Original N-Channel Mosfet STP65NF06 P65NF06 65A 60V TO-220 New ST
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Original N-Channel Mosfet STN2NF10 2NF10 N2NF10 2.4A 100V SOT-223 New STMicro...AUTHELECTRONIC
This document provides specifications for the STN2NF10 N-channel 100V MOSFET from STMicroelectronics. Key details include:
- The MOSFET has an on-resistance of 0.23Ω maximum and can handle continuous drain currents up to 2.4A.
- Electrical characteristics and ratings are provided in tables, along with test circuits and package mechanical data.
- Revision history shows the document was last updated in April 2007 with minor changes to figures and test conditions.
Original N-Channel Mosfet STS4DNF60L 4DF60L 60V 4A SOP-8 New STMicroelectronicsAUTHELECTRONIC
This document provides information on an N-channel 60V power MOSFET from STMicroelectronics called the STS4DNF60L. It has a maximum drain-source voltage of 60V, on-resistance of less than 0.055 ohms, and continuous drain current of 4A. The document includes electrical ratings and characteristics, test circuits, package mechanical data, and a revision history.
Original MOSFET N-CHANNEL STP80NF70 80NF70 80N70 80A 70V New AUTHELECTRONIC
This document provides information on the STP80NF70 N-channel power MOSFET, including:
1. Electrical ratings and characteristics such as drain-source breakdown voltage, on-resistance, gate charge, and switching times.
2. Test circuits for evaluating electrical parameters.
3. Package mechanical data for the TO-220 package.
Original N-CHANNEL MOSFET STF40NF20 40NF20 40N20 40A 200V TO-220 New STAUTHELECTRONIC
Original N-CHANNEL MOSFET STF40NF20 40NF20 40N20 40A 200V TO-220 New ST
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Original N Channel Mosfet 110N8F6 STP110N8F6 110A 80V TO-220 NewAUTHELECTRONIC
This document provides product information for the STP110N8F6 power MOSFET, including:
1. Electrical ratings and characteristics such as maximum voltage, current, and on-resistance.
2. Test circuits for evaluating switching times and diode recovery.
3. Package information for the TO-220 package including mechanical dimensions.
Original N-Channel Mosfet STN2NF10 2NF10 N2NF10 2.4A 100V SOT-223 New STMicro...AUTHELECTRONIC
This document provides specifications for the STN2NF10 N-channel 100V MOSFET from STMicroelectronics. Key details include:
- The MOSFET has an on-resistance of 0.23Ω maximum and can handle continuous drain currents up to 2.4A.
- Electrical characteristics and ratings are provided in tables, along with test circuits and package mechanical data.
- Revision history shows the document was last updated in April 2007 with minor changes to figures and test conditions.
Original N-Channel Mosfet STS4DNF60L 4DF60L 60V 4A SOP-8 New STMicroelectronicsAUTHELECTRONIC
This document provides information on an N-channel 60V power MOSFET from STMicroelectronics called the STS4DNF60L. It has a maximum drain-source voltage of 60V, on-resistance of less than 0.055 ohms, and continuous drain current of 4A. The document includes electrical ratings and characteristics, test circuits, package mechanical data, and a revision history.
Original MOSFET N-CHANNEL STP80NF70 80NF70 80N70 80A 70V New AUTHELECTRONIC
This document provides information on the STP80NF70 N-channel power MOSFET, including:
1. Electrical ratings and characteristics such as drain-source breakdown voltage, on-resistance, gate charge, and switching times.
2. Test circuits for evaluating electrical parameters.
3. Package mechanical data for the TO-220 package.
Original N-CHANNEL MOSFET STF40NF20 40NF20 40N20 40A 200V TO-220 New STAUTHELECTRONIC
Original N-CHANNEL MOSFET STF40NF20 40NF20 40N20 40A 200V TO-220 New ST
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Original N Channel Mosfet 110N8F6 STP110N8F6 110A 80V TO-220 NewAUTHELECTRONIC
This document provides product information for the STP110N8F6 power MOSFET, including:
1. Electrical ratings and characteristics such as maximum voltage, current, and on-resistance.
2. Test circuits for evaluating switching times and diode recovery.
3. Package information for the TO-220 package including mechanical dimensions.
Original Switching Voltage Regulators Mosfet N TK40E10N1 K40E10 100V 40A TO-9...AUTHELECTRONIC
This document provides specifications for the TK40E10N1 MOSFET transistor. It includes:
1) Applications such as switching voltage regulators
2) Key features and specifications including low on-resistance, leakage current, enhancement mode voltage
3) Packaging and pinout information for the TO-220 package
4) Absolute maximum ratings and thermal/electrical characteristics
5) Testing and qualification information
Original N-Channel Mosfet DN2540 DN2540N5 2540 TO-220 New SupertexAUTHELECTRONIC
Original N-Channel Mosfet DN2540 DN2540N5 2540 TO-220 New Supertex
https://authelectronic.com/original-n-channel-mosfet-dn2540-dn2540n5-2540-to-220-new-supertex
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK ST...AUTHELECTRONIC
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK STF16N65M5 16N65M5 16N65 710V 12A TO-220FP New STMicroelectronics
https://authelectronic.com/original-n-channel-650-v-0-230-ohm-12-a-mdmesh-v-power-mosfet-in-dpak-dpak-stf16n65m5-16n65m5-16n65-710v-12a-to-220fp-new-stmicroelectronics
Original N-Channel Mosfet 7N65L-TF1-T UTC7N65L 7.4A 650V TO-263 New UTCAUTHELECTRONIC
The 7N65 power MOSFET from Unisonic Technologies is a high-voltage transistor designed for switching applications. It has a maximum voltage rating of 650V, continuous current rating of 7.4A, and features low on-resistance, fast switching times, and high ruggedness. The document provides detailed specifications, characteristics, test methods and typical performance curves for the device.
Original N-Channel Mosfet TK12A65D K12A65D 12A65 TO-220F New ToshibaAUTHELECTRONIC
Original N-Channel Mosfet TK12A65D K12A65D 12A65 TO-220F New Toshiba
https://authelectronic.com/original-n-channel-mosfet-tk12a65d-k12a65d-12a65-to-220f-new-toshiba
This document provides specifications for N-channel 60V power MOSFETs from STMicroelectronics. The MOSFETs have an on-resistance of 0.014 ohms and can handle drain currents up to 55A. Key parameters like breakdown voltage, leakage currents, switching times and safe operating area are specified. The document also includes application information, maximum ratings, package details and test circuit diagrams.
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...AUTHELECTRONIC
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 New ST
https://authelectronic.com/original-n-channel-mosfet-fqd10n60c-std10nm60n-10nm60-10n60-10a-600v-to-252-new-st
Original MOSFET N-Channel STGF10NC60KD GF10NC60KD 10NC60 10N60 10A 600V NewAUTHELECTRONIC
This document provides information on N-channel 600V-10A IGBTs from STMicroelectronics' PowerMESH product family. The IGBTs feature low saturation voltage, low CRES/CIES ratio to prevent cross-conduction, and a soft recovery diode. They are optimized for high frequency motor control applications and can withstand short circuits up to 10 microseconds. Electrical characteristics, switching performance curves, package details, and test circuits are included for the D2PAK, TO-220, and TO-220FP packaged devices.
This document provides specifications for TE Connectivity's slimline PCN and PCNH series general purpose low power PCB relays. The PCN relay has a 1 pole 5A normally open contact, operates at 120mW, and is only 5mm wide, allowing for high packing density. The PCNH has a single contact and higher performance 180mW coil. Both comply with RoHS and offer cadmium-free contacts. The document provides detailed contact, coil, insulation, mechanical, and other technical data for the relays.
Original Mosfet IRFB18N50KPBF IRFB18N50K FB18N50K 18N50K 500V 17A TO-220 New ...AUTHELECTRONIC
Original Mosfet IRFB18N50KPBF IRFB18N50K FB18N50K 18N50K 500V 17A TO-220 New International Rectifier
https://authelectronic.com/original-mosfet-irfb18n50kpbf-irfb18n50k-fb18n50k-18n50k-500v-17a-to-220-new-international-rectifier
This document provides specifications for the AO4468 30V N-Channel MOSFET. It has an extremely low RDS(ON) of less than 17mΩ at a gate-source voltage of 10V and less than 23mΩ at 4.5V. It is well-suited for applications requiring low resistance such as load switching and battery protection. The document includes maximum ratings, typical electrical and thermal characteristics, and test circuits and waveforms.
Original N-Channel IGBT RJH1CF7RDPQ RJH1CF7RDPQ-80 TO-247 New Renesasauthelectroniccom
This document provides preliminary datasheet information for the RJH1CF7RDPQ-80 silicon n-channel IGBT. Key specifications include a typical collector to emitter saturation voltage of 1.85V at 35A collector current and 15V gate to emitter voltage. Absolute maximum ratings include 1200V collector to emitter voltage, 60A collector current at 25°C case temperature, and 150°C maximum junction temperature. Electrical characteristics, main characteristics curves, switching time waveforms and package dimensions are also included.
This document provides information on a thyristor module called MCC132-14io1. It includes specifications, ratings, features, applications, packaging details, and diagrams. Some key details are:
- It is a thyristor module for line frequency rectification from 50/60 Hz applications such as softstart motor control, DC motor control, and AC power control.
- It has a repetitive blocking voltage of 1400V and can handle a maximum forward current of 300A.
- The module uses a planar passivated chip design for long-term stability and is mounted on a direct copper bonded Al2O3-ceramic substrate for heat dissipation.
- Electrical diagrams are provided showing
Original MOSFET P20NM60 20NM60 20N60C3 20N60 NewAUTHELECTRONIC
The document describes several power MOSFET devices. It provides key information on their electrical ratings and characteristics including:
- Maximum voltage, current, and power ratings.
- On-resistance, threshold voltage, capacitance values.
- Safe operating area curves and switching/recovery times.
- Package details for TO-220, D2PAK, TO-247, and TO-220FP packages.
Original N-channel 600 V 0.160 Ω 19 A PowerFLAT™ 8x8 HV ultra low gate charge...AUTHELECTRONIC
This document provides information on the STL26NM60N N-channel 600 V, 0.160 Ω, 19 A PowerFLATTM 8x8 HV ultra low gate charge MDmeshTM II Power MOSFET, including:
- Key features such as being 100% avalanche tested and having low input capacitance and gate charge
- Applications in switching applications
- Description of the proprietary vertical and horizontal process technologies used to achieve extremely low on-resistance
- Electrical ratings, characteristics and switching performance curves
- Package mechanical data for the PowerFLATTM 8x8 HV package
Original Switching Voltage Regulators Mosfet N TK40E10N1 K40E10 100V 40A TO-9...AUTHELECTRONIC
This document provides specifications for the TK40E10N1 MOSFET transistor. It includes:
1) Applications such as switching voltage regulators
2) Key features and specifications including low on-resistance, leakage current, enhancement mode voltage
3) Packaging and pinout information for the TO-220 package
4) Absolute maximum ratings and thermal/electrical characteristics
5) Testing and qualification information
Original N-Channel Mosfet DN2540 DN2540N5 2540 TO-220 New SupertexAUTHELECTRONIC
Original N-Channel Mosfet DN2540 DN2540N5 2540 TO-220 New Supertex
https://authelectronic.com/original-n-channel-mosfet-dn2540-dn2540n5-2540-to-220-new-supertex
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK ST...AUTHELECTRONIC
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK STF16N65M5 16N65M5 16N65 710V 12A TO-220FP New STMicroelectronics
https://authelectronic.com/original-n-channel-650-v-0-230-ohm-12-a-mdmesh-v-power-mosfet-in-dpak-dpak-stf16n65m5-16n65m5-16n65-710v-12a-to-220fp-new-stmicroelectronics
Original N-Channel Mosfet 7N65L-TF1-T UTC7N65L 7.4A 650V TO-263 New UTCAUTHELECTRONIC
The 7N65 power MOSFET from Unisonic Technologies is a high-voltage transistor designed for switching applications. It has a maximum voltage rating of 650V, continuous current rating of 7.4A, and features low on-resistance, fast switching times, and high ruggedness. The document provides detailed specifications, characteristics, test methods and typical performance curves for the device.
Original N-Channel Mosfet TK12A65D K12A65D 12A65 TO-220F New ToshibaAUTHELECTRONIC
Original N-Channel Mosfet TK12A65D K12A65D 12A65 TO-220F New Toshiba
https://authelectronic.com/original-n-channel-mosfet-tk12a65d-k12a65d-12a65-to-220f-new-toshiba
This document provides specifications for N-channel 60V power MOSFETs from STMicroelectronics. The MOSFETs have an on-resistance of 0.014 ohms and can handle drain currents up to 55A. Key parameters like breakdown voltage, leakage currents, switching times and safe operating area are specified. The document also includes application information, maximum ratings, package details and test circuit diagrams.
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...AUTHELECTRONIC
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 New ST
https://authelectronic.com/original-n-channel-mosfet-fqd10n60c-std10nm60n-10nm60-10n60-10a-600v-to-252-new-st
Original MOSFET N-Channel STGF10NC60KD GF10NC60KD 10NC60 10N60 10A 600V NewAUTHELECTRONIC
This document provides information on N-channel 600V-10A IGBTs from STMicroelectronics' PowerMESH product family. The IGBTs feature low saturation voltage, low CRES/CIES ratio to prevent cross-conduction, and a soft recovery diode. They are optimized for high frequency motor control applications and can withstand short circuits up to 10 microseconds. Electrical characteristics, switching performance curves, package details, and test circuits are included for the D2PAK, TO-220, and TO-220FP packaged devices.
This document provides specifications for TE Connectivity's slimline PCN and PCNH series general purpose low power PCB relays. The PCN relay has a 1 pole 5A normally open contact, operates at 120mW, and is only 5mm wide, allowing for high packing density. The PCNH has a single contact and higher performance 180mW coil. Both comply with RoHS and offer cadmium-free contacts. The document provides detailed contact, coil, insulation, mechanical, and other technical data for the relays.
Original Mosfet IRFB18N50KPBF IRFB18N50K FB18N50K 18N50K 500V 17A TO-220 New ...AUTHELECTRONIC
Original Mosfet IRFB18N50KPBF IRFB18N50K FB18N50K 18N50K 500V 17A TO-220 New International Rectifier
https://authelectronic.com/original-mosfet-irfb18n50kpbf-irfb18n50k-fb18n50k-18n50k-500v-17a-to-220-new-international-rectifier
This document provides specifications for the AO4468 30V N-Channel MOSFET. It has an extremely low RDS(ON) of less than 17mΩ at a gate-source voltage of 10V and less than 23mΩ at 4.5V. It is well-suited for applications requiring low resistance such as load switching and battery protection. The document includes maximum ratings, typical electrical and thermal characteristics, and test circuits and waveforms.
Original N-Channel IGBT RJH1CF7RDPQ RJH1CF7RDPQ-80 TO-247 New Renesasauthelectroniccom
This document provides preliminary datasheet information for the RJH1CF7RDPQ-80 silicon n-channel IGBT. Key specifications include a typical collector to emitter saturation voltage of 1.85V at 35A collector current and 15V gate to emitter voltage. Absolute maximum ratings include 1200V collector to emitter voltage, 60A collector current at 25°C case temperature, and 150°C maximum junction temperature. Electrical characteristics, main characteristics curves, switching time waveforms and package dimensions are also included.
This document provides information on a thyristor module called MCC132-14io1. It includes specifications, ratings, features, applications, packaging details, and diagrams. Some key details are:
- It is a thyristor module for line frequency rectification from 50/60 Hz applications such as softstart motor control, DC motor control, and AC power control.
- It has a repetitive blocking voltage of 1400V and can handle a maximum forward current of 300A.
- The module uses a planar passivated chip design for long-term stability and is mounted on a direct copper bonded Al2O3-ceramic substrate for heat dissipation.
- Electrical diagrams are provided showing
Original MOSFET P20NM60 20NM60 20N60C3 20N60 NewAUTHELECTRONIC
The document describes several power MOSFET devices. It provides key information on their electrical ratings and characteristics including:
- Maximum voltage, current, and power ratings.
- On-resistance, threshold voltage, capacitance values.
- Safe operating area curves and switching/recovery times.
- Package details for TO-220, D2PAK, TO-247, and TO-220FP packages.
Original N-channel 600 V 0.160 Ω 19 A PowerFLAT™ 8x8 HV ultra low gate charge...AUTHELECTRONIC
This document provides information on the STL26NM60N N-channel 600 V, 0.160 Ω, 19 A PowerFLATTM 8x8 HV ultra low gate charge MDmeshTM II Power MOSFET, including:
- Key features such as being 100% avalanche tested and having low input capacitance and gate charge
- Applications in switching applications
- Description of the proprietary vertical and horizontal process technologies used to achieve extremely low on-resistance
- Electrical ratings, characteristics and switching performance curves
- Package mechanical data for the PowerFLATTM 8x8 HV package
Original N-Channel Mosfet 2SK3484 3484 16A 100V TO-252 New Renesas ElectronicsAUTHELECTRONIC
This document provides specifications for the 2SK3484 N-channel MOS field effect transistor (MOSFET) including:
- Electrical characteristics such as on-state resistance, gate cut-off voltage, and input/output capacitances.
- Thermal characteristics such as thermal resistance and power dissipation derating curves.
- Switching characteristics such as turn-on/off delay times and rise/fall times.
- Package drawings and equivalent circuit diagram for the TO-251 and TO-252 packages.
Original MOSFET N-CHANNEL STF5NK52ZD 5NK52ZD 5NK52 5A 520V NewAUTHELECTRONIC
Original MOSFET N-CHANNEL STF5NK52ZD 5NK52ZD 5NK52 5A 520V New
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Ldr1833 - datasheet - st microelectronicsMarioFarias18
This document provides information on dual voltage regulators called the LDR1833 and LDR2533. The regulators can provide up to 500mA on output 1 and 1A on output 2, with low dropout voltages of 0.3V and 0.4V respectively. They feature electronic shutdown control for low power consumption, internal current and thermal limiting, and stable operation with small output capacitors. The regulators are available in a PPAK package and are suitable for applications such as PDAs, microdrives, and consumer devices.
Original N-Channel Mosfet STP9NK70Z 9NK70 700V 7.5A TO-220 New STMicroelectro...AUTHELECTRONIC
The document describes several N-channel 700V MOSFET products from STMicroelectronics, including key specifications and features. The MOSFETs have a typical RDS(on) of 1.0 ohm, are 100% avalanche rated, and have improved ESD capability. They are suitable for applications requiring high current, high speed switching such as offline power supplies and adapters.
The document is a datasheet that provides technical specifications and performance characteristics for the MPSA44 NPN silicon high voltage transistor. It includes maximum ratings, electrical characteristics, thermal characteristics, test circuits and graphs, and packaging information for the transistor.
Original Transistor NPN TIP41C TIP41 6A 100V TO-220 NewAUTHELECTRONIC
This document provides information on the TIP41C and TIP42C complementary power transistors from STMicroelectronics. It describes the features of the new enhanced series including high switching speed and improved hFE linearity. The transistors are suitable for applications such as audio amplifiers, general purpose circuits, and power linear and switching applications. Electrical characteristics, typical curves, test circuits and packaging information are provided.
Original High Current NPN Transistor BC639 639 TO-92 New ON SemiconductorAUTHELECTRONIC
This document provides specifications for the BC637, BC639, and BC639-16 NPN silicon high current transistors. It includes maximum ratings, electrical characteristics, thermal characteristics, and ordering information for the transistors. Key specifications include a collector-emitter voltage rating of 60-80V, continuous collector current of 1A, current gain of 25-160, and frequency bandwidth of up to 200MHz. The document also contains figures illustrating characteristics like safe operating area, current gain, and voltage/temperature coefficients.
Original NPN SILICON POWER DARLINGTONS Transistor TIP142 10A 100V TO-220F New...AUTHELECTRONIC
This document provides information on complementary power Darlington transistors TIP142 and TIP147, including:
- They are manufactured using planar technology with a "base island" layout and monolithic Darlington configuration for high gain and low saturation voltage.
- Electrical characteristics including current and voltage ratings, gain, switching times and safe operating area.
- Package details for the TO-247 package including mechanical drawings and dimensions.
- Revision history noting changes from previous revisions including package changes and technology updates.
Original Mosfet N-channel IPAW60R600 60S600CE 600V 6A TO-220F NewAUTHELECTRONIC
This document provides specifications for the IPAW60R600CE 600V CoolMOSTM CE power transistor. Key details include:
- It is a 600V CoolMOSTM CE MOSFET designed for consumer and lighting applications using Infineon's superjunction technology.
- Features include low losses, high commutation ruggedness, ease of use, Pb-free and halogen-free packaging.
- It is specified for applications such as PFC stages, hard and resonant switching stages in devices like PC power supplies, adapters, LCD/PDP TVs, and indoor lighting.
- Electrical characteristics include a maximum drain-source voltage of 650V, on-resistance below 600
Original NPN One Watt High Voltage Transistor MPSW42 W42 TO-92 New ON semicon...AUTHELECTRONIC
This document provides specifications for the MPSW42, a one watt high voltage NPN silicon transistor. Key details include:
- Maximum ratings for collector-emitter voltage, collector-base voltage, and collector current.
- Electrical characteristics like DC current gain, collector-emitter saturation voltage, and current-gain bandwidth product.
- Thermal characteristics including junction-to-ambient and junction-to-case thermal resistances.
- Package dimensions and ordering information for the TO-92 package type.
Hitachi's Service Proven Automotive IGBT MBB600TV6A at 600A / 650V with Direc...Juan Munoz
Hitachi introduces new EV and HEV IGBT MBB600TV6A (650V 600A 6 in 1), which more than 300,000 units have been sold successfully in Japan already, making it proven technology.
*Soon bringing the Temperature sensor on IGBT chip: MBB800TW6A (650V 800A 6 in 1).
--------------------------------------------------------------------------------------------------------------------------------
Hitachi Power Semiconductor Devices Direct Pin Liquid Cooling Technology has been applied on more than 600,000 units and is continuously improving with new units to hit the market rated at 800A this year and 1000A later on.
Among some of the features are:
• High speed, low loss IGBT module
• Low thermal impedance due to direct liquid cooling
• High reliability, high durability module
• Operating Junction Temperatures range from -50*C to +150*C
• Small footprint 163x94 mm package
• Three thermistor sensors, one per each phase leg
• Compact and stable sealing structure and thermal grease‐free
The Hitachi’s Direct Pin Liquid Cooling IGBTs offers (1) low thermal resistance realized by thermal-greaseless “direct-liquid-cooling” technology with pin-fin, whose pressure drop and fin efficiency are optimally designed, (2) small package size, which enables compact power conditioner system, (3) high reliability and long lifetime realized by high strength Si3N4 insulated substrate and newly developed RoHS bonding technologies. The thermal resistance Rj-w of the IGBT module is reduced by 35 percent when compared to “indirect-cooling” conventional modules using thermal grease. The developed IGBT module and channel cover jacket are approximately 37 percent lighter and 45 percent smaller when compared to conventional modules with the same power capability.
Applications
• EV / HEV / PHEV
• Commercial Electric Vehicles
Original PNP Transistor A1020-Y A1020 1020 2SA1020 TO-92 New ON semiconductorAUTHELECTRONIC
This document provides information on the 2SA1020 PNP transistor, including its maximum ratings, electrical characteristics, and packaging details. The 2SA1020 is a one watt, high current PNP transistor in a TO-92 package. It has a continuous collector current rating of 2 amps and can dissipate up to 1.5 watts at a case temperature of 25°C. The document provides tables of its key electrical parameters and graphs of characteristics like current gain and safe operating area.
The DS1307 is a real-time clock with 56 bytes of battery-backed SRAM and an I2C serial interface. It keeps time in seconds, minutes, hours, date, month, and year formats with leap year compensation. The device operates from a primary power supply or backup battery. It enters a low-power mode when running from battery alone.
This document provides information on silicon controlled rectifiers (SCRs) in the 2N6504 series from ON Semiconductor. The SCRs are designed for half-wave AC control applications like motor controls, heating controls, and crowbar circuits. They feature glass passivated junctions for parameter uniformity and stability. The SCRs have blocking voltages up to 800V and surge current capabilities up to 300A. The document provides maximum ratings, thermal characteristics, electrical characteristics, ordering information, and package dimensions for the SCRs.
Similar to Original N-Channel Mosfet STP65NF06 P65NF06 65A 60V TO-220 New ST (20)
Original Power Supply IC LNK632DG LNK632 632 SOP-7 NewAUTHELECTRONIC
The LNK632DG is an energy efficient constant voltage/constant current switcher for adapters and chargers. It dramatically simplifies CV converter designs by eliminating secondary control circuitry and compensation components. Some key features include auto-restart protection, hysteretic thermal shutdown, tight output regulation that compensates for cable voltage drops and temperature variations, and high efficiency down to light loads. It is well-suited for charger applications like cell phones, PDAs, and MP3 players.
The document summarizes an low-profile relay model called G5RL that is suitable for various applications. It has several models including standard, low noise, high inrush, and high capacity. Key specifications include a height of 15.7mm, 8mm creepage distance, 10kV impulse withstand voltage. It provides information on ordering, ratings for coils and contacts, characteristics, dimensions, and engineering data.
Original Transition-Mode PFC Controller IC LD7591GS 7591 SOP-8 New LeadtrendAUTHELECTRONIC
This document provides information about the LD7591 transition-mode PFC controller, including:
- It is a voltage mode PFC controller that operates in transition mode with protections like OVP, OCP, and brown-in protection.
- It has features like low startup current, over voltage protection, open feedback protection, disable function, and integrated current sensing.
- Typical applications include adapters over 65W, open frame switching power supplies, LCD TV power supplies, and LED power supplies.
Original NPN Darlington Transistor MC1413DR2G 1413DR2G NCV1413BDG 1413BDG 141...AUTHELECTRONIC
The document describes a high voltage, high current Darlington transistor array that is well-suited for driving lamps, relays, or printer hammers. It has 7 NPN Darlington connected transistors with a high breakdown voltage and internal suppression diodes to ensure safety with inductive loads. It can drive incandescent lamps with peak inrush currents up to 500mA per transistor.
Original EEPROM IC BR93L76RFJ 93L76 RL76 SOP-8 New RohmAUTHELECTRONIC
This document provides important safety information regarding the intended use of ROHM products. It states that the products are designed for ordinary electronic equipment but should not be used in applications requiring extremely high reliability where malfunctions could directly endanger human life, such as medical devices. It also notes the products are not designed with antiradiation properties and certain exports may require controls under Japanese law. Contact information is provided for sales representatives.
Original Advanced IGBT/Mosfet Driver TD350E 350E SOP-14 New ST MicroelectronicsAUTHELECTRONIC
This document provides information on an advanced IGBT/MOSFET gate driver called the TD350E, including its key features, applications, description, and specifications. The TD350E is designed for applications such as inverters, motor control, and UPS systems. It provides 1.5A/2.3A gate drive, active Miller clamping, two-level turn-off protection, desaturation detection, and fault status output. Electrical characteristics and timing diagrams are included to specify the device's performance.
Original N-Channel Mosfet 2SK3562 3562 TO-220 New ToshibaAUTHELECTRONIC
This document provides specifications and performance characteristics for the Toshiba 2SK3562 N-channel MOSFET transistor. Key details include:
- It is an enhancement mode transistor intended for switching regulator applications with low on-resistance of 0.9 ohms and forward transfer admittance of 5.0S.
- Maximum ratings include a drain-source voltage of 600V, drain current of 6A continuous or 24A pulse, and drain power dissipation of 40W.
- Electrical characteristics at 25C include a gate threshold voltage of 2.0-4.0V, on-resistance of 0.9-1.25 ohms, and input/output capacit
Original N-Channel Mosfet FDPF33N25 33N25 TO-220 New FairChildAUTHELECTRONIC
This document provides information on the FDPF33N25250VN-Channel MOSFET from Fairchild Semiconductor. It is a 250V N-Channel MOSFET with low on-resistance of 0.094Ω and fast switching capabilities. It uses Fairchild's proprietary planar stripe DMOS technology to minimize resistance and maximize performance for applications such as high efficiency power supplies. Key specifications and performance characteristics are provided.
Original N-Channel Mosfet IRFB4020PBF 4020 TO-220-3 New International RectifierAUTHELECTRONIC
This document provides specifications for a digital audio MOSFET designed for use in class D audio amplifier applications. The MOSFET has been optimized to achieve low on-resistance, gate charge, and reverse recovery charge for improved efficiency, total harmonic distortion, and electromagnetic interference. Additional features include a 175°C operating temperature and repetitive avalanche capability making it robust and reliable for audio amplifiers. Tables and graphs provide electrical characteristics and performance metrics.
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Original N-Channel Mosfet STP65NF06 P65NF06 65A 60V TO-220 New ST
1. July 2006 Rev 1 1/14
14
STD65NF06
STP65NF06
N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220
STripFET™ II Power MOSFET
General features
■ Standard level gate drive
■ 100% avalanche tested
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”™
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
■ Switching application
Internal schematic diagram
Type VDSS RDS(on) ID
STD65NF06 60V <14mΩ 60A
STP65NF06 60V <14mΩ 60A
DPAK
1
2
3
TO-220
1
3
www.st.com
Order codes
Part number Marking Package Packaging
STD65NF06 D65NF06 DPAK Tape & reel
STP65NF06 P65NF06 TO-220 Tube
3. STD65NF06 - STP65NF06 Electrical ratings
3/14
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 60 V
VGS Gate- source voltage ± 20 V
ID Drain current (continuous) at TC = 25°C 60 A
ID Drain current (continuous) at TC = 100°C 42 A
IDM
(1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 240 A
Ptot Total dissipation at TC = 25°C 110 W
Derating Factor 0.73 W/°C
dv/dt (2)
2. ISD ≤60A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Peak diode recovery voltage slope 10 V/ns
EAS
(3)
3. Starting Tj = 25 °C, ID = 30A, VDD = 40V
Single pulse avalanche energy 390 mJ
Tstg Storage temperature
-55 to 175 °C
Tj Max. operating junction temperature
Table 2. Thermal data
Symbol Parameter TO-220 DPAK Unit
Rthj-case Thermal resistance junction-case max 1.36 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 -- °C/W
Rthj-pcb(1)
1. When mounted on FR-4 of 1 inch², 2 oz Cu
Thermal resistance junction-pcb max -- 50 °C/W
Tl Maximum lead temperature for soldering
purpose (for 10sec. 1.6mm from case)
300 -- °C/W
4. Electrical characteristics STD65NF06 - STP65NF06
4/14
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 250µA, VGS =0 60 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating,@125°C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 4 V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 30A 11.5 14 mΩ
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward
transconductance
VDS= 25V, ID = 30A 50 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
1700
400
135
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 30V, ID = 30A
RG = 4.7Ω VGS = 10V
(see Figure 12)
15
60
40
16
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 30V, ID = 60A,
VGS = 10V, RG = 4.7Ω
(see Figure 13)
54
10
20
75 nC
nC
nC
5. STD65NF06 - STP65NF06 Electrical characteristics
5/14
Table 5. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
60
240
A
A
VSD
(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage ISD = 60A, VGS = 0 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 60A, di/dt = 100A/µs,
VDD = 25V, Tj = 150°C
(see Figure 14)
70
150
4.4
ns
nC
A
6. Electrical characteristics STD65NF06 - STP65NF06
6/14
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Normalized breakdown voltage
temperature
Figure 6. Static drain-source on resistance
7. STD65NF06 - STP65NF06 Electrical characteristics
7/14
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs temperature
Figure 10. Normalized on resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics
8. Test circuit STD65NF06 - STP65NF06
8/14
3 Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 15. Unclamped Inductive load test
circuit
Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform
9. STD65NF06 - STP65NF06 Package mechanical data
9/14
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
10. Package mechanical data STD65NF06 - STP65NF06
10/14
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
TO-220 MECHANICAL DATA
11. STD65NF06 - STP65NF06 Package mechanical data
11/14
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
b4 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
D1 5.1 0.200
E 6.4 6.6 0.252 0.260
E1 4.7 0.185
e 2.28 0.090
e1 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L 1 0.039
(L1) 2.8 0.110
L2 0.8 0.031
L4 0.6 1 0.023 0.039
R 0.2 0.008
V2 0° 8° 0° 8°
DPAK MECHANICAL DATA
0068772-F
12. Packing mechanical data STD65NF06 - STP65NF06
12/14
5 Packing mechanical data
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM.
mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM.
mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters
13. STD65NF06 - STP65NF06 Revision history
13/14
6 Revision history
Table 6. Revision history
Date Revision Changes
24-Jul-2006 1 First release