current conduction in a semiconductor is explained. Drift and diffusion mechnisms were discussed. Mass action law and electrical neutrality is explained
The presentation explains working of pn junction diode, V-I characteristics, breakdown mechanism, ac and dc resistance, diode capacitance, effect of temperature and equivalent circuit. It also covers special diodes, LED, Varicap diodes, Tunnel diode, and working of LCD
The presentation explains working of pn junction diode, V-I characteristics, breakdown mechanism, ac and dc resistance, diode capacitance, effect of temperature and equivalent circuit. It also covers special diodes, LED, Varicap diodes, Tunnel diode, and working of LCD
Energy bands formation in silicon is explained. Materials were classified in terms of energy band gap. Expression for Mobility and conductivity of a metal is derived
Wireless power transmission via resonance coupling.Xûbåįr Kakar
this slides give you idea about the recent research on Wireless power transmission.
compiled by Muhammad Xubair (BS-Electronic engg) at BUITEMS Quetta Pakistan.
A tunnel diode or Esaki diode is a type of semiconductor that is capable of very fast operation, well into the microwave frequency region, made possible by the use of the quantum mechanical effect called tunneling.
It was invented in August 1957 by Leo Esaki when he was with Tokyo Tsushin Kogyo, now known as Sony. In 1973 he received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes. Robert Noyce independently came up with the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it.[1]
These diodes have a heavily doped p–n junction only some 10 nm (100 Å) wide. The heavy doping results in a broken bandgap, where conduction band electron states on the n-side are more or less aligned with valence band hole states on the p-side
Tunnel diodes were first manufactured by Sony in 1957[2] followed by General Electric and other companies from about 1960, and are still made in low volume today.[3] Tunnel diodes are usually made from germanium, but can also be made from gallium arsenide and silicon materials. They are used in frequency converters and detectors.[4] They have negative differential resistance in part of their operating range, and therefore are also used as oscillators, amplifiers, and in switching circuits using hysteresis.
Figure 6: 8–12 GHz tunnel diode amplifier, circa 1970
In 1977, the Intelsat V satellite receiver used a microstrip tunnel diode amplifier (TDA) front-end in the 14 to 15.5 GHz band. Such amplifiers were considered state-of-the-art, with better performance at high frequencies than any transistor-based front end.[5]
The highest frequency room-temperature solid-state oscillators are based on the resonant-tunneling diode (RTD).[6]
There is another type of tunnel diode called a metal–insulator–metal (MIM) diode, but present application appears restricted to research environments due to inherent sensitivities.[7] There is also a metal–insulator–insulator–metal MIIM diode which has an additional insulator layer. The additional insulator layer allows "step tunneling" for precise diode control.[8]
Semiconductors: Crystalline material: Mechanical properties, Energy band theory, Fermi levels; Conductors, Semiconductors & Insulators: electrical properties, band diagrams. Semiconductors: intrinsic & extrinsic, energy band diagram, P&N-type semiconductors, drift & diffusion carriers.
Diodes and Diode Circuits: Formation of P-N junction, energy band diagram, built-in-potential, forward and reverse biased P-N junction, formation of depletion zone, V-I characteristics, Zener breakdown, Avalanche breakdown and its reverse characteristics; Junction capacitance and Varactor diode. Simple diode circuits, load line, linear piecewise model; Rectifier circuits: half wave, full wave, PIV, DC voltage and current, ripple factor, efficiency, idea of regulation.
Introduction
Semiconductor is a solid substance that has conductivity between that of an insulator and that of most metals, either due to the addition of an impurity or because of temperature effects. Devices made of semiconductors, notably silicon, are essential components of most electronic circuits.
Examples: Silicon, Germanium, Carbon
Intrinsic & Extrinsic Semiconductor
Semiconductors are mainly classified into two categories: Intrinsic and Extrinsic. An intrinsic semiconductor material is chemically very pure and possesses poor conductivity. It has equal numbers of negative carriers (electrons) and positive carriers (holes). Where as an extrinsic semiconductor is an improved intrinsic semiconductor with a small amount of impurities added.
The Doping of Semiconductors
The addition of a small percentage of foreign atoms in the regular crystal lattice of silicon or germanium produces dramatic changes in their electrical properties, producing n-type and p-type semiconductors.
Pentavalent impurities
Impurity atoms with 5 valence electrons produce n-type semiconductors by contributing extra electrons.
Trivalent impurities
Impurity atoms with 3 valence electrons produce p-type semiconductors by producing a "hole" or electron deficiency.
N-Type Semiconductor
The addition of pentavalent impurities such as antimony, arsenic or phosphorous contributes free electrons, greatly increasing the conductivity of the intrinsic semiconductor. Phosphorous may be added by diffusion of phosphine gas (PH3).
P-Type Semiconductor
The addition of trivalent impurities such as boron, aluminum or gallium to an intrinsic semiconductor creates deficiencies of valence electrons,called "holes". It is typical to use B2H6 diborane gas to diffuse boron into the silicon material.
Diodes
A device that blocks current in one direction while letting current flow in another direction is called a diode. Diodes can be used in a number of ways. For example, a device that uses batteries often contains a diode that protects the device if you insert the batteries backward. The diode simply blocks any current from leaving the battery if it is reversed -- this protects the sensitive electronics in the device.
Electronics and Communication Engineering is the Branch of Engineering. Electronics and Communication Engineering field requires an understanding of core areas including Engineering Graphics, Computer Programming,Electronics Devices and Circuits-I, Network Analysis, Signals and Systems, Communication Systems, Electromagnetics Engineering, Digital Signal Processing, Embedded Systems, Microprocessor and Computer Architecture. Ekeeda offers Online Mechanical Engineering Courses for all the Subjects as per the Syllabus. Visit : https://ekeeda.com/streamdetails/stream/Electronics-and-Communication-Engineering
Mobile communications is one of the communications fields that develop rapidly and energetically. The antenna builds the bridge between user terminals and base control devices. It is widely used in the mobile communications and the wireless access communication system. The rapid development of the antenna greatly promotes its technology innovation.
It is important to deeply grasp the knowledge of the antenna, which is useful to:
Install and maintain products.
Promote the network planning.
Chapter 1 Working Principle
Chapter 2 Classification
Chapter 3 Electrical Index
Chapter 4 Mechanical Index
When the conducting cable carries the alternating current, the electromagnetic wave radiation can be formed.
If two conducting cables are close, the directions of their current are opposite, and the electromotive force is counteracted. Thus the radiation becomes week.
If two conducting cables are open, the directions of their current are the same. Thus the radiation becomes strong.
When the length of the conducting cable is like the wavelength, the current on the cable will be enhanced. Thus the radiation becomes strong.
The straight conducting cable which can generate the strong radiation is called the dipole.
The pole whose two arms are of the same length (1/4 Wavelength) is called as dipole or half-wave-length dipole.
Energy bands formation in silicon is explained. Materials were classified in terms of energy band gap. Expression for Mobility and conductivity of a metal is derived
Wireless power transmission via resonance coupling.Xûbåįr Kakar
this slides give you idea about the recent research on Wireless power transmission.
compiled by Muhammad Xubair (BS-Electronic engg) at BUITEMS Quetta Pakistan.
A tunnel diode or Esaki diode is a type of semiconductor that is capable of very fast operation, well into the microwave frequency region, made possible by the use of the quantum mechanical effect called tunneling.
It was invented in August 1957 by Leo Esaki when he was with Tokyo Tsushin Kogyo, now known as Sony. In 1973 he received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes. Robert Noyce independently came up with the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it.[1]
These diodes have a heavily doped p–n junction only some 10 nm (100 Å) wide. The heavy doping results in a broken bandgap, where conduction band electron states on the n-side are more or less aligned with valence band hole states on the p-side
Tunnel diodes were first manufactured by Sony in 1957[2] followed by General Electric and other companies from about 1960, and are still made in low volume today.[3] Tunnel diodes are usually made from germanium, but can also be made from gallium arsenide and silicon materials. They are used in frequency converters and detectors.[4] They have negative differential resistance in part of their operating range, and therefore are also used as oscillators, amplifiers, and in switching circuits using hysteresis.
Figure 6: 8–12 GHz tunnel diode amplifier, circa 1970
In 1977, the Intelsat V satellite receiver used a microstrip tunnel diode amplifier (TDA) front-end in the 14 to 15.5 GHz band. Such amplifiers were considered state-of-the-art, with better performance at high frequencies than any transistor-based front end.[5]
The highest frequency room-temperature solid-state oscillators are based on the resonant-tunneling diode (RTD).[6]
There is another type of tunnel diode called a metal–insulator–metal (MIM) diode, but present application appears restricted to research environments due to inherent sensitivities.[7] There is also a metal–insulator–insulator–metal MIIM diode which has an additional insulator layer. The additional insulator layer allows "step tunneling" for precise diode control.[8]
Semiconductors: Crystalline material: Mechanical properties, Energy band theory, Fermi levels; Conductors, Semiconductors & Insulators: electrical properties, band diagrams. Semiconductors: intrinsic & extrinsic, energy band diagram, P&N-type semiconductors, drift & diffusion carriers.
Diodes and Diode Circuits: Formation of P-N junction, energy band diagram, built-in-potential, forward and reverse biased P-N junction, formation of depletion zone, V-I characteristics, Zener breakdown, Avalanche breakdown and its reverse characteristics; Junction capacitance and Varactor diode. Simple diode circuits, load line, linear piecewise model; Rectifier circuits: half wave, full wave, PIV, DC voltage and current, ripple factor, efficiency, idea of regulation.
Introduction
Semiconductor is a solid substance that has conductivity between that of an insulator and that of most metals, either due to the addition of an impurity or because of temperature effects. Devices made of semiconductors, notably silicon, are essential components of most electronic circuits.
Examples: Silicon, Germanium, Carbon
Intrinsic & Extrinsic Semiconductor
Semiconductors are mainly classified into two categories: Intrinsic and Extrinsic. An intrinsic semiconductor material is chemically very pure and possesses poor conductivity. It has equal numbers of negative carriers (electrons) and positive carriers (holes). Where as an extrinsic semiconductor is an improved intrinsic semiconductor with a small amount of impurities added.
The Doping of Semiconductors
The addition of a small percentage of foreign atoms in the regular crystal lattice of silicon or germanium produces dramatic changes in their electrical properties, producing n-type and p-type semiconductors.
Pentavalent impurities
Impurity atoms with 5 valence electrons produce n-type semiconductors by contributing extra electrons.
Trivalent impurities
Impurity atoms with 3 valence electrons produce p-type semiconductors by producing a "hole" or electron deficiency.
N-Type Semiconductor
The addition of pentavalent impurities such as antimony, arsenic or phosphorous contributes free electrons, greatly increasing the conductivity of the intrinsic semiconductor. Phosphorous may be added by diffusion of phosphine gas (PH3).
P-Type Semiconductor
The addition of trivalent impurities such as boron, aluminum or gallium to an intrinsic semiconductor creates deficiencies of valence electrons,called "holes". It is typical to use B2H6 diborane gas to diffuse boron into the silicon material.
Diodes
A device that blocks current in one direction while letting current flow in another direction is called a diode. Diodes can be used in a number of ways. For example, a device that uses batteries often contains a diode that protects the device if you insert the batteries backward. The diode simply blocks any current from leaving the battery if it is reversed -- this protects the sensitive electronics in the device.
Electronics and Communication Engineering is the Branch of Engineering. Electronics and Communication Engineering field requires an understanding of core areas including Engineering Graphics, Computer Programming,Electronics Devices and Circuits-I, Network Analysis, Signals and Systems, Communication Systems, Electromagnetics Engineering, Digital Signal Processing, Embedded Systems, Microprocessor and Computer Architecture. Ekeeda offers Online Mechanical Engineering Courses for all the Subjects as per the Syllabus. Visit : https://ekeeda.com/streamdetails/stream/Electronics-and-Communication-Engineering
Mobile communications is one of the communications fields that develop rapidly and energetically. The antenna builds the bridge between user terminals and base control devices. It is widely used in the mobile communications and the wireless access communication system. The rapid development of the antenna greatly promotes its technology innovation.
It is important to deeply grasp the knowledge of the antenna, which is useful to:
Install and maintain products.
Promote the network planning.
Chapter 1 Working Principle
Chapter 2 Classification
Chapter 3 Electrical Index
Chapter 4 Mechanical Index
When the conducting cable carries the alternating current, the electromagnetic wave radiation can be formed.
If two conducting cables are close, the directions of their current are opposite, and the electromotive force is counteracted. Thus the radiation becomes week.
If two conducting cables are open, the directions of their current are the same. Thus the radiation becomes strong.
When the length of the conducting cable is like the wavelength, the current on the cable will be enhanced. Thus the radiation becomes strong.
The straight conducting cable which can generate the strong radiation is called the dipole.
The pole whose two arms are of the same length (1/4 Wavelength) is called as dipole or half-wave-length dipole.
Similar to UNIT-I_Carrier_transport_Mass_action_law.ppt (20)
Using recycled concrete aggregates (RCA) for pavements is crucial to achieving sustainability. Implementing RCA for new pavement can minimize carbon footprint, conserve natural resources, reduce harmful emissions, and lower life cycle costs. Compared to natural aggregate (NA), RCA pavement has fewer comprehensive studies and sustainability assessments.
CW RADAR, FMCW RADAR, FMCW ALTIMETER, AND THEIR PARAMETERSveerababupersonal22
It consists of cw radar and fmcw radar ,range measurement,if amplifier and fmcw altimeterThe CW radar operates using continuous wave transmission, while the FMCW radar employs frequency-modulated continuous wave technology. Range measurement is a crucial aspect of radar systems, providing information about the distance to a target. The IF amplifier plays a key role in signal processing, amplifying intermediate frequency signals for further analysis. The FMCW altimeter utilizes frequency-modulated continuous wave technology to accurately measure altitude above a reference point.
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
NUMERICAL SIMULATIONS OF HEAT AND MASS TRANSFER IN CONDENSING HEAT EXCHANGERS...ssuser7dcef0
Power plants release a large amount of water vapor into the
atmosphere through the stack. The flue gas can be a potential
source for obtaining much needed cooling water for a power
plant. If a power plant could recover and reuse a portion of this
moisture, it could reduce its total cooling water intake
requirement. One of the most practical way to recover water
from flue gas is to use a condensing heat exchanger. The power
plant could also recover latent heat due to condensation as well
as sensible heat due to lowering the flue gas exit temperature.
Additionally, harmful acids released from the stack can be
reduced in a condensing heat exchanger by acid condensation. reduced in a condensing heat exchanger by acid condensation.
Condensation of vapors in flue gas is a complicated
phenomenon since heat and mass transfer of water vapor and
various acids simultaneously occur in the presence of noncondensable
gases such as nitrogen and oxygen. Design of a
condenser depends on the knowledge and understanding of the
heat and mass transfer processes. A computer program for
numerical simulations of water (H2O) and sulfuric acid (H2SO4)
condensation in a flue gas condensing heat exchanger was
developed using MATLAB. Governing equations based on
mass and energy balances for the system were derived to
predict variables such as flue gas exit temperature, cooling
water outlet temperature, mole fraction and condensation rates
of water and sulfuric acid vapors. The equations were solved
using an iterative solution technique with calculations of heat
and mass transfer coefficients and physical properties.
Cosmetic shop management system project report.pdfKamal Acharya
Buying new cosmetic products is difficult. It can even be scary for those who have sensitive skin and are prone to skin trouble. The information needed to alleviate this problem is on the back of each product, but it's thought to interpret those ingredient lists unless you have a background in chemistry.
Instead of buying and hoping for the best, we can use data science to help us predict which products may be good fits for us. It includes various function programs to do the above mentioned tasks.
Data file handling has been effectively used in the program.
The automated cosmetic shop management system should deal with the automation of general workflow and administration process of the shop. The main processes of the system focus on customer's request where the system is able to search the most appropriate products and deliver it to the customers. It should help the employees to quickly identify the list of cosmetic product that have reached the minimum quantity and also keep a track of expired date for each cosmetic product. It should help the employees to find the rack number in which the product is placed.It is also Faster and more efficient way.
Final project report on grocery store management system..pdfKamal Acharya
In today’s fast-changing business environment, it’s extremely important to be able to respond to client needs in the most effective and timely manner. If your customers wish to see your business online and have instant access to your products or services.
Online Grocery Store is an e-commerce website, which retails various grocery products. This project allows viewing various products available enables registered users to purchase desired products instantly using Paytm, UPI payment processor (Instant Pay) and also can place order by using Cash on Delivery (Pay Later) option. This project provides an easy access to Administrators and Managers to view orders placed using Pay Later and Instant Pay options.
In order to develop an e-commerce website, a number of Technologies must be studied and understood. These include multi-tiered architecture, server and client-side scripting techniques, implementation technologies, programming language (such as PHP, HTML, CSS, JavaScript) and MySQL relational databases. This is a project with the objective to develop a basic website where a consumer is provided with a shopping cart website and also to know about the technologies used to develop such a website.
This document will discuss each of the underlying technologies to create and implement an e- commerce website.
Industrial Training at Shahjalal Fertilizer Company Limited (SFCL)MdTanvirMahtab2
This presentation is about the working procedure of Shahjalal Fertilizer Company Limited (SFCL). A Govt. owned Company of Bangladesh Chemical Industries Corporation under Ministry of Industries.
Student information management system project report ii.pdfKamal Acharya
Our project explains about the student management. This project mainly explains the various actions related to student details. This project shows some ease in adding, editing and deleting the student details. It also provides a less time consuming process for viewing, adding, editing and deleting the marks of the students.
NO1 Uk best vashikaran specialist in delhi vashikaran baba near me online vas...Amil Baba Dawood bangali
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1. ANIL NEERUKONDA INSTITUTE OF TECHNOLOGY &
SCIENCES(A)
Department of Electronics and Communication Engineering
ECE 125 Basic Electronics Engineering
Academic year : 2022-23
Class & Section : 1/4 ECE-A
Name of the Faculty : Mr.D.Anil Prasad
ANIL PRASAD DADI/ECE/ANITS
2. UNIT-I(Semiconductor Diodes)
• Fermi level in Intrinsic & Extrinsic semiconductors. Mass-Action law.
Mobility and conductivity, Hall effect, Generation and recombination
of charges, Drift and diffusion current, Band structure of open-circuit
p-n junction, V-I characteristics, transition and diffusion capacitance,
reverse recovery time, Avalanche and zener breakdown, zener
diodes, Light Emitting Diodes.
ANIL PRASAD DADI/ECE/ANITS
3. Contents
• Carrier Transport
– Drift mechanism
– Diffusion mechanism
• Mass Action law
• Electrical Neutrality condition
ANIL PRASAD DADI/ECE/ANITS
4. Drift mechanism
• The process by which charge carriers move is called transport.
• Carrier Drift: When a charge carrier moves due to electric field, E
then it is said to be drifting.
ANIL PRASAD DADI/ECE/ANITS
• An electric field applied to a
semiconductor will produce a
force on electron and hole so
that they will experience a net
acceleration and net movement
provided there are available
energy states in the CB and VB.
5. Drift mechanism
• This net movement of charge due to an electric field is called drift.
The net drift of charge gives rise to a drift current.
ANIL PRASAD DADI/ECE/ANITS
• Electric field is constant through
out the material. Voltage, V
along the entire semiconductor
is going to reduce slowly i.e
V,V/2, 3V/2 ….0.
15. Mass Action law
ANIL PRASAD DADI/ECE/ANITS
• Mass action law is not valid for degenerate semiconductors but valid
for non degenerate semiconductors
16. Electrical Neutrality condition
• It gives exact relationship among electron, hole, donar and acceptor
atom concentration if material is to remain electrically neutral.
ND+p=NA+n
ANIL PRASAD DADI/ECE/ANITS
21. References
ANIL PRASAD DADI/ECE/ANITS
• Robert L Boylestad, Electronic Devices And Circuit Theory, Prentice
Hall, seventh edition,2021
• Jacob Millman and Christos Halkias, Electronics Devices and
Circuits, Black edition, October,2017