This document is a datasheet that provides information about the IHW20N120R5 resonant switching IGBT. It includes details on the device's features, key parameters, maximum ratings, electrical characteristics, switching characteristics and package. The IHW20N120R5 is a 1200V IGBT with a monolithic body diode, designed for soft switching applications such as inductive cooking and inverterized microwave ovens. It has low saturation voltage, positive temperature coefficient for easy parallel switching, and qualified for industrial applications.

1. ResonantSwitchingSeries
ReverseConductingIGBTwithmonolithicbodydiode
IHW20N120R5
Datasheet
IndustrialPowerControl

2. Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2
www.infineon.com 2019-09-19
IHW20N120R5
ResonantSwitchingSeries
ReverseConductingIGBTwithmonolithicbodydiode
Features:
•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutation
•TRENCHSTOPTM
technologyoffering:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior
-lowVCEsat
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinVCEsat
•LowEMI
•Pb-freeleadplating;RoHScompliant
•Halogenfree(accordingtoIEC61249-2-21)
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Inductivecooking
•Inverterizedmicrowaveovens
•Resonantconverters
•Softswitchingapplications
ProductValidation:
Qualifiedforindustrialapplicationsaccordingtotherelevanttests
ofJEDEC47/20/22
Packagepindefinition:
•Pin1-gate
•Pin2backside-collector
•Pin3-emitter
G
C
E
G
C
E
KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IHW20N120R5 1200V 20A 1.55V 175°C H20MR5 PG-TO247-3

3. Datasheet 3 V2.2
2019-09-19
IHW20N120R5
ResonantSwitchingSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

4. Datasheet 4 V2.2
2019-09-19
IHW20N120R5
ResonantSwitchingSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Collector-emittervoltage,Tvj≥25°C VCE 1200 V
DCcollectorcurrent,limitedbyTvjmax
Tc=25°C
Tc=100°C
IC 40.0
20.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A
Non repetitive peak collector current1)
ICSM 200 A
Turn off safe operating area
VCE≤1200V,Tvj≤175°C,tp=1µs
- 60.0 A
Diodeforwardcurrent,limitedbyTvjmax
Tc=25°C
Tc=100°C
IF 40.0
20.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D0.010)
VGE
±20
±25
V
PowerdissipationTc=25°C
PowerdissipationTc=100°C
Ptot
288.0
144.0
W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s 260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M 0.6 Nm
ThermalResistance
Value
min. typ. max.
Parameter Symbol Conditions Unit
RthCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c) - - 0.52 K/W
Diode thermal resistance,
junction - case
Rth(j-c) - - 0.52 K/W
Thermal resistance
junction - ambient
Rth(j-a) - - 40 K/W
1)
capacitor charging saturation current limited by Tvjmax 175°C and tp 3µs

5. Datasheet 5 V2.2
2019-09-19
IHW20N120R5
ResonantSwitchingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.55
1.75
1.80
1.75
-
-
V
Diode forward voltage VF
VGE=0V,IF=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.60
1.75
1.85
1.85
-
-
V
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 5.1 5.8 6.4 V
Zero gate voltage collector current ICES
VCE=1200V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
300
100
-
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=20.0A - 15.2 - S
Integrated gate resistor rG none Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 1340 -
Output capacitance Coes - 43 -
Reverse transfer capacitance Cres - 34 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QG
VCC=1080V,IC=20.0A,
VGE=15V
- 170.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE - 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-off delay time td(off) - 260 - ns
Fall time tf - 50 - ns
Turn-off energy Eoff - 0.75 - mJ
Tvj=25°C,
VCC=600V,IC=20.0A,
VGE=0.0/15.0V,
RG(on)=10.0Ω,RG(off)=10.0Ω,
Lσ=175nH,Cσ=40pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.

6. Datasheet 6 V2.2
2019-09-19
IHW20N120R5
ResonantSwitchingSeries
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°C
Turn-off delay time td(off) - 350 - ns
Fall time tf - 90 - ns
Turn-off energy Eoff - 1.55 - mJ
Tvj=175°C,
VCC=600V,IC=20.0A,
VGE=0.0/15.0V,
RG(on)=10.0Ω,RG(off)=10.0Ω,
Lσ=175nH,Cσ=40pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.

7. Datasheet 7 V2.2
2019-09-19
IHW20N120R5
ResonantSwitchingSeries
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V,tp=1µs)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0.1
1
10
100
not for linear use
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
50
100
150
200
250
300
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
25 50 75 100 125 150 175
0
5
10
15
20
25
30
35
40
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
50
60
VGE=20V
17V
15V
13V
11V
9V
7V
5V

8. Datasheet 8 V2.2
2019-09-19
IHW20N120R5
ResonantSwitchingSeries
Figure 5. Typicaloutputcharacteristic
(Tvj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
10
20
30
40
50
60
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0 2 4 6 8 10 12
0
10
20
30
40
50
60
Tj=25°C
Tj=175°C
Figure 7. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
0 25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IC=3A
IC=10A
IC=20A
IC=40A
Figure 8. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,RG(on)=10Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0 5 10 15 20 25 30 35 40
10
100
1000
td(off)
tf

9. Datasheet 9 V2.2
2019-09-19
IHW20N120R5
ResonantSwitchingSeries
Figure 9. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,IC=20A,dynamictestcircuitin
Figure E)
RG,GATERESISTANCE[Ω]
t,SWITCHINGTIMES[ns]
10 15 20 25 30 35 40 45 50
10
100
1000
1E+4
td(off)
tf
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=600V,VGE=0/15V,
IC=20A,RG(on)=10Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
10
100
1000
td(off)
tf
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.5mA,min/maxvaluesverifiedbychip
design)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
0 25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
typ.
min.
max.
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,RG(on)=10Ω,RG(off)=10Ω,
dynamic test circuit in Figure E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
0 5 10 15 20 25 30 35 40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Eoff

10. Datasheet 10 V2.2
2019-09-19
IHW20N120R5
ResonantSwitchingSeries
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,IC=20A,dynamictestcircuitin
Figure E)
RG,GATERESISTANCE[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
10 15 20 25 30 35 40 45 50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Eoff
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=600V,VGE=0/15V,
IC=20A,RG(on)=10Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Eoff
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=175°C,VGE=0/15V,
IC=20A,RG(on)=10Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
400 500 600 700 800 900 1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Eoff
Figure 16. Typicalgatecharge
(IC=20A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 25 50 75 100 125 150 175 200 225 250
0
2
4
6
8
10
12
14
16
18
20
240V
960V

11. Datasheet 11 V2.2
2019-09-19
IHW20N120R5
ResonantSwitchingSeries
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 5 10 15 20 25 30
10
100
1000
1E+4
Cies
Coes
Cres
Figure 18. IGBTtransientthermalresistance
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.01386372
3.0E-5
2
0.0338046
2.1E-4
3
0.1412901
2.1E-3
4
0.302491
0.0110047
5
0.02700266
0.07241154
6
1.9E-3
1.854229
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.01386372
3.0E-5
2
0.0338046
2.1E-4
3
0.1412901
2.1E-3
4
0.302491
0.0110047
5
0.02700266
0.07241154
6
1.9E-3
1.854229
Figure 20. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
5
10
15
20
25
30
35
40
Tj=25°C
Tj=175°C

12. Datasheet 12 V2.2
2019-09-19
IHW20N120R5
ResonantSwitchingSeries
Figure 21. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
0 25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF=3A
IF=10A
IF=20A
IF=40A

13. Datasheet 13 V2.2
2019-09-19
IHW20N120R5
ResonantSwitchingSeries
Package Drawing PG-TO247-3

14. Datasheet 14 V2.2
2019-09-19
IHW20N120R5
ResonantSwitchingSeries
t
a b
td(off)
tf tr
td(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE
(t)
t
t
t
t1 t4
2% IC
10% VGE
2% VCE
t2
t3
E
t
t
V I t
off
= x x d
1
2
CE C E
t
t
V I t
on
= x x d
3
4
CE C
CC
dI /dtF
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switching
characteristics
Figure E. Dynamic test circuit
Figure D.
I (t)C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Q
rr a b
rr a b
= +
= +
Qa Qb
V (t)CE
VGE
(t)
I (t)C
V (t)CE
Testing Conditions

15. Datasheet 15 V2.2
2019-09-19
IHW20N120R5
ResonantSwitchingSeries
RevisionHistory
IHW20N120R5
Revision:2019-09-19,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2014-04-17 Preliminary data sheet
2.1 2015-01-26 Final data sheet
2.2 2019-09-19 additional parameter in maximum ratings table: non repetitive peak collector current

16. Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2019.
AllRightsReserved.
ImportantNotice
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand
liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird
party.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof
theproductofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof
customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe
completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.
Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest
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ElectronicsCouncil.
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pleasecontactyournearestInfineonTechnologiesoffice.
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