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Buonassisi (MIT) 2011
Charge Excitation
Lecture 4 – 9/20/2011
MIT Fundamentals of Photovoltaics
2.626/2.627 – Fall 2011
Prof. Tonio Buonassisi
1
Buonassisi (MIT) 2011
2.626/2.627 Roadmap
You Are
Here
2
Buonassisi (MIT) 2011
2.626/2.627: Fundamentals
Charge
Excitation
Charge
Drift/Diff
usion
Charge
Separation
Light
Absorption
Charge
Collection
Outputs
Solar Spectrum
Inputs
Conversion Efficiency 
 
Output Energy
Input Energy
Every photovoltaic device must obey:
For most solar cells, this breaks down into:
total absorption excitation drift/diffusion separation collection
3
Buonassisi (MIT) 2011
Liebig’s Law of the Minimum
S. Glunz, Advances in
Optoelectronics 97370
(2007)
Image by S. W. Glunz. License: CC-BY. Source: "High-Efficiency Crystalline Silicon Solar Cells." Advances in OptoElectronics (2007).
total absorption excitation drift/diffusion separation collection
4
Buonassisi (MIT) 2011
1. Describe phenomenologically how a “band gap”
forms
2. Describe optical absorption in semiconductors as
transitions of charge carriers on an energy band
diagram.
3. Calculate the fraction of photons lost (not absorbed)
by a semiconductor material with a given band gap,
thickness, and reflectivity.
4. Calculate fraction of incident solar energy lost to
“thermalization.”
5. Plot efficiency vs. bandgap, and denote specific
materials.
Learning Objectives: Solar Resource
5
Buonassisi (MIT) 2011
Bandgap: Basic Description
• The “bandgap energy” can most simply be understood, as the
finite amount of energy needed to excite a highly localized
electron into a delocalized, excited state in a semiconductor.
Bonds: why stuff is tough. Excited electrons: why materials conduct
Public domain image. Courtesy of Harry Bhadeshia.
Used with permission.
Public domain image.
6
Buonassisi (MIT) 2011
Bandgap: Chemist’s Description
• An atom in isolation has discrete electron energy levels.
• As atoms move closer together, as in a crystal, electron wavefunctions
overlap. Electrons are Fermions, meaning two particles cannot occupy the
same state. Discrete atomic electron energy levels split, forming bands.
• The gap between bands, denoting an energy range in which no stable
orbitals exist, is the “bandgap”.
7
Buonassisi (MIT) 2011
Bandgap: Physicist’s Description
• The wavefunction of an electron in a crystal is described by the product of
a periodic function (as follows from a periodic crystal lattice) with a plane
wave envelope function (describing electron localization).
Schematic of a repeating Coulomb
potential in a crystal
Atom
electron
potential
Kronig-Penney idealization of a
repeating Coulomb potential in a
crystal (easier to solve numerically)
Atom
electron
potential
Solve Schrödinger’s equation 
two possible solutions:
(1)Electron wavefunction centered
on atoms (bound state)
(2)Electron wavefunction centered
between atoms (excited state).
For introductory reading, see C. Kittel, “Introduction to Solid State Physics”
8
Buonassisi (MIT) 2011
Bandgap: Physicist’s Description
• The wavefunction of an electron in a crystal is described by the product of
a periodic function (as follows from a periodic crystal lattice) with a plane
wave envelope function (describing electron localization).
http://www.pwscf.org/
Electron isopotential surface in silicon
For real systems, use (a) symmetry +
group theory or (b) pseudopotentials
+ computer modeling to solve for
electron wavefunctions. For many
crystal structures, strong directional
dependence of the wavefunction.
For advanced reading, see P. Yu and M. Cardona, “Fundamentals of Semiconductors”
Image by Lorenzo Paulatto on Wikipedia. License: CC-BY-SA.
This content is excluded from our Creative Commons license.
For more information, see http://ocw.mit.edu/fairuse.
9
Buonassisi (MIT) 2011
Classes of Materials, based on Bandgap
10
Image by S-kei on Wikipedia. License: CC-BY-SA. This
content is excluded from our Creative Commons license.
For more information, see http://ocw.mit.edu/fairuse.
Buonassisi (MIT) 2011
1. Describe phenomenologically how a “band gap”
forms
2. Describe optical absorption in semiconductors as
transitions of charge carriers on an energy band
diagram.
3. Calculate the fraction of photons lost (not absorbed)
by a semiconductor material with a given band gap,
thickness, and reflectivity.
4. Calculate fraction of incident solar energy lost to
“thermalization.”
5. Plot efficiency vs. bandgap, and denote specific
materials.
Learning Objectives: Solar Resource
11
Buonassisi (MIT) 2011
Photons – Quanta of Light
Particle-wave duality:
Photons have discrete quanta of energy.
Photons have momentum.
Light can be polarized.
Light can be diffracted.
Light waves can destructively and
constructively interfere.
Eph  h 
hc

pph  k 
h

Relevant Equations:
•Quantum theory describes the
frequency dependence of photon
energy.
12
Buonassisi (MIT) 2011
Charge Promotion in Semiconductors
E
Conduction
Band
Valence
Band
Egap
e-
e-
e-
x
Eph > Egap
At photon energies above the band gap
(i.e., shorter photon wavelengths),
light is absorbed by the semiconductor
and charge is promoted into the conduction band
13
Buonassisi (MIT) 2011
Charge Promotion in Semiconductors
E
Conduction
Band
Valence
Band
Egap
x
Eph < Egap
At photon energies less than the band gap
(i.e., longer photon wavelengths),
incident light is not efficiently absorbed.
14
Buonassisi (MIT) 2011
I  Io  el
Absorption Coefficient () for different materials
(0.62 eV)
(6.2 eV)
15
Courtesy of PVCDROM. Used with permission.
Buonassisi (MIT) 2011
I  Io  el
Absorption Coefficient () for different materials
(0.62 eV)
(6.2 eV)
16 Courtesy of PVCDROM. Used with permission.
Buonassisi (MIT) 2011
1. Describe phenomenologically how a “band gap”
forms
2. Describe optical absorption in semiconductors as
transitions of charge carriers on an energy band
diagram.
3. Calculate the fraction of photons lost (not
absorbed) by a semiconductor material with a
given band gap, thickness, and reflectivity.
4. Calculate fraction of incident solar energy lost to
“thermalization.”
5. Plot efficiency vs. bandgap, and denote specific
materials.
Learning Objectives: Solar Resource
17
Buonassisi (MIT) 2011
Thickness estimate for solar cell materials
Based on these absorption coefficients, estimate a reasonable thickness for a
GaAs solar cell, and a Si solar cell, such that 90% of the light at 800 nm is
absorbed.

I  Io  el
Solar Spectrum
18
Courtesy of PVCDROM. Used with permission.
Buonassisi (MIT) 2011
1. Describe phenomenologically how a “band gap”
forms
2. Describe optical absorption in semiconductors as
transitions of charge carriers on an energy band
diagram.
3. Calculate the fraction of photons lost (not absorbed)
by a semiconductor material with a given band gap,
thickness, and reflectivity.
4. Calculate fraction of incident solar energy lost to
“thermalization.”
5. Plot efficiency vs. bandgap, and denote specific
materials.
Learning Objectives: Solar Resource
19
Buonassisi (MIT) 2011
Thermalization
E
Conduction
Band
Valence
Band
Egap
e-
e-
e-
x
Eph > Egap
At photon energies above the band gap
(i.e., shorter photon wavelengths),
light is absorbed by the semiconductor
and charge is promoted into the conduction band
Photon energy in excess of the bandgap
is lost due to “thermalization.”
Thermalization
Loss
20
Buonassisi (MIT) 2011
Thermalization
E
Conduction
Band
Valence
Band
Egap
e-
e-
x
Eph > Egap
At photon energies above the band gap
(i.e., shorter photon wavelengths),
light is absorbed by the semiconductor
and charge is promoted into the conduction band
Photon energy in excess of the bandgap
is lost due to “thermalization.”
e-
h+
h+
Thermalization
Losses
21
Buonassisi (MIT) 2011
M.A. Green, Physica E 14, 65 (2002)
Time Scale of Thermalization
Courtesy of Elsevier, Inc., http://www.sciencedirect.com. Used with permission.
22
Buonassisi (MIT) 2011
1. Describe phenomenologically how a “band gap”
forms
2. Describe optical absorption in semiconductors as
transitions of charge carriers on an energy band
diagram.
3. Calculate the fraction of photons lost (not absorbed)
by a semiconductor material with a given band gap,
thickness, and reflectivity.
4. Calculate fraction of incident solar energy lost to
“thermalization.”
5. Plot efficiency vs. bandgap, and denote specific
materials.
Learning Objectives: Solar Resource
23
Buonassisi (MIT) 2011
Energy Losses: First Approx.
Thermalization Losses
(band gap too small)
Non-Absorption Losses
(band gap too large)
24
Buonassisi (MIT) 2011
Approximation
EQE,
%
Wavelength, nm
100
0
Photon wavelength
corresponding to Eph = Egap
Reality
M.A. Green, “Radiative
efficiency of state-of-the-art
photovoltaic cells,” Progress
in Photovoltaics (DOI:
10.1002/pip1147), 2011.
Approximating Non-Absorption Losses
EQE = External Quantum
Efficiency, i.e., the
efficiency at which free
charge carriers are
generated by incident
photons on the device.
© Wiley. All rights reserved. This content is excluded from our Creative
Commons license. For more information, see http://ocw.mit.edu/fairuse.
25
Buonassisi (MIT) 2011
Solar Capture: 1 µm Absorber, Single Pass
c-Si (11%)
Approximating Non-Absorption Losses
Reality
26
Buonassisi (MIT) 2011
Approximation
Approximating Thermalization Losses
Eph  Egap  Ethermalization
If Eph  Egap, then
Reality
• For high-energy photons (Eph > ~3 x Eg), electron-electron
interactions can exist, including multiple carrier (exciton)
generation.
• For really high-energy photons (keV–GeV range), core
electron interactions, e--p+ pair formation, occur.
27
Buonassisi (MIT) 2011
Representation of Maximum Power: Single Junction
Energy Losses: First Approximation
Balance between Thermalization and Non-Absorption Losses
Please see lecture video for relevant graphs and explanation.
28
Buonassisi (MIT) 2011
Advanced Concept:
Tandem Cells (Multijunction Devices)
29
Exceeding the S.-Q. Limit
Please see lecture video for relevant graphs and explanation.
Maximum Power: Multi-Junction
Spectral Splitters
30
Photocurrent Generation
Experimental observations
31
Experiment 1
Silicon
LIGHT
Color‐ Wavelength‐ Photon Energy
)
(
24
.
1
)
(
ph
m
eV
E



eV
2
.
3 eV
6
.
1
nm
380 nm
760
wavelength
Photon Energy
Courtesy of Ilan Gur. Used with permission.
No Current Observed under light, regardless its color (wavelength)
Ammeter © source unknown. All rights reserved. This content is excluded from our
Creative Commons license. For more information, see http://ocw.mit.edu/fairuse.
32
Experiment 2
Silicon
Small Current under darkness , larger current under light
Under darkness
Under light
Conclusion: The electric field of the battery is necessary to generate the photocurrent
Ammeter © source unknown. All rights reserved. This content is excluded from our
Creative Commons license. For more information, see http://ocw.mit.edu/fairuse.
33
Experiment 4
Photocurrent
n‐Si
p‐Si Solar cell
Observations:
4. The photocurrent depends on the
“ Quality” of the material:
(Purity , Defects , Cristallinity:
monocrystalline, polycrystalline or
amorphous)
min depends on the material.
1. No need for a battery to detect a
photocurrent
min

 
2. The photocurrent is generated if
Ammeter © source unknown. All rights reserved. This
content is excluded from our Creative Commons license.
For more information, see http://ocw.mit.edu/fairuse.
34
Buonassisi (MIT) 2011
Light Absorption in Organic Materials
35
Buonassisi (MIT) 2011
Courtesy of Ilan Gur. Used with permission.
36
Buonassisi (MIT) 2011
Courtesy of Ilan Gur. Used with permission.
37
Buonassisi (MIT) 2011
Courtesy of Ilan Gur. Used with permission.
38
Buonassisi (MIT) 2011
Courtesy of Ilan Gur. Used with permission.
39
Buonassisi (MIT) 2011
Courtesy of Ilan Gur. Used with permission.
40
Buonassisi (MIT) 2011
Courtesy of Ilan Gur. Used with permission.
41
Buonassisi (MIT) 2011
Light Absorption in Nanomaterials
42
Buonassisi (MIT) 2011
Light Absorption in Nanomaterials
In nanomaterials, particle size can be comparable to the electron wavefunction
in at least one dimension, resulting in “quantum confinement”.
Alivisatos Group
Courtesy of A. Paul Alivisatos. Used with permission.
43
Buonassisi (MIT) 2011
Light Absorption in Nanomaterials
Quantum confinement (function of particle size, shape) changes light
absorption characteristics drastically, for the same material. See the image at
the link below of nanoparticles of the same material in suspension, with
drastically different absorption characteristics.
44
Image removed due to copyright restrictions.
Bandgap vs. Length and Diameter
Li, L. S., J. T. Hu, W. D. Yang and A. P. Alivisatos (2001). "Band gap variation of size-
and shape-controlled colloidal CdSe quantum rods." Nano Letters 1(7): 349-351.
Courtesy of A. Paul Alivisatos. Used with permission.
Buonassisi (MIT) 2011
45
MIT OpenCourseWare
http://ocw.mit.edu
2.627 / 2.626 Fundamentals of Photovoltaics
Fall 2013
For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms.

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lec04 Charge Excitation in solar cellsss

  • 1. Buonassisi (MIT) 2011 Charge Excitation Lecture 4 – 9/20/2011 MIT Fundamentals of Photovoltaics 2.626/2.627 – Fall 2011 Prof. Tonio Buonassisi 1
  • 2. Buonassisi (MIT) 2011 2.626/2.627 Roadmap You Are Here 2
  • 3. Buonassisi (MIT) 2011 2.626/2.627: Fundamentals Charge Excitation Charge Drift/Diff usion Charge Separation Light Absorption Charge Collection Outputs Solar Spectrum Inputs Conversion Efficiency    Output Energy Input Energy Every photovoltaic device must obey: For most solar cells, this breaks down into: total absorption excitation drift/diffusion separation collection 3
  • 4. Buonassisi (MIT) 2011 Liebig’s Law of the Minimum S. Glunz, Advances in Optoelectronics 97370 (2007) Image by S. W. Glunz. License: CC-BY. Source: "High-Efficiency Crystalline Silicon Solar Cells." Advances in OptoElectronics (2007). total absorption excitation drift/diffusion separation collection 4
  • 5. Buonassisi (MIT) 2011 1. Describe phenomenologically how a “band gap” forms 2. Describe optical absorption in semiconductors as transitions of charge carriers on an energy band diagram. 3. Calculate the fraction of photons lost (not absorbed) by a semiconductor material with a given band gap, thickness, and reflectivity. 4. Calculate fraction of incident solar energy lost to “thermalization.” 5. Plot efficiency vs. bandgap, and denote specific materials. Learning Objectives: Solar Resource 5
  • 6. Buonassisi (MIT) 2011 Bandgap: Basic Description • The “bandgap energy” can most simply be understood, as the finite amount of energy needed to excite a highly localized electron into a delocalized, excited state in a semiconductor. Bonds: why stuff is tough. Excited electrons: why materials conduct Public domain image. Courtesy of Harry Bhadeshia. Used with permission. Public domain image. 6
  • 7. Buonassisi (MIT) 2011 Bandgap: Chemist’s Description • An atom in isolation has discrete electron energy levels. • As atoms move closer together, as in a crystal, electron wavefunctions overlap. Electrons are Fermions, meaning two particles cannot occupy the same state. Discrete atomic electron energy levels split, forming bands. • The gap between bands, denoting an energy range in which no stable orbitals exist, is the “bandgap”. 7
  • 8. Buonassisi (MIT) 2011 Bandgap: Physicist’s Description • The wavefunction of an electron in a crystal is described by the product of a periodic function (as follows from a periodic crystal lattice) with a plane wave envelope function (describing electron localization). Schematic of a repeating Coulomb potential in a crystal Atom electron potential Kronig-Penney idealization of a repeating Coulomb potential in a crystal (easier to solve numerically) Atom electron potential Solve Schrödinger’s equation  two possible solutions: (1)Electron wavefunction centered on atoms (bound state) (2)Electron wavefunction centered between atoms (excited state). For introductory reading, see C. Kittel, “Introduction to Solid State Physics” 8
  • 9. Buonassisi (MIT) 2011 Bandgap: Physicist’s Description • The wavefunction of an electron in a crystal is described by the product of a periodic function (as follows from a periodic crystal lattice) with a plane wave envelope function (describing electron localization). http://www.pwscf.org/ Electron isopotential surface in silicon For real systems, use (a) symmetry + group theory or (b) pseudopotentials + computer modeling to solve for electron wavefunctions. For many crystal structures, strong directional dependence of the wavefunction. For advanced reading, see P. Yu and M. Cardona, “Fundamentals of Semiconductors” Image by Lorenzo Paulatto on Wikipedia. License: CC-BY-SA. This content is excluded from our Creative Commons license. For more information, see http://ocw.mit.edu/fairuse. 9
  • 10. Buonassisi (MIT) 2011 Classes of Materials, based on Bandgap 10 Image by S-kei on Wikipedia. License: CC-BY-SA. This content is excluded from our Creative Commons license. For more information, see http://ocw.mit.edu/fairuse.
  • 11. Buonassisi (MIT) 2011 1. Describe phenomenologically how a “band gap” forms 2. Describe optical absorption in semiconductors as transitions of charge carriers on an energy band diagram. 3. Calculate the fraction of photons lost (not absorbed) by a semiconductor material with a given band gap, thickness, and reflectivity. 4. Calculate fraction of incident solar energy lost to “thermalization.” 5. Plot efficiency vs. bandgap, and denote specific materials. Learning Objectives: Solar Resource 11
  • 12. Buonassisi (MIT) 2011 Photons – Quanta of Light Particle-wave duality: Photons have discrete quanta of energy. Photons have momentum. Light can be polarized. Light can be diffracted. Light waves can destructively and constructively interfere. Eph  h  hc  pph  k  h  Relevant Equations: •Quantum theory describes the frequency dependence of photon energy. 12
  • 13. Buonassisi (MIT) 2011 Charge Promotion in Semiconductors E Conduction Band Valence Band Egap e- e- e- x Eph > Egap At photon energies above the band gap (i.e., shorter photon wavelengths), light is absorbed by the semiconductor and charge is promoted into the conduction band 13
  • 14. Buonassisi (MIT) 2011 Charge Promotion in Semiconductors E Conduction Band Valence Band Egap x Eph < Egap At photon energies less than the band gap (i.e., longer photon wavelengths), incident light is not efficiently absorbed. 14
  • 15. Buonassisi (MIT) 2011 I  Io  el Absorption Coefficient () for different materials (0.62 eV) (6.2 eV) 15 Courtesy of PVCDROM. Used with permission.
  • 16. Buonassisi (MIT) 2011 I  Io  el Absorption Coefficient () for different materials (0.62 eV) (6.2 eV) 16 Courtesy of PVCDROM. Used with permission.
  • 17. Buonassisi (MIT) 2011 1. Describe phenomenologically how a “band gap” forms 2. Describe optical absorption in semiconductors as transitions of charge carriers on an energy band diagram. 3. Calculate the fraction of photons lost (not absorbed) by a semiconductor material with a given band gap, thickness, and reflectivity. 4. Calculate fraction of incident solar energy lost to “thermalization.” 5. Plot efficiency vs. bandgap, and denote specific materials. Learning Objectives: Solar Resource 17
  • 18. Buonassisi (MIT) 2011 Thickness estimate for solar cell materials Based on these absorption coefficients, estimate a reasonable thickness for a GaAs solar cell, and a Si solar cell, such that 90% of the light at 800 nm is absorbed.  I  Io  el Solar Spectrum 18 Courtesy of PVCDROM. Used with permission.
  • 19. Buonassisi (MIT) 2011 1. Describe phenomenologically how a “band gap” forms 2. Describe optical absorption in semiconductors as transitions of charge carriers on an energy band diagram. 3. Calculate the fraction of photons lost (not absorbed) by a semiconductor material with a given band gap, thickness, and reflectivity. 4. Calculate fraction of incident solar energy lost to “thermalization.” 5. Plot efficiency vs. bandgap, and denote specific materials. Learning Objectives: Solar Resource 19
  • 20. Buonassisi (MIT) 2011 Thermalization E Conduction Band Valence Band Egap e- e- e- x Eph > Egap At photon energies above the band gap (i.e., shorter photon wavelengths), light is absorbed by the semiconductor and charge is promoted into the conduction band Photon energy in excess of the bandgap is lost due to “thermalization.” Thermalization Loss 20
  • 21. Buonassisi (MIT) 2011 Thermalization E Conduction Band Valence Band Egap e- e- x Eph > Egap At photon energies above the band gap (i.e., shorter photon wavelengths), light is absorbed by the semiconductor and charge is promoted into the conduction band Photon energy in excess of the bandgap is lost due to “thermalization.” e- h+ h+ Thermalization Losses 21
  • 22. Buonassisi (MIT) 2011 M.A. Green, Physica E 14, 65 (2002) Time Scale of Thermalization Courtesy of Elsevier, Inc., http://www.sciencedirect.com. Used with permission. 22
  • 23. Buonassisi (MIT) 2011 1. Describe phenomenologically how a “band gap” forms 2. Describe optical absorption in semiconductors as transitions of charge carriers on an energy band diagram. 3. Calculate the fraction of photons lost (not absorbed) by a semiconductor material with a given band gap, thickness, and reflectivity. 4. Calculate fraction of incident solar energy lost to “thermalization.” 5. Plot efficiency vs. bandgap, and denote specific materials. Learning Objectives: Solar Resource 23
  • 24. Buonassisi (MIT) 2011 Energy Losses: First Approx. Thermalization Losses (band gap too small) Non-Absorption Losses (band gap too large) 24
  • 25. Buonassisi (MIT) 2011 Approximation EQE, % Wavelength, nm 100 0 Photon wavelength corresponding to Eph = Egap Reality M.A. Green, “Radiative efficiency of state-of-the-art photovoltaic cells,” Progress in Photovoltaics (DOI: 10.1002/pip1147), 2011. Approximating Non-Absorption Losses EQE = External Quantum Efficiency, i.e., the efficiency at which free charge carriers are generated by incident photons on the device. © Wiley. All rights reserved. This content is excluded from our Creative Commons license. For more information, see http://ocw.mit.edu/fairuse. 25
  • 26. Buonassisi (MIT) 2011 Solar Capture: 1 µm Absorber, Single Pass c-Si (11%) Approximating Non-Absorption Losses Reality 26
  • 27. Buonassisi (MIT) 2011 Approximation Approximating Thermalization Losses Eph  Egap  Ethermalization If Eph  Egap, then Reality • For high-energy photons (Eph > ~3 x Eg), electron-electron interactions can exist, including multiple carrier (exciton) generation. • For really high-energy photons (keV–GeV range), core electron interactions, e--p+ pair formation, occur. 27
  • 28. Buonassisi (MIT) 2011 Representation of Maximum Power: Single Junction Energy Losses: First Approximation Balance between Thermalization and Non-Absorption Losses Please see lecture video for relevant graphs and explanation. 28
  • 29. Buonassisi (MIT) 2011 Advanced Concept: Tandem Cells (Multijunction Devices) 29
  • 30. Exceeding the S.-Q. Limit Please see lecture video for relevant graphs and explanation. Maximum Power: Multi-Junction Spectral Splitters 30
  • 32. Experiment 1 Silicon LIGHT Color‐ Wavelength‐ Photon Energy ) ( 24 . 1 ) ( ph m eV E    eV 2 . 3 eV 6 . 1 nm 380 nm 760 wavelength Photon Energy Courtesy of Ilan Gur. Used with permission. No Current Observed under light, regardless its color (wavelength) Ammeter © source unknown. All rights reserved. This content is excluded from our Creative Commons license. For more information, see http://ocw.mit.edu/fairuse. 32
  • 33. Experiment 2 Silicon Small Current under darkness , larger current under light Under darkness Under light Conclusion: The electric field of the battery is necessary to generate the photocurrent Ammeter © source unknown. All rights reserved. This content is excluded from our Creative Commons license. For more information, see http://ocw.mit.edu/fairuse. 33
  • 34. Experiment 4 Photocurrent n‐Si p‐Si Solar cell Observations: 4. The photocurrent depends on the “ Quality” of the material: (Purity , Defects , Cristallinity: monocrystalline, polycrystalline or amorphous) min depends on the material. 1. No need for a battery to detect a photocurrent min    2. The photocurrent is generated if Ammeter © source unknown. All rights reserved. This content is excluded from our Creative Commons license. For more information, see http://ocw.mit.edu/fairuse. 34
  • 35. Buonassisi (MIT) 2011 Light Absorption in Organic Materials 35
  • 36. Buonassisi (MIT) 2011 Courtesy of Ilan Gur. Used with permission. 36
  • 37. Buonassisi (MIT) 2011 Courtesy of Ilan Gur. Used with permission. 37
  • 38. Buonassisi (MIT) 2011 Courtesy of Ilan Gur. Used with permission. 38
  • 39. Buonassisi (MIT) 2011 Courtesy of Ilan Gur. Used with permission. 39
  • 40. Buonassisi (MIT) 2011 Courtesy of Ilan Gur. Used with permission. 40
  • 41. Buonassisi (MIT) 2011 Courtesy of Ilan Gur. Used with permission. 41
  • 42. Buonassisi (MIT) 2011 Light Absorption in Nanomaterials 42
  • 43. Buonassisi (MIT) 2011 Light Absorption in Nanomaterials In nanomaterials, particle size can be comparable to the electron wavefunction in at least one dimension, resulting in “quantum confinement”. Alivisatos Group Courtesy of A. Paul Alivisatos. Used with permission. 43
  • 44. Buonassisi (MIT) 2011 Light Absorption in Nanomaterials Quantum confinement (function of particle size, shape) changes light absorption characteristics drastically, for the same material. See the image at the link below of nanoparticles of the same material in suspension, with drastically different absorption characteristics. 44 Image removed due to copyright restrictions.
  • 45. Bandgap vs. Length and Diameter Li, L. S., J. T. Hu, W. D. Yang and A. P. Alivisatos (2001). "Band gap variation of size- and shape-controlled colloidal CdSe quantum rods." Nano Letters 1(7): 349-351. Courtesy of A. Paul Alivisatos. Used with permission. Buonassisi (MIT) 2011 45
  • 46. MIT OpenCourseWare http://ocw.mit.edu 2.627 / 2.626 Fundamentals of Photovoltaics Fall 2013 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms.