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February 2007 Rev 6 1/14
14
STD12NF06L
STD12NF06L-1
N-channel 60V - 0.08Ω - 12A - DPAK - IPAK
STripFET™ II Power MOSFET
General features
■ Exceptional dv/dt capability
■ Low gate charge
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
■ Switching application
Internal schematic diagram
Type VDSSS RDS(on) ID
STD12NF06L
STD12NF06L-1
60V
60V
<0.1Ω
<0.1Ω
12A
12A
1
3
DPAK
3
2
1
IPAK
www.st.com
Order codes
Part number Marking Package Packaging
STD12NF06LT4 D12NF06L DPAK Tape & reel
STD12NF06L-1 D12NF06L IPAK Tube
Contents STD12NF06L
2/14
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STD12NF06L Electrical ratings
3/14
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 60 V
VDGR Drain-gate voltage (RGS = 20KΩ) 60 V
VGS Gate-source voltage ± 16 V
ID Drain current (continuous) at TC = 25°C 12 A
ID Drain current (continuous) at TC=100°C 8.5 A
IDM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 48 A
PTOT Total dissipation at TC = 25°C 30 W
Derating factor 0.2 W/°C
dv/dt (2)
2. ISD ≤12A, di/dt ≤200A/µs, VDS ≤40V, TJ ≤TJMAX
Peak diode recovery voltage slope 15 V/ns
EAS
(3)
3. Starting TJ = 25 o
C, ID = 6A, VDD = 30V
Single pulse avalanche energy 100 mJ
Tstg Storage temperature
-55 to 175 °C
TJ Max. operating junction temperature
Table 2. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case Max 5 °C/W
RthJA Thermal resistance junction-ambient Max 100 °C/W
Tl
Maximum lead temperature for soldering
purpose
275 °C
Electrical characteristics STD12NF06L
4/14
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 25mA, VGS = 0 60 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating
VDS = Max rating,
TC = 125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V ±100 nA
VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 1 2 V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 6A
VGS = 5V, ID = 6A
0.08
0.10
0.10
0.12
Ω
Ω
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance VDS = 25V, ID = 6A 7 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
350
75
30
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 48V, ID = 12A
VGS = 5V
7.5
2.5
3.0
10 nC
nC
nC
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 30V, ID = 6A,
RG = 4.7Ω, VGS = 4.5V
Figure 12 on page 8
10
35
20
13
ns
ns
ns
ns
STD12NF06L Electrical characteristics
5/14
Table 6. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
ISD Source-drain current 12 A
ISDM Source-drain current (pulsed) 48 A
VSD
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage ISD = 12A, VGS = 0 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12A,
di/dt = 100A/µs,
VDD = 16V, TJ = 150°C
Figure 14 on page 8
50
65
2.5
ns
µC
A
Electrical characteristics STD12NF06L
6/14
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characteristics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
STD12NF06L Electrical characteristics
7/14
Figure 7. Gate charge vs. gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs. temperature
Figure 10. Normalized on resistance vs.
temperature
Figure 11. Source-drain diode forward
characteristics
Test circuit STD12NF06L
8/14
3 Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 15. Unclamped Inductive load test
circuit
Figure 16. Unclamped inductive waveform
STD12NF06L Package mechanical data
9/14
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
Package mechanical data STD12NF06L
10/14
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
A
C2
C
A3H
A1
D LL2
L1
13
==
B3
B
B6
B2
E
G
==
==
B5
2
TO-251 (IPAK) MECHANICAL DATA
0068771-E
STD12NF06L Package mechanical data
11/14
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
b4 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
D1 5.1 0.200
E 6.4 6.6 0.252 0.260
E1 4.7 0.185
e 2.28 0.090
e1 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L 1 0.039
(L1) 2.8 0.110
L2 0.8 0.031
L4 0.6 1 0.023 0.039
R 0.2 0.008
V2 0° 8° 0° 8°
DPAK MECHANICAL DATA
0068772-F
Packaging mechanical data STD12NF06L
12/14
5 Packaging mechanical data
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM.
mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM.
mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters
STD12NF06L Revision history
13/14
6 Revision history
Table 7. Revision history
Date Revision Changes
09-Sep-2004 4 Complete document
08-Aug-2006 5 New template, no content change
19-Feb-2007 6 Typo mistake on page 1
STD12NF06L
14/14
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
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Information in this document supersedes and replaces all information previously supplied.
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© 2007 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
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Original N-Channel Mosfet STD12NF06LT4 12NF06 D12NF06 D12NF 60V 12A TO-252 New STMicroelectronics

  • 1. February 2007 Rev 6 1/14 14 STD12NF06L STD12NF06L-1 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™ II Power MOSFET General features ■ Exceptional dv/dt capability ■ Low gate charge Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application Internal schematic diagram Type VDSSS RDS(on) ID STD12NF06L STD12NF06L-1 60V 60V <0.1Ω <0.1Ω 12A 12A 1 3 DPAK 3 2 1 IPAK www.st.com Order codes Part number Marking Package Packaging STD12NF06LT4 D12NF06L DPAK Tape & reel STD12NF06L-1 D12NF06L IPAK Tube
  • 2. Contents STD12NF06L 2/14 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
  • 3. STD12NF06L Electrical ratings 3/14 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 60 V VDGR Drain-gate voltage (RGS = 20KΩ) 60 V VGS Gate-source voltage ± 16 V ID Drain current (continuous) at TC = 25°C 12 A ID Drain current (continuous) at TC=100°C 8.5 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 48 A PTOT Total dissipation at TC = 25°C 30 W Derating factor 0.2 W/°C dv/dt (2) 2. ISD ≤12A, di/dt ≤200A/µs, VDS ≤40V, TJ ≤TJMAX Peak diode recovery voltage slope 15 V/ns EAS (3) 3. Starting TJ = 25 o C, ID = 6A, VDD = 30V Single pulse avalanche energy 100 mJ Tstg Storage temperature -55 to 175 °C TJ Max. operating junction temperature Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case Max 5 °C/W RthJA Thermal resistance junction-ambient Max 100 °C/W Tl Maximum lead temperature for soldering purpose 275 °C
  • 4. Electrical characteristics STD12NF06L 4/14 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 25mA, VGS = 0 60 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 1 2 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 6A VGS = 5V, ID = 6A 0.08 0.10 0.10 0.12 Ω Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS = 25V, ID = 6A 7 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 350 75 30 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 48V, ID = 12A VGS = 5V 7.5 2.5 3.0 10 nC nC nC Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 30V, ID = 6A, RG = 4.7Ω, VGS = 4.5V Figure 12 on page 8 10 35 20 13 ns ns ns ns
  • 5. STD12NF06L Electrical characteristics 5/14 Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 12 A ISDM Source-drain current (pulsed) 48 A VSD (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 12A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12A, di/dt = 100A/µs, VDD = 16V, TJ = 150°C Figure 14 on page 8 50 65 2.5 ns µC A
  • 6. Electrical characteristics STD12NF06L 6/14 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance
  • 7. STD12NF06L Electrical characteristics 7/14 Figure 7. Gate charge vs. gate-source voltage Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs. temperature Figure 10. Normalized on resistance vs. temperature Figure 11. Source-drain diode forward characteristics
  • 8. Test circuit STD12NF06L 8/14 3 Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load switching and diode recovery times Figure 15. Unclamped Inductive load test circuit Figure 16. Unclamped inductive waveform
  • 9. STD12NF06L Package mechanical data 9/14 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
  • 10. Package mechanical data STD12NF06L 10/14 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A C2 C A3H A1 D LL2 L1 13 == B3 B B6 B2 E G == == B5 2 TO-251 (IPAK) MECHANICAL DATA 0068771-E
  • 11. STD12NF06L Package mechanical data 11/14 DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 b4 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 D1 5.1 0.200 E 6.4 6.6 0.252 0.260 E1 4.7 0.185 e 2.28 0.090 e1 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L 1 0.039 (L1) 2.8 0.110 L2 0.8 0.031 L4 0.6 1 0.023 0.039 R 0.2 0.008 V2 0° 8° 0° 8° DPAK MECHANICAL DATA 0068772-F
  • 12. Packaging mechanical data STD12NF06L 12/14 5 Packaging mechanical data TAPE AND REEL SHIPMENT DPAK FOOTPRINT DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY 2500 2500 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 TAPE MECHANICAL DATA All dimensions are in millimeters
  • 13. STD12NF06L Revision history 13/14 6 Revision history Table 7. Revision history Date Revision Changes 09-Sep-2004 4 Complete document 08-Aug-2006 5 New template, no content change 19-Feb-2007 6 Typo mistake on page 1
  • 14. STD12NF06L 14/14 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com