The document proposes a novel unsymmetrical FinFET structure and simulates its performance using TCAD simulation software. Key findings include:
1) The unsymmetrical FinFET with a Fin width of 9nm shows an improved Ion/Ioff ratio of around 103 compared to symmetrical FinFET structures.
2) Transfer characteristics of the unsymmetrical nFinFET show better subthreshold characteristics compared to underlap and overlap FinFET structures.
3) A CMOS inverter designed using the optimized nFinFET and pFinFET shows near ideal transient and DC responses.
THRESHOLD VOLTAGE CONTROL SCHEMES IN FINFETSVLSICS Design
Conventionally polysilicon is used in MOSFETs for gate material. Doping of polysilicon and thus changing the workfunction is carried out to change the threshold voltage. Additionally polysilicon is not favourable as gate material for smaller dimensional devices because of its high thermal budget process and degradation due to the depletion of the doped polysilicon, thus metal gate is preferred over polysilicon. Control of workfunction in metal gate is a challenging task. The use of metal alloys as gate materials for variable gate workfunction has been already reported in literature. In this work various threshold voltage techniques has been analyzed and a novel aligned dual metal gate technique is proposed for threshold voltage control in FinFETs.
The document discusses FinFET transistors. It provides a history of FinFET development starting in 1998. FinFETs were created to allow Moore's Law to continue by addressing short channel effects in traditional planar MOSFETs as devices continued scaling. FinFETs use a fin-like gate structure to improve gate control and reduce leakage currents. The document outlines FinFET structure, characteristics, fabrication process, advantages, applications and the future of FinFET technology as it aims to scale below 5nm.
Physical Scaling Limits of FinFET Structure: A Simulation StudyVLSICS Design
This document summarizes a simulation study on the physical scaling limits of FinFET structures. It analyzes the scaling limits of double gate underlap and triple gate overlap FinFET structures using 2D and 3D computer simulations. Key findings include:
1) For double gate FinFETs, DIBL and SS increase abruptly when the ratio of gate length to fin thickness (L/Tfin) goes below 1.5, limiting scaling.
2) For triple gate FinFETs, both fin thickness and height can control short channel effects, but fin thickness is found to be a more dominant parameter. DIBL and SS increase as the ratio of effective gate length to fin thickness (Leff/Tfin) decreases
Physical Scaling Limits of FinFET Structure: A Simulation StudyVLSICS Design
In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and Triple Gate (TG) overlap FinFET structure using 2D and 3D computer simulations respectively. To analyze the scaling limits of FinFET structure, simulations are performed using three variables: finthickness, fin-height and gate-length. From 2D simulation of DG FinFET, it is found that the gate-length (L) and fin-thickness (Tfin) ratio plays a key role while deciding the performance of the device. Drain Induced Barrier Lowering (DIBL) and Subthreshold Swing (SS) increase abruptly when (L/Tfin) ratio goes below 1.5. So, there will be a trade-off in between SCEs and on- current of the device since on-off current ratio is found to be high at small dimensions. From 3D simulation study on TG FinFET, It is found that both fin-thickness (Tfin) and fin-height (Hfin) can control the SCEs. However, Tfin is found to be more dominant parameter than Hfin while deciding the SCEs. DIBL and SS increase as (Leff/Tfin) ratio decreases. The (Leff/Tfin) ratio can be reduced below 1.5 unlike DG FinFET for the same SCEs. However,
as this ratio approaches to 1, the SCEs can go beyond acceptable limits for TG FinFET structure. The relative ratio of Hfin and Tfin should be maximum at a given Tfin and Leff to get maximum on-current per unit width. However, increasing Hfin degrades the fin stability and degrades SCEs.
Impact of parameter variations and optimization on dg pnin tunnel fetVLSICS Design
The downscaling of conventional MOSFETs has come to its fundamental limits. TFETs are very attractive
devices for low power applications because of their low off-current and potential for smaller sub threshold
slope. In this paper, the impact of various parameter variations on the performance of a DG-PNIN Tunnel
field effect transistor is investigated. In this work, variations in gate oxide material, source doping, channel
doping, drain doping, pocket doping and body thickness are studied and all these parameters are optimized
as performance boosters to give better current characteristics parameters. After optimization with all these
performance boosters, the device has shown improved performance with increased on-current and reduced
threshold voltage and the Ion/Ioff ratio is > 106.
HIGH FIN WIDTH MOSFET USING GAA STRUCTUREVLSICS Design
This paper describes the design and optimization of gate-all-around (GAA) MOSFETs structures. The optimum value of Fin width and Fin height are investigated for superior subthreshold behavior. Also the performance of Fin shaped GAA with gate oxide HfO2 are simulated and compared with conventional gate oxide SiO2 for the same structure. As a result, it was observed that the GAA with high K dielectric gate oxide has more possibility to optimize the Fin width with improved performance. All the simulations are performed on 3-D TCAD device simulator.
Review of Fin FET Technology and Circuit Design Challengesrbl87
1. FinFET technology uses a fin-like gate structure to improve gate control and reduce leakage compared to planar CMOS. It allows continued transistor scaling beyond limits of planar devices.
2. There are manufacturing challenges for FinFETs including fin patterning and variability, doping, stress application, and parasitic capacitance. Circuit design challenges include adapting SRAM cells and EDA tools to the 3D FinFET structure.
3. FinFETs are now used for high performance logic but new materials and design approaches are still being explored to further improve FinFET technology and address remaining challenges in manufacturing and circuit design.
Review of Fin FET Technology and Circuit Design ChallengesIJERA Editor
Considering the difficulties in planar CMOS transistor scaling to secure an acceptable gate to channel control
FinFET based multi-gate (MuGFET) devices have been proposed as a technology option for replacing the
existing technology. The desirability of FinFET that it’s operation principle is same as CMOS process. This
permits to lengthening the gate scaling beyond the planar transistor limits, sustaining a steep subthreshold slope,
better performance with bias voltage scaling and good matching due to low doping concentration in the channel.
There are, still, several challenges and limitations that FinFET technology has to face to be competitive with
other technology options: Fin shape, pitch, isolation, doping, crystallographic orientation and stressing as well as
device parasitic, performance and patterning approaches will be discussed.
THRESHOLD VOLTAGE CONTROL SCHEMES IN FINFETSVLSICS Design
Conventionally polysilicon is used in MOSFETs for gate material. Doping of polysilicon and thus changing the workfunction is carried out to change the threshold voltage. Additionally polysilicon is not favourable as gate material for smaller dimensional devices because of its high thermal budget process and degradation due to the depletion of the doped polysilicon, thus metal gate is preferred over polysilicon. Control of workfunction in metal gate is a challenging task. The use of metal alloys as gate materials for variable gate workfunction has been already reported in literature. In this work various threshold voltage techniques has been analyzed and a novel aligned dual metal gate technique is proposed for threshold voltage control in FinFETs.
The document discusses FinFET transistors. It provides a history of FinFET development starting in 1998. FinFETs were created to allow Moore's Law to continue by addressing short channel effects in traditional planar MOSFETs as devices continued scaling. FinFETs use a fin-like gate structure to improve gate control and reduce leakage currents. The document outlines FinFET structure, characteristics, fabrication process, advantages, applications and the future of FinFET technology as it aims to scale below 5nm.
Physical Scaling Limits of FinFET Structure: A Simulation StudyVLSICS Design
This document summarizes a simulation study on the physical scaling limits of FinFET structures. It analyzes the scaling limits of double gate underlap and triple gate overlap FinFET structures using 2D and 3D computer simulations. Key findings include:
1) For double gate FinFETs, DIBL and SS increase abruptly when the ratio of gate length to fin thickness (L/Tfin) goes below 1.5, limiting scaling.
2) For triple gate FinFETs, both fin thickness and height can control short channel effects, but fin thickness is found to be a more dominant parameter. DIBL and SS increase as the ratio of effective gate length to fin thickness (Leff/Tfin) decreases
Physical Scaling Limits of FinFET Structure: A Simulation StudyVLSICS Design
In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and Triple Gate (TG) overlap FinFET structure using 2D and 3D computer simulations respectively. To analyze the scaling limits of FinFET structure, simulations are performed using three variables: finthickness, fin-height and gate-length. From 2D simulation of DG FinFET, it is found that the gate-length (L) and fin-thickness (Tfin) ratio plays a key role while deciding the performance of the device. Drain Induced Barrier Lowering (DIBL) and Subthreshold Swing (SS) increase abruptly when (L/Tfin) ratio goes below 1.5. So, there will be a trade-off in between SCEs and on- current of the device since on-off current ratio is found to be high at small dimensions. From 3D simulation study on TG FinFET, It is found that both fin-thickness (Tfin) and fin-height (Hfin) can control the SCEs. However, Tfin is found to be more dominant parameter than Hfin while deciding the SCEs. DIBL and SS increase as (Leff/Tfin) ratio decreases. The (Leff/Tfin) ratio can be reduced below 1.5 unlike DG FinFET for the same SCEs. However,
as this ratio approaches to 1, the SCEs can go beyond acceptable limits for TG FinFET structure. The relative ratio of Hfin and Tfin should be maximum at a given Tfin and Leff to get maximum on-current per unit width. However, increasing Hfin degrades the fin stability and degrades SCEs.
Impact of parameter variations and optimization on dg pnin tunnel fetVLSICS Design
The downscaling of conventional MOSFETs has come to its fundamental limits. TFETs are very attractive
devices for low power applications because of their low off-current and potential for smaller sub threshold
slope. In this paper, the impact of various parameter variations on the performance of a DG-PNIN Tunnel
field effect transistor is investigated. In this work, variations in gate oxide material, source doping, channel
doping, drain doping, pocket doping and body thickness are studied and all these parameters are optimized
as performance boosters to give better current characteristics parameters. After optimization with all these
performance boosters, the device has shown improved performance with increased on-current and reduced
threshold voltage and the Ion/Ioff ratio is > 106.
HIGH FIN WIDTH MOSFET USING GAA STRUCTUREVLSICS Design
This paper describes the design and optimization of gate-all-around (GAA) MOSFETs structures. The optimum value of Fin width and Fin height are investigated for superior subthreshold behavior. Also the performance of Fin shaped GAA with gate oxide HfO2 are simulated and compared with conventional gate oxide SiO2 for the same structure. As a result, it was observed that the GAA with high K dielectric gate oxide has more possibility to optimize the Fin width with improved performance. All the simulations are performed on 3-D TCAD device simulator.
Review of Fin FET Technology and Circuit Design Challengesrbl87
1. FinFET technology uses a fin-like gate structure to improve gate control and reduce leakage compared to planar CMOS. It allows continued transistor scaling beyond limits of planar devices.
2. There are manufacturing challenges for FinFETs including fin patterning and variability, doping, stress application, and parasitic capacitance. Circuit design challenges include adapting SRAM cells and EDA tools to the 3D FinFET structure.
3. FinFETs are now used for high performance logic but new materials and design approaches are still being explored to further improve FinFET technology and address remaining challenges in manufacturing and circuit design.
Review of Fin FET Technology and Circuit Design ChallengesIJERA Editor
Considering the difficulties in planar CMOS transistor scaling to secure an acceptable gate to channel control
FinFET based multi-gate (MuGFET) devices have been proposed as a technology option for replacing the
existing technology. The desirability of FinFET that it’s operation principle is same as CMOS process. This
permits to lengthening the gate scaling beyond the planar transistor limits, sustaining a steep subthreshold slope,
better performance with bias voltage scaling and good matching due to low doping concentration in the channel.
There are, still, several challenges and limitations that FinFET technology has to face to be competitive with
other technology options: Fin shape, pitch, isolation, doping, crystallographic orientation and stressing as well as
device parasitic, performance and patterning approaches will be discussed.
FinFET technology uses a fin-like gate structure rather than a planar structure to help enable continued transistor scaling. FinFETs have a thin vertical "fin" structure rather than a flat design. This allows for better control of the channel and helps address issues like short channel effects. FinFETs can be fabricated using either a gate-first or gate-last process and involve patterning thin fins on a silicon-on-insulator wafer and then adding gate material. FinFETs offer benefits like reduced leakage currents and separate control of threshold voltages.
This document discusses FinFET technology. It begins with an introduction to FinFETs, explaining that they are a type of double-gate CMOS that offers advantages over traditional CMOS for scaling to short gate lengths. It then discusses why FinFET technology is needed as traditional CMOS scaling faces challenges from subthreshold and gate leakage. It provides details on double-gate FET structure and operation, including how it controls short-channel effects better than single-gate FETs. It also covers FinFET features, applications, challenges and concludes that FinFETs can help continue CMOS scaling if key issues like fin patterning and gate work functions are addressed.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Electrical characterization of si nanowire GAA-TFET based on dimensions downs...IJECEIAES
This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (V T ). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics.
A Survey on Architectural Modifications for Improving Performances of Devices...IRJET Journal
This document summarizes research on improving the performance of FinFET devices through architectural modifications. FinFETs are promising replacements for bulk CMOS beyond the 22nm node due to their ability to better control short channel effects. Various techniques are discussed to enhance FinFET performance in terms of power, speed, and area. These include optimizing the fin geometry, gate work functions, strain engineering, and reducing parasitic capacitance. FinFETs also show improvements in noise reduction, scalability, and applications such as SRAM cells compared to planar CMOS devices. Overall, the document reviews how FinFET design modifications can help address challenges in continued device scaling for low power applications.
Performance analysis of ultrathin junctionless double gate vertical MOSFETsjournalBEEI
This document summarizes a study that analyzes the performance of ultrathin junctionless double gate vertical MOSFETs (JLDGVM) and compares them to conventional junctioned double gate vertical MOSFETs (JDGVM) through process and device simulation. The simulation results show that the drain current (ID) of n-type and p-type JLDGVM is enhanced by 57% and 60% respectively compared to JDGVM. Additionally, JLDGVM exhibit a larger ION/IOFF ratio and smaller subthreshold slope, implying better power consumption and faster switching capability than JDGVM. The junctionless configuration eliminates challenges associated with forming ultra-shallow junctions between the source/
A Novel Field Effect Diode (Fed) Structure For Improvement Of Ion/Ioff Ratio ...IOSR Journals
This document presents a novel Field Effect Diode (FED) structure called Silicon On Raised Insulator FED (SORI-FED) that aims to improve the ION/IOFF ratio for nanoscale devices. It summarizes that for channel lengths less than 75nm, regular FED structures cannot be turned off effectively. While previous structures like Side contacted FED (S-FED) and Modified FED (M-FED) addressed this, band-to-band tunneling (BTBT) was found to increase OFF-state current. The proposed SORI-FED includes an oxide layer in the channel to suppress BTBT. Simulation results showed SORI-FED had an 8
This document presents a novel Field Effect Diode (FED) structure called Silicon On Raised Insulator FED (SORI-FED) that aims to improve the ION/IOFF ratio for nanoscale devices. It summarizes that for channel lengths less than 75nm, regular FED structures cannot be turned off effectively. While previous structures like Side contacted FED (S-FED) and Modified FED (M-FED) addressed this, band-to-band tunneling (BTBT) was found to increase OFF-state current. The proposed SORI-FED includes an oxide layer in the channel to suppress BTBT. Simulation results showed SORI-FED achieved an eight
Performance Comparison of CMOS and Finfet Based Circuits At 45nm Technology U...IJERA Editor
According to the Moore’s Law, the number of transistors in a unit chip area double every two years. But the existing technology of integrated circuit formation is posing limitations to this law. CMOS technology shows certain limitations as the device is reduced more and more in the nanometer regime out of which power dissipation is an important issue. FinFET is evolving to be a promising technology in this regard. This paper aims to analyze and compare the characteristics of CMOS and FinFET circuits at 45nm technology. Inverter circuit is implemented in order to study the basic characteristics such as voltage transfer characteristics, leakage current and power dissipation. Further the efficiency of FinFET to reduce power as compared to CMOS is proved using SRAM circuit. The results show that the average power is reduced by 92.93% in read operation and by 97.8% in write operation.
This document summarizes the performance enhancement and characterization of a junctionless vertical slit field effect transistor (JLVeSFET). Key findings from simulations include:
1) The JLVeSFET shows an optimized subthreshold slope of 65mV/decade and OFF current of ~10-18A/μm for a 50nm radius device with a high-k dielectric.
2) Using a high-k dielectric (Si3N4) instead of SiO2 increases the Ion/Ioff ratio to ~1011 and reduces the subthreshold slope to 63mV/decade.
3) Increasing the gate doping concentration reduces the subthreshold slope slightly while increasing the Ion/
Operational transconductance amplifier-based comparator for high frequency a...IJECEIAES
Fin field-effect transistor (FinFET) based analog circuits are gaining importance over metal oxide semiconductor field effect transistor (MOSFET) based circuits with stability and high frequency operations. Comparator that forms the sub block of most of the analog circuits is designed using operational transconductance amplifier (OTA). The OTA is designed using new design procedures and the comparator circuit is designed integrating the sub circuits with OTA. The building blocks of the comparator design such as input level shifter, differential pair with cascode stage and class AB amplifier for output swing are designed and integrated. Folded cascode circuit is used in the feedback path to maintain the common mode input value to a constant, so that the differential pair amplifies the differential signal. The gain of the comparator is achieved to be greater than 100 dB, with phase margin of 65°, common mode rejection ratio (CMRR) of above 70 dB and output swing from rail to rail. The circuit provides unity gain bandwidth of 5 GHz and is suitable for high sampling rate data converter circuits.
This document discusses the design and analysis of SRAM cells using tunneling field-effect transistors (TFETs) for ultralow-voltage operation. It analyzes the characteristics of TFET devices that impact SRAM performance, such as delayed saturation and broad crossover regions. Several published TFET SRAM cell designs are evaluated using technology computer-aided design simulations. The simulations show that the unidirectional conduction of TFETs degrades write stability. A novel 7-transistor driverless TFET SRAM cell is proposed to improve read, write, and hold stability through decoupled read paths and asymmetrical write-assist techniques.
IMPACT OF DEVICE PARAMETERS OF TRIPLE GATE SOI-FINFET ON THE PERFORMANCE OF C...VLSICS Design
This document summarizes a simulation-based study of the impact of device parameters on the performance of 22nm triple gate SOI FinFETs. Device parameters like fin width, fin height, and gate oxide thickness were varied and their effects on short channel effects, on-current, off-current, and gate leakage current were analyzed. It was found that increasing fin width and height improved on-current but also increased off-current and short channel effects. Reducing fin thickness lowered off-current, while reducing fin height decreased gate leakage. The performance and static power of a CMOS inverter built using the FinFETs was also evaluated.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
DC performance analysis of a 20nm gate length n-type Silicon GAA junctionless...IJECEIAES
This summary provides the key details about the document in 3 sentences:
The document analyzes the DC performance of a 20nm gate length n-type silicon gate-all-around junctionless transistor using 3D quantum transport modeling. Simulation results show the device has a threshold voltage of 0.55V, subthreshold slope of 63mV/decade approaching the ideal value, an on/off current ratio of 10e+10, and a drain-induced barrier lowering of 98mV/V. Overall, the junctionless gate-all-around transistor shows improved short channel effects compared to an inversion-mode gate-all-around transistor.
Design of Nanoscale 3-T DRAM using FinFETIOSR Journals
This document describes the design of a 3-transistor (3T) dynamic random access memory (DRAM) cell using both CMOS and FinFET technologies at the 32nm node. Simulation results show that the FinFET-based DRAM cell has lower average power (9.5136uW vs 10.869uW), lower power dissipation (144.7353uW vs 235.2313uW), and much lower leakage power (2.4303nW vs 1.8781uW) compared to the CMOS-based cell. FinFET devices are able to better control short channel effects at small scales compared to planar CMOS, enabling lower power DRAM designs. The document provides
Segmentation of Overlapped and Touching Human Chromosome imagesIOSR Journals
This document describes the design and analysis of a 4-bit Johnson counter using 16nm FinFET technology. It first discusses the advantages of FinFET over conventional CMOS for reducing short channel effects at small scales. It then presents the structure and manufacturing process of FinFET. A single-edge triggered D flip-flop using 9 FinFET transistors is proposed for use in the Johnson counter. The 4-bit Johnson counter is implemented by connecting 4 of these D flip-flops in a ring configuration. Simulation results show the waveforms of the D flip-flop and Johnson counter operating at 500MHz with 0.85V power supply. Compared to a conventional flip-flop-based counter, the proposed FinFET Johnson
This document describes the design and analysis of a 4-bit Johnson counter using 16nm FinFET technology. FinFETs help address short channel effects in smaller transistors and reduce power consumption compared to conventional CMOS. The document first discusses the FinFET structure and manufacturing process. It then presents the design of a low-power single edge-triggered D flip-flop using FinFETs. A 4-bit Johnson counter is implemented using four of these D flip-flops in a ring configuration. Simulation results show the FinFET D flip-flop consumes less power and the Johnson counter has lower power and area compared to designs using traditional flip-flops.
Geometric and process design of ultra-thin junctionless double gate vertical ...IJECEIAES
The junctionless MOSFET architectures appear to be attractive in realizing the Moore’s law prediction. In this paper, a comprehensive 2-D simulation on junctionless vertical double-gate MOSFET (JLDGVM) under geometric and process consideration was introduced in order to obtain excellent electrical characteristics. Geometrical designs such as channel length (Lch) and pillar thickness (Tp) were considered and the impact on the electrical performance was analyzed. The influence of doping concentration and metal gate work function (WF) were further investigated for achieving better performance. The results show that the shorter Lch can boost the drain current (ID) of n-JLDGVM and p-JLDGVM by approximately 68% and 70% respectively. The ID of the n-JLVDGM and p-JLVDGM could possibly boost up to 42% and 78% respectively as the Tp is scaled down from 11nm to 8nm. The channel doping (Nch) is also a critical parameter, affecting the electrical performance of both n-JLDGVM and p-JLDGVM in which 15% and 39% improvements are observed in their respective ID as the concentration level is increased from 1E18 to 9E18 atom/cm3. In addition, the adjustment of threshold voltage can be realized by varying the metal WF.
Statistical Modelling of ft to Process Parameters in 30 NM Gate Length FinfetsVLSICS Design
This paper investigates the effect of process variations on unity gain frequency (ft) in 30 nm gate length FinFET by performing extensive TCAD simulations. Six different geometrical parameters, channel doping, source/drain doping and gate electrode work function are studied for their sensitivity on ft
. It is found that ft is more sensitive to gate length, underlap, gate-oxide thickness, channel and Source/Drain doping and less sensitive to source/drain width and length, and work function variations. Statistical modelling has been performed for ft through design of experiment with respect to sensitive parameters. The model has been validated through a comparison between random set of experimental data simulations and predicted values obtained from the model.
Understanding Inductive Bias in Machine LearningSUTEJAS
This presentation explores the concept of inductive bias in machine learning. It explains how algorithms come with built-in assumptions and preferences that guide the learning process. You'll learn about the different types of inductive bias and how they can impact the performance and generalizability of machine learning models.
The presentation also covers the positive and negative aspects of inductive bias, along with strategies for mitigating potential drawbacks. We'll explore examples of how bias manifests in algorithms like neural networks and decision trees.
By understanding inductive bias, you can gain valuable insights into how machine learning models work and make informed decisions when building and deploying them.
FinFET technology uses a fin-like gate structure rather than a planar structure to help enable continued transistor scaling. FinFETs have a thin vertical "fin" structure rather than a flat design. This allows for better control of the channel and helps address issues like short channel effects. FinFETs can be fabricated using either a gate-first or gate-last process and involve patterning thin fins on a silicon-on-insulator wafer and then adding gate material. FinFETs offer benefits like reduced leakage currents and separate control of threshold voltages.
This document discusses FinFET technology. It begins with an introduction to FinFETs, explaining that they are a type of double-gate CMOS that offers advantages over traditional CMOS for scaling to short gate lengths. It then discusses why FinFET technology is needed as traditional CMOS scaling faces challenges from subthreshold and gate leakage. It provides details on double-gate FET structure and operation, including how it controls short-channel effects better than single-gate FETs. It also covers FinFET features, applications, challenges and concludes that FinFETs can help continue CMOS scaling if key issues like fin patterning and gate work functions are addressed.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Electrical characterization of si nanowire GAA-TFET based on dimensions downs...IJECEIAES
This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (V T ). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics.
A Survey on Architectural Modifications for Improving Performances of Devices...IRJET Journal
This document summarizes research on improving the performance of FinFET devices through architectural modifications. FinFETs are promising replacements for bulk CMOS beyond the 22nm node due to their ability to better control short channel effects. Various techniques are discussed to enhance FinFET performance in terms of power, speed, and area. These include optimizing the fin geometry, gate work functions, strain engineering, and reducing parasitic capacitance. FinFETs also show improvements in noise reduction, scalability, and applications such as SRAM cells compared to planar CMOS devices. Overall, the document reviews how FinFET design modifications can help address challenges in continued device scaling for low power applications.
Performance analysis of ultrathin junctionless double gate vertical MOSFETsjournalBEEI
This document summarizes a study that analyzes the performance of ultrathin junctionless double gate vertical MOSFETs (JLDGVM) and compares them to conventional junctioned double gate vertical MOSFETs (JDGVM) through process and device simulation. The simulation results show that the drain current (ID) of n-type and p-type JLDGVM is enhanced by 57% and 60% respectively compared to JDGVM. Additionally, JLDGVM exhibit a larger ION/IOFF ratio and smaller subthreshold slope, implying better power consumption and faster switching capability than JDGVM. The junctionless configuration eliminates challenges associated with forming ultra-shallow junctions between the source/
A Novel Field Effect Diode (Fed) Structure For Improvement Of Ion/Ioff Ratio ...IOSR Journals
This document presents a novel Field Effect Diode (FED) structure called Silicon On Raised Insulator FED (SORI-FED) that aims to improve the ION/IOFF ratio for nanoscale devices. It summarizes that for channel lengths less than 75nm, regular FED structures cannot be turned off effectively. While previous structures like Side contacted FED (S-FED) and Modified FED (M-FED) addressed this, band-to-band tunneling (BTBT) was found to increase OFF-state current. The proposed SORI-FED includes an oxide layer in the channel to suppress BTBT. Simulation results showed SORI-FED had an 8
This document presents a novel Field Effect Diode (FED) structure called Silicon On Raised Insulator FED (SORI-FED) that aims to improve the ION/IOFF ratio for nanoscale devices. It summarizes that for channel lengths less than 75nm, regular FED structures cannot be turned off effectively. While previous structures like Side contacted FED (S-FED) and Modified FED (M-FED) addressed this, band-to-band tunneling (BTBT) was found to increase OFF-state current. The proposed SORI-FED includes an oxide layer in the channel to suppress BTBT. Simulation results showed SORI-FED achieved an eight
Performance Comparison of CMOS and Finfet Based Circuits At 45nm Technology U...IJERA Editor
According to the Moore’s Law, the number of transistors in a unit chip area double every two years. But the existing technology of integrated circuit formation is posing limitations to this law. CMOS technology shows certain limitations as the device is reduced more and more in the nanometer regime out of which power dissipation is an important issue. FinFET is evolving to be a promising technology in this regard. This paper aims to analyze and compare the characteristics of CMOS and FinFET circuits at 45nm technology. Inverter circuit is implemented in order to study the basic characteristics such as voltage transfer characteristics, leakage current and power dissipation. Further the efficiency of FinFET to reduce power as compared to CMOS is proved using SRAM circuit. The results show that the average power is reduced by 92.93% in read operation and by 97.8% in write operation.
This document summarizes the performance enhancement and characterization of a junctionless vertical slit field effect transistor (JLVeSFET). Key findings from simulations include:
1) The JLVeSFET shows an optimized subthreshold slope of 65mV/decade and OFF current of ~10-18A/μm for a 50nm radius device with a high-k dielectric.
2) Using a high-k dielectric (Si3N4) instead of SiO2 increases the Ion/Ioff ratio to ~1011 and reduces the subthreshold slope to 63mV/decade.
3) Increasing the gate doping concentration reduces the subthreshold slope slightly while increasing the Ion/
Operational transconductance amplifier-based comparator for high frequency a...IJECEIAES
Fin field-effect transistor (FinFET) based analog circuits are gaining importance over metal oxide semiconductor field effect transistor (MOSFET) based circuits with stability and high frequency operations. Comparator that forms the sub block of most of the analog circuits is designed using operational transconductance amplifier (OTA). The OTA is designed using new design procedures and the comparator circuit is designed integrating the sub circuits with OTA. The building blocks of the comparator design such as input level shifter, differential pair with cascode stage and class AB amplifier for output swing are designed and integrated. Folded cascode circuit is used in the feedback path to maintain the common mode input value to a constant, so that the differential pair amplifies the differential signal. The gain of the comparator is achieved to be greater than 100 dB, with phase margin of 65°, common mode rejection ratio (CMRR) of above 70 dB and output swing from rail to rail. The circuit provides unity gain bandwidth of 5 GHz and is suitable for high sampling rate data converter circuits.
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finfet.docx
1. Performance Enhnaced Unsymmetrical FinFET and its
Applications
Govind S Patel1
, Suman L Tripathi2
, Sandhya Awasthi3
1,2Lovely professional University, Phagwara Punjab
3KEC, Gaziabaad, U P
Abstract: A steep subthershold slope novel
usymmetrical FinFET is proposed for gate lenght 9nm
with improved performance in terms of Ion/Ioff ratio in
comparison to existing symmetrical structure.
Proformance is furture optimised in terms of doping
variations and under lap behaviour of FinFET. High-K
dielectric material oxide and metal gate contact of high
work function incorporated and performance compared.
pFinFET and nFinFET both simulated togather to
obtain ideal characteristics required to match in CMOS
technology. 2D/3D Visual TCAD device simulator
utilised in design of all FinFET structures.
Keyword: Unsymmetrical FinFET, Subthreshold slope,
Underlap Gate
I. Introduction
FinFET is potential candidate to meet scalling needs
below 20nm technology node due to its excellent
subthreshold characteristics and high on and off state
current[1-4]. Increse in channel lenght vertically
improves the drive current 3 fold and made it suitable
for high speed operations. In Gate all around the fin
increases Gate control over the channel, made it more
compatible in CMOS as compared to bulk MOSFET
strucures[5]. Introduction to High-k dielectric materials
further improves FinFET performance and reduces
drain induced barrier lowering[6-7]. Optimum channel/
bulk region doping is key parameter to get enhanced
subtherhold performance of FinFET with similar
domensions on SOI wafer or Bulk Structure[8]. FinFET
with bottom spacer exploits shallower junction
behaviour to reduce off sate leakage and simultaneously
use of high doping in inactive fin contribute to the
advantages of punchthrough stopper [9-10]. Reliability
and process related issues still serious concern for
FinFET structures [11-13] in terms of future scalability
and performance parameters. Metal gate work function
variability of pFinFET had been compared for Si and
Ge interface to further optimised pFinFET performance
[14]. Environmental variability such as temperature was
discussed mainly to check variations in fin width, fin
height, gate length, metal work function and oxide
thickness [15]. Tapered Fin Shape that is different width
at top and bottomof Fin, also plays an important role in
ON and OFF characteristics of transistors for some
specified applications [16]. Difficulties and doping
related variations had been minimised through junction-
less FinFET structures and performance enhance to get
high value of Ion/Ioff ratio[17-18]. Other material such
Ge introduced to make heterojunction Si, Ge interface
to get better subthershold performance and
improvement in subthreshold parameters [19]. The
position of Fin based channel from source and drain
side could be other parameter for future investigations.
The important concern is to get High value of Ion/Ioff
current ratio as well as suppressed short channel effects
(SCE). The design must be compatible for CMOS
based circuit applications.
In this paper a novel unsymmetrical FinFET structure
proposed and performance is optimised and compared
with similar symmetrical FinFET structures in terms of
doping variations, gate contact and oxide material.
Unsymmetrical pFinFET, nFinFET for 9nm fin width
designed on Visual TCAD 2D/3D device simulator and
performance compared. Further a CMOS inverter
designed using these n and pFinFETs to get ideal
characteristics. It is observed that proposed FinFET
structres are compatible for analog and digital
applications. Finaaly nFinFET and pFinFET is
implemented as COMS inverter as a devices and
showing near to ideal DC and transient response.
II. Device Design and Structure
Visual TCAD, 2-Dimensional device simulator is used
to design a novel unsymmetrical FinFET and optimized
device performance in low operating voltage regions.
The body thickness varied between 10nm, Source/
Drain doping kept in range varied between 1e18-
1e20cm-3 keeping channel doping constant 1e16cm-3.
High–K Dielectric material HfO2(25) replacing
SiO2(3.9) is preferred under gate contact. Dielectric
constant mainly affects off state current but on state
current have less variation which further supports the
steepness of subthreshold curve. A 2-D unsymmetrical
FET is shown in Fig.1 is designed for 10nm body
thickness 15nm gate length and source/channel/drain
length 10nm/20nm/10nm respectively. Fin Thickness
2. (Wfin) is varied between 8-11nm with Hfin 20nm. Figure
2 shows a symmetrical underlap FinFET structure
similar in dimension as in Fig.2.
Fig.1 2D Unsymmetrical FinFET
Fig.2 2D symmetrical underlap FinFET structure
Fig. 3 2-D view of CMOS based upon FinFET structure
of nFinFET and pFinFET
Finally a FinFET based cmos structure proposed, is
depicted in Fig.3 to observe the compatibility of
proposed unsymmetrical nFinFET and pFinFET for
CMOS technology. The channel potential of
unsymmetrial FinFET depicted in Fig4. The figure
shows that channel potential increases with gate
voltage. Fig.5 shows energy band diagram of
unsymmetrical FinFET. The electric Field of
unsymmetrical FinFET described in Fig.6. It shows that
electric field decreases with increase in gate voltage.
Fig. 4 Channel Potential of Unsymmetrical FinFET
along x-axis
Fig.5 Energy band diagram of Unsymmetrical FinFET
along x-axis
3. Fig.6 Electric Field of Unsymmetrical FinFET along x-
axis
III. Results and Discussion
The Proposed unsymmetrical nFinFET designed on
visual TACD is simulated for gate voltage Vgs variation
(0-1)V keeping drain voltage constant. Fig.7 shows
transfer characteristics of unsymmetrical nFinFET with
constant channel doping 1e16cm-3. This shows a good
improvement in Ion/Ioff ratio ~103 of overlap FinFET
from source side only even with Fin width 9nm. Fig.8
shows variton in Id vs Vgs characteritics depending on
Fin width variation between 9-11nm. This describes
that unsymmetrical FinFET with 9nm Fin width ahs
more steep subthershold characteristic and better Ion/Ioff
ratio. Fig.9 depicts the Transfer characteristics of
unsymmetrical nFinFET with under and overlap
FinFET(either from source side or both source/drain
side ) for Channel doping 1e18cm-3. The unsymmetrical
FinFET have better characteristics as compared all other
FinFET underalp and overlap structures. Fig.10 shows
the comparison of unsymmetrical nFinFET for different
channel doping that shows a symmetrical change in on
and off current keeping current ratio nearly equal. With
increase in doping increases both on and off state
current. So the overall effect on curret ratio is nullified.
Fig.11 shows Id versus Vds characteristics of proposed
unsymmetrical FinFET. It shows that drain current
increases with different values of gate voltage and
matches with ideal behaviour.
Fig.7 Id vs Vgs characteristics of nFinFET (Channel
doping 1e18cm-3)
Fig.8 Id vs Vgs characteristics of nFinFET with
different Fin Width (Channel doping 1e18cm-3)
Fig.9 Transfer characteristics comparing unsymmetrical
FinFET with under and overlap FinFET( Channel
doping 1e18cm-3)
4. Fig.10 Id vs Vgs characteristics of unsymmetrical
nFinFET with different channel doping
nFinFET and pFinFET transfer characteristics shown in
Fig12, compared and it has been observed that the drain
current for both are matching together in on/off state
which a desirable requirement of any CMOS
implementation. A CMOS design based on nFinFET
and pFinFET is further simulated as inverter shown in
Fig.13. The transient response for pulse input in
proposed inverter shown in Fig.14 is almost similar to
ideal behaviour but with the slight difference in output
voltage level.
Fig. 11 Id vs Vds of unsymmetrical FinFET
Fig.12 Comparison of transfer characteristics of
nFinFET and pFinFET with Fin Width 9nm
Fig.13 nFinFET and pFinFET implementation in
CMOS inverter
Fig.14 Transient response of proposed inverter using
unsymmetrical FinFET
5. Fig.15 Inverter Transfer characteristic for Vgs variation
(0-1V)
Fig.15 describes the DC transfer characteristics of
proposed inverter showing near to ideal nature but with
small variation in output voltage level from the required
level.
IV. Conclusions and Future scope
The proposed unsymmetrical Fine structure has good
value of Ion/I off ratio 104 and sub threshold slope of
68mV/V. pined and n-Fine design matches their IV
characteristics, therefore can be easily implemented in
comes inverter circuit. The Id versus vs. characteristics
of proposed ninety and pined is correctly matching. The
proposed unsymmetrical Fine can be further utilized to
design SRAM and DRAM cell.
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