Chemical Vapor Deposition (CVD) is a process that uses a vapor-phase reaction to produce a solid compound or element onto a substrate. It involves heating a reactive gas to decompose it and react it with the substrate at elevated temperatures, typically around 900°C. The process coats the substrate and produces byproducts that must be removed. CVD is commonly used to deposit tool coatings like diamond coatings and for semiconductor manufacturing applications. There are several types of CVD processes that differ in how they activate the reaction, such as plasma CVD which uses plasma at lower temperatures of 300-700°C. CVD has many applications in electronics, wear resistance coatings, and oxidation resistance coatings.

1. Chemical Vapor Deposition
• Deposition of a compound (or element) produced by a vapor-
phase reduction between a reactive element and gas
– Produces by-products that must be removed from the
process as well
• Process typically done at elevated temps (~900ºC)
– Coating will crack upon cooling if large difference in
thermal coefficients of expansion
– Plasma CVD done at 300-700ºC (reaction is activated by
plasma)
• Typical for tool coatings
• Applications
– Diamond Coating, Carburizing, Nitriding, Chromizing,
Aluminizing and Siliconizing processes
– Semiconductor manufacturing

9. Classification Reactions of CVD
① Base Plate Reaction Method
② Heat Resolving Method
③ Hydrogen Reduction Method
④ Reacting Vaporization Method

10. Base Plate Reaction
• Ti + 2BCl +3H → TiB2 + 6HCl (1173~1273K)
• Mo + 2SiCl4 +4H2 → MoSi2 + 8HCl (1273~1423K)
• C + TiCl4 + 2H2 → TiC + 4HCl (1573~1773K)
Heat Resolve Method
• SiH4 → Si + 2H2 (1023~1223K)
• CH3SiCl3 → SiC + 3HCl (1423~1973K)
• Ga(C2H5)3 + AsH3 → GaAs+ R.P. (793~953K)

11. Hydrogen Reduction Method
• WF6 + 3H2 → W + 6HF (823~1273K)
• TiCl4 + 2BCl + 5H2 →
TiB2+10HCl(1173~1573K)
• MoCl5 + 5/2H2 → Mo + 5HCl (1073~1423K)
React Vaporization Method
• TiCl4 + CH4 → TiC + 4HCl (1423~1673K)
• TiCl4+1/2N2+2H2 → TiN4 +4HCl(1323~1623K)
• BCl3 + NH3 → BN + 3HCl (1373~1923K)

12. Application Example of CVD
Electronics Si, GaAs, Ga-Al-As-P, SiO2, W,
SnO2, InO2, Y2O3, Ce2O3, Ta2O5,
ZnS, CdTe
Wear
Resistance
TiC, TiN, VC, Al2O3, VN, ZrN,
ZrC, TiB2, WC, SiC, Si3N4, BN,
Si-B-N
Oxidation
Resistance
Ti-Si-C, ZrC, Ta, Nb, TaC, TiB2,
MoSi2, SiO2, SiC, Si3N4

13. Gas
Liquid
Solid
Gas
Purify
Flow
Control
Material Control System Reaction System
Exhaust
System
Pump
Temperature Control
Pressure Control
Reaction
Furnace
Exhaust gas
Treatment
Basic System of CVD Process

14. Exhaust
Electrode
Reaction
Vessel
Base Plate
Gas
Heater
Exhaust
Reaction
Vessel
Base Plate
Reaction
Gas
Carrier Gas
Vaporizer
Hot Wall Type CVD
Cold Wall Type CVD

15. Hard Film Forming Condition
Item Composition Melting Point Hardness Hv React Material Precipitation
Temperature
Carbide B4C
SiC
TiC
HfC
WC
2,623K
3,123K
3,453K
3,163K
3,003K
4,900
3,000
3,200
2,700
2,400
BCl3, CH4
SiCl4, Ch4
TiCl4, CH4
HfCl4, CH4
WCl4, CH4
1,473K
1,473~1,773K
1,273~1,373K
1,373~1,573K
1,173~1,423K
Nitride BN
Si3N4
TiN
HfN
3,273K
2,173K
3,203K
2,973K
4,700
3,300
2,400
2,000
BCl3, NH3
SiCl4, NH3
TiCl4, N2
HfCl4, N2
1,273~1,523K
1,373~1,823K
1,173~1,373K
1,173~1,573K
Oxide Al2O3 2,303K 2,100 AlCl3, CO2, H2

16. Hoist
Furnace
Hard Tip
Vacuum
Pump
Pressure
Gauge Cooling
Trap
Tip
Heater
Vaporizer
Heater
Pump
Power Supply
Pressure
Gauge
Electric
Furnace
Filament
Thermo-
couple
Power Supply
Pressure
Gauge
Thermocouple
Base Plate
Quartz
Reaction
Room
Filament
Electric
Furnace
Hot CVD Device Hot Filament CVD Device

17. Plasma CVD Process
• Low Temperature Process
• Amorphous-slicon Film
• Plasma: Direct Current,
Radio Frequency; 13.56MHz
Microwave; 2.56GHz
• Reactor Room: ≦1Torr
• Base Plate Temperature: ≦673K

18. Vacuum
Gauge
Heater
Ｂａｓｅ Plate Electrode
RF Electrode
Base Plate
Earth Sealed
Gas Introducing
Matching Box
Power Supply
Exhaust
Parallel Type Plasma CVD

19. ECR Plasma CVD Process
• Electron Cyclotron Resonance
• Low Gas Pressure: 1/1000~1/10Pa
• High Density
• High Activated Plasma

20. Gas(2
)
Plasma Flow
Gas
Cooling Water
Microwave
Rectangle Tube
Magnet Coil
Plasma Drawing
Work
Exhaust System
ECR Plasma Basic System
Plasma

21. Beam CVD Process
• Optical Chemical Reaction
• Laser Beam: CO2 Laser; 10.06μm
YAG Laser; 1.06μm
Ar Ion Laser; 0.05μm
Excimer Laser; F2 (157nm), ArF (193nm),
KrF (248nm), XeCl (308nm), XeF (351nm),
• Lump: Mercury Lamp(253.7; 185nm)
Heavy Hydrogen Lamp(160~400nm)
Rare Gas Lamp(Xe;147nm, Kr;124nm, Ar;107nm)

22. Characteristics of Laser CVD
• Local Precipitation
• Choice of Reduction
• Specific Place Film Forming
• Micro Area Film Forming
• Big Area Film Forming
• High Purity Film Forming
• Synthesize Fine Powder

23. Excimer Laser
Excimer Laser
Condenser Lens
Reaction Gas
Reaction Room
Base Plate
Exhaust
Heater
Reaction Gas
Reaction Room
Exhaust
Condenser Lens
LASER CVD Device

32. Advanced Coating Application

35. DLC Film Forming Device
Vacuum Pump
Filament
Base Plate
Electrode
Electron beam
Graphite
Diamond Like Carbon Film Ion Plating

36. Surface Treatment and Compound
Modification for Die and Ejector Pin
Modification to Material Functional Modification
by Film Formation
Modification by
Compound Treatment
Soft nitriding treatment
Carbo-nitriding
treatment
Sulfurize-nitriding treat
Gus nitriding treatment
Peening treatment
Functional heat
treatment
PVD, CVD treatment
Non-electrolytic plating
Boriding treatment
Thermal splaying treat.
Ion inplantation
treatment
Electric discharge
modification treatment
Ion nitriding + PVD,
CVD treatment
Nitriding + peening
treatment
Electric discharge
process + nitriding
treatment + LASER

37. Expected Effect by Adoption of Surface Treatment for Die
Expected effect Specific content
Long life for die Decrease of frictional coefficient
Improvement of wear & corrosion resistance
Improvement of heat resistance & parting ability
Light weight of die Miniaturization of die dimension
Change to light weight die material
Short delivery Change of die material & omission of heat treatment
Decrease of die cost Change of die material & omission of heat treatment
Shortening of processing Speed-up of processing speed
Omission of intermediate annealing
Expansion of application Application to difficulty processing material,
thick product & complicated product
High qualification of works Decrease of processing temperature, improvement
of dimensional accuracy & processing surface
Price decrease of works Mass production for short period,
Omission of after processing & after heat treatment

38. Adopted Main Surface Treatment for Die
Surface heat
treatment
Coating
Nitriding and related treatment (heat diffusion of N)
Diffusion and penetration of metal (diffusion of Cr, Ti, V)
Wet Process
Electro-plating ---- Hard Cr plating
Chemical plating
Ni-P plating
Ni-B plating
Dispersion plating
Dry process
Thermal splaying
Padding
PVD
CVD
Gas flame thermal splaying
Electric arc thermal splaying
Plasma thermal splaying
Arc process
Spark process
Vacuum evaporation
spattering
Ion plating
Atmospheric hot CVD
Decompression hot CVD
Plasma CVD

39. Thank You