This document summarizes an 8Gb NROM data storage memory chip. Key features include storing 4 bits per cell using multi-level programming, parallel programming and verification of multiple bits simultaneously to improve write speed, and a constant current erase technique that ramps the erase voltage slowly to limit current peaks and allow more cells to erase in parallel. The memory achieves fast page program speeds above 4.5MB/s while maintaining tight program voltage distributions below 350mV through these techniques.
7SR220 series relays include for directional control of the overcurrent and earth fault functionality and are typically installed where fault current can flow in either direction i.e. on interconnected systems. Relays have five current and four voltage inputs they are housed in E6 or E8 cases.
Servomax is a well know and established company in delivering Power Distribution Unit, Electric Equipments manufacturers, suppliers of Power Distribution Unit india, indian Electric Equipments.
An ECG-on-Chip for Wearable Cardiac Monitoring Devices ecgpapers
This paper describes a highly integrated, low power chip solution for ECG signal processing in wearable
devices. The chip contains an instrumentation amplifier with programmable gain, a band-pass filter, a 12-bit
SAR ADC, a novel QRS detector, 8K on-chip SRAM, and relevant control circuitry and CPU interfaces. The
analog front end circuits accurately senses and digitizes the raw ECG signal, which is then filtered to extract the
QRS. The sampling frequency used is 256 Hz. ECG samples are buffered locally on an asynchronous FIFO and
is read out using a faster clock, as and when it is required by the host CPU via an SPI interface. The chip was
designed and implemented in 0.35ȝm standard CMOS process. The analog core operates at 1V while the digital
circuits and SRAM operate at 3.3V. The chip total core area is 5.74 mm 2 and consumes 9.6ȝW. Small size and
low power consumption make this design suitable for usage in wearable heart monitoring devices.
7SR220 series relays include for directional control of the overcurrent and earth fault functionality and are typically installed where fault current can flow in either direction i.e. on interconnected systems. Relays have five current and four voltage inputs they are housed in E6 or E8 cases.
Servomax is a well know and established company in delivering Power Distribution Unit, Electric Equipments manufacturers, suppliers of Power Distribution Unit india, indian Electric Equipments.
An ECG-on-Chip for Wearable Cardiac Monitoring Devices ecgpapers
This paper describes a highly integrated, low power chip solution for ECG signal processing in wearable
devices. The chip contains an instrumentation amplifier with programmable gain, a band-pass filter, a 12-bit
SAR ADC, a novel QRS detector, 8K on-chip SRAM, and relevant control circuitry and CPU interfaces. The
analog front end circuits accurately senses and digitizes the raw ECG signal, which is then filtered to extract the
QRS. The sampling frequency used is 256 Hz. ECG samples are buffered locally on an asynchronous FIFO and
is read out using a faster clock, as and when it is required by the host CPU via an SPI interface. The chip was
designed and implemented in 0.35ȝm standard CMOS process. The analog core operates at 1V while the digital
circuits and SRAM operate at 3.3V. The chip total core area is 5.74 mm 2 and consumes 9.6ȝW. Small size and
low power consumption make this design suitable for usage in wearable heart monitoring devices.
The 7SR191 Capa is a numerical protection device with a highly comprehensive functional software package.
The market for power capacitors is continually growing due to the expanding power network driven by increased customer demand. Power capacitors improve the performance, quality and efficiency of the system and minimize power loss.
Apec 2014 Presentation by Albert CharpentierAgileSwitch
Albert Charpentier, Chief Technology Officer at AgileSwitch LLC, spoke at the APEC 2014 and presented his paper on the topic “How A New Power Stack Communication System Improves IGBT Reliability and Shortens Development Time” under the IS3.1 High Power Industrial Session chaired by Dr. Krishna Shenai.
AgileSwitch manufacturers SiC MOSFET Gate Drivers for leading SiC module manufacturers in the industry - Wolfspeed, Semikron, Rohm. Using patented technology AgileSwitch has built a driver with fault monitoring the prevent catastrophic conditions damaging your modules.
Interior Permanent Magnet (IPM) motor drivecontroltrix
IPM is an interior Permanent magnet with self sensing and gets efficiency comparable to PMSM at much lower cost. Sensorless Vector control of IPM ensures better performance at low speeds, smoother operation, and position control possible.
Microchip's PIC Micro Controller - Presentation Covers- Embedded system,Application, Harvard and Von Newman Architecture, PIC Microcontroller Instruction Set, PIC assembly language programming, PIC Basic circuit design and its programming etc.
Presentation by Sri Jandhyala
Outline:
1. LED Driver Requirements and Regional Standards
2. Topology Overview
3. Meeting Power Factor/Harmonic Content Requirements
4. Comparison of Switching Topologies
5. Conclusions
Power Factor is a measure of how efficiently electrical power is consumed. In the ideal world Power Factor would be unity (or 1). Unfortunately in the real world Power Factor is reduced by highly inductive loads to 0.7 or less. This induction is caused by equipment such as lightly loaded electric motors and fluorescent lighting ballasts and welding sets, etc. Three phase power factor can be corrected using different approaches like sine wave control, vector control, single cycle control or Vienne Bridge Rectifier.
Summary:
1. LED Lighting is evolving requiring new solutions that can support the latest generations of LEDs on the market
2. Topology choices are evolving to improve efficiency and reduce overall system cost
3. Intelligent control can enhance energy saving and extend operation lifetime even if more complex drivers are needed to support
4. We have only begun to harness what is possible with Solid State General Lighting
The 7SR191 Capa is a numerical protection device with a highly comprehensive functional software package.
The market for power capacitors is continually growing due to the expanding power network driven by increased customer demand. Power capacitors improve the performance, quality and efficiency of the system and minimize power loss.
Apec 2014 Presentation by Albert CharpentierAgileSwitch
Albert Charpentier, Chief Technology Officer at AgileSwitch LLC, spoke at the APEC 2014 and presented his paper on the topic “How A New Power Stack Communication System Improves IGBT Reliability and Shortens Development Time” under the IS3.1 High Power Industrial Session chaired by Dr. Krishna Shenai.
AgileSwitch manufacturers SiC MOSFET Gate Drivers for leading SiC module manufacturers in the industry - Wolfspeed, Semikron, Rohm. Using patented technology AgileSwitch has built a driver with fault monitoring the prevent catastrophic conditions damaging your modules.
Interior Permanent Magnet (IPM) motor drivecontroltrix
IPM is an interior Permanent magnet with self sensing and gets efficiency comparable to PMSM at much lower cost. Sensorless Vector control of IPM ensures better performance at low speeds, smoother operation, and position control possible.
Microchip's PIC Micro Controller - Presentation Covers- Embedded system,Application, Harvard and Von Newman Architecture, PIC Microcontroller Instruction Set, PIC assembly language programming, PIC Basic circuit design and its programming etc.
Presentation by Sri Jandhyala
Outline:
1. LED Driver Requirements and Regional Standards
2. Topology Overview
3. Meeting Power Factor/Harmonic Content Requirements
4. Comparison of Switching Topologies
5. Conclusions
Power Factor is a measure of how efficiently electrical power is consumed. In the ideal world Power Factor would be unity (or 1). Unfortunately in the real world Power Factor is reduced by highly inductive loads to 0.7 or less. This induction is caused by equipment such as lightly loaded electric motors and fluorescent lighting ballasts and welding sets, etc. Three phase power factor can be corrected using different approaches like sine wave control, vector control, single cycle control or Vienne Bridge Rectifier.
Summary:
1. LED Lighting is evolving requiring new solutions that can support the latest generations of LEDs on the market
2. Topology choices are evolving to improve efficiency and reduce overall system cost
3. Intelligent control can enhance energy saving and extend operation lifetime even if more complex drivers are needed to support
4. We have only begun to harness what is possible with Solid State General Lighting
One of the most helpful presentation for academic and non academic purpose. This presentation can be presented for 40-45 mins. It contains both technical and non technical details of working of a fingerprint bio-metric scanner.
Understanding the Reliability and Power-Efficiency Trade-offs of Modern FPGAs...Behzad Salami
SAFARI Live Seminar, 31st MAY, By: Behzad Salami
In this presentation, we will comprehensively cover our findings on the undervolting of multiple components of FPGAs, i.e., SRAM-based on-chip memories (BRAMs), Look-Up Tables (LUTs), and DRAM-based High-Bandwidth Memories (HBMs). The talk will conclude with a discussion of open problems and possible directions for future research.
Link: https://safari.ethz.ch/safari-live-seminar-behzad-salami-31-may-2022/
The 7SR210 series of relays provide overcurrent and earth fault protection. These relays are typically applied to provide the main protection on feeders and interconnectors and the back-up protection on items of plant such as transformers, Relays have four current inputs and are housed in E6 or E8 cases
Qualcomm centriq 2400 hot chips final submission correctedDileep Bhandarkar
World's 1st 10 nm Server Chip
QDT-designed custom core powering Qualcomm Centriq2400 Processor
5thgeneration custom core design
Designed from the ground up to meet the needs of cloud service providers
Fully ARMv8-compliant
AArch64 only
Supports EL3 (TrustZone) and EL2 (hypervisor)
•
Includes optional cryptography acceleration instructions
AES, SHA1, SHA2-256
Designed for performance, optimized for power
The Need for Complex Analytics from Forwarding Pipelines Netronome
Nic Viljoen, Research Engineer, (including Tom Tofigh and Bryan Sullivan form AT&T) presentation from ONS 2016 at Santa Clara Convention Center in Santa Clara, CA.
2. p. 2
A 4 bits per cell 8Gb NROM Data-Storage
Memory with Enhanced Write Performance
Ran Sahar1
, Avi Lavan1
, Eran Geyari1
, Amit Berman1
,
Itzic Cohen1
, Ori Tirosh1
, Kobi Danon1
, Amichai Givant1
Yoram Betser1
, Alexander Kushnarenko1
, Yaal Horesh1
,
Boaz Eitan1
,Yair Sofer1
, Ron Eliyahu1
, Eduardo Maayan1
,
Wang Pei Jen2
, Yan Feng2
, Lin Ching Yao2
, Kwon Yi Jin2
,
Kwon Sung Woo2
, Cai En Jing2
, Yi Jing Jing2
,
Kim Jong Oh2
, Yi Guan Jiun2
1
Saifun Semiconductors Ltd. Israel,
2
SMIC International Co. Ltd. China
3. p. 3
Agenda
• The QUAD NROM Basics & Challenges
• General Architecture
• Multi Level Parallel Program & Verify
• Read & Sensing Method
• Constant Current Erase Technique
• Summary
4. p. 4
• The QUAD NROM Basics & Challenges
• General Architecture
• Multi Level Parallel Program & Verify
• Read & Sensing Method
• Constant Current Erase Technique
• Summary
5. p. 5
The Quad NROM Basics
• Two storage areas per cell
• Each storage area is Multi-Level
Bit 1 & Bit 2 Bit 3 & Bit 4
11 01 00 10
Four bits per cell
• Two phase Program algorithm
• Error Detection + Moving Read algorithm
Reliability
6. p. 6
The Write Performance Challenges
• Fast Programming & Narrow Vt distributions
• Parallel Programming and Verify algorithm
• Multiple Bit Line Voltage Programming
• Fast Erase with no over erase
• Constant current Erase algorithm
• Fast and reliable Read
Page program speed >4.5MB/s
Program Vt distribution <350mV
7. p. 7
• The QUAD NROM Basics & Challenges
• General Architecture
• Multi Level Parallel Program & Verify
• Read & Sensing Method
• Constant Current Erase Technique
• Summary
9. p. 9
• The QUAD NROM Basics & Challenges
• General Architecture
• Multi Level Parallel Program & Verify
• Read & Sensing Method
• Constant Current Erase Technique
• Summary
10. p. 10
Accessing the Array for Programming
0V
VPGM
0V
0V
SELECT transistors area
ISOLATION
ISOLATION
ISOLATION
ISOLATION
ISOLATION
ISOLATION
ISOLATION
ISOLATION
SELECT transistors area
BL Driver BL Driver
• The challenge for fast program
• Many “bits” to be programmed
• Different target Vt & different “bits” conditions
• Different target Vt – e.g. 01, 00, 10
• Different conditions – “other half cell” having one of
11, 01, 00, 10 target Vt
11. p. 11
Dual BL Voltage Concept - Motivation
• Programming speed of one storage area depends on
the state of the other storage area
• A “bit” with a programmed second bit will program faster
than an erased second bit
“1”“1””0”
“1” “0””0”
1
2
12. p. 12
Parallel Program Principles
• QUAD programming uses different BL voltages (VPPD) per level:
• Level “01” is programmed via VPPD01_1, VPPD01_2
• Level “00” is programmed via VPPD00_1, VPPD00_2
• Level “10” is programmed via VPPD10_1, VPPD10_2
’10’’00’’01’’11’
VPPD01_1
VPPD01_2
VPPD00_1
VPPD00_2
VPPD10_1
VPPD10_2
• All levels end programming at the same time
• Minimal number of pulses
13. p. 13
Hex Bit Line Driver Circuit
Pre-charge
Gn_2
Gn_1
VDD SF_bias - Vt
Driver Sequence
BL_PGM
BL_PGM
LVL_MUX
VPPD01_1in
LVL_01
LVL_00
VPPD_1_2
VPPD01_2in
VPPD00_1in
VPPD00_2in
VPPD10_1in
VPPD10_2in
PS_BLOCK
LS
LS
LS
LS
LS
LS
LVL_10
Drain_Charge_PumpSF_bias
Pre-charge
Gn_1
Gn_2
VDD
14. p. 14
Parallel Program-Verify Principles
SA
Ref 10 Ref 00 Ref 01
SA SA
Array Data
SA
FF
latch
latch
latch
Verified DataMUX
Expected Data
Reference SAs
Bit Slice[255]
• All Program levels are verified simultaneously
• Based on the expected data, the correct Verify level is
selected
15. p. 15
• The QUAD NROM Basics & Challenges
• General Architecture
• Multi Level Parallel Program & Verify
• Read & Sensing Method
• Constant Current Erase Technique
• Summary
16. p. 16
Sensing Method & Read
• Sensing Method:
• Drain sensing – High Accuracy
• VDD driven sensing – Low Power
• All levels sensed at once – High Speed
• Read Challenges:
• Process parameters variations
• Virtual Ground array effects
• Data pattern dependencies
Read margin loss
17. p. 17
Drain Driver Circuit – Basic Concept
• N-bias defines the current (It) of the drain driver
• P-bias defines the voltage (VDR) of the drain driver
• The sensing current is: Iint = It – Icell
• T1 (NMOS) serves as a source follower, capable to supply all
its pipe current (even if high) without drop penalty
VDD
N-bias
P-bias
SEN_B
It
Iint = It - Icell
Icell
T1
T2
V-PRCH
PRCH_B
SADC-ref
VDR
CMI
18. p. 18
Sense Amplifier with Offset Cancellation
Operation :
1. Offset cancellation period: o1 & in1 are shorted
Left plate of C is at DC_Ref, o1 & in1 at inverter’s trip point
2. Initialization period: SA_IN & in are discharged to GND
in1 follows by C coupling to Vtrip_point – DC_Ref
3. NROM cell signal integration period: SA_IN integrates from GND
Outputs (o1& o2) will flip when SA_IN crosses DC_Ref
PRCH_B
CMI
SA Out
DC_ref
SEN_B Stabilization
OFC_EN Offset Cancellation
Sensing
SA_IN
OFC_EN
NBIAS
SA_IN_ON
OFC_EN_B
C
in in1
o1 o2
DC_Ref
CMI
19. p. 19
The Virtual Ground Pipe Effect
• Pipe current should be minimized!
• Achieved by a Proper Physical order sequence
Icell1 = Icell2, Ipipe1 > Ipipe2 (Different neighbors
state)
Isense1 < Isense2
I_sense1
Ipipe1 Icell1
I_sense2
Ipipe2 Icell2
Erase
Program
20. p. 20
Read Order Principles
• Reading all bits in slice by 4 steps Pre-defined Sequential order
• Stepping 2 cells at a time Drain MBL is maintained (Power)
• Drain side is facing the isolation and maintained till end of the slice
• MBL’s change is followed by a pre-charge phase
Keeps Drain diffusion Bit Lines at same potential in sensing
• Discharge the slice at the end, before next read cycle
same initial conditions
Step #1,2 (Right Bits)
Step #3,4 (Left Bits)
21. p. 21
• The QUAD NROM Basics & Challenges
• General Architecture
• Multi Level Parallel Program & Verify
• Read & Sensing Method
• Constant Current Erase Technique
• Summary
22. p. 22
Accessing the Array for Erase
• The challenge for fast erase
• Many cells to be Erased Too high current consumption
• The Erase mechanism - TEHH band to band
• Peak Erase current suppression is necessary for erase
parallelism
SELECT transistors area
ISOLATION
ISOLATION
ISOLATION
ISOLATION
ISOLATION
ISOLATION
ISOLATION
ISOLATION
SELECT transistors area
BL Driver BL Driver
23. p. 23
Constant Current Erase - Motivation
• Erase current characteristics
Peak current at the beginning of the erase pulse
• Maximum bit counts are limited by the Peak current
• Average current is lower than the maximum allowed-inefficient!
Current Vs. pulse time
0
0.5
1
1.5
2
2.5
3
3.5
4
0 0.05 0.1 0.15 0.2 0.25
Time [mS]
Current [mA]
t
v
Maximum active erase current allowed
Erase pulse
Average current
24. p. 24
Constant Current Erase - Technique
• Implement an erase pulse shape, that will enable the erasure of maximum
bit count, within the limitation of the erase active maximum current
• Bit Line erase voltage will be ramped to the target voltage level
• Charge Pump current is continuously monitored and the voltage ramp rate
adjusted, to prevent current from exceeding the specified limit
t
V Erase Pulse
Hold time
VPPD step sizeVPPD Initial
• Parameters for optimization: Bit count, target VPPD level, initial VPPD level
25. p. 25
Constant current Erase - Product Results
Charge
pump
Active
Current
EV
Figure 1
Figure 1:
VPPD target is increased
according to algorithm,
active current is following
the VPPD increment,
Charge pump is constant for
each erase pulse phase
Figure 2:
VPPD rises only when Active
current is lower than the
maximum current allowed
VPPD Active
Current
Figure 2
26. p. 26
• The QUAD NROM Basics & Challenges
• General Architecture
• Multi Level Parallel Program & Verify
• Read & Sensing Method
• Constant Current Erase Technique
• Summary
27. p. 27
8Gb Data Flash Features
• Technology 90nm NROM technology
• Cell size 0.036µm²/cell
• Die size 155mm²
• Page Size 4KB
• Power supply 2.7V ÷ 3.6V
• Read cycle 30ns
• Write cycle 30ns
• Page program speed >4.5MB/s
28. p. 28
NROM Quad 90nm 8Gb Summary
• Fast & Accurate Programming
• Two Phase Algorithm
• Parallel Program & Verify
• Constant Current Erase
• Sequential Read for Pipe Effect Cancellation
• Drain Sensing & Error Detection
Enhanced Write
Performance
Reliability
