This document provides specifications for a silicon PIN photodiode with a daylight filter. It lists key characteristics such as operating temperature range, reverse voltage, total power dissipation, spectral sensitivity range, photocurrent and open-circuit voltage as functions of irradiance, dark current as a function of reverse voltage and temperature, and capacitance as a function of reverse voltage. It also includes typical applications such as IR remote controls and photointerrupters.

1. FICHA TÉCNICA DEL DIODO LED

4. Ficha técnica del diodo zener
tipo
CARACTERISTICAS ELECTRICAS
Rz Iz
(µ)(v)
Rz Iz
mV/CmA
-1 -2 -3
min max min max min max
05W2 1.6 1.8 1.7 1.9 1.8 2.0 25 -1.5

5. Type Marking Pin Configuration Package
BB 804 SFs 1 = A1 2 = A2 3=C1/2 SOT-23
Parameter Symbol Value Unit
Diode reverse voltage VR 18 V
Peak reverse voltage VRM
20
Forward current IF 50 mA
Operating temperature range Top
100 °C
Storage temperature Tstg
-55 ... 150
Silicon Variable Capacitance Diode
3
• For FM tuners
• Monolithic chip with common cathode
for perfect tracking of both diodes
• Uniform "square law" characteristics
• Ideal HiFi tuning device when used in
low-distortion, back-to-back configuration
2
1 VPS05161
3
1 2
EHA07004
Maximum Ratings
FICHA TECNICA DEL DIODO VARICAP

6. Parameter Symbol Values Unit
min. typ. max.
Reverse current
VR = 16 V
IR - - 20 nA
Reverse current
VR = 16 V, TA = 65 °C
IR - - 200
Diode capacitance
VR = 2 V, f = 1 MHz
CT 42 - 47.5 pF
Capacitance ratio
VR = 2 V, VR = 8 V, f = 1 MHz
CT2/CT8
1.65 1.71 - -
Series resistance
VR = 2 V, f = 100 MHz
rs - 0.18 - Ω
Q factor
VR = 2 V, f = 100 MHz
Q - 200 - -
Temperatur coefficient of CT
VR = 2 V, f = 1 MHz
TCc
- 330 - ppm/K
Diode capacitance 1)
VR = 2V, f = 1MHz
Subgroup: 0
1
2
3
4
CT
42
43
44
45
46
-
-
-
-
-
43.5
44.5
45.5
46.5
47.5
pF
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
AC characteristics

7. CT1V
CT
CT2V
CT
Diode capacitance CT = f (VR)
f = 1MHz
Capacitance ratio CTref / CT = f (VR)
per diode, Vref = parameter, f = 1MHz
EHD07051EHD07050
80
pF
70
3
CT refC T
CT
60
2
50
40
30
1
20
10
0 0
10-1
100
101
V 102
VR
0 5 10 15 V
VR
20
Temperature coefficient TCc = f (VR),
per diode, f = 1MHz
10-3
1
K
EHD07052
TCC
10-4
10-5
10 -1
100
101
10 2
V
VR

8. Silizium-PIN-Fotodiode mit Tageslichtsperrfilter
NEU: in SMT
Silicon PIN Photodiode with Daylight Filter
NEW: in SMT
BP 104 F
BP 104 FS
5.4
Cathodemarking 4.9
4.5
Chipposition
4.0
3.7 4.3
0.6 0.6
0.4 0.4
0.5
0.3
0.8
0.6 0... 5˚
5.08mm
spacing
Photosensitivearea
2.20mmx2.20mm
Approx.weight0.1g GEO06075
Chip position 1.1
0.9
6.7
6.2
4.5
4.3 1.6
1.2
Photosensitive area
2.20mmx2.20mm
Cathodelead
GEO06861
1.
6
1.
2
0.
6
0.
4
1.
2
1.
1
0...0.
1
0.
9
0.
7
1.
2
0.
7
0.
3
0.
8
0.
61.
7
1.
5
4.
0
3.
7
0.
2
0.
1
0.
6
0.
4
2.
2
1.
9
3.
5
3.
0
feo0607
5
FICHA TECNICA DE UN FOTO DIODO

9. Typ (*vorher) Type
(*formerly)
Bestellnummer
Ordering Code
BP 104 F
(*BP 104 )
Q62702-P84
BP 104 FS Q62702-P1646
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg – 40 ... + 85 C
Sperrspannung
Reverse voltage
VR 20 V
Verlustleistung, TA = 25 C Ptot 150 mW
BP 104 F
BP 104 FS
Wesentliche Merkmale Features
● Speziell geeignet für Anwendungen
bei 950 nm
kurze Schaltzeit (typ. 20 ns)
DIL-Plastikbauform mit hoher Packungs-
dichte
BP 104 FS: geeignet für Vapor-Phase
Löten und IR-Reflow Löten
● Especially suitable for applications
of 950 nm
Short switching time (typ. 20 ns)
DIL plastic package with high packing
density
BP 104 FS: suitable for vapor-phase and
IR-reflow soldering
●
●
●
●
● ●
Anwendungen
● IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern, Gerätefernsteuerungen
● Lichtschranken für Gleich- und
Wechsellichtbetrieb
Applications
IR remote control of hi-fi and TV sets,
video tape recorders, dimmers, remote
controls of various equipment
Photointerrupters
●
●
Grenzwerte
Maximum Ratings

10. Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV – 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
TCI 0.18 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V
NEP 3.6 10–14 W
Hz
Nachweisgrenze, VR = 10 V
Detection limit
D* 6.1 1012 cm · Hz
W
BP 104 F
BP 104 FS
Kennwerte (TA = 25 C,  = 950 nm)
Characteristics (cont’d)

11. C
60
pF
50
40
30
20
10
0
BP 104 F
BP 104 FS
Relative spectral sensitivity
Srel = f ()
Photocurrent IP = f (Ee), VR = 5 V
Open-circuit voltage VO = f (Ee)
Total power dissipation
Ptot = f (TA)
OHF00368 OHF01056 4
10
OHF00958
103
A
100
Srel %
160
mW
140
mV
PtotP VO
102 103 120
VO
100
60
101 102 80
60P
100 101 40
20
20
10-1
1000 0
nm

700 800 900 1000 1200 100
101
102
W/cm2 104 0 20 40 60 80 ˚C 100
TAEe
Dark current
IR = f (VR), E = 0
Capacitance
C = f (VR), f = 1 MHz, E = 0
Dark current
IR = f (TA), VR = 10 V, E = 0
OHF01778 OHF00082OHFD1781
10 3
R
nA
8000
pA
R
10 2
6000
10 1
4000
100
2000
10-1
0 10-2 10-1
100
101
V 102 0 20 40 60 80 ˚C 100
TA
0 10 20 30 V 40
VRVR
Directional characteristics Srel = f ()
40 30 20 10 0 OHF01402

1.0
50
0.8
60
0.6
70 0.4
0.280
0
90
100
1.0 0.8 0.6 0.4 0 20 40 60 80 100 120