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On Optimization of Manufacturing of a Sense-amplifier Based Flip-flop
1. www.ajms.com 15
ISSN 2581-3463
RESEARCH ARTICLE
On Optimization of Manufacturing of a Sense-amplifier Based Flip-flop
E. L. Pankratov1,2
1
Department of Mathematical and Natural Sciences, Nizhny Novgorod State University, 23 Gagarin Avenue,
Nizhny Novgorod, 603950, Russia, 2
Department of Higher Mathematics, Nizhny Novgorod State Technical
University, 24 Minin Street, Nizhny Novgorod, 603950, Russia
Received: 17-11-2019; Revised: 07-12-2019; Accepted: 10-01-2020
ABSTRACT
The paper describes an approach for increasing of density of field-effect heterotransistors in a sense-
amplifier based flip-flop. To illustrate the approach, we consider manufacturing of an amplifier of
power in a heterostructure with specific configuration. One shall dope some specific areas of the
heterostructure by diffusion or ion implantation. After that, it should be done optimized annealing
of radiation defects and/or dopant. We introduce an approach for decreasing of stress between
layers of heterostructure. Furthermore, it has been considered an analytical approach for prognosis
of heat and mass transport in heterostructures, which can be take into account mismatch-induced
stress.
Key words: Broadband power amplifier, increasing of element integration rate, optimization of
manufacturing
INTRODUCTION
Now some electrical problems (to increase performance of solid-state electronic devices, to increase
their reliability, and to increase density of integrated circuits elements: Transistors and diodes) are
solving.[1-6]
Increasing of performance could be obtained using materials, which have mobility of charge
carriers with higher values.[7-10]
Increasing of density of elements of integrated circuits could be obtained
by optimized manufacturing of their elements in heterostructures with thin epitaxial layers.[3-5,11-15]
In
this situation, dimensions of elements of integrated circuits will be decreased. Another approach to
decrease these dimensions is using microwave annealing and laser annealing of radiation defects and/
or dopants.[16-18]
In this paper, our aim is to formulate an approach to decrease dimensions of field-effect
heterotransistors framework a broadband amplifier of power [Figure 1] framework a heterostructure
with specific configuration (epitaxial layer/porous buffer layer/substrate and sections in the epitaxial
layer, and manufactured using another materials).
Method of solution
Now let us analyze distribution of concentration of dopant in space and time in heterostructure from
Figure 1. To determine the concentration, we solve the following second Fick’s law.[1,20-23]
( ) ( ) ( ) ( )
, , , , , , , , , , , ,
C x y z t C x y z t C x y z t C x y z t
D D D
t x x y y z z
∂ ∂ ∂ ∂
∂ ∂ ∂
= + + +
∂ ∂ ∂ ∂ ∂ ∂ ∂
Address for correspondence:
E. L. Pankratov,
E-mail: elp2004@mail.ru
2. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 16
( ) ( )
1
0
, , , , , ,
z
L
S
S
D
x y z t C x y W t dW
x kT
∂
Ω ∇ +
∂
∫
( ) ( )
1
0
, , , , , ,
z
L
S
S
D
x y z t C x y W t dW
y kT
∂
Ω ∇ +
∂
∫ (1)
( ) ( ) ( )
2 2 2
, , , , , , , , ,
C S C S C S
D D D
x y z t x y z t x y z t
x V kT x y V kT y z V kT z
+ +
.
Conditions (initial and boundary) for this equation are following (these boundary conditions correspond
to absents of dopant flow through external boundary of heterostructure; and the initial condition
corresponds to distribution of dopant before starting of annealing).
Figure 1: (a) Scheme of the amplifier, which considered in this paper.[19]
(b) Considered heterostructure, which includes into
itself epitaxial layers, buffer layer, and substrate
b
a
3. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 17
( )
0
, , ,
0
x
C x y z t
x =
∂
=
∂
,
( )
, , ,
0
x
x L
C x y z t
x =
∂
=
∂
,
( )
0
, , ,
0
y
C x y z t
y =
∂
=
∂
, C(x,y,z,0)=fC
(x,y,z),
( )
, , ,
0
y
x L
C x y z t
y =
∂
=
∂
,
( )
0
, , ,
0
z
C x y z t
z =
∂
=
∂
,
( )
, , ,
0
z
x L
C x y z t
z =
∂
=
∂
(1a)
Function C(x,y,z,t) describes distribution of concentration of dopant in space and time; parameter W
mean volume of atom of dopant; symbol Ñs
mean surficial gradient operator; function ( )
0
, , ,
z
L
C x y z t d z
∫
describes dopant surficial concentration on interface between layers of heterostructure (we consider:
Z-axis is perpendicular to interface between heterostructure’s layers); functions m1
(x,y,z,t) and m2
(x,y,z,t)
describe distributions of chemical potentials in space and their dependences on temperature: m1
(x,y,z,t)
accounting mismatch-induced stress in layers of heterostructure, m2
(x,y,z,t) accounting porosity of
material; functions D(x,y,z,T) and DS
(x,y,z,T) describe distributions of coefficients of volumetric
and surficial diffusions in space and their dependences on temperature. We used recently described
approximations of dopant diffusions coefficients.[24-26]
( )
( )
( )
( ) ( )
( )
2
1 2 2
* *
, , , , , , , , ,
, , , 1 1
, , ,
C L
C x y z t V x y z t V x y z t
D D x y z T
P x y z T V V
= + + +
,
( )
( )
( )
( ) ( )
( )
2
1 2 2
* *
, , , , , , , , ,
, , , 1 1
, , ,
S S L S
C x y z t V x y z t V x y z t
D D x y z T
P x y z T V V
= + + +
(2)
Functions DL
(x,y,z,T) and DLS
(x,y,z,T) describe dependences of dopant diffusion coefficients on
coordinate and temperature; parameter T describes temperature of annealing; function P(x,y,z,T)
describes dependence of solubility of dopant on coordinate and temperature; value of parameter g will
be changed with changing of properties of materials and will be integer usually in the following interval
gÎ;[1,3,24]
function V(x,y,z,t) describes distribution of radiation vacancies concentration in space and time
with equilibrium distribution V*. Distributions of point radiation defects concentration in space and time
have been determined solutions of the following system of equations.[20-23,25,26]
( )
( )
( )
( )
( )
, , , , , , , , ,
, , , , , ,
I I
I x y z t I x y z t I x y z t
D x y z T D x y z T
t x x y y
= + +
( )
( )
( ) ( ) ( )
2
, ,
, , ,
, , , , , , , , , , , ,
I I I I V
I x y z t
D x y z T k x y z T I x y z t k x y z T
z z
− − ×
( ) ( ) ( ) ( )
0
, , , , , , , , , , , ,
z
L
IS
S
D
I x y z t V x y z t x y z t I x y W t dW
x kT
∂
+ Ω ∇ +
∂
∫
( ) ( )
( )
2
0
, , ,
, , , , , ,
z
L
I S
IS
S
D x y z t
D
x y z t I x y W t dW
y kT x V kT x
∂
∂ ∂
Ω ∇ + +
∂ ∂ ∂
∫
4. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 18
( ) ( )
2 2
, , , , , ,
I S I S
D D
x y z t x y z t
y VkT y z VkT z
∂ ∂
∂ ∂
+
∂ ∂ ∂ ∂
(3)
( )
( )
( )
( )
( )
, , , , , , , , ,
, , , , , ,
V V
V x y z t V x y z t V x y z t
D x y z T D x y z T
t x x y y
= + +
( )
( )
( ) ( ) ( )
2
, ,
, , ,
, , , , , , , , , , , ,
V V V I V
V x y z t
D x y z T k x y z T V x y z t k x y z T
z z
− − ×
( ) ( ) ( ) ( )
0
, , , , , , , , , , , ,
z
L
VS
S
D
I x y z t V x y z t x y z t V x y W t dW
x kT
∂
+ Ω ∇ +
∂
∫
( ) ( )
( )
2
0
, , ,
, , , , , ,
z
L
V S
VS
S
D x y z t
D
x y z t V x y W t dW
y kT x VkT x
∂
∂ ∂
Ω ∇ + +
∂ ∂ ∂
∫
( ) ( )
2 2
, , , , , ,
V S V S
D D
x y z t x y z t
y VkT y z VkT z
∂ ∂
∂ ∂
+
∂ ∂ ∂ ∂
Initial and boundary conditions for Eq. (3) could be written as
( )
0
, , ,
0
x
I x y z t
x
=
= ,
( )
, , ,
0
x
x L
I x y z t
x
=
= ,
( )
0
, , ,
0
y
I x y z t
y
=
= ,
( )
, , ,
0
y
y L
I x y z t
y
=
= ,
( )
0
, , ,
0
z
I x y z t
z
=
= ,
( )
, , ,
0
z
z L
I x y z t
z
=
= ,
( )
0
, , ,
0
x
V x y z t
x
=
= ,
( )
, , ,
0
x
x L
V x y z t
x
=
= ,
( )
0
, , ,
0
y
V x y z t
y
=
= ,
(4)
( )
, , ,
0
y
y L
V x y z t
y
=
= ,
( )
0
, , ,
0
z
V x y z t
z
=
= ,
( )
, , ,
0
z
z L
V x y z t
z
=
= , I(x,y,z,0)=
fI
(x,y,z), V(x,y,z,0)=fV
(x,y,z), ( )
1 1 1 2 2 2
1 1 1
2
, , , 1
n n n
V x V t y V t z V t t V
kT x y z
∞
+ + + = +
+ +
Function I(x,y,z,t) describes distribution of concentration of radiation interstitials (equilibrium
distribution I*) in space and time; functions DI
(x,y,z,T), DV
(x,y,z,T), DIS
(x,y,z,T), and DVS
(x,y,z,T)
describe dependences of volumetric and surficial diffusions coefficients of vacancies and interstitials
on coordinates and temperature; terms I2
(x,y,z,t) and V2
(x,y,z,t) describe generation di-interstitials
and divacancies (e.g., Vinetskiy and Kholodar’[26]
and appropriate references in this book); functions
kI,V
(x,y,z,T), kI,I
(x,y,z,T), and kV,V
(x,y,z,T) describe analogous dependences of parameters of recombination
of point radiation defects and generation of their simplest complexes; parameter k corresponds to
Boltzmann constant; parameter w is equal to a3
, where a describes interatomic distance; parameter
5. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 19
describes specific surface energy. To take into account the porosity of buffer layers we assume, that
porous are approximately cylindrical with average values 2 2
1 1
r x y
= + and z1
before annealing.[23]
With
time small pores will decompose on vacancies. These vacancies will be absorbed by larger pores.[27]
With the time volume of large pores decreasing due to absorbing these vacancies and became more
spherical.[27]
Distribution of concentration of vacancies in heterostructure, existing due to porosity, could
be determined by summing on all pores, i.e.,
( ) ( )
0 0 0
, , , , , ,
l m n
p
i j k
V x y z t V x i y j z k t
= = =
= + + +
∑∑∑ , 2 2 2
R x y z
= + +
Parameters a, b, and c describe average distances between centers of pores in directions x, y, and z,
respectively, parameters l, m, and n are the quantities of pores in appropriate directions.
Distributions of di-interstitials FI
(x,y,z,t) and divacancies FV
(x,y,z,t) in space and time have been
calculated as solutions of the system of equations, which were presented below.[25,26]
( )
( )
( )
( )
( )
, , , , , , , , ,
, , , , , ,
I I
I I I
x y z t x y z t x y z t
D x y z T D x y z T
t x x y y
Φ Φ
Φ Φ Φ
= + +
( )
( )
( ) ( )
1
0
, , ,
, , , , , , , , ,
z
I
I
L
S
I
S I
D
x y z t
D x y z T x y z t x y W t dW
z z x kT
Φ
Φ
Φ ∂
+ Ω ∇ Φ +
∂
∫
( ) ( ) ( ) ( )
2
1 ,
0
, , , , , , , , , , , ,
z
I
L
S
S I I I
D
x y z t x y W t dW k x y z T I x y z t
y kT
Φ
∂
Ω ∇ Φ + +
∂
∫
( ) ( ) ( )
2 2 2
, , , , , , , , ,
I I I
S S S
D D D
x y z t x y z t x y z t
x V kT x y V kT y z V k T z
Φ Φ Φ
∂ ∂ ∂
∂ ∂ ∂
+ + +
∂ ∂ ∂ ∂ ∂ ∂
( ) ( )
, , , , , ,
I
k x y z T I x y z t (5)
( )
( )
( )
( )
( )
, , , , , , , , ,
, , , , , ,
V V
V V V
x y z t x y z t x y z t
D x y z T D x y z T
t x x y y
Φ Φ
Φ Φ Φ
= + +
( )
( )
( ) ( )
1
0
, , ,
, , , , , , , , ,
z
V
V
L
S
V
S V
D
x y z t
D x y z T x y z t x y W t dW
z z x kT
Φ
Φ
Φ ∂
+ Ω ∇ Φ +
∂
∫
( ) ( ) ( ) ( )
2
1 ,
0
, , , , , , , , , , , ,
z
V
L
S
S V V V
D
x y z t x y W t dW k x y z T V x y z t
y kT
Φ
∂
Ω ∇ Φ + +
∂
∫
( ) ( ) ( )
2 2 2
, , , , , , , , ,
V V V
S S S
D D D
x y z t x y z t x y z t
x V kT x y V kT y z V kT z
Φ Φ Φ
∂ ∂ ∂
∂ ∂ ∂
+ + +
∂ ∂ ∂ ∂ ∂ ∂
( ) ( )
, , , , , ,
V
k x y z T V x y z t .
Initial and boundary conditions for above equations takes the form
( )
0
, , ,
0
I
x
x y z t
x
=
Φ
= ,
( )
, , ,
0
x
x L
I x y z t
x
=
= ,
( )
0
, , ,
0
y
I x y z t
y
=
= ,
6. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 20
( )
, , ,
0
I
y Ly
x y z t
y
=
Φ
= ,
( )
0
, , ,
0
I
z
x y z t
z
=
Φ
= ,
( )
, , ,
0
z
I
z L
x y z t
z
=
Φ
= ,
( )
0
, , ,
0
V
x
x y z t
x
=
Φ
= ,
( )
, , ,
0
x
V
x L
x y z t
x
=
Φ
= ,
( )
0
, , ,
0
V
y
x y z t
y
=
Φ
= ,
(6)
( )
, , ,
0
y
V
y L
x y z t
y
=
Φ
= , ( )
0
, , ,
0
V
z
x y z t
z
=
Φ
= ,
( )
, , ,
0
z
V
z L
x y z t
z
=
Φ
= ,
FI
(x,y,z,0)=fFI
(x,y,z), FV
(x,y,z,0)=fFV
(x,y,z).
Functions DFIS
(x,y,z,T), DFVS
(x,y,z,T), DFI
(x,y,z,T), and DFV
(x,y,z,T) describe dependences of surficial
and volumetric diffusions of complexes of radiation defects on coordinate ant temperature; functions
kI
(x,y,z,T) and kV
(x,y,z,T) describe analogous dependences of parameters of decay of the above complexes.
We determined chemical potential m1
by the following relation.[20]
m1
=E(z)Wsij
[uij
(x,y,z,t)+uji
(x,y,z,t)]/2.(7)
Function E(z) describes spatial dependences of Young modulus; value sij
describes tensor of stress; value
1
2
j
i
ij
j i
u
u
u
x x
∂
∂
= +
∂ ∂
describes tensor of deformation; values ui
, and uj
describe the displacement vector
( )
, , ,
u x y z t
components ux
(x,y,z,t), uy
(x,y,z,t), and uz
(x,y,z,t); xi
, xj
are the coordinate x, y, z. The Eq. (3)
could be transform to the following form
( )
( ) ( ) ( ) ( )
, , , , , ,
, , , , , ,
1
, , ,
2
j j
i i
j i j i
u x y z t u x y z t
u x y z t u x y z t
x y z t
x x x x
∂ ∂
∂ ∂
= + + −
∂ ∂ ∂ ∂
( )
( )
( )
( ) ( ) ( ) ( )
0 0 0
, , ,
3 , , ,
1 2 2
ij k
ij ij
k
z u x y z t
K z z T x y z t T E z
z x
∂ Ω
+ − − −
− ∂
.
Value s describes value of coefficient of Poisson; value e0
= (as
-aEL
)/aEL
describes value of mismatch
parameter, where parameters as
, aEL
describes value of lattice distances in the considered substrate and
the epitaxial layer, respectively; parameter K describes value of the uniform compression modulus;
parameter b describes value of thermal expansion coefficient; parameter Tr
describes value of equilibrium
temperature, which we consider as room temperature. We consider components of displacement vector
as solutions of the following equations.[21]
( )
( ) ( ) ( ) ( )
2
2
, , ,
, , , , , , , , ,
xy
x xx xz
x y z t
u x y z t x y z t x y z t
z
t x y z
∂
∂ ∂ ∂
= + +
∂ ∂ ∂ ∂
( )
( ) ( ) ( ) ( )
2
2
, , , , , , , , , , , ,
y yx yy yz
u x y z t x y z t x y z t x y z t
z
t x y z
∂ ∂ ∂ ∂
= + +
∂ ∂ ∂ ∂
( )
( ) ( ) ( ) ( )
2
2
, , ,
, , , , , , , , ,
zy
z zx zz
x y z t
u x y z t x y z t x y z t
z
t x y z
∂
∂ ∂ ∂
= + +
∂ ∂ ∂ ∂
.
Here
( )
( )
( ) ( ) ( )
( )
, , ,
, , , , , ,
3
2 1
j ij
i k
ij ij
j i k
u x y z t
E z u x y z t u x y z t
K z
x x x
z
∂
∂ ∂
= + − + ×
∂ ∂ ∂
+
7. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 21
( )
( ) ( ) ( )
, , ,
, , ,
k
r
k
u x y z t
z K z T x y z t T
x
∂
− −
∂
, where function r(z) describes the density of materials of
heterostructure and parameter, dij
describes symbol of Kronecker. Accounting of the relation for sij
in the
last system of the equation leads to the following relation
( )
( )
( )
( )
( )
( )
( )
( )
( )
2 2
2 2
, , , 5 , , ,
6 1 3 1
x x
u x y z t E z u x y z t E z
z K z K z
t x
z z
∂ ∂
= + + − ×
∂ ∂
+ +
( ) ( )
( )
( ) ( )
( )
( )
( )
2 2 2
2 2
, , , , , , , , ,
2 1 3 1
y y z
u x y z t u x y z t
E z u x y z t E z
K z
x y y z
z z
∂ ∂ ∂
+ + + + ×
∂ ∂ ∂ ∂
+ +
( )
( ) ( )
( )
2
, , , , , ,
z
u x y z t T x y z t
K z z
x z x
∂ ∂
−
∂ ∂ ∂
( )
( ) ( )
( )
( ) ( ) ( )
2 2 2
2 2
, , , , , , , , , , , ,
2 1
y y x
u x y z t u x y z t
E z u x y z t T x y z t
z
t x x y y
z
∂ ∂ ∂ ∂
= + − ×
∂ ∂ ∂ ∂ ∂
+
( ) ( )
( )
( )
( ) ( ) ( )
2
2
, , , , , ,
, , ,
2 1
y y
z
u x y z t u x y z t
E z u x y z t
K z z
z z y y
z
∂ ∂
∂
∂
+ + + ×
∂ ∂ ∂ ∂
+
(8)
( )
( )
( ) ( )
( )
( )
( )
( )
( )
2 2
, , , , , ,
5
12 1 6 1
y y
u x y z t u x y z t
E z E z
K z K z K z
y z x y
z z
∂ ∂
+ + − +
∂ ∂ ∂ ∂
+ +
( )
( ) ( )
( )
( ) ( ) ( )
2 2 2 2
2 2 2
, , , , , , , , , , , ,
2 1
z z z x
u x y z t E z u x y z t u x y z t u x y z t
z
t x y x z
z
∂ ∂ ∂ ∂
= + + +
∂ ∂ ∂ ∂ ∂
+
( )
( )
( ) ( ) ( )
2
, , , , , ,
, , , , , ,
y y
x x
u x y z t u x y z t
u x y z t u x y z t
K z
y z z x y z
∂ ∂
∂ ∂
∂
+ + + +
∂ ∂ ∂ ∂ ∂ ∂
( )
( )
( ) ( ) ( ) ( )
, , ,
, , , , , , , , ,
1
6
6 1
y
z x z
u x y z t
E z u x y z t u x y z t u x y z t
z z z x y z
∂
∂ ∂ ∂
∂
− − − −
∂ + ∂ ∂ ∂ ∂
( ) ( )
( )
, , ,
T x y z t
K z z
z
∂
∂
.
Conditions for the above equations take the form
( )
0, , ,
0
u y z t
x
∂
=
∂
;
( )
, , ,
0
x
u L y z t
x
∂
=
∂
;
( )
,0, ,
0
u x z t
y
∂
=
∂
;
( )
, , ,
0
y
u x L z t
y
∂
=
∂
;
( )
, ,0,
0
u x y t
z
∂
=
∂
;
( )
, , ,
0
z
u x y L t
z
∂
=
∂
; ( ) 0
, , ,0
u x y z u
=
; ( ) 0
, , ,
u x y z u
∞ =
.
8. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 22
We calculate dopant and radiation defects concentration distribution in space and time by the solution
of the Eqs. (1), (3), and (5) using the standard method of averaging of function corrections.[28]
First of
all, we transform the Eqs. (1), (3), and (5) to the following form with accounting initial conditions of the
above concentrations
( ) ( ) ( ) ( )
, , , , , , , , , , , ,
C x y z t C x y z t C x y z t C x y z t
D D D
t x x y y z z
∂ ∂ ∂ ∂
∂ ∂ ∂
= + + +
∂ ∂ ∂ ∂ ∂ ∂ ∂
(1a)
( ) ( )
2 2
, , , , , ,
( , , ) ( )
C S C S
c
D D
x y z t x y z t
f x y z t
y V kT y z V kT z
+ + + +
( )
( ) ( )
2
0
, , ,
, , , , , ,
z
L
C S S
S
D x y z t D
x y z t C x y W t dW
z V kT z x kT
∂
+ Ω ∇ +
∂
∫
( ) ( )
0
, , , , , ,
z
L
S
S
D
x y z t C x y z t dW
y kT
∂
Ω ∇
∂
∫
( )
( )
( )
( )
( )
, , , , , , , , ,
, , , , , ,
I I
I x y z t I x y z t I x y z t
D x y z T D x y z T
t x x y y
= + +
( )
( )
( ) ( )
1
0
, , ,
, , , , , , , , ,
z
L
IS
I S
I x y z t D
D x y z T x y z t I x y W t dW
z z x kT
∂
+ Ω ∇ +
∂
∫
( ) ( ) ( ) ( )
2
1 ,
0
, , , , , , , , , , , ,
z
L
IS
S I I
D
x y z t I x y W t dW k x y z T I x y z t
y kT
∂
Ω ∇ − −
∂
∫
( ) ( ) ( ) ( ) ( )
, , , , , , , , , , , ,
I V I
k x y z T I x y z t V x y z t f x y z t
+ (3a)
( )
( )
( )
( )
( )
, , , , , , , , ,
, , , , , ,
V V
V x y z t V x y z t V x y z t
D x y z T D x y z T
t x x y y
= + +
( )
( )
( ) ( )
1
0
, , ,
, , , , , , , , ,
z
L
VS
V S
V x y z t D
D x y z T x y z t V x y W t dW
z z x kT
∂
+ Ω ∇ +
∂
∫
( ) ( ) ( ) ( )
2
1 ,
0
, , , , , , , , , , , ,
z
L
IS
S V V
D
x y z t I x y W t dW k x y z T I x y z t
y kT
∂
Ω ∇ − −
∂
∫
( ) ( ) ( ) ( ) ( )
, , , , , , , , , , , ,
I V V
k x y z T I x y z t V x y z t f x y z t
+
( )
( )
( )
( )
( )
, , , , , , , , ,
, , , , , ,
I I
I I I
x y z t x y z t x y z t
D x y z T D x y z T
t x x y y
Φ Φ
Φ Φ Φ
= + +
9. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 23
( )
( )
( ) ( )
1
0
, , ,
, , , , , , , , ,
z
I
I
L
S
I
S I
D
x y z t
D x y z T x y z t x y W t dW
z z x kT
Φ
Φ
Φ ∂
+ Ω ∇ Φ +
∂
∫
( ) ( ) ( ) ( )
1
0
, , , , , , , , , , , ,
z
I
L
S
S I I
D
x y z t x y W t dW k x y z T I x y z t
y kT
Φ
∂
Ω ∇ Φ + +
∂
∫
( ) ( ) ( )
2 2 2
, , , , , , , , ,
I I I
S S S
D D D
x y z t x y z t x y z t
x V kT x y V kT y z V kT z
Φ Φ Φ
∂ ∂ ∂
∂ ∂ ∂
+ + +
∂ ∂ ∂ ∂ ∂ ∂
( ) ( ) ( ) ( )
2
, , , , , , , , ,
I
I I
k x y z T I x y z t f x y z t
Φ
+ (5a)
( )
( )
( )
( )
( )
, , , , , , , , ,
, , , , , ,
V V
V V V
x y z t x y z t x y z t
D x y z T D x y z T
t x x y y
Φ Φ
Φ Φ Φ
= + +
( )
( )
( ) ( )
1
0
, , ,
, , , , , , , , ,
z
V
V
L
S
V
S V
D
x y z t
D x y z T x y z t x y W t dW
z z x kT
Φ
Φ
Φ ∂
+ Ω ∇ Φ +
∂
∫
( ) ( ) ( ) ( )
1
0
, , , , , , , , , , , ,
z
I
L
S
S I V
D
x y z t x y W t dW k x y z T V x y z t
y kT
Φ
∂
Ω ∇ Φ + +
∂
∫
( ) ( ) ( )
2 2 2
, , , , , , , , ,
V V V
S S S
D D D
x y z t x y z t x y z t
x V kT x y V kT y z V kT z
Φ Φ Φ
∂ ∂ ∂
∂ ∂ ∂
+ + +
∂ ∂ ∂ ∂ ∂ ∂
( ) ( ) ( ) ( )
2
, , , , , , , , ,
V
V V
k x y z T V x y z t f x y z t
Φ
+
.
Now we consider not yet known average values a1r
instead of radiation defects and dopant concentrations
in right sides of Eqs. (1a), (3a), and (5a). The replacement gives a possibility to obtain equations for the
first-order approximations of the required concentrations in the following form
( )
( ) ( )
1
1 1 1 1
, , ,
, , , , , ,
S S
C S C S
C x y z t D D
z x y z t z x y z t
t x kT y kT
∂
∂ ∂
=
Ω ∇ + Ω ∇ +
∂ ∂ ∂
( ) ( )
( ) ( )
2 2
, , , , , ,
, ,
C S C S
C
D D
x y z t x y z t
f x y z t
x V kT x y V kT y
+ + +
( )
2 , , ,
C S
D x y z t
z V kT z
(1b)
( )
( ) ( )
1
1 1
, , ,
, , , , , ,
IS IS
I S I S
I x y z t D D
z x y z t z x y z t
t x kT y kT
∂ ∂
=
Ω ∇ + Ω ∇ +
∂ ∂
( ) ( ) ( )
2 2 2
, , , , , , , , ,
I S I S I S
D D D
x y z t x y z t x y z t
x V kT x y V kT y z V kT z
∂ ∂ ∂
∂ ∂ ∂
+ + +
∂ ∂ ∂ ∂ ∂ ∂
10. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 24
( ) ( ) ( ) ( )
2
1 , 1 1 ,
, , , , , , , ,
I I I I I V I V
f x y z t k x y z T k x y z T
− − (3b)
( )
( ) ( )
1
1 1 1 1
, , ,
, , , , , ,
VS VS
V S V S
V x y z t D D
z x y z t z x y z t
t x kT y kT
∂ ∂
=
Ω ∇ + Ω ∇ +
∂ ∂
( ) ( ) ( )
2 2 2
, , , , , , , , ,
V S V S V S
D D D
x y z t x y z t x y z t
x V kT x y V kT y z V kT z
∂ ∂ ∂
∂ ∂ ∂
+ + +
∂ ∂ ∂ ∂ ∂ ∂
( ) ( ) ( ) ( )
2
1 , 1 1 ,
, , , , , , , ,
V V V V I V I V
f x y z t k x y z T k x y z T
− −
( )
( ) ( )
1
1 1 1 1
, , ,
, , , , , ,
I I
I I
S S
I
S S
D D
x y z t
z x y z t z x y z t
t x kT y kT
Φ Φ
Φ Φ
Φ ∂ ∂
=
Ω ∇ + Ω ∇ +
∂ ∂
( ) ( ) ( )
2 2 2
, , , , , , , , ,
I I I
S S S
D D D
x y z t x y z t x y z t
x V kT x y V kT y z V kT z
Φ Φ Φ
∂ ∂ ∂
∂ ∂ ∂
+ + +
∂ ∂ ∂ ∂ ∂ ∂
( ) ( ) ( ) ( ) ( ) ( )
2
,
, , , , , , , , , , , , , ,
I I I I
f x y z t k x y z T I x y z t k x y z T I x y z t
Φ + + (5b)
( )
( ) ( )
1
1 1 1 1
, , ,
, , , , , ,
V V
V V
S S
V
S S
D D
x y z t
z x y z t z x y z t
t x kT y kT
Φ Φ
Φ Φ
Φ
∂ ∂
=
Ω ∇ + Ω ∇ +
∂ ∂
( ) ( ) ( )
2 2 2
, , , , , , , , ,
V V V
S S S
D D D
x y z t x y z t x y z t
x V kT x y V kT y z V kT z
Φ Φ Φ
∂ ∂ ∂
∂ ∂ ∂
+ + +
∂ ∂ ∂ ∂ ∂ ∂
( ) ( ) ( ) ( ) ( ) ( )
2
,
, , , , , , , , , , , , , ,
V V V V
f x y z t k x y z T V x y z t k x y z T V x y z t
Φ + +
.
Integration of the left and right sides of the Eqs. (1b), (3b), and (5b) on time gives us the possibility to
obtain relations for above approximation in this form
( ) ( )
( ) ( )
( )
2
1 1 1 2 2
* *
0
, , , , , ,
, , , , , , 1
t
C S L
V x y z V x y z
z
C x y z t D x y z T
x kT V V
∂
=
Ω + + ×
∂
∫
( )
( )
( )
( )
1 1
1 1
0
, , , 1 , , , 1
, , , , , ,
t
S C S C
S C S L
x y z d D x y z T
P x y z T y P x y z T
∂
∇ + + + +
∂
∫
( )
( ) ( )
( )
2
1 1 2 2
* *
0
, , , , , ,
, , , 1
t
C S
S
D
V x y z V x y z
z
x y z d
kT V x V kT
V
Ω∇ + + + ×
∫
( ) ( ) ( )
2 2 2
0 0
, , , , , , , , ,
t t
C S C S
D D
x y z x y z x y z
d d d
x y V kT y z V kT z
+ + +
∫ ∫
11. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 25
( )
, ,
C
f x y z (1c)
( ) ( ) ( )
1 1 1 1 1
0 0
, , , , , , , , ,
t t
IS IS
I S I S
D D
I x y z t z x y z d z x y z d
x kT y kT
∂ ∂
= Ω ∇ + Ω ∇ +
∂ ∂
∫ ∫
( ) ( ) ( )
2 2 2
0 0 0
, , , , , , , , ,
t t t
I S I S I S
D D D
x y z t x y z t x y z t
d d d
x V kT x y V kT y z V kT z
∂ ∂ ∂
∂ ∂ ∂
+ + +
∂ ∂ ∂ ∂ ∂ ∂
∫ ∫ ∫
( ) ( ) ( )
2
1 , 1 1 ,
0 0
, , , , , , , ,
t t
I I I I I V I V
f x y z k x y z T d k x y z T d
− −
∫ ∫ (3c)
( ) ( ) ( )
1 1 1 1 1
0 0
, , , , , , , , ,
t t
IS IS
V S V S
D D
V x y z t z x y z d z x y z d
x kT y kT
∂ ∂
= Ω ∇ + Ω ∇ +
∂ ∂
∫ ∫
( ) ( ) ( )
2 2 2
0 0 0
, , , , , , , , ,
t t t
V S V S V S
D D D
x y z t x y z t x y z t
d d d
x V kT x y V kT y z V kT z
∂ ∂ ∂
∂ ∂ ∂
+ + +
∂ ∂ ∂ ∂ ∂ ∂
∫ ∫ ∫
( ) ( ) ( )
2
1 , 1 1 ,
0 0
, , , , , , , ,
t t
V V V V I V I V
f x y z k x y z T d k x y z T d
− −
∫ ∫
( ) ( ) ( )
1 1 1 1
0 0
, , , , , , , , ,
I I
I
t t
S S
I S S
D D
x y z t z x y z d x y z d
x kT x kT
Φ Φ
Φ
∂ ∂
Φ = Ω ∇ +Ω ∇ ×
∂ ∂
∫ ∫
( )
( ) ( )
2 2
1
0 0
, , , , , ,
, , I I
I I
t t
S S
D D
x y z x y z
z f x y z d d
x V kT x y V kT y
Φ Φ
Φ Φ
∂ ∂
∂ ∂
+ + + +
∂ ∂ ∂ ∂
∫ ∫ (5c)
( )
( ) ( )
2
0 0
, , ,
, , , , , ,
I
t t
S
I
D x y z
d k x y z T I x y z d
z V kT z
Φ ∂
∂
+ +
∂ ∂
∫ ∫
( ) ( )
2
,
0
, , , , , ,
t
I I
k x y z T I x y z d
∫
( ) ( ) ( )
1 1 1 1
0 0
, , , , , , , , ,
V V
V
t t
S S
V S S
D D
x y z t z x y z d x y z d
x kT x kT
Φ Φ
Φ
∂ ∂
Φ = Ω ∇ +Ω ∇ ×
∂ ∂
∫ ∫
( )
( ) ( )
2 2
1
0 0
, , , , , ,
, , V V
V V
t t
S S
D D
x y z x y z
z f x y z d d
x V kT x y V kT y
Φ Φ
Φ Φ
∂ ∂
∂ ∂
+ + + +
∂ ∂ ∂ ∂
∫ ∫
( )
( ) ( )
2
0 0
, , ,
, , , , , ,
V
t t
S
V
D x y z
d k x y z T V x y z d
z V kT z
Φ ∂
∂
+ +
∂ ∂
∫ ∫
12. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 26
( ) ( )
2
,
0
, , , , , ,
t
V V
k x y z T V x y z d
∫ .
Followingstandardrelationgivesapossibilitytocalculateaveragevaluesofthefirst-orderapproximations
of dopant and radiation defects concentrations.[28]
( )
1 1
0 0 0 0
1
, , ,
y
x z
L
L L
x y z
x y z t d z d y d xd t
L L L
Θ
=
Θ ∫ ∫ ∫ ∫ (9)
Substitution of the above first-order approximations into relation Eqs. (9) leads to the following results
( )
1
0 0 0
1
, ,
y
x z
L
L L
C C
x y z
f x y z d z d y d x
L L L
= ∫ ∫ ∫ ,
( )2 2
3 1
3
1 2
4 4
4
4
x y z
I
a B L L L a
a A
B
a a
Θ + Θ
+
= − + −
3
4
4
a A
a
+
− ,
( )
1 1 00
00 1 0 0 0
1
, ,
y
x z
L
L L
V I I II x y z
IV I
f x y z d z d y d x S L L L
S
Θ
− − Θ
∫ ∫ ∫ .
Here ( ) ( ) ( ) ( )
, 1 1
0 0 0 0
, , , , , , , , ,
y
x z
L
L L
i j
ij
S t k x y z T I x y z t V x y z t d z d y d xd t
Θ
= Θ −
∫ ∫ ∫ ∫ , 4 00
II
a S
= ×
( )
2
00 00 00
IV II VV
S S S
−
,
2
3 00 00 00 00 00
IV II IV II VV
a S S S S S
= + − , ( )
2
0 0 0
, ,
y
x z
L
L L
V
a f x y z d z d y d x
= ×
∫ ∫ ∫
( )
2 2 2 2 2 2 2
00 00 00 00 00 00
0 0 0
2 , ,
y
x z
L
L L
IV IV IV x y z VV II I x y z VV
S S S L L L S S f x y z d z d y d x L L L S
+ Θ + − Θ −
∫ ∫ ∫
( )
2
00
0 0 0
, ,
y
x z
L
L L
IV I
S f x y z d z d y d x
∫ ∫ ∫ , ( )
1 00
0 0 0
, ,
y
x z
L
L L
IV I
a S f x y z d z d y d x
= ∫ ∫ ∫ , 0 00
VV
a S
= ×
( )
2
0 0 0
, ,
y
x z
L
L L
I
f x y z d z d y d x
∫ ∫ ∫ ,
2
2 3 2
2
4 4
8 4
a a
A y
a a
= + Θ − Θ , 2 3
2 3
4
6
a
B q p q
a
Θ
= + + − −
2 3
3
q p q
+ +
,
2
3 3 3
2 2
1 3 0 3
2 2
0 2
2 2 3
4 4 4 4 4
4 4
24 8 54
x y z
a a a a
a a
q a L L L a
a a a a a
Θ Θ
= − Θ − Θ Θ − Θ − −
4 2
2 2 2 1
2
4
8
x y z
a
L L L
a
Θ , 0 4 1 3
2 2
2
4 4
4
12 18
x y z
a a L L L a a a
p
a a
− Θ Θ
=
Θ − ,
( )
20
1
1
0 0 0
1
, ,
y
x z
I I
L
L L
II
I
x y z x y z x y z
S
R
f x y z d z d y d x
L L L L L L L L L
Φ Φ
= + +
Θ Θ ∫ ∫ ∫
( )
20
1
1
0 0 0
1
, ,
y
x z
V V
L
L L
VV
V
x y z x y z x y z
S
R
f x y z d z d y d x
L L L L L L L L L
Φ Φ
= + +
Θ Θ ∫ ∫ ∫ .
13. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 27
Here ( ) ( ) ( )
1
0 0 0 0
, , , , , ,
y
x z
L
L L
i
i I
R t k x y z T I x y z t d z d y d xd t
Θ
= Θ −
∫ ∫ ∫ ∫ .
Now, we calculate approximations with the second and higher (n-th) orders of considered concentrations
using the method of averaging of function corrections in the classical form.[28]
The considered procedure
leads to the replacement of considered concentrations on the right sides of Eqs. (1c), (3c), and (5c) on the
following sum anr
+rn−1
(x,y,z,t). In this situation, one can obtain the following equations for the second-
order approximations of the above concentrations
( ) ( )
( )
( ) ( )
( )
2
2 1
2
1 2 2
* *
, , ,
, , , , , , , , ,
1 1
, , ,
C C x y z t
C x y z t V x y z t V x y z t
t x P x y z T V V
+
∂ ∂
= + + + ×
∂ ∂
( )
( ) ( ) ( )
( )
( )
2
1 1
1 2 2
* *
, , , , , , , , , , , ,
, , , 1
L
C x y z t V x y z t V x y z t C x y z t
D x y z T
x y V y
V
∂ ∂
∂
× + + + ×
∂ ∂ ∂
( )
( )
( )
( ) ( )
( )
2
2 1
1 2 2
* *
, , , , , , , , ,
, , , 1 1
, , ,
C
L
C x y z t V x y z t V x y z t
D x y z T
P x y z T z V V
+ ∂
+ + + + ×
∂
( )
( ) ( )
( )
( ) ( )
2 1
1
, , ,
, , ,
, , , 1 , ,
, , ,
C
L C
C x y z t
C x y z t
D x y z T f x y z t
z P x y z T
+
∂
+ + +
∂
( ) ( ) ( )
2 2 2
, , , , , , , , ,
C S C S C S
D D D
x y z t x y z t x y z t
x V kT x y V kT y z V kT z
+ + +
( ) ( )
1 2
0
, , , , , ,
z
L
S
S C
D
x y z t C x y W t dW
x kT
∂
Ω ∇ + +
∂
∫
( ) ( )
1 2
0
, , , , , ,
z
L
S
S C
D
x y z t C x y W t dW
y kT
∂
Ω ∇ +
∂
∫ (1d)
( )
( )
( )
( )
( )
2 1 1
, , , , , , , , ,
, , , , , ,
I I
I x y z t I x y z t I x y z t
D x y z T D x y z T
t x x y y
= + +
( )
( )
( ) ( ) ( )
2
1
, 1 1 ,
, , ,
, , , , , , , , , , , ,
I I I I I V
I x y z t
D x y z T k x y z T I x y z t k x y z T
z z
− + − ×
( ) ( ) ( ) ( )
1 1 1 1 2 1
0
, , , , , , , , , , , ,
z
L
I V S I
I x y z t V x y z t x y z t I x y W t dW
x
∂
+ + + Ω ∇ + ×
∂
∫
( ) ( )
( )
2
2 1
0 0
, , ,
, , , , , ,
z
L t
IS IS
S I
x y z t
D D
x y z t I x y W t dW
kT y kT x x
∂
∂ ∂
+ Ω ∇ + + ×
∂ ∂ ∂
∫ ∫
14. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 28
( ) ( )
2 2
0 0
, , , , , ,
t t
I S I S I S
D D D
x y z t x y z t
d d d
V kT y V kT y z V kT z
∂ ∂
∂ ∂
+ +
∂ ∂ ∂ ∂
∫ ∫ (3d)
( )
( )
( )
( )
( )
2 1 1
, , , , , , , , ,
, , , , , ,
V V
V x y z t V x y z t V x y z t
D x y z T D x y z T
t x x y y
= + +
( )
( )
( ) ( ) ( )
2
1
, 1 1 ,
, , ,
, , , , , , , , , , , ,
V V V V I V
V x y z t
D x y z T k x y z T V x y z t k x y z T
z z
− + − ×
( ) ( ) ( ) ( )
1 1 1 1 2 1
0
, , , , , , , , , , , ,
z
L
I V S V
I x y z t V x y z t x y z t V x y W t dW
x
∂
+ + + Ω ∇ + ×
∂
∫
( ) ( )
( )
2
2 1
0 0
, , ,
, , , , , ,
z
L t
VS VS
S V
x y z t
D D
x y z t V x y W t dW
kT y kT x x
∂
∂ ∂
+ Ω ∇ + + ×
∂ ∂ ∂
∫ ∫
( ) ( )
2 2
0 0
, , , , , ,
t t
V S V S V S
D D D
x y z t x y z t
d d d
V kT y V kT y z V kT z
∂ ∂
∂ ∂
+ +
∂ ∂ ∂ ∂
∫ ∫
( )
( )
( )
( )
( )
2 1 1
, , , , , , , , ,
, , , , , ,
I I
I I I
x y z t x y z t x y z t
D x y z T D x y z T
t x x y y
Φ Φ
Φ Φ Φ
= + +
( ) ( ) ( ) ( )
2
2 1 ,
0
, , , , , , , , , , , ,
z
I
I
L
S
S I I I
D
x y z t x y W t dW k x y z T I x y z t
x kT
Φ
Φ
∂
Ω ∇ + Φ + +
∂
∫
( ) ( ) ( ) ( )
2 1
0
, , , , , , , , , , , ,
z
I
I
L
S
S I I
D
x y z t x y W t dW k x y z T I x y z t
y kT
Φ
Φ
∂
Ω ∇ + Φ + +
∂
∫
( ) ( ) ( )
2 2 2
, , , , , , , , ,
I I I
S S S
D D D
x y z t x y z t x y z t
x V kT x y V kT y z V kT z
Φ Φ Φ
∂ ∂ ∂
∂ ∂ ∂
+ + +
∂ ∂ ∂ ∂ ∂ ∂
( )
( )
( ) ( )
1 , , ,
, , , , ,
I I
I x y z t
D x y z T f x y z t
z z
Φ Φ
Φ
+
(5d)
( )
( )
( )
( )
( )
2 1 1
, , , , , , , , ,
, , , , , ,
V V
V V V
x y z t x y z t x y z t
D x y z T D x y z T
t x x y y
Φ Φ
Φ Φ Φ
= + +
( ) ( ) ( ) ( )
2
2 1 ,
0
, , , , , , , , , , , ,
z
V
V
L
S
S V V V
D
x y z t x y W t dW k x y z T V x y z t
x kT
Φ
Φ
∂
Ω ∇ + Φ + +
∂
∫
( ) ( ) ( ) ( )
2 1
0
, , , , , , , , , , , ,
z
V
V
L
S
S V V
D
x y z t x y W t dW k x y z T V x y z t
y kT
Φ
Φ
∂
Ω ∇ + Φ + +
∂
∫
15. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 29
( ) ( ) ( )
2 2 2
, , , , , , , , ,
V V V
S S S
D D D
x y z t x y z t x y z t
x V kT x y V kT y z V kT z
Φ Φ Φ
∂ ∂ ∂
∂ ∂ ∂
+ + +
∂ ∂ ∂ ∂ ∂ ∂
( )
( )
( ) ( )
1 , , ,
, , , , ,
V V
V x y z t
D x y z T f x y z t
z z
Φ Φ
Φ
+
.
The above equations could be solved by the integration of both sides of the above equations on time.
After this integration one can be obtained
( )
( )
( )
( ) ( )
( )
2
2 1
2 1 2 2
* *
0
, , , , , , , , ,
, , , 1 1
, , ,
t
C C x y z V x y z V x y z
C x y z t
x P x y z T V V
+
∂
= + + + ×
∂
∫
( )
( )
( )
( ) ( )
( )
2
1
1 2 2
* *
0
, , , , , , , , ,
, , , , , , 1
t
L L
C x y z V x y z V x y z
D x y z T d D x y z T
x y V V
∂ ∂
+ + + ×
∂ ∂
∫
( ) ( )
( )
( ) ( )
( )
2
2 1
1
1 2 2
* *
0
, , ,
, , , , , , , , ,
1 1
, , ,
t
C C x y z t
C x y z V x y z V x y z
y P x y z T z V V
+
∂ ∂
+ + + + ×
∂ ∂
∫
( )
( ) ( )
( )
( )
2 1
1
, , ,
, , ,
, , , 1 , ,
, , ,
C
L C
C x y z
C x y z
D x y z T d f x y z
z P x y z T
+
∂
+ + +
∂
( ) ( ) ( )
2 1
0 0 0
, , , , , , , , ,
z
L
t t
S
S C S
D
x y z C x y W dW d x y z
x kT y
∂ ∂
Ω ∇ + + ∇ ×
∂ ∂
∫ ∫ ∫
( )
( )
2
2 1
0
, , ,
, , ,
z
L
C S
S
C
D x y z t
D
C x y W dW d
kT x V kT x
Ω + + +
∫
( ) ( )
2 2
, , , , , ,
C S C S
D D
x y z t x y z t
y V kT y z V kT z
+
(1e)
( ) ( )
( )
( )
( )
1 1
2
0 0
, , , , , ,
, , , , , , , , ,
t t
I I
I x y z I x y z
I x y z t D x y z T d D x y z T d
x x y y
= + +
∫ ∫
( )
( )
( ) ( )
2
1
, 2 1
0 0
, , ,
, , , , , , , , ,
t t
I I I I
I x y z
D x y z T d k x y z T I x y z d
z z
− + −
∫ ∫
( ) ( ) ( ) ( )
, 2 1 2 1
0 0
, , , , , , , , , , , ,
t t
I V I V S
k x y z T I x y z V x y z d x y z
x
∂
+ + + ∇ ×
∂
∫ ∫
( ) ( ) ( )
2 1 2 1
0 0 0
, , , , , , , , ,
z z
L L
t
IS
I S I
D
I x y W dW d x y z I x y W
kT y
∂
Ω + + ∇ + ×
∂
∫ ∫ ∫
16. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 30
( ) ( )
2 2
, , , , , ,
I S I S
IS
D D
x y z t x y z t
D
d W d
k T x V kT x y V kT y
Ω + + +
( )
( )
2 , , ,
, ,
I S
I
D x y z t
f x y z
z V kT z
+
(3e)
( ) ( )
( )
( )
( )
1 1
2
0 0
, , , , , ,
, , , , , , , , ,
t t
V V
V x y z V x y z
V x y z t D x y z T d D x y z T d
x x y y
= + +
∫ ∫
( )
( )
( ) ( )
2
1
, 2 1
0 0
, , ,
, , , , , , , , ,
t t
V V V V
V x y z
D x y z T d k x y z T V x y z d
z z
− + −
∫ ∫
( ) ( ) ( ) ( )
, 2 1 2 1
0 0
, , , , , , , , , , , ,
t t
I V I V S
k x y z T I x y z V x y z d x y z
x
∂
+ + + ∇ ×
∂
∫ ∫
( ) ( ) ( )
2 1 2 1
0 0 0
, , , , , , , , ,
z z
L L
t
VS
V S V
D
V x y W dW d x y z V x y W
kT y
∂
Ω + + ∇ + ×
∂
∫ ∫ ∫
( ) ( )
2 2
, , , , , ,
V S V S
VS
D D
x y z t x y z t
D
d W d
kT x V kT x y V kT y
Ω + + +
( )
( )
2 , , ,
, ,
V S
V
D x y z t
f x y z
z V kT z
+
( ) ( )
( ) ( )
1 1
2
0 0
, , , , , ,
, , , , , ,
I
t t
I I
I
x y z x y z
x y z t D x y z T d
x x y y
Φ
Φ Φ
Φ + ×
∫ ∫
( ) ( )
( )
( )
1
0 0
, , ,
, , , , , , , , ,
I I
t t
I
S
x y z
D x y z T d D x y z T d x y z
z z x
Φ Φ
Φ ∂
+ + Ω ∇ ×
∂
∫ ∫
( ) ( )
2 1 2 1
0 0 0
, , , , , ,
z z
I I
I I
L L
t
S S
I I
D D
x y W dW d x y W dW
kT y kT
Φ Φ
Φ Φ
∂
+ Φ + Ω + Φ ×
∂
∫ ∫ ∫
( ) ( ) ( )
( )
2
2
,
0 0
, , ,
, , , , , , , , , I
t t
S
S I I
D x y z
x y z d k x y z T I x y z d d
x V kT x
Φ ∂
∂
∇ + + +
∂ ∂
∫ ∫
( ) ( )
( )
2 2
0 0
, , , , , ,
, ,
I I
I
t t
S S
D D
x y z x y z
d d f x y z
y V kT y z V kT z
Φ Φ
Φ
∂ ∂
∂ ∂
+ + +
∂ ∂ ∂ ∂
∫ ∫
( ) ( )
0
, , , , , ,
t
I
k x y z T I x y z d
∫ (5e)
17. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 31
( ) ( )
( ) ( )
1 1
2
0 0
, , , , , ,
, , , , , ,
V
t t
V V
V
x y z x y z
x y z t D x y z T d
x x y y
Φ
Φ Φ
Φ + ×
∫ ∫
( ) ( )
( )
( )
1
0 0
, , ,
, , , , , , , , ,
V V
t t
V
S
x y z
D x y z T d D x y z T d x y z
z z x
Φ Φ
Φ ∂
+ + Ω ∇ ×
∂
∫ ∫
( ) ( )
2 1 2 1
0 0 0
, , , , , ,
z z
V V
V V
L L
t
S S
V V
D D
x y W dW d x y W dW
kT y kT
Φ Φ
Φ Φ
∂
+ Φ + Ω + Φ ×
∂
∫ ∫ ∫
( ) ( ) ( )
( )
2
2
,
0 0
, , ,
, , , , , , , , , V
t t
S
S V V
D x y z
x y z d k x y z T V x y z d d
x V kT x
Φ ∂
∂
∇ + + +
∂ ∂
∫ ∫
( ) ( )
( )
2 2
0 0
, , , , , ,
, ,
V V
V
t t
S S
D D
x y z x y z
d d f x y z
y V kT y z V kT z
Φ Φ
Φ
∂ ∂
∂ ∂
+ + +
∂ ∂ ∂ ∂
∫ ∫
( ) ( )
0
, , , , , ,
t
V
k x y z T V x y z d
∫ .
The next standard relation gives a possibility to calculate average values of the second-order
approximations of the above concentrations.[28]
( ) ( )
2 2 1
0 0 0 0
1
, , , , , ,
y
x z
L
L L
x y z
x y z t x y z t d z d y d xd t
L L L
Θ
−
Θ ∫ ∫ ∫ ∫ (10)
Substitution of the second-order approximations of the considered concentrations into relation Eqs. (10)
gives a possibility to obtain relations for required average values a2r
a2C
=0, a2FI
=0, a2FV
=0,
( )2 2
3 1
3 3
2 2
4 4 4
4
4 4
x y z
V
a F L L L b
b E b E
F
b b b
Θ + Θ
+ +
= − + −
,
( )
2
2 00 2 01 10 02 11
2
01 2 00
2
V V VV V VV IV x y z V V IV
I
IV V IV
C S S S L L L S S
S S
− − + + Θ − −
=
+
.
Here
2 2
4 00 00 00 00
1 1
IV V V VV II
x y z x y z
b S S S S
L L L L L L
−
Θ Θ
, (
00 00
3 01 10
2
II VV
VV IV
x y z
S S
b S S
L L L
=
− + +
Θ
) ( ) (
2
00 00 00
01 10 01 01 10
2 2
IV VV IV
x y z IV II IV x y z VV IV
x y z x y z
S S S
L L L S S S L L L S S
L L L L L L
Θ + + + + Θ + + +
Θ Θ
)
2
00 10
3 3 3 3
IV IV
x y z
x y z
S S
L L L
L L L
Θ −
Θ
, ( ) (
00 00
2 02 11 10 01
2
II VV
VV IV V IV VV x y
x y z
S S
b S S C S S L L
L L L
= + + − − + Θ ×
Θ
) ( ) (
2 01 00 00
10 01 01 10 01
2 2 2
IV VV IV
z x y z II IV IV II IV x y
x y z x y z
S S S
L L L L S S S S S L L
L L L L L L
+ Θ + + + + + + Θ ×
Θ Θ
)( ) ( )
2 2
00 00 10
01 10 02 11 2 2 2 2
2
2 IV I IV IV
z VV x y z IV V VV IV
x y z x y z x y z
S C S S
L S L L L S C S S
L L L L L L L L L
+ Θ + − − − + − ×
Θ Θ Θ
18. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 32
00 01
IV IV
S S , ( ) (
11 02 01
1 00 01 10
2
IV VV V IV
II VV IV x y z x y
x y z x y z
S S C S
b S S S L L L L L
L L L L L L
+ +
+ + Θ + Θ ×
Θ Θ
)( ) (
2
10 01 00
10 01 01 10 01 10
2 2 3 2
IV IV IV
z II IV VV IV y z IV II
x y z x y z
S S S
L S S S S LL L S S
L L L L L L
+ + + + Θ − − + +
Θ Θ
)( )
02 11 00 01
2
x y z V VV IV I IV IV
L L L C S S C S S
Θ − − + , ( )2
00 01
0 00 02
II IV
IV VV
x y z x y z
S S
b S S
L L L L L L
= + − ×
Θ
( )( ) 2 02 11
10 01 02 11 01 01
1
2 2 V VV IV
x y z II IV V VV IV I IV IV
x y z
C S S
L L L S S C S S C S S
L L L
− −
Θ + + − − + − ×
Θ Θ
( )( )
( )
2
10 01 02 11 01
02 11
01 10 01
1
2 2
2 ,
x y z II IV V VV IV I IV
V VV IV
IV x y z II IV
x y z
L L L S S C S S C S
C S S
S L L L S S
L L L
Θ + + − − + −
Θ
− −
× Θ + +
Θ
2
1 1 1 00 20 20 11
00
I V I II II II IV
I IV
x y z x y z x y z x y z
S S S S
C S
L L L L L L L L L L L L
= + − −
Θ Θ Θ Θ ,
2
1 1 00 1 00 02 11
V I V IV V VV VV IV
C S S S S
= + − − ,
2
2 3 2
2
4 4
8 4
a a
E y
a a
= + Θ − Θ , 2
4
6
a
F
a
Θ
= +
3 3
2 3 2 3
r s r r s r
+ − − + + ,
3 3 3 2
1 3
2 2
0 0
2 3 2
4 4 4 4
4
24 54 8
x y z
b b
b b
r b L L L b
b b b b
Θ Θ Θ
= − Θ − − ×
2 4 2
2 2 2 2
3 1
2 2
4 4
4
8
x y z
b b
b L L L
b b
Θ
Θ − Θ −
, 0 4 1 3
2 2
2
4 4
4
12 18
x y z
b b L L L b b b
s
b b
− Θ Θ
=
Θ − .
Now, we calculate solutions of Eqs. (8) by the same method of averaging function corrections. Equations
for the first-order approximations of the considered components could be written as
( )
( )
( ) ( )
( )
2
1
2
, , , , , ,
x
u x y z t T x y z t
z K z z
t x
∂ ∂
= −
∂ ∂
, ( )
( )
2
1
2
, , ,
y
u x y z t
z
t
∂
=
∂
( ) ( )
( )
, , ,
T x y z t
K z z
y
∂
−
∂
, ( )
( )
( ) ( )
( )
2
1
2
, , , , , ,
z
u x y z t T x y z t
z K z z
t z
∂ ∂
= −
∂ ∂
.
The solution of the above equations could be obtained by integration both their sides. Result of this
integration takes the form
( ) ( )
( )
( )
( )
1 0
0 0
, , , , , ,
t
x x
z
u x y z t u K z T x y z d d
z x
∂
=
+ −
∂ ∫∫
( )
( )
( )
( )
0 0
, , ,
z
K z T x y z d d
z x
∞
∂
∂ ∫∫ ,
19. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 33
( ) ( )
( )
( )
( )
1 0
0 0
, , , , , ,
t
y y
z
u x y z t u K z T x y z d d
z y
∂
=
+ −
∂ ∫∫
( )
( )
( )
( )
0 0
, , ,
z
K z T x y z d d
z y
∞
∂
∂ ∫∫ ,
( ) ( )
( )
( )
( )
1 0
0 0
, , , , , ,
t
z z
z
u x y z t u K z T x y z d d
z z
∂
=
+ −
∂ ∫∫
( )
( )
( )
( )
0 0
, , ,
z
K z T x y z d d
z z
∞
∂
∂ ∫∫ .
Equations for the second-order approximations of displacement vector components could be obtained
framework standard procedure of the method of averaging of function corrections[28]
and could be
written as
( )
( )
( )
( )
( )
( )
( )
( )
( )
( )
2
2 2
1
2 1
2 2
, , ,
, , , 5 , , ,
6 1 3 1
y
x x
u x y z t
u x y z t E z u x y z t E z
z K z K z
t x x y
z z
∂
∂ ∂
= + + − +
∂ ∂ ∂ ∂
+ +
( ) ( )
( )
( ) ( ) ( )
2 2 2
1 1 1
2 2
, , , , , , , , , , , ,
2 1
y y z
u x y z t u x y z t
E z u x y z t T x y z t
x y y z x
z
∂ ∂ ∂ ∂
+ + − ×
∂ ∂ ∂ ∂ ∂
+
( ) ( ) ( )
( )
( )
( )
2
1 , , ,
3 1
z
E z u x y z t
K z z K z
x z
z
∂
+ +
∂ ∂
+
( )
( ) ( )
( )
( ) ( ) ( )
2 2 2
2 1 1
2 2
, , , , , , , , , , , ,
2 1
y y x
u x y z t u x y z t
E z u x y z t T x y z t
z
t x x y y
z
∂ ∂ ∂ ∂
= + − ×
∂ ∂ ∂ ∂ ∂
+
( ) ( )
( )
( )
( ) ( ) ( )
2
1 1
1
2
, , , , , ,
, , ,
2 1
y y
z
u x y z t u x y z t
E z u x y z t
K z z
z z y y
z
∂ ∂
∂
∂
+ + + ×
∂ ∂ ∂ ∂
+
( )
( )
( ) ( )
( )
( )
( )
( )
( )
2 2
1 1
, , , , , ,
5
12 1 6 1
y y
u x y z t u x y z t
E z E z
K z K z K z
y z x y
z z
∂ ∂
+ + − +
∂ ∂ ∂ ∂
+ +
( )
( ) ( )
( )
( ) ( ) ( )
2 2 2 2
2 1 1 1
2 2 2
, , , , , , , , , , , ,
2 1
z z z x
u x y z t E z u x y z t u x y z t u x y z t
z
t x y x z
z
∂ ∂ ∂ ∂
= + + +
∂ ∂ ∂ ∂ ∂
+
( )
( )
( ) ( ) ( )
2
1 1
1 1
, , , , , ,
, , , , , ,
y y
x x
u x y z t u x y z t
u x y z t u x y z t
K z
y z z x y z
∂ ∂
∂ ∂
∂
+ + + +
∂ ∂ ∂ ∂ ∂ ∂
( )
( )
( ) ( ) ( ) ( )
1
1 1 1
, , ,
, , , , , , , , ,
6
6 1
y
z x z
u x y z t
E z u x y z t u x y z t u x y z t
z z x y z
z
∂
∂ ∂ ∂
∂
− − − −
∂ ∂ ∂ ∂ ∂
+
20. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 34
( ) ( ) ( ) ( )
( )
( ) ( )
( )
1
1 1
, , ,
, , , , , , , , ,
1
y
x z
u x y z t
u x y z t u x y z t E z T x y z t
K z z
x y z z z
∂
∂ ∂ ∂
− − −
∂ ∂ ∂ + ∂
.
Integration of the left and right sides of the above relations on time t leads to the following result
( )
( )
( )
( )
( )
( )
( )
( )
2
2 1
2
0 0
5
1 1
, , , , , ,
6 1
t
x x
E z
u x y z t K z u x y z d d K z
z x z
z
∂
= + + −
∂
+
∫∫
( )
( )
( )
( )
( )
( )
2 2
1 1
2
0 0 0 0
, , , , , ,
2
3 1
t t
y y
E z E z
u x y z d d u x y z d d
x y z y
z
∂ ∂
+ +
∂ ∂ ∂
+
∫∫ ∫∫
( )
( ) ( )
( ) ( )
2 2
1 1
2
0 0 0 0
1 1
, , , , , ,
1
t t
z z
u x y z d d u x y z d d K z
z z z x z
∂ ∂
+ +
∂ + ∂ ∂
∫∫ ∫∫
( )
( )
( )
( )
( )
( ) ( )
2
1
2
0 0 0 0
, , , , , ,
3 1
t
x
E z z
K z T x y z d d u x y z d d
z x x
z
∞
∂ ∂
− − ×
∂ ∂
+
∫∫ ∫∫
( )
( )
( )
( )
( )
( )
( )
( )
2
1
0 0
5
1
, , ,
6 1 3 1
y
E z E z
K z K z u x y z d d
z x y
z z
∞
∂
+ − − ×
∂ ∂
+ +
∫∫
( )
( )
( ) ( )
( ) ( )
2 2
1 1
2 2
0 0 0 0
1
, , , , , ,
2 1
y z
E z
u x y z d d u x y z d d
z y z
z z
∞ ∞
∂ ∂
− + −
∂ ∂
+
∫∫ ∫∫
( )
( )
( )
( )
( ) ( )
( )
( )
2
1 0
0 0
1
, , ,
3 1
z x
E z z
K z u x y z d d u K z
z x z z
z
∞
∂
+ + + ×
∂ ∂
+
∫∫
( )
0 0
, , ,
T x y z d d
x
∞
∂
∂ ∫∫
( )
( )
( ) ( )
( ) ( )
2 2
2 1 1
2
0 0 0 0
, , , , , , , , ,
2 1
t t
y x x
E z
u x y z t u x y z d d u x y z d d
x x y
z z
∂ ∂
= + +
∂ ∂ ∂
+
∫∫ ∫∫
( )
( )
( )
( )
( )
( )
( )
( )
2
1
0 0
5
1 1
, , ,
1 12 1
t
y
K z E z
u x y z d d K z
z z x y z z
∂
+ + + ×
+ ∂ ∂
+
∫∫
( )
( )
( )
( )
( )
2
1 1
2
0 0 0 0
1
, , , , , ,
2 1
t t
x y
E z
u x y z d d u x y z d d
y z z z z
∂ ∂ ∂
+ +
∂ ∂ + ∂
∫∫ ∫∫
( ) ( )
( )
( )
( )
( )
( )
1
0 0 0 0
, , , , , ,
6 1
t t
z
z E z
u x y z d d K z T x y z d d
y z z
∂
− − −
∂
+
∫∫ ∫∫
21. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 35
}
( )
( )
( )
( )
( )
2 2
1 1
2
0 0 0 0
1
( ) , , , , , ,
2
t
y x
E z
K z u x y z d d u x y z d d
z y z z x
∞
∂ ∂
− − +
∂ ∂ ∂
∫∫ ∫∫
( )
( )
( )
( )
( )
( )
( )
( )
2
1
0 0 0 0
1
, , , , , ,
1
x
z K z
u x y z d d K z T x y z d d
x y z z z
∞ ∞
∂
− − ×
∂ ∂ +
∫∫ ∫∫
( )
( )
( )
( )
( )
2 2
1 1
2
0 0 0 0
5
1
, , , , , ,
12 1
y x
E z
u x y z d d u x y z d d
x y z y z
∞ ∞
∂ ∂
− +
∂ ∂ ∂
+
∫∫ ∫∫
( )}
( )
( )
( ) ( )
1 1
0 0 0 0
, , , , , ,
1
y z
E z
K z u x y z d d u x y z d d
z z z y
∞ ∞
∂ ∂ ∂
− + ×
∂ + ∂ ∂
∫∫ ∫∫
( ) ( )
( )
( )
( )
( )
2
1 0
0 0
1 1
, , ,
2 6 1
y y
E z
K z u x y z d d u
z z y z
z
∞
∂
− − +
∂ ∂
+
∫∫
( )
( )
( )
( ) ( )
2 2
1 1
2 2
0 0 0 0
, , , , , , , , ,
2 1
z z z
E z
u x y z t u x y z d d u x y z d d
x y
z
∞ ∞
∂ ∂
= + +
∂ ∂
+
∫∫ ∫∫
( ) ( )
( ) ( )
2 2
1 1
0 0 0 0
1 1
, , , , , ,
x y
u x y z d d u x y z d d
x z y z z z
∞ ∞
∂ ∂
+ + ×
∂ ∂ ∂ ∂
∫∫ ∫∫
( ) ( ) ( )
1 1
0 0 0 0
, , , , , ,
x x
K z u x y z d d u x y z d d
z x y
∞ ∞
∂ ∂ ∂
+ +
∂ ∂ ∂
∫∫ ∫∫
( )
( )
( )
( )
( )
1 1
0 0 0 0
1
, , , 6 , , ,
6 1
x z
E z
u x y z d d u x y z d d
z z z z z
∞ ∞
∂ ∂ ∂
+ −
∂ ∂ + ∂
∫∫ ∫∫
( ) ( ) ( )
1 1 1
0 0 0 0 0 0
, , , , , , , , ,
x y z
u x y z d d u x y z d d u x y z d d
x y z
∞ ∞ ∞
∂ ∂ ∂
− − −
∂ ∂ ∂
∫∫ ∫∫ ∫∫
( )
( )
( )
( ) 0
0 0
, , , z
z
K z T x y z d d u
z z
∞
∂
+
∂ ∫∫ .
In this paper, we calculate distributions of concentration of dopant and radiation defects in space and
time using the second-order approximation framework method of averaging of function corrections.
We also calculate distributions of components of displacement vector in space and time framework the
same approximation. Usually, the second-order approximation is enough good approximation to obtain
some quantitative results and to make the qualitative analysis. All obtained results have been checked by
comparison with the results of numerical simulations.
DISCUSSION
Now, we will be analyzing the redistributions of radiation defects and dopant during annealing. In
this situation, we take into account the influence of modification of porosity and mismatch-induced
22. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 36
stress on the redistribution of radiation defects and dopant. We present several spatial distributions
of concentrations of dopant in heterostructures, as shown in Figures 2 and 3. Figure 2 corresponds to
the diffusion type of doping. Figure 3 corresponds to ion type of doping. All distributions of dopant
correspond to the larger value of dopant diffusion coefficient in comparison with the nearest areas. One
can find that inhomogeneity of heterostructure leads to increasing homogeneity of dopant in the doped
area of the epitaxial layer. However, it should be noted that optimization of annealing of dopant and/or
radiation defects required to obtain a compromise between increasing of homogeneity of distribution of
concentration of dopant in the required area and increasing.
Figure 2: Spatial distributions of infused dopant concentration in the considered heterostructure in the perpendicular direction
to interface between epitaxial layer and substrate. The larger number of curves corresponds to the larger difference between
values of dopant diffusion coefficient in the heterostructure. Value of dopant diffusion coefficient in the substrate is smaller,
than the value of dopant diffusion coefficient in the epitaxial layer
Figure 3: Spatial distributions of implanted dopant concentration in the considered heterostructure in the perpendicular
direction to interface between epitaxial layer and substrate. Curves 1 and 3 were calculated for time of annealing
Q = 0.0048(Lx
2
+Ly
2
+Lz
2
)/D0
. Curves 2 and 4 were calculated for time of annealing Q = 0.0057(Lx
2
+Ly
2
+Lz
2
)/D0
. Curves 1 and 2
were calculated for homogenous samples. Curves 3 and 4 were calculated for heterostructure for the case, when the diffusion
coefficient of dopant in the substrate is smaller than the diffusion coefficient of dopant in the epitaxial layer
23. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 37
( ) ( )
0 0 0
1
, , , , ,
y
x z
L
L L
x y z
U C x y z x y z d z d y d x
L L L
Θ −
∫ ∫ ∫
(15)
to determine the compromise value of annealing time. Here, y(x,y,z) is the considered step-wise
approximation function [Figure 5]. Figures 6 (for diffusion type of doping) and 7 (for ion type of doping)
show optimal annealing times as functions of several parameters. It is known that anneal radiation defects
after ion implantation should be done. Spatial distributions of dopant will spread during this annealing.
Figure 4: Spatial distributions of concentration of the infused dopant in the considered heterostructure. Curve 1 shows
idealized dopant distribution (step-wise function). Curves 2–4 show real dopant distributions at the different continuance of
annealing. The larger value of the number of curves mean larger value of continuance of annealing
Figure 5: Spatial distributions of concentration of the implanted dopant in the considered heterostructure. Curve 1 shows
idealized dopant distribution (step-wise function). Curves 2–4 show real dopant distributions at the different continuance
of annealing. Larger value of the number of the curve means larger value of continuance of annealing sharpness of this
distribution after this area. To obtain this compromise, we used recently introduced criterion.[29-37]
To use this criterion, one
shall approximate real spatial distribution of dopant concentration by required step-wise function (Figure 4 for diffusion type
of doping and 5 for ion type of doping). After that, one shall minimize the mean-squared error
24. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 38
The dopant should achieve the required interface between layers of heterostructure during the annealing.
If dopant cannot achieve during the radiation defects annealing, it is attracted an interest additional
annealing of the dopant. In this situation, one can find the smaller value of implanted dopant annealing
time in comparison with annealing time of infused dopant.
Now, we consider the influence of variation of miss-match induced stress on the dopant concentration
distribution in the considered heterostructure.At e0
0, a compression of dopant concentration distribution
could be found near the interface between layers of the heterostructure. On the other hand (at e0
0), the
spreading of the distribution could be found. The variation of distribution could be partially decreased
by laser annealing[37]
due to the acceleration of dopant diffusion during this procedure. Mismatch-
Figure 6: Dimensionless optimal annealing time of infused dopant as functions of several parameters. Curve 1 describes
dependence of the annealing time on a/L at x = g = 0 in homogenous material. Curve 2 describes dependence of the annealing
time on e at a/L=1/2 and x = g = 0. Curve 3 describes dependence of the annealing time on x at a/L =1/2 and e = g = 0. Curve
4 describes dependence of the annealing time on g at a/L=1/2 and e = x = 0
Figure 7: Dimensionless optimal annealing time of infused dopant as functions of several parameters. Curve 1 describes
dependence of the annealing time on a/L at x = g = 0 in homogenous material. Curve 2 describes dependence of the annealing
time on e at a/L=1/2 and x = g = 0. Curve 3 describes dependence of the annealing time on x at a/L =1/2 and e = g = 0. Curve
4 describes dependence of the annealing time on g at a/L=1/2 and e = x = 0
25. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 39
induced stress in heterostructure leads to changing of value of optimal annealing time. At the same time,
modification of porosity leads to decrease the value of mechanical stress. On the one hand, mismatch-
induced stress could be used to increase the density of elements of integrated circuits. At the same time,
the stress could leads to generation dislocations of the discrepancy. Figures 8 and 9 show vacancies
concentration distributions in porous materials and component of the displacement vector, which are
perpendicular to the interface between layers of the heterostructure.
CONCLUSION
We analyzed the redistribution of implanted and infused dopants in a heterostructure with porous layer
to manufacturing field-effect heterotransistors framework in a sense-amplifier based flip-flop. We also
Figure 8: Dependences of the normalized component of displacement vector on coordinate, which is perpendicular to the
interface between layers of the heterostructure. Curve 1 corresponds to nonporous material. Curve 2 corresponds to porous
material
Figure 9: Dependences of normalized vacancy concentrations on coordinate, which is perpendicular to the interface between
layers of the heterostructure. Curve 1 corresponds to nonporous material. Curve 2 corresponds to porous material
26. Pankratov: On optimization of manufacturing of a sense-amplifier based flip-flop
AJMS/Jan-Mar-2020/Vol 4/Issue 1 40
analyzed the influence of relaxation mismatch-induced stress on the above redistribution. We obtain
several recommendations to optimize annealing for decreasing dimensions of transistors and to increase
their density framework integrated circuits. We also formulate conditions for decreasing mismatch-
induced stress. An analytical approach to solve considered boundary problems with account nonlinearity
of processes and changing of parameters in space and time has been introduced.
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