The document discusses the electrical characteristics and testing of uni junction transistors. It describes the original uni junction transistor as a bar of N-type semiconductor material with a P-type diffusion. It also describes the programmable uni junction transistor which consists of four P-N layers with an anode, cathode, and gate. Both are used as trigger devices for thyristors and in relaxation oscillators due to their negative resistance characteristic. The document provides instructions to test a programmable uni junction transistor by measuring resistances between the emitter, base 1, and base 2 in different configurations.