1. The document discusses optimizing the growth conditions for monolayer tungsten disulfide (WS2) using chemical vapor deposition (CVD). 2. Experiments were conducted varying the weight of WO3 precursor, carrier gas flow rate of argon, and reaction time to determine the optimal conditions for high quality monolayer WS2 growth. 3. The best results were obtained with 20mg of WO3, 200mg of S2, 850°C temperature, 150 sccm argon gas flow rate, and 15 minute reaction time, yielding 40 micron WS2 with a band gap of 1.97eV.