This document summarizes a research paper that proposes a new memristor modeling using PSPICE software. It begins with background on memristors and their characteristics. It then describes a reference memristor model and proposes a new model implemented as a library function in PSPICE. The proposed model is simulated and shown to produce an I-V plot similar to theoretical models. The document compares the reference and proposed models and discusses advantages and limitations of memristors as well as future applications.
NanoScale TiO2 based Memory Storage Circuit Element:- MemristorAM Publications
This document discusses the memristor, a fourth fundamental circuit element predicted by Leon Chua in 1971. In 2008, HP Laboratories created the first physical model of a memristor using a thin film of titanium dioxide sandwiched between platinum electrodes. This memristor exhibits variable resistance depending on the charge that has passed through it, fulfilling Chua's prediction. While this initial design had limitations like low speed and heat dissipation, memristors show potential for applications like non-volatile memory, neuromorphic computing, and new circuit designs. Further research is still needed to improve memristor models and address challenges for practical applications.
This document discusses the implementation of low power integrators and differentiators using memristors. It first provides background on memristors and describes the linear ion drift model used to model memristor behavior. It then shows circuit diagrams for traditional op-amp-based integrators and differentiators and their memristor-based counterparts. Transient analyses are performed and results show the memristor-based circuits provide significantly lower power dissipation in the nano-Watt range compared to milli-Watt ranges for traditional designs. Therefore, memristors allow for more compact and reliable analog circuit implementation with reduced power consumption.
Mathematical modeling, simulation and validation of photovoltaic cellseSAT Publishing House
This document describes the mathematical modeling and simulation of photovoltaic cells using Matlab-Simulink. It presents:
1) A model of a photovoltaic cell based on a single diode with series and shunt resistances. The model equations relating current and voltage to factors like temperature, resistance and light intensity are described.
2) Simulation results using the model, showing the impact of varying resistance values and temperature on the I-V characteristics of the cell.
3) Comparison of the model output to experimental data, validating the accuracy of the developed photovoltaic cell model.
2-Dimensional and 3-Dimesional Electromagnetic Fields Using Finite element me...IOSR Journals
This document describes using the finite element method to model 2D and 3D electromagnetic fields. It discusses modeling a quarter section of a rectangular coaxial line with triangular elements. It describes constructing the matrices for each element and combining them to solve the overall matrix equation. The document outlines implementing FEM in MATLAB, including generating meshes, adding sources, and solving the resulting matrices. Several examples are presented of using a graphical user interface created in MATLAB to calculate fields from configurations like straight wires, bent wires, solenoids, and square loops using FEM techniques.
An Novel Ultra Broad-Band Exponential Taper Transmission Line 8- Port NetworkIOSRJECE
An novel Ultra Broad-Band Exponential Taper Transmission Line 8- Port Networkis analyzed. The parameters of this developed network is calculated and its frequency responses are computed. Comparison between the simulated and measured parameters are presented
This document summarizes Juan J Faria Briceno's final report on modeling, simulating, and implementing memristors. The report covers research by other scientists on simulating memristors using different circuit configurations, including using amplifiers, resistors, capacitors and current sources or digital and analog circuits. It also analyzes papers on emulating memristor circuits and modeling and implementing oxide memristors for neuromorphic applications. The report concludes with comments on the future potential of memristors.
This document is a seminar report on memristors submitted for a bachelor's degree. It provides background on the history of memristor theory, which was first proposed by Leon Chua in 1971. However, an actual physical memristor device was not discovered until 2008 by researchers at HP Labs led by R. Stanley Williams. The memristor is described as a new fundamental circuit element that links the relationship between charge and magnetic flux, completing the set of basic circuit variables. The discovery of the physical memristor validates Chua's theoretical predictions from decades earlier and could open up new applications in electronics and computing.
This document provides an overview of magnetic circuits and core losses. It discusses different laws for calculating magnetic fields, including Biot-Savart law and Ampere's circuital law. It explains the concepts of reluctance, permeance, and B-H characteristics of magnetic materials. It also covers the analysis of series and series-parallel magnetic circuits, including important equations. Worked examples are provided to demonstrate solving problems involving linear and non-linear magnetic circuits.
NanoScale TiO2 based Memory Storage Circuit Element:- MemristorAM Publications
This document discusses the memristor, a fourth fundamental circuit element predicted by Leon Chua in 1971. In 2008, HP Laboratories created the first physical model of a memristor using a thin film of titanium dioxide sandwiched between platinum electrodes. This memristor exhibits variable resistance depending on the charge that has passed through it, fulfilling Chua's prediction. While this initial design had limitations like low speed and heat dissipation, memristors show potential for applications like non-volatile memory, neuromorphic computing, and new circuit designs. Further research is still needed to improve memristor models and address challenges for practical applications.
This document discusses the implementation of low power integrators and differentiators using memristors. It first provides background on memristors and describes the linear ion drift model used to model memristor behavior. It then shows circuit diagrams for traditional op-amp-based integrators and differentiators and their memristor-based counterparts. Transient analyses are performed and results show the memristor-based circuits provide significantly lower power dissipation in the nano-Watt range compared to milli-Watt ranges for traditional designs. Therefore, memristors allow for more compact and reliable analog circuit implementation with reduced power consumption.
Mathematical modeling, simulation and validation of photovoltaic cellseSAT Publishing House
This document describes the mathematical modeling and simulation of photovoltaic cells using Matlab-Simulink. It presents:
1) A model of a photovoltaic cell based on a single diode with series and shunt resistances. The model equations relating current and voltage to factors like temperature, resistance and light intensity are described.
2) Simulation results using the model, showing the impact of varying resistance values and temperature on the I-V characteristics of the cell.
3) Comparison of the model output to experimental data, validating the accuracy of the developed photovoltaic cell model.
2-Dimensional and 3-Dimesional Electromagnetic Fields Using Finite element me...IOSR Journals
This document describes using the finite element method to model 2D and 3D electromagnetic fields. It discusses modeling a quarter section of a rectangular coaxial line with triangular elements. It describes constructing the matrices for each element and combining them to solve the overall matrix equation. The document outlines implementing FEM in MATLAB, including generating meshes, adding sources, and solving the resulting matrices. Several examples are presented of using a graphical user interface created in MATLAB to calculate fields from configurations like straight wires, bent wires, solenoids, and square loops using FEM techniques.
An Novel Ultra Broad-Band Exponential Taper Transmission Line 8- Port NetworkIOSRJECE
An novel Ultra Broad-Band Exponential Taper Transmission Line 8- Port Networkis analyzed. The parameters of this developed network is calculated and its frequency responses are computed. Comparison between the simulated and measured parameters are presented
This document summarizes Juan J Faria Briceno's final report on modeling, simulating, and implementing memristors. The report covers research by other scientists on simulating memristors using different circuit configurations, including using amplifiers, resistors, capacitors and current sources or digital and analog circuits. It also analyzes papers on emulating memristor circuits and modeling and implementing oxide memristors for neuromorphic applications. The report concludes with comments on the future potential of memristors.
This document is a seminar report on memristors submitted for a bachelor's degree. It provides background on the history of memristor theory, which was first proposed by Leon Chua in 1971. However, an actual physical memristor device was not discovered until 2008 by researchers at HP Labs led by R. Stanley Williams. The memristor is described as a new fundamental circuit element that links the relationship between charge and magnetic flux, completing the set of basic circuit variables. The discovery of the physical memristor validates Chua's theoretical predictions from decades earlier and could open up new applications in electronics and computing.
This document provides an overview of magnetic circuits and core losses. It discusses different laws for calculating magnetic fields, including Biot-Savart law and Ampere's circuital law. It explains the concepts of reluctance, permeance, and B-H characteristics of magnetic materials. It also covers the analysis of series and series-parallel magnetic circuits, including important equations. Worked examples are provided to demonstrate solving problems involving linear and non-linear magnetic circuits.
Design of the floating-type memristor emulator and its circuit implementationIJRES Journal
This document describes the design of a floating-type memristor emulator circuit. It begins by reviewing existing memristor models and emulators that are limited to ground-type connections. It then presents a novel design for a floating-type memristor emulator based on operational amplifiers and analog multipliers that allows the memristor to connect to other circuits without grounding. Software and physical circuit simulations demonstrate the emulator exhibits key memristor properties, including a hysteresis loop that varies with input frequency and amplitude. The floating-type design was successfully able to emulate a memristor and connect to circuits without grounding limitations.
This document proposes a modified window function to model memristive devices using the linear ion drift model. The linear ion drift model uses a window function to restrict the state variable within device bounds, but existing window functions do not account for sufficient nonlinearity. The document suggests a parabolic window function that allows for greater nonlinearity than previous windows like Jogelkar, Biolek, or Prodromakis windows. This modified window function aims to reproduce device nonlinearity without complex models, assumptions, or computational requirements of existing nonlinear models.
In evolution of memory technology the invention of memristor has colossal impact. It is the memory with resistor as its name indicates its function. The development of memristor as the non-volatile memory device replaces the flash memory and for this reason it is compared to flash memory for the better understanding of the memristor. The demand for high scalability, speed and endurance, the CMOS technology has limitation for the current lithography technology. As the result it is hard to supply the increasing demand for the non-volatile memory with high density. The only hope for the semiconductor industry is memristor by easier way to increase storage density. These larger storage density The increasing demand for high capacity ,high speed and lower priced acts as the force for the research in this field. The performance and the proposing innovation towards the development of the memristor is simulated using the LTspice for new technology.
The document provides an overview of memristors including:
1) Leon Chua first theorized the memristor in 1971 to balance the functions of resistors, capacitors, and inductors. It was not physically realized until 2008 by HP Labs.
2) Memristors are two-terminal devices that "remember" how much current has previously flowed through them by varying their resistance. This sets them apart from other basic circuit elements.
3) HP Labs created one of the first physical memristors using a thin film of titanium dioxide sandwiched between platinum electrodes. The movement of oxygen vacancies allows the device to vary its resistance based on the history of current flowing through it.
The document discusses cable capacitance and how it is measured. It begins by defining cable capacitance as the electrical charges stored within a cable. A cable acts as a capacitor, with the inner conductor and outer sheath acting as the conductive plates separated by insulation. Capacitance is higher for underground cables due to smaller distances between components. Capacitance affects signal transmission speed and charging current. It is measured in picofarads per foot and controlled through insulation thickness, material, and conductor size. A Schering bridge circuit is used to measure unknown cable capacitance and dissipation factor by balancing loads on the bridge's arms.
This document presents the results of a simulation study on nano metal-semiconductor contacts. It includes theoretical background on conventional and nano-scale Schottky diodes. Finite element simulations using COMSOL were conducted to analyze the electric potential, field, and depletion width for different metal particle radii and doping concentrations. The simulations demonstrated enhanced built-in potential and electric field at the interface for smaller radii. Comparisons between theoretical predictions and simulation results showed good agreement. Overall, the study revealed improved characteristics for nano-scale contacts compared to conventional planar contacts.
Electrical Measurements for Semiconducting DevicesYogesh Patil
The document discusses electrical measurements for semiconducting devices. It describes current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics, which are important for understanding the performance of solar cells and other semiconductor applications. The I-V characteristics provide information about the ideality factor and barrier potential of devices like diodes and solar cells. C-V measurements allow determining parameters like doping concentration and flat band potential. Understanding these electrical measurements is key to improving the efficiency of devices using heterojunctions of wide bandgap semiconductors.
This document provides information about electrical generators and DC motors. It discusses:
1. The principle of electrical generators, which convert mechanical energy into electrical energy by inducing voltage in conductors moving through a magnetic field according to Faraday's law of induction.
2. Key parts of generators including a magnetic field and conductors that move to cut the magnetic flux.
3. Types of DC generators including separately excited, shunt wound, series wound, and compound wound generators and their characteristics.
4. The principle of DC motors, which convert electrical energy into mechanical energy by applying a current to a conductor in a magnetic field, producing motion. DC motors can function interchangeably as motors or generators.
5
Capacitance-voltage Profiling Techniques for Characterization of Semiconduct...eeiej_journal
A new capacitance-voltage profiling technique of semiconductor junctions is proposed for characterisation of semiconductor materials and devices. The measurement technique is simple, non-destructive and it has a greater accuracy compared with the classical C-V method of J. Hilibrand and R. D. Gold, developed in 1960.
for more on memristor follow link " http://knol.google.com/k/mangal-das/memristor/ct6a341p9567/14# "
Typically electronics has been defined in terms of three fundamental elements such as resistors, capacitors and inductors. These three elements are used to define the four fundamental circuit variables which are electric current, voltage, charge and magnetic flux. Resistors are used to relate current to voltage, capacitors to relate voltage to charge, and inductors to relate current to magnetic flux, but there was no element which could relate charge to magnetic flux.
To overcome this missing link, scientists came up with a new element called Memristor. These Memristor has the properties of both a memory element and a resistor (hence wisely named as Memristor). Memristor is being called as the fourth fundamental component, hence increasing the importance of its innovation.
Its innovators say “memrisrors are so significant that it would be mandatory to re-write the existing electronics engineering textbooks.”
This document contains a series of questions and problems related to basic electrical concepts such as charge, current, voltage, power, energy, Ohm's law, Kirchhoff's laws, and resistor networks. The questions cover topics like calculating charge, current, power, and energy in circuits; applying Kirchhoff's laws to determine voltages and currents; analyzing series and parallel resistor networks; and using techniques like star-delta transformations. Solutions are provided for some of the example circuit analysis problems. The document appears to be from a textbook or class on basic electrical and electronic engineering concepts.
The document discusses transistor construction and operation. It describes how a transistor has three doped regions (emitter, base, and collector), and how the base is sandwiched between the emitter and collector. It explains that for a transistor to function as an amplifier, the emitter-base junction must be forward-biased and the collector-base junction must be reverse-biased. It also discusses checking transistors with an ohmmeter and different methods of biasing transistors, including base, voltage divider, and emitter biasing.
Designing of an Energy-Efficient Nanoelectronics Architecture for Binary Comp...VIT-AP University
Quantum-dot cellular automata is a nanoscale computation circuit design approach which computes bits via charges
among quantum-dot in the quantum cell of QCA. This technology has promises the feature of energy efficient and high
density in the era of high-speed nanotechnology. This article contributes a new nanoscale design of binary comparator
with less latency, area, and clock utilized. The proposed comparator architecture is robust and enjoys wire crossing
without any crossover, which needs only normal and rotated cells. All the simulation results and calculated parameters
are based on the QCADesigner tool. QCAPro tool based approach has been used to perform the energy dissipation
estimation of the new comparator architecture. A better primitives results as compared to state-of-art technology has
been achieved and good contribution in this area.
This document provides an overview of memristors. It begins by discussing how memristors were theorized by Leon Chua in 1971 to complete the relationship between fundamental circuit variables. Memristors relate magnetic flux and charge. The document then defines memristors, explaining that they are two-terminal circuit elements whose flux is a function of passing charge. It also discusses memristance as the resistance of a memristor, which changes based on the direction of current flow and remembers its last resistance even when power is turned off. Potential applications of memristors include non-volatile memory to replace flash memory.
This document discusses four types of modifications that can be made to an existing power network to revise the Z-bus representation. Type 1 involves adding a branch impedance between a new bus and the reference bus. Type 2 adds a branch between a new bus and an existing bus. Type 3 adds a branch between an existing bus and the reference bus. Type 4 adds a branch between two existing buses. The document presents figures to illustrate each type and provides the corresponding equations to update the Z-bus matrix for the network.
This document contains a sample physics question paper for Class 12 with 26 questions across 5 sections (A-E). It provides general instructions, details of questions in each section, and values of important physical constants. Section A contains 5 one-mark questions, Section B has 5 two-mark questions, Section C has 12 three-mark questions, Section D has 1 four-mark question and Section E contains 3 five-mark questions. The document tests students' understanding of concepts in electricity, magnetism, electromagnetic waves, optics, modern physics and electronics.
This document summarizes a method for calculating the sensitivity matrix that defines the linear relationship between circuit parameters and poles/response of an RLC network. The sensitivity matrix enables efficient statistical analysis and yield predictions. It is obtained by taking derivatives of the poles and transfer function, which are calculated from the eigenvalues and eigenvectors of the network's state equation. An example RLC circuit demonstrates calculating the sensitivity matrix and using it to predict yield based on Monte Carlo simulations.
The Influence of the Metals Citrates, Obtained Using Aquanano Technologies, O...IJERA Editor
A comparative study of the impact of citrates and sulfates of zinc and manganese, obtained with the help of nanotechnology, on the growth of mycelium of medicinal fungus Ganoderma lucidum at their cultivation in a liquids media has been carried out. It was demonstrated that sulfates and citrates of used metals have dramatically different effects on the growth of mycelium Ganoderma lucidum depending on which media they were added to.
A Literature Review on Lean Implementations – A comprehensive summaryIJERA Editor
The available research papers in area of Lean are studied to know the implementation level of different lean
tools, barrier and benefits of implementation are also considered in the review .The commonly used lean tools in
the various organization, most common barriers and benefits have been identified and listed in this paper. Most
common barrier are also components of quality of work life.
Design of the floating-type memristor emulator and its circuit implementationIJRES Journal
This document describes the design of a floating-type memristor emulator circuit. It begins by reviewing existing memristor models and emulators that are limited to ground-type connections. It then presents a novel design for a floating-type memristor emulator based on operational amplifiers and analog multipliers that allows the memristor to connect to other circuits without grounding. Software and physical circuit simulations demonstrate the emulator exhibits key memristor properties, including a hysteresis loop that varies with input frequency and amplitude. The floating-type design was successfully able to emulate a memristor and connect to circuits without grounding limitations.
This document proposes a modified window function to model memristive devices using the linear ion drift model. The linear ion drift model uses a window function to restrict the state variable within device bounds, but existing window functions do not account for sufficient nonlinearity. The document suggests a parabolic window function that allows for greater nonlinearity than previous windows like Jogelkar, Biolek, or Prodromakis windows. This modified window function aims to reproduce device nonlinearity without complex models, assumptions, or computational requirements of existing nonlinear models.
In evolution of memory technology the invention of memristor has colossal impact. It is the memory with resistor as its name indicates its function. The development of memristor as the non-volatile memory device replaces the flash memory and for this reason it is compared to flash memory for the better understanding of the memristor. The demand for high scalability, speed and endurance, the CMOS technology has limitation for the current lithography technology. As the result it is hard to supply the increasing demand for the non-volatile memory with high density. The only hope for the semiconductor industry is memristor by easier way to increase storage density. These larger storage density The increasing demand for high capacity ,high speed and lower priced acts as the force for the research in this field. The performance and the proposing innovation towards the development of the memristor is simulated using the LTspice for new technology.
The document provides an overview of memristors including:
1) Leon Chua first theorized the memristor in 1971 to balance the functions of resistors, capacitors, and inductors. It was not physically realized until 2008 by HP Labs.
2) Memristors are two-terminal devices that "remember" how much current has previously flowed through them by varying their resistance. This sets them apart from other basic circuit elements.
3) HP Labs created one of the first physical memristors using a thin film of titanium dioxide sandwiched between platinum electrodes. The movement of oxygen vacancies allows the device to vary its resistance based on the history of current flowing through it.
The document discusses cable capacitance and how it is measured. It begins by defining cable capacitance as the electrical charges stored within a cable. A cable acts as a capacitor, with the inner conductor and outer sheath acting as the conductive plates separated by insulation. Capacitance is higher for underground cables due to smaller distances between components. Capacitance affects signal transmission speed and charging current. It is measured in picofarads per foot and controlled through insulation thickness, material, and conductor size. A Schering bridge circuit is used to measure unknown cable capacitance and dissipation factor by balancing loads on the bridge's arms.
This document presents the results of a simulation study on nano metal-semiconductor contacts. It includes theoretical background on conventional and nano-scale Schottky diodes. Finite element simulations using COMSOL were conducted to analyze the electric potential, field, and depletion width for different metal particle radii and doping concentrations. The simulations demonstrated enhanced built-in potential and electric field at the interface for smaller radii. Comparisons between theoretical predictions and simulation results showed good agreement. Overall, the study revealed improved characteristics for nano-scale contacts compared to conventional planar contacts.
Electrical Measurements for Semiconducting DevicesYogesh Patil
The document discusses electrical measurements for semiconducting devices. It describes current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics, which are important for understanding the performance of solar cells and other semiconductor applications. The I-V characteristics provide information about the ideality factor and barrier potential of devices like diodes and solar cells. C-V measurements allow determining parameters like doping concentration and flat band potential. Understanding these electrical measurements is key to improving the efficiency of devices using heterojunctions of wide bandgap semiconductors.
This document provides information about electrical generators and DC motors. It discusses:
1. The principle of electrical generators, which convert mechanical energy into electrical energy by inducing voltage in conductors moving through a magnetic field according to Faraday's law of induction.
2. Key parts of generators including a magnetic field and conductors that move to cut the magnetic flux.
3. Types of DC generators including separately excited, shunt wound, series wound, and compound wound generators and their characteristics.
4. The principle of DC motors, which convert electrical energy into mechanical energy by applying a current to a conductor in a magnetic field, producing motion. DC motors can function interchangeably as motors or generators.
5
Capacitance-voltage Profiling Techniques for Characterization of Semiconduct...eeiej_journal
A new capacitance-voltage profiling technique of semiconductor junctions is proposed for characterisation of semiconductor materials and devices. The measurement technique is simple, non-destructive and it has a greater accuracy compared with the classical C-V method of J. Hilibrand and R. D. Gold, developed in 1960.
for more on memristor follow link " http://knol.google.com/k/mangal-das/memristor/ct6a341p9567/14# "
Typically electronics has been defined in terms of three fundamental elements such as resistors, capacitors and inductors. These three elements are used to define the four fundamental circuit variables which are electric current, voltage, charge and magnetic flux. Resistors are used to relate current to voltage, capacitors to relate voltage to charge, and inductors to relate current to magnetic flux, but there was no element which could relate charge to magnetic flux.
To overcome this missing link, scientists came up with a new element called Memristor. These Memristor has the properties of both a memory element and a resistor (hence wisely named as Memristor). Memristor is being called as the fourth fundamental component, hence increasing the importance of its innovation.
Its innovators say “memrisrors are so significant that it would be mandatory to re-write the existing electronics engineering textbooks.”
This document contains a series of questions and problems related to basic electrical concepts such as charge, current, voltage, power, energy, Ohm's law, Kirchhoff's laws, and resistor networks. The questions cover topics like calculating charge, current, power, and energy in circuits; applying Kirchhoff's laws to determine voltages and currents; analyzing series and parallel resistor networks; and using techniques like star-delta transformations. Solutions are provided for some of the example circuit analysis problems. The document appears to be from a textbook or class on basic electrical and electronic engineering concepts.
The document discusses transistor construction and operation. It describes how a transistor has three doped regions (emitter, base, and collector), and how the base is sandwiched between the emitter and collector. It explains that for a transistor to function as an amplifier, the emitter-base junction must be forward-biased and the collector-base junction must be reverse-biased. It also discusses checking transistors with an ohmmeter and different methods of biasing transistors, including base, voltage divider, and emitter biasing.
Designing of an Energy-Efficient Nanoelectronics Architecture for Binary Comp...VIT-AP University
Quantum-dot cellular automata is a nanoscale computation circuit design approach which computes bits via charges
among quantum-dot in the quantum cell of QCA. This technology has promises the feature of energy efficient and high
density in the era of high-speed nanotechnology. This article contributes a new nanoscale design of binary comparator
with less latency, area, and clock utilized. The proposed comparator architecture is robust and enjoys wire crossing
without any crossover, which needs only normal and rotated cells. All the simulation results and calculated parameters
are based on the QCADesigner tool. QCAPro tool based approach has been used to perform the energy dissipation
estimation of the new comparator architecture. A better primitives results as compared to state-of-art technology has
been achieved and good contribution in this area.
This document provides an overview of memristors. It begins by discussing how memristors were theorized by Leon Chua in 1971 to complete the relationship between fundamental circuit variables. Memristors relate magnetic flux and charge. The document then defines memristors, explaining that they are two-terminal circuit elements whose flux is a function of passing charge. It also discusses memristance as the resistance of a memristor, which changes based on the direction of current flow and remembers its last resistance even when power is turned off. Potential applications of memristors include non-volatile memory to replace flash memory.
This document discusses four types of modifications that can be made to an existing power network to revise the Z-bus representation. Type 1 involves adding a branch impedance between a new bus and the reference bus. Type 2 adds a branch between a new bus and an existing bus. Type 3 adds a branch between an existing bus and the reference bus. Type 4 adds a branch between two existing buses. The document presents figures to illustrate each type and provides the corresponding equations to update the Z-bus matrix for the network.
This document contains a sample physics question paper for Class 12 with 26 questions across 5 sections (A-E). It provides general instructions, details of questions in each section, and values of important physical constants. Section A contains 5 one-mark questions, Section B has 5 two-mark questions, Section C has 12 three-mark questions, Section D has 1 four-mark question and Section E contains 3 five-mark questions. The document tests students' understanding of concepts in electricity, magnetism, electromagnetic waves, optics, modern physics and electronics.
This document summarizes a method for calculating the sensitivity matrix that defines the linear relationship between circuit parameters and poles/response of an RLC network. The sensitivity matrix enables efficient statistical analysis and yield predictions. It is obtained by taking derivatives of the poles and transfer function, which are calculated from the eigenvalues and eigenvectors of the network's state equation. An example RLC circuit demonstrates calculating the sensitivity matrix and using it to predict yield based on Monte Carlo simulations.
The Influence of the Metals Citrates, Obtained Using Aquanano Technologies, O...IJERA Editor
A comparative study of the impact of citrates and sulfates of zinc and manganese, obtained with the help of nanotechnology, on the growth of mycelium of medicinal fungus Ganoderma lucidum at their cultivation in a liquids media has been carried out. It was demonstrated that sulfates and citrates of used metals have dramatically different effects on the growth of mycelium Ganoderma lucidum depending on which media they were added to.
A Literature Review on Lean Implementations – A comprehensive summaryIJERA Editor
The available research papers in area of Lean are studied to know the implementation level of different lean
tools, barrier and benefits of implementation are also considered in the review .The commonly used lean tools in
the various organization, most common barriers and benefits have been identified and listed in this paper. Most
common barrier are also components of quality of work life.
A Numerical study of Flow through Sigmoid DuctIJERA Editor
Curved diffusers are an integral component of the gas turbine engines of high-speed aircraft. These facilitate
effective operation of the combustor by reducing the total pressure loss. The performance characteristics of
these diffusers depend on their geometry and the inlet conditions. In the present investigation the distribution of
mean velocity, static pressure and total pressure are experimentally studied on a S-shape Diffusing Duct of
45°/45° angle of turn with an area ratio of 1.65 aspect ratio 3.95 keeping inlet width 55 mm with centre line
length 460 mm. The experimental results then were numerically validated with the help of Fluent. The velocity
distribution shows that generation of secondary motion in the form of counter rotating vortices within the 1st half
of the diffuser. The secondary motion changes their sense of rotation after the inflexion plane of the test
diffuser. The maximum values of the mass average static Pressure recovery and total pressure loss are 36% and
13% compared to the predicted results of 39% and 11% respectively, which shows a good agreement between
the experimental and predicted results.
An Efficient and Optimal Systems For Medical & Industries With Concept of IOTIJERA Editor
Its quit interesting to starts with some philosophical manner rather than the aim of paper, that is, human kind
likes more and more simplified life in their daily activities. The people like, simplification in cooking, travel,
education, fashion design, dressing, information availability about certain things, communication from one place
to another and so on. That means, the people like intelligent automated life. In contrast artificial things can
interact with the human kind and solves their desires. For example, someone may have lost something,
somewhere, but they forget where they lost. The difficulty here is, how find the thing, someone may give the
solutions RFID technology but it works in certain range. So from the discussions, we need, the autonomous
mechanism, that can trace out the locality or information regarding to what we lost? In simple manner, we need
a common platform to integrate entire world of thing. For a little while, the common platform is internet and
hence we labeled Internet of Things(IoT). That’s what, the paper is going to deal. So the principal objective is to
monitoring the thing of parameters from anywhere in the world. The paper is not aimed to integrate entire world
of things right now but dedicated to two fields, medical & small, medium enterprises. In medical field, monitor
the patient through camera interface and patient’s moments using WSN interface. And in case of SM Enterprises
monitors, temperature, water level, machine motion detection using WSN and visual through Camera Interface.
The paper is built with high speed and low cost Raspberry-Pi Controller
This document summarizes a research paper about improving power gating structures used to reduce leakage power in circuits. It describes how operating the sleep transistor between 0V and the threshold voltage (Vth) during sleep mode, called an "intermediate sleep mode", can reduce both wake up time and short circuit current compared to a conventional power gating structure.
The virtual ground node voltage (Vgnd) decreases when using intermediate sleep mode due to the sleep transistor operating in the weak inversion region. This helps reduce wake up time by decreasing the amount of charge that needs to be discharged. However, it also slightly increases leakage current. Simulation results showed up to 20% reduction in wake up time and 45% reduction in short circuit current
A nano-reference-system based on two orthogonal (molecular) micro-goniometers...IJERA Editor
The centrosome, because of 9-fold-symmetry of its orthogonalcentrioles and their circumferential polarity (non-equivalence of the nine centriolarblades,each one molecularly distinguishable), constitutes a biological discrete interface, composed of two orthogonal macromolecular protractors, capable of recognizing and decoding morphogenetic instructions, translating them and delivering targeted molecular complexes into their expected 3D real location in the cell: like an interface or a wiring device, the centrosome recognizes each targeting sequence, matches it with the corresponding receptor, soconnectingit with the correctly-oriented microtubule, directed and targeted towards the desired definite cortical compartment.Morphogenetic geometric instructions (DNA coded) are translated by the centrosome into actual locations in cells, and, as a consequence, macromolecules, labeled by DNA geometric signals, can be correctly delivered into their programmed cell locations. In addition, the centrosome (the most chiral and enantiomorphous cell structure) plays a geometric key role in left-right patterning: axial centriole circumferential polarity, if reversely oriented, constitutes a likely molecular base for bilateral symmetry.
Neural Network Based Parking via Google Map GuidanceIJERA Editor
This document describes an intelligent parking guidance system that uses neural networks and algorithms to predict travel times between locations and allocate parking spaces. It consists of an Intelligent Trip Modeling System (ITMS) that uses a Speed Prediction Neural Network System (SPNNS) and Dynamic Traversing Speed Profile (DTSP) algorithm to accurately predict traffic speed and travel times. The system also includes an intelligent parking guidance component that provides information on nearby parking availability and allows users to reserve spaces based on their predicted time of arrival. The overall goal is to help drivers efficiently find parking by predicting travel times and allocating spaces in advance.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Dynamic Texture Coding using Modified Haar Wavelet with CUDAIJERA Editor
Texture is an image having repetition of patterns. There are two types, static and dynamic texture. Static texture is an image having repetitions of patterns in the spatial domain. Dynamic texture is number of frames having repetitions in spatial and temporal domain. This paper introduces a novel method for dynamic texture coding to achieve higher compression ratio of dynamic texture using 2D-modified Haar wavelet transform. The dynamic texture video contains high redundant parts in spatial and temporal domain. Redundant parts can be removed to achieve high compression ratios with better visual quality. The modified Haar wavelet is used to exploit spatial and temporal correlations amongst the pixels. The YCbCr color model is used to exploit chromatic components as HVS is less sensitive to chrominance. To decrease the time complexity of algorithm parallel programming is done using CUDA (Compute Unified Device Architecture). GPU contains the number of cores as compared to CPU, which is utilized to reduce the time complexity of algorithms.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Securely Data Forwarding and Maintaining Reliability of Data in Cloud ComputingIJERA Editor
Cloud works as an online storage servers and provides long term storage services over the internet. It is like a third party in whom we can store a data so they need data confidentiality, robustness and functionality. Encryption and encoding methods are used to solve such problems. After that divide proxy re-encryption scheme and integrating it with a decentralized erasure code such that a secure distributed storage system is formulated. The distributed storage system not only supports secure, robust data storage and retrieval but also lets the user forward his data to another user without retrieving the data. A concept of backup in same server allows users to retrieve failure data successfully in the storage server and also forward to another user without retrieving the data back. This is an attempt to provide light-weight approach which protects data access in distributed storage servers. User can implement all important concept i.e. Confidentiality for security, Robustness for healthy data, Reliability for flexible data, Availability for compulsory data will be achieved to another user which is store in cloud and easily overcome problem of “Securely data forwarding and maintaining, reliability of data in cloud computing “using different type of Methodology and Technology.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
A Review and study of the design technique of Microstrip Patch Antenna Techno...IJERA Editor
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distributions in insulating materials. The PEA technique has undergone some advancement since the over
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International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
An Approach on Determination on Coal Quality using Digital Image ProcessingIJERA Editor
Worldwide coal in the 21st century will be influenced by concerns about the effects of coal combustion on the
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limited use because much of the data are not readily accessible; geographic coverage are not comprehensive;
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image processing for its better utilization.
Employing of novel poly (amine-ester) with Pentaerithritol core as a new poly...IJERA Editor
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An Ontological Approach for Mining Association Rules from Transactional DatasetIJERA Editor
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This document discusses the implementation of low power integrators and differentiators using memristors. It presents the mathematical models of memristors and describes how memristor-based integrator and differentiator circuits were designed and simulated. The results show that the memristor-based circuits achieve much lower power consumption in the nano-watt range compared to traditional op-amp based implementations, demonstrating the potential of memristors for low power analog circuit applications.
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1. In 1971, a researcher theorized a fourth circuit component called a memristor that could "remember" electrical states even when powered off. 2. In 2008, HP researchers built the first physical memristor using a thin film of titanium dioxide between platinum layers. 3. Memristors could revolutionize computing by allowing for non-volatile memory and mimicking synaptic behavior in neural networks.
MODELING AND OPTIMIZATION OF PIEZOELECTRIC ENERGY HARVESTING adeij1
In this paper, the modeling, optimization and simulation results of the piezoelectric energy harvesting using bond graph approach are presented. Firstly, a lightweight equivalent model derived from the bond graph is proposed. It’s a comprehensive model, which is suitable for piezoelectric seismic energy harvester investigation and power optimization. The optimal charge impedance for both the resistive load and complex load are given and analysed. Finally a bond graph approach is proposed to allow optimization of the extracted energy while keeping simplicity and standalone capability. The proposed model does not rely on any inductor and is constructed with a simple switch. The power harvested is more than twice the conventional technique one on a wide band of resistive load. The bond graph model is valid close to the analysed mode centre frequency and delivers results compared to experimental and analytical data. Furthermore, we also show that the harvester can be electrically tuned to match the excitation frequency. This makes it possible to maximize the power output for both linear and non-linear loads.
This document outlines the syllabus for a Basic Electrical Engineering course. It includes 5 modules that cover topics such as DC circuits using Ohm's law, electromagnetism, DC machines, single and three phase AC circuits, transformers, and induction motors. The course objectives are to impart basic electrical knowledge, develop circuit analysis skills, highlight various electrical devices, and improve teamwork abilities. Kirchhoff's laws and their applications to circuit analysis are also explained.
This document outlines the syllabus for a Basic Electrical Engineering course. It includes 5 modules that cover topics such as DC circuits using Ohm's law and Kirchhoff's laws, electromagnetism, DC machines, measuring instruments, single-phase AC circuits, domestic wiring, three-phase circuits, synchronous generators, transformers, and induction motors. The objectives are to impart basic electrical knowledge, develop circuit analysis skills, highlight applications of generators, motors, and transformers, and emphasize safety. References and a detailed module-by-module breakdown are provided.
This document describes modeling and simulating photovoltaic (PV) modules in Simulink/Matlab. A simplified PV equivalent circuit model with a single diode is used. The model accounts for how characteristics of PV cells, such as current and voltage, are affected by solar irradiation and temperature. Equations are provided to calculate the key parameters needed for the circuit model based on data from PV module datasheets. Simulation results for current-voltage and power-voltage curves under varying irradiation and temperature are presented and shown to match actual PV module behavior.
A memristor is a new fundamental circuit element discovered by Leon Chua in 1971. It is a two-terminal device that relates magnetic flux and charge, retaining its resistance even when power is removed. Memristors can be used as non-volatile memory or switches in applications like bootable computers or neural networks. The document discusses the physics, operation, and manufacturing of memristors using a TiO2-based solid state device, as well as their potential benefits like lower power usage compared to other technologies. Memristors are predicted to revolutionize computing and data storage in the 21st century similar to the impact of transistors in the 20th century.
Investigation of SLF-EMF effects on Human Body using Computer Simulation Tech...IRJET Journal
This document summarizes a study that used computer simulation to investigate the effects of electromagnetic fields (EMF) from high voltage power lines on the human body. Researchers created detailed 3D models of transmission line towers, power lines, and an anisotropic human body in CST simulation software. They simulated exposure from 750kV power lines and calculated the induced electric and magnetic fields and currents on the human body. Simulation results found that the maximum induced currents in the body were below internationally accepted safety limits from the ICNIRP, indicating that exposure from the transmission system would not harm humans. The study demonstrated the effectiveness of advanced computer modeling for safely investigating complex EMF-human body interactions.
STUDY OF THE EQUIVALENT CIRCUIT OF A DYESENSITIZED SOLAR CELLSAEIJjournal2
The dye-sensitized solar cells (DSSC) have gained the last decades an important place among photovoltaic
technologies due to their low-cost of implementation and their performance, which becomes more efficient.
The experimental data for this type of cells are enriched and accumulated quickly, given the enthusiasm for
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a model in an exponential, and by using the results of some works, we shall make a simulation by the
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the curve.
The document discusses the memristor, a fourth fundamental circuit element discovered by Leon Chua in addition to the resistor, capacitor, and inductor. A memristor is a two-terminal device whose resistance depends on the amount of charge that has passed through it. It retains its resistance even when power is removed, allowing it to "remember" the last resistance level. Potential applications of memristors include non-volatile memory, neural networks, and more energy efficient computing. Experimental solid-state versions have been developed using thin films of titanium dioxide.
Big Bang–Big Crunch Optimization Algorithm for the Maximum Power Point Track...IJMER
This paper presents an intelligent control method for the maximum power point tracking (MPPT) of a
photovoltaic system under variable temperature and irradiance conditions. The Big Bang–Big Crunch (BB–BC)
optimization algorithm is a new optimization method that relies on the Big Bang and Big Crunch theory, one of the
theories of the evolution of the universe. In this paper, a Big Bang–Big Crunch algorithm is presented to meet the
maximum power operating point whatever the climatic conditions are from simulation results, it has been found that
BB–BC method is highly competitive for its better convergence performance.
STUDY OF THE EQUIVALENT CIRCUIT OF A DYESENSITIZED SOLAR CELLSAEIJjournal2
The dye-sensitized solar cells (DSSC) have gained the last decades an important place among photovoltaic technologies due to their low-cost of implementation and their performance, which becomes more efficient. The experimental data for this type of cells are enriched and accumulated quickly, given the enthusiasm for this new technology. The present work treats the equivalent circuit of a dye-sensitized solar cell (DSSC) for a model in an exponential, and by using the results of some works, we shall make a simulation by the software Scilab to obtain the characteristics (I-V), then we will study the influence of every parameter on the curve.
Design of Isolated DC Solar Powered Microgrid with Storage SystemIRJET Journal
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Memristor is considered as the 4th fundamental circuit element envisioned by famous circuit theorist Leon Chua in 1971.
This mysterious element is the missing link between electric charge and magnetic flux. The device has the peculiar property to remember the history of its past event when the supply is turned off.
INTRODUCTION TO ELECTRICAL ENGINEERING Module 1alertofferzz
This document provides an introduction to an electrical engineering course, including outlines of its modules and course outcomes. The modules cover topics such as power generation, DC circuits, AC fundamentals, transformers, motors, and electrical safety. Power can be generated through conventional methods like thermal, hydroelectric, or non-conventional methods like wind, solar and fuel cells. Electrical power systems are represented using single line diagrams showing generators, transformers and loads connected by transmission lines.
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International Conference on NLP, Artificial Intelligence, Machine Learning an...gerogepatton
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We have compiled the most important slides from each speaker's presentation. This year’s compilation, available for free, captures the key insights and contributions shared during the DfMAy 2024 conference.
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Introduction- e - waste – definition - sources of e-waste– hazardous substances in e-waste - effects of e-waste on environment and human health- need for e-waste management– e-waste handling rules - waste minimization techniques for managing e-waste – recycling of e-waste - disposal treatment methods of e- waste – mechanism of extraction of precious metal from leaching solution-global Scenario of E-waste – E-waste in India- case studies.
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Memristor Modeling Using PSPICE
1. Ketaki Bhave Int. Journal of Engineering Research and Applications www.ijera.com
ISSN : 2248-9622, Vol. 4, Issue 7( Version 3), July 2014, pp.139-143
www.ijera.com 139 | P a g e
Memristor Modeling Using PSPICE Ketaki Bhave*, Dr. Nisha Sarwade** *(Electrical Department, Veermata Jijabai Technological Institute, Mumbai) ** (Electrical Department, Veermata Jijabai Technological Institute, Mumbai) ABSTRACT Since conventional CMOS technology is facing the challenges in scaling down the devices beyond 22nm level, there is urgent need of new nanoscale devices. Memristor, known as the fourth basic two-terminal circuit element, has attracted many research interests since the first real device was developed by HP labs in 2008. The concept was originally put forward by Dr. Leon Chua in September 1971. The memristor has a unique capability of carrying a memory of its recent past. The memristor holds the value of previously applied voltage even when the power is switched off, in the form of its resistance level. That‘s an effect that cannot be duplicated by any circuit combination of resistor, capacitor and inductor, which is why the memristor qualifies as the fourth fundamental circuit element. The research is in progress on the concept of the memristor and its practical implementation. However it has not been commercially manufactured yet. However since memristor is at the experimental level only, the memristance characteristics and its effects in different circuits can only be observed using software simulations only. To study the effect of implementation of memristor in various electronic circuits, there is need of a standard memristor model which can be accepted universally and its results should be mathematically true and should resemble the theoretically proposed concepts. The manuscript describes a new memristor model simulated using PSPICE and its results.
Keywords – Charge—Flux relationship, I-V plot, Mathematical modeling, Memristance, Non volatile memory
I. Introduction
Memristor is the fourth fundamental component of basic electrical circuits. It was proposed by Dr. Leon Chua in 1971 [1]. But it was not manufactured in the form of a physical device at that time. However in 2008, a team led by R. Stanley William at HP Labs announced the discovery of memristor. Since then many scientists have been working on memristor and its applications in variety of fields. This manuscript gives a brief introduction of memristor and proposes a model. The proposed memristor model has been simulated using Pspice software. The manuscript concludes with advantages, limitations and future scope of memristors.
II. Literature review
The basic concept of memristor, its characteristics and a brief on modeling techniques is included in the literature review.
2.1 Introduction: Memristor, known as the fourth basic two-terminal circuit element, was originally proposed by Dr. Leon Chua in September 1971. Chua strongly believed that a fourth device existed to provide conceptual symmetry with resistor, capacitor and inductor. This symmetry follows from the description of passive elements as defined by a relation between two of the four fundamental variables. A device linking charge and flux (themselves defined as time integrals of current and
voltage) which would be the memristor was still hypothetical at that time. However, on April 30, 2008, a team at Hewlett Packard Labs led by the scientist R. Stanley Williams announced the discovery of the memristor. The memristor based on a thin film of titanium oxide has been presented as an approximately ideal device. Since then a large deal of efforts has been spent in the research community to study the fabrication and characteristics of memristors. The name ‗Memristor‘ itself indicates its functioning as a resistor having memory of its previous condition. From the circuit-theoretic point of view, the three basic two-terminal circuit elements are defined in terms of a relationship between two of the four fundamental circuit variables, namely; the current i, the voltage v, the charge q, and the flux- linkage φ. Out of the six possible combinations of these four variables, five have led to well-known relationships. Three other relationships are given, respectively, by the axiomatic definition of the three classical circuit elements, namely, the resistor (defined by a relationship between v and i), the inductor (defined by a relationship between φ and i), and the capacitor (defined by a relationship between q and v) as stated in TABLE 1. Only one relationship remains undefined, the relationship between φ and q. It is nothing but the memristance.
RESEARCH ARTICLE OPEN ACCESS
2. Ketaki Bhave Int. Journal of Engineering Research and Applications www.ijera.com
ISSN : 2248-9622, Vol. 4, Issue 7( Version 3), July 2014, pp.139-143
www.ijera.com 140 | P a g e
Sr. No.
Definition
Equation
1.
Voltage(v)
dφ = vdt
2.
Current(i)
dq = idt
3.
Resistance(R)
dv = Rdi
4.
Capacitance(C)
dq = Cdv
5.
Inductance(L)
dφ = Ldi
6.
Memristance(M)
dφ=Mdq
Table 1. Fundamental variables of elctrical circuits From the logical as well as axiomatic points of view, it is necessary for the sake of completeness to postulate the existence of a fourth basic two-terminal circuit element which is characterized by a φ -q curve. This element is called the memristor because, as will be shown later, it behaves somewhat like a nonlinear resistor with memory [1]. The symbolic representation of memristor is as shown in Figure 1. It was first suggested by Chua [1]. Figure 1. Symbolic representation of memristor
2.2 Characteristics of memristor: The characteristics of memristor are unique in nature. It shows a hysteresis curve on application of a sinusoidal signal. The I-V characteristics of the memristor obtained by theoretical calculations are as in Figure 2.
In the case of linear elements, in which M is a constant, memristance, is identical to resistance and, thus, is of no special interest. However, if M is itself a function of q, yielding a nonlinear circuit element, then the situation is more interesting. The i–v characteristic of such a nonlinear relation between q and Q for a sinusoidal input is generally a frequency- dependent Lissajous figure, and no combination of nonlinear resistive, capacitive and inductive components can duplicate the circuit properties of a nonlinear memristor. Figure 2. Input, Output, w/D and I-V Plots for Memristor [2] 2.3 Memristor modeling: There are three possible available types of memristor models ,viz., linear, nonlinear and exponential model. Linear model describes a memristor with linear drift. However, this mathematical form presents us with many difficulties such as the absence of physical boundary conditions. The Nonlinear model solves this problem by incorporating a window function that restricts the drift between the two physical limits (0<x<1). This Nonlinear model still doesn‘t satisfy the specifications of real devices because of its linear dependence on the current (electric field). The Exponential model adds nonlinear dependence on current in its drift equation. In addition, it uses an exponential I-V characteristic based on experimental data. The manuscript proposes a new model by referring an earlier model proposed by Biolek in [3].
III. Proposed memristor model
The memristor model by Biolek [3] has been taken as reference since it is considered to be one of the most efficient models in the research of memristor. The model proposed in[3] is as shown in Figure 3.
3. Ketaki Bhave Int. Journal of Engineering Research and Applications www.ijera.com
ISSN : 2248-9622, Vol. 4, Issue 7( Version 3), July 2014, pp.139-143
www.ijera.com 141 | P a g e
Figure 3. Reference model The memristor library function for this model is as follows: .SUBCKT memristor Plus Minus PARAMS: + Ron=10 Roff=16K Rinit=11K D=10N uv=10F p=10 **************************************** * DIFFERENTIAL EQUATION MODELING * **************************************** Gx 0 x value={ I(Emem)*uv*Ron/D^2*f(V(x),p)} Cx x 0 1 IC={(Roff-Rinit)/(Roff-Ron)} Raux x 0 1T * RESISTIVE PORT OF THE MEMRISTOR * ************************************* Emem plus aux value={-I(Emem)*V(x)*(Roff-Ron)} Roff aux minus {Roff} ************************************** *Flux computation* ************************************** Eflux flux 0 value={SDT(V(plus,minus))} **************************************** *Charge computation* *************************************** Echarge charge 0 value={SDT(I(Emem))} **************************************** * WINDOW FUNCTIONS * FOR NONLINEAR DRIFT MODELING * **************************************** *window function, according to Joglekar .func f(x,p)={1-(2*x-1)^(2*p)} *proposed window function ;.func f(x,i,p)={1-(x-stp(-i))^(2*p)} .ENDS
The new model has been simulated in PSPICE software in the form of a library function. The component saved as a memristor in the library can be used in any circuits using PSPICE.
The proposed model can be represented as shown in Figure 4. Figure 4. Proposed memristor model The model is developed by referring the model proposed by Biolek. The memristance is observed between terminals 1 and 2. This circuit is transformed in the form of a sub circuit, which can be saved as a library function in PSPICE software. This software is mostly used for the simulation of electrical circuits and also lets the user use variety of functions. Here, the new subckt named ‗newmem‘ is simulated. In reference model, integration equations are used for the calculation of flux and charge. But here in this model, instead of using integration function, POLY() function is used, which gives direct integration value. A serial resistance Rser of small value for the purpose of sensing the current through nodes 1 and 2. A clamping circuit is used to initiate the working of memristor. Both the charge and flux depend on state of the memristor, which is sensed at node no.6. The PSPICE library of memristor is as follows: .SUBCKT newmem 1 2 **************************** **Squared quantity of voltage** Eres 1 9 POLY(2) (8, 0) (10, 0) 0 0 0 0 1 **************************** Vsense 9 4 DC 0V **************************** **Current sensing** Fcopy 0 8 Vsense 1 **************************** R2 8 0 1k Rser 2 4 10 **************************** **Differential equation** Gmem 6 0 VALUE={I(Vsense)*max(v(6,0)*(1-v(6, 0)), 0)} ****************************
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ISSN : 2248-9622, Vol. 4, Issue 7( Version 3), July 2014, pp.139-143
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Cmem 6 0 50nF
****************************
**Limiting the window of 0 and 1**
Ecpy 10 0 VALUE={min(max(v(6,0), 0), 1)}
****************************
Rinit 6 0 100Meg
V1 6 7 DC 0.5V
R1 7 0 50Meg
.ENDS
The memristor model implemented by using the
software Orcad Pspice is simulated as follows. The
current through the memristor is plotted versus input
sine voltage of the amplitude 10V and frequency
5kHz. The I-V plot obtained by simulating the
proposed model resembles the I-V plot obtained from
simulation of HP model [2]. Thus the model can be
assumed to be verified and working properly. Figure
5 shows the simulation of model using PSPICE.
Figure 5. Simulation of memristor model for
sinusoidal input
The output observed in the form of I-V plot is as
shown in Figure 6.
V ( i n p u t )
-10V -8V -6V -4V -2V 0V 2V 4V 6V 8V 10V
I(M1:1)
-10mA
-5mA
0A
5mA
10mA
Figure 6. I-V plot obtained by the simulation
IV. Comparison of Reference model and
proposed model
Sr.
No.
Feature Reference
Model
Proposed
Model
1. Working
range
Input Voltage
Amplitude:
1.2-20V;
Input
frequency
range: 1-5Hz
Input Voltage
Amplitude:
1.2-30V;
Input
frequency
range: 1kHz-
10kHz
2. Advantages Accurate
results under
specified
input ranges
Better
Amplitude and
frequency
range
3. Disadvantag
es
Works only
at 1Hz
frequency
Poor results at
very low
frequency
4. Application Very low
frequency
circuits
High frequency
circuits
V. Advantages and limitations of
memristor
Memristor can hold the value between ‗0‘ and
‗1‘, i.e., values other than digital levels. This is a
great advantage as this property can be used to hold
analog values, which are available at physical level.
The need of memory space required to hold the
analog value in the form of memristor level may
provide advantage as the bit storage system certainly
needs more space. This feature can also be utilized in
the field of neural networks, as neural network deals
with analog values only.
The major challenges in the application of the
memristor are its relatively low speed, major changes
in the characteristics at high frequency and the need
for designers to learn how to build circuits with this
new element. Since the memristor is not yet
manufactured commercially, the research remains at
the laboratory level only. Also there is urgent need
for a standard memristor model which can be
acceptable for fabrication and simulation purpose.
VI. Future scope
As stated earlier, memristor is proposed to be
manufactured at nano scale. Hence the device density
reduction is main goal in the manufacturing process.
Since it is at nano scale, the issues arising at nano
level need to be studied and tackled. The research is
in progress on how to model the memristor as a solid
state device. The memory holding capacity of the
memristor needs to be improved in terms of longevity
and accuracy. Speed increase will add major
advantage to memristor technology regarding its use
in Crossbar devices. The use of memristor in non-
5. Ketaki Bhave Int. Journal of Engineering Research and Applications www.ijera.com
ISSN : 2248-9622, Vol. 4, Issue 7( Version 3), July 2014, pp.139-143
www.ijera.com 143 | P a g e
volatile Random Access Memory (NVRAM) will bring about ultimate change in the memory storage systems. Also use of memristor in the neural network systems may unfold important information about the working of human brain.
VII. Conclusion
The simulation of memristor model implemented in the software Orcad Pspice shows results relevant to the ones obtained theoretically. The ideal model works under specific conditions of input voltage and frequency levels, whereas the one with modifications shows significantly better results as the cost of certain assumptaions. It has been proposed that by redesigning certain types of circuits to include memristors, it is possible to obtain the same function with fewer components, making the circuit itself less expensive and significantly decreasing its power consumption. The power consumption by using memristors will be compared with the one using traditional components and results will show the efficiency of memristors.
REFERENCES
[1] L. O. Chua, (Sep. 1971), "Memristors - the missing circuit element", IEEE Trans. Circuit Theory, vol. CT-18, no. 5, pp. 507- 519.
[2] D. B. Strukov, G. S. Snider, D. R. Stewart & R. S. Williams, (2008), ―the missing Memristor found,‖ Nature, 453, Pp.80–83.
[3] Alon Ascoli, Fernando Corinto, Vanessa Senger, Ronald Tetzlaff, (May 2013) ―Memristor Model Comparison‖, IEEE Circuits and Systems Magazine, Digital Object Identifier 10.1109/MCAS.2013.225 6272, Pp-89-105.
[4] Z. Biolek, D. Biolek, and V. Biolkov´a. SPICE model of memristor with nonlinear dopant drift. Radio engineering J., 18(2):211, 2009b.
[5] Ahmad Fuad Adzmi, Azman Nasrudin, Wan Fazlida Hanim Abdullah, Sukreen Hana Herman, (July 2012), ―Memristor Spice Model for Designing Analog Circuit‖, 2012 IEEE Student Conference on Research and Development, S3-1, Pp-78-83.