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UNIT 5
MEMORIES
Characteristics of Memory Systems
Table: Key Characteristics of Computer Memory Systems
The Memory Hierarchy
• Typical Memory Hierarchy is illustrated in Figure
As one goes DOWN the hierarchy,
the following occur:
a. Decreasing cost per bit
b. Increasing capacity
c. Increasing access time
d. Decreasing frequency of access
of the memory by the processor
• Below Figure depicts the OPERATION of a MEMORY CELL
• Cell has three functional terminals capable of carrying an
electrical signal
– Select terminal -- selects a memory cell for a read or write operation
– Control terminal -- indicates read or write
• For writing,
– provides an electrical signal that sets the state of the cell to 1 or 0
• For reading,
– terminal is used for output of the cell’s state
Figure: Memory Cell Operation
DRAM and SRAM
• Below Table lists the MAJOR TYPES OF SEMICONDUCTOR
MEMORY
• Most Semi conductor memories are RAMs
– Read and write new data to and from memory easily and rapidly
– RAM is volatile
– Thus, RAM can be used only as temporary storage.
• Two forms of RAM are DRAM and SRAM
Memory is primarily of three types −
Cache Memory
Primary Memory/Main Memory
Secondary Memory
SRAM vs DRAM
• Both static and dynamic RAMs are volatile
• A Dynamic memory cell is simpler and smaller than a Static memory cell
Thus, a DRAM is
– more DENSE (smaller cells = more cells per unit area)
– and less expensive
• DRAM requires the supporting refresh circuitry
For larger memories,
– the fixed cost of the refresh circuitry is more than compensated for by the
smaller variable cost of DRAM cells
– Thus, DRAMs tend to be favoured for large memory requirements
• SRAMs are faster than DRAMs
• SRAM is used for CACHE MEMORY (both on and off chip),
• DRAM is used for MAIN MEMORY
Write Operation
1) BL= i/p
2) WL= 1
3) BL= 1; Cs= Vdd (Charging)
4) BL= 0; Cs= 0 (Discharging)
ROM Design
ROM Size:
No. of i/p= n
Size of each address/word size= m
Eg. n=4, m=4
16x4=64 bits= (64/8)bytes= 8bytes
ROM Structure:
1) Decoder+ Programmable OR gates
2) AND Gates (fixed)+ Programable
OR gates
ROM Design
Storage
device/memory in
which Fixed set of
binary data are
stored
Design a combinational circuit using ROM. The circuit accept a 3-bit
number and outputs a binary number equal to the square of the input
number.
Design a combinational circuit using ROM. The circuit accept a 3-bit number
and outputs a binary number equal to the square of the input number.
UNIT 5 MEMORY.pdf
UNIT 5 MEMORY.pdf
UNIT 5 MEMORY.pdf

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UNIT 5 MEMORY.pdf

  • 2. Characteristics of Memory Systems Table: Key Characteristics of Computer Memory Systems
  • 3. The Memory Hierarchy • Typical Memory Hierarchy is illustrated in Figure As one goes DOWN the hierarchy, the following occur: a. Decreasing cost per bit b. Increasing capacity c. Increasing access time d. Decreasing frequency of access of the memory by the processor
  • 4. • Below Figure depicts the OPERATION of a MEMORY CELL • Cell has three functional terminals capable of carrying an electrical signal – Select terminal -- selects a memory cell for a read or write operation – Control terminal -- indicates read or write • For writing, – provides an electrical signal that sets the state of the cell to 1 or 0 • For reading, – terminal is used for output of the cell’s state Figure: Memory Cell Operation
  • 5. DRAM and SRAM • Below Table lists the MAJOR TYPES OF SEMICONDUCTOR MEMORY • Most Semi conductor memories are RAMs – Read and write new data to and from memory easily and rapidly – RAM is volatile – Thus, RAM can be used only as temporary storage. • Two forms of RAM are DRAM and SRAM
  • 6. Memory is primarily of three types − Cache Memory Primary Memory/Main Memory Secondary Memory
  • 7.
  • 8.
  • 9.
  • 10.
  • 11.
  • 12.
  • 13.
  • 14. SRAM vs DRAM • Both static and dynamic RAMs are volatile • A Dynamic memory cell is simpler and smaller than a Static memory cell Thus, a DRAM is – more DENSE (smaller cells = more cells per unit area) – and less expensive • DRAM requires the supporting refresh circuitry For larger memories, – the fixed cost of the refresh circuitry is more than compensated for by the smaller variable cost of DRAM cells – Thus, DRAMs tend to be favoured for large memory requirements • SRAMs are faster than DRAMs • SRAM is used for CACHE MEMORY (both on and off chip), • DRAM is used for MAIN MEMORY
  • 15.
  • 16. Write Operation 1) BL= i/p 2) WL= 1 3) BL= 1; Cs= Vdd (Charging) 4) BL= 0; Cs= 0 (Discharging)
  • 17.
  • 18.
  • 19.
  • 20.
  • 21.
  • 22.
  • 23.
  • 24.
  • 25.
  • 26. ROM Design ROM Size: No. of i/p= n Size of each address/word size= m Eg. n=4, m=4 16x4=64 bits= (64/8)bytes= 8bytes ROM Structure: 1) Decoder+ Programmable OR gates 2) AND Gates (fixed)+ Programable OR gates
  • 27.
  • 28. ROM Design Storage device/memory in which Fixed set of binary data are stored
  • 29.
  • 30. Design a combinational circuit using ROM. The circuit accept a 3-bit number and outputs a binary number equal to the square of the input number.
  • 31. Design a combinational circuit using ROM. The circuit accept a 3-bit number and outputs a binary number equal to the square of the input number.