International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.t
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.t
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
Analysis Of 3C-Sic Double Implanted MOSFET With Gaussian Profile Doping In Th...IJRES Journal
The present work aims at the design of 3C-SiC Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET) with Gaussian doping profile in drift region for high breakdown voltages. By varying the device height ‘h’, function constant m and peak concentration 𝑁0, analysis has been done for an optimum profile for high breakdown voltage. With Gaussian profile peak concentration 𝑁0 = 1016 𝑐𝑚−3 at drain end and m as 1.496 ×10−2cm, highest breakdown voltage of 6.84kV has been estimated with device height of 200μm.
This Lecture includes the Resistivity survey, field procedure, application advantage, limitaion, Apparant resistivity, VES (Vertical Electrical Sounding), Resistivity Profiling and IP Survey in brief.
Power System Simulation Laboratory Manual Santhosh Kumar
Date:-(13-07-2016)
Hii friends
I Have Attached Our Power System Simulation Laboratory Manual Here for your Reference
Kindly download the Manual and Start Writing the Observation Note By Mr.G.Shivaraj-AP/EEE
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Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
Analysis Of 3C-Sic Double Implanted MOSFET With Gaussian Profile Doping In Th...IJRES Journal
The present work aims at the design of 3C-SiC Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET) with Gaussian doping profile in drift region for high breakdown voltages. By varying the device height ‘h’, function constant m and peak concentration 𝑁0, analysis has been done for an optimum profile for high breakdown voltage. With Gaussian profile peak concentration 𝑁0 = 1016 𝑐𝑚−3 at drain end and m as 1.496 ×10−2cm, highest breakdown voltage of 6.84kV has been estimated with device height of 200μm.
This Lecture includes the Resistivity survey, field procedure, application advantage, limitaion, Apparant resistivity, VES (Vertical Electrical Sounding), Resistivity Profiling and IP Survey in brief.
Power System Simulation Laboratory Manual Santhosh Kumar
Date:-(13-07-2016)
Hii friends
I Have Attached Our Power System Simulation Laboratory Manual Here for your Reference
Kindly download the Manual and Start Writing the Observation Note By Mr.G.Shivaraj-AP/EEE
Please follow it friends✌
With Happy,
Šαηтн๑zzζzz
Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
CW RADAR, FMCW RADAR, FMCW ALTIMETER, AND THEIR PARAMETERSveerababupersonal22
It consists of cw radar and fmcw radar ,range measurement,if amplifier and fmcw altimeterThe CW radar operates using continuous wave transmission, while the FMCW radar employs frequency-modulated continuous wave technology. Range measurement is a crucial aspect of radar systems, providing information about the distance to a target. The IF amplifier plays a key role in signal processing, amplifying intermediate frequency signals for further analysis. The FMCW altimeter utilizes frequency-modulated continuous wave technology to accurately measure altitude above a reference point.
Using recycled concrete aggregates (RCA) for pavements is crucial to achieving sustainability. Implementing RCA for new pavement can minimize carbon footprint, conserve natural resources, reduce harmful emissions, and lower life cycle costs. Compared to natural aggregate (NA), RCA pavement has fewer comprehensive studies and sustainability assessments.
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
Cosmetic shop management system project report.pdfKamal Acharya
Buying new cosmetic products is difficult. It can even be scary for those who have sensitive skin and are prone to skin trouble. The information needed to alleviate this problem is on the back of each product, but it's thought to interpret those ingredient lists unless you have a background in chemistry.
Instead of buying and hoping for the best, we can use data science to help us predict which products may be good fits for us. It includes various function programs to do the above mentioned tasks.
Data file handling has been effectively used in the program.
The automated cosmetic shop management system should deal with the automation of general workflow and administration process of the shop. The main processes of the system focus on customer's request where the system is able to search the most appropriate products and deliver it to the customers. It should help the employees to quickly identify the list of cosmetic product that have reached the minimum quantity and also keep a track of expired date for each cosmetic product. It should help the employees to find the rack number in which the product is placed.It is also Faster and more efficient way.
Forklift Classes Overview by Intella PartsIntella Parts
Discover the different forklift classes and their specific applications. Learn how to choose the right forklift for your needs to ensure safety, efficiency, and compliance in your operations.
For more technical information, visit our website https://intellaparts.com
AKS UNIVERSITY Satna Final Year Project By OM Hardaha.pdf
EE504.9.ppt
1. EE - 504.9 1
DEPARTMENT OF TECHNICAL EDUCATION
ANDHRA PRADESH
Name : G.Venkateswara Rao
Designation : Lecturer
Branch : Electrical & Electronic Engg.
Institute : G.P.T,Hyderabad
Year/semester : V Semester
Subject : Power systems-II
( Transmission & Distribution)
Subject code : EE-504
Topic : Transmission lines
Sub topic : Expression for the capacitance of single
phase line and Problems.
Duration : 50 min
Teaching Aids : ppt, diagrams.
2. EE - 504.9 2
Recap
• Definition of the capacitance
• Derivation of the expression for the capacitance of
single phase line and problems.
In the previous class, we have learnt about
3. EE - 504.9 3
Objectives
• Capacitance of three phase symmetrical and
asymmetrical and transposed round conductor.
• Use the conductor tables for determining the
resistance, inductance and capacitance of
over head lines at different voltages.
On completion of this period you would be able
to know
4. EE - 504.9 4
Three phase symmetrical spaced conductors:
(Equally spaced).
• A,B,C are three conductors equally spaced
at distance of ‘D’ meters and radius of the
conductors is ‘r’ meters.
Inductance of three phase transmission line
5. EE - 504.9 5
Capacitance/conductor/km
=0.0556/loge(D/r) µF
6. EE - 504.9 6
Three phase unsymmetrical spaced conductors:
(un equal spacing)
• A,B,C are three conductors unequally spaced at
distance of ‘DAB’, ‘DBC’, ‘DCA’, meters and radius of the
conductors is ‘r’ meters.
7. EE - 504.9 7
Geometrical mean distance
D = 3 DAB DBC DCA
Capacitance / conductor / km
= 0.0556 / loge [( 3 DAB DBC DCA )/ r] µ F
8. EE - 504.9 8
1) Calculate the capacitance of the each conductor of a 400
km, three phase line with an equilateral configuration. The
spacing between conductors is 3 m and radius of the
conductor is 1 cm.
Solution :
Given data :
Length of the line L = 400 km
Spacing between conductor, D = 3m = 300 cm
Radius of the conductor, r = 1cm
Problem :
9. EE - 504.9 9
Capacitance / conductor / km = 0.0556 / loge (D/r)
= 0.0556 / lobe (300/1)
= 9.747 x 10-3 µ F / km
Total Capacitance / conductor = 9.747 x 10-3 x 400
= 3.898 µ F
10. EE - 504.9 10
2) Calculate the capacitance / km of a three phase line
completely transposed with a triangle configuration. The
spacing between conductors are 1 m, 1.25m and 2.125 m.
Diameter of the conductor is 1.25 cm.
Solution :
Given data :
DAB = 1m, DBC = 1.25 m, DCA= 2.125m
Geometric mean distance D = 3 DAB DBC DCA
D = 3 1 x 1.25 x 2.125 = 1.385 m =138.5 cm
11. EE - 504.9 11
Diameter of the conductor = 1 cm
Radius of the conductor r = ½ = 0.5 cm
Capacitance / conductor / km
= 0.0556/ loge[( 3 DABDBCDCA ) / r ]
=0.0556/loge(138.5/0.5)
=0.0556/5.624=0.0098µF/km
12. EE - 504.9 12
3) Calculate the capacitance / phase or line to neutral
capacitance of a three phase line completely transposed
with horizontal configuration. The spacing between
conductors are 2 m, 2.5m and 4.5 m. Diameter of the
conductor is 1.25 cm.
Solution :
Given data :
DAB = 2m, DBC = 2.5 m, DCA= 4.5m
13. EE - 504.9 13
Geometric mean distance D = 3 DAB DBC DCA
= 3 2 x 2.5 x 4.5
= 2.82 m = 282 cm
Radius of the conductor, r = 1.25 /2 = 0.625 cm
Line to neutral capacitance or
Capacitance / conductor / km
= 0.0556/ loge[( 3 DABDBCDCA ) / r ]
= 0.0556/loge(282/0.625)
= 0.0556/6.112=0.00909µF/km
14. EE - 504.9 14
Resistance, inductance and capacitance of the three
phase over head line conductors at different voltages.
(Values apply to double circuit lines, A.C.S.R conductors).
1.Rated voltage kv 20 30 60
2.Nominal x section 35 150 35 150 95 240
Al ( mm2)
3.Diameter of the 8.1 17.3 8.1 17.3 13.4 21.7
conductor (mm)
4.Resistance at 200C 0.87 0.2 .87 0.2 0.32 0.13
(ohm/km)
5.Reactance (2 fl) at 0.39 0.34 0.4 0.35 0.4 0.37
50 Hz (ohm/km)
6.Mutual cap. (10-9 F/km) 9.7 11.2 9.5 10.9 9.5 10.3
7.cap.To earth(10-9 F/km) 3.4 3.6 3.5 3.7 3.8 4.0
15. EE - 504.9 15
Resistance, inductance and capacitance of the three
phase over head line conductors at different voltages.
(Values apply to double circuit lines, A.C.S.R conductors).
1.Rated voltage kv 110 220
2.Nominal x section 120 300 340 2x240
Al ( mm2)
3.Diameter of the 15.7 24.2 28.1 2x21.7
conductor (mm)
4.Resistance at 200C 0.25 0.10 0.09 0.062
(ohm/km)
5.Reactance (2 fl) at 0.41 0.38 0.40 0.32
50 Hz (ohm/km)
6.Mutual cap. (10-9 F/km) 9.3 10 9.5 11.5
7.cap.To earth(10-9 F/km) 4.0 4.2 4.8 6.3
16. EE - 504.9 16
Summary
• Capacitance of three phase symmetrical, asymmetrical
and transposed round conductors and Problems.
• Conductor tables for determining the resistance,
inductance and capacitance of over head lines
at different voltages.
We have discussed about
17. EE - 504.9 17
1. capacitance/conductor/km for symmetrical spaced three
phase over head line is given by
a) 0.0556 / loge (r / d )
b) 0.02781/ loge (d / r)
c) 0.0556 / loge (D / r)
d) 0.0556 / loge (r / d)
QUIZ
18. EE - 504.9 18
2. Capacitance/conductor/km for unsymmetrical spaced
and transposed three phase over head line is given by
a) 0.0556 / loge (r / d )
b) 0.0556/ loge( 3 (DABDBCDCA / r))
c) 0.0556 / loge (D / r)
d) 0.0556 / loge (r / d)
QUIZ
19. EE - 504.9 19
Frequently asked questions.
1) Calculate the capacitance of the each conductor of a 250
km, three phase line with an equilateral configuration. The
spacing between conductors is 2.5 m and radius of the
conductor is 1.2 cm.
2) Calculate the capacitance / km of a three phase line
completely transposed with a triangle configuration. The
spacing between conductors are 1.5 m, 1.75m and 2.125
m. Diameter of the conductor is 1.45 cm.
20. EE - 504.9 20
3) Calculate the capacitance / phase or line to neutral
capacitance of a three phase line completely transposed
with horizontal configuration. The spacing between
conductors are 2.2 m, 2.55m and 4.75 m. Diameter of the
conductor is 1.65 cm.