The document describes a 600V/16A silicon diode (SBD2) from manufacturer Honda: - It has a forward voltage (Von) of -1.4V at 12A and a reverse voltage rating (Vr) of -600V. - The SPICE model parameters and equations for the diode are provided. - Several circuit simulations are shown to characterize the diode's current-voltage, capacitance-voltage, reverse recovery time, and reverse leakage current relationships.

1. SBD2 (600V/16A)
Von: -1.4V @ 12 A
Vr: -600 V

2. SBD2.sp
* PART NUMBER: SBD2
* MANUFACTURER: HONDA
* VRRM=600V, IF(AV)=16A
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
.SUBCKT SBD2 A K
G2 A K CUR='V(IFW)-0.001*V(Irv)'
H2 IFW 0 VH2 1
VH2 N3 0 0
D1 N2 N3 DSBD2
E2 N2 0 N1 0 1
G1 0 N1 CUR='(V(A,K)>0)*V(A,K)'
R3 N1 0 1
G3 0 N4 CUR='(V(A,K)<=0)*V(A,K)'
R4 N4 0 1
E1 Vrv 0 N4 0 1
D2 Vrv N5 DSBD2
H1 rv1 0 VH1 1
VH1 0 N5 0
G6 0 Irv CUR='V(small)*V(IRV0)+1000*V(rv1)'
R9 Irv 0 1
G5 0 small CUR='(V(A,K)<=-50)'
R8 small 0 1
G7 0 IRV0 POLY(1) 0 VRV 1.6042e-8 -5.215e-10
+ 6.8488e-12 -2.8856e-14 4.7149e-17
R7 IRV0 0 1000
.MODEL DSBD2 D
+ IS=330.95e-018 JSW=0 MULT=1
+ AFAC=1 PJFAC=1 RS=40.10e-3 N=1 TT=2e-9 CJ0=833.76e-12
+ CJP=0 VJ=1.6088 M=0.4398 MJSW=0.33 FC=0.5 FCS=0.5
+ BV=630 IBV=10e-006 IKF=1.0e3 IKR=0 EG=3.2 XTI=3 TEXT=25
+ T=25 KF=0 AF=1 FFE=1 KB=0 AB=1 FB=1 NFLAG=1 DCAP=0
+ TLEV=0 TLEVC=0 CTA=0 CTP=0 GAP1=0.000702 GAP2=1108
+ TCV=0 TM1=0 TM2=0 TPB=0 TPHP=0 TRS=0 TTT1=0 TTT2=0
+ COMPAT=1 TRS2=0 TGS=0 TGS2=0 CD=0
.ENDS

3. IV-VF Simulation circuit

4. IV-VF Simulation result

5. Ct Simulation circuit

6. Ct Simulation result

7. Trr Simulation circuit

8. Trr Simulation result

9. IR-VR Simulation circuit

10. IR-VR Simulation result