The document provides specifications for several electronic components: - The BSS13 MOSFET has low RDS(ON) of 3.5-6.0 ohms and is compact in a SOT-23 package. - The J210 diode has fast response time under 1 ps, low leakage current under 1uA, and flame-retardant plastic packaging. - The BU406 transistor has absolute maximum ratings including collector-emitter voltage of 400V and collector current of 7A. - The 2N700 transistor also has maximum collector current ratings of 10A and 15A depending on pulse duration. - The IRF510 MOSFET has typical specifications including breakdown voltage

2. BSS13
• 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 V
RDS(ON) = 6.0Ω @ VGS = 4.5 V
• High density cell design for extremely low RDS(ON)
• Rugged and Reliable
• Compact industry standard SOT-23 surface mount
J210
• For surface mounted applications in order to optimize board space.
• Low profile package
• Built-in strain relief
• Glass passivated junction
• Excellent clamping capability
• Low inductance
• Fast response time: typically less than 1.0 ps from 0 volts to BV min
• Typical IR less than 1µA above 10V
• High temperature soldering : 250°C/10 seconds a
t t e r m i n a l s .• P l a s t i c p a c k a g e h a s U n d e r w r i t e r s L a b
o r a t o r y F l a m m a b i l i t y Classification 94V-O

3. BU406
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 400 V
VCEV Collector-Emitter Voltage (VBE = -1.5 V)
400 V
VCEO Collector-Emitter Voltage (IB = 0) 200 V
VEBO Emitter-Base Voltage (IC = 0) 6 V
IC Collector Current 7 A

4. 2N700
ICM Collector Peak Current (repetitive) 10 A
ICM Collector Peak Current (tp < 10 ms) 15 A
IB Base Current 4 A
Ptot Total Dissipation at Tc £ 25 oC 60 W
Tstg Storage Temperature -65 to 150 oC
Tj Max. Operating Junction Temperature 150 oC
¼
ymbol Parameter Min Typ Max Unit Conditions
BVDSS
Drain-to-Source Breakdown Voltage 60 V ID
= -10µA, VGS
= 0V
VGS(th) Gate Threshold Voltage 1 2.5 V VGS
= VDS
, ID
= 250µA

5. IGSS Gate Body Leakage 100 nA VGS
= ±30V, VDS
= 0V
IDSS
Zero Gate Voltage Drain Current 1 µA VGS
= 0V, VDS
= 50V
500 µA VGS
= 0V, VDS
= 50V
TA
= 125°C
ID(ON) ON-State Drain Current 500 mA VGS
= 10V, VDS
≥ 2VDS(ON)
RDS(ON)
Static Drain-to-Source ON-State Resistance 7.5 VGS
= 5V, ID
= 50mA
7.5 VGS
= 10V, ID
= 500mA
GFS
Forward Transconductance 80 m VDS

6. = 10V, ID
= 0.2A
CISS
Input Capacitance 50
COSS
Common Source Output Capacitance 25 pF
CRSS
Reverse Transfer Capacitance 5
t
(ON)
Turn-ON Time 20
t
(OFF)
Turn-OFF Time 20
VSD
Diode Forward Voltage Drop 1.5 V ISD
= 150mA, VGS
= 0V
Notes:
All D.C. parameters 100% tested at 2

7. MMBT2484
CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
60 —
Vdc
Collector – Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
60 —
Vdc

8. Emitter – Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0 —
Vdc
Collector Cutoff Current
(VCB = 45 Vdc, IE = 0)
(VCB = 45 Vdc, IE = 0, TA = 150°C)
ICBO
—
—
10
10
nAdc
µAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
— 10
nAdc