Newdee6113 cmos
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This document contains exam questions and answers about integrated circuits and microelectromechanical systems (MEMS) fabrication processes. Question 1 asks about (a) Gordon Moore's predictions for increasing computing productivity and cost, (b) classifications of integrated circuits based on circuit function, and (c) the differences between bulk micromachining, surface micromachining, and LIGA MEMS fabrication processes.
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Bl34395398
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Ijetcas14 643
This document summarizes research that analyzed the effect of temperature on the parameters of silicon solar cells. It was found that the open circuit voltage (Voc) of the solar cells decreases linearly as temperature increases from 20°C to 80°C. In contrast, the short circuit current (Isc) was found to increase only slightly with higher temperatures. The maximum efficiency of 18.5% was obtained at 20°C when Voc was 667.3mV and Isc was 37.56mA. Overall, the study demonstrated that higher temperatures negatively impact the Voc, fill factor, and efficiency of silicon solar cells.
Ijetcas14 647
This document summarizes the performance enhancement and characterization of a junctionless vertical slit field effect transistor (JLVeSFET). Key findings from simulations include:
1) The JLVeSFET shows an optimized subthreshold slope of 65mV/decade and OFF current of ~10-18A/μm for a 50nm radius device with a high-k dielectric.
2) Using a high-k dielectric (Si3N4) instead of SiO2 increases the Ion/Ioff ratio to ~1011 and reduces the subthreshold slope to 63mV/decade.
3) Increasing the gate doping concentration reduces the subthreshold slope slightly while increasing the Ion/
Dep 6 a cmos
This document contains:
1. A list of 5 student names and their student IDs
2. Instructions for a question on a CMOS circuit design project asking students to define a stick diagram, state color codes, draw the CMOS static diagram, and draw the stick diagram layout for the Boolean function A + B.
3. Additional Boolean functions of A.B and A+B for separate circuits.
Dee6113 cmos ic design
Cmos IC design Final exam question
June 2016
Section A, Question 1-a,b & c
Politeknik Kota Kinabalu
Cmos
The document provides instructions for a CMOS circuit design exam question. Students are asked to:
1) Define color codes for a stick diagram representation of a CMOS circuit
2) Draw the static CMOS diagram for the Boolean functions A+B and A+B using the company XYZ's 3um design rules
3) Draw the stick diagram layout representation of the CMOS circuit.
How to Become a Thought Leader in Your Niche
Are bloggers thought leaders? Here are some tips on how you can become one. Provide great value, put awesome content out there on a regular basis, and help others.
CMOS INTEGRATED CIRCUIT DESIGN
NURASHILA BINTI ABDUL HAMID 07DEP14F2020
SUNARTI BINTI KADIR 07DEP14F2003
MARIANA BINTI MOHD TAHIR 07DEP14F2006
NURUL AFFIFAH NADIA BINTI ABDUL JALIL 07DEP14F2013
AFIF RAZAN BIN BING 07DEP14F2001
Recommended
Bl34395398
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Ijetcas14 643
This document summarizes research that analyzed the effect of temperature on the parameters of silicon solar cells. It was found that the open circuit voltage (Voc) of the solar cells decreases linearly as temperature increases from 20°C to 80°C. In contrast, the short circuit current (Isc) was found to increase only slightly with higher temperatures. The maximum efficiency of 18.5% was obtained at 20°C when Voc was 667.3mV and Isc was 37.56mA. Overall, the study demonstrated that higher temperatures negatively impact the Voc, fill factor, and efficiency of silicon solar cells.
Ijetcas14 647
This document summarizes the performance enhancement and characterization of a junctionless vertical slit field effect transistor (JLVeSFET). Key findings from simulations include:
1) The JLVeSFET shows an optimized subthreshold slope of 65mV/decade and OFF current of ~10-18A/μm for a 50nm radius device with a high-k dielectric.
2) Using a high-k dielectric (Si3N4) instead of SiO2 increases the Ion/Ioff ratio to ~1011 and reduces the subthreshold slope to 63mV/decade.
3) Increasing the gate doping concentration reduces the subthreshold slope slightly while increasing the Ion/
Dep 6 a cmos
This document contains:
1. A list of 5 student names and their student IDs
2. Instructions for a question on a CMOS circuit design project asking students to define a stick diagram, state color codes, draw the CMOS static diagram, and draw the stick diagram layout for the Boolean function A + B.
3. Additional Boolean functions of A.B and A+B for separate circuits.
Dee6113 cmos ic design
Cmos IC design Final exam question
June 2016
Section A, Question 1-a,b & c
Politeknik Kota Kinabalu
Cmos
The document provides instructions for a CMOS circuit design exam question. Students are asked to:
1) Define color codes for a stick diagram representation of a CMOS circuit
2) Draw the static CMOS diagram for the Boolean functions A+B and A+B using the company XYZ's 3um design rules
3) Draw the stick diagram layout representation of the CMOS circuit.
How to Become a Thought Leader in Your Niche
Are bloggers thought leaders? Here are some tips on how you can become one. Provide great value, put awesome content out there on a regular basis, and help others.
CMOS INTEGRATED CIRCUIT DESIGN
NURASHILA BINTI ABDUL HAMID 07DEP14F2020
SUNARTI BINTI KADIR 07DEP14F2003
MARIANA BINTI MOHD TAHIR 07DEP14F2006
NURUL AFFIFAH NADIA BINTI ABDUL JALIL 07DEP14F2013
AFIF RAZAN BIN BING 07DEP14F2001
DEE6113 CMOS
This document contains exam questions and answers about integrated circuits and microelectromechanical systems (MEMS) fabrication processes. It lists four student names and exam details, followed by three exam questions and answers on:
1) Gordon Moore's predictions about increasing processing power and transistor counts doubling every two years.
2) Classifying integrated circuits by function into digital, analog, and other examples.
3) Differentiating three MEMS fabrication processes - bulk micromachining, surface micromachining, and LIGA - based on speed, aspect ratios, wafer processing, layers, and costs.
CMOS Final Jun2016
This document discusses CMOS integrated circuit design and contains questions and answers on the topic.
Question 1 asks about Gordon Moore's predictions on increasing computing power and his prediction that the number of transistors on a chip would double every 18 months.
Question 2 asks about classifications of integrated circuits based on circuit function - analog, digital, and mixed-signal. It provides descriptions of each.
Question 3 asks about differentiating between three MEMS fabrication processes: bulk micromachining which defines structures by selectively etching inside a substrate; surface micromachining which forms movable structures on platforms then removes the platforms; and LIGA which uses lithography, electroplating, and molding to create high-aspect-ratio
Ppt3 e19[recovered]
This document discusses CMOS integrated circuit design and contains questions and answers on the topic.
Question 1 asks about Gordon Moore's predictions on increasing computing power and his prediction that the number of transistors on a chip would double every 18 months.
Question 2 asks about classifications of integrated circuits based on circuit function - analog, digital, and mixed-signal. It provides descriptions of each.
Question 3 asks about different MEMS fabrication processes - bulk micromachining, surface micromachining, and LIGA - and provides brief descriptions of each process.
Ijarcet vol-2-issue-7-2328-2332
This document investigates the performance of two-stage operational amplifiers at different CMOS technology nodes. Electrical characteristics like differential gain, bandwidth, slew rate, and power dissipation are evaluated for 16nm, 22nm, and 32nm processes. Temperature effects on characteristics are also analyzed for the 32nm node. Results show that performance generally decreases with scaling while power is reduced. Characteristics like gain, bandwidth, and slew rate are negatively impacted by increases in temperature. The document aims to understand how technology scaling and temperature variations affect conventional CMOS operational amplifier design.
Ijarcet vol-2-issue-7-2328-2332
This document investigates the performance of two-stage operational amplifiers at different CMOS technology nodes. Electrical characteristics like differential gain, bandwidth, slew rate, and power dissipation are evaluated for 16nm, 22nm, and 32nm processes. Temperature effects on characteristics are also analyzed for the 32nm node. Results show that performance generally decreases with scaling while power is reduced. Characteristics like gain, bandwidth, and slew rate are negatively impacted by increases in temperature. The document aims to understand how technology scaling and temperature variations affect conventional CMOS operational amplifier design.
under grund fault ppt (1).pptx
The document describes a system to identify the location of faults in underground electrical cables using an Internet of Things (IoT) platform. The system uses resistors to represent the underground cable and detects changes in voltage across the resistors to determine the location of short circuits. When a short circuit occurs, the voltage data is sent to a microcontroller and IoT module to display the fault location. The system allows utilities to locate cable faults without disconnecting the cable from the grid.
CMOS LOW POWER CELL LIBRARY FOR DIGITAL DESIGN
Historically, VLSI designers have focused on increasing the speed and reducing the area of digital systems.
However, the evolution of portable systems and advanced Deep Sub-Micron fabrication technologies have
brought power dissipation as another critical design factor. Low power design reduces cooling cost and
increases reliability especially for high density systems. Moreover, it reduces the weight and size of
portable devices. The power dissipation in CMOS circuits consists of static and dynamic components. Since
dynamic power is proportional to V2
dd and static power is proportional to Vdd, lowering the supply voltage
and device dimensions, the transistor threshold voltage also has to be scaled down to achieve the required
performance.
In case of static power, the power is consumed during the steady state condition i.e when there are no
input/output transitions. Static power has two sources: DC power and Leakage power. Consecutively to
facilitate voltage scaling without disturbing the performance, threshold voltage has to be minimized.
Furthermore it leads to better noise margins and helps to avoid the hot carrier effects in short channel
devices. In this paper we have been proposed the new CMOS library for the complex digital design using
scaling the supply voltage and device dimensions and also suggest the methods to control the leakage
current to obtain the minimum power dissipation at optimum value of supply voltage and transistor
threshold. In this paper CMOS Cell library has been implemented using TSMC (0.18um) and TSMC
(90nm) technology using HEP2 tool of IC designing from Mentor Graphics for various analysis and
simulations.
A new improved mcml logic for dpa resistant circuits
Security of electronic data remains the major conce
rn. The art of encryption to secure the data can be
achieved in various levels of abstraction. The choi
ce of the logic style in implementing the security
algorithms has greater significance, and it can enh
ance the ability of providing better resistance to
side
channel attacks. The static CMOS logic style is pro
ved to be prone to side channel power attacks. The
exploration of CMOS current mode logic style for re
sistance against these side channel attacks is disc
ussed
in this paper. Various characteristics of the curre
nt mode logic styles, which make it suitable for ma
king
DPA resistant circuits are explored. A new methodol
ogy of biasing the sleep transistors of (MOS curren
t
mode logic) MCML families is proposed. It uses pass
gate transistors for power-gating the circuits. Th
e
power variations of the proposed circuits are compa
red against the standard CMOS counterparts. Logic
gates such as XOR, NAND and AND gate structures of
MCML families and static CMOS are designed and
compared for the ability of side channel resistance
. A distributed arrangement of sleep transistors fo
r
reducing the static power dissipation in the logic
gates is also proposed, designed and analyzed. All
the
logic gates in MCML and CMOS were implemented using
standard 180 nm CMOS technology employing
Cadence® EDA tools.
40120140502006
This document describes a microcontroller-based semiconductor device tester that can test diodes, bipolar junction transistors (BJTs), and junction field effect transistors (JFETs). The tester identifies the device type and determines the leads. It then measures key parameters like forward voltage and current for diodes, current gain for BJTs, and cutoff voltage, saturation current, and drain-source resistance for JFETs. The tester uses a PIC microcontroller, analog multiplexer, digital-to-analog converter, and LCD for a low-cost, low-power, and user-friendly design. Test results are clearly displayed on the LCD for analysis.
IRJET- An Analysis of CMOS based Low Power 2:4 Decoder at 32nm Node using LEC...
This document summarizes a research paper that analyzes a CMOS-based 2:4 decoder circuit implemented at a 32nm technology node using the LECTOR (Leakage Control TransistOR) technique to reduce leakage power. The LECTOR technique introduces additional transistors between the pull-up and pull-down networks of CMOS gates to increase resistance and reduce leakage current when the circuit is idle. Simulation results show the LECTOR-based 2:4 decoder reduces leakage power by 65.23% and leakage current by 65.23% compared to a conventional CMOS implementation, with a 145.81% increase in propagation delay. The LECTOR technique effectively reduces static power consumption without impacting dynamic power.
A Simulation Based Analysis of Lowering Dynamic Power in a CMOS Inverter
With the increase in demand of high fidelity
portable devices, there is more and more emphasis laying
down on the development of low power and high performance
systems. In the next generation processors, the low power
design has to be incorporated into fundamental computation
units, such as adder. CMOS circuit design plays a crucial role
in designing of these computation units (like adder and
multiplier) so if there is any optimal way to reduce the power
dissipation in CMOS circuits then it will directly lower down
the power dissipation of other circuits and logic gates as well.
In this paper we have studied and analyzed different
techniques to reduce the dynamic power of CMOS circuit
with the help of performing simulation on some significant
factors (i.e device characteristics) of respective circuitry
designs by using Cadence-Virtuoso tool.
Faculty of Engineering and Technology.pptx
This document describes the development of an islanding arrangement system for a power grid. The system will automatically disconnect a feeder unit from the grid if abnormalities in voltage or frequency are detected. This is done to prevent large-scale blackouts. The system uses a microcontroller, relays, LEDs, an LCD display, and other hardware. It also includes a power supply circuit. If deviations from the grid's acceptable voltage or frequency limits are detected, the feeder unit will disconnect to avoid complete grid failure. The document provides background on power grids and islanding, and describes the hardware, software, working, and advantages of the developed system.
International Journal of Engineering Research and Development (IJERD)
International Journal of Engineering Research and Development is an international premier peer reviewed open access engineering and technology journal promoting the discovery, innovation, advancement and dissemination of basic and transitional knowledge in engineering, technology and related disciplines.
Analysis of CMOS Comparator in 90nm Technology with Different Power Reduction...
To reduce power consumption of regenerative comparator three different techniques are incorporated in this work. These techniques provide a way to achieve low power consumption through their mechanism that alters the operation of the circuit. These techniques are pseudo NMOS, CVSL (cascode voltage switch logic)/DCVS (differential cascode voltage switch) & power gating. Initially regenerative comparator is simulated at 90 nm CMOS technology with 0.7 V supply voltage. Results shows total power consumption of 15.02 µW with considerably large leakage current of 52.03 nA. Further, with pseudo NMOS technique total power consumption increases to 126.53 µW while CVSL shows total power consumption of 18.94 µW with leakage current of 1270.13 nA. More then 90% reduction is attained in total power consumption and leakage current by employing the power gating technique. Moreover, the variations in the power consumption with temperature is also recorded for all three reported techniques where power gating again show optimum variations with least power consumption. Four more conventional comparator circuits are also simulated in 90nm CMOS technology for comparison. Comparison shows better results for regenerative comparator with power gating technique. Simulations are executed by employing SPICE based on 90 nm CMOS technology.
I DDQ Testing of Low Voltage CMOS Operational Transconductance Amplifier
The paper describes the design for testability (DFT) of low voltage two stage operational transconductance amplifiers based on quiescent power supply current (I DDQ ) testing. I testing refers to the integral circuit testing method based upon measurement of steady state power supply current for testing both digital as well as analog VLSI circuit. A built in current sensor, which introduces insignificant performance degradation of the circuit-under-test, has been proposed to monitor the power supply quiescent current changes in the circuit under test. Moreover, the BICS requires neither an external voltage reference nor a current source and able to detect, identify and localize the circuit faults. Hence the BICS requires less area and is more efficient than the conventional current sensors. The testability has also been enhanced in the testing procedure using a simple fault-injection technique. Both bridging and open faults have been analyzed in proposed work by using nwell 0.18µm CMOS technology. DDQ
Performance Analysis of Encoder in Different Logic Techniques for High-Speed ...
In designing a system, we can replace cell components by appropriate technique based cell so that the noise margin of overall circuit is improved. In future we can also implement some techniques for sequential circuits.
Design of Low Voltage D-Flip Flop Using MOS Current Mode Logic (MCML) For Hig...
This paper presents a new topology to implement MOS current mod logic (MCML) tri-state buffers. In Mos current mode logic (MCML) current section is improves the performance and maintains low power of the circuit. MCML circuits contains true differential operation by which provides the feature of low noise level generation and static power dissipation. So the amount of current drawn from the power supply does not depends on the switching activity. Due to this MOS current mode logic (MCML) circuits have been useful for developing analog and mixed signal IC’s. The implementing of MCML D-flip flop and Frequency divider done by using MCML D-latches. The proposed MCML D-latch consumes less power as it makes use of low power tri-state buffers. Which promotes power saving due to reduction in the overall current flow in the proposed D flip flop topology is verified though Cadence GPDK-180nM CMOS technology parameters.
Energy Efficient Design of Multiplexer Using Adiabatic logic
the increasing prominence of portable systems and the need to limit the power consumption in very high density VLSI chips have led to rapid and innovative developments in low power design during the recent years. The CMOS technology provides circuits with very low static power dissipation, during the switching operation currents are generated, due to the discharge of load capacitances that cause power dissipation increasing with the clock frequency. The adiabatic technique prevents such losses, the charge does not flow from the supply voltage to the load capacitance and then to ground, but it flows back to a trapezoidal or sinusoidal supply voltage and can be reused.In this paper a low 2:1 multiplexer is designed using positive feedback adiabatic logic. The design is simulated at .12µm technology using Microwind 3.1. Simulated results shows that proposed design saves 38% energy as compare to conventional CMOS design.
Compact low power high slew-rate cmos buffer amplifier with power gating tech...
A qualitative analysis of different parameters such as Phase noise, Slew rate and tranconductance by using
power gating reduction technique is presented. The circuit achieves the large driving capability by
employing simple comparators to sense the transients of the input to turn on the output stages, which are
statically off in the stable state. The effect of the different number of transistors and their topologies on the
phase noise and Slew rate is analyzed. Good agreement between qualitative and quantitative measurements
is observed. Scope of reducing of Noise and avoidance of Leakage due to various sources is discussed.
450 455
The document describes a technique called Local Common Mode Feedback (LCMFB) that can be applied to operational transconductance amplifiers (OTAs) to improve their performance. Applying LCMFB to the conventional OTA structure provides significant increases in gain-bandwidth and slew rate without increasing static power consumption or requiring much additional silicon area. LCMFB works by connecting the gates of the OTA's active load transistors to a common node with matched resistors, forming a feedback loop that enhances the amplifier's characteristics and versatility. The proposed OTA architecture with LCMFB can achieve high slew rates and gain bandwidth needed for wireless applications while keeping low static power, addressing demands for improved performance in battery-powered systems.
PCOS corelations and management through Ayurveda.
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DEE6113 CMOS
This document contains exam questions and answers about integrated circuits and microelectromechanical systems (MEMS) fabrication processes. It lists four student names and exam details, followed by three exam questions and answers on:
1) Gordon Moore's predictions about increasing processing power and transistor counts doubling every two years.
2) Classifying integrated circuits by function into digital, analog, and other examples.
3) Differentiating three MEMS fabrication processes - bulk micromachining, surface micromachining, and LIGA - based on speed, aspect ratios, wafer processing, layers, and costs.
CMOS Final Jun2016
This document discusses CMOS integrated circuit design and contains questions and answers on the topic.
Question 1 asks about Gordon Moore's predictions on increasing computing power and his prediction that the number of transistors on a chip would double every 18 months.
Question 2 asks about classifications of integrated circuits based on circuit function - analog, digital, and mixed-signal. It provides descriptions of each.
Question 3 asks about differentiating between three MEMS fabrication processes: bulk micromachining which defines structures by selectively etching inside a substrate; surface micromachining which forms movable structures on platforms then removes the platforms; and LIGA which uses lithography, electroplating, and molding to create high-aspect-ratio
Ppt3 e19[recovered]
This document discusses CMOS integrated circuit design and contains questions and answers on the topic.
Question 1 asks about Gordon Moore's predictions on increasing computing power and his prediction that the number of transistors on a chip would double every 18 months.
Question 2 asks about classifications of integrated circuits based on circuit function - analog, digital, and mixed-signal. It provides descriptions of each.
Question 3 asks about different MEMS fabrication processes - bulk micromachining, surface micromachining, and LIGA - and provides brief descriptions of each process.
Ijarcet vol-2-issue-7-2328-2332
This document investigates the performance of two-stage operational amplifiers at different CMOS technology nodes. Electrical characteristics like differential gain, bandwidth, slew rate, and power dissipation are evaluated for 16nm, 22nm, and 32nm processes. Temperature effects on characteristics are also analyzed for the 32nm node. Results show that performance generally decreases with scaling while power is reduced. Characteristics like gain, bandwidth, and slew rate are negatively impacted by increases in temperature. The document aims to understand how technology scaling and temperature variations affect conventional CMOS operational amplifier design.
Ijarcet vol-2-issue-7-2328-2332
This document investigates the performance of two-stage operational amplifiers at different CMOS technology nodes. Electrical characteristics like differential gain, bandwidth, slew rate, and power dissipation are evaluated for 16nm, 22nm, and 32nm processes. Temperature effects on characteristics are also analyzed for the 32nm node. Results show that performance generally decreases with scaling while power is reduced. Characteristics like gain, bandwidth, and slew rate are negatively impacted by increases in temperature. The document aims to understand how technology scaling and temperature variations affect conventional CMOS operational amplifier design.
under grund fault ppt (1).pptx
The document describes a system to identify the location of faults in underground electrical cables using an Internet of Things (IoT) platform. The system uses resistors to represent the underground cable and detects changes in voltage across the resistors to determine the location of short circuits. When a short circuit occurs, the voltage data is sent to a microcontroller and IoT module to display the fault location. The system allows utilities to locate cable faults without disconnecting the cable from the grid.
CMOS LOW POWER CELL LIBRARY FOR DIGITAL DESIGN
Historically, VLSI designers have focused on increasing the speed and reducing the area of digital systems.
However, the evolution of portable systems and advanced Deep Sub-Micron fabrication technologies have
brought power dissipation as another critical design factor. Low power design reduces cooling cost and
increases reliability especially for high density systems. Moreover, it reduces the weight and size of
portable devices. The power dissipation in CMOS circuits consists of static and dynamic components. Since
dynamic power is proportional to V2
dd and static power is proportional to Vdd, lowering the supply voltage
and device dimensions, the transistor threshold voltage also has to be scaled down to achieve the required
performance.
In case of static power, the power is consumed during the steady state condition i.e when there are no
input/output transitions. Static power has two sources: DC power and Leakage power. Consecutively to
facilitate voltage scaling without disturbing the performance, threshold voltage has to be minimized.
Furthermore it leads to better noise margins and helps to avoid the hot carrier effects in short channel
devices. In this paper we have been proposed the new CMOS library for the complex digital design using
scaling the supply voltage and device dimensions and also suggest the methods to control the leakage
current to obtain the minimum power dissipation at optimum value of supply voltage and transistor
threshold. In this paper CMOS Cell library has been implemented using TSMC (0.18um) and TSMC
(90nm) technology using HEP2 tool of IC designing from Mentor Graphics for various analysis and
simulations.
A new improved mcml logic for dpa resistant circuits
Security of electronic data remains the major conce
rn. The art of encryption to secure the data can be
achieved in various levels of abstraction. The choi
ce of the logic style in implementing the security
algorithms has greater significance, and it can enh
ance the ability of providing better resistance to
side
channel attacks. The static CMOS logic style is pro
ved to be prone to side channel power attacks. The
exploration of CMOS current mode logic style for re
sistance against these side channel attacks is disc
ussed
in this paper. Various characteristics of the curre
nt mode logic styles, which make it suitable for ma
king
DPA resistant circuits are explored. A new methodol
ogy of biasing the sleep transistors of (MOS curren
t
mode logic) MCML families is proposed. It uses pass
gate transistors for power-gating the circuits. Th
e
power variations of the proposed circuits are compa
red against the standard CMOS counterparts. Logic
gates such as XOR, NAND and AND gate structures of
MCML families and static CMOS are designed and
compared for the ability of side channel resistance
. A distributed arrangement of sleep transistors fo
r
reducing the static power dissipation in the logic
gates is also proposed, designed and analyzed. All
the
logic gates in MCML and CMOS were implemented using
standard 180 nm CMOS technology employing
Cadence® EDA tools.
40120140502006
This document describes a microcontroller-based semiconductor device tester that can test diodes, bipolar junction transistors (BJTs), and junction field effect transistors (JFETs). The tester identifies the device type and determines the leads. It then measures key parameters like forward voltage and current for diodes, current gain for BJTs, and cutoff voltage, saturation current, and drain-source resistance for JFETs. The tester uses a PIC microcontroller, analog multiplexer, digital-to-analog converter, and LCD for a low-cost, low-power, and user-friendly design. Test results are clearly displayed on the LCD for analysis.
IRJET- An Analysis of CMOS based Low Power 2:4 Decoder at 32nm Node using LEC...
This document summarizes a research paper that analyzes a CMOS-based 2:4 decoder circuit implemented at a 32nm technology node using the LECTOR (Leakage Control TransistOR) technique to reduce leakage power. The LECTOR technique introduces additional transistors between the pull-up and pull-down networks of CMOS gates to increase resistance and reduce leakage current when the circuit is idle. Simulation results show the LECTOR-based 2:4 decoder reduces leakage power by 65.23% and leakage current by 65.23% compared to a conventional CMOS implementation, with a 145.81% increase in propagation delay. The LECTOR technique effectively reduces static power consumption without impacting dynamic power.
A Simulation Based Analysis of Lowering Dynamic Power in a CMOS Inverter
With the increase in demand of high fidelity
portable devices, there is more and more emphasis laying
down on the development of low power and high performance
systems. In the next generation processors, the low power
design has to be incorporated into fundamental computation
units, such as adder. CMOS circuit design plays a crucial role
in designing of these computation units (like adder and
multiplier) so if there is any optimal way to reduce the power
dissipation in CMOS circuits then it will directly lower down
the power dissipation of other circuits and logic gates as well.
In this paper we have studied and analyzed different
techniques to reduce the dynamic power of CMOS circuit
with the help of performing simulation on some significant
factors (i.e device characteristics) of respective circuitry
designs by using Cadence-Virtuoso tool.
Faculty of Engineering and Technology.pptx
This document describes the development of an islanding arrangement system for a power grid. The system will automatically disconnect a feeder unit from the grid if abnormalities in voltage or frequency are detected. This is done to prevent large-scale blackouts. The system uses a microcontroller, relays, LEDs, an LCD display, and other hardware. It also includes a power supply circuit. If deviations from the grid's acceptable voltage or frequency limits are detected, the feeder unit will disconnect to avoid complete grid failure. The document provides background on power grids and islanding, and describes the hardware, software, working, and advantages of the developed system.
International Journal of Engineering Research and Development (IJERD)
International Journal of Engineering Research and Development is an international premier peer reviewed open access engineering and technology journal promoting the discovery, innovation, advancement and dissemination of basic and transitional knowledge in engineering, technology and related disciplines.
Analysis of CMOS Comparator in 90nm Technology with Different Power Reduction...
To reduce power consumption of regenerative comparator three different techniques are incorporated in this work. These techniques provide a way to achieve low power consumption through their mechanism that alters the operation of the circuit. These techniques are pseudo NMOS, CVSL (cascode voltage switch logic)/DCVS (differential cascode voltage switch) & power gating. Initially regenerative comparator is simulated at 90 nm CMOS technology with 0.7 V supply voltage. Results shows total power consumption of 15.02 µW with considerably large leakage current of 52.03 nA. Further, with pseudo NMOS technique total power consumption increases to 126.53 µW while CVSL shows total power consumption of 18.94 µW with leakage current of 1270.13 nA. More then 90% reduction is attained in total power consumption and leakage current by employing the power gating technique. Moreover, the variations in the power consumption with temperature is also recorded for all three reported techniques where power gating again show optimum variations with least power consumption. Four more conventional comparator circuits are also simulated in 90nm CMOS technology for comparison. Comparison shows better results for regenerative comparator with power gating technique. Simulations are executed by employing SPICE based on 90 nm CMOS technology.
I DDQ Testing of Low Voltage CMOS Operational Transconductance Amplifier
The paper describes the design for testability (DFT) of low voltage two stage operational transconductance amplifiers based on quiescent power supply current (I DDQ ) testing. I testing refers to the integral circuit testing method based upon measurement of steady state power supply current for testing both digital as well as analog VLSI circuit. A built in current sensor, which introduces insignificant performance degradation of the circuit-under-test, has been proposed to monitor the power supply quiescent current changes in the circuit under test. Moreover, the BICS requires neither an external voltage reference nor a current source and able to detect, identify and localize the circuit faults. Hence the BICS requires less area and is more efficient than the conventional current sensors. The testability has also been enhanced in the testing procedure using a simple fault-injection technique. Both bridging and open faults have been analyzed in proposed work by using nwell 0.18µm CMOS technology. DDQ
Performance Analysis of Encoder in Different Logic Techniques for High-Speed ...
In designing a system, we can replace cell components by appropriate technique based cell so that the noise margin of overall circuit is improved. In future we can also implement some techniques for sequential circuits.
Design of Low Voltage D-Flip Flop Using MOS Current Mode Logic (MCML) For Hig...
This paper presents a new topology to implement MOS current mod logic (MCML) tri-state buffers. In Mos current mode logic (MCML) current section is improves the performance and maintains low power of the circuit. MCML circuits contains true differential operation by which provides the feature of low noise level generation and static power dissipation. So the amount of current drawn from the power supply does not depends on the switching activity. Due to this MOS current mode logic (MCML) circuits have been useful for developing analog and mixed signal IC’s. The implementing of MCML D-flip flop and Frequency divider done by using MCML D-latches. The proposed MCML D-latch consumes less power as it makes use of low power tri-state buffers. Which promotes power saving due to reduction in the overall current flow in the proposed D flip flop topology is verified though Cadence GPDK-180nM CMOS technology parameters.
Energy Efficient Design of Multiplexer Using Adiabatic logic
the increasing prominence of portable systems and the need to limit the power consumption in very high density VLSI chips have led to rapid and innovative developments in low power design during the recent years. The CMOS technology provides circuits with very low static power dissipation, during the switching operation currents are generated, due to the discharge of load capacitances that cause power dissipation increasing with the clock frequency. The adiabatic technique prevents such losses, the charge does not flow from the supply voltage to the load capacitance and then to ground, but it flows back to a trapezoidal or sinusoidal supply voltage and can be reused.In this paper a low 2:1 multiplexer is designed using positive feedback adiabatic logic. The design is simulated at .12µm technology using Microwind 3.1. Simulated results shows that proposed design saves 38% energy as compare to conventional CMOS design.
Compact low power high slew-rate cmos buffer amplifier with power gating tech...
A qualitative analysis of different parameters such as Phase noise, Slew rate and tranconductance by using
power gating reduction technique is presented. The circuit achieves the large driving capability by
employing simple comparators to sense the transients of the input to turn on the output stages, which are
statically off in the stable state. The effect of the different number of transistors and their topologies on the
phase noise and Slew rate is analyzed. Good agreement between qualitative and quantitative measurements
is observed. Scope of reducing of Noise and avoidance of Leakage due to various sources is discussed.
450 455
The document describes a technique called Local Common Mode Feedback (LCMFB) that can be applied to operational transconductance amplifiers (OTAs) to improve their performance. Applying LCMFB to the conventional OTA structure provides significant increases in gain-bandwidth and slew rate without increasing static power consumption or requiring much additional silicon area. LCMFB works by connecting the gates of the OTA's active load transistors to a common node with matched resistors, forming a feedback loop that enhances the amplifier's characteristics and versatility. The proposed OTA architecture with LCMFB can achieve high slew rates and gain bandwidth needed for wireless applications while keeping low static power, addressing demands for improved performance in battery-powered systems.
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Newdee6113 cmos
- 1. DEE6113 CMOS FINAL EXAM JUN 2016 Question 1 (a),(b),(c) JAMES ADEMS JELSON 07DEP14F1041 ROJHOS MICHAL 07DEP14F1044 JANSEN MARSHAL JUSTINUS 07DEP14F21 MATHEW PERRY LIM 07DEP14F1010 MOHD NOH BIN MATALI 07DEP14F1027
- 2. Question 1 a) state two(2) predictions made by Gordon E. Moore to increase the productivity, cheap and computing . • states that processor speeds, or overall processing power for computers will double every two years. • stated that the number of transistors on an affordable CPU would double every two years
- 3. b) intergrated circuit (IC) can be classified into three categories which are fabrication method,transistor type and circuit function Explain intergrated circuit classification based on the circuit function • Analog circuits are circuits dealing with signals free to vary from zero to full power supply voltage. This stands in contrast to digital circuits, which almost exclusively employ “all or nothing” signals: voltages restricted to values of zero and full supply voltage, with no valid state in between those extreme limits. • Digital circuits are circuits dealing with signals restricted to the extreme limits of zero and some full amount
- 4. c) differentiate between the three of MEMS fabricaton process (Bulk micromachining, surface micromachining and LIGA. Bulk micromachining •Can be done much faster •Can make high aspect ratio parts •Cheaper surface micromachining •Mechanical properties of most thin- films are usually unknown and must be measured •Reproducibility of mechanical properties can be difficult •More expensive
- 5. Lithographie Galvanoformung Abformung (LIGA) •Relatively new technology •Enables very high aspect ratio etches •Uses high density plasma to alternately etch and deposit etch resistant polymer on sidewalls
- 6. THANK YOU