluation circuit

3 L2

30n
U13

L1 2
RL
30nH 800
V1 = 0
V2 = 10 V2 2SK3301
TD = 2u R1
TR = 6n VDD
TF = 7n 50 400Vdc
PW = 10u
PER = 20u

0

Simulation Result

ID=0.5A, VDD=400V,VGS=10V Measurement Simulation Error(%)
ton 60.000 ns 59.477 ns -0.872


Output Characteristic

200mA

180mA

160mA

140mA

120mA
4.2 V
100mA

80mA
4.0 V
60mA

40mA 3.8 V

20mA
VGS=3.6V
0A
0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V
I(V3)
V_V2

Evaluation circuit

V3

0Vdc

U24

2SK3301 V2
V1
0
0

0


Output Characteristic Reference


BODY DIODE SPICE MODEL

Forward Current Characteristic


1.0A

100mA

10mA

1.0mA
0V 0.5V 1.0V 1.5V
I(R1)
V1(V1)

Evaluation Circuit

R1

0.01m

V1
0Vdc U16
2SK3301

0


Comparison Graph


1000

Measurement
Simulation
Drain Reverse Current IDR (mA)

100

10

1
0.00 0.50 1.00 1.50 2.00
Source-Drain Voltage VDS (V)

Simulation Result

VDS(V) VDS(V)
IDR(A) %Error
1.000 0.516 0.518 0.388
2.000 0.546 0.545 -0.183
5.000 0.584 0.582 -0.342
10.000 0.612 0.610 -0.327
20.000 0.644 0.640 -0.621
50.000 0.688 0.686 -0.291
100.000 0.734 0.730 -0.545
200.000 0.788 0.786 -0.254
500.000 0.896 0.889 -0.781
1000.000 1.006 0.980 -2.584


Reverse Recovery Characteristic

400mA

0A

-400mA
16us 20us 24us 28us 32us 36us 40us 44us 48us 52us
I(RL21)
Time
Evaluation Circuit

RL21

50

V1 = -9.38

V2 = 10.60
V21
TD = 12.4u
TF = 10n U21
TR = 10n
PW = 20u 2SK3301
PER = 60u

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trj 0.900 us 0.902 us 0.222
trb 2.800 us 1.049 us -62.536
trr 3.700 us 1.951 us -47.270


Reverse Recovery Characteristic Reference

Trj=0.90(us)
Trb=2.8(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


ESD PROTECTION DIODE SPICE MODEL

Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 20V 40V 60V 80V 100V 120V 140V 160V 180V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m
Open

U19
V1
0Vdc

2SK3301

0


Zener Voltage Characteristic Reference


SPICE MODEL of 2SK3301 (Standard+BDS Model) in SPICE PARK

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