Device Modeling Report




COMPONENTS:PHOTOCOUPLER
PART NUMBER:PC356NT
MANUFACTURER: SHARP




              Bee Technologies Inc.


All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
DIODE MODEL
  Pspice model
                                          Model description
   Parameter
        IS         Saturation Current
        N          Emission Coefficient
       RS          Series Resistance
       IKF         High-injection Knee Current
      CJO          Zero-bias Junction Capacitance
        M          Junction Grading Coefficient
        VJ         Junction Potential
      ISR          Recombination Current Saturation Value
       BV          Reverse Breakdown Voltage(a positive value)
      IBV          Reverse Breakdown Current(a positive value)
        TT         Transit Time

BIPOLAR JUNCTION TRANSISTOR MODEL
  Pspice
   model                       Model description
 parameter
    NR     Reverse Emission Coefficient
    RB     Base Resistance
    RC     Series Collector Resistance
    CJE    Zero-bias Emitter-Base Junction Capacitance
    CJC    Zero-bias Collector-Base Junction Capacitance
    TF     Forward Transit Time
    TR     Reverse Transit Time

VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS)


E<Name><(+)Node><(-)Node>VALUE={Expression}

E<Name><(+)Node><(-)Node>TABLE={Expression}




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS)


E<Name><(+)Node><(-)Node>VALUE={Expression}


CURRENT CONTROLLED MODEL(W)
  Pspice
   model                        Model description
 parameter
   IOFF    Controlling current to Off state
    ION    Controlling current to On state
   ROFF    Off Resistance
   RON     On Resistance




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Input Device Forward Current Characteristics




                                                           Measurement
                                                           Simulation




Input Device Junction Capacitance Characteristics




                                                         Measurement
                                                         Simulation




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Input Device Reverse Recovery Characteristics




                                                   Measurement




trj=212n(s)
trb=200n(s)
Conditions:Ifwd=Irev=0.04(A),Rl=50



                                                        Example




                            Relation between trj and trb



              All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
LED IV Curve Characteristics

Evaluation Circuit




                                          U1
                                      1                 4
                                          A         C
                  I1                                                             V1
                                                                       2Vdc
               0Adc                   2                 3
                                          K         E
                                          PC356NT




              0                                                                  0




Simulation result




                         Simulation




                  All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Comparison Table

                                      Vfwd(V)
     Ifwd(A)                                                            % Error
                       Measurement             Simulation

      0.001                  1.05                   1.05                     0

      0.002                  1.09                 1.0859                 -0.376

      0.005                  1.14                 1.1366                 -0.298

      0.01                  1.185                 1.1822                 -0.236

      0.02                   1.24                 1.2409                 0.073

      0.05                   1.37                 1.3637                 -0.460




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Transistor Saturation Characteristics

Evaluation Circuit




                                       U1
                                   1                 4
                                       A         C

                   I1
                                   2                 3                       I2
                                       K         E
               20mAdc
                                       PC356NT
                                                            Simulation   1mAdc




               0                                                         0




Simulation result




                                                            Simulation




Comparison Table

                        Measurement                  Simulation          % Error
     Vce(sat) (V)           0.2                         0.2                 0

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
CTR(Current Transfer Ratio) Characteristics

Evaluation Circuit


                       V2                                        V3


                            0Vdc                                      0Vdc




                                             U1
                                         1                 4
                                             A         C                         V1
                  I1                                                    5Vdc

               20mAdc                    2                 3
                                             K         E
                                             PC356NT




              0                                                                  0




Simulation result




                            Simulation




                  All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Rise Curve     Table



                                     CTR(%)
      If(mA)                                                           % Error
                       Measurement            Simulation

         1                   180                182.194                 1.219

         2                   255                 247.54                 -2.925

         3                   295                285.627                 -3.177

         4                   325                312.588                 -3.819

         5                   345                333.459                 -3.345

         6                   350                350.481                 0.137

         7                   365                364.714                 -0.078



Fall Curve Table



                                     CTR(%)
      If(mA)                                                           % Error
                       Measurement            Simulation

         7                   365                364.714                 -0.078

         8                   350                341.227                 -2.507

        10                   310                305.071                 -1.590

        20                   200                194.510                 -2.745

        30                   130                129.686                 -0.242


             All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Switching Time Characteristics

Evaluation Circuit

                                  V2


                                       0Vdc



                                                                                       R1
                                                                                       100
                                                  U1
                                              1                 4
                                                  A         C
                             I1

            TD = 0                            2                 3
            TF = 10n                              K         E                      V1
            PW = 20u                                                        2Vdc
                                                  PC356NT
            PER = 500u
            I1 = 0
            I2 = 20m
            TR = 10n




                         0                                                         0



Simulation result



                                                                           Simulation




Comparison Table

Vcc=2V,IC=2mA,RL=100                   Measurement                 Simulation               % Error
          Ts (us)                           1.2                       1.2151                  1.258
          Tf (us)                            8                        8.1518                  1.898
                 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

SPICE MODEL of PC356NT in SPICE PARK

  • 1.
    Device Modeling Report COMPONENTS:PHOTOCOUPLER PARTNUMBER:PC356NT MANUFACTURER: SHARP Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 2.
    DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time BIPOLAR JUNCTION TRANSISTOR MODEL Pspice model Model description parameter NR Reverse Emission Coefficient RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance CJC Zero-bias Collector-Base Junction Capacitance TF Forward Transit Time TR Reverse Transit Time VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS) E<Name><(+)Node><(-)Node>VALUE={Expression} E<Name><(+)Node><(-)Node>TABLE={Expression} All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 3.
    VOLTAGE CONTROLLED CURRENTSOURCE MODEL(VCCS) E<Name><(+)Node><(-)Node>VALUE={Expression} CURRENT CONTROLLED MODEL(W) Pspice model Model description parameter IOFF Controlling current to Off state ION Controlling current to On state ROFF Off Resistance RON On Resistance All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 4.
    Input Device ForwardCurrent Characteristics Measurement Simulation Input Device Junction Capacitance Characteristics Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 5.
    Input Device ReverseRecovery Characteristics Measurement trj=212n(s) trb=200n(s) Conditions:Ifwd=Irev=0.04(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 6.
    LED IV CurveCharacteristics Evaluation Circuit U1 1 4 A C I1 V1 2Vdc 0Adc 2 3 K E PC356NT 0 0 Simulation result Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 7.
    Comparison Table Vfwd(V) Ifwd(A) % Error Measurement Simulation 0.001 1.05 1.05 0 0.002 1.09 1.0859 -0.376 0.005 1.14 1.1366 -0.298 0.01 1.185 1.1822 -0.236 0.02 1.24 1.2409 0.073 0.05 1.37 1.3637 -0.460 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 8.
    Transistor Saturation Characteristics EvaluationCircuit U1 1 4 A C I1 2 3 I2 K E 20mAdc PC356NT Simulation 1mAdc 0 0 Simulation result Simulation Comparison Table Measurement Simulation % Error Vce(sat) (V) 0.2 0.2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 9.
    CTR(Current Transfer Ratio)Characteristics Evaluation Circuit V2 V3 0Vdc 0Vdc U1 1 4 A C V1 I1 5Vdc 20mAdc 2 3 K E PC356NT 0 0 Simulation result Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 10.
    Rise Curve Table CTR(%) If(mA) % Error Measurement Simulation 1 180 182.194 1.219 2 255 247.54 -2.925 3 295 285.627 -3.177 4 325 312.588 -3.819 5 345 333.459 -3.345 6 350 350.481 0.137 7 365 364.714 -0.078 Fall Curve Table CTR(%) If(mA) % Error Measurement Simulation 7 365 364.714 -0.078 8 350 341.227 -2.507 10 310 305.071 -1.590 20 200 194.510 -2.745 30 130 129.686 -0.242 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 11.
    Switching Time Characteristics EvaluationCircuit V2 0Vdc R1 100 U1 1 4 A C I1 TD = 0 2 3 TF = 10n K E V1 PW = 20u 2Vdc PC356NT PER = 500u I1 = 0 I2 = 20m TR = 10n 0 0 Simulation result Simulation Comparison Table Vcc=2V,IC=2mA,RL=100 Measurement Simulation % Error Ts (us) 1.2 1.2151 1.258 Tf (us) 8 8.1518 1.898 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004