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![Reliability
4. Applications Considered on Reliability
The word reliablity is an abstract term which refers to the degree to
which equipment or components, such as semiconductor devices, are
resistant to failure. Reliability can be and is often measured quantitatively.
Reliability is defined as “whether equipment or components (such as
a semiconductor device) under given conditions perform the same at
the end of a given period as at the beginning.”
2. Reliability Function
Collector Current Ic(A)
Failure Rate (λ)
us
SOA(Safe Operating Area)
Collector-Emitter Voltage Vce(V)
Figure 2 SOA
Initial
Failure
Random or
Chance Failure
Wear-out
Failure
Time (t)
Figure 1 Bath Tub Curve
These three types of failure describe “bathtub curve” shown in
Figure 1. Infant failures can be attributed to trouble in the production
process and can be eliminated by aging befor shipment to customers,
stricter control of the production process and quality control measures.
Semiconductor devices such as transistors, unlike electronic equipment,
take a considerable amount of time to reach the stage where wear-out
failure begins to occur. And, as shown in Figure 1 (b), they also last
much longer than electronic equipment. This shows that the longer they
are used the more stable they actually become.
The reduction that occurs in random failures can be approximated by
Weibull distribution, logarithmic normal distribution, or gamma distribution, but Weibull distribution best expresses the phenomenon that
occurs with transistors.
3. Quantitative Expression of Reliability
While there are many ways to quantitatively express reliability, two
criteria, failure rate and life span, are generally used to define the
reliability of semiconductors such as transistrors.
a) Failure Rate (FR)
Failure rate often refers to instantaneous failures or λ (t). In general
of reliability theory, however, the cumulative failure rate, or Reliability Index, is
r(t)
⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(1)
N⋅t
Where N = Net quantity used, and
r(t) = Net quantitiy failed after t hours
If we assign t the arbitrary
F⋅R=
F ⋅ R = r × 100 (%/1,000 hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(2)
N
In situations where the cumulative failure rate is small, failure is expressed in units of one Fit, 10-9 (failures/hours).
b) Life Span(L)
Life Span can be expressed in terms of average lifespan or as Mean
Time Between Failure (MTBF), but assuming that random failure
is shown by the Index Distribution [λ (t) = constant], then Life Span
or L can be shown by the equation
1
L = ⋅ (hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(3)
F R
6
Loc
Estimation
wn
Semiconductor
Devices
o
akd
Bre
ary wer
Po
bl e
wa
(b)
ond
llo
xA
General Electronic
Equipment or
Components
(a)
S ec
1. Infant failure
2. Random failure
3. Wear-out failure
Ma
In general, there are three types of failure modes in electronic components:
a) The type and specifications of our transistors and semiconductor
devices vary depending on the application that will be required by
their intended use. Customer should, therefore, determine
which type will best suit their purposes.
b) Note that high temperratures or long soldering periods must be avoided during soldering, as heat can be transmitted through external
leads into the interior. This may cause deterioration if the maximum
allowable temperature is exceeded.
c) When using the trasistor
under pulse operation or
Max.Allowable
inductive load, the Safe
Current
Operating Area (SOA) for
the current and voltage must
not be exceeded (Figure 2).
Max.
Allowable
Voltage Vceo(Max)
1. Definition of Reliability
d) The reliability of transistors and semiconductor devices is greatly
affected by the stress of junction temperature. If we accept in general
proceed in the form of Arrhenius equation, the relationship between
the junction temperature Tj and lifespan L can be expressed with
the following empirical formula
n L = A+ B ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(4)
Tj
It is, hence, very important to derate the junction temperature to
assure a high reliability rate.
5. Reliability Test
Sanken bases its test methods and conditions on the following
standards. Tests are conducted under these or stricter conditions,
The details of these are shown in Table 1.
• MIL-STD-202F (Test method for electrical and electronic components)
• MIL-STD-750C (Test method for semiconductor equipment)
• JIS C 7021 (Endurance test and environmental test method for
individual semiconductor devices)
• JIS C 7022 (Endurance test and environmental test method for
integrated circuits of semiconductors)
6. Quality Assurance
To ensure high quality and high reliability, quality control and production process control procedures are executed from the receipt of parts
through the entire production process. Our quality assurance system
is shown in Figure 3.](https://image.slidesharecdn.com/datasheetpowertransistorssanken-131218234353-phpapp01/85/Data-sheet-power-transistors-sanken-8-320.jpg)
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Data sheet power transistors sanken
This document is a bulletin from Sanken Electric Co., Ltd. that provides information on their power transistors. It includes a transistor selection guide with charts showing electrical characteristics of various transistor models. It also provides details on individual transistor part numbers, specifications, and applications. The document cautions users to verify the latest information and obtain consent for intended applications of the transistors.
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Data sheet power transistors sanken
- 1. POWER TRANSISTORS SANKEN ELECTRICCO.,LTD. Bulletin No T01EE0 ( July,2001)
- 2. C AU TI O N / WA R N I N G this publication • The information in no responsibility ishas been carefully checked and is believed to be accurate; however, assumed for inaccuracies. the right to make changes without further notice to any • Sanken reserves improvements in the performance, reliability, orproducts herein in the interest of manufacturability • • • • • • • • of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users responsibility. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested. When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written confirmation of your specifications. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. Anti radioactive ray design is not considered for the products listed herein. This publication shall not be reproduced in whole or in part without prior written approval from Sanken.
- 3. Contents Transistor Selection Guide..2 Reliability.........................6 TemperatureDerating in Safe Operating Area.........9 Accessories.....................9 Switching Characteristics Test Circuit....................10 Symbols and Term...........10 A1186............................11 A1215............................12 A1216............................13 A1262............................14 A1294............................15 A1295............................16 A1303............................17 A1386/A ........................18 A1488/A ........................19 A1492............................20 A1493............................21 A1494............................22 A1567............................23 A1568............................24 A1667/8.........................25 A1673............................26 A1693............................27 A1694............................28 A1695............................29 A1725............................30 A1726............................31 A1746............................32 A1859/A ........................33 A1860............................34 A1907............................35 A1908............................36 A1909............................37 A2042............................38 B1257............................39 B1258............................40 B1259............................41 B1351............................42 B1352............................43 B1382............................44 B1383............................45 B1420............................46 SANKEN POWER TRANSISTORS B1559............................47 B1560............................48 B1570............................49 B1587............................50 B1588............................51 B1647............................52 B1648............................53 B1649............................54 B1659............................55 B1685............................56 B1686............................57 B1687............................58 C2023 ...........................59 C2837 ...........................60 C2921 ...........................61 C2922 ...........................62 C3179 ...........................63 C3263 ...........................64 C3264 ...........................65 C3284 ...........................66 C3519/A ........................67 C3678 ...........................68 C3679 ...........................69 C3680 ...........................70 C3830 ...........................71 C3831 ...........................72 C3832 ...........................73 C3833 ...........................74 C3834 ...........................75 C3835 ...........................76 C3851/A ........................77 C3852/A ........................78 C3856 ...........................79 C3857 ...........................80 C3858 ...........................81 C3890 ...........................82 C3927 ...........................83 C4020 ...........................84 C4024 ...........................85 C4064 ...........................86 C4065 ...........................87 C4073 ...........................88 C4130 ...........................89 C4131 ...........................90 C4138 ...........................91 C4139 ...........................92 C4140 ...........................93 C4153 ...........................94 C4296 ...........................95 C4297 ...........................96 C4298 ...........................97 C4299 ...........................98 C4300 ...........................99 C4301 .........................100 C4304 .........................101 C4381/2 ......................102 C4388 .........................103 C4418 .........................104 C4434 .........................105 C4445 .........................106 C4466 .........................107 C5333 .........................135 C5370 .........................136 D1769 .........................137 D1785 .........................138 D1796 .........................139 D2014 .........................140 D2015 .........................141 D2016 .........................142 D2017 .........................143 D2045 .........................144 D2081 .........................145 D2082 .........................146 D2083 .........................147 D2141 .........................148 D2389 .........................149 D2390 .........................150 D2401 .........................151 C4467 .........................108 C4468 .........................109 C4495 .........................110 C4511 .........................111 C4512 .........................112 C4517/A......................113 C4518/A......................114 C4546 .........................115 C4557 .........................116 C4662 .........................117 C4706 .........................118 C4883/A......................119 C4886 .........................120 C4907 .........................121 C4908 .........................122 C5002 .........................123 C5003 .........................124 C5071 .........................125 C5099 .........................126 C5100 .........................127 C5101 .........................128 C5124 .........................129 C5130 .........................130 C5239 .........................131 C5249 .........................132 C5271 .........................133 C5287 .........................134 D2438 .........................152 D2439 .........................153 D2557 .........................154 D2558 .........................155 D2560 .........................156 D2561 .........................157 D2562 .........................158 D2589 .........................159 D2641 .........................160 D2642 .........................161 D2643 .........................162 SAH02 ........................163 SAH03 ........................164 SAP09N ......................165 SAP09P ......................166 SAP10N ......................167 SAP10P ......................168 SAP16N ......................169 SAP16P ......................170 SAP Series Application Information................171 Discontinued Parts Guide ........................176 1
- 4. Transistor Selection Guide sVCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 600 550 C3679 C4300 C4706 C3927 C4557 C3830 C4907 400 C4073 C4418 C4662 C5130 C3831 C3832 C3890 C4130 C4546 C4138 C4296 C3833 C4297 C5071 D2017 A1668 C4382 180 D2016 A1294 C3263 A1493 C3857 A1859A C4883A C5271 D2557 D2558 160 150 C4140 D2141 200 A1667 A1859 C4381 C4883 B1559 B1587 D2389 D2438 140 120 D2015 D1769 D1785 D2045 110 100 80 C3852A C3852 A1694 A1908 C4467 C5100 A1262 A1488 B1257 C3179 C3851 D1796 50 C3834 C3835 C4153 A1186 B1560 B1588 C2837 D2390 D2439 A1695 A1909 C4468 C5101 B1259 D2081 C4495 3 A2042 C4024 4 A1303 A1860 C3284 C4886 A1386A A1492 A1673 C3519A C3856 C4388 A1215 A1386 C2921 C3519 B1647 B1649 D2560 D2562 A1216 C2922 B1648 D2561 B1382 B1420 D2082 B1383 D2083 A1568 B1351 B1352 C4065 40 2 B1570 D2401 A1295 C3264 A1494 C3858 B1659 B1685 B1686 B1687 D2489 D2641 D2642 D2643 B1258 A1693 A1725 A1726 A1907 C4466 C4511 C4512 C5099 A1488A C3851A D2014 60 5 6 7 8 10 A1567 A1746 C4064 C5370 12 Collector Current IC(A) 2 C4139 C4298 C4434 C2023 C5333 250 230 Collector–Emitter Voltage VCEO(V) C5124 C4518 C4518A C5287 500 380 300 C3680 C4301 C5002 C5003 C4131 14 15 16 17 18 25
- 5. Transistor Selection Guide sTransistors for Switch Mode Power Supplies (for AC80 – 130V input) VCBO(V) VCEO(V) IC (A) 250 200 MT-25 (TO220) 5 7 500 400 C3832 12 15 400 600 500 600 C3830 FM100 (TO3PF) C4296 C4297 C5271 C4073 C4418 C4662 C3890 C4130 10 18 5 7 6 10 3 MT–100 (TO3P) C4138 C3833 C5071 C4139 C4434 C4140 5 FM20 (TO220F) C4298 C5130 C4546 C4907 C3831 C5249 s Transistors for Switch Mode Power Supplies (for AC180 – 280V input) VCBO(V) IC (A) 550 3 5 600 900 (1000) VCEO(V) MT-25 (TO220) FM20 (TO220F) C5239 C4517(A) C4518(A) 10 14 C4020 800 FM100 (TO3PF) C5287 C3927 C4706 C4557 C4908 C3678 3 900 MT–100 (TO3P) C4304 5 7 C3679 C3680 C4299 C4445 C4300 C4301 3
- 6. Transistor Selection Guide Transistorsfor Audio Amplifiers s Single Transistors q Single Emitter Part No. PC(W) 2SA1725/2SC4511 30 2SA1726/2SC4512 50 VCEO(V) MT-25 (TO220) 6 MT-100 (TO3P) 75 2SA1694/2SC4467 Package 60 2SA1908/2SC5100 fT(MHz) 60 2SA1907/2SC5099 hFE(min) FM20 (TO220F) 80 2SA1693/2SC4466 IC (A) 80 FM100 (TO3PF) 120 8 MT-100 (TO3P) 50 2SA1909/2SC5101 80 140 10 2SA1673/2SC4388 85 180 15 2SA1695/2SC4468 100 140 10 2SA1492/2SC3856 130 180 15 2SA1493/2SC3857 150 20 FM100 (TO3PF) MT-100 (TO3P) 15 200 2SA1494/2SC3858 q LAPT MT-200 (2-screw mount) 17 200 (Multi emitter for High Frequency) Part No. PC(W) VCEO(V) IC (A) hFE(min) 2SA1860/2SC4886 80 2SA1186/2SC2837 100 2SA1303/2SC3284 125 2SA1386/2SC3519 130 160 2SA1386A/2SC3519A 130 180 2SA1294/2SC3263 130 230 35 2SA1215/2SC2921 150 160 50 2SA1216/2SC2922 200 180 14 10 50 q Transistors FM100 (TO3PF) MT-100 (TO3P) 50 40 40 17 200 Package 60 14 150 50 15 2SA1295/2SC3264 fT(MHz) MT-200 (2-screw mount) 35 230 with built in temperature compensation diodes for audio amplifier Part No. VCEO(V) IC (A) hFE(min) Emitter Resistor(Ω) SAP09P/SAP09N 80 150 10 5000 0.22 SAP10P/SAP10N 100 150 12 5000 0.22 SAP16P/SAP16N 4 PC(W) 150 160 15 5000 0.22
- 7. Transistor Selection Guide sDarlington Transistors Part No. PC(W) 2SB1686 VCEO(V) IC (A) hFE(min) fT(MHz) 100 30 2SD2642 2SB1659 100 110 2SB1685 2SB1687 6 100 2SB1587 100 60 75 2SD2438 2SB1559 80 65 150 10 50 80 2SD2439 55 15 2SB1649 85 2SD2562 2SB1560 70 50 10 55 150 2SB1647 2SD2401 15 150 2SB1570 12 70 50 55 150 2SB1648 MT-200 (2-screw mount) 45 200 2SD2561 MT-100 (TO3P) 45 130 2SD2560 FM100 (TO3PF) 45 200 100 2SD2390 MT-100 (TO3P) 80 5000 2SB1588 FM100 (TO3PF) 65 8 80 2SD2389 MT-100 (TO3P) 60 60 2SD2643 MT-25 (TO220) 60 60 2SD2641 FM20 (TO220F) 60 50 2SD2589 Package 17 70 s Temperature compensation Transistors and Driver Transistors Part No. 2SC4495 PC(W) 25 2SC4883 VCEO(V) fT(MHz) 3 500 40 60 120 Package Driver, Complement 2SA1859 180 2SC4883A 2SA1859 –2 –180 FM20 (TO220F) Driver, Complement 2SA1859A Driver, Complement 2SC4883 –150 20 Remarks Temperature compensation 150 20 2SA1859A hFE(min) 2 50 IC (A) 60 60 Driver, Complement 2SC4883A 5
- 8. Reliability 4. Applications Consideredon Reliability The word reliablity is an abstract term which refers to the degree to which equipment or components, such as semiconductor devices, are resistant to failure. Reliability can be and is often measured quantitatively. Reliability is defined as “whether equipment or components (such as a semiconductor device) under given conditions perform the same at the end of a given period as at the beginning.” 2. Reliability Function Collector Current Ic(A) Failure Rate (λ) us SOA(Safe Operating Area) Collector-Emitter Voltage Vce(V) Figure 2 SOA Initial Failure Random or Chance Failure Wear-out Failure Time (t) Figure 1 Bath Tub Curve These three types of failure describe “bathtub curve” shown in Figure 1. Infant failures can be attributed to trouble in the production process and can be eliminated by aging befor shipment to customers, stricter control of the production process and quality control measures. Semiconductor devices such as transistors, unlike electronic equipment, take a considerable amount of time to reach the stage where wear-out failure begins to occur. And, as shown in Figure 1 (b), they also last much longer than electronic equipment. This shows that the longer they are used the more stable they actually become. The reduction that occurs in random failures can be approximated by Weibull distribution, logarithmic normal distribution, or gamma distribution, but Weibull distribution best expresses the phenomenon that occurs with transistors. 3. Quantitative Expression of Reliability While there are many ways to quantitatively express reliability, two criteria, failure rate and life span, are generally used to define the reliability of semiconductors such as transistrors. a) Failure Rate (FR) Failure rate often refers to instantaneous failures or λ (t). In general of reliability theory, however, the cumulative failure rate, or Reliability Index, is r(t) ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(1) N⋅t Where N = Net quantity used, and r(t) = Net quantitiy failed after t hours If we assign t the arbitrary F⋅R= F ⋅ R = r × 100 (%/1,000 hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(2) N In situations where the cumulative failure rate is small, failure is expressed in units of one Fit, 10-9 (failures/hours). b) Life Span(L) Life Span can be expressed in terms of average lifespan or as Mean Time Between Failure (MTBF), but assuming that random failure is shown by the Index Distribution [λ (t) = constant], then Life Span or L can be shown by the equation 1 L = ⋅ (hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(3) F R 6 Loc Estimation wn Semiconductor Devices o akd Bre ary wer Po bl e wa (b) ond llo xA General Electronic Equipment or Components (a) S ec 1. Infant failure 2. Random failure 3. Wear-out failure Ma In general, there are three types of failure modes in electronic components: a) The type and specifications of our transistors and semiconductor devices vary depending on the application that will be required by their intended use. Customer should, therefore, determine which type will best suit their purposes. b) Note that high temperratures or long soldering periods must be avoided during soldering, as heat can be transmitted through external leads into the interior. This may cause deterioration if the maximum allowable temperature is exceeded. c) When using the trasistor under pulse operation or Max.Allowable inductive load, the Safe Current Operating Area (SOA) for the current and voltage must not be exceeded (Figure 2). Max. Allowable Voltage Vceo(Max) 1. Definition of Reliability d) The reliability of transistors and semiconductor devices is greatly affected by the stress of junction temperature. If we accept in general proceed in the form of Arrhenius equation, the relationship between the junction temperature Tj and lifespan L can be expressed with the following empirical formula n L = A+ B ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(4) Tj It is, hence, very important to derate the junction temperature to assure a high reliability rate. 5. Reliability Test Sanken bases its test methods and conditions on the following standards. Tests are conducted under these or stricter conditions, The details of these are shown in Table 1. • MIL-STD-202F (Test method for electrical and electronic components) • MIL-STD-750C (Test method for semiconductor equipment) • JIS C 7021 (Endurance test and environmental test method for individual semiconductor devices) • JIS C 7022 (Endurance test and environmental test method for integrated circuits of semiconductors) 6. Quality Assurance To ensure high quality and high reliability, quality control and production process control procedures are executed from the receipt of parts through the entire production process. Our quality assurance system is shown in Figure 3.
- 9. Reliability Table 1: TestMethods and Conditions Details of the Testing Method LTPD(%) Continuous Operations Test Collector dissipation with maximum junction temperature is applied continuously at room temperature to judge lifespan and reliability under transistor operating conditions. *5/1000hrs Intermittent Operation Test Power equal to that used in the Continuous Operations Test is applied intermittently to test the transistor’s lifespan and reliability under on and off conditions. 5/1000hrs Test High Temperature Storage Test Low Temperature Storage Test Confirms the highest storage temperature and operating temperature of transistors. Confirms the lowest storage temperature of transistors. 5/1000hrs 5/1000hrs Moisture Resistance Test Tested at RH=85% and TA=85°C for the effects of the interaction between temperature and humidity, and the effects of surface insulation between electrodes and high temperature/high humidity. 5/1000hrs Heat Cycle Test Tested at Tstg min – Room temp. – Tstg max – Room temp. for 10 cycles (one cycle 30 min. –5 min. –30 min. –5 min.) to detect mechanical faults and characteristic changes caused by thermal expansion and shrinkage of the transistor. 5 Heat Shock Test Tested at 100°C (5 min.), 25°C (within 3 sec.), 0°C (5 min.) for 10 cycles to check for mechanical faults and characteristic changes caused by thermal expansion and shrinkage of transistor. 5 Soldering Heat Test Tested at 260 ± 5°C, 10 ± 1 sec, by dipping lead wire to 1.5mm from the seating plane in solder bath to check for characteristic changes caused by drastic temperature rises of exterior lead wire. 5 Vibrations Test Tested at amplitude 1.52mm, vibration frequency 10-55 Hz in directions of X, Y, Z, for 2 hours each (total 6 hours) to check for characteristic changes caused by vibration during operation and transportion. 5 Drop Test Tested by dropping 10 times from 75 cm height to check for mechanical endurance and characteristic changes caused by shock during handling. 5 ∗ Reliability Standard : 60% Figure 3 Quality Assurance System Material Purchasing Incoming Inspection Physical and Chemical Inspection Production Process Quality Control Production Process Control Specialized Tests for all units Marking Packing Shipping Inspection Shipment Periodical Quality Assurance Test 1. Operational Life (continuous) Test 2. Operational Life (intermittent) Test 3. High Temperature Storage Test 4. Low Temperature Storage Test 5. Moisture Resistance Test 6. Heat Cycle Test 7. Heat Shock Test 8. Soldering Heat Test 9. Vibaration Test 10. Drop Test 7
- 10. Reliability 7. Notes RegardingStorage, Characteristic Tests, and Handling Since reliability can be affected adversely by improper storage environment and handling methods during Characteristic tests, please observe the following cautions. a) Cautions for Storage 1. Ensure that storage conditions comply with the standard temperature (5 to 35°C) and the standard relative humidity (arround 40 to 75%) and avoid storage locations that experience extreme changes in temperature or humidity. 2. Avod locations where dust or harmful gases are present, and avoid direct sunlight. 3. Reinspect for rust in leads and solderbility that have been stored for a long time. b) Cautions for Characteristic Tests and Handling 1. When characteristic tests are carried out during inspection testing and other standard test periods, protect the transistor from surges of power from the testing device, shorts between the transistor and the heatsink c) Silicone Grease When using a heatsink, please coat the back surface of the transistor and both surfaces of the insulating plate with a thin layer of silicone grease to improve heat transfer between the transistor and the heatsink. Recommended Silicone Grease • G-746 (Shin-Etsu Chemical) • YG6260 (GE Toshiba Silicone) • SC102 (Dow Corning Toray Silicone) d) Torque when Tightening Screws Thermal resistance increases when tightening torque is small, and radiation effects are decreased. When the torque is too high, the screw can cut, the heatsink can be deformed, and/or distortion can arise in the product’s frame. To avoid these problems, Table 2 shows the recommended tightening torques for each product type. Table 2. Screw Tightening Torques Package Screw Tightening Torque MT25 (TO-220) 0.490 to 0.686 N · m (5 to 7kgf · cm) FM20 (TO-220 Full Mold) 0.490 to 0.686 N · m (5 to 7kgf · cm) MT100 (TO-3P) 0.686 to 0.822 N · m (7 to 9kgf · cm) FM100 (TO-3P Full Mold) 0.686 to 0.822 N · m (7 to 9kgf · cm) MT200 ( two-point mount) 0.686 to 0.822 N · m (7 to 9kgf · cm) 2GR ( one-point mount) 0.686 to 0.822 N · m (7 to 9kgf · cm) e) Soldering Temperature In general, the transistor is subjected to high temperatures when it is mounted on the printed circuit board, whether from flow solder from a solderbath, or, in hand operations from a soldering iron. The testing method and test conditions (JIS-C-7021 standards) for a transistor’s heat resistance during soldering are: At a distance of 1.5mm from the transistor’s main body, apply 260°C for 10 seconds, and 350°C for 3 seconds. However, please stay well within these limits and for as short a time as possible during actual soldering. 8
- 11. Reliability s Temperature Deratingin Safe Operating Area Flange (case) temperature is typically described as 25°C, but it must be derated subject to the operating temperature. This derating curve is determined by manufacturing conditions of devices, materials used etc. and in case of a silicon transistor, breakdown voltage and DC Current Gain are significantly deteriorated in the temperature range of 260°C to 360°C. Hence, the collector current must be derated by using the derating curve in Fig.2 where the breakdown point is set at 260°C. Pc 100 lim re a B S/ B 50 lim itin g ar ea rea rea ga ga itin lim Tc=25°C S/ itin lim Pc Collector Current Ic (A) ga Collector Current Derating coefficient DF (%) itin 0 0 50 Collector-Emitter Voltage VCE (V) 100 150 200 250 300 Case Temp Tc (°C) Fig.1 Safe Operating Area Fig.2 Derating Curve of Safe Operating Area Derating coefficient is obtained from temperature in Fig.2 and it must be applied to the current value of the safe operating area in order to obtain the derated current. s Accessories 6 Sanken Transistors do not include accessories. Accessories may be attached at a cost if requested. 6 Sanken transistor case is a standard size, and can be used with any generally sold accessories. • Insulater: Mica, with a thickness of 0.06mm, +0.045 –0.005 allowance Type Name:Mold(14)Mica Type Name:Mold(9)Mica 3.1 20.0 ±0.1 12.0±0.1 ±0.1 10.0 +0.2 –0 7.0 14.0±0.1 2.5±0.2 5.0±0.1 19.4±0.1 6.0±0.2 3.7±0.1 2–ø3.2 +0.1 –0 ø3.2 +0.1 –0 ø3.75 +0.1 –0 24.0±0.1 Type Name:Mold(10)Mica • Insulation Bush for MT-25 (TO220) R0.5 7.0 ±0.1 24.0 1.5±0.2 24.38±0.1 +0.2 –0 R0.5 39.0±0.1 R0.5 9
- 12. Switching Characteristics s TypicalSwitching Characteristics (Common Emitter) VCC RL IC VB2 VBB1 (V) (Ω) (A) (V) VBB2 (V) IB1 (V) (A) tr (µs) IB2 (A) tstg (µs) tf (µs) sSwitching Characteristics Test Circuit/Measurement Wave Forms 20µs IC –VCC R2 Base Current 0 0 IB1 0 IB2 +VBB2 PNP IB2 IB1 0 IC 0 Collector Current 0.1IC D.U.T 50µs 0.9IC R1 ton –VBB1 tstg tf RL 0 GND 50µs Base Current 0 VCC R1 0 IB1 IC 0 IB2 +VBB1 NPN IB1 Collector 0.9IC Current 0.1IC 0 IC D.U.T IB2 R2 0 20µs –VBB2 GND ton tstg tf RL 0 Symbols Symbol Item Definition VCBO Collector-Base Voltage DC Voltage between Collector and Base when Emitter is open VCEO Collector-Emitter Voltage Voltage between Collector and Emitter when Base is open and voltage is reversely applied to Collector junction VEBO Emitter-Base Voltage DC voltage between Emitter and Base when Collector is open IC Collector Current DC current passing through Collector electrode IB Base Current DC current passing through Base electrode PC Collector Power Dissipation Power consumed at Collector junction Tj Operating Junction Temperature Maximum allowable temperature value at absolute maximum ratings Tstg Storage Temperature Maximum allowable range of ambient temperature at non-operation ICBO Collector Cutoff Current Collector current when Emitter is open and a specified reverse voltage is applied between Collector and Base IEBO Emitter Cutoff Current Emitter current when Collector is open and a specified reverse voltage is applied between Emitter and Base V(BR)CEO Collector-Emitter Saturation Voltage Breakdown voltage between Collector and Emitter when Base is open hFE DC Current Gain Ratio of DC output current and DC input current at a specified voltage and current (Emitter common) VCE(sat) Collector-Emitter Saturation Voltage DC voltage between Collector and Emitter under specified saturation conditions VBE(sat) Base-Emitter Saturation Voltage DC voltage between Base and Emitter under specified saturation conditions VFEC Emitter-Collector Diode Forward Voltage Diode forward voltage between Emitter and Collector when Base is open fT Cut-off Frequency Frequency at the specified voltage and current where hFE is 1 (0dB) Cob Collector Junction capacitance Junction capacitance between collector and Base at a specified voltage and frequency • Ta=25°C unless otherwise specified. 10
- 13. 2SA1186 LAPT Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC2837) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Unit V ICBO VCB=–150V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –150min V VCBO –150 VCEO –150 –5 V V(BR)CEO IC –10 A hFE VCE=–4V, IC=–3A IB –2 A VCE(sat) IC=–5A, IB=–0.5A PC 100(Ta=25°C) W fT Tj 150 °C COB –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg 50min∗ ø3.2±0.1 MHz pF 2 4.0max 60typ 110typ 20.0min VCE=–12V, IE=1A VCB=–80V, f=1MHz 3 1.05 +0.2 -0.1 5.45±0.1 IC (A) VB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 12 –5 5 –500 500 0.25typ 0.8typ C Weight : Approx 6.0g a. Part No. b. Lot No. 0.2typ V CE ( sat ) – I B Characteristics (Typical) 0 –1 0 –2 –3 0 –4 0 –0.5 –1.0 –1.5 (V C E =–4V) 200 Transient Thermal Resistance DC C urrent G ain h FE 125˚C 25˚C 100 Typ 50 –5 –1 –10 –30˚C 50 30 –0.02 –0.1 –0.5 f T – I E Characteristics (Typical) p) ) emp eT Cas ˚C ( –2 –1 –5 –10 3 1 0.5 0.2 1 10 Collector Current I C (A) Collector Current I C (A) p) –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 –0.02 Tem –2 –5A Collector-Emitter Voltage V C E (V) 100 –4 Tem –1 –30 I B =–20m A –2 I C =–10A se –40mA se –4 –6 C( –60mA –2 25˚ –8 0m A –6 –8 (Ca mA –120 100mA – ˚C –1 125 A Collector Current I C (A) m (V C E =–4V) –10 θ j - a ( ˚ C/W) –8 00 Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 00 –4 –2 A 60m I C – V BE Temperature Characteristics (Typical) –3 Ca I C – V CE Characteristics (Typical) 1.4 E tf (µs) –60 0.65 +0.2 -0.1 5.45±0.1 B RL (Ω) –10 2.0±0.1 V VCC (V) Collector Current I C (A) a 4.8±0.2 b –2.0max sTypical Switching Characteristics (Common Emitter) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) si nk M aximum Power Dissip ation P C (W) 50 at Collector-Emitter Voltage V C E (V) –200 he –100 ite –10 fin –0.2 –2 In Emitter Current I E (A) 10 Without Heatsink Natural Cooling ith –0.5 1 C –1 20 0.1 D W 40 –5 ms T yp 10 Cu t-of f Fr eque ncy f T ( MH Z ) –10 60 0 0.02 100 –30 80 Collecto r Cur rent I C (A) DC Curr ent Gain h FE 4.0 VEBO 15.6±0.4 9.6 1.8 Ratings 5.0±0.2 Conditions Unit 2.0 Symbol Ratings 19.9±0.3 Symbol Application : Audio and General Purpose 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 11
- 14. 2SA1215 LAPT Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC2921) sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit –160 V VCBO Application : Audio and General Purpose External Dimensions MT-200 (Ta=25°C) Conditions ICBO Ratings Unit VCB=–160V Symbol –100max µA 36.4±0.3 24.4±0.2 VEB=–5V –100max µA IC=–25mA –160min V VCEO –160 V IEBO VEBO –5 V V(BR)CEO IC –15 A hFE VCE=–4V, IC=–5A 50min∗ IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V PC 150(Tc=25°C) W fT VCE=–12V, IE=2A 50typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 2-ø3.2±0.1 7 21.4±0.3 a b 2 3 5.45±0.1 VCC (V) RL (Ω) IC (A) VB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) –60 12 –5 5 –500 500 0.25typ 0.85typ B C E Weight : Approx 18.4g a. Part No. b. Lot No. 0.2typ V CE ( sat ) – I B Characteristics (Typical) –1 0 –2 –3 0 –4 0 Collector-Emitter Voltage V C E (V) –0.2 –0.4 –0.6 –0.8 (V C E =–4V) 200 Typ 50 25˚C 100 –30˚C 50 30 –0.02 –5 –10 –15 –1 Transient Thermal Resistance DC Curr ent Gain h FE 125˚C –0.5 Collector Current I C (A) –0.1 –0.5 ) p) mp) e Te Cas ˚C ( –2 –1 –5 –10 –15 em 2 1 0.5 0.1 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) emp eT se T Cas –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 –0.1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 10 –0.02 0 –1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 100 –5 –5A θ j- a ( ˚C/W) 0 I C =–10A –30 I B =–20mA –1 (Ca –50mA –4 –10 ˚C ( –10 0mA –8 –2 25˚C mA –1 50 m A 125 –200 –12 (V C E =–4V) –15 Collector Current I C (A) A A A m A 0m 0m 0m 0m 50 –60 –50 –40 –30 –7 A I C – V BE Temperature Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) –16 3.0 +0.3 -0.1 5.45±0.1 tf (µs) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) Collector Current I C (A) 9 4.0max 20.0min Tstg 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 160 10 m C –5 si nk Without Heatsink Natural Cooling at –0.5 80 he –1 120 ite 20 D fin 40 –10 In Collector Curr ent I C (A) p ith Ty s 60 W Ma xim um Powe r Dissipat io n P C (W) –40 80 Cut- off F req uency f T ( MH Z ) DC Curr ent Gain h FE 6.0±0.2 2.1 40 Without Heatsink 0 0.02 0.1 1 Emitter Current I E (A) 12 10 –0.2 –2 –10 –100 Collector-Emitter Voltage V C E (V) –200 5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 15. 2SA1216 LAPT Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC2922) sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol Unit –180 V External Dimensions MT-200 (Ta=25°C) SymboI Conditions Ratings Unit VCBO Ratings VCBO Application : Audio and General Purpose VCB=–180V –100max µA VEB=–5V –100max –180min 24.4±0.2 µA IC=–25mA 2.1 V VCEO –180 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE VCE=–4V, IC=–8A 30min∗ IB –5 A VCE(sat) IC=–8A, IB=–0.8A –2.0max V PC 200(Tc=25°C) W fT VCE=–12V, IE=2A 40typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) 2-ø3.2±0.1 7 21.4±0.3 a b 2 3 5.45±0.1 RL (Ω) IC (A) VB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 4 –10 5 –1 1 0.3typ 0.7typ C E Weight : Approx 18.4g a. Part No. b. Lot No. tf (µs) –40 0.2typ I C – V CE Characteristics (Typical) I B =–20mA 0 0 –1 –2 –3 –4 0 –0.8 0 –1.0 0 50 –5 125˚C 100 25˚C –30˚C 50 10 –0.02 –10 –17 –0.1 f T – I E Characteristics (Typical) ) –2 –2.4 θ j-a – t Characteristics –0.5 –1 –5 –10 –17 2 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) e T emp –1 Base-Emittor Voltage V B E (V) 200 DC Cur rent Gain h F E Typ –1 –0.6 (V C E =–4V) 300 –0.5 –0.4 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) –0.1 –0.2 Base Current I B (A) h FE – I C Characteristics (Typical) 10 –0.02 e T em p) Tem p) –5A 0 Collector-Emitter Voltage V C E (V) 100 –5 I C =–10A Cas –1 ˚C( –50mA –30 –5 –10 Cas –100mA –2 ase –150mA ˚C( –2 00 mA –10 –15 C(C A (V C E =–4V) –17 25˚ –3 00 m –3 125 mA Collector Current I C (A) 0 –40 θ j - a (˚ C/W) A I C – V BE Temperature Characteristics (Typical) Transient Thermal Resistance –7 m 00 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –15 –5 –1. 5A –1 A 00 m A –17 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) Collector Current I C (A) 9 4.0max 20.0min Tstg 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 200 10 m Emitter Current I E (A) 10 –0.2 –2 –10 –100 Collector-Emitter Voltage V C E (V) –300 nk 1 si 0.1 at 0 0.02 Without Heatsink Natural Cooling he –0.5 120 ite –1 fin –5 160 In 20 DC –10 ith Collect or Cur ren t I C (A) s T 40 yp W M aximum Power Dissipa ti on P C (W) –50 60 Cu t-off Fre quen cy f T (MH Z ) DC Curr ent Gain h F E 6.0±0.2 36.4±0.3 80 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 13
- 16. 2SA1262 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC3179) sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose sElectrical Characteristics External Dimensions MT-25(TO220) (Ta=25°C) Symbol Conditions Ratings Unit V ICBO VCB=–60V –100max µA V IEBO VEB=–6V –100max µA –6 V V(BR)CEO IC=–25mA –60min V –4 A hFE VCE=–4V, IC=–1A 40min –60 VCEO –60 VEBO IC 10.2±0.2 A VCE(sat) IC=–2A, IB=–0.2A –0.6max V 30(Tc=25°C) W fT VCE=–12V, IE=0.2A 15typ 150 °C COB VCB=–10V, f=1MHz 90typ pF –55 to +150 °C Tstg 2.5 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 1.4 10 –2 –10 5 –200 200 0.25typ 0.75typ Weight : Approx 2.6g a. Part No. b. Lot No. tf (µs) –20 0.25typ I B =–5mA 0 0 –1 –2 –3 –4 –5 –6 –0.5 –0.1 –0.5 0 –1 (V C E =–4V) 200 Typ 100 50 –1 25˚C 100 –30˚C 50 20 –0.02 –4 Transient Thermal Resistance D C Cur r ent Gai n h F E 125˚C –0.1 f T – I E Characteristics (Typical) –1 –4 1 1 10 30 he at si nk 10 ite Without Heatsink Natural Cooling fin –0.5 20 In –1 ith s C W s 0m Collector Cur rent I C (A) s m 10 D M aximum Po wer Dissipat io n P C (W) 1m 10 –5 20 1000 P c – T a Derating –10 30 100 Time t(ms) Safe Operating Area (Single Pulse) Typ –1.5 5 0.7 (V C E =–12V) 50 –1.0 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) 40 –0.5 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 500 60 0 Base Current I B (A) (V C E =–4V) –0.5 ) –1A 0 –0.1 h FE – I C Characteristics (Typical) –0.1 emp –2A Collector-Emitter Voltage V C E (V) 20 –0.01 eT –1 I C =–3A mp) (Cas e Tem p) –0.5 –2 –30˚C –10mA –1 –3 e Te –20mA –2 –1.0 Cas –30mA (Cas –40m A –3 ˚C ( –50m A (V C E =–4V) –4 25˚C A 125 –60m θ j- a ( ˚ C/W) A –1.5 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) –8 0m I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) –4 Collector Current I C (A) 2.5 B C E VCC (V) Cut- off F req uency f T (M H Z ) 1.35 0.65 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) DC Curr ent Gain h F E b MHz Tj 2.0±0.1 ø3.75±0.2 a 4.0max –1 PC 12.0min IB 4.8±0.2 3.0±0.2 VCBO 16.0±0.7 Unit 8.8±0.2 Ratings Symbol 10 Without Heatsink 0 0.005 0.01 0.05 0.1 0.5 Emitter C urrent I E (A) 14 1 3 –0.1 –2 2 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 17. 2SA1294 LAPT Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC3263) sAbsolute maximum ratings (Ta=25°C) Ratings VCBO –230 VCEO –230 sElectrical Characteristics Unit External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit V ICBO VCB=–230V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –230min V V V(BR)CEO –15 A hFE VCE=–4V, IC=–5A 50min∗ IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max PC 130(Tc=25°C) W fT VCE=–12V, IE=2A 35typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 4.8±0.2 2.0±0.1 V Tstg a ø3.2±0.1 2 4.0max 20.0min b 3 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 12 –5 –10 5 –500 500 0.35typ 1.50typ C Weight : Approx 6.0g a. Part No. b. Lot No. 0.30typ I B =–20mA 0 0 –1 –2 –3 –1 –5A 0 –4 0 Collector-Emitter Voltage V C E (V) –0.5 –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 200 Typ 50 –0.5 –1 25˚C 100 –30˚C 50 10 –0.02 –5 –10 –15 Transient Thermal Resistance DC C urrent G ain h FE 125˚C –0.1 Collector Current I C (A) –0.1 –0.5 –1 –5 –10 –15 0.5 0.1 10 s he at si nk Without Heatsink Natural Cooling ite –0.5 fin –1 100 In Collector Curr ent I C (A) DC ith Ma ximum Po we r Dissipa ti on P C (W) m –5 50 –0.1 0.1 1 Emitter Current I E (A) 10 –0.05 –3 1000 2000 P c – T a Derating –10 0 0.02 100 Time t(ms) W Cut-o ff F requ ency f T (MH Z ) 1 130 10 20 mp) 1 –40 p –2.5 3 Safe Operating Area (Single Pulse) 60 –2 θ j-a – t Characteristics (V C E =–12V) Ty –1 Collector Current I C (A) f T – I E Characteristics (Typical) 40 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 10 –0.02 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 100 –5 I C =–10A eTe –50mA Cas –5 –10 mp ) emp ) –1 00 mA –2 seT A mA 200 (Ca – 0m ˚C ( –30 –10 –30 mA (V C E =–4V) eTe 00 –15 Cas –5 – 3 ˚C ( A 25˚C .0 –1 125 5A Collector Current I C (A) . –1 I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/W) –3 .0A –2 .0 A –15 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) I C – V CE Characteristics (Typical) 1.4 E tf (µs) –60 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Collector Current I C (A) 4.0 –5 IC 19.9±0.3 VEBO DC C urrent G ain h FE 15.6±0.4 9.6 1.8 Conditions 5.0±0.2 Symbol 2.0 Symbol Application : Audio and General Purpose Without Heatsink –10 –100 Collector-Emitter Voltage V C E (V) –300 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 15
- 18. 2SA1295 LAPT Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC3264) sAbsolute maximum ratings Symbol sElectrical Characteristics (Ta=25°C) External Dimensions MT-200 (Ta=25°C) Unit –230 Symbol V Conditions Ratings Unit ICBO Ratings VCBO Application : Audio and General VCB=–230V –100max µA 36.4±0.3 24.4±0.2 VEB=–5V –100max µA IC=–25mA –230min V VCEO –230 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE VCE=–4V, IC=–5A 50min∗ IB –5 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V PC 200(Tc=25°C) W fT VCE=–12V, IE=2A 35typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 2-ø3.2±0.1 21.4±0.3 7 9 a b 2 4.0max 20.0min Tstg 3 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 12 –5 –10 5 –500 500 0.35typ 1.50typ E Weight : Approx 18.4g a. Part No. b. Lot No. 0.30typ –5 –50mA I B =–20mA 0 0 –1 –2 –3 –1 I C =–10A –5 –5A 0 –4 0 –0.5 Collector-Emitter Voltage V C E (V) –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 200 Typ 50 –0.5 –1 –5 25˚C 100 50 –30˚C 10 –0.02 –10 –17 Transient Thermal Resistance DC Cur rent Gain h FE 125˚C –0.1 0 –0.8 –0.1 –0.5 –1 –1.6 f T – I E Characteristics (Typical) –3.2 –5 –10 –17 θ j-a – t Characteristics 2 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) –2.4 Base-Emittor Voltage V B E (V) (V C E =–4V) 10 –0.02 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 100 –10 mp) –1 00 mA –2 p) mA e Te –200 em 0mA –15 Cas –30 –10 mA –17 ˚C ( 0 –50 (V C E =–4V) – 3 –30 – A 1.0 eT A 125 ˚C ( Cas 25˚C .5 –1 Collector Current I C (A) –15 0A I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) –3 .0 . –2 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) A –17 Collector Current I C (A) C tf (µs) –60 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 60 200 –40 D 1 Emitter Current I E (A) 16 10 –0.05 –3 –10 –100 Collector-Emitter Voltage V C E (V) –300 nk 0.1 si 0 0.02 at Without Heatsink Natural Cooling –0.1 he –0.5 120 ite 20 –1 fin p 160 In Ty –5 ith 40 s C W Collect or Cur ren t I C (A) –10 m M aximum Power Dissipa ti on P C (W) 10 Cu t-of f Fr eque ncy f T ( MH Z ) DC Cur rent Gain h F E 6.0±0.2 2.1 80 40 5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 19. 2SA1303 LAPT Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC3284) sElectrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit V ICBO VCB=–150V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –150min V VCBO –150 VCEO –150 –5 V V(BR)CEO IC –14 A hFE VCE=–4V, IC=–5A 50min IB –3 A VCE(sat) IC=–5A, IB=–0.5A –2.0max 50typ MHz VCB=–10V, f=1MHz 400typ pF 4.8±0.2 2.0±0.1 V VCE=–12V, IE=2A W Tj 150 °C COB –55 to +150 °C ø3.2±0.1 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg 3 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 12 –5 –10 5 –500 500 0.25typ 0.85typ C Weight : Approx 6.0g a. Part No. b. Lot No. 0.2typ 0 –1 0 –2 –3 0 –4 0 –0.2 –0.4 –0.6 –0.8 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 200 Typ 50 –1 25˚C 100 –30˚C 50 30 –0.02 –5 –10 –14 Transient Thermal Resistance DC Cur rent Gain h FE 125˚C –0.5 f T – I E Characteristics (Typical) –0.1 –0.5 emp ) p) Tem p) se eT Cas ˚C ( –1 –2 –1 –5 θ j-a – t Characteristics –10 –14 3 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) Tem 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 –0.02 (Ca –5A Collector-Emitter Voltage V C E (V) 100 –5 I C =–10A –30 I B =–20mA –1 ˚C –50mA –4 –10 ase –10 0mA –8 –2 C (C –1 50 m A 25˚ mA 125 –200 –14 Collector Current I C (A) –12 (V C E =–4V) –3 θ j- a ( ˚C/W) –7 00 –6 mA 00 m A A A m m mA 00 00 00 –3 –5 –4 I C – V BE Temperature Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) I C – V CE Characteristics (Typical) 1.4 E tf (µs) –60 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Collector Current I C (A) 2 4.0max 125(Tc=25°C) fT a b 20.0min PC 4.0 VEBO 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) –40 –10 nk Maxim um Power Dissip ation P C (W) si Co lle ctor Cu rr ent I C (A) at Collector-Emitter Voltage V C E (V) –200 he –100 ite –10 fin –0.2 –3 In Emitter Current I E (A) 10 Without Heatsink Natural Cooling ith –1 100 W 1 s 0.1 C –5 –0.5 0 0.02 1m 20 s 40 s p 0m Ty D m 10 60 130 10 80 Cut- off F req uency f T (MH Z ) DC Cur rent Gain h FE 15.6±0.4 9.6 1.8 Conditions Unit 2.0 Symbol Ratings 19.9±0.3 Symbol 5.0±0.2 sAbsolute maximum ratings Application : Audio and General Purpose 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 17
- 20. 2SA1386/1386A Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC3519/A) VCBO –180 –160 Conditions Symbol V –180 –160 VCEO Unit V –100max –160 ICBO –180 VCB= VEBO –5 V IEBO IC –15 A V(BR)CEO V µA –100max VEB=–5V –180min –160min IC=–25mA A hFE VCE=–4V, IC=–5A W VCE(sat) IC=–5A, IB=–0.5A –2.0max 2.0±0.1 ø3.2±0.1 50min∗ 130(Tc=25°C) 4.8±0.2 b V 150 Tstg °C fT VCE=–12V, IE=2A 40typ MHz –55 to +150 Tj °C COB VCB=–10V, f=1MHz 500typ 3 pF 1.05 +0.2 -0.1 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 4 –10 –10 5 –1 1 0.3typ 0.7typ 5.45±0.1 C Weight : Approx 6.0g a. Part No. b. Lot No. I B =–20mA –1 –2 –3 0 –4 0 –0.2 –0.4 –0.6 –0.8 h FE – I C Characteristics (Typical) (V C E =–4V) –5 –10 –15 Transient Thermal Resistance DC Curr ent Gain h FE Typ –1 p) 125˚C 100 25˚C –30˚C 50 20 –0.02 –0.1 –0.5 f T – I E Characteristics (Typical) –2 –1 –5 –10 –15 3 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) mp) mp) –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –1.0 Base Current I B (A) 300 10 –0.02 em I C =–10A –5A Collector-Emitter Voltage V C E (V) 100 –5 e Te –1 (Cas –50mA –30˚C –5 –10 eT –100mA –2 (V C E =–4V) e Te –150mA 0 –15 Cas –200mA –10 0 –3 (Cas –3 00 m A 25˚C A ˚C ( m 125 – 0 40 Collector Current I C (A) A I C – V BE Temperature Characteristics (Typical) θ j - a (˚C /W ) Collector Current I C (A) –7 00 –5 m 00 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) m A –15 1.4 E 0.2typ I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 B tf (µs) –40 DC Curr ent Gain h FE 2 4.0max –4 PC a V 20.0min IB 15.6±0.4 9.6 µA –100max 1.8 2SA1386 2SA1386A 5.0±0.2 Symbol External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 2SA1386A 2SA1386 2.0 Ratings 4.0 sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics Application : Audio and General Purpose 19.9±0.3 LAPT 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 130 –40 10 DC 0.1 1 Emitter Current I E (A) 18 10 –0.05 –3 –10 –50 –100 Collector-Emitter Voltage V C E (V) 2 –200 nk 1 0 0.02 si –0.1 at 1.2SA1386 2.2SA1386A he Without Heatsink Natural Cooling ite –1 –0.5 100 fin 20 –5 In Collecto r Cur ren t I C ( A) p ith Ty W Cut-o ff Fr eque ncy f T (MH Z ) –10 40 ms Ma xim um Powe r Dissipation P C ( W) 60 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 21. 2SA1488/1488A Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC3851/A) V ICBO VCB= –60 VEBO –6 V IEBO IC –4 A V(BR)CEO IB –1 A hFE PC 25(Tc=25°C) W VCE(sat) Tj 150 °C fT –55 to +150 °C COB µA V –80 VCB=–10V, f=1MHz Tstg VEB=–6V µA –100max IC=–25mA –60min –80min VCE=–4V, IC=–1A 40min IC=–2A, IB=–0.2A –0.5max V VCE=–12V, IE=0.2A 15typ MHz 90typ ø3.3±0.2 a b V pF 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –12 6 –2 –10 5 –200 200 0.25typ 0.75typ I B =–5mA 0 0 –1 –2 –3 –4 –5 –0.5 –1 I C =–3A –2A –1A 0 –0.1 –6 –0.5 Collector-Emitter Voltage V C E (V) –0.1 –0.5 0 –1 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 500 Typ 100 50 –1 Transient Thermal Resistance DC Curr ent Gain h FE 125˚C –0.5 25˚C 100 –30˚C 50 20 –0.02 –4 –0.1 f T – I E Characteristics (Typical) –1 –4 1 1 10 30 100ms Collect or Cur ren t I C (A) 50 10 1m 10 m s M aximu m Power Dissi pation P C (W) –5 20 1000 P c – T a Derating –10 30 100 Time t(ms) Safe Operating Area (Single Pulse) Typ –1.5 5 0.7 (V C E =–12V) 40 –1.0 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) 60 –0.5 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 –0.01 –2 eT emp ) e Te mp) (Cas e Tem p) –10mA –1 –3 –30˚C –20mA –2 –1.0 Cas –30mA (Cas –40m A –3 ˚C ( –50m A (V C E =–4V) –4 –1.5 125 A 25˚C –60m θ j - a (˚ C/W) A I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (sa t) (V ) Collector Current I C (A) –8 0m B C E V CE ( sat ) – I B Characteristics (Typical) –4 DC C urrent G ain h FE Weight : Approx 2.0g a. Part No. b. Lot No. 0.25typ I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 VCC (V) Cu t-off Fre quen cy f T ( MH Z ) 4.0±0.2 V –80 4.2±0.2 2.8 c0.5 0.8±0.2 –80 –60 10.1±0.2 ±0.2 –60 VCEO Unit 3.9 VCBO Conditions Symbol Unit External Dimensions FM20 (TO220F) (Ta=25°C) Ratings 2SA1488 2SA1488A –100max –100max 8.4±0.2 sElectrical Characteristics 16.9±0.3 Ratings Symbol 2SA1488 2SA1488A 13.0min sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose s DC –1 –0.5 Without Heatsink Natural Cooling –0.1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 20 W ith In 150x150x2 1 00x 1 0 10 0x 2 fin ite he at si nk 50x50x2 Without Heatsink 2 0 0.005 0.01 –0.05 0.05 0.1 0.5 Emitter Current I E (A) 1 3 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 19
- 22. 2SA1492 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC3856) sElectrical Characteristics (Ta=25°C) Ratings Unit VCBO –180 VCEO –180 External Dimensions MT-100(TO3P) (Ta=25°C) Unit V ICBO VCB=–180V –100max µA V IEBO VEB=–6V –100max µA IC=–50mA –180min V VEBO –6 V V(BR)CEO IC –15 A hFE VCE=–4V, IC=–3A 50min∗ 2.0±0.1 ø3.2±0.1 VCE(sat) IC=–5A, IB=–0.5A –2.0max V W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg 3 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 4 –10 –10 5 –1 1 0.6typ 0.9typ C Weight : Approx 6.0g a. Part No. b. Lot No. 0.2typ V CE ( sat ) – I B Characteristics (Typical) I B =–20mA 0 0 –1 –2 –3 I C =–10A –5A 0 –4 0 Collector-Emitter Voltage V C E (V) –0.5 –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 Typ 100 50 25˚C 100 –30˚C 50 20 –0.02 –5 –10 –15 –0.1 –0.5 f T – I E Characteristics (Typical) –1 3m 10 P c – T a Derating 0m s s s C nk Collector-Emitter Voltage V C E (V) –200 si –100 at –10 he Without Heatsink Natural Cooling 100 ite Collector Cur rent I C (A) m –1 –0.1 –3 1000 2000 fin 10 D –5 –0.5 100 Time t(ms) In 10 Temp) 10 ith 20 20 1 W –10 Typ Emitter Current I E (A) 0.1 130 10 1 –10 –15 0.5 –40 30 0.1 –5 1 Safe Operating Area (Single Pulse) (V C E =–12V) –2 3 Collector Current I C (A) Collector Current I C (A) 0 0.02 –1 θ j-a – t Characteristics M aximum Power Dissipa ti on P C ( W) –1 125˚C Transient Thermal Resistance DC Curr ent Gain h FE 300 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 10 –0.02 –5 (Case –1 –30˚C –50mA –5 –10 mp) Temp ) –0 .1 A –2 (Case A 25˚C – 0 .2 –10 e Te 4A Cas –0. (V C E =–4V) –15 – 3 ˚C ( 6A θ j - a (˚C/W) –1 A –0. 125 –15 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (sa t) (V ) I C – V CE Characteristics (Typical) 1.4 E tf (µs) –40 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Cut- off F re quen cy f T (MH Z ) 2 4.0max A 130(Tc=25°C) 20.0min –4 PC Collector Current I C (A) a 4.8±0.2 b IB DC Curr ent Gain h FE 15.6±0.4 9.6 1.8 Ratings 5.0±0.2 Conditions 2.0 Symbol 19.9±0.3 Symbol 4.0 sAbsolute maximum ratings Application : Audio and General Purpose 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 23. 2SA1493 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC3857) sAbsolute maximum ratings (Ta=25°C) Symbol Ratings –200 sElectrical Characteristics Unit VCBO Application : Audio and General Purpose External Dimensions MT-200 (Ta=25°C) Symbol Conditions Ratings Unit V ICBO VCB=–200V –100max µA VEB=–6V –100max µA IC=–50mA –200min V V IEBO –6 V V(BR)CEO IC –15 A hFE VCE=–4V, IC=–5A 50min∗ IB –5 A VCE(sat) IC=–10A, IB=–1A – 3.0max V VCE=–12V, IE=0.5A 20typ MHz VCB=–10V, f=1MHz 400typ pF 2.1 W Tj 150 °C COB –55 to +150 °C 9 a b ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg 2 4.0max 150(Tc=25°C) fT 20.0min PC 2-ø3.2±0.1 7 –200 VEBO 24.4±0.2 21.4±0.3 VCEO 6.0±0.2 36.4±0.3 3 5.45±0.1 B VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 12 –5 –10 5 –500 500 0.3typ 0.9typ E Weight : Approx 18.4g a. Part No. b. Lot No. 0.2typ 0 0 –1 –2 –3 –10A –5A 0 –4 0 Collector-Emi tter Voltage V C E (V) 200 DC C urrent G ain h FE Typ 100 50 –1 –30˚C 50 20 –0.02 –5 –10 –15 –0.1 –0.5 –5 –10 –15 0.1 1 10 m C s 10 0m s 10ms s 2000 si nk –300 80 at –100 he –10 Collector-Emitter Voltage V C E (V) ite Without Heatsink Natural Cooling fin –1 120 In –5 –2 1000 P c – T a Derating –0.1 10 100 Time t(ms) ith Co lle ctor Cu rr ent I C ( A) D –10 –0.5 emp) 0.5 W 10 (CaseT 1 160 3m Typ Cut- off F re quen cy f T ( MH Z ) –1 2 –50 20 20 –2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) 30 1 –1 Collector Current I C (A) (V C E =–12V) Emitter Current I E (A) 0 Base-Emittor Voltage V B E (V) 25˚C 100 f T – I E Characteristics (Typical) 0.1 0 –4 125˚C Collector Current I C (A) 0 0.02 –3 (V C E =–4V) 300 –0.5 –2 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) –0.1 –1 Base Current I B (A) h FE – I C Characteristics (Typical) 10 –0.02 –5 I C =–15A –30˚C –1 eTe mp) Temp ) I B =–5 0m A –5 –10 Cas –1 00 mA –2 (Case A ˚C ( –200m –10 (V C E =–4V) 125 mA θ j- a (˚C /W ) –400 –15 25˚C mA Transient Thermal Resistance – 0 60 Maximu m Power Dissip ation P C (W) A Collector-Emitter Saturation Voltage V C E (s at) (V ) 5A –1. Collector Current I C (A) –1 I C – V BE Temperature Characteristics (Typical) –3 Collector Current I C (A) V CE ( sa t ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) DC C urrent G ain h FE C tf (µs) –60 3.0 +0.3 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) –15 0.65 +0.2 -0.1 1.05 +0.2 -0.1 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 21
- 24. 2SA1494 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC3858) sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol Ratings –200 V External Dimensions MT-200 (Ta=25°C) Conditions ICBO Ratings Unit VCB=–200V Symbol Unit VCBO Application : Audio and General Purpose –100max µA 36.4±0.3 24.4±0.2 VEB=–6V –100max µA IC=–50mA –200min V VCEO –200 V IEBO VEBO –6 V V(BR)CEO IC –17 A hFE VCE=–4V, IC=–8A 50min∗ IB –5 A VCE(sat) IC=–10A, IB=–1A –2.5max V PC 200(Tc=25°C) W fT VCE=–12V, IE=1A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180) 2-ø3.2±0.1 7 21.4±0.3 a b 2 3 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –40 4 –10 –10 5 –1 1 0.6typ 0.9typ C E Weight : Approx 18.4g a. Part No. b. Lot No. 0.2typ I B =–20mA 0 0 –1 –2 –3 –4 –10A 0 0 –1 –2 (V C E =–4V) 200 Typ 100 50 –5 25˚C 100 –30˚C 50 20 –0.02 –10 –17 –0.1 –0.5 f T – I E Characteristics (Typical) –10 –17 3m s 10ms Collector-Emitter Voltage V C E (V) –300 ) nk –100 si –10 at –2 he Without Heatsink Natural Cooling 120 ite –1 fin –5 160 In Collector Curr ent I C (A) C ith D –0.1 10 1000 W –10 –0.5 100 s Ma xim um Powe r Dissipat io n P C (W) m s 10 Emitter Current I E (A) 10 P c – T a Derating 0m 20 1 1 Time t(ms) 10 Typ 0.1 0.1 200 20 Cut- off Fr equ ency f T (MH Z ) –5 0.5 –50 30 22 –1 1 Safe Operating Area (Single Pulse) (V C E =–12V) –2 2 Collector Current I C (A) Collector Current I C (A) 0 0.02 Transient Thermal Resistance DC Curr ent Gain h FE 125˚C –1 –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –3 Base Current I B (A) h FE – I C Characteristics (Typical) Temp –5A Collector-Emitter Voltage V C E (V) 10 –0.02 –5 I C =–15A (Case –1 –30˚C –50mA –5 –10 e Te mp) Temp ) –1 00 m A –2 (Cas A (Case –200m –10 –15 125˚C 0mA 25˚C –40 Collector Current I C (A) 0 θ j - a (˚C /W) A .5 –60 mA (V C E =–4V) –17 –3 –1A –1 –15 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –17 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) Collector Current I C (A) 9 4.0max 20.0min Tstg DC Curr ent Gain h FE 6.0±0.2 2.1 80 40 5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2000
- 25. 2SA1567 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC4064) hFE V VCE=–1V, IC=–6A 50min IC=–6A, IB=–0.3A –0.35max V A VCE(sat) 35(Tc=25°C) W fT VCE=–12V, IE=0.5A 40typ MHz 150 °C COB VCB=–10V, f=1MHz 330typ pF –55 to +150 °C Tstg 1.35±0.15 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) 5 0 –5mA 0 –1 –2 –3 –4 –5 –0.5 0 –6 –10 –2 –100 –1000 (V C E =–1V) 500 125˚C D C Cur r ent Gai n h F E Typ 100 50 25˚C –30˚C 100 50 30 –0.02 –10 –0.1 f T – I E Characteristics (Typical) –1 –10 0.3 1 10 0m s 1000 s ite he 150x150x2 at si nk –0.1 fin Without Heatsink Natural Cooling 20 In –0.5 ith –1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 30 W Collector Cur rent I C (A) s m DC –5 –0.05 –3 100 P c – T a Derating 10 10 Typ 12 –1.2 Time t(ms) Maximu m Power Dissi pation P C (W) 1m 20 –1.0 35 –10 30 –0.8 0.5 –30 40 –0.6 1 Safe Operating Area (Single Pulse) 50 Cut- off Fr equ ency f T (M H Z ) –0.4 4 (V C E =–12V) Emitter Current I E (A) –0.2 Collector Current I C (A) Collector Current I C (A) 1 0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 500 0 0.05 0.1 p) 0 –3000 Base-Emittor Voltage V B E (V) (V C E =–1V) –1 –4 Base Current I B (mA) h FE – I C Characteristics (Typical) –0.1 –6 –2 Collector-Emitter Voltage V C E (V) 30 –0.02 –8 Tem 12A –10mA –2 –9A –20mA –6A –4 –1.0 –3A –40mA –10 –1A –6 (V C E =–1V) –12 –1.5 I C= – –60mA I C – V BE Temperature Characteristics (Typical) se –2 –10 0m A –8 0.2typ ˚C A I B= –10 Collector Current I C (A) 0m Collector-Emitter Saturation Voltage V C E (s a t) (V ) mA 00 –15 0.4typ V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) –12 0.4typ 120 –120 Weight : Approx 2.0g a. Part No. b. Lot No. B C E (Ca –10 tf (µs) 125 –6 4 tstg (µs) Collector Current I C (A) –24 ton (µs) IB2 (mA) IB1 (mA) VBB2 (V) VBB1 (V) θ j- a (˚ C/W) IC (A) RL (Ω) 2.4±0.2 2.2±0.2 Transient Thermal Resistance VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 25˚C Tj 3.9 –3 PC 13.0min IB DC Curr ent Gain h F E ø3.3±0.2 a b mp) A e Te –12 µA –50min (Cas IC –100max 4.0±0.2 V(BR)CEO 0.8±0.2 IEBO V 4.2±0.2 2.8 c0.5 mp) V –6 10.1±0.2 –30˚C –50 VEBO µA e Te VCEO Symbol –100max IC=–25mA ICBO (Cas V Conditions VEB=–6V –50 Unit VCB=–50V Unit VCBO Symbol External Dimensions FM20 (TO220F) (Ta=25°C) Ratings ±0.2 sElectrical Characteristics Ratings 8.4±0.2 sAbsolute maximum ratings (Ta=25°C) Application : DC Motor Driver, Chopper Regulator and General Purpose 16.9±0.3 LOW VCE (sat) 100x100x2 10 50x50x2 Without Heatsink –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 23
- 26. 2SA1568 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC4065) IEBO V V(BR)CEO IC A IB –3 mA V hFE VCE=–1V, IC=–6A 50min A VCE(sat) IC=–6A, IB=–0.3A –0.35max IECO=–10A –2.5max V V 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=–12V, IE=0.5A 40typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 330typ pF 13.0min 1.35±0.15 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) 5 –1 –2 –3 –4 –5 0 –7 –10 –6 –100 Collector-Emitter Voltage V C E (V) –1000 (V C E =–1V) 300 125˚C D C Cur r ent Gai n h F E 100 25˚C –30˚C 100 10 10 2 –0.02 –10 –0.1 Collector Current I C (A) –1 –10 p) Tem 0.3 1 10 1000 s ite he 150x150x2 at si nk Without Heatsink Natural Cooling 20 fin –0.5 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 30 In Maximu m Power Dissi pation P C (W) 0m –1 –0.05 –3 100 ith 24 0.5 W Collector Cur rent I C (A) DC s –5 s –0.1 10 –1.2 P c – T a Derating m 20 –1.0 Time t(ms) 10 10 Typ 30 –0.8 35 1m 40 –0.6 1 Safe Operating Area (Single Pulse) –10 Emitter Current I E (A) –0.4 4 –30 1 –0.2 θ j-a – t Characteristics (V C E =–12V) 50 0 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off Fr equ ency f T (M H Z ) DC Curr ent Gain h F E Typ 0 0.05 0.1 0 –3000 h FE – I C Temperature Characteristics (Typical) 300 –1 –4 Base-Emittor Voltage V B E (V) (V C E =–1V) –0.1 –6 Base Current I B (mA) h FE – I C Characteristics (Typical) 2 –0.02 –8 –2 Transient Thermal Resistance Collector Current I C (A) I B= 0 A 0 –0.5 –9A –10mA –2 –3 A –20mA –1.0 –1A –4 –10 –6A –40mA (V C E =–1V) –12 –1.4 –12 –60mA I C – V BE Temperature Characteristics (Typical) I C= –8 –6 0.2typ ˚C –1 00 mA –2 –10 Collector-Emitter Saturation Voltage V C E (s a t) (V ) 0mA 00 mA –15 0.4typ V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) –12 0.4typ 120 –120 se –10 B C E (Ca –6 4 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) tstg (µs) 125 –24 ton (µs) IB2 (mA) IB1 (mA) VBB2 (V) VBB1 (V) Collector Current I C (A) IC (A) RL (Ω) 2.4±0.2 2.2±0.2 θ j - a (˚C /W) VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 25˚C Tstg 3.9 PC ø3.3±0.2 a b 0.8±0.2 –60min 8.4±0.2 –60max 16.9±0.3 VEB=–6V IC=–25mA 4.2±0.2 2.8 c0.5 mp) V –6 – +12 10.1±0.2 e Te –60 VEBO µA (Cas VCEO –100max 4.0±0.2 ICBO mp) V Unit –30˚C –60 Ratings VCB=–60V VCBO External Dimensions FM20 (TO220F) (Ta=25°C) Conditions ±0.2 Symbol Unit C Application : DC Motor Driver, Chopper Regulator and General Purpose sElectrical Characteristics Ratings Symbol Equivalent curcuit e Te sAbsolute maximum ratings (Ta=25°C) B (Cas Built-in Diode at C–E Low VCE (sat) E ( 250 Ω ) 100x100x2 10 50x50x2 Without Heatsink –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 2 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 27. 2SA1667/1668 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC4381/4382) –200 VCB= VEBO –6 V IEBO IC –2 A V(BR)CEO µA –150 ICBO V –10max –200 10.1±0.2 V µA –10max VEB=–6V –150min IC=–25mA –200min hFE VCE=–10V, IC=–0.7A 60min W VCE(sat) IC=–0.7A, IB=–0.07A –1.0max V Tj 150 °C fT VCE=–12V, IE=0.2A 20typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 60typ pF Tstg 3.9 A 25(Tc=25°C) 13.0min –1 PC ø3.3±0.2 a b V IB 4.2±0.2 2.8 c0.5 4.0±0.2 V Unit –10max Conditions Symbol External Dimensions FM20 (TO220F) 0.8±0.2 –150 Unit (Ta=25°C) Ratings 2SA1667 2SA1668 ±0.2 VCEO sElectrical Characteristics 8.4±0.2 Ratings Symbol 2SA1667 2SA1668 VCBO –150 –200 16.9±0.3 sAbsolute maximum ratings (Ta=25°C) Application : TV Vertical Output, Audio Output Driver and General Purpose 1.35±0.15 1.35±0.15 sTypical Switching Characteristics (Common Emitter) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 –100 –0.4 0 –2 –4 –6 –8 –1 –10 –100 (V C E =–10V) 400 100 –0.1 –1 Transient Thermal Resistance D C Cur r ent Gai n h F E Typ 25˚C –30˚C 100 30 –0.01 –2 Collector Current I C (A) –0.1 –1 –2 0.5 1 2 Temp) at 0x he si nk –100 1 00x 1 0 10 ite –10 Collector-Emitter Voltage V C E (V) 150x150x2 fin 1 In Without Heatsink Natural Cooling 1.2SA1667 2.2SA1668 20 ith M aximu m Power Dissipat io n P C (W) C W Collector Curr ent I C (A) s 2 Natural Cooling Silicone Grease Heatsink: Aluminum in mm s ms 1 –0.01 –1 1000 P c – T a Derating –0.1 10 –1.2 100 1m 20 5m D –1 20 ) 10 25 40 –1.0 Time t(ms) –5 30 –0.8 1 Safe Operating Area (Single Pulse) Typ –0.6 5 (V C E =–12V) 0.1 –0.4 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off Fr equ ency f T (M H Z ) D C Cur r ent Gai n h F E 125˚C Emitter Current I E (A) –0.2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 400 50 0 Base-Emittor Voltage V B E (V) (V C E =–10V) 0 0.01 0 –1000 Base Current I B (mA) h FE – I C Characteristics (Typical) 40 –0.01 –0.8 –0.4 I C =–2A –2 –1.2 –1A –0 .5A Collector-Emitter Voltage V C E (V) –1.6 (Case –2 0 –10 –2 –30˚C I B =–5mA/Step (V C E =–10V) –3 Temp –1.2 I C – V BE Temperature Characteristics (Typical) mp) Collector Current I C (A) –1.6 0 0.5typ (Case A –0.8 1.5typ B C E e Te Collector-Emitter Saturation Voltage V C E (s at) (V ) –2.0 –5 0.4typ Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) V CE ( sa t ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 0m 100 tstg (µs) (Cas 5 –10 ton (µs) IB2 (mA) 25˚C –1 20 IB1 (mA) 125˚C –20 VBB2 (V) VBB1 (V) Collector Current I C (A) IC (A) RL (Ω) θ j- a (˚C /W ) VCC (V) 50x50x2 Without Heatsink 2 2 –300 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 25
- 28. 2SA1673 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC4388) Ratings VCBO –180 V VCEO –180 sElectrical Characteristics Unit External Dimensions FM100(TO3PF) (Ta=25°C) Unit VCB=–180V –10max µA V IEBO VEB=–6V –10max µA VEBO –6 V V(BR)CEO IC –15 A hFE –180min IC=–50mA VCE=–4V, IC=–3A 15.6±0.2 V 50min∗ VCE(sat) IC=–5A, IB=–0.5A –2.0max V W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C Tj Tstg 3.0 A 85(Tc=25°C) 3.3 –4 PC ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 5.45±0.1 1.5 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) –40 4 –10 –10 5 –1 1 0.6typ 0.9typ 0.2typ 4.4 0 0 –1 –2 –3 0 –4 0 –0.5 –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 Typ 100 50 125˚C 25˚C 100 –30˚C 50 20 –0.02 –5 –10 –15 f T – I E Characteristics (Typical) –0.1 –0.5 –1 –5 –10 –15 1 m 0m s s s C nk Collector-Emitter Voltage V C E (V) –200 si –100 at –10 he Without Heatsink Natural Cooling 60 ite –1 80 fin –2 –0.1 –3 1000 2000 P c – T a Derating –0.2 10 p) 100 Time t(ms) In Collecto r Cur rent I C (A) D –5 –0.5 ase Tem 10 ith 10 26 0.1 W 20 Emitter Current I E (A) 0.5 M aximu m Power Dissip ation P C (W) 10 10 –10 Typ 1 1 100 3m 0.1 3 –40 30 –2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =–12V) 0 0.02 –1 Collector Current I C (A) Collector Current I C (A) Cut- off F req uency f T (MH Z ) Transient Thermal Resistance DC Cur rent Gain h FE 300 –1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 mp) Temp ) I C =–10A –5A Collector-Emitter Voltage V C E (V) 10 –0.02 –5 –30˚C (C I B =–20mA –1 (Case –50mA –5 –10 25˚C –0 .1 A –2 e Te A Cas – 0 .2 –10 (V C E =–4V) ˚C ( A –15 125 –0.4 E – 3 Collector Current I C (A) 6A C Weight : Approx 6.5g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) –0. Collector-Emitter Saturation Voltage V C E (s at) (V ) A 3.35 V CE ( sat ) – I B Characteristics (Typical) –15 –1 B 0.65 +0.2 -0.1 1.5 tf (µs) I C – V CE Characteristics (Typical) 0.8 2.15 1.05 +0.2 -0.1 VCC (V) Collector Current I C (A) 1.75 5.45±0.1 sTypical Switching Characteristics (Common Emitter) DC Cur rent Gain h F E 3.45 ±0.2 ø3.3±0.2 a b 16.2 IB 5.5±0.2 5.5 ICBO 1.6 Ratings 9.5±0.2 Conditions Symbol 23.0±0.3 Symbol 0.8±0.2 sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 40 20 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 29. 2SA1693 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC4466) sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Unit VCB=–80V –10max µA V IEBO VEB=–6V –10max µA V V(BR)CEO IC=–50mA –80min V –6 A hFE VCEO –80 VEBO IC 50min∗ VCE=–4V, IC=–2A a VCE(sat) IC=–2A, IB=–0.2A –1.5max V W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 2 3 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ C 0.21typ 0 0 –1 –2 –3 –4 –4A –2A 0 0 –0.5 Collector-Emitter Voltage V C E (V) –1.0 (V C E =–4V) 300 100 50 125˚C Transient Thermal Resistance DC Cur rent Gain h FE Typ –1 25˚C –30˚C 100 50 30 –0.02 –5 –6 –0.1 Collector Current I C (A) –0.5 –2 –1 –5 –6 5 1 0.5 0.3 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) ) –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –1.5 Base Current I B (A) h FE – I C Characteristics (Typical) 30 –0.02 –2 I C =–6A Temp –1 (Case I B =–10mA –30˚C –20mA –2 –4 e Te mp) e Te mp) –30mA –2 (Cas –50mA 25˚C –4 Cas –8 0m A ˚C ( –1 00 m A (V C E =–4V) –6 –3 mA 125 – 0 15 Collector Current I C (A) 0 A I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/W) Collector Current I C (A) –2 0m Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –6 1.4 E tf (µs) –30 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 2.0±0.1 ø3.2±0.1 4.0max A 60(Tc=25°C) 20.0min –3 PC Tstg 4.8±0.2 b IB 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 60 10 –10 Typ ite he at si nk Collector Curr ent I C (A) fin Without Heatsink Natural Cooling 40 In –1 –0.5 ith DC W 10 s 100ms –5 20 m M aximum Power Dissipa ti on P C ( W) –20 30 Cut -off Fre quen cy f T (M H Z ) DC Curr ent Gain h FE 15.6±0.4 9.6 4.0 V 19.9±0.3 –80 1.8 ICBO VCBO Symbol Unit 5.0±0.2 Ratings Ratings 2.0 Conditions –6 Symbol 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 5 6 –0.1 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 27
- 30. 2SA1694 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC4467) Application : Audio and General Purpose sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) External Dimensions MT-100(TO3P) (Ta=25°C) Unit –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO –8 A hFE VCEO –120 VEBO IC –120min IC=–50mA V 19.9±0.3 V 50min∗ VCE=–4V, IC=–3A a VCE(sat) IC=–3A, IB=–0.3A –1.5max V W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 300typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 2 3 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 10 –4 –10 5 –0.4 0.4 0.14typ 1.40typ C Weight : Approx 6.0g a. Part No. b. Lot No. 0.21typ V CE ( s a t ) – I B Characteristics (Typical) 0 –1 –2 –3 –4 –4A 0 (V C E =–4V) 300 100 50 –1 –5 125˚C Transient Thermal Resistance DC Curr ent Gain h FE Typ 25˚C 100 –30˚C 50 30 –0.02 –8 mp) e Te –0.5 –0.1 –0.5 f T – I E Characteristics (Typical) –1.5 –1 –5 –8 3 1 0.5 0.3 1 10 100 1000 Time t(ms) Collector Current I C (A) Collector Current I C (A) –1.0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0 Base Current I B (A) h FE – I C Characteristics (Typical) mp) –2A 0 Collector-Emitter Voltage V C E (V) 30 –0.02 mp) –2 I C =–8A (Cas I B =–10mA –1 –30˚C –2 –4 e Te –25mA –6 e Te –50mA –4 –2 (Cas –7 5m A Cas mA ˚C ( –100 125 5 (V CE =–4V) –8 Collector Current I C (A) –1 A 0m θ j - a ( ˚ C/W) 0 A Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 50 Collector Current I C (A) –3 –2 0m –6 0 I C – V BE Temperature Characteristics (Typical) –3 25˚C I C – V CE Characteristics (Typical) 1.4 E tf (µs) –40 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) –8 2.0±0.1 ø3.2±0.1 4.0max A 80(Tc=25°C) 20.0min –3 PC Tstg 4.8±0.2 b IB D C Cur r ent Gai n h F E 15.6±0.4 9.6 1.8 VCB=–120V –120 5.0±0.2 ICBO VCBO Symbol 2.0 Ratings Unit 4.0 Conditions Ratings Symbol Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 80 –20 10 si nk Co lle ctor Cu rren t I C (A) 40 at Without Heatsink Natural Cooling he –0.5 ite –1 60 fin Cut- off F req uency f T (MH Z ) DC In 10 s ith –5 Typ 20 100ms W –10 m Maxim um Power Dissip ation P C (W) 30 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 28 5 8 –0.1 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 12 5 Ambient Temperature Ta(˚C) 150
- 31. 2SA1695 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC4468) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Unit VCB=–140V –10max µA V IEBO VEB=–6V –10max µA V VCEO –140 VEBO –6 V V(BR)CEO IC –10 A hFE –140min IC=–50mA V 50min∗ VCE=–4V, IC=–3A 15.6±0.4 9.6 4.0 –140 a VCE(sat) IC=–5A, IB=–0.5A –0.5max V W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 2 3 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 5.45±0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 12 –5 –10 5 –0.5 0.5 0.17typ 1.86typ C 0.27typ I C – V BE Temperature Characteristics (Typical) –3 –10 –2 I B =–10mA –1 0 –2 –3 –4 –2 I C =–10A –5A 0 0 –0.5 Collector-Emitter Voltage V C E (V) –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 200 Typ 100 50 –1 –5 Transient Thermal Resistance DC Curr ent Gain h F E 125˚C –0.5 25˚C 100 –30˚C 50 30 –0.02 –10 –0.1 –0.5 –1 f T – I E Characteristics (Typical) –1.5 –1 –5 –10 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) Collector Current I C (A) ) 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 30 –0.02 –4 Temp –1 (Case –25mA –6 –30˚C –50mA –4 –2 p) –7 5m A –6 –8 mp) mA Tem –100 se –8 e Te A (Ca 0m (Cas –15 ˚C 0 25˚C –2 (V C E =–4V) 125 0 A 0m Collector Current I C (A) –3 A 0m θ j- a ( ˚C/W) 00 mA Collector-Emitter Saturation Voltage V C E (s at) (V ) –4 Collector Current I C (A) Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) –10 0 1.4 E tf (µs) –60 0.65 +0.2 -0.1 5.45±0.1 B I C – V CE Characteristics (Typical) 2.0±0.1 ø3.2±0.1 4.0max A 100(Tc=25°C) 20.0min –4 PC Tstg 4.8±0.2 b IB Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 100 –0.1 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 nk Emitter Current I E (A) 10 si 1 50 at 0.1 he 0 0.02 ite ms Without Heatsink Natural Cooling fin 10 –0.5 In s –1 ith 3m s 10 DC –5 0m Typ 10 20 Co lle ctor Cu rren t I C ( A) –10 W Maximu m Power Diss ip ation P C (W) –30 30 Cut-o ff F requ ency f T (MH Z ) DC Curr ent Gain h F E 1.8 ICBO VCBO Symbol 5.0±0.2 Ratings Unit 2.0 Conditions Ratings 19.9±0.3 Symbol Application : Audio and General Purpose 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 29
- 32. 2SA1725 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC4511) sElectrical Characteristics V(BR)CEO IC –6 A VEB=–6V hFE –10max µA IC=–25mA IEBO V –80min V 10.1±0.2 50min∗ VCE=–4V, IC=–2A A VCE(sat) IC=–2A, IB=–0.2A –0.5max V 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tj Tstg –55 to +150 3.9 –3 PC ø3.3±0.2 a b 13.0min IB 1.35±0.15 1.35±0.15 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ –1 0 –1 0 –2 –3 0 –0.5 –1.0 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 300 100 50 125˚C Transient Thermal Resistance DC C urrent G ain h FE Typ –1 p) –0.5 0 25˚C –30˚C 100 50 30 –0.02 –5 –6 –0.1 Collector Current I C (A) –1.5 –0.5 –1 θ j-a – t Characteristics 5 1 0.5 0.4 1 –5 –6 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) –1 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –1.5 Base Current I B (A) 300 ) –2A 0 –4 h FE – I C Characteristics (Typical) –0.1 Tem I C =–6A –4A Collector-Emitter Voltage V C E (V) 30 –0.02 –2 emp –1 –30˚C I B =–10mA se –20mA –2 se T –30mA –4 (Ca –3 –2 (Ca –50mA ˚C Collector Current I C (A) –4 25˚C A –8 0m A 125 –1 00 m –5 (V CE =–4V) –6 –3 Collector Current I C (A) mA I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) – 0 15 Collector-Emitter Saturation Voltage V C E (s at) (V ) –2 A Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( s a t ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) m 00 2.4±0.2 2.2±0.2 VCC (V) D C Cur r ent Gai n h F E 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) –6 4.2±0.2 2.8 c0.5 mp) V –6 µA e Te –80 VEBO –10max 4.0±0.2 VCEO VCB=–80V ICBO 0.8±0.2 V Unit ±0.2 –80 Ratings (Cas Unit VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions 8.4±0.2 Symbol Ratings 16.9±0.3 sAbsolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 30 –10 10 100ms si nk –0.1 at Without Heatsink Natural Cooling he –0.5 ite –1 20 fin 10 s DC In 20 m ith Collecto r Cur ren t I C (A) –5 W Cut -off Fre quen cy f T ( MH Z ) Typ M aximum Po wer Dissipat io n P C (W) –20 30 10 Without Heatsink 2 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 30 5 6 –0.05 –3 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 33. 2SA1726 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC4512) sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose sElectrical Characteristics Symbol External Dimensions MT-25(TO220) (Ta=25°C) Unit VCB=–80V –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–25mA –80min V –6 A hFE –80 VEBO IC 50min∗ VCE=–4V, IC=–2A A VCE(sat) IC=–2A, IB=–0.2A –0.5max V 50(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF –55 to +150 °C b ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg 2.5 2.5 1.4 B C E VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ Weight : Approx 2.6g a. Part No. b. Lot No. tf (µs) –30 0.21typ 0 0 –1 –2 –3 –4 0 –0.5 –1.0 (V C E =–4V) 50 –5 –6 125˚C Transient Thermal Resistance DC Cur rent Gain h FE 100 25˚C –30˚C 100 50 30 –0.02 –0.1 Collector Current I C (A) –0.5 –1.5 –1 –5 –6 p) 5 1 0.5 0.4 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) Typ –1 –0.5 0 Base-Emittor Voltage V B E (V) 300 –0.5 0 –1.5 (V C E =–4V) 300 ) –2A 0 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 Tem I C =–6A –4A Collector-Emitter Voltage V C E (V) 30 –0.02 –2 emp –1 –30˚C I B =–10mA se –20mA –2 –4 se T –30mA –2 (Ca –50mA (Ca –4 ˚C A –8 0m A 125 –1 00 m (V CE =–4V) –6 –3 A Collector Current I C (A) –1 m 50 I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/ W) 0 A Collector-Emitter Saturation Voltage V C E (s at) (V) Collector Current I C (A) –2 0m V CE ( sa t ) – I B Characteristics (Typical) 25˚C I C – V CE Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 50 –10 10 100ms Typ 0.5 1 Emitter Current I E (A) 5 6 –0.05 –3 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 nk 0.05 0.1 si 0 0.02 at –0.1 he Without Heatsink Natural Cooling 30 ite –0.5 fin –1 40 In 10 s DC ith 20 m W Collector Curr ent I C (A) –5 Ma xim um Powe r Dissipation P C (W) –20 30 Cu t-of f Fr eque ncy f T (MH Z ) DC Curr ent Gain h FE 1.35 0.65 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) –6 2.0±0.1 ø3.75±0.2 a 4.0max –3 PC 12.0min IB 4.8±0.2 mp) VCEO 10.2±0.2 e Te V (Cas –80 3.0±0.2 ICBO VCBO 16.0±0.7 Ratings Unit 8.8±0.2 Conditions Ratings Symbol 20 10 2 0 Without Heatsink 0 25 50 75 100 1 25 150 Ambient Temperature Ta(˚C) 31
- 34. 2SA1746 LOW VCE (sat) SiliconPNP Epitaxial Planar Transistor sElectrical Characteristics Unit µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–25mA –50min V –12(Pulse–20) A hFE –50 VEBO 50min VCE=–1V, IC=–5A IB –4 A VCE(sat) IC=–5A, IB=–80mA –0.5max PC 60(Tc=25°C) W VBE(sat) IC=–5A, IB=–80mA –1.2max 150 °C fT VCE=–12V, IE=1A 25typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 400typ pF 3.3 3.0 V 1.05 +0.2 -0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 4 –5 –10 5 –80 80 0.5typ 0.6typ 0.3typ 4.4 V CE ( sat ) – I B Characteristics (Typical) Weight : Approx 6.5g a. Part No. b. Lot No. I B =–10mA –2 0 0 –1 –2 –3 –4 –5 –3A 0 –3 –6 –10 –100 h FE – I C Temperature Characteristics (Typical) (V C E =–1V) 500 Typ 100 Transient Thermal Resistance 125˚C D C Cur r ent Gai n h F E 500 25˚C –30˚C 100 –5 –1 50 –0.03 –10 Collector Current I C (A) p) ) em emp eTe –0.5 –0.1 –0.5 –1.0 –1.5 –5 –1 –10 θ j-a – t Characteristics 4 1 0.5 0.2 1 10 100 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 40 0 Base-Emittor Voltage V B E (V) (V C E =–1V) –0.5 0 –1000 Base Current I B (mA) h FE – I C Characteristics (Typical) –0.1 seT –2 –5A –1A Collector-Emitter Voltage V C E (V) 50 –0.03 –4 I C =–10A (Cas –0.5 –30˚C –4 –6 seT –30m A –8 (Ca –6 –1.0 (Ca –50mA ˚C –8 –10 125 Collector Current I C (A) –70mA (V C E =–1V) 25˚C –10 E –12 –1.5 Collector Current I C (A) –100 mA C I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) –12mA Collector-Emitter Saturation Voltage V C E (s a t) (V ) –12 B 3.35 1.5 tf (µs) –20 0.65 +0.2 -0.1 5.45±0.1 1.5 VCC (V) I C – V CE Characteristics (Typical) 0.8 2.15 5.45±0.1 sTypical Switching Characteristics (Common Emitter) D C Cur r ent Gai n h F E 1.75 16.2 Tstg 3.45 ±0.2 ø3.3±0.2 a b V Tj 5.5±0.2 mp) VCEO 15.6±0.2 5.5 –10max V 1.6 VCB=–70V –70 9.5±0.2 ICBO VCBO Symbol 23.0±0.3 Ratings Unit IC External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Ratings Symbol 0.8±0.2 sAbsolute maximum ratings (Ta=25°C) Application : Chopper Regulator, Switch and General Purpose 60 –30 10 s s at si 20 nk Collector Curre nt I C (A) he Without Heatsink Natural Cooling ite –1 fin 10 40 In 20 –5 ith Cu t-of f Fr eque ncy f T (MH Z ) m Typ W Maxim um Power Dissip ation P C (W) 0µ s 10 1m –10 30 Without Heatsink 0 0.1 1 Emitter C urrent I E (A) 32 10 –0.3 –3 –10 –50 Collector-Emitter Voltage V C E (V) –100 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150
- 35. 2SA1859/1859A Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC4883/A) –150 VCB= –180 V VEB=–6V IC –2 A µA IC=–10mA V(BR)CEO –10max –150min –180min 60 to 240 V IEBO –1 A hFE VCE=–10V, IC=–0.7A PC 20(Tc=25°C) W VCE(sat) IC=–0.7A, IB=–70mA –1.0max V Tj 150 °C fT VCE=–12V, IE=0.7A 60typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 30typ pF 13.0min Tstg 3.9 IB 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) –20 20 –1 –10 5 –100 100 0.5typ 1.0typ 0.5typ Weight : Approx 6.5g a. Part No. b. Lot No. tf (µs) –4 –6 –8 0 –2 –10 Collector-Emitter Voltage V C E (V) –5 –10 –50 –100 (V C E =–4V) 300 DC Cur rent Gain h FE 125˚C Typ 100 –1 25˚C 100 –30˚C 50 –0.01 –2 f T – I E Characteristics (Typical) p) eTem (Cas –1 –0.1 –0.5 –1 –2 7 5 1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) Collector Current I C (A) 25˚C –0.5 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –500 –1000 Base Current I B (mA) h FE – I C Characteristics (Typical) 50 –0.01 mp) –1A θ j - a (˚ C/W) –2 0 I C =–2A –0.5A Transient Thermal Resistance 0 –1 –1 eTe I B =–5mA Cas –1 –2 ˚C ( –10 mA (V C E =–4V) –2 –3 125 5mA I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) A A 0m –3 0m 00 –1 –6 m A –2 –1 B C E V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 VCC (V) Collector Current I C (A) 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 20 –5 nk Collector Cur rent I C (A) si Collector-Emitter Voltage V C E (V) 10 at 2 –50 –100 –200 he –10 ite 1 –5 fin –0.01 –1 Without Heatsink Natural Cooling 1.2SA1859 2.2SA1859A In –0.5 ith –0.1 W 2 s 1 s Emitter Current I E (A) 0.5 0m 0.1 C –0.5 20 0.05 ms 40 10 60 0 0.01 D –1 Typ 1m 10 80 M aximum Po wer Dissipat io n P C (W) 100 Cut -off Fre quen cy f T ( MH Z ) DC Curr ent Gain h F E ø3.3±0.2 a b p) V aseTem V –6 4.2±0.2 2.8 c0.5 –30˚C (C –180 VEBO 10.1±0.2 µA –10max ICBO 4.0±0.2 –150 V External Dimensions FM20(TO220F) Unit 0.8±0.2 VCEO –180 Conditions 8.4±0.2 –150 Symbol 16.9±0.3 VCBO Unit (Ta=25°C) Ratings 2SA1859 2SA1859A ±0.2 sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SA1859 2SA1859A Application : Audio Output Driver and TV Velocity-modulation 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 33
- 36. 2SA1860 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC4886) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics Unit µA V IEBO VEB=–5V –100max µA IC=–25mA –150min V VEBO –5 V V(BR)CEO IC –14 A hFE A VCE(sat) 80(Tc=25°C) W fT 150 °C COB –55 to +150 °C –2.0max MHz 400typ pF ø3.3±0.2 a b V 50typ VCB=–10V, f=1MHz –3 PC IC=–5A, IB=–500mA VCE=–12V, IE=2A IB Tstg 50min∗ VCE=–4V, IC=–5A ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.75 1.05 +0.2 -0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 12 –5 –10 5 –500 500 0.25typ 0.85typ 0.2typ 1.5 Weight : Approx 6.5g a. Part No. b. Lot No. –1 –2 –3 –4 0 0 –0.2 –0.4 Collector-Emitter Voltage V C E (V) –0.6 –0.8 (V C E =–4V) 200 200 Typ 50 –0.5 –1 –5 Transient Thermal Resistance DC Cur rent Gain h FE 125˚C –0.1 25˚C 100 –30˚C 50 30 –0.02 –10 –14 –0.1 –0.5 f T – I E Characteristics (Typical) p) emp ) p) Cas eT Tem Tem ˚C ( se –1 –2 –1 –5 θ j-a – t Characteristics –10 –14 3 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) ase 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 20 –0.02 0 –1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 100 (Ca –5A θ j- a ( ˚C/W) 0 –5 I C =–10A –30 I B =–20mA –1 C (C –50mA –5 –10 25˚ –100 mA –2 ˚C –1 50 m A (V C E =–4V) 125 mA E –14 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) 00 –7 –200 C 3.35 I C – V BE Temperature Characteristics (Typical) –3 A m mA mA mA 00 500 400 00 – –3 –6 – –10 0 B V CE ( sat ) – I B Characteristics (Typical) mA –14 Collector Current I C (A) 4.4 tf (µs) –60 0.65 +0.2 -0.1 5.45±0.1 1.5 I C – V CE Characteristics (Typical) 0.8 2.15 5.45±0.1 sTypical Switching Characteristics (Common Emitter) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 80 –40 10 –10 si nk Collect or Cur ren t I C (A) 40 at Without Heatsink Natural Cooling he –0.5 ite –1 60 fin 20 s –5 In 40 C s s ith Typ m W D 60 10 0m 1m M aximum Power Dissipa ti on P C (W) 80 Cu t-off Fre quen cy f T (M H Z ) DC Cur rent Gain h FE 3.45 ±0.2 3.0 –150 5.5±0.2 3.3 VCEO 15.6±0.2 5.5 –100max V 1.6 VCB=–150V –150 9.5±0.2 ICBO VCBO Symbol 23.0±0.3 Ratings Unit Tj External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Ratings 16.2 Symbol Application : Audio and General Purpose 0.8±0.2 LAPT 20 –0.1 0 0.02 0.1 1 Emitter Current I E (A) 34 10 –0.05 –2 Without Heatsink –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 37. 2SA1907 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC5099) V VCEO –80 VEBO IC Unit µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–50mA –80min V –6 A hFE 15.6±0.2 50min∗ VCE=–4V, IC=–2A VCE(sat) IC=–12A, IB=–0.2A –0.5max V W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tj Tstg 3.0 A 60(Tc=25°C) 3.3 –3 PC IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ 4.4 V CE ( sa t ) – I B Characteristics (Typical) Weight : Approx 6.5g a. Part No. b. Lot No. 0 –1 0 –2 –3 –4 0 –0.5 –1.0 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) DC Cur rent Gain h FE Typ 100 50 –1 125˚C 25˚C –30˚C 100 50 30 –0.02 –5 –6 p) ) Tem 0 –1 –0.1 Collector Current I C (A) –0.5 θ j-a – t Characteristics –1 –5 –6 5 1 0.5 0.3 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) –1.5 Base-Emittor Voltage V B E (V) 300 –0.5 0 –1.5 (V C E =–4V) 300 emp –2A 0 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 se I C =–6A –4A Collector-Emitter Voltage V C E (V) 30 –0.02 –2 –30˚C I B =–10mA –1 –1 se T –20mA –2 (Ca –30mA –4 (Ca –3 –2 ˚C –50mA 25˚C Collector Current I C (A) –4 (V CE =–4V) 125 A –8 0m A Collector Current I C (A) –1 00 m –5 E –6 –3 A θ j- a ( ˚C/W) –1 m 50 C I C – V BE Temperature Characteristics (Typical) Transient Thermal Resistance 0 A Collector-Emitter Saturation Voltage V C E (s at) (V ) –2 0m B 3.35 1.5 tf (µs) –30 0.65 +0.2 -0.1 5.45±0.1 1.5 RL (Ω) –6 0.8 2.15 1.05 +0.2 -0.1 VCC (V) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 60 –10 DC 0m s ms s he at si nk Without Heatsink Natural Cooling ite –0.5 fin –1 40 In 10 –5 10 ith 20 1m 10 W Collecto r Cur rent I C ( A) Typ Ma xim um Powe r Dissipation P C (W) –20 30 Cu t-of f Fr eque ncy f T ( MH Z ) DC Curr ent Gain h F E 1.75 5.45±0.1 sTypical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 3.45 ±0.2 ø3.3±0.2 a b 16.2 IB 5.5±0.2 5.5 –10max 9.5±0.2 VCB=–80V 23.0±0.3 ICBO mp) –80 Ratings e Te VCBO External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol 0.8±0.2 Unit 1.6 sElectrical Characteristics (Ta=25°C) Ratings Symbol (Cas sAbsolute maximum ratings Application : Audio and General Purpose 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 5 6 –0.1 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 35
- 38. 2SA1908 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC5100) Application : Audio and General Purpose Symbol External Dimensions FM100(TO3PF) (Ta=25°C) Unit VCB=–120V –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO –8 A hFE V VCEO –120 VEBO IC –120min IC=–50mA VCE=–4V, IC=–3A 15.6±0.2 V 23.0±0.3 –120 50min∗ IC=–3A, IB=–0.3A –0.5max V W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 300typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tj Tstg 3.0 A 75(Tc=25°C) 3.3 –3 PC 1.75 1.05 +0.2 -0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 10 –4 –10 5 –0.4 0.4 0.14typ 1.40typ 0.21typ 4.4 V CE ( sat ) – I B Characteristics (Typical) 0 –1 –2 –3 –4 0 0 –0.2 –0.4 –0.6 –0.8 0 –1.0 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 300 DC Curr ent Gain h FE Typ 100 50 –1 125˚C 25˚C 100 –30˚C 50 30 –0.02 –5 –8 Transient Thermal Resistance 200 mp) e Te mp) –0.5 –0.5 4 1 0.5 –1 –5 –8 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) –1.5 θ j-a – t Characteristics 0.2 –0.1 Collector Current I C (A) –1.0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 mp) –4A –2A Collector-Emitter Voltage V C E (V) 30 –0.02 e Te –2 I C =–8A (Cas I B =–10mA –1 –30˚C –2 –4 e Te –25mA –6 Cas –50mA –4 –2 (Cas –7 5m A –6 ˚C ( mA 125 –100 (V C E =–4V) –8 Collector Current I C (A) A θ j - a (˚C/W) –1 m 50 Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 50 Collector Current I C (A) –3 –2 A E I C – V BE Temperature Characteristics (Typical) –3 m 00 C Weight : Approx 6.5g a. Part No. b. Lot No. 25˚C –8 0 B 3.35 1.5 tf (µs) –40 0.65 +0.2 -0.1 5.45±0.1 1.5 VCC (V) I C – V CE Characteristics (Typical) 0.8 2.15 5.45±0.1 sTypical Switching Characteristics (Common Emitter) DC Curr ent Gain h FE 3.45 ±0.2 ø3.3±0.2 a b 16.2 IB VCE(sat) 5.5±0.2 5.5 ICBO VCBO 1.6 Ratings Unit 9.5±0.2 Conditions Ratings Symbol 0.8±0.2 sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 80 –10 Typ –10 –50 –100 –150 Collector-Emitter Voltage V C E (V) Collector Curr ent I C (A) nk –0.1 –5 si 36 8 40 at Emitter Current I E (A) 5 Without Heatsink Natural Cooling he 1 –0.5 ite 0.5 –1 60 fin 0.05 0.1 s In 10 m s ith 20 0 0.02 DC –5 10 0m W Cut-o ff Fr eque ncy f T ( MH Z ) 10 Ma xim um Powe r Dissipat io n P C (W) –20 30 20 3.5 0 Without Heatsink 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150
- 39. 2SA1909 Silicon PNP EpitaxialPlanar Transistor (Complement to type 2SC5101) sElectrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF) (Ta=25°C) ICBO VCB=–140V –10max µA V IEBO VEB=–6V –10max µA VCBO –140 V VCEO –140 VEBO –6 V V(BR)CEO IC –10 A hFE –140min IC=–50mA VCE=–4V, IC=–3A 15.6±0.2 V 50min∗ VCE(sat) IC=–5A, IB=–0.5A –0.5max V W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 400typ pF –55 to +150 °C Tj Tstg 3.0 A 80(Tc=25°C) ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.75 1.05 +0.2 -0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 12 –5 –10 5 –0.5 0.5 0.17typ 1.86typ 0.27typ 4.4 V CE ( sat ) – I B Characteristics (Typical) –2 I B =–10mA –1 0 –2 –3 –4 –2 I C =–10A –5A 0 0 –0.5 Collector-Emitter Voltage V C E (V) –1.0 –1.5 (V C E =–4V) 200 50 –1 –5 125˚C 100 25˚C –30˚C 50 20 –0.02 –10 Transient Thermal Resistance D C Cur r ent Gai n h F E Typ 100 –0.1 –0.5 f T – I E Characteristics (Typical) –1.5 –1 –5 –10 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) Collector Current I C (A) ) –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 30 –0.02 –4 Temp –1 (Case –25mA –30˚C –4 –6 p) –50mA –2 mp) –7 5m A –6 –8 Tem mA se Collector Current I C (A) –100 (Ca A (Cas 0m ˚C –15 –8 (V C E =–4V) –10 25˚C A 125 –2 m 00 Collector Current I C (A) A θ j - a (˚C /W) –3 m 00 Collector-Emitter Saturation Voltage V C E (s at) (V) –4 A E I C – V BE Temperature Characteristics (Typical) –3 m 00 C Weight : Approx 6.0g a. Part No. b. Lot No. e Te –10 0 B 3.35 1.5 tf (µs) –60 0.65 +0.2 -0.1 5.45±0.1 1.5 I C – V CE Characteristics (Typical) 0.8 2.15 5.45±0.1 sTypical Switching Characteristics (Common Emitter) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 80 he 40 at si nk Collector Curr ent I C (A) ite Without Heatsink Natural Cooling fin –0.5 In –1 60 ith s C W D 0m 10 –5 ms Typ 10 20 10 –10 M aximum Po wer Dissipation P C (W) –30 30 Cu t-of f Fr eque ncy f T (MH Z ) DC Curr ent Gain h FE 3.45 ±0.2 3.3 –4 PC 5.5±0.2 ø3.3±0.2 a b 16.2 IB 0.8±0.2 Unit Symbol 5.5 Ratings Unit 1.6 Conditions Ratings 23.0±0.3 Symbol 9.5±0.2 sAbsolute maximum ratings Application : Audio and General Purpose 20 Without Heatsink 0 0.02 0.1 1 Emitter Current I E (A) 10 –0.1 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 37
- 40. 2SA2042 Silicon PNP EpitaxialPlanar Transistor −50 V ICBO VCEO −50 V IEBO VEBO −6 V V(BR)CEO IC （pulse−20） −10 A hFE IB −3 A VCB＝−50V −10max 10.1±0.2 µA VEB＝−6V −10max µA IC＝−25mA −50min V VCE＝−2V, IC＝−1A 130∼310 VCE(sat) IC＝−5A, IB＝−0.1A −0.5max VCE＝−12V, IE＝0.5A 60typ VCB＝−10V, f＝1MHz 375typ 30(Tc＝25°C) W fT Tj 150 °C COB −55 to ＋150 V °C MHz pF 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) 2.4±0.2 2.2±0.2 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –20 4 –5 –10 5 –100 100 0.2typ 0.7typ 0.1typ 38 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b 3.9 PC Tstg External Dimensions FM20(TO220F) Unit 4.0±0.2 VCBO (Ta=25°C) Ratings Conditions 0.8±0.2 Symbol ±0.2 sElectrical Characteristics Unit 8.4±0.2 (Ta=25°C) Ratings 16.9±0.3 Symbol 13.0min sAbsolute maximum ratings Application : Audio and General Purpose B C E Weight : Approx 6.5g a. Part No. b. Lot No.
- 41. (2 k Ω)(65 0Ω) E 2SB1257 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) ICBO IEBO V(BR)CEO –4(Pulse–6) A IC VEB=–6V –10max µA IC=–10mA –60min V hFE VCE=–4V, IC=–3A 2000min IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 25(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max 150 °C fT VCE=–12V, IE=0.2A 150typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 75typ pF Tstg 3.3 3.0 V IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 10 –3 –10 5 –10 10 0.4typ 0.8typ 16.2 0.6typ –1 0 –1 –2 –3 –4 –5 –2A –0.5 Collector-Emitter Voltage V C E (V) –1 –5 –10 0 –50 h FE – I C Temperature Characteristics (Typical) (V C E =–2V) 8000 DC Cur r ent Gai n h F E 1000 500 100 1000 12 5˚C 25 500 ˚C –3 0˚C 100 50 50 –0.5 –1 20 –0.02 –5 –6 –0.05 –0.1 Collector Current I C (A) –0.5 –1 –5 –6 1 0.7 Safe Operating Area (Single Pulse) 1m nk Co lle ctor Cu rre nt I C ( A) si 4 2 at 1 Emitter Current I E (A) 0x he –0.1 –0.07 –3 1 00x 1 0 10 ite Without Heatsink Natural Cooling 40 150x150x2 fin –0.5 20 In –1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm ith 80 1000 W 120 s 160 DC m Typ s 10 200 100 25 –5 0.5 10 P c – T a Derating –10 0.1 1 Time t(ms) (V C E =–12V) 240 0 0.05 5 Collector Current I C (A) f T – I E Characteristics (Typical) –2 –2.2 θ j-a – t Characteristics Transient Thermal Resistance 5000 Typ –0.1 –1 Base-Emittor Voltage V B E (V) (V C E =–2V) 20 –0.02 0 Base Current I B (mA) h FE – I C Characteristics (Typical) 8000 5000 mp) –1 I C =–1A –0.6 –0.2 –6 –2 (Case –1 θ j - a (˚ C/W) 0 –3A –3 25˚C –2 –2 e Te –0.8mA –3 (V C E =–2V) (Cas =– –1.0mA E –4 –3 Maxim um Power Dissipation P C (W) Collector Current I C (A) –1.2 mA –4 C 3.35 Weight : Approx 2.0g a. Part No. b. Lot No. 125˚C –1 .5 m A IB –5 0.65 +0.2 -0.1 1.5 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) mA 2. 3m – 1 .8 B V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A –6 DC Cur r ent Gai n h F E 4.4 tf (µs) –30 +0.2 -0.1 5.45±0.1 1.5 RL (Ω) 0.8 2.15 1.05 VCC (V) Cut- off F req uency f T (M H Z ) 1.75 5.45±0.1 sTypical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 3.45 ±0.2 ø3.3±0.2 a b V Tj 5.5±0.2 ) V 15.6±0.2 ) V –6 µA Temp –60 VEBO –10max Temp VCEO VCB=–60V (Case V Unit –30˚C –60 Ratings 0.8±0.2 VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions Symbol 5.5 Unit 1.6 Ratings 23.0±0.3 Symbol C Application : Driver for Solenoid, Relay and Motor and General Purpose sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) B Equivalent circuit 9.5±0.2 Darlington 50x50x2 Without Heatsink 2 –5 –10 Collector-Emitter Voltage V C E (V) –70 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 39
- 42. (3 k Ω)(10 0Ω) E 2SB1258 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785) IEBO V(BR)CEO A µA –100min hFE VCE=–2V, IC=–3A 1000min V IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max Tj 150 °C fT VCE=–12V, IE=0.2A 100typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 100typ pF V 3.9 V 13.0min Tstg 5 –2.0 mA –1 .8 m A IB –5 Collector Current I C (A) –1.2 mA –4 –0.9mA –3 –2 –1 0 0 –1 –2 –3 –4 –5 –5 –2 8000 –4A –1 –10 0 –100 –200 0 –1 8000 500 –1 12 5˚C ˚C 25 500 –3 0˚C 100 30 –0.03 –6 –0.1 Collector Current I C (A) θ j-a – t Characteristics 5 Transient Thermal Resistance DC Curr ent Gain h FE 5000 1000 –0.5 –1 –6 1 0.5 1 10 Safe Operating Area (Single Pulse) 30 –20 s s 150x150x2 ite he 100x100x2 at si 10 nk –0.1 fin 20 In Without Heatsink Natural Cooling 20 ith –1 –0.5 Natural Cooling Silicone Grease Heatsink: Aluminum in mm W Collector Cur rent I C (A) 0µ s 0µ s 40 m 60 DC 50 10 –5 80 1m 100 10 –10 Ma xim um Powe r Dissipation P C (W) Typ 1000 P c – T a Derating (V C E =–12V) 120 100 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) –2 –2.2 Base-Emittor Voltage V B E (V) (V C E =–4V) Typ 1000 Cu t-off Fr eque ncy f T ( MH Z ) –2 I C =–2A –1 h FE – I C Temperature Characteristics (Typical) 5000 –0.5 –3 –6A (V C E =–4V) –0.1 –4 Base Current I B (mA) h FE – I C Characteristics (Typical) 80 –0.03 (V C E =–4V) –6 –0.6 –0.5 –1 –6 I C – V BE Temperature Characteristics (Typical) –3 Collector-Emitter Voltage V C E (V) DC Curr ent Gain h FE 0.5typ mp) mA =– 3. – 4 2. 1.6typ B C E V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 4m A –6 0.6typ 6 –6 I C – V CE Characteristics (Typical) 2.4±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) e Te –10 tstg (µs) (Cas –3 ton (µs) IB2 (mA) IB1 (mA) 125˚C 10 –30 VBB2 (V) VBB1 (V) Collector Current I C (A) IC (A) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 θ j- a ( ˚ C/ W) RL (Ω) 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b ) –6(Pulse–10) IC –10max VEB=–6V IC=–10mA 4.2±0.2 2.8 c0.5 Temp V 10.1±0.2 ) V –6 µA (Case –100 VEBO –10max –30˚C VCEO VCB=–100V 4.0±0.2 ICBO Unit 0.8±0.2 V Ratings Temp –100 External Dimensions FM20(TO220F) (Ta=25°C) Conditions (Case VCBO Symbol 25˚C Unit ±0.2 sElectrical Characteristics Ratings Symbol 50x50x2 Without Heatsink 2 0 0.05 0.1 0.5 1 Emitter Current I E (A) 40 5 6 C 8.4±0.2 sAbsolute maximum ratings (Ta=25°C) B Equivalent circuit Application : Driver for Solenoid, Relay and Motor and General Purpose 16.9±0.3 Darlington –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 43. (3 k Ω)(10 0Ω) E 2SB1259 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081) –120 V ICBO VCEO –120 V IEBO VEBO –6 V V(BR)CEO –10(Pulse–15) A hFE Unit VCB=–120V –10max µA –10max mA VEB=–6V IC=–10mA –120min VCE=–4V, IC=–5A 10.1±0.2 2000min V IB –1 A VCE(sat) IC=–5A, IB=–10mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–5A, IB=–10mA –2.0max 150 °C fT VCE=–12V, IE=0.2A 100typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 145typ pF 3.9 V 13.0min 1.35±0.15 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –30 10 –3 –10 5 –6 6 0.6typ 1.6typ 0.5typ 0 –1 –2 –3 –4 –5 –2 0 –0.2 –6 –1 Collector-Emitter Voltage V C E (V) –10 –100 (V C E =–4V) 20000 10000 D C Cur r ent Gai n h F E Typ 5000 1000 500 100 5000 12 1000 5˚C ˚C 25 500 –3 0˚C 100 50 –0.5 –1 –5 20 –0.02 –10 –0.1 Collector Current I C (A) –0.5 –1 –5 –10 0.3 100x100x2 ) Temp at si 10 nk M aximu m Power Dissipat io n P C (W) he 10 150x150x2 ite 5 fin 1 In Without Heatsink Natural Cooling ith –0.5 20 W Co lle ctor Cu rren t I C (A) s s Cut- off F req uency f T (MH Z ) 0µ s m –1 50x50x2 Without Heatsink –0.05 0.5 1000 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 10 1m 10 DC –0.03 –3 100 P c – T a Derating –0.1 Emitter Current I E (A) 10 30 –10 –5 0.1 1 Time t(ms) –20 100 (Case 0.5 Safe Operating Area (Single Pulse) Typ mp) 1 (V C E =–12V) 200 –2 –2.2 5 Collector Current I C (A) f T – I E Characteristics (Typical) 0 0.05 –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 20000 –0.1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 50 –0.03 0 –1000 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 –4 –1A θ j - a (˚C /W) 0 –5A –1 –30˚C –5 I C =–10A –6 e Te I B =–1mA –2 ) –2mA –8 Temp –10 A (V C E =–4V) (Case A –3m –10 125˚C –5m –3 Collector Current I C (A) A Transient Thermal Resistance – m 10 B C E I C – V BE Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0m Collector Current I C (A) –5 –2 A Weight : Approx 2.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) –15 0m 2.4±0.2 2.2±0.2 VCC (V) I C – V CE Characteristics (Typical) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 (Cas Tstg D C Cur r ent Gai n h F E ø3.3±0.2 a b V Tj 4.2±0.2 2.8 c0.5 25˚C IC Ratings 4.0±0.2 VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions Symbol 0.8±0.2 Unit ±0.2 sElectrical Characteristics (Ta=25°C) Ratings Symbol C 8.4±0.2 sAbsolute maximum ratings B Equivalent circuit Application : Driver for Solenoid, Relay and Motor and General Purpose 16.9±0.3 Darlington 2 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 41
- 44. (2 k Ω)(10 0Ω) E 2SB1351 Silicon PNP Epitaxial Planar Transistor V(BR)CEO hFE mA –60min V VCE=–4V, IC=–10A 2000min IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max V Tj 150 °C fT VCE=–12V, IE=1A 130typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 170typ pF 3.9 V 13.0min 1.35±0.15 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) –5 0 –1 –2 –3 –4 –5 I C =–10A –5A –1 –1A –5 0 –0.1 –6 –1 Collector-Emitter Voltage V C E (V) –10 h FE – I C Temperature Characteristics (Typical) 20000 (V C E =–4V) 20000 DC Cur rent Gain h FE 10000 Typ 5000 –1 –5 –10 –20 12 C 25 ˚C –30 ˚C 1000 500 –0.3 –0.5 –1 –1 –5 –10 –20 1 0.5 0.3 1 10 P c – T a Derating he 100x100x2 at si 10 nk –0.1 150x150x2 ite 40 fin Without Heatsink Natural Cooling In –0.5 20 ith –1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm W Ma ximum Po we r Dissipatio n P C (W) s DC –5 s Collecto r Cur ren t I C (A) 1m m 80 10 –10 120 1000 30 –30 Typ 100 Time t(ms) Safe Operating Area (Single Pulse) 160 –2.4 θ j-a – t Characteristics (V C E =–12V) 200 –2 5 Collector Current I C (A) f T – I E Characteristics (Typical) Cut-o ff F requ ency f T (MH Z ) 5˚ 5000 Collector Current I C (A) 240 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 1000 800 –0.3 0 –100 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 –10 mp) I B =–1mA –15 ) –10 –2 emp –2m A (V C E =–4V) –20 –3 eT Collector Current I C (A) –3 mA I C – V BE Temperature Characteristics (Typical) ˚C ( –4 m A –15 0 0.6typ 125 A –1 0m A –6m 1.5typ B C E Collector Current I C (A) –20 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V CE Characteristics (Typical) 0.7typ 20 –20 tstg (µs) Cas 5 –10 –10 ton (µs) IB2 (mA) IB1 (mA) θ j- a ( ˚C/W) 4 –40 VBB2 (V) VBB1 (V) IC (A) 2.4±0.2 2.2±0.2 Transient Thermal Resistance RL (Ω) VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 e Te Tstg DC Cur rent Gain h FE ø3.3±0.2 a b (Cas A –10max –30˚C –12(Pulse–20) VEB=–6V IC=–10mA 4.0±0.2 IEBO V 4.2±0.2 2.8 c0.5 ) V –6 10.1±0.2 emp –60 VEBO µA se T VCEO –10max 0.8±0.2 ICBO (Ca V Unit 25˚C –60 Ratings VCB=–60V VCBO External Dimensions FM20(TO220F) (Ta=25°C) Condition Symbol Unit IC C ±0.2 sElectrical Characteristics Ratings Symbol Equivalent circuit 8.4±0.2 sAbsolute maximum ratings (Ta=25°C) B Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose 16.9±0.3 Darlington 50x50x2 Without Heatsink 2 0 0.05 0.1 0.5 1 Emitter Current I E (A) 42 5 10 20 –0.05 –2 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 45. (2 k Ω)(10 0Ω) E 2SB1352 Silicon PNP Epitaxial Planar Transistor –60 V ICBO VCEO –60 V IEBO VEBO –6 V V(BR)CEO –12(Pulse–20) A hFE Symbol External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Conditions Unit VCB=–60V –10max 15.6±0.2 µA VEB=–6V –10max mA IC=–10mA –60min V VCE=–4V, IC=–10A 2000min IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max PC 60(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max 150 °C fT VCE=–12V, IE=1A 130typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 170typ pF 3.0 3.3 16.2 1.05 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 4 –10 –10 5 –20 20 0.7typ 1.5typ 0.6typ –4 –5 0 –0.1 –1 –10 h FE – I C Temperature Characteristics (Typical) 20000 (V C E =–4V) 20000 DC Cur rent Gain h FE 10000 Typ 5000 –5 –10 –20 12 5˚ C 25 5000 ˚C –30 ˚C 1000 500 –0.3 –0.5 –1 Collector Current I C (A) –5 –10 –20 0.3 ) mp) emp e Te at si 20 nk Collecto r Cur ren t I C (A) he 20 ite 10 fin Without Heatsink Natural Cooling 40 In –0.5 –0.1 5 1000 ith –1 –0.05 –2 100 W Ma ximum Po we r Dissipatio n P C (W) s s –5 40 1 10 P c – T a Derating m 80 0.5 1 Time t(ms) 1m DC 10 120 (Cas 0.5 60 –10 Emitter Current I E (A) ) 1 –30 Typ –2.4 θ j-a – t Characteristics Safe Operating Area (Single Pulse) 160 –2 5 (V C E =–12V) 200 0 0.05 0.1 –1 Collector Current I C (A) f T – I E Characteristics (Typical) 240 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –1 0 –100 Base Current I B (mA) h FE – I C Characteristics (Typical) 1000 800 –0.3 emp –5 Collector-Emitter Voltage V C E (V) 10000 eT –1A –6 se T –5A –1 –10 θ j- a ( ˚C/W) –3 I C =–10A –15 (Ca –5 –2 (V C E =–4V) Cas –1mA –2 –20 ˚C ( –10 –1 –3 25˚C =– IB Collector Current I C (A) –3 mA –2m A 0 E 125 –4 m A –15 0 C 3.35 Weight : Approx 6.5g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) A 10 m A –6m B Transient Thermal Resistance –20 0.65 +0.2 -0.1 1.5 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V CE Characteristics (Typical) DC Cur rent Gain h FE 4.4 tf (µs) –40 +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 5.45±0.1 sTypical Switching Characteristics (Common Emitter) Cut-o ff F requ ency f T (MH Z ) 1.75 –30˚C Tstg 3.45 ±0.2 ø3.3±0.2 a b V Tj V 5.5±0.2 5.5 VCBO IC C 1.6 Unit 0.8±0.2 sElectrical Characteristics (Ta=25°C) Ratings Symbol Equivalent circuit 9.5±0.2 sAbsolute maximum ratings B Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose 23.0±0.3 Darlington Without Heatsink –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 3.5 0 0 50 100 150 Ambient Temperature Ta(˚C) 43
- 46. (2 k Ω)(80Ω) E 2SB1382 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082) sElectrical Characteristics –120 V ICBO VCEO –120 V IEBO VEBO –6 V V(BR)CEO –16(Pulse–26) A hFE Unit VCB=–120V –10max µA –10max mA VEB=–6V IC=–10mA –120min VCE=–4V, IC=–8A 15.6±0.2 2000min V IB –1 A VCE(sat) IC=–8A, IB=–16mA –1.5max PC 75(Tc=25°C) W VBE(sat) IC=–8A, IB=–16mA –2.5max 150 °C fT VCE=–12V, IE=1A 50typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 350typ pF 3.0 3.3 1.05 +0.2 -0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 5 –8 –10 5 –16 16 0.8typ 1.8typ 1.0typ –1 –2 –3 –4 –5 –16 0 –0.5 –6 –1 Collector-Emitter Voltage V C E (V) –10 (V C E =–4V) Typ 5000 1000 –5 –10 –16 10000 12 Transient Thermal Resistance D C Cur r ent Gai n h F E 20000 10000 5˚C 5000 25 ˚C – ˚C 30 1000 500 –0.3 –0.5 –1 f T – I E Characteristics (Typical) –5 –10 –16 s 0µ s s DC –5 ) emp nk 16 40 si Without Heatsink Natural Cooling at –1 –0.5 60 he M aximu m Power Dissipat io n P C (W) m 10 ite Co lle ctor Cu rren t I C (A) 1m fin 10 mp) P c – T a Derating In 5 1000 80 10 –0.05 –0.03 –3 e Te 100 ith 1 10 W 0.5 1 Time t(ms) –0.1 Emitter Current I E (A) p) 0.2 –50 –10 44 0.5 Safe Operating Area (Single Pulse) Typ 0 0.05 0.1 –2.4 1 (V C E =–12V) 50 –2 3 Collector Current I C (A) Collector Current I C (A) 100 –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 20000 –1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –100 Base Current I B (mA) h FE – I C Characteristics (Typical) 500 –0.3 Tem –4 (Cas –4A –1 –8 se T –8A se I C =–16A –12 (Ca –2 (V C E =–4V) (Ca I B =–1.5m A 0 –3 ˚C –6 mA –3m A 0 E 25˚C A –12m –10 C 125 A Collector Current I C (A) – m 20 –20 Collector Current I C (A) Weight : Approx 6.5g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) θ j - a ( ˚ C/ W) –4 0m A –26 B 3.35 1.5 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V CE Characteristics (Typical) D C Cur r ent Gai n h F E 4.4 tf (µs) –40 0.65 +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 5.45±0.1 sTypical Switching Characteristics (Common Emitter) Cut- off F req uency f T (MH Z ) 1.75 16.2 Tstg 3.45 ±0.2 ø3.3±0.2 a b V Tj V 5.5±0.2 –30˚C IC Ratings 0.8±0.2 VCBO External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol 5.5 Unit C 1.6 Ratings Symbol Equivalent circuit 9.5±0.2 sAbsolute maximum ratings (Ta=25°C) B Application : Chopper Regulator, DC Motor Driver and General Purpose 23.0±0.3 Darlington 20 Without Heatsink –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 50 100 Ambient Temperature Ta(˚C) 150
- 47. (2 k Ω)(80Ω) E 2SB1383 Darlington Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083) sAbsolute maximum ratings (Ta=25°C) Ratings VCBO –120 V VCEO –120 Unit –10max µA V IEBO VEB=–6V –10max mA 2000min VCE(sat) IC=–12A, IB=–24mA –1.8max VBE(sat) IC=–12A, IB=–24mA –2.5max V VCE=–12V, IE=1A 50typ MHz VCB=–10V, f=1MHz 230typ pF –2 A PC 120(Tc=25°C) W Tj 150 °C fT –55 to +150 °C COB V ø3.2±0.1 2 3 1.05 +0.2 -0.1 5.45±0.1 IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 2 –12 –10 5 –24 24 1.0typ 3.0typ C 1.0typ I B =–0.6mA –2 –3 –4 –5 0 –0.5 –1 –6 –10 Collector-Emitter Voltage V C E (V) –100 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 20000 Typ 5000 1000 500 –5 –10 –40 12 5000 5˚C 25 Transient Thermal Resistance 10000 10000 DC Cur rent Gain h FE 20000 –1 ˚C –30 ˚C 1000 500 200 –0.2 –0.5 Collector Current I C (A) –1 –5 –10 –40 ) emp ) em p) mp eT eT se 1 10 Cas ˚C ( 100 1000 P c – T a Derating 120 M aximum Power Dissipa ti on P C (W) Co lle ctor Cu rre nt I C (A) nk Collector-Emitter Voltage V C E (V) –200 si –100 at –50 he –10 ite –5 fin –0.2 –3 In Without Heatsink Natural Cooling ith –1 100 W –5 –0.5 10 s 10 s 20 1m 30 DC –10 m 40 10 Cut- off F req uency f T (MH Z ) Te 0.1 –50 Typ 5 Cas 0.5 Time t(ms) 50 Emitter Current I E (A) (Ca 1 –100 1 –2.6 2 Safe Operating Area (Single Pulse) 60 –2 θ j-a – t Characteristics (V C E =–12V) 0.5 –1 Collector Current I C (A) f T – I E Characteristics (Typical) 0 0.1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –500 Base Current I B (mA) h FE – I C Characteristics (Typical) 200 –0.2 –10 –5 θ j- a ( ˚ C/W) –1 –6A –30 –1.0mA –5 –12A –1 –15 C( –1.5mA –2 –20 25˚ –2.5m A I C =–25A (V C E =–4V) 5˚C –4 .0m A 0 –25 12 –20 0 –3 Collector Current I C (A) –6 .0 m A –10 I C – V BE Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –25 –15 Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) .0 1.4 E tf (µs) –24 0.65 +0.2 -0.1 5.45±0.1 B RL (Ω) –8 2.0±0.1 V VCC (V) mA 4.8±0.2 b sTypical Switching Characteristics (Common Emitter) Collector Current I C (A) a 4.0max hFE 20.0min V(BR)CEO 4.0 –120min V A 19.9±0.3 IC=–25mA VCE=–4V, IC=–12A –6 IB DC Cur rent Gain h FE 15.6±0.4 9.6 1.8 VCB=–120V 5.0±0.2 ICBO 2.0 Ratings –25(Pulse–40) Tstg C External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Symbol IC VEBO Equivalent circuit Application : Chopper Regulator, DC Motor Driver and General Purpose sElectrical Characteristics Unit Symbol B 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 45
- 48. (2 k Ω)(80Ω) E 2SB1420 Darlington Silicon PNP Epitaxial Planar Transistor sAbsolute maximum ratings C Application : Chopper Regulator, DC Motor Driver and General Purpose sElectrical Characteristics (Ta=25°C) B Equivalent circuit External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Ratings Unit VCBO –120 V ICBO VCB=–120V –10max µA VCEO –120 V IEBO VEB=–6V –10max mA –6 V V(BR)CEO –16(Pulse–26) A hFE Unit IC=–10mA –120min VCE=–4V, IC=–8A V –1 A VCE(sat) IC=–8A, IB=–16mA –1.5max PC 80(Tc=25°C) W VBE(sat) IC=–8A, IB=–16mA –2.5max 150 °C fT VCE=–12V, IE=1A 50typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 350typ pF V 20.0min 1.8 2 3 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 2 –12 –10 5 –24 24 1.0typ 3.0typ C Weight : Approx 6.0g a. Part No. b. Lot No. 1.0typ 0 0 –1 –2 –3 –4 –5 –4A –1 0 –0.5 –6 –1 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 10000 Typ 5000 1000 –10 –16 10000 12 5˚C 5000 25 ˚C 0 –3 ˚C 1000 500 –0.3 –0.5 f T – I E Characteristics (Typical) –1 –5 –10 –16 0.2 10 m 10 s 0µ s s DC 40 ) emp mp) at si nk Without Heatsink Natural Cooling he –1 –0.5 60 ite Collecto r Cur ren t I C (A) 1m –5 –0.05 –0.03 –3 e Te P c – T a Derating fin 16 1000 In 10 100 ith 5 se T 10 W Emitter Current I E (A ) 1 80 –10 1 p) 0.5 Time t(ms) –0.1 46 1 –50 0.5 –2.4 3 Safe Operating Area (Single Pulse) 50 –2 θ j-a – t Characteristics (V C E =–12V) Typ 0 0.05 0.1 –1 Collector Current I C (A) Collector Current I C (A) Cut-o ff F requ ency f T (MH Z ) Transient Thermal Resistance 20000 DC Cur rent Gain h F E 20000 100 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –5 0 –100 Base Current I B (mA) h FE – I C Characteristics (Typical) –1 Tem –4 Collector-Emitter Voltage V C E (V) 500 –0.3 –8 (Ca –8A (Cas I B =–1.5m A I C =–16A –12 se –3m A –2 (V CE =–4V) (Ca –6 mA –10 –16 M aximum Po we r Dissipatio n P C (W) Collector Current I C (A) –20 –3 25˚C A –12m ˚C A 125 m Collector Current I C (A) 0 –2 I C – V BE Temperature Characteristics (Typical) θ j - a (˚C /W ) –4 0m A –26 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) I C – V CE Characteristics (Typical) 1.4 E tf (µs) –24 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) DC Cur rent Gain h F E ø3.2±0.1 –30˚C Tstg 2.0±0.1 b V Tj a 4.8±0.2 5.0±0.2 2.0 2000min IB 15.6±0.4 9.6 4.0 IC Conditions 19.9±0.3 VEBO Symbol 4.0max Symbol 20 Without Heatsink –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 49. (7 0 Ω) E 2SB1559 Darlington Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389) sAbsolute maximum ratings (Ta=25°C) Equivalent circuit sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) –100max µA V IEBO VEB=–5V –100max µA –5 V V(BR)CEO IC=–30mA –150min V –8 A hFE VCE=–4V, IC=–6A 5000min∗ VCEO –150 VEBO IC 15.6±0.4 9.6 4.0 V 1.8 VCB=–160V –160 2.0 ICBO VCBO a 4.8±0.2 2.0±0.1 ø3.2±0.1 b IB –1 A VCE(sat) IC=–6A, IB=–6mA –2.5max PC 80(Tc=25°C) W VBE(sat) IC=–6A, IB=–6mA –3.0max V Tj 150 °C fT VCE=–12V, IE=1A 65typ MHz –55 to +150 °C VCB=–10V, f=1MHz 160typ pF V 2 4.0max 20.0min COB 5.0±0.2 Unit 19.9±0.3 Ratings Symbol Unit Tstg C Application : Audio, Series Regulator and General Purpose Conditions Ratings Symbol B 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 sTypical Switching Characteristics (Common Emitter) 5.45±0.1 B VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 10 –6 –10 5 –6 6 0.7typ 3.6typ Weight : Approx 6.0g a. Part No. b. Lot No. 0.9typ V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) 0 0 –2 –4 0 –0.2 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –5 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 40,000 50000 10,000 5,000 –1 –5 –8 Transient Thermal Resistance Typ DC Cur rent Gain h FE 25˚C 10000 –30˚C 5000 1000 –0.2 –1 –5 –8 1 5 10 C m s s ite he 40 at si nk –0.1 fin Without Heatsink Natural Cooling 20 In –1 –0.5 60 ith Collector Curre nt I C (A) D 10 0m W –5 40 500 1000 2000 80 –10 60 mp) 50 100 P c – T a Derating –20 Typ ) 10 Time t(ms) Safe Operating Area (Single Pulse) 80 e Te 0.5 (V C E =–12V) 100 –3 1 Collector Current I C (A) f T – I E Characteristics (Typical) –2 4 0.2 –0.5 Collector Current I C (A) Cas –1 θ j-a – t Characteristics M aximum Po wer Dissipation P C (W) DC C urrent G ain h FE 125˚C Cut -off Fre quen cy f T ( MH Z ) 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –50 –100 –200 Base Current I B (mA) h FE – I C Characteristics (Typical) 2,000 –0.2 p) –2 emp –1 –4 ˚C ( I C =–4A –30 –6A –6 Tem I B =–0.3mA –2 –8A se T –0.5m A –4 –2 se –0.8m A (Ca –1 .0 mA –6 (V C E =–4V) –8 –3 (Ca A – 1 .5 m –1. 3m A 25˚C A ˚C – 1 .8 m 125 mA θ j - a (˚ C/W) –2.0 Collector Current I C (A) .5 Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) –10 –8 –2 mA m A I C – V CE Characteristics (Typical) 1.4 E tf (µs) –60 C 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 5 8 –0.05 –2 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 47
- 50. (7 0 Ω) E 2SB1560 Darlington Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) sAbsolute maximum ratings Equivalent circuit C Application : Audio, Series Regulator and General Purpose sElectrical Characteristics (Ta=25°C) B External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V Symbol 15.6±0.4 9.6 V V(BR)CEO IC=–30mA –150min –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB –1 A VCE(sat) IC=–7A, IB=–7mA –2.5max PC 100(Tc=25°C) W VBE(sat) IC=–7A, IB=–7mA –3.0max V Tj 150 °C fr VCE=–12V, IE=2A 50typ MHz –55 to +150 °C VCB=–10V, f=1MHz 230typ pF COB a 4.8±0.2 2.0±0.1 ø3.2±0.1 b V 2 4.0max 20.0min Tstg 4.0 –5 IC 19.9±0.3 VEBO 1.8 Conditions V 5.0±0.2 Unit –160 2.0 Ratings VCBO Symbol 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 sTypical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 10 –7 –10 5 –7 7 0.8typ 3.0typ 0 0 –2 –4 –2 0 –0.2 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –5 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 50000 DC Curr ent Gain h F E 40,000 Typ 10,000 5,000 125˚C 10000 25˚C 5000 –30˚C 1000 –1 –5 –10 500 –0.2 –0.5 Collector Current I C (A) –1 –5 –10 0.1 1 5 ) 10 500 1000 2000 P c – T a Derating m s s ite he 50 at si nk Without Heatsink Natural Cooling fin –0.5 In –1 ith DC 10 0m Maxim um Power Dissipation P C (W) 10 –5 20 50 100 Time t(ms) W Co lle ctor Cu rre nt I C ( A) ) 0.5 100 –10 40 Temp 1 –30 80 –2.5 3 Safe Operating Area (Single Pulse) 100 –2 θ j-a – t Characteristics (V C E =–12V) Typ Temp –1 Collector Current I C (A) f T – I E Characteristics (Typical) 60 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –50 –100 –200 Base Current I B (mA) h FE – I C Characteristics (Typical) 1,000 –0.2 –4 (Case –2 –7A I C =–5A –1 –6 –30˚C I B =–0.4mA –10A mp) –4 –2 (Case –0.6m A –8 25˚C –0.8m A (V C E =–4V) e Te –1.0 mA Transient Thermal Resistance Collector Current I C (A) –1. 2mA –6 –10 (Cas –1 .5m A –8 –3 125˚C mA Collector Current I C (A) – 2 .0 I C – V BE Temperature Characteristics (Typical) θ j - a ( ˚ C/W) . Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at ) (V ) –2 –10 mA –10 A 5m 1.4 E 1.2typ I C – V CE Characteristics (Typical) DC Curr ent Gain h F E C tf (µs) –70 Cut- off F req uency f T (M H Z ) 5.45±0.1 B –0.1 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 48 5 10 –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 51. (7 0 Ω) E 2SB1570 Darlington Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) sAbsolute maximum ratings (Ta=25°C) Ratings V VCBO Conditions Ratings Unit –100max µA 24.4±0.2 VEB=–5V –100max µA –150min hFE VCE=–4V, IC=–7A 5000min∗ VCE(sat) IC=–7A, IB=–7mA –2.5max V W VBE(sat) IC=–7A, IB=–7mA –3.0max V 150 °C fT VCE=–12V, IE=2A 50typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 230typ pF A –1 A PC 150(Tc=25°C) Tj 9 7 –12 IB 2-ø3.2±0.1 21.4±0.3 V V(BR)CEO a b 2 4.0max IEBO 20.0min V –5 IC 3 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 10 –7 –10 5 –7 7 0.8typ 3.0typ C E Weight : Approx 18.4g a. Part No. b. Lot No. tf (µs) –70 1.2typ –2 0 0 –2 –4 0 –0.2 –6 –0.5 –1 –5 –10 h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 50000 10,000 5,000 –5 –10–12 Transient Thermal Resistance D C Cur r ent Gai n h F E 125˚C Typ –1 25˚C 10000 –30˚C 5000 1000 800 –0.2 –0.5 Collector Current I C (A) –1 –5 1 0.5 0.1 1 –10 –12 DC m s s he 80 at si nk Without Heatsink Natural Cooling ite –0.5 120 fin M aximu m Power Dissip ation P C (W) 0m 40 –0.1 1 Emitter Current I E (A) 5 10 2000 P c – T a Derating –1 –0.05 –3 500 1000 In Collecto r Cur rent I C (A) 10 10 –5 20 100 ith 40 0.5 50 W Typ 0.05 0.1 10 160 –10 Cut- off F re quen cy f T (MH Z ) 5 Time t(ms) –30 80 –2.5 θ j-a – t Characteristics Safe Operating Area (Single Pulse) 100 –2 2 (V C E =–12V) 0 0.02 –1 Collector Current I C (A) f T – I E Characteristics (Typical) 60 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –50 –100 –200 Base Current I B (mA) 40,000 1,000 –0.2 –4 –2 Collector-Emitter Voltage V C E (V) mp) Temp ) I C =–5A –1 –6 (Case I B =–0.4mA –7A –30˚C –4 –10A –8 mp) –0.6mA –2 e Te –0.8m A –10 (Cas –1.2m A –1.0 mA (V C E =–4V) e Te Collector Current I C (A) –1.5 mA –6 –12 25˚C –2 .0m A –10 –8 –3 (Cas –2 .0 m A 125˚C A Collector Current I C (A) m I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) 0 –1 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –12 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) D C Cur r ent Gai n h F E 2.1 V –150 VEBO Tstg 6.0±0.2 36.4±0.3 IC=–30mA VCEO C External Dimensions MT-200 (Ta=25°C) VCB=–160V Symbol ICBO Equivalent circuit Application : Audio, Series Regulator and General Purpose sElectrical Characteristics Unit –160 Symbol B –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 49
- 52. (7 0 Ω) E 2SB1587 Darlington Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438) sAbsolute maximum ratings Equivalent circuit External Dimensions FM100(TO3PF) (Ta=25°C) Unit Conditions Ratings Unit –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –150min V IC –8 A hFE VCE=–4V, IC=–6A 5000min∗ IB –1 A VCE(sat) IC=–6A, IB=–6mA –2.5max PC 75(Tc=25°C) W VBE(sat) IC=–6A, IB=–6mA –3.0max V Tj 150 °C fT VCE=–12V, IE=1A 65typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 160typ pF 9.5±0.2 23.0±0.3 IC (A) 10 –60 –6 5 –10 3.0 1.05 +0.2 -0.1 5.45±0.1 4.4 B 0.9typ 3.6typ 3.35 1.5 C Weight : Approx 6.5g a. Part No. b. Lot No. E I C – V BE Temperature Characteristics (Typical) 0 0 –2 –4 0 –0.2 –6 –0.5 –1 –5 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 40,000 50000 10,000 5,000 –1 –5 –8 Transient Thermal Resistance Typ DC C urrent G ain h FE 25˚C 10000 –30˚C 5000 1000 –0.2 –0.5 Collector Current I C (A) –1 –5 0.2 –8 C m s s –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 mp) nk 8 si 5 40 at –0.1 he Without Heatsink Natural Cooling 60 ite Collecto r Cur rent I C (A) D 10 0m –0.5 –0.05 –2 e Te P c – T a Derating –1 20 500 1000 fin 40 Cas 50 100 Time t(ms) In 60 50 10 ith Typ 1 5 W Cut- off F req uenc y f T (MH Z ) 10 –5 0.5 1 80 –10 Emitter Current I E (A) p) 0.5 –20 80 ) 1 Safe Operating Area (Single Pulse) 100 –3 4 (V C E =–12V) 0.1 –2 Collector Current I C (A) f T – I E Characteristics (Typical) 0.05 –1 θ j-a – t Characteristics M aximum Po wer Dissipat io n P C (W) DC Curr ent Gain h F E 125˚C 0 0.02 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –50 –100 –200 Base Current I B (mA) h FE – I C Characteristics (Typical) 2,000 –0.2 Tem –2 Collector-Emitter Voltage V C E (V) emp –1 –4 ˚C ( –2 –6A I C =–4A se T I B =–0.3mA –8A –6 –30 –0.5m A –4 –2 se –0.8m A (Ca –1 .0 mA –6 (V C E =–4V) –8 –3 (Ca A – 1 .5 m –1. 3m A 25˚C A ˚C – 1 .8 m 125 mA θ j- a ( ˚C/W) –2.0 Collector Current I C (A) .5 Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) –10 –8 –2 mA m A V CE ( sat ) – I B Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 tf (µs) tstg (µs) 0.7typ 6 –6 I C – V CE Characteristics (Typical) ton (µs) IB2 (mA) 0.8 2.15 1.5 IB1 (mA) VBB2 (V) VBB1 (V) 1.6 3.3 1.75 sTypical Switching Characteristics (Common Emitter) RL (Ω) 3.45 ±0.2 ø3.3±0.2 a b V ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) VCC (V) 5.5±0.2 5.5 15.6±0.2 16.2 Tstg Symbol 0.8±0.2 Ratings VCBO Symbol C Application : Audio, Series Regulator and General Purpose sElectrical Characteristics (Ta=25°C) B 20 3.5 0 Without Heatsink 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150 2000
- 53. (7 0 Ω) E 2SB1588 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439) sAbsolute maximum ratings External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Unit VCBO –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V Ratings Conditions Unit 15.6±0.2 V V(BR)CEO IC=–30mA –150min –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB –1 A VCE(sat) IC=–7A, IB=–7mA –2.5max PC 80(Tc=25°C) W VBE(sat) IC=–7A, IB=–7mA –3.0max V Tj 150 °C fT VCE=–12V, IE=2A 50typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 230typ pF ø3.3±0.2 a b 3.3 3.0 V 1.75 16.2 1.05 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 sTypical Switching Characteristics (Common Emitter) 5 –10 –3 I B =–0.4mA –2 0 0 –2 –4 –2 0 –0.2 –6 –0.5 –1 –5 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 50,000 DC Cur rent Gain h FE 40,000 Typ 10,000 5,000 125˚C 10,000 25˚C 5,000 –30˚C 1,000 –5 –10 500 –0.2 –0.5 Collector Current I C (A) –1 –5 –10 1 0.5 0.1 5 P c – T a Derating m s s DC si nk Without Heatsink Natural Cooling 40 at –0.5 he –1 60 ite Maxim um Power Dissip ation P C (W) 10 0m fin Co lle ctor Cu rre nt I C (A) 10 –5 20 20 –0.1 0.5 1 Emitter Current I E (A) 5 10 –0.05 –3 2000 In 40 500 1000 ith Typ 50 100 80 –10 0.05 0.1 10 W Cut -off Fre quen cy f T (M H Z ) 1 Time t(ms) –30 80 –2.5 3 Safe Operating Area (Single Pulse) 100 –2 θ j-a – t Characteristics (V C E =–12V) 0 0.02 –1 Collector Current I C (A) f T – I E Characteristics (Typical) 60 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –1 0 –50 –100 –200 Base Current I B (mA) h FE – I C Characteristics (Typical) –0.5 –4 ) –7A I C =–5A –1 –6 ) –10A Collector-Emitter Voltage V C E (V) 1,000 –0.2 –8 Temp –0.6m A –2 (V C E =–4V) Temp –0.8m A –10 (Case –1.0 mA I C – V BE Temperature Characteristics (Typical) Transient Thermal Resistance Collector Current I C (A) –1. 2mA –4 E (Case –1 .5m A –6 1.2typ C –30˚C mA –8 B (Cas – 2 .0 Collector-Emitter Saturation Voltage V C E (s a t) (V ) –2 A –10 mA –10 3.0typ Weight : Approx 6.5g a. Part No. b. Lot No. tf (µs) V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) m .5 0.8typ 7 –7 tstg (µs) mp) –7 ton (µs) IB2 (mA) IB1 (mA) 3.35 1.5 e Te 10 VBB2 (V) VBB1 (V) 4.4 125˚C IC (A) Collector Current I C (A) –70 RL (Ω) 0.65 +0.2 -0.1 5.45±0.1 1.5 θ j - a ( ˚C/W) VCC (V) 0.8 2.15 25˚C Tstg DC Cur rent Gain h FE 3.45 ±0.2 1.6 –5 IC 23.0±0.3 VEBO 5.5±0.2 5.5 Symbol 9.5±0.2 Symbol C Application : Audio, Series Regulator and General Purpose sElectrical Characteristics (Ta=25°C) Equivalent circuit 0.8±0.2 Darlington B –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 51
- 54. (7 0 Ω) E 2SB1647 Darlington Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) sAbsolute maximum ratings (Ta=25°C) Ratings VCBO –150 –150 Symbol V VCEO sElectrical Characteristics Unit VCB=–150V –100max µA V IEBO VEB=–5V –100max µA V –5 V V(BR)CEO –15 A hFE 15.6±0.4 9.6 –150min 5000min∗ A VCE(sat) IC=–10A, IB=–10mA –2.5max IC=–10A, IB=–10mA –3.0max 45typ MHz VCB=–10V, f=1MHz 320typ PC 130(Tc=25°C) W VBE(sat) Tj 150 °C fT –55 to +150 °C COB 4.0 a ø3.2±0.1 pF 2 3 1.05 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 4 10 –10 5 –10 10 0.7typ 1.6typ –3 –15 –0.5 –1 –10 10,000 5,000 –1 –5 –10 –15 25˚C –30˚C 10000 5000 1000 –0.2 –0.5 Collector Current I C (A) –1 –5 –10 –15 p) 1 mp) nk 52 10 e Te si Emitter Current I E (A) 5 Cas at Without Heatsink Natural Cooling he –0.5 ite –1 100 fin M aximum Po wer Dissipat io n P C (W) s In Collect or Cur ren t I C ( A) m s ith DC 10 0m 50 –0.1 1 1000 2000 P c – T a Derating –5 –0.05 –3 100 Time t(ms) W –10 0.5 ˚C ( 10 130 10 0.05 0.1 ) Tem 0.1 –50 20 emp 0.5 Safe Operating Area (Single Pulse) 40 –3 1 (V C E =–12V) 60 –2 3 Collector Current I C (A) f T – I E Characteristics (Typical) 0 0.02 –1 θ j-a – t Characteristics θ j- a ( ˚ C/ W) 125˚C Transient Thermal Resistance Typ –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 50000 1,000 –0.2 0 –50 –100 –200 h FE – I C Temperature Characteristics (Typical) DC C urrent G ain h FE DC C urrent G ain h FE –5 Base Current I B (mA) (V C E =–4V) 50,000 –5 –30 0 –0.2 –6 Collector-Emitter Voltage V C E (V) h FE – I C Characteristics (Typical) se T I C =–5A –1 se I C =–1 0A –10 (Ca –5 I C =–15A (Ca I B =–0.3mA –2 ˚C –0. 5m A 25˚C –0.8 mA –10 (V C E =–4V) 125 A m –2 Collector Current I C (A) –1 .0m A –4 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) –1.5mA –15 Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) –50mA –10mA –3mA 1.4 E 1.1typ I C – V CE Characteristics (Typical) Cut -off Fre quen cy f T (MH Z ) C tf (µs) –40 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) –2 2.0±0.1 b V 4.0max –1 0 4.8±0.2 V VCE=–12V, IE=2A IB 19.9±0.3 IC=–30mA VCE=–4V, IC=–10A 1.8 ICBO 5.0±0.2 Unit 2.0 Ratings IC 0 C External Dimensions MT-100(TO3P) (Ta=25°C) Conditions VEBO Tstg Equivalent circuit Application : Audio, Series Regulator and General Purpose 20.0min Symbol B –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 55. ( 7 0Ω) E 2SB1648 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) V Conditions Ratings Unit VCB=–150V Symbol ICBO –100max µA 36.4±0.3 24.4±0.2 VEB=–5V A A VCE(sat) PC 200(Tc=25°C) W VBE(sat) Tj 150 °C –2.5max V –3.0max V 45typ MHz hFE –1 5000min∗ VCE=–12V, IE=2A –17 IB V V(BR)CEO IC µA IEBO V –150min IC=–10A, IB=–10mA V –5 –100max VCE=–4V, IC=–10A –150 VEBO IC=–30mA IC=–10A, IB=–10mA VCEO fT Tstg –55 to +150 COB °C 6.0±0.2 320typ VCB=–10V, f=1MHz 2.1 2-ø3.2±0.1 9 7 Unit –150 VCBO pF a b 2 3 0.65 +0.2 -0.1 1.05 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 4 –10 –10 5 –10 10 0.7typ 1.6typ C E Weight : Approx 18.4g a. Part No. b. Lot No. tf (µs) –40 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) 1.1typ V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) 0 0 –2 –4 0 –0.2 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –10 (V C E =–4V) 10,000 5,000 –1 –5 –10 –17 125˚C Transient Thermal Resistance Typ –0.5 25˚C –30˚C 10000 5000 1000 –0.2 –0.5 Collector Current I C (A) –1 –5 –10 –17 ) mp Te se (Ca 0.1 1 m s s –5 120 ) at si nk –0.05 –3 emp he 10 eT ite Without Heatsink Natural Cooling fin –1 –0.5 160 In Co lle ctor Cu rre nt I C (A) DC 10 0m ith Emitter Current I E (A) 5 1000 2000 W 1 100 P c – T a Derating 80 40 –0.1 0.5 Cas 10 Time t(ms) Maxim um Power Dissip ation P C (W) 10 0.05 0.1 –30 0.5 200 –10 20 p) 5˚C 1 –50 40 –3 2 Safe Operating Area (Single Pulse) 60 –2 θ j-a – t Characteristics (V C E =–12V) 0 0.02 –1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off F req uenc y f T (MH Z ) 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 50000 1,000 –0.2 0 –50 –100 –200 (V C E =–4V) DC Curr ent Gain h FE DC Curr ent Gain h FE –5 Base Current I B (mA) h FE – I C Characteristics (Typical) 50,000 5 ˚C ( I C =–5A –1 10 12 I C =–1 0A Tem I B =–0.3mA –5 I C =–15A ase –0.5mA –2 C (C –0.8 mA –10 15 25˚ –1.0 mA (V C E =–4V) 17 –3 θ j - a ( ˚C/W) –50 –15 Collector Current I C (A) –1 .5 m A Collector Current I C (A) –2mA –3mA mA –17 Collector-Emitter Saturation Voltage V C E (s at) (V) –1 0m A I C – V CE Characteristics (Typical) C External Dimensions MT-200 (Ta=25°C) 21.4±0.3 Ratings Symbol sElectrical Characteristics (Ta=25°C) 4.0max sAbsolute maximum ratings Equivalent circuit Application : Audio, Series Regulator and General Purpose 20.0min Darlington B –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 53
- 56. (7 0 Ω) E 2SB1649 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application : Audio, Series Regulator and General Purpose sElectrical Characteristics External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Unit ICBO VCB=–150V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V Symbol W IC=–10A, IB=–10mA VBE(sat) Tj 150 °C –3.0max V 45typ MHz 320typ pF fT –55 to +150 °C COB 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 4 –10 –10 5 –10 10 0.7typ 1.6typ 1.1typ 4.4 Weight : Approx 6.5g a. Part No. b. Lot No. –15 –0.5 –1 –5 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) Typ 10,000 5,000 –5 –10 –15 125˚C Transient Thermal Resistance DC Curr ent Gain h F E 50000 –1 p) emp ) Tem 0 –1 25˚C –30˚C 10000 5000 1000 –0.2 –0.5 Collector Current I C (A) –1 –2 –5 –10 –15 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) –3 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –50 –100 –200 Base Current I B (mA) h FE – I C Characteristics (Typical) 1,000 –0.2 se –30 0 –0.2 –6 Collector-Emitter Voltage V C E (V) 50,000 –5 ˚C ( I C =–5A –1 seT I C =–1 0A –10 (Ca I C =–15A (Ca –5 –2 (V CE =–4V) ˚C I B =–0.3mA –4 –3 25˚C –0. 5m A –2 E 125 –0.8 mA –10 0 C I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) A m –2 Collector Current I C (A) –1 .0m A 0 3.35 V CE ( sa t ) – I B Characteristics (Typical) –1.5mA –15 B θ j - a (˚C /W) –50mA –10mA –3mA Collector-Emitter Saturation Voltage V C E (s at) (V) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.5 tf (µs) –40 +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 1.05 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) DC Curr ent Gain h F E 1.75 mp) Tstg 3.0 A 85(Tc=25°C) 3.3 –1 PC 3.45 ±0.2 ø3.3±0.2 a b V 16.2 IB VCE(sat) 5.5±0.2 1.6 –2.5max hFE 23.0±0.3 IC=–10A, IB=–10mA V(BR)CEO A 15.6±0.2 5000min∗ VCB=–10V, f=1MHz V –15 –150min VCE=–12V, IE=2A –5 IC IC=–30mA VCE=–4V, IC=–10A VEBO 0.8±0.2 Conditions V 5.5 Unit –150 9.5±0.2 Ratings VCBO Symbol C eT e sAbsolute maximum ratings (Ta=25°C) Equivalent circuit Cas Darlington B Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 60 100 40 m s –5 ite he at si 40 20 –0.1 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 54 5 10 –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 nk Without Heatsink Natural Cooling 60 fin –1 –0.5 80 In 20 DC s ith Collect or Cur re nt I C ( A) –10 10 0m W Cut- off F req uency f T (M H Z ) 10 Maxim um Power Dissipation P C (W) –50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 57. ( 7 0Ω) E 2SB1659 Darlington Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589) sAbsolute maximum ratings (Ta=25°C) Equivalent circuit C Application : Audio, Series Regulator and General Purpose sElectrical Characteristics Symbol B External Dimensions MT-25(TO220) (Ta=25°C) Ratings Unit ICBO VCB=–110V –100max µA VCEO –110 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –110min V IC –6 A hFE VCE=–4V, IC=–5A 5000min∗ IC=–5A, IB=–5mA –2.5max IC=–5A, IB=–5mA –3.0max V IB –1 A VCE(sat) PC 50(Tc=25°C) W VBE(sat) Tj 150 °C fT VCE=–12V, IE=0.5A 100typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 110typ 10.2±0.2 pF 2.0±0.1 ø3.75±0.2 a b 1.35 4.0max 12.0min Tstg V 4.8±0.2 3.0±0.2 Conditions V 16.0±0.7 Unit –110 8.8±0.2 Ratings VCBO Symbol 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 2.5 sTypical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 1.4 6 –5 –10 5 –5 5 1.1typ 3.2typ Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) –30 1.1typ V CE ( sa t ) – I B Characteristics (Typical) 0 0 –2 –4 –6 0 –0.1 –0.5 –1 Collector-Emitter Voltage V C E (V) –5 –10 (V C E =–4V) 40000 50000 125˚C 5000 1000 500 –1 –5 –6 25˚C 10000 –30˚C 5000 1000 500 100 –0.02 –0.05 –0.1 –0.5 f T – I E Characteristics (Typical) –1 –5 –6 p) eT e mp) ) Cas si nk Ma ximum Po we r Dissipatio n P C (W) 30 at Cu t-off Fr eque ncy f T (MH Z ) 40 he Emitter Current I E (A) 5 6 emp P c – T a Derating 50 ite 1 1000 2000 fin 0.5 100 Time t(ms) In 0.1 10 ith 20 0.05 1 W 40 0 0.02 Tem 0.4 120 60 ˚C ( 0.5 Safe Operating Area (Single Pulse) 80 –3 1 (V C E =–12V) Typ –2 5 Collector Current I C (A) Collector Current I C (A) 100 –1 θ j-a – t Characteristics Transient Thermal Resistance DC C urrent G ain h FE Typ 10000 –0.5 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =–4V) –0.05 –0.1 0 –50 –100 Base Current I B (mA) h FE – I C Characteristics (Typical) 200 –0.02 –2 –30 I C =–3A –1 –4 se –2 –5A seT I B =–0. 1mA –2 (Ca Collector Current I C (A) –0. 2m A –4 (V CE =–4V) –6 –3 (Ca –0 .3 m A ˚C A 25˚C .4m 125 –0 Collector Current I C (A) –0 I C – V BE Temperature Characteristics (Typical) A θ j- a ( ˚C/W) –5m A –6 m .5 Collector-Emitter Saturation Voltage V C E (s at) (V) –1 m A I C – V CE Characteristics (Typical) DC Curr ent Gain h F E 2.5 B C E 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 55
- 58. (7 0 Ω) E 2SB1685 Darlington Ratings VCBO –110 V VCEO –110 VEBO –5 IC –6 IB –1 PC Tj sElectrical Characteristics Unit C External Dimensions MT-100(TO3P) (Ta=25°C) Unit VCB=–110V –100max µA V IEBO VEB=–5V –100max µA V V(BR)CEO IC=–30mA –110min V A hFE VCE=–4V, IC=–5A 5000min∗ A VCE(sat) IC=–5A, IB=–5mA –2.5max 60(Tc=25°C) W VBE(sat) IC=–5A, IB=–5mA –3.0max V 150 °C fT VCE=–12V, IE=0.5A 100typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 110typ pF 15.6±0.4 9.6 4.0 19.9±0.3 1.8 ICBO a 4.8±0.2 5.0±0.2 Ratings 2.0±0.1 ø3.2±0.1 b V 2 4.0max 20.0min Symbol 2.0 Conditions Symbol Tstg Equivalent circuit Application : Audio, Series Regulator and General Purpose Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2641) sAbsolute maximum ratings (Ta=25°C) B 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 sTypical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 6 –5 –10 5 –5 5 1.1typ 3.2typ –2 –4 0 –0.1 –6 –0.5 –1 –5 –10 (V C E =–4V) 50000 Typ 5000 1000 500 –1 –5 –6 Transient Thermal Resistance D C Cur r ent Gai n h F E 125˚C –0.5 25˚C 10000 –30˚C 5000 1000 500 100 –0.01 –0.05 –0.1 Collector Current I C (A) –0.5 Typ p) mp) (Cas e Te emp ) Tem –30˚C –3 –1 5 1 0.5 –5 –6 1 5 10 50 100 500 1000 2000 Time t(ms) P c – T a Derating 60 –20 120 –2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =–12V) 25˚C –1 Collector Current I C (A) f T – I E Characteristics (Typical) se T se 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 50000 –10 100 s he at si nk Without Heatsink Natural Cooling 40 ite –1 –0.5 –0.1 20 m s fin 40 DC 0m In 60 10 10 ith Co lle ctor Cu rre nt I C (A) –5 80 W Maxim um Power Dissipation P C (W) –0.05 –0.1 0 –50 –100 (V C E =–4V) 100 –0.01 –2 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 (Ca I C =–3A –1 –4 (Ca –5A ˚C –2 125 I B =–0. 1mA –2 0 (V C E =–4V) –6 –3 θ j- a ( ˚C/W) Collector Current I C (A) –0. 2m A –4 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) –0 .3 m A Collector-Emitter Voltage V C E (V) D C Cur r ent Gai n h F E Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at ) (V ) –5m A –6 A m 5mA –1 –0. A .4m –0 1.4 E 1.1typ I C – V CE Characteristics (Typical) Cut-o ff Fr equ ency f T (M H Z ) C tf (µs) –30 0 5.45±0.1 B 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 56 5 6 –0.05 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 59. (7 0 Ω) E 2SB1686 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2642) sElectrical Characteristics (Ta=25°C) Ratings Unit VCBO –110 V ICBO VCEO –110 V IEBO VEBO –5 V V(BR)CEO IC –6 A IB –1 PC Tj Symbol Ratings Unit VCB=–110V –100max µA V hFE VCE=–4V, IC=–5A 5000min∗ A VCE(sat) IC=–5A, IB=–5mA –2.5max W VBE(sat) IC=–5A, IB=–5mA –3.0max V 150 °C fT VCE=–12V, IE=0.5A 100typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 110typ pF ø3.3±0.2 a b 13.0min 3.9 V 0.8±0.2 µA –110min 1.35±0.15 1.35±0.15 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) IC (A) –5 5 –10 V CE ( sat ) – I B Characteristics (Typical) –4 0 –0.1 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –5 –10 (V C E =–4V) 50000 D C Cur r ent Gai n h F E Typ 5000 1000 500 –1 –5 –6 25˚C 10000 –30˚C 5000 1000 500 100 –0.01 –0.05 –0.1 Collector Current I C (A) –0.5 p) ) Tem (Cas e Te emp –2 –3 –1 θ j-a – t Characteristics –5 –6 5.0 1.0 0.5 0.3 1 10 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 120 –30˚C –1 Collector Current I C (A) f T – I E Characteristics (Typical) 30 –20 10 Typ C –0.1 nk 20 si Without Heatsink Natural Cooling at –0.5 he –1 20 ite Co lle ctor Cu rren t I C (A) s s fin 40 m In 60 D 0m ith 80 10 W –5 M aximu m Power Dissip ation P C (W) –10 100 Cut-o ff Fr equ ency f T (MH Z ) D C Cur r ent Gai n h F E 125˚C –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.05 –0.1 0 –50 –100 h FE – I C Temperature Characteristics (Typical) 50000 100 –0.01 –2 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 se I C =–3A –1 –4 se T –5A (Ca –2 (Ca Collector Current I C (A) I B =–0. 1mA –2 –2 (V C E =–4V) –6 –3 25˚C –0 .3 m A –0. 2m A 0 I C – V BE Temperature Characteristics (Typical) ˚C mA –4 0 1.1typ 125 . .4 –0 3.2typ B C E Collector Current I C (A) –0 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) A Collector-Emitter Saturation Voltage V C E (s at) (V ) A m –1 –5m A –6 5m tstg (µs) 1.1typ 5 –5 I C – V CE Characteristics (Typical) ton (µs) IB2 (mA) IB1 (mA) θ j- a ( ˚ C/W) 6 –30 VBB2 (V) VBB1 (V) 2.4±0.2 2.2±0.2 Transient Thermal Resistance RL (Ω) VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) 4.2±0.2 2.8 c0.5 8.4±0.2 –100max 10.1±0.2 16.9±0.3 VEB=–5V IC=–30mA 30(Tc=25°C) Tstg External Dimensions FM20(TO220F) (Ta=25°C) Conditions mp) Symbol C Application : Audio, Series Regulator and General Purpose 4.0±0.2 sAbsolute maximum ratings Equivalent circuit ±0.2 Darlington B 10 Without Heatsink 2 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 5 6 –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 57
- 60. (7 0 Ω) E 2SB1687 Darlington Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2643) sAbsolute maximum ratings Unit VCBO –110 V VCEO –110 VEBO IC IB Symbol µA V IEBO VEB=–5V –100max µA –5 V V(BR)CEO IC=–30mA –110min V –6 A hFE VCE=–4V, IC=–5A 5000min∗ –1 A VCE(sat) IC=–5A, IB=–5mA –2.5max 60(Tc=25°C) W VBE(sat) Tj 150 °C fT VCE=–12V, IE=0.5A –100typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz –110typ pF IC (A) 3.0 16.2 1.05 –5 –5 5 –10 –4 0 –0.1 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –5 –10 (V C E =–4V) 50000 Typ 5000 1000 500 –5 –6 25˚C 10000 –30˚C 5000 1000 500 100 –0.01 –0.05 –0.1 Collector Current I C (A) –0.5 Typ p) mp) e Te emp (Cas –3 –1 5 1 0.5 1 –5 –6 10 100 1000 2000 Time t(ms) P c – T a Derating 60 –20 120 –2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =–12V) ) Tem –1 Collector Current I C (A) f T – I E Characteristics (Typical) 10 he at si nk Without Heatsink Natural Cooling 40 ite –1 –0.5 –0.1 20 s s fin 40 m In 60 DC 0m ith 80 10 W Collector Curre nt I C (A) –5 Ma xim um Powe r Dissipation P C ( W) –10 100 Cut- off Fr equ ency f T (M H Z ) Transient Thermal Resistance DC Cur rent Gain h F E 125˚C –1 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 50000 –0.5 0 –50 –100 (V C E =–4V) –0.05 –0.1 –2 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 se I C =–3A –1 –4 se T –5A (Ca –2 –30˚C –2 –2 (V C E =–4V) –6 –3 (Ca Collector Current I C (A) I B =–0. 1mA 100 –0.01 I C – V BE Temperature Characteristics (Typical) ˚C –0 .3 m A –0. 2m A 0 Weight : Approx 6.5g a. Part No. b. Lot No. E 25˚C mA –4 0 1.1typ 3.35 1.5 C 125 .4 –0 4.4 B Collector Current I C (A) – 3.2typ 0.65 +0.2 -0.1 A Collector-Emitter Saturation Voltage V C E (s at) (V ) A m –1 –5m A –6 m 1.1typ +0.2 -0.1 5.45±0.1 tf (µs) V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 5 0. 5 tstg (µs) θ j- a (˚ C/W) 6 –30 ton (µs) IB2 (mA) 0.8 2.15 1.5 IB1 (mA) VBB2 (V) VBB1 (V) 1.75 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) 3.45 ±0.2 3.3 V ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) VCC (V) 5.5±0.2 ø3.3±0.2 a b V –3.0max IC=–5A, IB=–5mA 15.6±0.2 5.5 –100max 1.6 VCB=–110V 9.5±0.2 ICBO 0.8±0.2 Unit 23.0±0.3 Ratings Tstg 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 58 5 6 C External Dimensions FM100(TO3P) (Ta=25°C) Conditions PC DC Cur rent Gain h F E Equivalent circuit Application : Audio, Series Regulator and General Purpose sElectrical Characteristics (Ta=25°C) Ratings Symbol B –0.05 –5 –10 –50 –100 –150 Collector-Emitter Voltage V C E (V) 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150
- 61. 2SC2023 Silicon NPN TripleDiffused Planar Transistor sAbsolute maximum ratings sElectrical Characteristics (Ta=25°C) Ratings Unit VCBO 300 V VCEO 300 VEBO IC Symbol External Dimensions MT-25(TO220) (Ta=25°C) Unit ICBO VCB=300V 1.0max mA V IEBO VEB=6V 1.0max mA 6 V V(BR)CEO IC=25mA 300min V 2 A hFE VCE=4V, IC=0.5A 30min A VCE(sat) IC=1.0A, IB=0.2A 1.0max V 40(Tc=25°C) W fT VCE=12A, IE=–0.2A 10typ MHz Tj 150 °C COB VCB=10V, f=1MHz 75typ pF –55 to +150 2.5 2.5 1.4 B C E VCC (V) RL (Ω) IC (A) VB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 100 1.0 –5 100 –200 0.3typ 4.0typ Weight : Approx 2.6g a. Part No. b. Lot No. tf (µs) 100 1.0typ V CE ( sa t ) – I B Characteristics (Typical) 0 0 1 2 3 0 4 0 0.1 0.2 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 Typ 50 ˚C 25˚C 50 –30 10 3 10 100 125 100 Transient Thermal Resistance DC Cur rent Gain h F E 200 10 0 0.2 1000 2000 5 ˚C 10 50 0.4 f T – I E Characteristics (Typical) 100 500 1000 2000 0.2 1 1000 2000 100 Time t(ms) P c – T a Derating Natural Cooling Silicone Grease Heatsink: Aluminum in mm s he 20 at 150x150x2 si nk Without Heatsink Natural Cooling 0.05 ite 0.1 fin 0.5 In 1 30 ith C W Ma ximum Po we r Dissipatio n P C ( W) s ms D 1m 20 Typ Collector Curr ent I C (A) p) mp) ase Te 10 40 5m Cut-o ff F requ ency f T (MH Z ) ase Tem 0.5 5 10 –30˚C (C 1 10 20 1.0 5 Safe Operating Area (Single Pulse) (V C E =12V) 0.8 θ j-a – t Characteristics Collector Current I C (mA) Collector Current I C (mA) 0.6 Base-Emittor Voltage V B E (V) (V C E =4V) 3 0 0.3 Base Current I B (A) h FE – I C Characteristics (Typical) 100 mp) 2A I C =1A Collector-Emitter Voltage V C E (V) 25˚C (C 1 1 e Te A /s to p (Cas I B =2 0m (V CE =4V) 125˚C 1 2 θ j - a (˚C /W ) Collector Current I C (A) I mA 2 3 Collector-Emitter Saturation Voltage V C E (s at) (V) 2 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) I C – V CE Characteristics (Typical) DC Cur rent Gain h F E 1.35 0.65 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 200 B= 2.0±0.1 b °C Tstg 4.8±0.2 ø3.75±0.2 a 4.0max 0.2 PC 12.0min IB 10.2±0.2 3.0±0.2 Ratings 16.0±0.7 Conditions 8.8±0.2 Symbol Application : Series Regulator, Switch, and General Purpose 100x100x2 10 50x50x2 Without Heatsink 0 –0.003 0.02 –0.01 –0.05 –0.1 Emitter Current I E (A) –0.5 –1 2 10 100 Collector-Emitter Voltage V C E (V) 500 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 59
- 62. 2SC2837 LAPT Silicon NPN EpitaxialPlanar Transistor (Complement to type 2SA1186) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Unit VCB=150V 100max µA V IEBO VEB=5V 100max µA IC=25mA 150min V V VCEO 150 VEBO 5 V V(BR)CEO IC 10 A hFE VCE=4V, IC=3V 50min∗ V A VCE(sat) IC=5A, IB=0.5A 100(Tc=25°C) W fT VCE=12V, IE=–1A 70typ MHz Tj 150 °C COB VCB=80V, f=1MHz 60typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 5.45±0.1 RL (Ω) IC (A) VB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 12 5 –5 500 –500 0.2typ 1.4typ C Weight : Approx 6.0g a. Part No. b. Lot No. 0.35typ V CE ( sat ) – I B Characteristics (Typical) 0 0 1 2 3 0 4 0 0.5 1.0 1.5 0 2.0 (V C E =4V) 200 200 Typ 50 1 25˚C 100 –30˚C 50 20 0.02 10 Transient Thermal Resistance D C Cur r ent Gai n h F E 125˚C 0.05 0.1 0.5 f T – I E Characteristics (Typical) 1 5 10 p) p) Tem em se 3 1 0.5 0.2 1 10 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) (V C E =12V) 2 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) 120 1 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =4V) 0.1 0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 0.02 eT 2 5A Collector-Emitter Voltage V C E (V) 100 4 (Ca I B =20mA 2 I C =10A 1 ˚C 40mA as 4 6 –30 80mA 2 (C 12 0m A 6 8 ˚C A A 160m 25 200m 8 (V CE =4V) 10 3 5˚C A 12 300m Collector Current I C (A) A I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) m 400 Collector-Emitter Saturation Voltage V C E (s at) (V ) 10 1.4 E tf (µs) 60 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Collector Current I C (A) 2 3 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 2.0±0.1 ø3.2±0.1 4.0max 2 PC 20.0min IB P c – T a Derating 100 30 m s 100 Collector-Emitter Voltage V C E (V) 200 nk 10 si 2 50 at –6 he –1 ite 0.2 –0.1 Emitter Current I E (A) 60 Without Heatsink Natural Cooling 0.5 20 0 –0.02 1 fin 40 C In 60 D 5 ith Collector Curre nt I C ( A) 10 Typ 80 W M aximum Power Dissipa ti on P C (W) 10 100 Cu t-off Fr eque ncy f T ( MH Z ) DC Curr ent Gain h FE a 4.8±0.2 b 2.0max Tstg 15.6±0.4 9.6 4.0 150 1.8 ICBO VCBO 5.0±0.2 Ratings Symbol Unit 2.0 Conditions Ratings 19.9±0.3 Symbol Application : Audio and General Purpose 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 63. 2SC2921 LAPT Application : Audioand General Purpose Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) sAbsolute maximum ratings Symbol sElectrical Characteristics (Ta=25°C) Ratings Conditions V ICBO Ratings Unit VCB=160V Symbol Unit 160 VCBO External Dimensions MT-200 (Ta=25°C) 100max µA VEB=5V 100max 160min 24.4±0.2 µA IC=25mA 6.0±0.2 36.4±0.3 2.1 V V(BR)CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 150(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg 2-ø3.2±0.1 9 7 IEBO V 21.4±0.3 V 5 a b 2 4.0max 160 VEBO 20.0min VCEO 3 5.45±0.1 sTypical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 12 5 –5 500 –500 0.2typ 1.5typ E Weight : Approx 18.4g a. Part No. b. Lot No. 0.35typ 0 0 1 2 3 0 4 0 0.2 0.4 0.6 0.8 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 200 Typ 50 1 100 25˚C –30˚C 50 20 0.02 10 15 Transient Thermal Resistance DC Cur r ent Gai n h F E 125˚C Collector Current I C (A) 0.1 0.5 1 10 15 10 p) Tem 100 1000 2000 Time t(ms) P c – T a Derating m s C 100 Collector-Emitter Voltage V C E (V) 200 nk 10 si 2 80 at 0.3 he Without Heatsink Natural Cooling ite 1 fin 5 120 In Collector Curr ent I C (A) D 10 0.5 –10 se 10 ith 20 Emitter Current I E (A) 1 W 40 –1 0.1 160 Typ 60 –0.1 0.5 40 80 Cut- off F re quen cy f T (MH Z ) 5 1 Safe Operating Area (Single Pulse) (V C E =12V) 2 2 Collector Current I C (A) f T – I E Characteristics (Typical) 0 –0.02 1 θ j-a – t Characteristics M aximu m Power Dissipat io n P C (W) 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 10 0.02 p) I C =10A 5A Collector-Emitter Voltage V C E (V) 100 5 (Ca I B =20mA 1 em 50mA 5 10 ˚C 10 0m A 2 eT A 15 0m A –30 200m 10 as mA (C Collector Current I C (A) 300 (V CE =4V) 15 3 5˚C mA ˚C 400 12 mA 25 500 Collector Current I C (A) A I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) 0m 75 0m 60 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) A 15 DC Cur rent Gain h F E C tf (µs) 60 3.0 +0.3 -0.1 5.45±0.1 B I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 61
- 64. 2SC2922 LAPT Silicon NPN EpitaxialPlanar Transistor (Complement to type 2SA1216) sAbsolute maximum ratings (Ta=25°C) Ratings sElectrical Characteristics Unit 180 Symbol V VCBO Application : Audio and General Purpose Symbol Ratings Unit VCB=180V ICBO External Dimensions MT-200 (Ta=25°C) Conditions 100max µA VEB=5V 100max 180min 24.4±0.2 µA IC=25mA 2.1 V VCEO 180 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8V IB 5 A VCE(sat) IC=8A, IB=0.8A 2.0max V PC 200(Tc=25°C) W fT VCE=12V, IE=–2A 50typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ pF –55 to +150 °C ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) 2-ø3.2±0.1 7 a b 4.0max 5.45±0.1 RL (Ω) IC (A) VB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 4 10 –5 1 –1 0.2typ 1.3typ C E 0.45typ V CE ( sat ) – I B Characteristics (Typical) I B =20mA 0 1 0 2 3 0 4 0 0.2 0.4 0.6 0.8 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 100 Typ 50 5 10 125˚C Transient Thermal Resistance DC Cur rent Gain h F E 200 1 100 25˚C –30˚C 50 10 0.02 17 Collector Current I C (A) 0.1 0.5 1 5 10 17 100 Collector-Emitter Voltage V C E (V) 300 Collector Cur rent I C (A) p) Tem nk 10 si 2 at Without Heatsink Natural Cooling he 1 120 ite 5 160 fin –10 1000 In –5 100 ith 62 10 W Maxim um Power Dissip ation P C (W) s DC 10 0.2 Emitter Current I E (A) 1 200 0.5 –1 p) 0.1 P c – T a Derating m 20 –0.1 em 0.5 Time t(ms) 10 40 se 1 50 Typ 2.4 2 Safe Operating Area (Single Pulse) 80 2 θ j-a – t Characteristics (V C E =12V) 0 –0.02 1 Collector Current I C (A) f T – I E Characteristics (Typical) 60 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 5 5A Collector-Emitter Voltage V C E (V) 10 0.02 eT I C =10A 1 (Ca 50mA as 5 10 ˚C 100 mA 2 –30 A (C 200m 10 15 5˚C 30 0mA (V CE =4V) 17 12 15 mA mA 500 A 400m ˚C 600 25 mA Collector Current I C (A) 0 70 θ j - a (˚ C/W) 1.5 A 1A I C – V BE Temperature Characteristics (Typical) 3 Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V CE Characteristics (Typical) 17 3.0 +0.3 -0.1 Weight : Approx 18.4g a. Part No. b. Lot No. tf (µs) 40 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Collector Current I C (A) 2 3 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) Cut -off Fre quen cy f T ( MH Z ) 9 21.4±0.3 30min∗ 20.0min Tstg DC C urrent G ain h FE 6.0±0.2 36.4±0.3 80 40 5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2000
- 65. 2SC3179 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SA1262) sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose sElectrical Characteristics External Dimensions MT-25(TO220) (Ta=25°C) Unit VCB=80V 100max µA V IEBO VEB=6V 100max µA 6 V V(BR)CEO V 4 A hFE V VEBO IC IC=25mA 60min VCE=4V, IC=1V 40min V A VCE(sat) IC=2A, IB=0.2A 30(Tc=25°C) W fT VCE=12V, IE=–0.2A 15typ MHz Tj 150 °C COB VCB=10V, f=1MHz 60typ pF –55 to +150 ø3.75±0.2 a b °C Tstg 0.65 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 2.5 2.5 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 20 10 2 10 –5 200 –200 0.2typ 1.9typ 0.29typ 0 0 1 2 3 0 0.005 0.01 4 0.05 0.1 0.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 Typ 100 50 1 125˚C 100 25˚C –30˚C 50 20 0.02 4 0.1 f T – I E Characteristics (Typical) 0.5 1 4 1 ) mp Te se (Ca ˚C 10 100 1000 Time t(ms) P c – T a Derating 1m s 10 m s 10 he at si nk Without Heatsink Natural Cooling ite 0.5 fin 1 20 In C ith s D W 0m Co lle ctor Cu rre nt I C ( A) –30 1 30 5 10 1.2 θ j-a – t Characteristics 0.5 10 30 Typ 1.0 5 Safe Operating Area (Single Pulse) (V C E =12V) 20 0.8 Collector Current I C (A) Collector Current I C (A) 40 Transient Thermal Resistance DC Curr ent Gain h FE 500 0.5 0.6 Base-Emittor Voltage V B E (V) (V C E =4V) Cut- off F req uency f T (M H Z ) 0 0.4 1 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 p) I C =1 A Collector-Emitter Voltage V C E (V) 20 0.01 em 1 2A se 3A Ca 10mA 2 C( 1 0.5 eT 20mA 3 as 30mA 2 1.0 25˚ 40mA (C 3 5˚C 60mA 12 0 (V CE =4V) 4 θ j- a ( ˚C/W) =1 A Maximu m Power Dissipa tion P C (W) Collector Current I C (A) IB 80m A I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) 4 0m Weight : Approx 2.6g a. Part No. b. Lot No. V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V CE Characteristics (Typical) 1.4 B C E VCC (V) D C Cur r ent Gai n h F E 1.35 4.0max 1 PC 12.0min IB 0.6max 2.0±0.1 ) 60 4.8±0.2 mp VCEO 10.2±0.2 Te 80 3.0±0.2 ICBO VCBO Symbol 16.0±0.7 Ratings Unit 8.8±0.2 Conditions Ratings Symbol 10 Without Heatsink 2 0 –0.005 –0.01 0.2 –0.1 –0.5 –1 Emitter Current I E (A) –4 3 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 63
- 66. 2SC3263 LAPT Silicon NPN EpitaxialPlanar Transistor (Complement to type 2SA1294) Application : Audio and General Purpose sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit ICBO VCB=230V 100max µA VCEO 230 V IEBO VEB=5V 100max µA IC=25mA 230min V V V(BR)CEO 15 A hFE VCE=4V, IC=5A 50min∗ 4.0 5 IC 19.9±0.3 VEBO 15.6±0.4 9.6 a 4.8±0.2 2.0±0.1 ø3.2±0.1 b A VCE(sat) IC=5A, IB=0.5A 2.0max V 130(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) Tstg 2 4.0max 4 PC 20.0min IB 3 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 5.45±0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 12 5 10 –5 500 –500 0.30typ 2.40typ Weight : Approx 6.0g a. Part No. b. Lot No. I B =20mA 0 0 1 2 3 1 I C =10A 5A 0 4 0 0.5 1.0 Collector-Emitter Voltage V C E (V) 1.5 0 2.0 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 200 Typ 50 0.5 1 5 100 25˚C –30˚C 50 10 0.02 10 15 Transient Thermal Resistance DC C urrent G ain h FE 125˚C 0.1 Collector Current I C (A) 0.1 0.5 2 1 5 10 15 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) p) 1 Base-Emittor Voltage V B E (V) (V C E =4V) 10 0.02 0 Base Current I B (A) h FE – I C Characteristics (Typical) 100 5 Tem 50mA se 5 10 (Ca 10 0m A 2 ˚C A eT em p Tem ) p) 200m se 10 Ca mA C( 400 25˚ mA –30 600 (V C E =4V) 15 3 as A (C 1.0 5˚C 5A 12 1. Collector Current I C (A) 0A I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) 3. 2. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 0A 15 1.4 E 0.50typ I C – V CE Characteristics (Typical) Collector Current I C (A) C tf (µs) 60 0.65 +0.2 -0.1 5.45±0.1 B Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 130 40 10 80 si nk Collector Curr ent I C (A) at Without Heatsink Natural Cooling he 0.5 20 ite 1 fin 40 100 In 60 DC 5 ith Typ s W 10 m Maxim um Power Dissip ation P C (W) 100 Cut- off F req uenc y f T (MH Z ) DC Curr ent Gain h F E 1.8 Conditions V 5.0±0.2 Unit 230 2.0 Ratings VCBO Symbol 50 Without Heatsink 0 –0.02 0.1 –0.1 –1 Emitter Current I E (A) 64 –10 3 10 100 Collector-Emitter Voltage V C E (V) 300 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 67. 2SC3264 LAPT Silicon NPN EpitaxialPlanar Transistor (Complement to type 2SA1295) sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit 230 Symbol V ICBO VCBO Application : Audio and General Purpose External Dimensions MT-200 (Ta=25°C) Conditions Ratings Unit VCB=230V 100max µA VEB=5V 100max 230min 24.4±0.2 µA IC=25mA 2.1 V VCEO 230 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=5A 50min∗ IB 5 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 200(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 2-ø3.2±0.1 21.4±0.3 7 9 a b 2 4.0max 20.0min Tstg 3 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 12 5 10 –5 0.5 –0.5 0.30typ 2.40typ C E Weight : Approx 18.4g a. Part No. b. Lot No. tf (µs) 60 0.50typ V CE ( sat ) – I B Characteristics (Typical) 10 0m A 5 50mA I B =20mA 0 0 1 2 3 2 1 I C =10A 0 4 0 0.5 1.0 1.5 0 2.0 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 200 100 Typ 50 100 Transient Thermal Resistance DC Curr ent Gain h FE 125˚C 25˚C –30˚C 50 10 1 1 5 10 17 0.02 Collector Current I C (A) 0.1 0.5 3 1 5 10 17 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 5 5A Collector-Emitter Voltage V C E (V) 10 0.02 10 mp) A 200m e Te A p) 400m 10 15 em A (Cas Collector Current I C (A) 600m eT A 17 –30˚C 1.0 15 (V C E =4V) 3 Cas A 25˚C 1.5 ˚C ( 0A 125 2. Collector Current I C (A) A I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) 0 3. Collector-Emitter Saturation Voltage V C E (s at) (V ) 17 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 40 200 10 80 3 10 100 Collector-Emitter Voltage V C E (V) 300 Co lle ctor Cu rren t I C ( A) nk Emitter Current I E (A) –10 si –1 at 0.1 –0.1 he 0 –0.02 120 ite Without Heatsink Natural Cooling fin 0.5 20 In 1 ith 40 5 160 W Typ s DC 10 60 m Ma xim um Powe r Dissipat io n P C (W) 100 Cut-o ff Fr eque ncy f T ( MH Z ) DC Curr ent Gain h FE 6.0±0.2 36.4±0.3 80 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 65
- 68. 2SC3284 LAPT Silicon NPN EpitaxialPlanar Transistor (Complement to type 2SA1303) sAbsolute maximum ratings Symbol Application : Audio and General Purpose sElectrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit ICBO VCB=150V 100max µA VCEO 150 V IEBO VEB=5V 100max µA IC=25mA 150min V 5 V V(BR)CEO IC 14 A hFE VCE=4V, IC=5A 50min∗ a VCE(sat) IC=5A, IB=0.5A 2.0max V W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 2 3 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 12 5 10 –5 0.5 –0.5 0.2typ 1.5typ C Weight : Approx 6.0g a. Part No. b. Lot No. 0.35typ 0 0 1 2 3 0 0.2 0.4 0.6 0.8 (V C E =4V) 200 Typ 50 5 100 25˚C –30˚C 50 20 0.02 10 14 Transient Thermal Resistance DC Cur rent Gain h FE 125˚C 1 Collector Current I C (A) 0.1 0.5 p) Tem se (Ca 1 2 1 5 10 14 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) ˚C 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 200 0.5 0 1.0 Base Current I B (A) (V C E =4V) 0.1 p) 5A 0 4 h FE – I C Characteristics (Typical) 20 0.02 em I C =10A Collector-Emitter Voltage V C E (V) 100 5 –30 I B =20mA 1 eT 50mA 4 10 as 10 0m A 8 2 (C 15 0m A ˚C A 25 Collector Current I C (A) 200m 5˚C 3 (V C E =4V) 14 3 12 12 A 00m Collector Current I C (A) mA I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) 400 75 0m A 14 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0m 60 mA 00 5 1.4 E tf (µs) 60 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 2.0±0.1 ø3.2±0.1 4.0max A 125(Tc=25°C) 20.0min 3 PC Tstg 4.8±0.2 b IB DC Curr ent Gain h F E 15.6±0.4 9.6 4.0 VEBO 19.9±0.3 Symbol 1.8 Conditions V 5.0±0.2 Unit 150 2.0 Ratings VCBO Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 40 130 1m 10 Typ 66 0.2 3 10 100 Collector-Emitter Voltage V C E (V) 200 nk Emitter Current I E (A) –10 si Without Heatsink Natural Cooling at 1 100 he –1 C ite –0.1 s 5 0.5 0 –0.02 m s fin 20 D 0m In 40 10 ith Collector Curre nt I C ( A) 60 s W Cut-o ff F requ ency f T (MH Z ) 10 Maxim um Power Dissip ation P C (W) 80 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 69. 2SC3519/3519A Silicon NPN EpitaxialPlanar Transistor (Complement to type 2SA1386/A) 180 V VCB= VEBO 5 V IEBO IC 15 A V(BR)CEO IB 4 A hFE PC 130(Tc=25°C) W VCE(sat) Tj 150 °C fT –55 to +150 °C COB 180 160 VCB=10V, f=1MHz Tstg µA 180min 160min V IC=5A, IB=0.5A 2.0max V VCE=12V, IE=–2A 50typ MHz 250typ 2 3 1.05 +0.2 -0.1 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 4 10 10 –5 1 –1 0.2typ 1.3typ C Weight : Approx 6.0g a. Part No. b. Lot No. 0.45typ I B =20mA 0 0 1 2 3 0 4 0 0.2 0.4 0.6 0.8 h FE – I C Temperature Characteristics (Typical) (V C E =4V) DC Cur rent Gain h FE 100 Typ 50 5 Transient Thermal Resistance 300 300 1 125˚C 100 25˚C –30˚C 50 10 0.02 10 15 0.1 Collector Current I C (A) 0.5 1 5 10 15 0.1 Co lle ctor Cu rr ent I C (A) ) mp Te nk Collector-Emitter Voltage V C E (V) 2 200 si 100 at 50 he –10 10 ite 1.2SC3519 2.2SC3519A fin Without Heatsink Natural Cooling 100 In 1 0.5 1 –5 1000 2000 ith M aximum Power Dissipa ti on P C (W) ms DC 5 0.05 5 100 P c – T a Derating 0.1 –1 10 W 20 Emitter C urrent I E (A) 1 Time t(ms) 10 –0.1 p) 0.5 130 10 40 se 1 40 Typ (Ca 3 Safe Operating Area (Single Pulse) 80 2 θ j-a – t Characteristics (V C E =12V) 0 –0.02 1 Collector Current I C (A) f T – I E Characteristics (Typical) 60 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 5 5A Collector-Emitter Voltage V C E (V) 10 0.02 em I C =10A 1 ˚C 50mA eT 5 10 –30 10 0m A 2 as A (C 200m 10 C mA ˚C 300 (V C E =4V) 15 3 25 A 5˚ m 400 12 mA Collector Current I C (A) 500 I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0m Collector Current I C (A) 70 6 m 00 1.4 E tf (µs) 40 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) DC Curr ent Gain h F E ø3.2±0.1 pF ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Cut-o ff F requ ency f T (MH Z ) a 50min∗ sTypical Switching Characteristics (Common Emitter) 15 2.0±0.1 b VCE=4V, IC=5A I C – V CE Characteristics (Typical) 4.8±0.2 V 100max VEB=5V IC=25mA 15.6±0.4 9.6 1.8 µA 2.0 ICBO Unit 4.0 V Conditions 19.9±0.3 160 Symbol External Dimensions MT-100(TO3P) 4.0max VCEO Unit (Ta=25°C) Ratings 2SC3519 2SC3519A 100max 5.0±0.2 sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3519 2SC3519A VCBO 160 180 Application : Audio and General Purpose 20.0min LAPT 50 Without Heatsink 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 67
- 70. 2SC3678 Silicon NPN TripleDiffused Planar Transistor (High Voltage Switching Transistor) sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) External Dimensions MT-100(TO3P) (Ta=25°C) Unit VCB=800V 100max µA V IEBO VEB=7V 100max µA V V(BR)CEO IC=10mA 800min A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF I B =50mA 2 3 4 125˚C (Case Temp) –55 ˚C V C E (sat) 0 0.02 0.05 0.1 Collector-Emitter Voltage V C E (V) 1 0 3 t on •t stg • t f – I C Characteristics (Typical) 8 t on • t st g• t f ( µ s) 50 –55˚C 10 0.5 1 3 5 t s tg V C C 250V I C :I B 1 :–I B2 =2:0.3:1Const. 1 tf 0.5 t on 0.2 0.1 0.5 1 0.5 0.3 5 10 P c – T a Derating 80 Maxim um Power Dissip ation P C (W) 500 1000 nk 100 Collector-Emitter Voltage V C E (V) 40 si Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 60 at Collecto r Curr ent I C (A) 500 1000 he 1000 100 ite 500 Collector-Emitter Voltage V C E (V) 0.1 50 50 fin 100 1 Time t(ms) 1 0.5 1.2 In Without Heatsink Natural Cooling 1. 0 ith 0.5 0.8 W Collector Curr ent I C (A) 3 s 1 68 1 5 5 0.6 3 10 10 0µ 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) 0.1 50 Transient Thermal Resistance 25˚C Switching T im e D C Cur r ent Gai n h F E 125˚C 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 4.0max 5˚C Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.01 1 ( 12 0.5 2 p) e Temp) 25˚C (Cas mp) p) –55˚C (Case Tem θ j - a (˚C /W ) 1 V B E (sat) 1 e Te 100mA (V CE =4V) 3 Collector Current I C (A) 200 mA 1 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) Collector-Emitter Saturation Voltage V C E (s at) (V) Base-Emitter Saturation Voltage V B E (s at) (V) Collector Current I C (A) 1max 400mA 2 0 5max 2 5 Cas eT ˚C e m p) 500mA 300mA 0 1max Weight : Approx 6.0g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V CE Characteristics (Typical) 3 –0.5 1.4 E tf (µs) 0.15 –5 C ase Tem 10 IB1 (A) tstg (µs) 0.65 +0.2 -0.1 5.45±0.1 B ton (µs) (Cas 1 5.45±0.1 IB2 (A) VBB2 (V) 250 250 VBB1 (V) 2 3 125˚C RL (Ω) IC (A) ø3.2±0.1 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) VCC (V) a b V 20.0min Tstg 4.0 V 3(Pulse6) 19.9±0.3 7 IC VEBO 2.0±0.1 –55˚C (C 800 4.8±0.2 mp) VCEO 15.6±0.4 9.6 ase Te V 25˚C (C 900 1.8 ICBO VCBO 5.0±0.2 Ratings Symbol Unit 2.0 Conditions Ratings Symbol Application : Switching Regulator and General Purpose 20 3.5 0 Without Heatsink 0 25 50 75 100 12 5 Ambient Temperature Ta(˚C) 150
- 71. 2SC3679 Silicon NPN TripleDiffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings sElectrical Characteristics (Ta=25°C) Ratings Unit VCBO 900 V VCEO 800 Application : Switching Regulator and General Purpose Unit µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V A hFE VCE=4V, IC=2A 10 to 30 4.0 a 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 75typ V 4.0max 20.0min 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 125 2 10 –5 0.3 –1 1max 5max C 1max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 1 0 0 1 2 3 4 C 125˚C ( V C E (sat) 0 0.03 0.05 0.1 0.5 Collector-Emitter Voltage V C E (V) as 1 5 0 10 t on •t stg • t f – I C Characteristics (Typical) 10 125˚C Swi tchi ng T im e 25˚C –55˚C 10 0.5 1 5 5 t s tg V C C 250V I C :I B1 :–I B 2 =2:0.3:1Const. 1 tf 0.5 t on 0.2 0.1 0.5 1m s s 0µ s 5 0.1 ) p) 100 1000 P c – T a Derating 500 Collector-Emitter Voltage V C E (V) 1000 Collector Curr ent I C (A) nk 100 si 0.01 50 50 at Collector-Emitter Voltage V C E (V) 1000 he C) 500 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than1% ite 5 0.1 fin 1 In =2 100 10 100 0.5 0.05 0.05 50 1 ith ( Tc Without Heatsink Natural Cooling 10 Temp 0.5 Time t(ms) 5 s DC 1 1.2 1 M aximum Power Dissipa ti on P C (W) m 1.0 W 0m 0.8 10 µs 10 0.5 0.01 5 1 10 10 5 0.6 2 20 20 10 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) 0.1 Transient Thermal Resistance t on• t s t g • t f (µ s) 50 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 mp) 1 e Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 2 ase Tem –55˚C (Case Temp) 25˚C (Case Temp) e Temp) 125˚C (Cas e Te V B E (sat) 1 –55˚C (C I B =100mA (Case 2 3 (Cas 200mA 4 25˚C 3 2 θ j - a ( ˚ C/W) Collector Current I C (A) 300mA 125˚C 400 mA (V CE =4V) 5 Collector Current I C (A) 500mA 4 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 600mA Collector-Emitter Saturation Voltage V C E (s at ) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 5 Weight : Approx 6.0g a. Part No. b. Lot No. Te m p) 25˚ C –5 5 ˚C 700mA 1.4 E tf (µs) 250 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Collector Curre nt I C ( A) 2 3 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 2.0±0.1 ø3.2±0.1 pF Tstg 4.8±0.2 b IB DC Cur rent Gain h F E 15.6±0.4 9.6 1.8 100max 5.0±0.2 VCB=800V 2.0 ICBO Symbol 19.9±0.3 Ratings VEBO IC External Dimensions MT-100(TO3P) (Ta=25°C) Conditions 5(Pulse10) Symbol 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 69
- 72. 2SC3680 Silicon NPN TripleDiffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol Application : Switching Regulator and General Purpose sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit ICBO VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 3.5 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.2max V Tj 150 °C fT VCE=12V, IE=–2A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 83 3 10 –5 0.45 –1.5 1max 5max Weight : Approx 6.0g a. Part No. b. Lot No. 0 1 2 3 12 0.05 0.1 ˚C –5 0.5 1 10 Swi tchi ng T im e 10 0.05 0.1 0.5 1 5 7 t s tg 5 V C C 250V I C :I B1 :I B2 =2:0.3:–1Const. 1 tf 0.5 t on 0.2 0.1 0.5 s s 0µ s 5 7 0.1 p) ase Tem 100 1000 P c – T a Derating 120 100 500 Collector-Emitter Voltage V C E (V) 1000 nk 0.01 50 si 1000 at 500 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% he 0.1 ite 1 100 fin Collector-Emitter Voltage V C E (V) Temp 10 In 100 ) mp) 1 ith 50 (Case 0.5 Time t(ms) 0.5 0.05 10 1.2 W Without Heatsink Natural Cooling 0.05 70 1 5 1 5 1.0 10 0.5 0.01 2 0.8 1 Ma ximum Po we r Dissipatio n P C ( W) m 10 Co lle ctor Cu rre nt I C ( A) 5 1m 0.6 2 20 20 10 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) 0.1 Transient Thermal Resistance t on• t st g• t f (µ s) C –55˚C 5 0.02 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 50 25˚C e Te 0 5 7 (V C E =4V) 5˚ (Cas 5˚C Collector Current I C (A) h FE – I C Characteristics (Typical) 25˚C 2 –55˚C (C 5 V C E (sat) Collector-Emitter Voltage V C E (V) 12 4 125˚C (C ) 125˚C 0 0.02 4 Collector Current I C (A) ) emp ase T θ j - a ( ˚ C/W) 0 p) ase Tem 25˚C (C emp I B =100mA 2 –55˚C (C eT 200mA ase Temp) as 300 mA 4 6 V B E (sat) 1 (C 500mA (V CE =4V) 7 ˚C 6 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 25 Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 700m A 1.4 E 1max 1A 0.65 +0.2 -0.1 5.45±0.1 C tf (µs) 250 Collector Current I C (A) 2 3 B RL (Ω) 7 2.0±0.1 ø3.2±0.1 5.45±0.1 VCC (V) I C – V CE Characteristics (Typical) 4.8±0.2 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) D C Cur r ent Gai n h F E a 4.0max V 20.0min Tstg 15.6±0.4 9.6 b IB Collecto r Cur rent I C (A) 4.0 IC 19.9±0.3 VEBO Symbol 1.8 Conditions V 5.0±0.2 Unit 900 2.0 Ratings VCBO 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 73. 2SC3830 Silicon NPN TripleDiffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) External Dimensions MT-25(TO220) sElectrical Characteristics (Ta=25°C) Unit ICBO VCB=600V 1max mA V IEBO VEB=10V 100max µA 10 V V(BR)CEO V A hFE VCEO 500 VEBO IC IC=25mA 500min VCE=4V, IC=2A 10.2±0.2 10 to 30 2 A VCE(sat) IC=2A, IB=0.4A PC 50(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.5A 8typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 45typ 12.0min 2.5 2.5 1.4 B C E VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 100 2 10 –5 0.2 –0.4 1max 4.5max Weight : Approx 2.6g a. Part No. b. Lot No. tf (µs) 200 0.5max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 1 0 0 1 2 3 12 5˚ Collector-Emitter Voltage V C E (V) 0.05 0.1 –5 0.5 1 5˚ 25˚C Swi tchi ng T im e –55˚C 10 1 5 6 1 0.5 t on tf 0.1 0.2 0.5 1 5 6 ) emp (Cas 0.5 0.3 1 10 100 1000 P c – T a Derating 50 nk Collector Curr ent I C (A) si 500 600 at 100 Collector-Emitter Voltage V C E (V) he 0.02 50 30 ite 500 600 fin 0.1 Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% In 0.5 40 ith s ms C 1 0.05 Collector-Emitter Voltage V C E (V) 1.4 W 1m 10 D Without Heatsink Natural Cooling 0.05 100 1.2 Time t(ms) 5 0.5 50 1.0 10 s 1 10 0.8 1 M aximum Power Dissipa ti on P C (W) 0µ 0.6 4 20 10 5 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area 20 10 0.2 Collector Current I C (A) Safe Operating Area (Single Pulse) 0.02 7 t s tg V C C 200V I C :I B1 :I B 2 =10:1:–2 Collector Current I C (A) 0.1 Transient Thermal Resistance 7 5 t on• t s t g • t f (µ s) 125˚C 0.5 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 50 0.1 ) 0 5 (V C E =4V) 0.05 mp 1 C Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 2 C V C E (sat) 0 0.02 4 p) ase Tem 125˚C (C 3 –55˚C I B =100mA p) –55˚C (Case Tem Temp) 25˚C (Case Te 2 1 se 200mA 4 se T 3 V B E (sat) (Ca 300mA (Ca 400 mA 4 5 ˚C 60 0m A 25˚C Collector Current I C (A) 5 (V C E =4V) 6 2 125 80 0m A θ j - a (˚ C/W) 1A Collector Current I C (A) 6 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) (C as 2 5 e Te m p) ˚C Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) I C – V CE Characteristics (Typical) Collect or Cur ren t I C (A) 1.35 0.65 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) DC Cur rent Gain h F E b pF Tstg V 2.0±0.1 ø3.75±0.2 a 4.0max IB 0.5max 4.8±0.2 mp) V e Te 600 16.0±0.7 VCBO Symbol Unit 3.0±0.2 Ratings Ratings 8.8±0.2 Conditions 6(Pulse12) Symbol 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 71
- 74. 2SC3831 Silicon NPN TripleDiffused Planar Transistor (High Voltage and High Speed Switching Transistor) sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) (Ta=25°C) Unit 1max mA VCEO 500 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 500min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 100(Tc=25°C) W VBE(sat) IC=5A, IB=1A 1 . 3 max Tj 150 °C fT VCE=12V, IE=–1A 8typ –55 to +150 °C COB VCB=10V, f=1MHz 105typ V MHz 1.05 +0.2 -0.1 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 5 10 –5 0.5 –1.0 1max 4.5max C Weight : Approx 6.0g a. Part No. b. Lot No. 0.5max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 1 0 2 3 Collector Current I C (A) –5 0.05 0.1 0.5 1 5 Switching T im e –5 5˚C 10 1 5 10 5 t s tg V C C 200V I C :I B 1 :I B 2 =10:1:–2 1 0.5 t on tf 0.1 0.2 0.5 s 5 10 0.1 10 Co lle ctor Cu rr ent I C (A) ) mp) Temp nk Collector-Emitter Voltage V C E (V) 500 600 si 100 50 at Without Heatsink Natural Cooling L=3mH I B 2 =–0.5A Duty:less than 1% he 0.01 50 (Case P c – T a Derating ite Collector-Emitter Voltage V C E (V) 500 600 1000 fin 100 100 In 0.05 50 1 ith C 1 0.5 1 0.05 0.02 8 10 Tem 0.5 W ms D Without Heatsink Natural Cooling 1.2 100 5 0.5 1.0 Time t(ms) 10 1 0.8 1 Maxim um Power Dissipatio n P C ( W) s 0µ 10 5 10 0.6 2 30 30 72 1 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) 0.1 Transient Thermal Resistance t on • t st g• t f (µ s) 25˚C 1m 0 Base-Emittor Voltage V B E (V) 10 125˚C 0.5 p) 0 10 t on •t stg • t f – I C Characteristics (Typical) 50 e Te C (V C E =4V) 0.1 se 2 –55˚C 5˚ Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 4 25˚C C 5˚ V C E (sat) Collector-Emitter Voltage V C E (V) 5 0.02 6 (Ca ) mp 12 0 0.02 4 (Case ) Temp θ j- a ( ˚C/W) 0 125˚C 8 ˚C 100mA 2 p) ase Tem 25˚C (C Te 200mA 4 e Temp) –55˚C (Cas se 400 mA 6 V B E (sat) 1 (C a 60 0m A ˚C IB Collector Current I C (A) 8 (V CE =4V) 10 25 A Collector-Emitter Saturation Voltage V C E (s at ) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 800 mA =1 .2 1A 125 I C – V CE Characteristics (Typical) 1.4 E tf (µs) 40 0.65 +0.2 -0.1 5.45±0.1 B 200 D C Cur r ent Gai n h F E 2 3 pF VCC (V) Collecto r Curr ent I C (A) ø3.2±0.1 V sTypical Switching Characteristics (Common Emitter) 10 2.0±0.1 (Cas Tstg 4.8±0.2 b 0.5max PC a 4.0max IC 20.0min VEBO 15.6±0.4 9.6 1.8 VCB=600V Symbol 5.0±0.2 Ratings ICBO 2.0 Conditions V 4.0 Unit 600 19.9±0.3 Ratings VCBO 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 75. 2SC3832 Silicon NPN TripleDiffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) External Dimensions MT-25(TO220) sElectrical Characteristics Symbol (Ta=25°C) Conditions Ratings Unit ICBO VCB=500V 100max µA V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ 0.65 +0.2 -0.1 2.5 2.5 1.4 B C E VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 66.7 3 10 –5 0.3 –0.6 1max 3max 0.5max 0 1 2 3 12 0.05 Collector-Emitter Voltage V C E (V) t o n • t s t g• t f ( µ s) 125˚ C 25˚C Sw it ching Time –30 ˚C 10 0.5 –5 0.1 0.5 1 5˚ 1 5 7 5 1 0.5 t on tf 0.1 0.2 0.5 1 5 p) Tem 0.3 1 P c – T a Derating 500 nk 100 si 50 Collector-Emitter Voltage V C E (V) at 10 30 he Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% 40 ite Co lle ctor Cu rren t I C ( A) 1000 fin 500 100 In 100 Collector-Emitter Voltage V C E (V) 0.1 5 se T 10 ith 0.1 (Ca 0.5 W Without Heatsink Natural Cooling 1 0.5 1.2 50 5 1 1.0 Time t(ms) 10 s 0.8 1 Maxim um Power Dissipatio n P C ( W) 0µ 0.6 4 Reverse Bias Safe Operating Area 5 50 0.4 θ j-a – t Characteristics 20 10 10 0.2 Collector Current I C (A) 20 5 0 Base-Emittor Voltage V B E (V) V C C 200V I C :I B1 :–I B 2 =10:1:2 Safe Operating Area (Single Pulse) 0.5 se 0 5 7 t s tg Collector Current I C (A) 10 (Ca C 10 50 0.1 2 t on •t stg • t f – I C Characteristics (Typical) (V C E =4V) 0.05 C 5˚ Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 ) Temp V C E (sat) 0 0.02 4 (Case θ j - a (˚ C/W) 0 125˚C 4 ˚C 2 e Temp) 25˚C (Cas 25˚C I B =100mA e Temp) –55˚C (Cas 125 200mA 1 Transient Thermal Resistance 4 6 V B E (sat) Collector Current I C (A) 300mA (V C E =4V) 7 as e 2 5 Tem p) ˚C 400mA I C – V BE Temperature Characteristics (Typical) (I C /I B =5) (C Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 0m A 60 0m A 80 6 Weight : Approx 2.6g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V CE Characteristics (Typical) 7 Collector Current I C (A) 1.35 4.0max 12.0min V sTypical Switching Characteristics (Common Emitter) D C Cur r ent Gai n h F E b pF Tstg Collecto r Curr ent I C (A) ø3.75±0.2 a ) IC mp) VEBO 2.0±0.1 e Te 400 4.8±0.2 (Cas VCEO 10.2±0.2 –55˚C V 3.0±0.2 500 emp VCBO 16.0±0.7 Unit 8.8±0.2 Ratings Symbol 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 73
- 76. 2SC3833 Silicon NPN TripleDiffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) External Dimensions MT-100(TO3P) Symbol sElectrical Characteristics Symbol (Ta=25°C) Ratings Conditions Unit 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 ø3.2±0.1 b IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.3max V Tj 150 °C fT VCE=12V, IE=–1A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF 3 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 28.5 7 10 –5 0.7 –1.4 1.0max 3.0max C Weight : Approx 6.0g a. Part No. b. Lot No. 0.5max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 2 0 0 1 2 3 12 5˚ 0.05 0.1 Collector-Emitter Voltage V C E (V) –5 0.5 1 5 5˚ 0 10 t on •t st g • t f – I C Characteristics (Typical) 8 t o n • t s t g• t f ( µ s) 50 25˚C Swit ching Time –30˚C 10 1 5 10 12 t s tg V C C 200V I C :I B1 :–I B2 =10:1:2 1 0.5 t on tf 0.1 0.5 1 10 1 10 ) mp) P c – T a Derating 100 10 50 100 Collector-Emitter Voltage V C E (V) 500 nk 0.01 5 si 500 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% 50 at 0.1 he Co lle ctor Cu rr ent I C ( A) 1 ite Collector-Emitter Voltage V C E (V) 1000 fin 100 100 In ) 0.01 74 0.1 Time t(ms) 0.5 0.05 50 0.5 ith C 0.05 10 1.2 W 25 Without Heatsink Natural Cooling 5 10 5 0.5 0.1 5 10 ms c= (T 1 1.0 s 1ms 10 DC 5 0.8 1 30 0µ 0.6 2 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.4 Collector Current I C (A) Collector Current I C (A) 30 0.2 θ j-a – t Characteristics M aximu m Power Dissipat io n P C (W) 0.5 5 Transient Thermal Resistance 125˚C 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 p) 2 C Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 4 C V C E (sat) 0 0.02 4 (C Temp 125˚C 6 Tem ) emp ase T (Case I B =100mA e Temp) 25˚C (Cas 8 se 200mA 4 Temp) (Ca 6 –55˚C (Case 25˚C 400m A 1 ˚C 8 10 V B E (sat) θ j - a (˚ C/W) Collector Current I C (A) 60 0m A 125 80 0m A 10 (V CE =4V) 12 Collector Current I C (A) A 1000m as e 2 5 Temp ) ˚C 12 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) (C Collector-Emitter Saturation Voltage V C E (s at ) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) I C – V CE Characteristics (Typical) 1.4 E tf (µs) 200 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Collecto r Curr ent I C (A) 2 4.0max 20.0min V –55˚C Tstg DC C urrent G ain h FE a 2.0±0.1 e Te IC 4.8±0.2 (Cas VEBO 15.6±0.4 9.6 1.8 VCB=500V 5.0±0.2 ICBO 2.0 V 4.0 Unit 500 19.9±0.3 Ratings VCBO 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 77. 2SC3834 Silicon NPN TripleDiffused Planar Transistor (Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Application : Humidifier, DC-DC Converter, and General Purpose sElectrical Characteristics Symbol External Dimensions MT-25(TO220) (Ta=25°C) Ratings Unit ICBO VCB=200V 100max µA VCEO 120 V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 110typ b 4.0max 12.0min 2.5 2.5 1.4 B C E VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 16.7 3 10 –5 0.3 –0.6 0.5max 3.0max Weight : Approx 2.6g a. Part No. b. Lot No. tf (µs) 50 0.5max V CE ( sat ) – I B Characteristics (Typical) 2 I B =10mA 1 0 0 1 2 3 0 0.005 0.01 0.05 0.1 0.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) Typ 100 50 1 5 1 2 5 ˚C 25˚ 100 Transient Thermal Resistance DC C urrent G ain h FE 300 C –30 ˚C 50 20 0.01 7 0.05 Collector Current I C (A) 0.1 0.5 1 5 7 20 10 1 10 0m Ma xim um Powe r Dissipation P C ( W) Collector Curr ent I C (A) ) nk Collector-Emitter Voltage V C E (V) 200 si 120 at 50 he 10 30 ite 0.05 fin Without Heatsink Natural Cooling In 0.5 40 ith 1 5 1000 s 0.1 –5 100 W 10 Emitter Current I E (A) 0.3 P c – T a Derating ms 20 –1 0.5 50 10 5 –0.5 1 Time t(ms) 10 –0.05 –0.1 θ j-a – t Characteristics 4 Safe Operating Area (Single Pulse) (V C E =12V) 30 1.0 1.1 0.5 Collector Current I C (A) f T – I E Characteristics (Typical) 0 –0.01 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 1 Base Current I B (A) h FE – I C Characteristics (Typical) mp) 1 4 200 0.1 p) 2 Collector-Emitter Voltage V C E (V) 20 0.02 3 Temp 1 4 e Te 20 mA 5A 3 3A 40m Tem A 4 5 se 60mA (Cas 5 6 2 (Ca mA A Collector Current I C (A) 100 (V CE =4V) 7 25˚C 6 2.6 ˚C 1 A 50m 125 A θ j- a (˚ C/W) m 200 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) 7 I C= 1 Collector-Emitter Saturation Voltage V C E (s a t) (V ) I C – V CE Characteristics (Typical) Cut- off F req uency f T (M H Z ) 1.35 0.65 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) DC C urrent G ain h FE ø3.75±0.2 a pF Tstg V 2.0±0.1 (Case IC 4.8±0.2 –30˚C VEBO 10.2±0.2 3.0±0.2 Conditions V 16.0±0.7 Unit 200 8.8±0.2 Ratings VCBO Symbol 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 75
- 78. 2SC3835 Silicon NPN TripleDiffused Planar Transistor (Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Ratings VCBO 200 V VCEO 120 sElectrical Characteristics Unit Symbol Application : Humidifier, DC-DC Converter, and General Purpose Unit V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 110typ pF V 20.0min 4.0max 2 3 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 3 10 –5 0.3 –0.6 0.5max 3.0max C Weight : Approx 6.0g a. Part No. b. Lot No. 0.5max V CE ( sat ) – I B Characteristics (Typical) 1 0 0 1 2 3 0 0.005 0.01 4 0.05 0.1 0.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) DC C urrent G ain h FE 300 Typ 100 50 1 5 1 2 5 ˚C 25˚ 100 Transient Thermal Resistance 200 0.5 C –30 ˚C 50 20 0.01 7 0.05 Collector Current I C (A) 0.1 0.5 1 5 7 20 0.4 0µ si nk M aximu m Power Dissip ation P C (W) at Co lle ctor Cu rre nt I C (A) 40 he 76 –5 ite –1 fin Without Heatsink Natural Cooling In 0.5 50 ith 1 60 W ms –0.5 1000 2000 100 s 30 20 10 Without Heatsink 0.05 Emitter Current I E (A) 10 P c – T a Derating 0.1 –0.05 –0.1 1 70 10 10 ) 0.5 Time t(ms) 10 5 Temp 1 10 20 mp) θ j-a – t Characteristics 5 Safe Operating Area (Single Pulse) (V C E =12V) 30 1.0 1.1 0.5 Collector Current I C (A) f T – I E Characteristics (Typical) 0 –0.01 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1 Base Current I B (A) h FE – I C Characteristics (Typical) e Te 1 Collector-Emitter Voltage V C E (V) 20 0.02 p) 2 (Case I B =10mA 3 –30˚C 2 1 4 Tem 20 mA 5A 3 3A 40m se A 4 5 (Cas 60mA (Ca 5 6 2 25˚C mA A Collector Current I C (A) 100 (V C E =4V) 7 ˚C 6 2.6 125 1 A 50m θ j - a (˚ C/W) 2 A 00m I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) 7 I C= 1 Collector-Emitter Saturation Voltage V C E (s a t) (V ) I C – V CE Characteristics (Typical) 1.4 E tf (µs) 16.7 0.65 +0.2 -0.1 5.45±0.1 B RL (Ω) 50 DC C urrent G ain h FE ø3.2±0.1 5.45±0.1 VCC (V) 2.0±0.1 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) Cut-o ff Fr equ ency f T (MH Z ) a 4.8±0.2 b IB Tstg 15.6±0.4 9.6 1.8 µA 5.0±0.2 100max 2.0 VCB=200V 4.0 ICBO 19.9±0.3 Ratings VEBO IC External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Symbol 5 10 50 120 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 79. 2SC3851/3851A Silicon NPN EpitaxialPlanar Transistor (Complement to type 2SA1488/A) µA 100max ICBO 80 VCB= IEBO 4 A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 60typ ø3.3±0.2 a b pF Tstg 3.9 V 13.0min IC=25mA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 12 6 2 10 –5 200 –200 0.2typ 1typ 5mA 0 0 1 2 3 4 5 0 0.005 0.01 0.05 0.1 0.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) Typ 100 50 1 125˚C 25˚ C 100 – 3 0 ˚C 50 20 0.01 4 0.05 f T – I E Characteristics (Typical) 0.5 1 4 p) Tem 10 100 10 0m m s s s DC at si nk –4 he –0.5 –1 ite Without Heatsink Natural Cooling fin 0.5 20 In 1 ith Collector Cur rent I C (A) 10 10 Without Heatsink 0.05 0 1000 P c – T a Derating 0.1 –0.1 1 W 10 Emitter Current I E (A) 1 30 5 –0.005 5 0.5 10 30 Typ 1.2 Time t(ms) 1m 20 1.0 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =12V) 40 0.1 0.5 Collector Current I C (A) Collector Current I C (A) Ma xim um Powe r Dissipat io n P C (W) 0.5 Transient Thermal Resistance DC Curr ent Gain h FE 500 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) DC Curr ent Gain h FE 0 1 Base Current I B (A) 500 se T I C =1 A Collector-Emitter Voltage V C E (V) 20 0.01 se 1 2A 6 h FE – I C Characteristics (Typical) (Ca 3A 2 (Ca 10mA 1 0.5 3 25˚C 20mA 1.0 ˚C 30mA 125 Collector Current I C (A) 40mA 3 (V CE =4V) 4 Collector Current I C (A) IB =7 50mA I C – V BE Temperature Characteristics (Typical) θ j - a (˚C/W) 0m A 60 m A 2 B C E V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 4 Cu t-off Fr eque ncy f T ( MH Z ) Weight : Approx 2.0g a. Part No. b. Lot No. 0.3typ I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 mp) IC V µA 100max VEB=6V e Te V (Cas 6 100 –30˚C VEBO 4.0±0.2 V 4.2±0.2 2.8 c0.5 0.8±0.2 V 80 10.1±0.2 ) 100 60 Unit emp 80 VCEO Conditions 8.4±0.2 VCBO Symbol 16.9±0.3 Unit External Dimensions FM20(TO220F) (Ta=25°C) Ratings 2SC3851 2SC3851A ±0.2 sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3851 2SC3851A Application : Audio and PPC High Voltage Power Supply, and General Purpose 3 5 10 50 Collector-Emitter Voltage V C E (V) 80 0 0 50 100 150 Ambient Temperature Ta(˚C) 77
- 80. 2SC3852/3852A High hFE LOW VCE(sat) Silicon NPN Epitaxial Planar Transistor ICBO VCB= IC 3 A V(BR)CEO VEB=6V V µA 100max IC=25mA 60min 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF Tstg 13.0min 3.9 IB ø3.3±0.2 a b 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 20 20 1.0 10 –5 15 –30 0.8typ 3.0typ 0.5mA 0 0 1 2 3 4 5 0.5 0 0.001 0.005 0.01 0.05 0.1 0.5 (V C E =4V) 125˚C Transient Thermal Resistance D C Cur r ent Gai n h F E 2000 1000 Typ 500 0.5 1 3 25 ˚C 500 – 3 0 ˚C 100 0.01 0.1 Collector Current I C (A) 0.5 1 3 p) 1 10 100 P c – T a Derating s DC nk –2 si –1 10 Without Heatsink 0.05 –0.5 at 0.1 he Without Heatsink Natural Cooling ite 0.5 20 fin 1 In Maxim um Power Dissipatio n P C ( W) m s ith Collecto r Curr ent I C (A) 10 0m W 10 1000 Time t(ms) s Typ 78 V CB =10V I E =–2A 1m 20 –0.05 –0.1 1 30 10 Emitter Current I E (A) 5 0.5 10 5 0 –0.005 –0.01 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =12V) 1.0 1.1 0.5 Collector Current I C (A) f T – I E Characteristics (Typical) 30 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 2000 D C Cur r ent Gai n h F E 0 1 Base Current I B (A) (V C E =4V) 0.1 em 2A I C =1A 6 h FE – I C Characteristics (Typical) 100 0.01 eT 3A Collector-Emitter Voltage V C E (V) 1000 1 (Cas 1mA 2 Cas 2mA 1 1.0 25˚C 3mA ˚C ( 5mA 2 125 8mA (V CE =4V) 3 Collector Current I C (A) A I C – V BE Temperature Characteristics (Typical) 1.0 θ j - a ( ˚C/W) =1 Collector-Emitter Saturation Voltage V C E (sa t) (V ) Collector Current I C (A) IB 2m B C E V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) Cu t-of f Fr eque ncy f T (MH Z ) Weight : Approx 2.0g a. Part No. b. Lot No. 1.2typ 3 2.4±0.2 2.2±0.2 ) IEBO Temp V (Case 6 µA 100 –30˚C VEBO 80 4.0±0.2 V 0.8±0.2 V 80 4.2±0.2 2.8 c0.5 ±0.2 100 60 10.1±0.2 mp) 80 VCEO Unit e Te VCBO Conditions 16.9±0.3 Symbol Unit External Dimensions FM20(TO220F) (Ta=25°C) Ratings 2SC3852 2SC3852A 10max 8.4±0.2 sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3852 2SC3852A Application : Driver for Solenoid and Motor, Series Regulator and General Purpose 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 50 100 Ambient Temperature Ta(˚C) 150
- 81. 2SC3856 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SA1492) sAbsolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose sElectrical Characteristics Symbol External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V V V(BR)CEO 15 A hFE VCE=4V, IC=3A 50min∗ a VCE(sat) IC=5A, IB=0.5A 2.0max V W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 300typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 4 10 10 –5 1 –1 0.5typ 1.8typ Weight : Approx 6.0g a. Part No. b. Lot No. 0 1 0 2 3 I C =10A 0 4 0 0.5 1.0 1.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 300 200 Typ 50 1 5 100 25˚C 50 –30˚C 20 0.02 10 15 Collector Current I C (A) 0.1 0.5 1 5 10 15 10 10 Typ 0.1 1 10 P c – T a Derating 130 s s s C at si nk Without Heatsink Natural Cooling he 0.5 ite 1 fin 5 100 In Collecto r Cur ren t I C (A) 0m 1000 2000 ith 10 D 3m m 100 Time t(ms) W 10 20 mp) 0.5 40 30 Temp) e Te 1 Safe Operating Area (Single Pulse) (V C E =12V) 2 3 Collector Current I C (A) f T – I E Characteristics (Typical) (Case 1 θ j-a – t Characteristics Maxim um Power Dissi pation P C (W) 0.5 Transient Thermal Resistance DC C urrent G ain h FE 125˚C 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 20 0.02 0 2.0 Base Current I B (A) h FE – I C Characteristics (Typical) (Cas 5A Collector-Emitter Voltage V C E (V) 100 5 –30˚C I B =20mA 1 25˚C 50mA 5 10 mp) 100 mA 2 e Te 20 0m A 10 Cas A ˚C ( 300m (V C E =4V) 15 3 125 mA Collector Current I C (A) 0 50 I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 1A 7 m 00 1.4 E 0.6typ 15 Collector Current I C (A) C tf (µs) 40 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Cut -off Fre quen cy f T ( MH Z ) 2 3 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 2.0±0.1 ø3.2±0.1 4.0max A 130(Tc=25°C) 20.0min 4 PC Tstg 4.8±0.2 b IB D C Cur r ent Gai n h F E 4.0 6 IC 19.9±0.3 VEBO 15.6±0.4 9.6 1.8 Conditions V 5.0±0.2 Unit 200 2.0 Ratings VCBO 50 Without Heatsink 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.1 3 10 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 79
- 82. 2SC3857 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SA1493) sAbsolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose sElectrical Characteristics External Dimensions MT-200 (Ta=25°C) Conditions Ratings Unit ICBO VCB=200V 100max µA V IEBO VEB=6V 100max µA IC=50mA 200min V Ratings Unit VCBO 200 V VCEO 200 Symbol 24.4±0.2 2.1 2-ø3.2±0.1 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB 5 A VCE(sat) IC=10A, IB=1A 3.0max V VCE=12V, IE=–0.5A 20typ MHz VCB=10V, f=1MHz 250typ pF 9 W 150 °C COB –55 to +150 °C 21.4±0.3 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg a b 2 4.0max 150(Tc=25°C) Tj 20.0min PC fT 7 VEBO 3 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 12 5 10 –5 0.5 –0.5 0.3typ 2.4typ C E Weight : Approx 18.4g a. Part No. b. Lot No. tf (µs) 60 0.4typ 0 0 1 2 3 0 1 2 3 (V C E =4V) Typ 100 50 5 Transient Thermal Resistance DC C urrent G ain h FE 300 125˚C 25˚C 100 –30˚C 50 20 0.02 10 15 Collector Current I C (A) 0.1 0.5 10 15 1 10ms s 100 Collector-Emitter Voltage V C E (V) 300 nk 10 si 2 80 at Without Heatsink Natural Cooling he 0.5 ite 1 120 fin 5 In Co lle ctor Cu rre nt I C ( A) m s 0.1 –10 1000 ith 10 10 C 3m s 20 100 P c – T a Derating 0m Typ ) 10 W 30 Emitter Current I E (A) 0.1 Maxim um Power Dissi pation P C (W) D –1 0.5 Time t(ms) 10 Cu t-off Fre quen cy f T ( MH Z ) 5 1 160 20 80 1 2 50 40 2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =12V) –0.1 1 Collector Current I C (A) f T – I E Characteristics (Typical) 0 –0.02 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 300 1 0 4 Base Current I B (A) (V C E =4V) 0.5 p) 5A 0 4 h FE – I C Characteristics (Typical) 0.1 Tem I C =15A 10A Collector-Emitter Voltage V C E (V) 20 0.02 5 Temp 1 (Case I B =50mA –30˚C 5 10 se 10 0m A 2 (Ca 20 0m A 10 (V CE =4V) 15 3 ˚C A 125 400m 25˚C mA Collector Current I C (A) 0 60 I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) 1A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) 1. 5A 15 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) DC C urrent G ain h FE 6.0±0.2 36.4±0.3 40 5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2000
- 83. 2SC3858 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SA1494) Symbol sElectrical Characteristics Conditions Ratings Unit VCB=200V 100max µA VEB=6V 100max µA IC=50mA Symbol External Dimensions MT-200 (Ta=25°C) 200min V Ratings Unit VCBO 200 V ICBO VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A 50min∗ IB 5 A VCE(sat) IC=10A, IB=1A 2.5max V PC 200(Tc=25°C) W fT VCE=12V, IE=–1A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 300typ pF –55 to +150 °C ∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180) Tstg 24.4±0.2 7 21.4±0.3 20.0min a b 2 3 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 4 10 10 –5 1 –1 0.5typ 1.8typ C Weight : Approx 18.4g a. Part No. b. Lot No. 0.6typ I B =20mA 0 0 1 2 3 0 0 1 2 (V C E =4V) 200 Typ 50 5 100 25˚C –30˚C 50 10 0.02 10 17 Collector Current I C (A) 0.1 0.5 1 5 10 17 m Typ 1 2000 Collector-Emitter Voltage V C E (V) 300 nk 100 si 10 at 2 he Without Heatsink Natural Cooling 120 ite 0.5 fin 1 In 5 160 ith Co lle ctor Cu rre nt I C ( A) C 3 10 ms m s 0.1 –10 1000 W 10 s s 10 100 P c – T a Derating 0m 20 ) 10 Time t(ms) 10 D Emitter Current I E (A) 0.1 200 20 –1 0.5 50 30 –0.1 1 Safe Operating Area (Single Pulse) (V C E =12V) 2 2 Collector Current I C (A) f T – I E Characteristics (Typical) 0 –0.02 1 θ j-a – t Characteristics Maxim um Power Dissi pation P C (W) 1 Transient Thermal Resistance DC C urrent G ain h FE 125˚C 0.5 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 300 0.1 0 3 Base Current I B (A) (V C E =4V) 20 0.02 p) I C =15A 10A 4 h FE – I C Characteristics (Typical) 100 5 5A Collector-Emitter Voltage V C E (V) Temp 1 (Case 50mA 5 10 Tem 100mA 2 –30˚C 20 0m A 10 15 se A (Ca 300m (V C E =4V) 17 3 ˚C mA 25˚C 500 125 mA Collector Current I C (A) 15 0 70 I C – V BE Temperature Characteristics (Typical) θ j - a ( ˚ C/W) 1. 5A 1A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 17 3.0 +0.3 -0.1 E tf (µs) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 B 40 Collector Current I C (A) 9 1.05 +0.2 -0.1 VCC (V) DC C urrent G ain h FE 2.1 2-ø3.2±0.1 sTypical Switching Characteristics (Common Emitter) Cu t-off Fre quen cy f T ( MH Z ) 6.0±0.2 36.4±0.3 4.0max sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 80 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 81
- 84. 2SC3890 Silicon NPN TripleDiffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Unit 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=3A 10 to 30 ICBO V 7(Pulse14) A IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 3.9 V 13.0min Tstg RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 66 3 10 –5 0.3 –0.6 1max 3max 0.5max 2 1 2 3 12 0.05 0.1 Collector-Emitter Voltage V C E (V) t o n• t s t g • t f (µ s) 50 Swi tchi ng T im e Typ 10 0.5 –5 0.5 1 5˚ 1 5 7 0.5 t on tf 0.1 0.2 p) 0.5 1 0.4 5 7 emp 0.5 0.3 1 10 100 1000 P c – T a Derating fin ite he at si nk Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% 20 In 1 ith Collector Curr ent I C (A) se T 1 W 5 0.5 1.2 30 10 Without Heatsink Natural Cooling 1.0 Time t(ms) s 1 0.8 5 Reverse Bias Safe Operating Area 5 0.6 θ j-a – t Characteristics 20 0µ ) Tem 0.2 Collector Current I C (A) 20 0.5 0 Base-Emittor Voltage V B E (V) 1 Safe Operating Area (Single Pulse) 10 se 0 5 7 t s tg V C C 200V I C :I B1 :I B 2 =10:1:–2 Collector Current I C (A) 10 (Ca C 7 5 70 0.1 2 t on •t stg • t f – I C Characteristics (Typical) (V C E =4V) 0.05 C 5˚ Collector Current I C (A) h FE – I C Characteristics (Typical) 7 0.02 T V C E (sat) 0 0.02 4 (Case 4 θ j - a (˚ C/W) 0 125˚C emp) M aximu m Power Dissi pation P C (W) 0 25 (Ca 100mA Temp) ˚C (Case ˚C 200 mA e Temp) –55˚C (Cas 125 4 1 25˚C 300 mA 6 V B E (sat) Collector Current I C (A) 40 0m A Transient Thermal Resistance I B= 6 (V C E =4V) 7 as e 2 5 Tem p) ˚C mA 800 A I C – V BE Temperature Characteristics (Typical) (I C /I B =5) (C Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 7 600m B C E V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V CE Characteristics (Typical) 2.4±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) 200 Collector Current I C (A) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 VCC (V) DC Cur rent Gain h FE 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) Co lle ctor Cu rre nt I C (A) ø3.3±0.2 a b mp) V 10 e Te 400 VEBO 4.2±0.2 2.8 c0.5 (Cas VCEO 10.1±0.2 –55˚C V 0.8±0.2 VCB=500V 500 8.4±0.2 Ratings VCBO IC External Dimensions FM20(TO220F) (Ta=25°C) Conditions Unit 4.0±0.2 Symbol Ratings 16.9±0.3 Symbol ±0.2 sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 10 Without Heatsink 2 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 82 500 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 85. 2SC3927 Silicon NPN TripleDiffused Planar Transistor (High Voltage Switchihg Transistor) sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Symbol Ratings Unit 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse15) A hFE VCE=4V, IC=5A 10 to 28 ø3.2±0.1 b IB 5 A VCE(sat) IC=5A, IB=1A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=5A, IB=1A 1.2max V Tj 150 °C fT VCE=12V, IE=–1A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF 3 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 50 5 10 –5 0.75 –1.5 1max 5max C Weight : Approx 6.0g a. Part No. b. Lot No. 0.5max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 0 1 2 3 – 0.5 1 5 10 t o n • t s t g• t f ( µ s) 25 ˚C Swit ching Time –5 5˚ C 10 1 5 10 t s tg 5 V C C 250V I C :I B1 :–I B 2 =10:1.5:3 1 0.5 t on tf 0.1 0.2 0.5 s 10 s 1 5 10 ) Temp) 0.5 0.1 1 10 100 1000 P c – T a Derating 120 Collector-Emitter Voltage V C E (V) 1000 nk 500 si 100 at 0.02 50 he Collector-Emitter Voltage V C E (V) 500 600 ite 100 fin 0.05 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% In 0.1 ith 0.05 1 0.5 100 W Without Heatsink Natural Cooling 50 1.2 Time t(ms) 5 1 0.02 10 1.0 10 0µ 0.5 0.1 0.8 1 M aximu m Power Dissipa tion P C (W) 1m Co lle ctor Cu rr ent I C ( A) ms 0.6 θ j-a – t Characteristics 20 10 0.4 2 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 20 DC 0.2 Collector Current I C (A) Collector Current I C (A) 5 Transient Thermal Resistance 125˚ C 10 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 50 0.5 p) 0 10 (V C E =4V) 0.1 em C Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 eT ˚C ( 2 ˚ 55 25˚C C 5˚ V C E (sat) 0.05 0.1 Collector-Emitter Voltage V C E (V) 5 0.02 4 Cas ) Temp 12 0 0.02 4 (Case θ j- a (˚ C/W) 0 125˚C 6 125 I B =100mA 2 p) ase Tem 25˚C (C 8 Collector Current I C (A) 200mA 4 e Temp) –55˚C (Cas ) 400m A 6 V B E (sat) 1 mp Collector Current I C (A) 60 0m A Te 80 0m A 8 (V CE =4V) 10 se 1A (C a 2A ˚C 1. I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 25 10 Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) I C – V CE Characteristics (Typical) 1.4 E tf (µs) 250 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Co lle ctor Cu rr ent I C (A) 2 4.0max V 20.0min Tstg DC C urrent G ain h FE a 2.0±0.1 Temp IC 4.8±0.2 (Case VEBO 15.6±0.4 9.6 1.8 VCB=800V 5.0±0.2 ICBO 2.0 V 4.0 Unit 900 19.9±0.3 Ratings VCBO (Case Symbol –55˚C sAbsolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 83
- 86. 2SC4020 Silicon NPN TripleDiffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings sElectrical Characteristics (Ta=25°C) Ratings Unit VCBO 900 V VCEO 800 Application : Switching Regulator and General Purpose Symbol Unit 100max µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse 6) A hFE VCE=4V, IC=0.7A 10 to 30 10.2±0.2 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 40typ 4.0max 12.0min 1.35 0.65 +0.2 -0.1 2.5 2.5 1.4 B C E RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 357 0.7 10 –5 0.1 –0.35 1max 5max 1max I B =20mA 0 0 1 2 3 0.1 Collector-Emitter Voltage V C E (V) 0.5 1 t on •t stg • t f – I C Characteristics (Typical) 6 5 t o n• t s t g• t f (µ s) 50 125˚C 25˚C Sw it ching Time –30˚C 10 5 0.1 0.5 1 3 t s tg VCC 250V IC:IB1:– IB2=2:0.3:1 Const. 1 tf 0.5 t on 0.2 0.1 0.5 3 1 0.5 0.3 P c – T a Derating 50 Collecto r Cur rent I C (A) Ma xim um Powe r Dissipat io n P C (W) 500 Collector-Emitter Voltage V C E (V) 1000 nk 100 30 si Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 40 at 0.1 50 1000 2000 he Collector-Emitter Voltage V C E (V) 1000 100 ite 500 10 fin 100 1 Time t(ms) 1 0.5 1.2 In Without Heatsink Natural Cooling 1.0 ith 0.5 0.8 W 1 84 1 5 s 0.6 5 10 5 0.1 50 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0µ 0.2 Collector Current I C (A) Collector Current I C (A) 10 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 mp) 0 5 Collector Current I C (A) h FE – I C Characteristics (Typical) 2 0.02 1 V C E (sat) 0 0.03 0.05 4 e Te V B E (sat) mp) ase Tem p) 60mA 1 1 ase Te 100mA 2 (Cas 140mA 25˚C (C 200 mA 2 (V C E =4V) 3 125˚C Collector Current I C (A) 300m A 2 Collector Current I C (A) 40 0m A θ j- a ( ˚C/W) 0 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) Transient Thermal Resistance 50 Weight : Approx 2.6g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) mA Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 3 DC C urrent G ain h FE b pF VCC (V) Collecto r Cur rent I C (A) ø3.75±0.2 a V sTypical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 2.0±0.1 –30˚C (C Tstg 4.8±0.2 3.0±0.2 VCB=800V 16.0±0.7 ICBO 8.8±0.2 Ratings VEBO IC External Dimensions MT-25(TO220) (Ta=25°C) Conditions Symbol 20 10 2 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 87. 2SC4024 High hFE LOW VCE(sat) Silicon NPN Epitaxial Planar Transistor External Dimensions FM20(TO220F) Unit 10max µA IEBO VEB=15V 10max µA V(BR)CEO IC=25mA 50min V VCE=4V, IC=1A 300 to 1600 ICBO V IC 10 A hFE A VCE(sat) IC=5A, IB=0.1A 0.5max V 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 24typ MHz Tj 150 °C COB VCB=10V, f=1MHz 150typ pF –55 to +150 °C Tstg 3.9 3 PC 13.0min IB 1.35±0.15 1.35±0.15 RL (Ω) IC (A) IB1 (A) IB2 (A) ton (µs) tstg (µs) 20 4 5 0.1 –0.1 0.5typ 2.0typ 0.5typ 0 2 4 6 0.01 0.1 1 h FE – I C Temperature Characteristics (Typical) (V C E =4V) Typ 500 1 5 10 1 2 5 ˚C 500 Transient Thermal Resistance DC C urrent G ain h FE 1000 25˚C –30 100 0.02 ˚C 0.1 Collector Current I C (A) 0.5 1 5 10 10 1 10 5 1000 P c – T a Derating 0m m s s at 150x150x2 nk 10 si Collector-Emitter Voltage V C E (V) 100 he 50 ite 10 20 fin 5 In Without Heatsink Natural Cooling 30 ith 1 3 Natural Cooling Silicone Grease Heatsink: Aluminum in mm s 0.2 –10 100 Time t(ms) DC 0.5 –5 ) 10 W Co lle ctor Cu rre nt I C ( A) 10 Emitter Current I E (A) ) 0.3 Maxim um Power Dissi pation P C (W) Typ 10 emp 0.5 40 1m –1 Te 1 30 20 1.2 4 Safe Operating Area (Single Pulse) 30 1.0 θ j-a – t Characteristics (V C E =12V) –0.5 0.5 Collector Current I C (A) f T – I E Characteristics (Typical) 0 –0.05 –0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 mp 0 2 Base Current I B (A) 1000 se T I C= 1 A 0 0.002 h FE – I C Characteristics (Typical) 0.1 se 2 5A Collector-Emitter Voltage V C E (V) 100 0.02 4 3A θ j- a ( ˚ C/W) 0 10A (Ca 5mA 2 0.5 6 (Ca 10mA 4 1.0 25˚C 15mA 8 ˚C 20m A 6 (V CE =4V) 10 1.5 125 30mA 25mA I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s a t) (V ) I B =35m A 8 B C E V CE ( sat ) – I B Characteristics (Typical) 10 Collector Current I C (A) Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 VCC (V) Cut- off Fr equ ency f T (MH Z ) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) DC C urrent G ain h FE ø3.3±0.2 a b mp) V 15 e Te 50 VEBO 4.2±0.2 2.8 c0.5 (Cas VCEO 10.1±0.2 –30˚C V 4.0±0.2 Ratings VCB=100V Unit 100 0.8±0.2 Conditions Symbol Ratings VCBO ±0.2 (Ta=25°C) 8.4±0.2 Symbol sElectrical Characteristics 16.9±0.3 sAbsolute maximum ratings (Ta=25°C) Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose 100x100x2 50x50x2 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 85
- 88. 2SC4064 Silicon NPN EpitaxialPlanar Transistor (Complement to type 2SA1567) ICBO V IEBO 6 V V(BR)CEO IC 12 A hFE Unit 100max µA VEB=6V 10max µA IC=25mA 50min V VCE=1V, IC=6A 10.1±0.2 50min A VCE(sat) IC=6A, IB=0.3A 0.35max V 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 40typ MHz 150 °C COB VCB=12V, f=1MHz 180typ pF –55 to +150 °C Tstg 1.35±0.15 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) 40mA 6 20mA 4 10mA I B =5mA 0.8 1.6 2.4 3.2 4 4.8 10 1.0 0.5 0 0.002 0.01 2 0.1 1 0 3 (V C E =1V) 125˚C D C Cur r ent Gai n h F E Typ 100 50 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 500 500 25˚C –3 0˚C 100 50 20 0.02 10 12 0.1 Collector Current I C (A) 1 10 12 5 1 0.5 0.3 1 10 Safe Operating Area (Single Pulse) (V C E =12V) 40 s 20 ite he 86 –10 –12 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 nk Emitter Current I E (A) –5 si 0.05 –1 at 150x150x2 10 100x100x2 50x50x2 0.1 –0.5 fin Without Heatsink Natural Cooling In 0.5 30 ith 1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm W Collector Curr ent I C (A) 0m s 10 DC m 20 10 5 s 10 10 Maxim um Power Dissipatio n P C ( W) 1m Typ 1000 P c – T a Derating 30 30 100 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 1.0 1.1 0.5 Base-Emittor Voltage V B E (V) 1000 0 –0.05 –0.1 0 Base Current I B (A) 1000 D C Cur r ent Gai n h F E 4 9A (V C E =1V) Cut- off F re quen cy f T (MH Z ) 6 6A 3A I C= 1 A 5.6 6 h FE – I C Characteristics (Typical) 0.1 8 12A Collector-Emitter Voltage V C E (V) 20 0.02 (V CE =1V) 12 p) 8 I C – V BE Temperature Characteristics (Typical) 1.3 Tem Collector Current I C (A) 60mA 0 0.4typ se Collector-Emitter Saturation Voltage V C E (s at) (V ) 20 m A 100m A 10 0 1.4typ B C E V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 12 2 0.6typ –0.12 0.12 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) (Ca –5 10 tstg (µs) ˚C 6 ton (µs) IB2 (A) IB1 (A) 125 4 VBB2 (V) VBB1 (V) Collector Current I C (A) 24 IC (A) θ j - a ( ˚C/W) RL (Ω) 2.4±0.2 2.2±0.2 Transient Thermal Resistance VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 25˚C Tj 3.9 3 PC ø3.3±0.2 a b 13.0min IB 4.2±0.2 2.8 c0.5 e Te mp) (Case Temp ) 50 VEBO Ratings VCB=50V –30˚C VCEO Conditions Symbol 4.0±0.2 V 0.8±0.2 50 (Cas Unit VCBO External Dimensions FM20(TO220F) (Ta=25°C) 8.4±0.2 Ratings ±0.2 sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol Application : DC Motor Driver and General Purpose 16.9±0.3 LOW VCE (sat) 2 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 89. 2SC4065 Silicon NPN EpitaxialPlanar Transistor (Complement to type 2SA1568) IEBO V(BR)CEO ±12 A 60max mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A 24typ MHz °C COB VCB=10V, f=1MHz 180typ PF –55 to +150 3.9 V 13.0min Tstg 1.35±0.15 1.35±0.15 Collector Current I C (A) 60mA 8 40mA 6 20mA I B =10mA 2 0 0 2 4 10 1.0 0.5 6A 0 0.005 0.01 2 0.1 1 0 3 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =1V) 400 100 50 10 5 12 100 5 ˚C 25 ˚C –3 50 Transient Thermal Resistance DC Cur rent Gain h F E Typ 0˚ C 10 5 1 3 0.02 10 12 0.1 Collector Current I C (A) 1 10 12 θ j-a – t Characteristics 5 1 0.5 0.2 1 10 Safe Operating Area (Single Pulse) (V C E =12V) 40 s fin ite si –1 Emitter Current I E (A) –5 –10 –12 nk 100x100x2 50x50x2 Without Heatsink 0.05 –0.5 at 150x150x2 10 0.1 0 –0.05 –0.1 he Without Heatsink Natural Cooling 20 In 0.5 30 ith 1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm W Collector Curre nt I C (A) 0m s 10 DC m 20 10 5 10 10 s Maxim um Power Dissip ation P C (W) 1m Typ 1000 P c – T a Derating 30 30 100 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 1.0 1.1 0.5 Base Current I B (A) 400 DC Cur rent Gain h F E 4 9A (V C E =1V) Cut-o ff F requ ency f T (MH Z ) 6 3A I C =1 A 6 h FE – I C Characteristics (Typical) 0.1 8 12A Collector-Emitter Voltage V C E (V) 3 0.02 (V CE =1V) 12 p) 100m A 10 I C – V BE Temperature Characteristics (Typical) 1.3 Tem A 4 0.4typ se A 0m 20 1 m 50 1.4typ 0.6typ Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V CE Characteristics (Typical) 12 –0.12 0.12 tf (µs) (Ca –5 10 tstg (µs) ton (µs) ˚C 6 IB2 (A) IB1 (A) 125 4 24 VBB2 (V) VBB1 (V) Collector Current I C (A) IC (A) 2.4±0.2 2.2±0.2 θ j - a (˚ C/W) RL (Ω) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b 0.8±0.2 IC VEB=6V IC=25mA 4.2±0.2 2.8 c0.5 e Te mp) e Tem p) V 10.1±0.2 (Cas V 6 µA (Cas 60 VEBO Unit 100max –30˚C VCEO Conditions ICBO 4.0±0.2 V ±0.2 Unit 60 External Dimensions FM20(TO220F) (Ta=25°C) Ratings VCB=60V Ratings VCBO E 8.4±0.2 Symbol sElectrical Characteristics Symbol ( 400 Ω ) Application : DC Motor Driver and General Purpose 16.9±0.3 sAbsolute maximum ratings (Ta=25°C) B 25˚C Built-in Diode at C–E Low VCE (sat) C Equivalent circuit 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 87
- 90. 2SC4073 Silicon NPN TripleDiffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) V ICBO VCEO 400 V VEBO 10 V 5(Pulse10) A Ratings Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30 10.1±0.2 IB 2 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.3max 150 °C fT VCE=12V, IE=–0.3A 10typ MHz °C COB VCB=10V, f=1MHz 30typ pF ø3.3±0.2 a b V Tj –55 to +150 3.9 V 13.0min Tstg 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 200 100 2 10 –5 0.2 –0.4 1max 3max 0.5max Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) B C E V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 1 2 3 4 – V C E (sat) 0 0.01 0.05 0.1 Collector-Emitter Voltage V C E (V) 0.5 Collector Current I C (A) 1 t on •t stg • t f – I C Characteristics (Typical) 5 50 t on• t s tg • t f (µ s) 25˚C –55˚C Switching Ti me 10 0.5 1 5 1 0.5 t on tf 0.1 0.1 0.5 20 ) mp) (Cas e Te p) Tem se T emp 1.0 1.2 1.4 1 5 0.5 0.3 1 10 100 1000 Time t(ms) P c – T a Derating 20 10 0.8 1 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.6 5 Collector Current I C (A) Collector Current I C (A) 10 10 1m 5 0µ s 5 si nk Co lle ctor Cu rr ent I C ( A) at 0.05 he Without Heatsink Natural Cooling Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than1% ite 0.05 0.1 fin 0.1 0.5 20 In C 0.5 1 ith s D 1 m s 30 W 10 Co lle ctor Cu rren t I C (A) t s tg V C C 200V I C :I B 1 :–I B 2 =10:1:2 0.4 θ j-a – t Characteristics M aximu m Power Dissipat io n P C (W) DC Curr ent Gain h FE 125˚C 0.1 0.2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 0 Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.01 se 0 5 (Ca (Ca C –55˚C ˚ 55 ˚C 1 C 25˚C 5˚ θ j- a ( ˚ C/W) 0 12 2 Transient Thermal Resistance 0 –55˚C (Case Temp) p) 25˚C (Case Tem e Temp) 125˚C (Cas 3 125 50mA 1 1 ) 100mA 2 V B E (sat) emp 200mA eT 3 4 ˚C 300m A 2 as IB 4 Collector Current I C (A) 400 mA (V C E =4V) 5 25 =8 00 m A 60 0m A (C Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 5 2.4±0.2 2.2±0.2 VCC (V) I C – V CE Characteristics (Typical) 4.2±0.2 2.8 c0.5 0.8±0.2 IC Conditions 4.0±0.2 Unit 500 ±0.2 Symbol Ratings VCBO External Dimensions FM20(TO220F) (Ta=25°C) 16.9±0.3 Symbol sElectrical Characteristics 8.4±0.2 sAbsolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 10 Without Heatsink 2 0.01 2 5 10 50 100 Collector-Emitter Voltage V C E (V) 88 500 0.01 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 91. 2SC4130 Silicon NPN EpitaxialPlanar Transistor (High Voltage and High Speed Switchihg Transistor) ICBO 400 V VEBO 10 V 7(Pulse14) A IB 2 PC 30(Tc=25°C) Tj µA µA 400min V hFE VCE=4V, IC=3A 10 to 30 A VCE(sat) IC=3A, IB=0.6A 0.5max W VBE(sat) IC=3A, IB=0.6A 1.3max V 150 °C fT VCE=12V, IE=–0.5A 15typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 3.9 V –5 10 –0.6 0.3 I C – V CE Characteristics (Typical) tstg (µs) ton (µs) tf (µs) 2.2max 1max 0.5max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 2 50mA 0 1 2 3 0 0.02 4 0.05 (C 125˚C 0.1 0.5 as e T 1 –5 5˚ 10 5 0.5 1 5 7 1 0.5 t on tf 0.1 0.2 0.5 1 1.2 5 7 1 0.5 0.3 1 10 100 1000 Time t(ms) P c – T a Derating 30 s 5 s si nk 0.05 at Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% 0.1 he Without Heatsink Natural Cooling ite 0.1 0.5 20 fin 0.5 1 In 1 ith M aximum Power Dissipa ti on P C (W) 0µ s 1.0 W DC 1m m 0.8 10 Collector Curr ent I C (A) 10 0.6 4 20 10 5 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area 20 10 0.2 Collector Current I C (A) Safe Operating Area (Single Pulse) Collect or Cur ren t I C (A) t s tg V C C 200V I C :I B 1 :–I B2 =10:1:2 Collector Current I C (A) 0.05 Transient Thermal Resistance t o n • t s t g• t f ( µ s) –55˚C Swit ching Time D C Cur r ent Gai n h F E 5 25˚C 0.1 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 125˚C 0.05 ) 0 5 7 (V C E =4V) 2 0.02 mp C Collector Current I C (A) h FE – I C Characteristics (Typical) 50 Te 2 V C E (sat) Collector-Emitter Voltage V C E (V) se –55˚C (Case Temp) p) 25˚C (Case Tem e Temp) 125˚C (Cas θ j- a ( ˚C/W) 0 V B E (sat) 1 5˚C 100m A 4 12 200 mA Collector Current I C (A) 4 p) ˚C IB Collector Current I C (A) 400mA 6 2 em 60 0m A (V C E =4V) 7 25 40 0m A 10 00 m A =1 6 Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 7 Weight : Approx 2.0g a. Part No. b. Lot No. B C E ase 3 67 IB2 (A) IB1 (A) (Ca 200 VBB2 (V) VBB1 (V) 2.4±0.2 2.2±0.2 C (C IC (A) RL (Ω) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) VCC (V) 1.35±0.15 25˚ Tstg ø3.3±0.2 a b 13.0min IC 4.0±0.2 100max IC=25mA 0.8±0.2 VEB=10V V(BR)CEO 4.2±0.2 2.8 c0.5 8.4±0.2 IEBO 10.1±0.2 16.9±0.3 100max mp) VCEO VCB=500V e Te V Unit (Cas 500 Ratings p) VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions Symbol –55˚C Unit ±0.2 sElectrical Characteristics Ratings Symbol Tem sAbsolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 10 Without Heatsink 2 0.01 2 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0.01 2 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 89
- 92. 2SC4131 LOW VCE (sat) SiliconNPN Epitaxial Planar Transistor Ratings VCBO 100 V VCEO 50 sElectrical Characteristics Unit Symbol Unit µA V IEBO VEB=15V 10max µA 15 V V(BR)CEO 50min V 15(Pulse25) A hFE IC=25mA 15.6±0.2 60 to 360 VCE=1V, IC=5A IB 4 A VCE(sat) IC=5A, IB=80mA 0.5max PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=80mA 1.2max 150 °C fT VCE=12V, IE=–1A 18typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 210typ pF ø3.3±0.2 a b 3.3 3.0 V 1.75 16.2 Tstg 1.05 +0.2 -0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 4 5 10 –5 0.08 –0.08 0.5typ 2.0typ 0.4typ 0 0 2 4 0 0.002 6 0.01 0.1 1 h FE – I C Temperature Characteristics (Typical) (V C E =1V) 1000 Typ 100 12 5˚ C Transient Thermal Resistance D C Cur r ent Gai n h F E 1000 500 2 5 ˚C – 3 0 ˚C 100 1 70 0.02 10 15 0.1 Collector Current I C (A) s mp) ) ) mp e Te emp (Cas Te he at si 20 nk 10 ite 5 fin 3 40 In 5 Without Heatsink 0.4 10 1000 ith Collecto r Curr ent I C (A) 0m Without Heatsink Natural Cooling 5 100 W DC s 10 s 1 Collector C urrent I C (A) 10 P c – T a Derating m 10 t on 1 1 Time t(ms) 10 tf 0.5 0.3 60 1m 0.5 90 10 15 0.5 40 1 0.1 0.08 0.1 1 1 Safe Operating Area (Single Pulse) V C C 20V I C =5A I B1 =–I B 2 =80mA t stg 1.5 1.0 3 Collector Current I C (A) t on •t stg •t f – I C Characteristics (Typical) 5 0.5 θ j-a – t Characteristics Ma ximum Po we r Dissipatio n P C ( W) 0.1 0 Base-Emittor Voltage V B E (V) (V C E =1V) 70 0.02 0 2 Base Current I B (A) h FE – I C Characteristics (Typical) t o n• t s t g • t f (µ s) se 5A 3A I C =1 A Collector-Emitter Voltage V C E (V) 500 5 se T 15A 10A –30˚C I B =7mA 0.5 (Ca 15mA 4 (Ca 25mA 10 ˚C 8 1.0 25˚C Collector Current I C (A) 40mA E (V C E =1V) 125 80mA 12 C Weight : Approx 2.0g a. Part No. b. Lot No. 15 1.3 Collector Current I C (A) 85mA 3.35 1.5 I C – V BE Temperature Characteristics (Typical) θ j - a ( ˚C/W) 15 B V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) I C – V CE Characteristics (Typical) Switching Time 4.4 tf (µs) 20 0.65 +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 5.45±0.1 sTypical Switching Characteristics (Common Emitter) D C Cur r ent Gai n h F E 3.45 ±0.2 V Tj 5.5±0.2 5.5 10max 1.6 VCB=100V 9.5±0.2 ICBO 23.0±0.3 Ratings VEBO IC External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol 0.8±0.2 sAbsolute maximum ratings (Ta=25°C) Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose 50 Collector-Emitter Voltage V C E (V) 100 3.5 0 0 50 100 Ambient Temperature Ta(˚C) 150
- 93. 2SC4138 Silicon NPN TripleDiffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit V ICBO VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 10(Pulse20) A hFE 10 to 30 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.7A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF 20.0min V 2 3 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 6 10 –5 0.6 –1.2 1max 3max C Weight : Approx 2.0g a. Part No. b. Lot No. 0.5max 1.4 0 0 1 2 3 0.1 0.5 1 5 t on •t stg • t f – I C Characteristics (Typical) 10 125˚C 25˚C Switching Ti me –55˚C 10 0.5 1 5 10 5 t s tg Transient Thermal Resistance t o n• t s tg • t f (µ s) 100 0.1 V C C 200V I C :I B1 :–I B 2 =10:1:2 1 0.5 t on tf 0.1 0.1 0.5 1 0µ 5 10 0.3 10 50 100 Collector-Emitter Voltage V C E (V) 500 ) emp mp) se T e Te nk 0.1 5 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% 40 si 1 60 at Collecto r Cur ren t I C (A) (Cas P c – T a Derating he Collector-Emitter Voltage V C E (V) 500 1000 ite 100 5 0.5 100 fin 50 10 In 0.1 10 1 ith Without Heatsink Natural Cooling 5 ) 0.5 W 1 1.2 80 10 5 1.0 Time t(ms) s 10 0.8 1 Maxim um Power Dissi pation P C (W) 10 0.6 3 30 30 0.5 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) s 0.2 Collector Current I C (A) Collector Current I C (A) 1m 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 mp 0 10 Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 Te V C E (sat) 0.05 Collector-Emitter Voltage V C E (V) 50 se 2 0 0.02 4 4 –55˚C I B =100m A 2 6 (Ca 200m A 4 V B E (sat) (Ca 400mA 6 8 1 ˚C 600 mA 25˚C Collector Current I C (A) 8 (V C E =4V) 10 125 1A Collector Current I C (A) A I C – V BE Temperature Characteristics (Typical) (I C /I B =5) θ j- a ( ˚C/W) 1.2 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 10 1.4 E tf (µs) 33.3 0.65 +0.2 -0.1 5.45±0.1 B RL (Ω) 200 DC Cur rent Gain h FE ø3.2±0.1 5.45±0.1 VCC (V) I C – V CE Characteristics (Typical) 2.0±0.1 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) Collecto r Curr ent I C (A) a 4.8±0.2 b IB Tstg 4.0 VCE=4V, IC=6A 19.9±0.3 IC 15.6±0.4 9.6 4.0max VEBO Symbol 1.8 Conditions 500 5.0±0.2 Unit VCBO Symbol 2.0 Ratings 20 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 91
- 94. 2SC4139 Application : SwitchingRegulator and General Purpose Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol External Dimensions MT-100(TO3P) (Ta=25°C) VCB=500V 100max µA V IEBO VEB=10V 100max µA V V V(BR)CEO IC=25mA 400min A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj 150 °C fT VCE=12V, IE=–1.5A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF V 4.0max 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 25 8 10 –5 0.8 –1.6 1max 3max C Weight : Approx 6.0g a. Part No. b. Lot No. 0.5max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 0 1 2 3 5˚ C 0.5 1 5 –5 5 10 0 20 t on •t stg • t f – I C Characteristics (Typical) 8 t o n• t s t g• t f (µ s) 50 25˚C Sw it ching Time –55˚C 10 0.1 0.5 1 5 10 15 5 t s tg Transient Thermal Resistance 125˚C V C C 200V I C :I B1 :I B2 =10:1:–2 1 0.5 t on tf 0.1 0.5 1 5 10 15 0.5 0.1 1 10 P c – T a Derating Ma xim um Powe r Dissipat io n P C (W) Collector-Emitter Voltage V C E (V) 500 nk 100 si 50 at 10 he Without Heatsink Natural Cooling L=3mH IB2=–1A Duty:less than 1% 100 ite 1 5 1000 fin 500 100 In 100 Collector-Emitter Voltage V C E (V) 92 1 ith 1 10 5 1.2 W Collector Curr ent I C (A) s Without Heatsink Natural Cooling 1.0 120 0µ 5 0.8 Time t(ms) 10 10 0.6 θ j-a – t Characteristics 50 50 0.4 2 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 50 10 0.2 Collector Current I C (A) Collector Current I C (A) 5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 mp) ˚C Collector Current I C (A) h FE – I C Characteristics (Typical) e Te 2 ( V C E (sat) 0.1 Collector-Emitter Voltage V C E (V) 5 0.02 4 (Case ) Temp 12 0 0.03 0.05 4 (Case 6 Cas 125˚C 0.5 Temp) ˚C ( ase 25˚C (C θ j- a (˚ C/W) 0 e Temp) –55˚C (Cas 25˚C I B =100mA 1.0 125 200mA 5 Collector Current I C (A) 400m A em p) ˚C 600mA 10 8 V B E (sat) eT Collector Current I C (A) 800 mA (V CE =4V) 10 1.5 25 1 .2 A 5A as 1. I C – V BE Temperature Characteristics (Typical) (I C /I B =5) C 15 Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) I C – V CE Characteristics (Typical) 1.4 E tf (µs) 200 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) DC C urrent G ain h FE 2 3 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) Collect or Cur ren t I C (A) ø3.2±0.1 Temp) Tstg a b 20.0min IC 4.0 10 15(Pulse30) VEBO 2.0±0.1 (Case 400 4.8±0.2 –55˚C VCEO 15.6±0.4 9.6 ) V Temp 500 1.8 ICBO VCBO 5.0±0.2 Unit 2.0 Ratings Unit 19.9±0.3 Conditions Ratings Symbol 50 3.5 Without Heatsink 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 95. 2SC4140 Silicon NPN TripleDiffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) (Ta=25°C) Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 18(Pulse36) A hFE VCE=4V, IC=10A 10 to 30 a 6 A VCE(sat) IC=10A, IB=2A 0.5max PC 130(Tc=25°C) W VBE(sat) IC=10A, IB=2A 1.3max V Tj 150 °C fT VCE=12V, IE=–2.0A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 165typ V 4.0max 20.0min 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 20 10 10 –5 1 –2 1max 3max C Weight : Approx 6.0g a. Part No. b. Lot No. 0.5max 1 2 3 5˚ 0.5 1 5 –55˚C 10 5 10 18 5 t s tg V C C 200V I C :I B1 :–I B 2 =10:1:2 Transient Thermal Resistance t o n• t s tg • t f (µ s) Switching Ti me 25˚C 1 0.5 t on tf 0.1 0.2 0.5 1 5 10 s 0µ 10 18 0.1 1 10 mp) mp) e Te (Cas P c – T a Derating 100 Collector-Emitter Voltage V C E (V) 500 Collecto r Cur rent I C (A) nk 50 si 10 at 0.03 5 he 500 ite 0.05 fin 0.1 Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% 100 In 1 0.5 0.1 Collector-Emitter Voltage V C E (V) 1000 130 5 0.05 100 100 ith Without Heatsink Natural Cooling 50 mp 0.5 W 1 0.5 10 1.2 Time t(ms) 10 5 0.03 5 1.0 s DC 10 0.8 1 Maxim um Power Dissi pation P C (W) 1m 0.6 2 50 ms 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) 50 0 Base-Emittor Voltage V B E (V) 10 125˚C 1 ) 0 10 18 t on •t stg • t f – I C Characteristics (Typical) 50 0.5 Te – (V C E =4V) 0.1 se C ˚ 55 Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 (Ca 4 C V C E (sat) Collector-Emitter Voltage V C E (V) 5 0.02 8 –55˚C 12 0 0.02 0.05 0.1 4 ) Temp (Cas (Case ˚C 125˚C θ j - a (˚C /W) 0 e Temp) 25˚C (Cas 12 25˚C I B =100mA Temp) –55˚C (Case 125 200mA 4 Collector Current I C (A) 400m A 8 V B E (sat) 1 eT em p) 25 ˚C 600mA 16 as 12 (V CE =4V) 18 (C 1.2 A 800 mA 0 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 1.4 1 .6 A 16 Collector Current I C (A) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 18 1.4 E tf (µs) 200 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Co lle ctor Cu rre nt I C ( A) 2 3 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 2.0±0.1 ø3.2±0.1 pF Tstg 4.8±0.2 b IB DC Cur rent Gain h FE 15.6±0.4 9.6 e Te IC 4.0 VEBO Symbol 1.8 Ratings ICBO 5.0±0.2 Conditions V 2.0 Unit 500 19.9±0.3 Ratings VCBO Symbol 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 93
- 96. 2SC4153 Silicon NPN TripleDiffused Planar Transistor ( Switchihg Transistor) IEBO V(BR)CEO VCE=4V, IC=3A 70 to 220 16.9±0.3 V hFE 8.4±0.2 µA 120min IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C COB VCB=10V, f=1MHz 110typ pF –55 to +150 13.0min 3.9 V 1.35±0.15 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) –5 mA Collector Current I C (A) 100 mA 5 60m A 4 40mA 3 20m A 2 I B =10mA 1 0 0 1 2 3 3 6 2 1 4 3 0 0.005 0.01 1 5A 3A I C = 1A 0.1 1 0 2 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =4V) 300 Typ 100 50 1 12 5˚ C Transient Thermal Resistance D C Cur r ent Gai n h F E 300 25˚C 100 –30 20 0.01 5 7 ˚C 50 0.1 Collector Current I C (A) 0.5 1 5 7 θ j-a – t Characteristics 5 1 0.5 0.2 1 10 100 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 1.0 1.1 0.5 Base Current I B (A) (V C E =4V) 0.5 5 2 4 h FE – I C Characteristics (Typical) 0.1 (V C E =4V) 7 Collector-Emitter Voltage V C E (V) 20 0.01 I C – V BE Temperature Characteristics (Typical) p) 150 0.5max Tem mA 5 3max se 200 0.5max Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) I C – V CE Characteristics (Typical) 7 –0.6 0.3 tf (µs) (Ca 10 tstg (µs) ton (µs) ˚C 3 IB2 (A) IB1 (A) 125 16.7 50 VBB2 (V) VBB1 (V) Collector Current I C (A) IC (A) 2.4±0.2 2.2±0.2 θ j - a (˚C /W) RL (Ω) VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 ) Tstg D C Cur r ent Gai n h F E ø3.3±0.2 a b Temp A 100max mp) 7(Pulse14) IC VEB=8V IC=50mA 4.2±0.2 2.8 c0.5 (Case V 10.1±0.2 –30˚C V 8 µA 4.0±0.2 120 VEBO Unit 100max e Te VCEO Symbol 0.8±0.2 ICBO (Cas V 25˚C Unit 200 Conditions VCB=200V Ratings VCBO External Dimensions FM20(TO220F) (Ta=25°C) Ratings ±0.2 sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol Application : Humidifier, DC-DC Converter, and General Purpose Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 20 40 0µ s Natural Cooling Silicone Grease Heatsink: Aluminum in mm he 100x100x2 at si 10 nk Collector Curre nt I C (A) 150x150x2 ite 0.1 fin Without Heatsink Natural Cooling In 0.5 ith 1 20 W 10 ms 20 10 5 30 Maxim um Power Dissipatio n P C (W) 10 Typ Cut- off F req uenc y f T (MH Z ) 10 30 50x50x2 Without Heatsink 2 0 –0.01 0.05 –0.1 –1 Emitter Current I E (A) 94 –5 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 97. 2SC4296 Silicon NPN TripleDiffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sElectrical Characteristics ICBO V 10 V 10(Pulse20) A µA 400min V hFE VCE=4V, IC=6A 10 to 30 IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max 150 °C fT VCE=12V, IE=–0.7A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF ø3.3±0.2 a b V Tj 3.3 3.0 V 1.75 16.2 Tstg 1.05 +0.2 -0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 33 6 10 –5 0.6 –1.2 1max 3max 0.5max 1.4 I B = 100mA 2 0 0 1 2 3 0.1 0.5 1 5 t on •t stg • t f – I C Characteristics (Typical) 10 125˚C 25˚C Sw it ching Time –55˚C 10 0.5 1 5 10 5 t s tg Transient Thermal Resistance t o n• t s t g• t f (µ s) 100 0.1 V C C 200V I C :I B 1 :–I B2 =10:1:2 1 0.5 t on tf 0.1 0.1 0.5 1 5 10 0.3 10 100 P c – T a Derating 100 Collector-Emitter Voltage V C E (V) 500 nk 50 si 10 40 at 0.02 5 he Collector-Emitter Voltage V C E (V) 500 ite 0.02 fin 0.1 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% 60 In 1 0.5 0.05 100 1000 ith 0.05 50 1 80 5 Without Heatsink Natural Cooling 10 ) 0.5 Time t(ms) 10 s 1 5 1.2 µs 0.5 0.1 1.0 W 5 m s Collect or Cur re nt I C (A) 10 0µ 0.8 1 Ma xim um Powe r Dissipat io n P C (W) 50 10 0.6 3 30 s 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 30 1m 0.2 Collector Current I C (A) Collector Current I C (A) 10 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 mp 0 10 Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 Te V C E (sat) 0.05 Collector-Emitter Voltage V C E (V) 50 4 2 0 0.02 4 6 se V B E (sat) (Ca 200m A 4 8 1 (Ca 400mA 6 (V C E =4V) 10 25˚C 600 mA E ˚C Collector Current I C (A) 8 C Weight : Approx 6.5g a. Part No. b. Lot No. 125 1A Collector Current I C (A) A 3.35 1.5 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) θ j - a (˚C/W) 1.2 B V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 10 Collect or Cur ren t I C (A) 4.4 tf (µs) 200 0.65 +0.2 -0.1 5.45±0.1 1.5 I C – V CE Characteristics (Typical) 0.8 2.15 5.45±0.1 sTypical Switching Characteristics (Common Emitter) DC C urrent G ain h FE 0.8±0.2 100max IC=25mA 3.45 ±0.2 5.5 VEB=10V V(BR)CEO 5.5±0.2 1.6 IEBO 15.6±0.2 23.0±0.3 IC µA ) 400 VEBO 100max emp VCEO VCB=500V mp) V Unit se T 500 Ratings e Te VCBO External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol (Cas Unit –55˚C Ratings Symbol 9.5±0.2 sAbsolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 20 3.5 0 Without Heatsink 0 50 100 150 Ambient Temperature Ta(˚C) 95
- 98. 2SC4297 Silicon NPN TripleDiffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Unit ICBO VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.3max 150 °C fT VCE=12V, IE=–1A 10typ MHz °C COB VCB=10V, f=1MHz 105typ pF 3.0 3.3 1.75 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 28.5 7 10 –5 0.7 –1.4 1max 3max 0.5max Weight : Approx 6.5g a. Part No. b. Lot No. 0 1 0 2 3 12 5˚ 0.05 0.1 Collector-Emitter Voltage V C E (V) –5 0.5 1 5 5˚ 0 10 t on •t stg • t f – I C Characteristics (Typical) 8 t on• t s t g • t f (µ s) 50 25˚C Swi tchi ng T im e –30˚C 10 0.5 1 5 10 12 5 t s tg V C C 200V I C :I B 1 :–I B2 =10:1:2 1 0.5 t on tf 0.1 0.5 1 30 5 10 0.1 1 10 ) 100 1000 P c – T a Derating 80 500 Collector Curr ent I C (A) nk 100 si 50 Collector-Emitter Voltage V C E (V) 40 at 10 he 0.1 5 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% ite 500 0.5 fin 0.1 1 60 In Without Heatsink Natural Cooling 5 ith 1 Collector-Emitter Voltage V C E (V) mp) 0.5 W 5 100 1.2 Time t(ms) 10 50 1.0 s 10 10 0.8 1 M aximum Power Dissipa ti on P C (W) 0µ 0.6 2 30 10 5 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.5 0.2 Collector Current I C (A) Collector Current I C (A) 96 Transient Thermal Resistance 125˚C 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 p) 2 C Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 Tem C V C E (sat) 0 0.02 4 4 Temp 125˚C 6 se mp) Te (Case (Case I B =100mA 2 e Temp) 25˚C (Cas 8 (Ca 200mA 4 Temp) ˚C 6 –55˚C (Case 25˚C 400m A 1 125 8 (V C E =4V) 10 V B E (sat) θ j - a (˚ C/W) Collector Current I C (A) 60 0m A E 12 Collector Current I C (A) 80 0m A C 3.35 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) as e 2 5 Temp ) ˚C 1A DC Cur rent Gain h F E 1.5 (C 12 10 B V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) I C – V CE Characteristics (Typical) Co lle ctor Cu rre nt I C ( A) 4.4 tf (µs) 200 0.65 +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 e Te –55 to +150 V 16.2 Tstg 3.45 ±0.2 ø3.3±0.2 a b V Tj 5.5±0.2 –55˚C IC 15.6±0.2 (Cas VEBO Symbol 5.5 Ratings V 9.5±0.2 Conditions 500 23.0±0.3 Unit VCBO Symbol 0.8±0.2 External Dimensions FM100(TO3PF) (Ta=25°C) Ratings 1.6 sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 20 3.5 0 Without Heatsink 0 50 100 Ambient Temperature Ta(˚C) 150
- 99. 2SC4298 Silicon NPN TripleDiffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) 100max µA V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VEBO VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max 150 °C fT VCE=12V, IE=–1.5A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF ø3.3±0.2 a b V Tj 3.3 3.0 V 1.75 16.2 Tstg 1.05 +0.2 -0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 25 8 10 –5 0.8 –1.6 1max 3max 0.5max 4.4 B V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 0 1 2 3 5˚ C 0.5 1 5 –5 5 10 8 Sw it ching Time –55˚C 10 1 5 10 15 5 t s tg Transient Thermal Resistance t o n• t s t g• t f (µ s) 25˚C 0.5 V C C 200V I C :I B1 :I B2 = 10:1:–2 1 0.5 t on tf 0.1 0.5 1 0.2 5 0.4 10 15 0.1 1 ) 10 100 1000 P c – T a Derating In fin ite he 40 at si nk Ma xim um Powe r Dissipat io n P C (W) ith Without Heatsink Natural Cooling L=3mH IB2=–1A Duty:less than 1% 60 W Collector Curr ent I C (A) s Without Heatsink Natural Cooling 10 5 Temp 0.5 80 0µ 5 1.2 Time t(ms) 10 10 1.0 1 50 50 0.8 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.6 2 Collector Current I C (A) Collector Current I C (A) Collector Cur rent I C (A) 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 125˚C 0.1 mp) 0 20 (V C E =4V) 50 (Case ˚C Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 e Te 2 ( V C E (sat) 0.1 Collector-Emitter Voltage V C E (V) 5 0.02 4 Cas ) Temp 12 0 0.03 0.05 4 (Case 6 25˚C 125˚C 0.5 Temp) ˚C ( ase 25˚C (C θ j- a ( ˚C/W) 0 e Temp) –55˚C (Cas 125 I B =100mA Collector Current I C (A) 200mA 5 1.0 em p) ˚C 400mA 8 V B E (sat) eT 600m A 10 (V CE =4V) 25 Collector Current I C (A) 800 mA E 10 1.5 as 1. 2A C 5A Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1. C Weight : Approx 6.5g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 15 3.35 1.5 tf (µs) 200 0.65 +0.2 -0.1 5.45±0.1 1.5 I C – V CE Characteristics (Typical) 0.8 2.15 5.45±0.1 sTypical Switching Characteristics (Common Emitter) DC C urrent G ain h FE 3.45 ±0.2 Temp) 400 5.5±0.2 (Case VCEO 15.6±0.2 –55˚C V 5.5 VCB=500V 500 9.5±0.2 ICBO VCBO 0.8±0.2 Unit Symbol 23.0±0.3 Ratings Unit IC External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Ratings Symbol 1.6 sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 20 Without Heatsink 1 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 1 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 97
- 100. 2SC4299 Silicon NPN TripleDiffused Planar Transistor (High Voltage Switchihg Transistor) External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Unit ICBO VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max 150 °C fT VCE=12V, IE=–0.3A 6typ MHz °C COB VCB=10V, f=1MHz 50typ pF ø3.3±0.2 a b 3.0 3.3 1.75 1.05 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 250 1 10 –5 0.15 –0.5 1max 5max 1max 1.5 0 I B =50mA 0 1 2 3 V B E (sat) 125˚C –55 ˚C 0.05 0.1 Collector-Emitter Voltage V C E (V) 1 5˚C 0 3 t on •t st g • t f – I C Characteristics (Typical) 8 t o n• t s t g• t f (µ s) 50 Sw it ching Time 25˚C –55˚C 10 0.5 1 3 5 t s tg Transient Thermal Resistance 125˚C 0.1 VCC 250V IC:IB1:–IB2 =2:0.3:1 Const. 1 tf 0.5 t on 0.2 0.1 0.5 1 3 0.5 0.3 1 10 P c – T a Derating 60 at si nk Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 40 he 0.5 ite 1 50 fin Ma xim um Powe r Dissipat io n P C (W) 70 In Collecto r Cur rent I C (A) 1000 ith Without Heatsink Natural Cooling 100 W 0.5 1.2 Time t(ms) s 1 1.0 1 5 0µ 0.8 3 10 10 0.6 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.4 Collector Current I C (A) Collector Current I C (A) 5 0.2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 0 Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.01 1 ( 12 0.5 mp) Temp) V C E (sat) 0 0.02 4 (Case 2 mp) e Temp) 25˚C (Cas ase Te p) –55˚C (Case Tem e Te 1 25˚C (C 1 (V CE =4V) (Cas 100mA E 125˚C 200mA 2 C 3.35 Weight : Approx 6.5g a. Part No. b. Lot No. 3 θ j- a ( ˚C/W) Collector Current I C (A) 300mA 0.65 +0.2 -0.1 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 3 400mA 2 5 Cas eT ˚C e m p) 500mA B V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V CE Characteristics (Typical) Collector Cur rent I C (A) 4.4 tf (µs) 250 +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 p) –55 to +150 V 16.2 Tstg DC C urrent G ain h FE 3.45 ±0.2 V Tj 5.5±0.2 ase Tem IC 15.6±0.2 –55˚C (C VEBO Symbol 5.5 Conditions V 9.5±0.2 Unit 900 23.0±0.3 Ratings VCBO 0.8±0.2 Symbol sElectrical Characteristics (Ta=25°C) 1.6 sAbsolute maximum ratings Application : Switching Regulator and General Purpose 30 20 10 Without Heatsink 0.1 50 100 500 Collector-Emitter Voltage V C E (V) 98 1000 0.1 50 100 500 Collector-Emitter Voltage V C E (V) 1000 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 101. 2SC4300 Silicon NPN TripleDiffused Planar Transistor (High Voltage Switchihg Transistor) VCEO 800 µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 VEBO IC 15.6±0.2 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max 150 °C fT VCE=12V, IE=–0.5A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 75typ pF ø3.3±0.2 a b 3.3 3.0 V 1.75 16.2 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 125 2 10 –5 0.3 –1 1max 5max 1max 2 I B =100mA 1 0 0 1 2 3 –55˚C (Case Temp) 25˚C (Case Temp) e Temp) 125˚C (Cas V C E (sat) 0 0.03 0.05 4 C 125˚C ( 0.1 0.5 Collector-Emitter Voltage V C E (V) as 1 5 0 10 0 0.2 Switching T im e 25˚C –55˚C 10 1 5 5 t s tg Transient Thermal Resistance t on • t st g• t f (µ s) 125˚C VCC 250V IC:IB1:–IB2 =2:0.3:1 Const. 1 tf 0.5 t on 0.2 0.1 0.5 0.4 1 5 ) 0.5 0.1 1 10 100 1000 Time t(ms) P c – T a Derating 20 10 1.2 1 10 0µ s 5 500 Collector-Emitter Voltage V C E (V) 1000 0.01 50 100 500 Collector-Emitter Voltage V C E (V) 1000 nk 100 si 50 40 at 10 he 0.01 0.05 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% ite 0.05 0.1 fin Without Heatsink Natural Cooling 0.5 In 0.1 1 ith 1 0.5 60 W Co lle ctor Cu rren t I C ( A) s µs 1m 10 10 5 80 Maxim um Power Dissipatio n P C ( W) 20 1.0 2 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.8 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) 0.6 Base-Emittor Voltage V B E (V) 10 0.5 mp) 1 t on •t stg • t f – I C Characteristics (Typical) 50 0.1 2 e (V C E =4V) 0.05 3 Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 4 Temp V B E (sat) 1 (V CE =4V) e Te 200mA E (Case 3 2 θ j- a ( ˚C/W) Collector Current I C (A) 300mA C Weight : Approx 6.5g a. Part No. b. Lot No. (Cas 400 mA 3.35 1.5 125˚C 500m A 4.4 5 Collector Current I C (A) 60 0m A 0.65 +0.2 -0.1 5.45±0.1 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) Te m p) 25˚ C – 5 5 ˚C Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 700mA 4 B V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V CE Characteristics (Typical) 5 Collecto r Cur rent I C (A) 1.5 tf (µs) 250 0.8 2.15 25˚C Tstg D C Cur r ent Gai n h F E 3.45 ±0.2 V Tj 5.5±0.2 5.5 100max 9.5±0.2 VCB=800V 23.0±0.3 ICBO p) V Unit ase Tem 900 Ratings –55˚C (C VCBO External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol 0.8±0.2 Unit Symbol 1.6 sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Ratings Application : Switching Regulator and General Purpose 20 3.5 0 Without Heatsink 0 50 100 150 Ambient Temperature Ta(˚C) 99
- 102. 2SC4301 Silicon NPN TripleDiffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose External Dimensions FM100(TO3PF) (Ta=25°C) 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 IB 3.5 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.2max 150 °C fT VCE=12V, IE=–1A 6typ MHz °C COB VCB=10V, f=1MHz 105typ 3.45 ±0.2 ø3.3±0.2 a b V Tj 5.5±0.2 3.0 3.3 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) 1.5 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 83 3 10 –5 0.45 –1.5 1max 5max 1max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 0 1 2 3 12 5 V C E (sat) 0 0.02 4 0.05 0.1 Collector-Emitter Voltage V C E (V) ˚C –5 0.5 1 0 5 7 10 Sw it ching Time 10 0.05 0.1 0.5 1 5 7 t s tg 5 VCC 250V I C :I B1 :I B2 =2:0.3:–1 Const. 1 tf 0.5 t on 0.2 0.1 0.5 20 10 5 7 0.5 0.1 1 10 100 1000 P c – T a Derating ite he 40 at si nk Ma xim um Powe r Dissipation P C (W) fin Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty :less than1% 60 In Collect or Cur ren t I C (A) ) 1 ith 1 0.5 1.2 80 5 Without Heatsink Natural Cooling 1.0 Time t(ms) 10 1 0.8 W Co lle ctor Cu rren t I C (A) 1 s 5 0.6 2 20 0µ 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) 0.5 Transient Thermal Resistance t on • t s t g• t f ( µ s) C –55˚C 5 0.02 0 Base-Emittor Voltage V B E (V) t on • t stg • t f – I C Characteristics (Typical) 50 5˚ mp) 5˚C (V C E =4V) 12 e Te 2 Collector Current I C (A) h FE – I C Characteristics (Typical) 25˚C (Cas (C 25˚C 125˚C 4 125˚C ) emp ase T θ j - a (˚C /W ) 0 Collector Current I C (A) I B =100mA 2 p) ase Tem 25˚C (C ) 200mA –55˚C ) (Case Temp emp 300 mA 6 V B E (sat) 1 (V CE =4V) 7 eT Collector Current I C (A) 500mA E as 6 C Weight : Approx 6.5g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) (I C /I B =5) (C 700m A 3.35 1.5 ˚C Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1A DC C urrent G ain h FE 4.4 25 I C – V CE Characteristics (Typical) 4 B 0.65 +0.2 -0.1 5.45±0.1 tf (µs) 250 0.8 2.15 pF p) –55 to +150 1.75 16.2 Tstg V Temp IC 15.6±0.2 ase Tem VEBO 0.8±0.2 Unit VCB=800V Symbol 5.5 Ratings ICBO 1.6 Conditions V 9.5±0.2 Unit 900 23.0±0.3 Ratings VCBO (Case Symbol sElectrical Characteristics –55˚C (C sAbsolute maximum ratings (Ta=25°C) 20 Without Heatsink 0.1 50 100 500 Collector-Emitter Voltage V C E (V) 100 1000 0.1 50 100 500 Collector-Emitter Voltage V C E (V) 1000 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 103. 2SC4304 Silicon NPN TripleDiffused Planar Transistor (High Voltage High Speed Switchihg Transistor) IEBO V(BR)CEO hFE µA 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A 15typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 3.9 V 13.0min Tstg 0.1 200m A 100mA 1 I B =50mA 1 0 2 3 4.0max 0.7max 0.7max V C E (sat) –55˚C (Case Temp) 25˚C (Case Temp) 125˚C (Case Temp) V B E (sat) 1 p) –55˚C (Case Tem p) 25˚C (Case Tem Temp) 125˚C (Case 0.05 Collector-Emitter Voltage V C E (V) 0.1 0.5 1 0 7 5 Sw it ching Time –55˚C 10 5 0.5 1 3 t s tg V C C 250V I C :I B1 :–I B 2 =10:1.5:5 Transient Thermal Resistance t o n• t s t g• t f (µ s) 25˚C 0.1 1 tf 0.5 t on 0.1 0.1 0.2 0.5 0.4 1.0 1.2 1 2 1 0.5 0.3 1 10 100 1000 Time t(ms) P c – T a Derating 10 5 0.8 4 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.6 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) 5 35 10 µs at si nk 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 1000 he 20 10 0.01 0.005 50 ite 0.01 0.005 2 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% fin ) Without Heatsink Natural Cooling 0.1 0.05 In s Collecto r Cur rent I C (A) s C 0.1 0.05 1 0.5 ith 0µ 5 ms =2 10 ( Tc 0.5 30 W Ma xim um Powe r Dissipat io n P C (W) 50 1m 1 DC Collector Curr ent I C (A) 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 125˚C 0.05 1 3 (V C E =4V) 2 0.01 2 Collector Current I C (A) h FE – I C Characteristics (Typical) 50 (V C E =4V) 3 2 0 0.01 4 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) mp) Collector Current I C (A) 300m A 2 2.4±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. B C E e Te Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 700mA 500 mA 0 –0.35 tf (µs) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V CE Characteristics (Typical) 3 tstg (µs) ton (µs) Cas –5 10 IB2 (A) ˚C ( 0.7 357 IB1 (A) 125 250 VBB2 (V) VBB1 (V) Collector Current I C (A) IC (A) RL (Ω) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 θ j - a ( ˚ C/W) VCC (V) 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) DC C urrent G ain h FE ø3.3±0.2 a b p) A 100max e Tem 3(Pulse6) IC VEB=7V IC=10mA 4.2±0.2 2.8 c0.5 (Cas V 10.1±0.2 4.0±0.2 V 7 µA –55˚C 800 VEBO 100max mp) VCEO VCB=800V 0.8±0.2 ICBO e Te V Unit (Cas 900 Ratings 25˚C VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions Symbol 8.4±0.2 Unit ±0.2 sElectrical Characteristics Ratings Symbol 16.9±0.3 sAbsolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose Without Heatsink 100 500 Collector-Emitter Voltage V C E (V) 1000 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 101
- 104. 2SC4381/4382 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SA1667/1668) V VCEO 150 200 10max V ICBO VCB= VEBO 6 V IEBO IC 2 A V(BR)CEO µA 150 VEB=6V 10.1±0.2 200 V µA 10max IC=25mA 150min 200min hFE VCE=10V, IC=0.7A 60min W VCE(sat) IC=0.7A, IB=0.07A 1.0max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 35typ pF 1.35±0.15 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) 100 Collector Current I C (A) 1.6 1.2 I B =5mA/Step 0.4 0 0 2 4 6 8 1 I C = 0 .5 0 2 10 100 0 1000 0 Base Current I B (mA) (V C E =10V) 100 50 0.1 1 125 ˚C 2 5 ˚C – 3 0 ˚C 100 50 30 0.01 2 0.1 Collector Current I C (A) 6 1 2 1 0.5 1 10 100 Safe Operating Area (Single Pulse) (V C E =12V) 30 1 In fin ite he at si nk Without Heatsink Natural Cooling 1.2SC4381 2.2SC4382 20 ith 0.1 W M aximum Power Dissip ation P C (W) s s Collecto r Curr ent I C (A) 1m ms C 5m 10 20 Typ P c – T a Derating 5 D 20 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 1.0 θ j-a – t Characteristics Transient Thermal Resistance DC Cur rent Gain h F E 400 Typ 0.5 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 400 30 1 2A 1A A (V C E =10V) 30 0.01 (V C E =10V) 2 2 10 h FE – I C Characteristics (Typical) DC Cur rent Gain h F E I C – V BE Temperature Characteristics (Typical) 3 Collector-Emitter Voltage V C E (V) Cut-o ff F requ ency f T (MH Z ) 1.5typ ) 50 m A 2 0.8 3.0typ 1.0typ Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) I C – V CE Characteristics (Typical) –100 tf (µs) e Temp) –5 tstg (µs) ton (µs) Temp 10 IB2 (mA) (Case 1 IB1 (mA) VBB2 (V) 125˚C 20 20 VBB1 (V) Collector Current I C (A) IC (A) 2.4±0.2 2.2±0.2 θ j - a (˚ C/W) RL (Ω) VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 25˚C (Cas Tstg 3.9 A 25(Tc=25°C) 13.0min 1 PC ø3.3±0.2 a b V IB 4.2±0.2 2.8 c0.5 4.0±0.2 200 External Dimensions FM20(TO220F) Unit e Temp) 150 Conditions 0.8±0.2 VCBO Symbol ±0.2 2SC4381 2SC4382 Unit –55˚C (Cas Symbol (Ta=25°C) Ratings 2SC4381 2SC4382 8.4±0.2 Ratings Application : TV Vertical Output, Audio Output Driver and General Purpose sElectrical Characteristics (Ta=25°C) 16.9±0.3 sAbsolute maximum ratings 10 Without Heatsink 0 –0.01 –0.1 –0.5 Emitter Current I E (A) 102 1 2 0.01 –1 –2 1 10 100 Collector-Emitter Voltage V C E (V) 300 0 0 50 100 Ambient Temperature Ta(˚C) 150
- 105. 2SC4388 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SA1673) Symbol sElectrical Characteristics Symbol External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Ratings Unit ICBO VCB=200V 10max µA VCEO 180 V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC 15 A hFE IC=50mA 180min VCE=4V, IC=3A V 23.0±0.3 VEBO 15.6±0.2 50min∗ A VCE(sat) IC=5A, IB=0.5A 2.0max V 85(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 300typ ø3.3±0.2 a b –55 to +150 ∗hFE Rank °C pF 1.75 16.2 Tstg 3.0 4 PC 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 1.5 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 40 4 10 10 –5 1 –1 0.5max 1.8max 0.6max 4.4 Weight : Approx 6.5g a. Part No. b. Lot No. I B =20mA 0 0 1 2 3 I C =10A 0 4 0 0.5 1.0 1.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 300 200 Typ 50 0.5 1 5 Transient Thermal Resistance DC Cur rent Gain h FE 125˚C 0.1 100 25˚C 50 –30˚C 20 0.02 10 15 0.1 Collector Current I C (A) 0.5 mp) 1 2 1 5 10 15 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Temp) e Te 0 Base-Emittor Voltage V B E (V) (V C E =4V) 20 0.02 0 2.0 Base Current I B (A) h FE – I C Characteristics (Typical) (Cas 5A Collector-Emitter Voltage V C E (V) 100 5 (Case 1 –30˚C 50mA 5 10 25˚C 100 mA 2 mp) 20 0m A 10 e Te A E (V C E =4V) Cas 300m C 15 3 ˚C ( mA 125 0 50 Collector Current I C (A) A 3.35 I C – V BE Temperature Characteristics (Typical) θ j - a (˚C /W) Collector Current I C (A) 7 m 00 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 1A 15 B 0.65 +0.2 -0.1 1.5 tf (µs) I C – V CE Characteristics (Typical) 0.8 2.15 O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 40 100 10 Typ 5 he at si nk Without Heatsink Natural Cooling ite 0.5 60 fin 1 80 In 10 s DC ith 20 0m s W Collect or Cur ren t I C (A) 10 m Maxim um Power Dissipation P C (W) 10 Cut- off F req uency f T (M H Z ) DC Curr ent Gain h F E 3.45 ±0.2 3.3 IB 5.5±0.2 5.5 V 1.6 Unit 200 9.5±0.2 Ratings VCBO 0.8±0.2 sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 40 20 0.1 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 103
- 106. 2SC4418 Application : SwitchingRegulator and General Purpose sElectrical Characteristics Unit µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=1.5A 10 to 30 ICBO 400 V VEBO 10 V 5(Pulse10) A IC IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A 1.3max 150 °C fT VCE=12V, IE=–0.3A 20typ MHz °C COB VCB=10V, f=1MHz 30typ pF 0.15 I B =50mA 1 0 1 2 3 3.9 V B E (sat) 1 –55˚C (Case Temp) Temp) 25˚C (Case e Temp) 5˚C (Cas 12 0 0.01 4 0.05 Collector-Emitter Voltage V C E (V) 1 0.1 0.5 1 0 5 θ j - a (˚C /W) 8 t o n• t s t g• t f (µ s) Sw it ching Time 10 5 0.5 1 5 5 V C C 200V I C :I B 1 :I B2 =10:1:–2 1 tf t on 0.1 0.1 0.5 1 3 1 0.5 0.4 10 m 10 s 0µ 50 s 100 1000 P c – T a Derating 30 10 µs 5 si nk Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% at 0.1 0.05 he Without Heatsink Natural Cooling ite 0.1 0.5 20 fin 0.5 1 In 1 ith s W DC 1m Collect or Cur re nt I C (A) 5 10 Reverse Bias Safe Operating Area M aximum Power Dissipa ti on P C ( W) 10 1 Time t(ms) 20 20 1.6 5 Collector Current I C (A) Safe Operating Area (Single Pulse) Collector Cur rent I C (A) t s tg 0.5 Collector Current I C (A) 0.05 Transient Thermal Resistance Typ 0.1 1.0 θ j-a – t Characteristics t on •t stg • t f – I C Characteristics (Typical) 100 0.05 0 Base-Emittor Voltage V B E (V) (V C E =4V) 2 0.01 2 Collector Current I C (A) h FE – I C Characteristics (Typical) 50 3 eT em Tem p) p e Te ) mp) 100 mA 4 as 2 25˚C (Case Temp) 125˚C (Case Temp) se 200 mA –55˚C (Case Temp) 2 ˚C ( 400 mA (V CE =4V) 5 V C E (sat) (C Collector Current I C (A) 60 0m A I C – V BE Temperature Characteristics (Typical) (I C /I B =5) Ca 1A 4 0 0.5max –55 1.4 A 3 2.5max Weight : Approx 2.0g a. Part No. b. Lot No. B C E 5˚C A Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 1.8 1max –0.3 tf (µs) tstg (µs) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V CE Characteristics (Typical) 5 ton (µs) IB2 (A) C( –5 10 1.5 IB1 (A) 12 133 200 VBB2 (V) VBB1 (V) IC (A) 2.4±0.2 2.2±0.2 Collector Current I C (A) RL (Ω) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) VCC (V) 1.35±0.15 25˚ –55 to +150 V 13.0min Tstg DC C urrent G ain h FE ø3.3±0.2 a b V Tj 4.2±0.2 2.8 c0.5 Cas VCEO 10.1±0.2 4.0±0.2 100max V 0.8±0.2 Ratings VCB=500V Unit 500 16.9±0.3 Conditions Symbol Ratings VCBO Symbol External Dimensions FM20(TO220F) (Ta=25°C) 8.4±0.2 sAbsolute maximum ratings (Ta=25°C) ±0.2 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) 10 Without Heatsink 2 0.01 2 5 10 50 100 Collector-Emitter Voltage V C E (V) 104 500 0.01 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 107. 2SC4434 Silicon NPN TripleDiffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol Application : Switching Regulator, Lighting Inverter, and General Purpose Symbol External Dimensions MT-100(TO3P) (Ta=25°C) Unit 100max µA VCEO 400 V IEBO VEB=10V 100max µA VEBO 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 25 5 A VCE(sat) IC=8A, IB=1.6A 0.7max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj 150 °C fT VCE=12V, IE=–1.5A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 135typ ø3.2±0.1 pF 3 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 25 8 10 –5 1.6 –3.2 0.5max 2.0max C 0.15max 3 Switching Ti me 25˚C 10 1 0.1 0.5 1 5 5 10 15 t on 0.1 tf 0.05 0.5 1 5 0µ 10 15 p) Tem p) p) em Tem se Ca as (C 25˚ 0.5 0.1 1 10 100 1000 P c – T a Derating 120 s Collector-Emitter Voltage V C E (V) 500 Collector Cur rent I C (A) nk 100 si 50 at 10 he 0.1 5 ite 500 fin 0.1 0.5 Without Heatsink Natural Cooling L=3mH IB2=–1A Duty:less than 1% In Without Heatsink Natural Cooling 1 ith 1 5 100 W 5 Collector-Emitter Voltage V C E (V) C( 1 Time t(ms) 10 100 75˚ 2 Reverse Bias Safe Operating Area 10 50 1.0 θ j-a – t Characteristics 40 10 0.5 Collector Current I C (A) 10 5 0 Base-Emittor Voltage V B E (V) t s tg Safe Operating Area (Single Pulse) 0.5 eT 0 10 1 V C C 200V I C :I B 1 :–I B2 =5:1:2 0.5 Collector Current I C (A) 40 4 2 5 t o n • t s tg • t f ( µ s) 150˚C 75˚C 0.5 6 V C E (sat) t on •t stg • t f – I C Characteristics (Typical) (V C E =4V) 0.1 8 Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) 5 0.05 0˚ 10 0˚C 15 Collector-Emitter Voltage V C E (V) 50 ) 7 5 ˚C 1 0 0.05 4 Temp) θ j - a (˚ C/W) 2 ase 50˚C (C Transient Thermal Resistance 1 0 e Temp) 25˚C (Cas mp) (Case Te 75˚C M aximum Power Dissipa ti on P C (W) 0 V B E (sat) 15 I B =100m A 2 Collector Current I C (A) 200m A 4 1 emp 400mA 6 12 eT 600 mA 14 ˚C Collector Current I C (A) 8 (V C E =4V) 15 as 1A 25 A (C 1.2 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) C 10 Weight : Approx 6.0g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) I C – V CE Characteristics (Typical) 1.4 E tf (µs) 200 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Collect or Cur ren t I C (A) 2 4.0max 20.0min V ase Tstg 2.0±0.1 b IB DC Cur rent Gain h F E a 4.8±0.2 C (C IC 15.6±0.4 9.6 1.8 VCB=500V 5.0±0.2 Ratings ICBO 2.0 Conditions V 4.0 Unit 500 19.9±0.3 Ratings VCBO 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 105
- 108. 2SC4445 Application : SwitchingRegulator and General Purpose External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Unit V ICBO VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 3(Pulse6) A hFE IC=10mA 800min VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 60(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max 150 °C fT VCE=12V, IE=–0.3A 15typ MHz °C COB VCB=10V, f=1MHz 50typ pF 3.0 3.3 1.05 +0.2 -0.1 1.5 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 250 357 0.7 10 –5 0.1 –0.35 0.7max 4max 0.7max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 0 1 0 2 3 V C E (sat) 2 0 0.01 4 0.05 Collector-Emitter Voltage V C E (V) 0.1 0.5 1 7 5 Sw it ching Time –55˚C 10 5 0.1 0.5 1 3 t s tg V C C 250V I C :I B1 :–I B 2 =10:1.5:5 Transient Thermal Resistance 25˚C 1 tf 0.5 t on 0.1 0.1 0.5 1 2 0.3 P c – T a Derating 10 50 Ma xim um Powe r Dissipat io n P C (W) Collector Curr ent I C (A) nk 5 si 1000 at 500 40 he 100 1000 ite Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 0.05 Collector-Emitter Voltage V C E (V) 100 fin 0.05 106 10 In 0.5 0.1 50 1 ith s 1 0.1 p) 0.5 W 0µ µs 10 Without Heatsink Natural Cooling 1.2 60 50 0.5 1.0 Time t(ms) 5 1 0.8 1 10 5 0.6 4 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 10 0.4 Collector Current I C (A) Collector Current I C (A) 5 0.2 θ j-a – t Characteristics t on •t stg • t f – I C Characteristics (Typical) t o n• t s t g• t f (µ s) 125˚C 0.05 0 Base-Emittor Voltage V B E (V) (V C E =4V) 2 0.01 mp) 0 3 Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) 50 1 e Tem p) –55˚C (Case Tem p) 25˚C (Case Tem Temp) 125˚C (Case e Te V B E (sat) 1 2 (Cas 25˚C (Case Temp) 125˚C (Case Temp) Cas –55˚C (Case Temp) (Cas 50mA (V C E =4V) 25˚C 100mA 1 E ˚C ( 200m A C Weight : Approx 6.5g a. Part No. b. Lot No. 3 θ j - a ( ˚ C/W) Collector Current I C (A) 300m A 2 3.35 1.5 125 I B =700mA 500 mA DC C urrent G ain h FE 4.4 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 3 B 0.65 +0.2 -0.1 5.45±0.1 tf (µs) I C – V CE Characteristics (Typical) 0.8 2.15 5.45±0.1 sTypical Switching Characteristics (Common Emitter) Collector Curr ent I C (A) 1.75 –55˚C –55 to +150 V 16.2 Tstg 3.45 ±0.2 ø3.3±0.2 a b V Tj 5.5±0.2 mp) IC 23.0±0.3 VEBO 15.6±0.2 5.5 Conditions 900 9.5±0.2 Unit VCBO Symbol Symbol 0.8±0.2 sElectrical Characteristics Ratings e Te sAbsolute maximum ratings (Ta=25°C) 1.6 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) 20 Without Heatsink 100 Collector-Emitter Voltage V C E (V) 500 1000 3.5 0 0 50 100 Ambient Temperature Ta(˚C) 150
- 109. 2SC4466 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SA1693) sElectrical Characteristics V ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 6 A hFE Unit VCB=120V 10max µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 15.6±0.4 9.6 2.0 Conditions 50min∗ a VCE(sat) IC=2A, IB=0.2A 1.5max V W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 110typ pF –55 to +150 °C ∗hFE Rank 2 3 O(50 to100), P(70 to140), Y(90 to180) 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 5.45±0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 10 3 10 –5 0.3 –0.3 0.16typ 2.60typ 0 0 1 2 3 0 0.5 1.0 (V C E =4V) DC Cur rent Gain h FE 125˚C Typ 50 1 100 25˚C –30˚C 50 20 0.02 56 ) Temp (Case 1 0.1 Collector Current I C (A) 0.5 1 56 5 1 0.5 0.3 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1.5 Base Current I B (A) 300 e Tem 2A 0 4 h FE – I C Characteristics (Typical) 30 0.02 mp) p) I C =6A 4A Collector-Emitter Voltage V C E (V) 100 2 –30˚C I B =10mA 1 (Cas 20mA 2 4 25˚C 30mA 2 e Te 50 mA 4 (V C E =4V) 6 3 Cas A 80m ˚C ( A 125 1 m 00 Collector Current I C (A) A θ j - a (˚ C/W) 15 0m I C – V BE Temperature Characteristics (Typical) Transient Thermal Resistance A Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) 0m 1.4 E 0.34typ 20 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 20 60 10 si nk Collector Curr ent I C ( A) at Without Heatsink Natural Cooling he 0.5 ite 1 40 fin 10 DC In 20 5 ith Typ 1m s ms 0m s 10 W 30 10 M aximum Power Dissipa ti on P C (W) 40 Cu t-off Fre quen cy f T (M H Z ) DC Curr ent Gain h F E C tf (µs) 30 0.65 +0.2 -0.1 5.45±0.1 B 6 2.0±0.1 ø3.2±0.1 4.0max A 60(Tc=25°C) 20.0min 3 PC I C – V CE Characteristics (Typical) 4.8±0.2 b IB Tstg 1.8 120 5.0±0.2 Unit VCBO External Dimensions MT-100(TO3P) (Ta=25°C) Ratings 4.0 Symbol Ratings Symbol 19.9±0.3 sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20 Without Heatsink 0 –0.02 0.1 –0.1 –1 Emitter Current I E (A) –6 5 10 50 Collector-Emitter Voltage V C E (V) 100 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 107
- 110. 2SC4467 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SA1694) sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE V 50min∗ a VCE(sat) IC=3A, IB=0.3A 1.5max V W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF –55 to +150 °C ∗hFE Rank 2 1.05 +0.2 -0.1 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 10 4 10 –5 0.4 –0.4 0.13typ 3.50typ C Weight : Approx 6.0g a. Part No. b. Lot No. 0.32typ V CE ( sat ) – I B Characteristics (Typical) I B =10mA 0 0 1 2 3 0 4 0 0.1 0.2 0.3 0.4 0 0 (V C E =4V) 200 Typ 50 1 5 100 25˚C –30˚C 50 20 0.02 8 Transient Thermal Resistance DC Curr ent Gain h FE 125˚C 100 0.1 Collector Current I C (A) 0.5 ) Temp mp) (Case 1.5 1 5 3 1 0.5 0.3 8 1 10 100 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 1.0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 e Te 0.5 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 mp) 4A 2A 0.5 0.6 0.7 0.8 0.9 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 2 I C =8A Collector-Emitter Voltage V C E (V) 20 0.02 e Te 1 –30˚C 2 Cas 20mA 4 (Cas 4 6 ˚C ( 50m A 2 25˚C 75 m A 6 (V C E =4V) 8 3 125 A Collector Current I C (A) m 100 I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/W) A Collector-Emitter Saturation Voltage V C E (s at) (V ) A A 0m 20 350m Collector Current I C (A) 1 m 50 1.4 E tf (µs) 40 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) 8 2.0±0.1 3 O(50 to100), P(70 to140), Y(90 to180) sTypical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 4.8±0.2 ø3.2±0.1 4.0max A 80(Tc=25°C) 20.0min 3 PC Tstg 15.6±0.4 9.6 b IB Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 40 80 20 10 10 s 40 at si nk Without Heatsink Natural Cooling he 0.5 ite 10 1 60 fin 20 DC In Collector Cur rent I C (A) 5 Typ ith M aximum Power Dissipa ti on P C ( W) 30 m 100ms W Cut-o ff Fr equ ency f T (M H Z ) DC Curr ent Gain h FE 4.0 120min IC=50mA VCE=4V, IC=3A 19.9±0.3 Symbol 1.8 Conditions V 5.0±0.2 Unit 160 2.0 Ratings VCBO Symbol 20 Without Heatsink 0 –0.02 –0.1 –1 Emitter Current I E (A) 108 –8 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 111. 2SC4468 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SA1695) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Unit VCB=200V 10max µA V IEBO VEB=6V 10max µA V VCEO 140 VEBO 6 V V(BR)CEO IC 10 A hFE 140min IC=50mA V 50min∗ VCE=4V, IC=3A 15.6±0.4 9.6 4.0 200 a VCE(sat) IC=5A, IB=0.5A 0.5max V W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ pF –55 to +150 °C ∗hFE Rank 2 3 O(50 to100), P(70 to140), Y(90 to180) 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 5.45±0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 12 5 10 –5 0.5 –0.5 0.24typ 4.32typ C 0.40typ I B =10mA 0 0 1 2 3 2 I C =10A 0 4 0 0.5 1.0 1.5 0 2.0 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 Typ 100 50 1 5 125˚C 25˚C 100 –30˚C 50 20 0.02 10 Transient Thermal Resistance DC Curr ent Gain h FE 300 0.5 Temp) 1 0.1 Collector Current I C (A) 0.5 1 5 10 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 Base Current I B (A) h FE – I C Characteristics (Typical) ) 5A Collector-Emitter Voltage V C E (V) 20 0.02 4 (Case 2 1 Temp 20mA –30˚C 4 6 (Case 50 mA 2 25˚C 75 m A 6 8 mp) A e Te 100m (V C E =4V) 10 3 Cas Collector Current I C (A) 8 mA ˚C ( 150 125 A Collector Current I C (A) 2 m 00 I C – V BE Temperature Characteristics (Typical) θ j - a (˚C /W) 30 A 0m Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 40 0m A 10 1.4 E tf (µs) 60 0.65 +0.2 -0.1 5.45±0.1 B I C – V CE Characteristics (Typical) 2.0±0.1 ø3.2±0.1 4.0max A 100(Tc=25°C) 20.0min 4 PC Tstg 4.8±0.2 b IB Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 100 30 3m s 10 100 Collector-Emitter Voltage V C E (V) 200 Collector Curre nt I C ( A) nk 50 si 10 50 at 5 he 0.1 3 ite Without Heatsink Natural Cooling fin Emitter Current I E (A) –10 0.5 In –1 1 ith –0.1 s 0 –0.02 ms 10 10 20 DC 5 0m Typ 10 30 W M aximum Power Dissipa ti on P C (W) 40 Cut- off F req uency f T (M H Z ) DC Cur rent Gain h FE 1.8 ICBO VCBO 5.0±0.2 Ratings Symbol Unit 2.0 Conditions Ratings 19.9±0.3 Symbol Application : Audio and General Purpose 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 109
- 112. 2SC4495 High hFE LOW VCE(sat) Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 50 V IEBO VEBO 6 V V(BR)CEO IC 3 A Conditions hFE Ratings Unit VCB=80V Symbol 10max µA VEB=6V 10max µA IC=25mA 50min V VCE=4V, IC=0.5A 500min fT Tj 150 °C COB –55 to +150 V 40typ MHz 30typ pF °C Tstg 3.9 VCE(sat) W 1.35±0.15 1.35±0.15 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 20 20 1 10 –5 15 –30 0.45typ 1.60typ 0.85typ Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) I B =0.5mA 0 0 1 2 3 4 5 3A 2A 0.5 0 6 1 10 100 0 1000 (V C E =4V) 5000 125˚C 25˚C –55˚C 1000 1000 500 1 Transient Thermal Resistance D C Cur r ent Gai n h FE Typ 500 100 50 20 0.01 3 0.1 Collector Current I C (A) 1.5 0.5 1 3 7 5 1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 3000 0.5 0.5 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 Base Current I B (mA) h FE – I C Characteristics (Typical) 100 0.01 1 I C =1A Collector-Emitter Voltage V C E (V) Temp) 0.5 (Case 1mA –55˚C 1 1.5 Tem p) mp) 2mA 2 se 3mA 1 e Te 5m A (Cas 2 2.5 25˚C Collector Current I C (A) 8mA (Ca A ˚C 12m (V CE =4V) 3 1.5 125 1 A 8m θ j- a ( ˚C/W) A I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 0m B C E V CE ( sa t ) – I B Characteristics (Typical) 3 2.4±0.2 2.2±0.2 VCC (V) DC Cur rent Gain h FE 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b 13.0min A 25(Tc=25°C) 0.5max VCB=10V,f=1MHz 1 PC IC=1A, IB=20mA VCE=12V, IE=–0.1A IB 10.1±0.2 4.0±0.2 V 0.8±0.2 Unit 80 8.4±0.2 Ratings VCBO Symbol External Dimensions FM20(TO220F) (Ta=25°C) ±0.2 sElectrical Characteristics 16.9±0.3 sAbsolute maximum ratings (Ta=25°C) Application : Audio Temperature Compensation and General Purpose Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 1m 10 40 m s s 20 DC 0m Collect or Cur ren t I C (A) Typ s 10 Cu t-off Fre quen cy f T ( MH Z ) 5 M aximum Power Dissipa tion P C (W) 10 60 1 0.5 Without Heatsink Natural Cooling 0.1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 20 W ith In 150x150x2 1 00x 1 0 10 0x 2 fin ite he at si nk 50x50x2 Without Heatsink 2 0 –0.005 –0.01 0.05 –0.1 Emitter Current I E (A) 110 –1 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 113. 2SC4511 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SA1725) ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 6 A hFE Unit 10max µA VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 10.1±0.2 50min∗ A VCE(sat) IC=2A, IB=0.2A 0.5max V 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 110typ pF –55 to +150 °C ∗hFE Rank 1.35±0.15 1.35±0.15 O(50 to100), P(70 to140), Y(90 to180) 2.54 sTypical Switching Characteristics (Common Emitter) 0.3 Collector Current I C (A) 5 50 mA 4 3 30mA 2 20mA I B =10mA 1 0 0 1 2 3 2 1 2A 0 0 0.5 1.0 (V C E =4V) 200 Typ 50 1 100 25˚C –30˚C 50 20 0.02 56 Transient Thermal Resistance DC Cur rent Gain h FE 125˚C 0.1 Collector Current I C (A) 1 0.5 2 θ j-a – t Characteristics 1 56 5 1 0.5 0.4 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 20 10 10 si nk 0.1 at Without Heatsink Natural Cooling he 0.5 ite 1 20 fin Collector Curre nt I C ( A) s In 10 0m ith 20 DC W Typ s 10 5 30 m M aximum Power Dissipa ti on P C (W) 40 Cu t-off Fre quen cy f T (M H Z ) DC Curr ent Gain h F E 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 300 0.5 0 1.5 Base Current I B (A) (V C E =4V) 0.1 2 I C =6A 4 h FE – I C Characteristics (Typical) 30 0.02 4 4A Collector-Emitter Voltage V C E (V) 100 (V CE =4V) 6 3 ) A 80m Temp A I C – V BE Temperature Characteristics (Typical) (Case 1 m 00 0.34typ –30˚C A B C E ˚C ( 15 0m Collector-Emitter Saturation Voltage V C E (s at) (V ) 20 A 2.60typ V CE ( sat ) – I B Characteristics (Typical) 6 0m 0.16typ –0.3 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) tstg (µs) 125 I C – V CE Characteristics (Typical) ton (µs) IB2 (A) Cas e Te mp (Cas e Tem ) p) –5 10 3 IB1 (A) Collector Current I C (A) 10 30 VBB2 (V) VBB1 (V) IC (A) 2.4±0.2 2.2±0.2 θ j- a ( ˚C/W) RL (Ω) VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 25˚C Tstg 3.9 3 PC ø3.3±0.2 a b 13.0min IB 4.2±0.2 2.8 c0.5 4.0±0.2 V 0.8±0.2 Unit 120 Conditions VCB=120V Ratings VCBO Symbol External Dimensions FM20(TO220F) (Ta=25°C) Ratings 8.4±0.2 Symbol ±0.2 sElectrical Characteristics 16.9±0.3 sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 10 Without Heatsink 2 0 –0.02 –0.1 –1 Emitter Current I E (A) –6 0.05 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 111
- 114. 2SC4512 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SA1726) sAbsolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose sElectrical Characteristics External Dimensions MT-25(TO220) (Ta=25°C) Unit VCB=120V 10max µA VCEO 80 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC=25mA 80min V IC 6 A hFE VCE=4V, IC=2A 50min Symbol 10.2±0.2 3 A VCE(sat) IC=5A, IB=0.2A 0.5max V PC 50(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 110typ pF –55 to +150 °C Tstg ∗hFE Rank 12.0min IB 1.35 2.5 2.5 1.4 B C E VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 30 10 3 10 –5 0.3 –0.3 0.16typ 2.60typ 0.34typ 20mA 2 I B =10mA 0 0 1 2 3 1 I C =6A 0 0.5 1.0 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 Typ 50 1 100 25˚C –30˚C 50 20 0.02 56 Transient Thermal Resistance DC Cur rent Gain h FE 125˚C 0.5 0 1 0.1 Collector Current I C (A) 0.5 1 56 θ j-a – t Characteristics 5 1 0.5 0.4 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1.5 Base Current I B (A) 300 ) 2A 0 4 h FE – I C Characteristics (Typical) 30 0.02 2 4A Collector-Emitter Voltage V C E (V) 100 4 Temp 30mA 2 (Case 50 mA 4 (V CE =4V) 6 3 –30˚C A 80m Cas e Te mp (Cas e Tem ) p) A 25˚C 1 m 00 ˚C ( A 125 15 0m Collector Current I C (A) A I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) 0m Weight : Approx 2.6g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) 20 DC Curr ent Gain h F E b 0.65 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 6 2.0±0.1 ø3.75±0.2 a O(50 to100), P(70 to140), Y(90 to180) I C – V CE Characteristics (Typical) 4.8±0.2 3.0±0.2 Ratings ICBO 16.0±0.7 Conditions V 8.8±0.2 Unit 120 4.0max Ratings VCBO Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 20 50 10 100ms 5 m s –0.1 –1 Emitter Current I E (A) 112 –6 0.05 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 nk 0 –0.02 si 0.1 at Without Heatsink Natural Cooling he 0.5 30 ite 10 1 fin 20 40 In Typ DC ith Collector Curre nt I C ( A) 30 W Cu t-off Fre quen cy f T (M H Z ) 10 Ma xim um Powe r Dissipation P C (W) 40 20 10 2 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 115. 2SC4517/4517A Silicon NPN TripleDiffused Planar Transistor (High Voltage Switchihg Transistor) ICBO VCB=800V 100max µA VEB=7V 100max 550min V hFE VCE=4V, IC=1A 10.1±0.2 µA IC=10mA 10 to 30 VCEO 550 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IC 2SC4517 2SC4517A IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.25A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 35typ 13.0min 3.9 V 1.35±0.15 1.35±0.15 250 1 250 –5 10 0m 300mA Collector Current I C (A) 200 mA 150 mA 2 100m A 1 0 I B =40mA 0 1 2 3 4max 0.7max tf (µs) 0.5max 1.0 V B E (sat) 0.5 0.5 1 0 5 7 5 t o n• t s tg • t f (µ s) Switching Ti me 25˚C –55˚C 10 1 3 t s tg V C C 250V I C :I B 1 :I B2 =1:0.15:–0.45 1 tf 0.5 t on 0.1 0.2 0.5 1 3 0.5 0.3 P c – T a Derating 30 5 500 1000 100 500 Collector-Emitter Voltage V C E (V) 1000 nk 100 2SC4517A si 50 0.01 50 at 0.05 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% he 0.1 20 ite Collecto r Cur rent I C (A) 1 0.5 2SC4517 Collector-Emitter Voltage V C E (V) 1000 fin Without Heatsink Natural Cooling 100 In 0.1 10 10 ith 1 5 1 Time t(ms) s 0.5 1.0 W Co lle ctor Cu rren t I C (A) 0µ µs 0.8 1 Maxim um Power Dissi pation P C (W) 50 0.6 4 10 10 0.01 2 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) 0.05 Transient Thermal Resistance 125˚C 5 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 50 0.5 1 V C E (sat) 0.1 (V C E =4V) 0.1 2 Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) 0.05 (V CE =4V) 3 I C /I B =5 Const. Collector-Emitter Voltage V C E (V) 5 0.02 I C – V BE Temperature Characteristics (Typical) 1.5 0 0.03 0.05 4 Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) A Collector-Emitter Saturation Voltage V C E (sa t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 40 tstg (µs) ton (µs) –0.45 0.15 I C – V CE Characteristics (Typical) 3 IB2 (A) IB1 (A) VBB2 (V) VBB1 (V) Collector Current I C (A) IC (A) RL (Ω) 2.4±0.2 2.2±0.2 θ j - a (˚ C/W) VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) DC Cur rent Gain h FE ø3.3±0.2 a b pF Tstg 4.2±0.2 2.8 c0.5 4.0±0.2 1000 Unit 0.8±0.2 900 Conditions V 2SC4517 2SC4517A VCBO External Dimensions FM20(TO220F) Ratings Symbol Unit ±0.2 Ratings (Ta=25°C) 8.4±0.2 Symbol Application : Switching Regulator and General Purpose sElectrical Characteristics (Ta=25°C) 16.9±0.3 sAbsolute maximum ratings 10 Without Heatsink 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 113
- 116. 2SC4518/4518A Silicon NPN TripleDiffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose Conditions V ICBO VCB=800V 100max External Dimensions FM20(TO220F) µA Unit 2SC4518 2SC4518A 10.1±0.2 VEB=7V V V A hFE µA 550min V 10 to 25 V(BR)CEO 5(Pulse10) 100max IEBO 7 IC=10mA VCE=4V, IC=1.8A 550 VEBO IB 2.5 A VCE(sat) IC=1.8A, IB=0.36A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=1.8A, IB=0.36A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.35A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ 13.0min 3.9 V 1.35±0.15 1.35±0.15 –5 10 1.8 IB1 (A) 0.27 5 0 70 600mA mA 400 mA Collector Current I C (A) 4 250 mA 3 150 mA 2 I B =50mA 1 0 0 1 2 3 0.7max –0.9 0.5max 4max 1.0 V B E (sat) 0.5 0.5 1 5 0 –55˚C 10 1 5 1 tf 0.5 t on 0.1 0.2 0.5 1.0 1.2 5 1 0.5 0.3 1 10 100 1000 Time t(ms) P c – T a Derating 35 nk Collector Curr ent I C ( A) si 1000 at 500 Collector-Emitter Voltage V C E (V) 10 Without Heatsink 0.05 0.03 50 20 he 0.1 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% ite Without Heatsink Natural Cooling 0.5 fin 0.5 1 In 1 30 ith M aximum Power Dissip ation P C (W) s W Collecto r Curr ent I C (A) 1 5 100 0.8 10 5 50 0.6 4 20 0µ 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area 20 10 0.2 Collector Current I C (A) Safe Operating Area (Single Pulse) 114 t s tg V C C 250V I C :I B 1 :I B 2 =1:0.15:–0.5 Collector Current I C (A) 10 0 Base-Emittor Voltage V B E (V) Transient Thermal Resistance Swi tchi ng T im e 25˚C 0.05 0.03 10 2 10 7 5 t on• t s t g • t f (µ s) 125˚C 0.1 3 V C E (sat) 0.1 t on •t stg • t f – I C Characteristics (Typical) 50 0.5 4 1 (V C E =4V) 0.1 (V CE =4V) 5 Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) 0.05 I C – V BE Temperature Characteristics (Typical) I C /I B =5 Const. Collector-Emitter Voltage V C E (V) 5 0.02 B C E 1.5 0 0.03 0.05 4 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) tstg (µs) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at ) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) I C – V CE Characteristics (Typical) ton (µs) IB2 (A) Collector Current I C (A) 139 250 VBB2 (V) VBB1 (V) IC (A) 2.4±0.2 2.2±0.2 θ j - a (˚C /W) RL (Ω) VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) DC Cur rent Gain h F E ø3.3±0.2 a b pF Tstg 4.2±0.2 2.8 c0.5 4.0±0.2 1000 VCEO IC Ratings Symbol Unit 0.8±0.2 900 (Ta=25°C) 8.4±0.2 VCBO sElectrical Characteristics 16.9±0.3 Ratings Symbol 2SC4518 2SC4518A ±0.2 sAbsolute maximum ratings (Ta=25°C) 2SC4518 100 500 Collector-Emitter Voltage V C E (V) 2SC4518A 1000 2 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 117. 2SC4546 Silicon NPN TripleDiffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose IEBO V(BR)CEO IC 7(Pulse14) A IB 2 V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A 0.7max IC=3A, IB=0.6A 1.3max V V 30(Tc=25°C) W VBE(sat) Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF 13.0min 3.9 PC –5 200m A 3 2 I B =50m A 1 0 0 1 2 3 I C / I B =5 Const. 6 0.5 125˚C (Case Temp) 25˚C (Case Temp) 0 0.02 4 0.05 0.1 0.5 1 5 0 10 10 1 5 7 t s tg 1 0.5 tf t on 0.1 0.05 V C C 200V I C :I B1 :I B 2 =5:1:–2 0.02 0.2 0.5 5 1 0.5 0.3 0µ 10 10 P c – T a Derating he at si nk Co lle ctor Cu rren t I C ( A) ite Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% fin 0.5 20 In Without Heatsink Natural Cooling 1 ith 5 1 1000 30 s 5 100 Time t(ms) Ma xim um Powe r Dissipat io n P C (W) 10 1 W Collector Cur rent I C (A) 1 4 20 20 1.0 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.5 Collector Current I C (A) Collector Current I C (A) 0.5 Transient Thermal Resistance t o n• t s t g• t f (µ s) Sw it ching Time DC C urrent G ain h FE 25˚C –30˚C 0.5 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 2 125˚C 0.1 2 Collector Current I C (A) (V C E =4V) 0.05 3 1 h FE – I C Temperature Characteristics (Typical) 5 0.02 4 –30˚C (Case Temp) Collector-Emitter Voltage V C E (V) 50 5 p) 4 (V C E =4V) 7 1.0 Tem 300 mA I C – V BE Temperature Characteristics (Typical) se 40 0m A 5 0.15max (Ca 60 0m A 6 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 800mA 1A 2max 0.5max Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I C Characteristics (Typical) I C – V CE Characteristics (Typical) 7 –1.2 0.6 tf (µs) ˚C 10 tstg (µs) ton (µs) 125 3 67 IB2 (A) IB1 (A) Collector Current I C (A) 200 VBB2 (V) VBB1 (V) 2.4±0.2 2.2±0.2 θ j- a ( ˚ C/W) IC (A) RL (Ω) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) VCC (V) 1.35±0.15 25˚C Tstg ø3.3±0.2 a b 0.8±0.2 µA 400min 8.4±0.2 100max 16.9±0.3 VEB=7V IC=25mA ) V 4.2±0.2 2.8 c0.5 Temp V 7 10.1±0.2 (Case 400 VEBO µA –30˚C VCEO 100max 4.0±0.2 ICBO mp) V Unit e Te 600 Ratings VCB=600V VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions Symbol Unit ±0.2 sElectrical Characteristics Ratings Symbol (Cas sAbsolute maximum ratings (Ta=25°C) 10 Without Heatsink 2 0.1 10 50 100 Collector-Emitter Voltage V C E (V) 500 700 0.1 10 50 100 Collector-Emitter Voltage V C E (V) 500 700 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 115
- 118. 2SC4557 Silicon NPN TripleDiffused Planar Transistor (High Voltage Switchihg Transistor) Ratings Unit ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 28 A VCE(sat) IC=5A, IB=1A 0.5max 80(Tc=25°C) W VBE(sat) IC=5A, IB=1A 1.2max V Tj 150 °C fT VCE=12V, IE=–1A 6typ MHz °C COB VCB=10V, f=1MHz 105typ 3.3 pF 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 5.45±0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 50 5 10 –5 0.75 –1.5 1max 5max 0.5max I B =100mA 2 0 0 1 2 3 ase 125˚C (C 0.05 0.1 0.5 Te m –5 5 1 0 10 10 –5 5˚ C 10 1 5 10 t s tg 5 V C C 250V I C :I B1 :–I B2 =10:1.5:3 1 0.5 t on tf 0.1 0.2 0.5 20 1 5 10 0.5 0.1 1 10 P c – T a Derating fin ite he 40 at si nk Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 60 In Collect or Cur re nt I C (A) 1000 ith 1 0.5 100 W 5 Without Heatsink Natural Cooling 1.2 80 10 1 1.0 Time t(ms) s 5 0.8 1 Ma xim um Powe r Dissipat io n P C (W) 0µ 0.6 θ j-a – t Characteristics 20 10 0.4 2 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) 0.5 Transient Thermal Resistance t o n• t s t g• t f (µ s) 25 ˚C Sw it ching Time DC C urrent G ain h FE 125˚ C 0.5 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 50 ) 5˚C (V C E =4V) 0.1 p) p) Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) 0.05 em 25˚C V C E (sat) Collector-Emitter Voltage V C E (V) 5 0.02 4 2 0 0.02 4 eT –55˚C (Case Temp) Temp) 25˚C (Case p) ase Tem 125˚C (C 6 Cas 200mA 4 V B E (sat) 1 8 (Case 400m A 6 (V CE =4V) 10 2 25˚C Collector Current I C (A) 600 mA E ˚C ( 80 0m A 8 C Weight : Approx 2.0g a. Part No. b. Lot No. 125 1A Collector Current I C (A) A 3.35 1.5 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) θ j- a (˚ C/W) 1.2 B V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 10 Collector Cur rent I C (A) 4.4 tf (µs) 250 0.65 +0.2 -0.1 5.45±0.1 1.5 I C – V CE Characteristics (Typical) 0.8 2.15 Temp) –55 to +150 1.75 16.2 Tstg 3.0 5 PC 3.45 ±0.2 ø3.3±0.2 a b V IB 5.5±0.2 (Case IC 15.6±0.2 –55˚C VEBO Symbol 5.5 Conditions V 9.5±0.2 Unit 900 23.0±0.3 Ratings VCBO 0.8±0.2 External Dimensions FM100(TO3PF) (Ta=25°C) 1.6 Symbol sElectrical Characteristics Temp sAbsolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 20 Without Heatsink 0.1 10 50 100 500 Collector-Emitter Voltage V C E (V) 116 1000 0.1 10 50 100 500 Collector-Emitter Voltage V C E (V) 1000 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 119. 2SC4662 Silicon NPN TripleDiffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Unit µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=1.5A 10 to 30 ICBO A IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.3A 20typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 30typ pF 3.9 V 13.0min –0.3 0.15 tf (µs) 2.5max 1max 0.5max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) (I C /I B =5) (V C E =4V) 5 2 Collector Current I C (A) p) ase Tem 125˚C (C C 125˚ V C E (sat) 0 0.01 0.05 p) em 2 0.1 0.5 (C 1 as 1 25˚C 0 5 0 0.2 θ j - a ( ˚ C/W) t o n• t s t g• t f (µ s) 25˚C Sw it ching Time –55˚C 10 5 0.01 0.05 0.1 0.5 1 5 V C C 200V I C :I B 1 :I B2 =10:1:–2 t s tg 1 0.5 t on tf 0.1 0.1 0.5 1 3 0.5 0.4 10 10 ite he at si nk Collect or Cur re nt I C (A) fin Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% 20 In 1 0.5 1000 ith 5 Without Heatsink Natural Cooling 100 P c – T a Derating Ma xim um Powe r Dissipat io n P C (W) s 1 0.5 1 W 5 0µ 1.4 30 10 10 1. 2 Time t(ms) 20 20 1.0 1 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.8 5 Collector Current I C (A) Collector Current I C (A) Collector Cur rent I C (A) Transient Thermal Resistance 3 125˚C 0.6 θ j-a – t Characteristics t on •t stg • t f – I C Characteristics (Typical) (V C E =4V) 50 0.4 Base-Emittor Voltage V B E (V) Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) e Te mp) eT Temp) Te 25˚C (Case ˚C ( –55˚C (Case 3 (Cas V B E (sat) Cas –55˚C 1 4 ) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) I C – V CE Characteristics (Typical) Weight : Approx 2.0g a. Part No. b. Lot No. B C E 125 –5 10 tstg (µs) ton (µs) mp 1.5 133 IB2 (A) IB1 (A) Te 200 VBB2 (V) VBB1 (V) 2.4±0.2 2.2±0.2 e IC (A) RL (Ω) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) VCC (V) 1.35±0.15 25˚C Tstg DC C urrent G ain h FE ø3.3±0.2 a b ) 5(Pulse10) Temp V (Case V 10 mp) 400 VEBO 4.2±0.2 2.8 c0.5 –55˚C VCEO 10.1±0.2 4.0±0.2 100max V 0.8±0.2 VCB=500V 500 16.9±0.3 Ratings VCBO IC External Dimensions FM20(TO220F) (Ta=25°C) Conditions Symbol Unit ±0.2 sElectrical Characteristics Ratings Symbol 8.4±0.2 sAbsolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 10 Without Heatsink 2 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 117
- 120. 2SC4706 Silicon NPN TripleDiffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol Application : Switching Regulator and General Purpose sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Unit 100max µA VCEO 600 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 600min V 14(Pulse28) A hFE VCE=4V, IC=7A 10 to 25 IB 7 A VCE(sat) IC=7A, IB=1.4A 0.5max PC 130(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.2max 150 °C fT VCE=12V, IE=–1.5A 6typ MHz –55to+150 °C COB VCB=10V, f=1MHz 160typ pF 3 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 35.7 7 10 –5 1.05 –3.5 1max 5max C Weight : Approx 6.0g a. Part No. b. Lot No. 0.7max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 200mA 4 I B =100mA 2 0 1 0 2 3 V B E (sat) 6 4 2 0.05 0.1 Collector-Emitter Voltage V C E (V) 0.5 1 5 0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-Emittor Voltage V B E (V) Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) ) V C E (sat) 0 0.02 4 8 Temp 6 1 (Case 400m A ) 8 10 emp 600mA eT 10 12 e Te 800mA I C /I B =5 Const. (Cas 12 (V CE =4V) 14 2 Cas 1.2 A 25˚C A ˚C ( 6 1. 125 14 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) I C – V CE Characteristics (Typical) 1.4 E tf (µs) 250 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Collector Current I C (A) 2 4.0max V 20.0min Tstg ø3.2±0.1 b V Tj a 2.0±0.1 –55˚C IC 4.8±0.2 mp) VEBO 15.6±0.4 9.6 1.8 VCB=800V Symbol 5.0±0.2 Ratings ICBO 2.0 Conditions V 4.0 Unit 900 19.9±0.3 Ratings VCBO θ j-a – t Characteristics t on •t stg • t f – I C Characteristics (Typical) (V C E =4V) 8 t o n• t s t g• t f (µ s) 50 25˚C Sw it ching Time –55˚C 10 5 0.02 0.05 0.1 0.5 1 5 10 14 5 V C C 250V I C :I B1 :–I B2 =10:1.5:5 1 t on 0.5 tf 0.1 0.2 0.5 10 0µ 14 P c – T a Derating 130 s 500 Collector-Emitter Voltage V C E (V) 1000 Collector Curr ent I C (A) nk 100 si 0.1 50 at Collector-Emitter Voltage V C E (V) 1000 he 500 ite 100 fin 50 0.5 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% In Without Heatsink Natural Cooling 1 ith 1 5 100 W 10 10 Collector Cur rent I C (A) 10 50 50 118 5 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.1 10 1 Collector Current I C (A) Collector Current I C (A) 0.5 t s tg Ma xim um Powe r Dissipat io n P C (W) DC C urrent G ain h FE 125˚C 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 121. 2SC4883/4883A Silicon NPN EpitaxialPlanar Transistor (Complement to type 2SA1859/A) Application : Audio Output Driver and TV Velocity-modulation sAbsolute maximum ratings (Ta=25°C) (Ta=25°C) V ICBO V IEBO IC 2 A V(BR)CEO V µA 10max VEB=6V 180min 150min IC=10mA IB 1 A hFE VCE=10V, IC=0.7A PC 20(Tc=25°C) W VCE(sat) IC=0.7A, IB=70mA 1.0max Tj 150 °C fT VCE=12V, IE=–0.7A 120typ –55 to +150 °C COB VCB=10V, f=1MHz V 30typ Tstg 60 to 240 V MHz pF 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 20 20 1 10 –5 100 –100 0.5typ 1.5typ 0.5typ 0 0 2 4 6 8 1 2 Collector-Emitter Voltage V C E (V) 5 10 50 100 500 (V C E =4V) 100 125˚C Transient Thermal Resistance DC Curr ent Gain h FE 300 Typ 25˚C 100 –55˚C 50 50 0.5 1 30 0.01 2 mp) 0.5 Collector Current I C (A) 0.05 0.1 1 0.5 2 7 5 1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 1.0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 0 1000 Base Current I B (mA) h FE – I C Characteristics (Typical) 40 0.01 ) I C =2A 1A 0.5A 0 10 1 e Te I B =5mA (Cas 1 2 25˚C A emp 10m eT A Cas Collector Current I C (A) 15m (V C E =4V) 2 3 ˚C ( A 125 30m I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) 60mA θ j- a ( ˚ C/W) 2 Collector-Emitter Saturation Voltage V C E (sa t) (V ) 100mA Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 VCC (V) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 20 5 5 10 50 100 Collector-Emitter Voltage V C E (V) 2 200 Collect or Cur ren t I C (A) nk 1 si –2 10 at Emitter Current I E (A) –1 he 1 0.01 –0.1 ite 20 fin Without Heatsink Natural Cooling 1.2SC4883 2.2SC4883A 0.5 In 0.1 ith 0.5 W 40 s 60 s 80 C 0m 100 ms D 1 10 Typ 120 0 –0.01 1m 10 140 Ma xim um Powe r Dissipat io n P C (W) 160 Cut-o ff Fr equ ency f T (M H Z ) DC Curr ent Gain h FE ø3.3±0.2 a b Temp) 6 180 150 VCB= VEBO (Case 180 –55˚C 150 4.2±0.2 2.8 c0.5 4.0±0.2 VCEO 10.1±0.2 µA 10max 0.8±0.2 V ±0.2 180 External Dimensions FM20(TO220F) Unit 3.9 150 Ratings 2SC4883 2SC4883A Conditions 8.4±0.2 VCBO Symbol 16.9±0.3 2SC4883 2SC4883A Unit 13.0min Ratings Symbol sElectrical Characteristics 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 119
- 122. 2SC4886 Silicon NPN EpitaxialPlanar Transistor (Complement to type 2SA1860) 150 V 5 V V(BR)CEO IC 14 A hFE 100max µA 150min V IEBO VEBO µA VCE=4V, IC=5A 15.6±0.2 50min∗ 3 A VCE(sat) IC=5A, IB=500mA 2.0max 80(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF °C ∗hFE Rank 3.45 ±0.2 ø3.3±0.2 a b V PC 5.5±0.2 Tstg –55 to +150 3.3 3.0 IB 16.2 1.75 1.05 +0.2 -0.1 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 12 5 10 –5 0.5 –0.5 0.26typ 1.5typ 0.35typ 4.4 0 0 1 2 3 0 4 0 0.2 0.4 0.6 0.8 (V C E =4V) 200 Typ 50 5 100 25˚C –30˚C 50 20 0.02 10 14 Transient Thermal Resistance DC Cur rent Gain h FE 125˚C 1 0.1 Collector Current I C (A) 0.5 1 5 0.1 m s s 40 at si nk –1 Emitter Current I E (A) 120 –10 Tem he Without Heatsink Natural Cooling ite 0.5 fin 1 60 In Co lle ctor Cu rre nt I C (A) DC 10 0m M aximum Power Dissipa ti on P C (W) 10 20 0.1 –0.1 se P c – T a Derating s 5 0.05 2 1000 2000 ith 20 100 W 40 (Ca 10 80 10 60 p) p) 1 Time t(ms) 1m Typ ˚C 0.5 40 80 Cut-o ff F requ ency f T (MH Z ) 10 14 1 Safe Operating Area (Single Pulse) (V C E =12V) 2 3 Collector Current I C (A) f T – I E Characteristics (Typical) 0 –0.02 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 0.02 em I C =10A 5A Collector-Emitter Voltage V C E (V) 100 5 –30 I B =20mA 1 eT 50m A 5 10 as 10 0m A 2 (C A 5˚C 150m ˚C A (V C E =4V) 25 Collector Current I C (A) 200m 10 E 14 3 12 A 300m Collector Current I C (A) A C Weight : Approx 6.5g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) θ j - a ( ˚ C/W) 400m V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0m 60 0mA 50 75 0m A 14 B 3.35 1.5 tf (µs) 60 0.65 +0.2 -0.1 5.45±0.1 1.5 VCC (V) I C – V CE Characteristics (Typical) 0.8 2.15 O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) DC Curr ent Gain h F E 0.8±0.2 VCEO Unit IC=25mA ICBO 100max VEB=5V V Ratings VCB=150V Unit 150 5.5 Conditions Symbol Ratings VCBO External Dimensions FM100(TO3PF) (Ta=25°C) 1.6 Symbol sElectrical Characteristics 23.0±0.3 sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 9.5±0.2 LAPT Without Heatsink 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 150 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150
- 123. 2SC4907 Silicon NPN TripleDiffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Unit 1max mA VEB=10V 100max µA IC=25mA 500min V V ICBO VCEO 500 V IEBO VEBO 10 V V(BR)CEO 6(Pulse12) A hFE VCE=4V, IC=2A 10to30 IB 2 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.3max 150 °C fT VCE=12V, IE=–0.5A 8typ MHz °C COB VCB=10V, f=1MHz 45typ pF 3.9 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 200 100 2 10 –5 0.2 –0.4 1max 4.5max 0.5max Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) 0 1 0 2 3 (C 125˚C V C E (sat) 0 0.02 4 Collector-Emitter Voltage V C E (V) 0.05 0.1 0.5 ase Te 25˚C Sw it ching Time –55˚C 10 1 5 6 t s tg V C C 200V I C :I B 1 :I B2 =10:1:–2 1 0.5 t on tf 0.1 0.2 0.5 1 5 6 ) 0.3 1 (Cas 100 1000 P c – T a Derating ite he at si nk Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% 20 fin Collect or Cur re nt I C (A) ) 10 In 1 0.5 emp 0.5 ith Without Heatsink Natural Cooling 1.4 30 5 1 1.2 W 5 1.0 Time t(ms) 10 s 0.8 1 M aximum Power Dissipa ti on P C ( W) 0µ 0.6 4 20 10 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 20 10 0.2 Collector Current I C (A) Collector Current I C (A) 0.5 Transient Thermal Resistance 7 5 t o n• t s t g• t f (µ s) 125˚C 0.5 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 50 0.1 mp 0 5 (V C E =4V) 0.05 Te 1 C 5˚ –5 1 se T se m Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 2 –55˚C 1 25˚C 3 (Ca I B =100mA p) –55˚C (Case Tem Temp) 25˚C (Case Temp) (Case 125˚C (Ca 2 1 4 ˚C 200mA V B E (sat) θ j - a ( ˚ C/W) 3 5 25˚C 300m A (V C E =4V) 6 125 400m A 4 2 Collector Current I C (A) 600m A I C – V BE Temperature Characteristics (Typical) (I C /I B =5) p) 80 0m A 1A 5 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 6 B C E V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 VCC (V) Collect or Cur ren t I C (A) 1.35±0.15 mp) –55 to +150 V 13.0min Tstg DC C urrent G ain h FE ø3.3±0.2 a b V Tj 4.2±0.2 2.8 c0.5 e Te IC 10.1±0.2 16.9±0.3 Unit 600 4.0±0.2 Ratings VCB=600V Ratings VCBO Symbol 0.8±0.2 Conditions Symbol External Dimensions FM20(TO220F) (Ta=25°C) ±0.2 sElectrical Characteristics 8.4±0.2 sAbsolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 10 Without Heatsink 2 0.1 10 50 100 500 Collector-Emitter Voltage V C E (V) 1000 0.1 10 50 100 500 Collector-Emitter Voltage V C E (V) 1000 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 121
- 124. 2SC4908 Silicon NPN TripleDiffused Planar Transistor (High Voltage Switchihg Transistor) V ICBO VCEO 800 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A hFE Conditions Ratings Unit VCB=800V 100max µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10.1±0.2 10 to 30 16.9±0.3 IC Symbol IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max 150 °C fT VCE=12V, IE=–0.3A 6typ MHz °C COB VCB=10V, f=1MHz 40typ pF ø3.3±0.2 a b V Tj –55 to +150 3.9 V 13.0min Tstg 1.35±0.15 1.35±0.15 IC (A) RL (Ω) 250 0.7 357 VBB2 (V) VBB1 (V) IB2 (A) tstg (µs) ton (µs) –0.35 0.1 5max 1max tf (µs) Weight : Approx 2.0g a. Part No. b. Lot No. B C E 1max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) 0 0 1 2 3 0.1 Collector-Emitter Voltage V C E (V) 0.5 1 5 t on• t s t g • t f (µ s) –30˚C 10 5 0.5 1 3 t s tg V C C 250V I C :I B 1 :I B2 =2:0.3:–1 Transient Thermal Resistance 25˚C Swi tchi ng T im e D C Cur r ent Gai n h F E 125˚C 0.1 1 tf 0.5 t on 0.2 0.1 0.5 p) ase Tem mp) mp) 0.4 0.8 1.0 1.2 1 3 1 0.5 0.3 1 10 100 1000 Time t(ms) Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.6 4 Collector Current I C (A) Collector Current I C (A) P c – T a Derating 35 5 5 30 s at si nk Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 20 he 0.5 ite Without Heatsink Natural Cooling fin 0.5 1 In 1 ith 0µ W 10 M aximum Power Dissipa ti on P C (W) 10 Collector Curr ent I C (A) 10 Collector Curr ent I C ( A) 0.2 θ j-a – t Characteristics t on •t stg • t f – I C Characteristics (Typical) 50 0.05 0 Base-Emittor Voltage V B E (V) (V C E =4V) 2 0.02 e Te 0 5 Collector Current I C (A) h FE – I C Characteristics (Typical) ase Te V C E (sat) 0 0.03 0.05 4 1 –30˚C (C I B =20mA V B E (sat) (Cas 60mA 1 1 2 25˚C (C 140mA 125˚C 200m A 2 I C /I B =5 Const, θ j - a (˚C /W) Collector Current I C (A) 300m A (V C E =4V) 3 2 Collector Current I C (A) 400 mA 50 3 Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 0m A I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 IB1 (A) –5 10 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) VCC (V) 4.2±0.2 2.8 c0.5 4.0±0.2 900 0.8±0.2 Unit VCBO External Dimensions FM20(TO220F) (Ta=25°C) 8.4±0.2 Ratings ±0.2 sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol Application : Switching Regulator and General Purpose 10 Without Heatsink 0.1 50 100 500 Collector-Emitter Voltage V C E (V) 122 1000 0.1 50 100 500 Collector-Emitter Voltage V C E (V) 1000 2 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 125. 2SC5002 Silicon NPN TripleDiffused Planar Transistor (High Voltage Switchihg Transistor) A IB 3.5 A PC 80(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg 0.8±0.2 5.5 ø3.3±0.2 a b 3.0 V 7(Pulse14) 1.6 6 IC V V MHz pF 1.75 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) –5 700 mA 5 4 400 mA 3 200m A 2 I B =100 mA 1 0 1 0 2 3 I C – V BE Temperature Characteristics (Typical) (I C : I B = 5 :1) 6 2 1 0 0.02 4 0.1 Collector-Emi tter Voltage V C E (V) 0.5 1 5 0 20 –3 0˚ C 5 0.1 0.5 1 5 7 10 . V C C =200V . I C : I B 1 : –I B 2 =5 :1: 2 t stg Transient Thermal Resistance t s t g • t f (µ s) 25˚ C Swi tchi ng T im e DC C urrent G ain h FE 125˚C 0.05 0 5 tf 1 0.5 0.1 0.2 0.5 0.5 1 5 7 3 1 0.5 0.1 1 10 1000 2000 P c – T a Derating 20 20 100 Time t(ms) Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 1.5 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) 1.0 Base-Emittor Voltage V B E (V) t stg •t f – I C Characteristics (Typical) 100 2 0.02 2 10 (V C E =5V) 10 4 Collector Current I C (A) h FE – I C Characteristics (Typical) 50 (V CE =5V) 7 3 mp) Collector Current I C (A) 6 E e Te 1. 2A C 125˚C A Collector-Emitter Saturation Voltage V C E (s at) (V) 1.5 0.2max VCE(sat)–IC Characteristics (Typical) I C – V CE Characteristics (Typical) 7 4.0max –1.6 0.8 Weight : Approx 6.5g a. Part No. b. Lot No. tf (µs) B 3.35 1.5 (Cas 10 4.4 25˚C (C 4 50 tstg (µs) IB2 (A) IB1 (A) Collector Current I C (A) 200 VBB2 (V) VBB1 (V) 0.65 +0.2 -0.1 5.45±0.1 1.5 θ j- a (˚ C/W) IC (A) RL (Ω) 0.8 2.15 5.45±0.1 VCC (V) 3.45 ±0.2 3.3 VEBO 5.5±0.2 Temp) V 15.6±0.2 (Case 800 100max 1max 100max 800min 8min 4 to 9 5max 1.5max 4typ 100typ –30˚C VCEO ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Unit µA mA µA V mp) V External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz ase Te 1500 Symbol 9.5±0.2 VCBO sElectrical Characteristics Unit 23.0±0.3 Ratings Symbol 16.2 sAbsolute maximum ratings (Ta=25°C) Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose 80 100µs 40 at si nk Collecto r Curr ent I C (A) he Collector Cur rent I C (A) ite Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% fin 0.5 In 1 60 ith Without Heatsink Natural Cooling 5 W 5 Maxim um Power Dissipation P C (W) 10 10 20 Without Heatsink 1 100 500 Collector-Emitter Voltage V C E (V) 1000 0.1 50 100 500 1000 Collector-Emitter Voltage V C E (V) 2000 3.5 0 0 50 100 150 Ambient Temperature Ta(˚C) 123
- 126. 2SC5003 V 7(Pulse14) A IB 3.5 A PC 80(Tc=25°C) W 150 °C –55 to +150 °C Tj Tstg V V V MHz pF ø3.3±0.2 a b 1.75 1.05+0.2 -0.1 sTypical Switching Characteristics (Common Emitter) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) tstg (µs) 50 4 10 –5 0.8 –1.6 4.0max 0.2max Weight : Approx 6.5g a. Part No. b. Lot No. I B =100mA 1 0 0 1 2 3 1 0 4 0.2 0.5 Collector-Emitter Voltage V C E (V) 1 5 20 t s t g• t f ( µ s) ˚C 0˚C 5 2 0.02 0.05 0.1 0.5 1 5 7 . V C C =200V . I C : I B 1 : –I B 2 =5 :1: 2 10 Transient Thermal Resistance Swit ching Time 5˚C –3 0.5 t stg 5 tf 1 0.5 0.1 0.2 0.5 1 5 7 1 0.5 0.1 1 10 1000 2000 P c – T a Derating 20 20 100 Time t(ms) Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 1.5 3 Collector Current I C (A) Collector Current I C (A) 1.0 θ j-a – t Characteristics t stg •t f – I C Characteristics (Typical) 50 10 0 Base-Emittor Voltage V B E (V) (V C E =5V) 25 mp) 0 10 Collector Current I C (A) h FE – I C Characteristics (Typical) 12 2 –30˚C 2 4 mp) 300mA 2 e Te 3 6 ase Te 600 mA 4 (I C : I B = 5 :1) (Cas 5 (V CE =5V) 125˚C Collector Current I C (A) 900 mA E 25˚C (C 6 C 7 Collector Current I C (A) 1. 4A 3.35 1.5 I C – V BE Temperature Characteristics (Typical) 3 θ j - a ( ˚C/W) A Collector-Emitter Saturation Voltage V C E (s at) (V) 1.7 B VCE(sat)–IC Characteristics (Typical) I C – V CE Characteristics (Typical) 7 D C Cur r ent Gai n h F E 4.4 tf (µs) 200 0.65 +0.2 -0.1 5.45±0.1 1.5 RL (Ω) 0.8 2.15 5.45±0.1 VCC (V) 3.45 ±0.2 3.0 6 IC VEBO 0.8±0.2 V 5.5±0.2 5.5 800 15.6±0.2 1.6 VCEO ICBO1 ICBO2 ICEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) VFEC fT COB Unit µA mA mA V 3.3 V Ratings 100max 1max 1max 6min 8min 4 to 9 5max 1.5max 2.0max 4typ 100typ Temp) 1500 External Dimensions FM100(TO3PF) (Ta=25°C) Conditions VCB=1200V VCB=1500V VCE=800V IEB=300mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A IEC=7A VCE=12V, IE=–0.5A VCB=10V, f=1MHz Symbol (Case VCBO sElectrical Characteristics Unit E Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose 23.0±0.3 Ratings Symbol ( 50 Ω ) 9.5±0.2 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) C B 16.2 Built-in Damper Diode sAbsolute maximum ratings (Ta=25°C) Equivalent circuit 80 100µs 2000 Collecto r Cur rent I C (A) Collect or Cur ren t I C (A) nk 1000 si 500 Collector-Emitter Voltage V C E (V) 40 at 100 he 124 0.1 50 ite Collector-Emitter Voltage V C E (V) 1000 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% fin 500 0.5 In 1 100 1 60 ith Without Heatsink Natural Cooling 5 W 5 M aximum Po wer Dissipat io n P C (W) 10 10 20 3.5 0 Without Heatsink 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150
- 127. 2SC5071 Silicon NPN TripleDiffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics Symbol External Dimensions MT-100(TO3P) (Ta=25°C) Unit VCB=500V 100max µA V IEBO VEB=10V 100max µA V 500 V VCEO 400 10 15.6±0.4 9.6 IC=25mA 400min A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.3max V Tj 150 °C fT VCE=12V, IE=–1A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF a ø3.2±0.1 4.0max 2 3 5.45±0.1 RL (Ω) 28.5 200 7 VBB2 (V) 10 IB2 (A) ton (µs) tstg (µs) 0.7 –1.4 1.0max 3.0max C Weight : Approx 6.0g a. Part No. b. Lot No. 0.5max I C – V CE Characteristics (Typical) 1.4 E tf (µs) –5 VBB1 (V) IB1 (A) 0.65 +0.2 -0.1 5.45±0.1 B IC (A) 2.0±0.1 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) VCC (V) 4.8±0.2 b V 20.0min Tstg 4.0 V(BR)CEO 12(Pulse24) VEBO 19.9±0.3 V IC 1.8 ICBO VCBO 5.0±0.2 Ratings Unit 2.0 Conditions Ratings Symbol Application : Switching Regulator and General Purpose V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 0 1 0 2 3 12 5˚ 0.5 1 5 t on •t stg • t f – I C Characteristics (Typical) 5 DC Cur rent Gain h F E 125˚C Swi tchi ng T im e 25˚C –30˚C 10 1 5 10 12 1 0.5 tf t on 0.1 0.5 1 10 12 0µ 1 ) 10 e Te (Cas 100 1000 P c – T a Derating 100 Collector Curr ent I C (A) nk Collector-Emitter Voltage V C E (V) 500 si 100 50 at 50 he 10 ite 0.1 5 Without Heatsink Natural Cooling L=3mH I B2 =1.0A Dut y:less than 1% fin 500 0.5 In Without Heatsink Natural Cooling 1 ith 1 5 W 5 Collector-Emitter Voltage V C E (V) mp) ) mp 0.3 Time t(ms) 10 100 emp 0.5 s 10 50 se T 1 M aximum Power Dissipa ti on P C (W) 10 10 Te 3 30 30 Co lle ctor Cu rren t I C (A) 5 1.0 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.1 5 0.5 Collector Current I C (A) Collector Current I C (A) 0.5 t s tg V C C 200V I C :I B1 :I B2 =10:1:–2 Transient Thermal Resistance t on• t s tg • t f (µ s) 40 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 10 Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 2 C 5˚ –5 0.05 0.1 Collector-Emitter Voltage V C E (V) 8 0.02 4 C V C E (sat) 0 0.02 4 (C se 125˚C 6 –55˚C 2 ) emp ase T (Ca I B =100mA e Temp) 25˚C (Cas 8 (Ca 200mA 4 Temp) 25˚C 6 –55˚C (Case 5˚C 400m A 1 12 8 10 V B E (sat) θ j - a (˚ C/W) Collector Current I C (A) 60 0m A Collector Current I C (A) 80 0m A 10 (V CE =4V) 12 as e 25 Temp ) ˚C 1A (C Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 12 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 125
- 128. 2SC5099 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SA1907) sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 120 V VCEO 80 VEBO IC Application : Audio and General Purpose Symbol External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Unit ICBO VCB=120V 10max µA V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 110typ pF –55 to +150 °C ∗hFE Rank IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 10 3 10 –5 0.3 –0.3 0.16typ 2.60typ 5.5 1.6 3.0 0.34typ 4.4 Weight : Approx 6.5g a. Part No. b. Lot No. 0 1 0 2 3 0 4 0 0.5 1.0 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 300 200 D C Cur r ent Gai n h F E 125˚C Typ 50 0.5 1 100 25˚C –30˚C 50 20 0.02 56 ) Temp (Case –30˚C 0 1 0.1 Collector Current I C (A) 0.5 θ j-a – t Characteristics 1 56 5 1 0.5 0.3 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1.5 Base Current I B (A) h FE – I C Characteristics (Typical) 30 0.02 e Te mp e Tem ) p) I C =6A 4A 2A Collector-Emitter Voltage V C E (V) 100 2 (Cas I B =10mA 1 25˚C 20mA 2 4 Cas 30mA 2 ˚C ( 50 mA 4 E (V CE =4V) 125 8 C 6 Collector Current I C (A) 10 0mA θ j- a ( ˚C/W) 15 A 0m Transient Thermal Resistance 0m A 3.35 1.5 I C – V BE Temperature Characteristics (Typical) 3 Collector-Emitter Saturation Voltage V C E (s at) (V ) 20 0m B V CE ( sat ) – I B Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 tf (µs) A 0.8 2.15 1.5 30 Collector Current I C (A) 1.75 1.05 +0.2 -0.1 RL (Ω) I C – V CE Characteristics (Typical) 3.45 ±0.2 ø3.3±0.2 a b 5.45±0.1 VCC (V) 6 5.5±0.2 3.3 O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 20 60 10 si nk Without Heatsink Natural Cooling at 0.5 he 1 40 ite Collect or Cur ren t I C (A) s DC fin 10 s ms In 20 0m 1m ith Typ 5 10 W 30 10 Maxim um Power Dissip ation P C (W) 40 Cut-o ff F requ ency f T (MH Z ) DC C urrent G ain h FE 9.5±0.2 23.0±0.3 15.6±0.2 16.2 Tstg 0.8±0.2 Conditions 20 Without Heatsink 0 –0.02 0.1 –0.1 –1 Emitter Current I E (A) 126 –6 5 10 50 Collector-Emitter Voltage V C E (V) 100 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150
- 129. 2SC5100 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SA1908) IEBO VEBO 6 V V(BR)CEO IC 8 A hFE 50min∗ IC=3A, IB=0.3A VCE(sat) fT 150 °C COB °C ∗hFE Rank pF 1.75 1.05 +0.2 -0.1 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 10 4 10 –5 0.4 –0.4 0.13typ 3.50typ 0.32typ 4.4 Weight : Approx 6.5g a. Part No. b. Lot No. 0 0 1 2 3 0 4 0 0.2 0.4 2A 0.6 0.8 0 1.0 (V C E =4V) Typ 50 1 5 100 25˚C –30˚C 50 20 0.02 8 Transient Thermal Resistance DC Curr ent Gain h FE 125˚C 100 0.1 Collector Current I C (A) 0.5 ) Temp (Case 1.0 1.5 1 5 8 4 1 0.5 0.2 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) mp) 0.5 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 200 e Te 4A Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 mp) I C =8A Collector-Emitter Voltage V C E (V) 20 0.02 2 –30˚C I B =10mA 1 e Te 20mA 2 4 Cas 4 6 (Cas 50m A 2 ˚C ( 6 (V C E =4V) 25˚C 75 m A E 8 125 1 A 00m Collector Current I C (A) A C I C – V BE Temperature Characteristics (Typical) 3 θ j- a ( ˚C/W) A A 0m 20 350m Collector Current I C (A) 15 0m V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V CE Characteristics (Typical) B 3.35 1.5 tf (µs) 40 0.65 +0.2 -0.1 5.45±0.1 1.5 VCC (V) 8 0.8 2.15 O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 20 40 10 he at 40 si nk Collecto r Cur ren t I C (A) ite Without Heatsink Natural Cooling fin 0.5 In 1 60 ith 10 s 20 0m DC 5 Typ s 10 m 30 W Ma xim um Powe r Dissipation P C ( W) 10 Cut -off Fre quen cy f T (MH Z ) DC C urrent G ain h FE 3.45 ±0.2 MHz 200typ 5.5±0.2 ø3.3±0.2 a b V 20typ VCB=10V, f=1MHz A W 0.5max VCE=12V, IE=–0.5A 3 75(Tc=25°C) –55 to +150 V 120min IC=50mA PC Tstg µA VCE=4V, IC=3A IB Tj 10max 15.6±0.2 3.0 V 0.8±0.2 120 µA 5.5 VCEO 10max 3.3 ICBO 9.5±0.2 V Unit VEB=6V 160 Ratings VCB=160V Unit VCBO External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol 1.6 sElectrical Characteristics Ratings 23.0±0.3 Symbol 16.2 sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20 Without Heatsink 0 –0.02 –0.1 –1 Emitter Current I E (A) –8 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 150 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 127
- 130. 2SC5101 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SA1909) Application : Audio and General Purpose sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) External Dimensions FM100(TO3PF) (Ta=25°C) Unit VCB=200V 10max µA VCEO 140 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 10 A hFE V 140min IC=50mA 15.6±0.2 VCE=4V, IC=3A 23.0±0.3 Symbol 50min∗ A VCE(sat) IC=5A, IB=0.5A 0.5max W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ ø3.3±0.2 a b V 80(Tc=25°C) –55 to +150 ∗hFE Rank °C pF 1.75 16.2 Tstg 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 5.45±0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 12 5 10 –5 0.5 –0.5 0.24typ 4.32typ 0.40typ Weight : Approx 6.5g a. Part No. b. Lot No. 2 10mA 0 0 1 2 3 2 I C =10A 5A 0 4 0 0.5 Collector-Emitter Voltage V C E (V) 1.0 1.5 0 2.0 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 Typ 100 50 1 5 125˚C 25˚C 100 –30˚C 50 20 0.02 10 Transient Thermal Resistance DC Curr ent Gain h F E 300 0.5 1 0.1 Collector Current I C (A) 0.5 1 5 10 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emitter Voltage V B E (V) (V C E =4V) 0.1 0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 0.02 4 Temp) 1 (Case 20mA –30˚C 4 6 e Te mp) Temp ) 50 mA 2 (Case 75 m A 6 8 25˚C A E (V CE =4V) Cas 100m C 10 3 ˚C ( mA 125 150 Collector Current I C (A) A 3.35 1.5 I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) 2 m 00 Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 00 30 A 0m B V CE ( sat ) – I B Characteristics (Typical) IB =4 Collector Current I C (A) 8 DC Cur rent Gain h FE 4.4 tf (µs) 60 0.65 +0.2 -0.1 5.45±0.1 1.5 10 0.8 2.15 O(50 to 100), P(70 to 140), Y(90 to 180) I C – V CE Characteristics (Typical) 3.45 ±0.2 3.0 4 PC 5.5±0.2 3.3 IB 0.8±0.2 Ratings ICBO 5.5 Conditions V 1.6 Unit 200 9.5±0.2 Ratings VCBO Symbol Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 si nk Collector Curre nt I C (A) 40 at Without Heatsink Natural Cooling he 0.5 ite 1 60 fin C In D ith 10 5 ms s 0m 20 10 Typ 10 Cut- off F req uency f T (M H Z ) 10 30 W M aximum Power Dissipa ti on P C (W) 30 40 20 Without Heatsink 0 –0.02 –0.1 –1 Emitter Current I E (A) 128 –10 0.1 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150
- 131. 2SC5124 Silicon NPN TripleDiffused Planar Transistor (High Voltage Switchihg Transistor) 6 V IC 10(Pulse20) A IB 5 A PC 100(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg V V MHz pF 0.8±0.2 1.75 1.05 +0.2 -0.1 1.5 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 33.3 6 10 –5 1.2 –2.4 0.1typ 4.0typ 0.2typ I C – V CE Characteristics (Typical) 4.4 A 1. 8A Collector Current I C (A) 8 1. 2A 6 700 mA 4 300 mA 2 0 I B =100mA 0 1 2 3 3.35 1.5 Weight : Approx 6.5g a. Part No. b. Lot No. C E I C – V BE Temperature Characteristics (Typical) (V C E =5V) 10 I C / I B =5:1 Collector Current I C (A) 2.4 VCE(sat)–IC Characteristics (Typical) 3 Collector-Emitter Saturation Voltage V C E (s at) (V ) 10 B 0.65 +0.2 -0.1 5.45±0.1 tf (µs) 200 0.8 2.15 sTypical Switching Characteristics (Common Emitter) RL (Ω) 3.45 ±0.2 ø3.3±0.2 a b 5.45±0.1 VCC (V) 5.5±0.2 3.0 VEBO 15.6±0.2 5.5 V Unit µA mA µA V 100max 1max 100max 800min 8min 4 to 9 5max 1.5max 3typ 130typ 1.6 800 Ratings Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCE=12V, IE=–1A VCB=10V, f=1MHz 3.3 VCEO Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB 9.5±0.2 V 23.0±0.3 Unit 1500 External Dimensions FM100(TO3PF) (Ta=25°C) 19.1 16.2 Ratings VCBO Symbol Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) 2 1 8 6 4 2 0 0.02 4 0.05 0.1 Collector-Emitter Voltage V C E (V) 0.5 1 5 0 10 0 0.5 h FE – I C Characteristics (Typical) 1.0 Base-Emittor Voltage V B E (V) Collector Current I C (A) θ j-a – t Characteristics t stg •t f – I C Characteristics (Typical) (V C E =5V) 10 t o n• t s tg • t f (µ s) 125˚C 25˚C Switching Ti me DC Curr ent Gain h FE 40 –55˚C 10 5 3 0.02 0.1 0.5 1 5 10 t s tg 5 V C C 200V I C :I B 1 :–I B 2 =5:1:2 1 0.5 tf 0.1 0.2 0.5 1 5 10 Collector Current I C (A) Collector Current I C (A) Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 30 30 100 0µ 10 500 Collector-Emitter Voltage V C E (V) 1000 0.1 50 100 500 1000 Collector-Emitter Voltage V C E (V) 2000 nk 100 si 50 50 at 10 he 5 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% ite 0.1 0.5 fin 0.5 1 In 1 5 ith Co lle ctor Cu rre nt I C (A) s 5 W Maximu m Power Dissipa tion P C (W) 10 10 Collector Curre nt I C ( A) P c – T a Derating 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 129
- 132. 2SC5130 Silicon NPN TripleDiffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose Conditions Ratings Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min V ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 IC 10.1±0.2 V A VCE(sat) IC=1.5A, IB=0.3A 0.5max 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.3A 20typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 30typ pF 13.0min Tstg 3.9 2 PC ø3.3±0.2 a b V IB 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 133 1.5 10 –5 0.15 –0.3 1max 2max VCE(sat)–IC Characteristics (Typical) 1 2 3 0.05 0.1 0.5 1 0 5 2 Swi tchi ng T im e –55˚C 10 1 5 t s tg 1 Transient Thermal Resistance t on• t s t g • t f (µ s) 25˚C 0.5 0.5 t on tf V C C 200V I C :I B 1 :–I B2 =10:1:2 0.1 0.1 0.5 1 3 0.5 0.4 ) (Case Temp mp) 100 1000 P c – T a Derating fin ite he at si nk Without Heatsink Natural Cooling L=3mH –IB2=0.5A Duty:less than 1% 20 In Without Heatsink Natural Cooling 1 0.5 e Te 10 ith 0.5 1 W 1 1.4 30 5 s 1.2 Time t(ms) 10 µs 1.0 1 Maximu m Power Dissi pation P C ( W) 50 0µ Co lle ctor Cu rre nt I C ( A) 10 0.8 5 20 20 0.6 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 5 0.4 Collector Current I C (A) Collector Current I C (A) 10 0.2 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 125˚C 0.1 0 Collector Current I C (A) (V C E =4V) 0.05 p) –55˚C (Case Temp) 0 0.01 4 h FE – I C Characteristics (Typical) 5 0.01 em 1 Collector-Emitter Voltage V C E (V) 50 eT 25˚C (Case Temp) θ j - a (˚ C/W) 0 2 –55˚C I B =50mA 1 125˚C (Case Temp) 0.5 3 Cas 2 1.0 (Cas 15 0m A 4 ˚C ( 30 0m A 3 I C / I B =5 Const. 25˚C 50 0m A 5 1.5 125 mA 4 Collector Current I C (A) I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) 800 DC C urrent G ain h FE B C E (V C E =4V) 5 Collecto r Cur ren t I C (A) Weight : Approx 2.0g a. Part No. b. Lot No. 0.3max 0 2.4±0.2 2.2±0.2 VCC (V) I C – V CE Characteristics (Typical) 4.2±0.2 2.8 c0.5 4.0±0.2 Unit 600 16.9±0.3 Ratings VCBO 0.8±0.2 Symbol External Dimensions FM20(TO220F) (Ta=25°C) ±0.2 Symbol sElectrical Characteristics 8.4±0.2 sAbsolute maximum ratings (Ta=25°C) 10 Without Heatsink 2 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 130 500 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 133. 2SC5239 Silicon NPN TripleDiffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose sElectrical Characteristics External Dimensions MT-25(TO220) (Ta=25°C) Ratings Unit ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 VEBO IC Symbol 10.2±0.2 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.25A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 35typ 4.0max 12.0min 1.35 2.5 2.5 1.4 B C E VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 250 1 10 –5 0.15 –0.45 0.7max 4.0max Weight : Approx 2.6g a. Part No. b. Lot No. tf (µs) 250 0.5max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V CE Characteristics (Typical) Collector Current I C (A) 150 mA 2 100m A 1 I B =40mA 0 1 2 3 5 1.5 I C /I B =5 Const. 4 1.0 V B E (sat) 0.5 0.1 0.5 1 0 5 t on •t stg • t f – I C Characteristics (Typical) 25˚C Swit ching Time –55˚C 10 1 5 6 t s tg V C C 250V I C :I B 1 :I B2 =1:0.15:–0.45 1 tf 0.5 t on 0.1 0.2 0.5 50 10 0µ 10 100 1000 Time t(ms) P c – T a Derating 50 500 Collector-Emitter Voltage V C E (V) 1000 Collector Curr ent I C ( A) nk 100 si 50 at 0.01 10 he 0.05 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 30 ite 0.1 fin Collector-Emitter Voltage V C E (V) 500 0.5 40 In 100 1 ith Without Heatsink Natural Cooling 50 1 W 0.1 10 0.3 s 0.5 0.01 0.5 7 5 µs 1 0.05 3 1 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 7 5 1 4 Collector Current I C (A) Collector Current I C (A) 1.0 θ j-a – t Characteristics M aximu m Power Dissip ation P C (W) 0.5 Transient Thermal Resistance 7 5 t o n • t s t g• t f ( µ s) 125˚C 0.1 0.5 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 0 Collector Current I C (A) h FE – I C Characteristics (Typical) 5 4 0.02 2 V C E (sat) Collector-Emitter Voltage V C E (V) 40 3 1 0 0.03 0.05 4 Collector Current I C (A) 300mA 200 mA 0 I C – V BE Temperature Characteristics (Typical) (V C E =4V) A θ j- a ( ˚C/W) 40 0m Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 3 DC C urrent G ain h FE b 0.65 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) Co lle ctor Cu rr ent I C (A) 2.0±0.1 ø3.75±0.2 a pF Tstg V 4.8±0.2 3.0±0.2 Conditions V 16.0±0.7 Unit 900 8.8±0.2 Ratings VCBO Symbol 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 131
- 134. 2SC5249 Silicon NPN TripleDiffused Planar Transistor (High Voltage Switchihg Transistor) sElectrical Characteristics ICBO 600 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IB 1.5 PC 35(Tc=25°C) Tj µA 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V °C fT VCE=12V, IE=–0.3A 6typ MHz °C COB VCB=10V, f=1MHz 50typ pF 13.0min 3.9 V 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 200 200 1 10 –5 0.1 –0.1 1.0max 19max 1.0max Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) 0 0 1 2 3 0 0.01 4 Collector-Emitter Voltage V C E (V) 0.05 0.1 0.5 1 30 t o n • t s tg • t f (µ s) 100 25˚C Switching Ti me –55˚C 10 0.5 1 3 t s tg Transient Thermal Resistance 125˚C 0.1 0 mp) e Te (Cas 0.5 10 V C C 200V 5 I C :I B1 :–I B 2 =10:1:1 t on tf 1 0.5 0.2 0.1 θ j-a – t Characteristics 0.5 1 3 3 1 0.5 0.3 1 10 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 5 35 si nk 0.05 10 at 0.05 10 20 he 0.1 ite 0.1 Without Heatsink Natural Cooling L=3mH –IB2=–1.0A Duty:less than 1% fin Without Heatsink Natural Cooling 0.5 In 0.5 1 ith 1 30 W Collect or Cur ren t I C (A) µs Ma xim um Powe r Dissipation P C ( W) 5 1000 P c – T a Derating 7 100 7 100 Time t(ms) Collector Current I C (A) Collector Current I C (A) 1.0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 200 0.05 p) 0 3 (V C E =4V) 5 0.01 1 Collector Current I C (A) h FE – I C Characteristics (Typical) 50 Tem 25˚C (Case Temp) –55˚C (Case Temp) 25˚C I B =20mA 125˚C (Case Temp) se 50mA 1 2 (Ca 100m A ˚C 2 I C / I B =5 Const. 125 Collector Current I C (A) 200 mA (V C E =4V) 3 0.5 Collector Current I C (A) 300mA I C – V BE Temperature Characteristics (Typical) θ j- a (˚ C/W) 3 B C E VCE(sat)–IC Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 VCC (V) DC Cur rent Gain h FE 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) Collecto r Cur ren t I C (A) ø3.3±0.2 a b 0.8±0.2 VCE=4V, IC=1A 4.2±0.2 2.8 c0.5 8.4±0.2 V hFE 16.9±0.3 µA 600min –55 to +150 Tstg 100max 150 IC VEB=7V IC=10mA 10.1±0.2 ) VCEO 100max Temp V Unit (Case 600 External Dimensions FM20(TO220F) (Ta=25°C) Ratings –55˚C VCBO Symbol 4.0±0.2 Unit Conditions VCB=600V Ratings Symbol ±0.2 sAbsolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 10 Without Heatsink 50 100 Collector-Emitter Voltage V C E (V) 132 500 50 100 Collector-Emitter Voltage V C E (V) 500 2 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 135. 2SC5271 Silicon NPN TripleDiffused Planar Transistor VCBO 300 V ICBO VCEO 200 V IEBO VEBO 7 V V(BR)CEO 5(Pulse10) A hFE1 IB 2 A hFE2 VCE=2V, IC=1mA 30(Tc=25°C) W VCE(sat) IC=2.5A, IB=0.5A 1.0max Tj 150 °C VBE(sat) IC=2.5A, IB=0.5A 1.5max V –55 to +150 °C fT VCE=12V, IE=–0.5A 10typ MHz COB VCB=10V, f=1MHz 45typ pF External Dimensions FM20(TO220F) 15min PC Tstg Unit 100max µA VEB=7V 100max µA IC=10mA 200min V 10 to 30 V 150 RL (Ω) 60 IC (A) 2.5 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b 3.9 VCE=2V, IC=2.5A 10.1±0.2 16.9±0.3 VCB=300V 13.0min IC Ratings 4.0±0.2 (Ta=25°C) Conditions 0.8±0.2 Symbol Unit ±0.2 sElectrical Characteristics Ratings Symbol 8.4±0.2 sAbsolute maximum ratings (Ta=25°C) Application : Resonant Switching Regulator and General Purpose VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 10 –5 0.5 –1.0 0.3max 1.0max Weight : Approx 2.0g a. Part No. b. Lot No. 0.1max B C E 133
- 136. 2SC5287 Silicon NPN TripleDiffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) External Dimensions MT-100(TO3P) (Ta=25°C) Unit 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 5(Pulse10) A hFE VEBO IC IC=10mA 550min VCE=4V, IC=1.8A 10 to 25 a 2.5 A VCE(sat) IC=1.8A, IB=0.36A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=1.8A, IB=0.36A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.35A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ 3 1.05 +0.2 -0.1 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 139 1.8 10 –5 0.27 –0.9 0.7max 4.0max C Weight : Approx 6.0g a. Part No. b. Lot No. 0.5max 600mA 400 mA 250 mA 3 150 mA 2 I B =50mA 1 2 3 4 6 1.0 V B E (sat) 0.5 0 0.03 0.05 0.1 0.5 25˚C Switching T im e –55˚C 10 1 5 10 tf 0.5 t on 0.1 0.2 0.5 50 10 5 0.5 0.3 1 10 µs P c – T a Derating fin ite he 40 at si nk 0.1 0.1 Without Heatsink Natural Cooling IB2=–1.0A L=3mH Duty:less than 1% In 0.5 ith 1 60 W Without Heatsink Natural Cooling 20 0.05 0.05 100 Collector-Emitter Voltage V C E (V) 500 1000 80 5 0.5 100 Time t(ms) 10 s 1 134 1 1 Reverse Bias Safe Operating Area Collecto r Cur rent I C (A) 0µ 1.0 3 Collector Current I C (A) 20 50 0.5 θ j-a – t Characteristics 20 10 0 Base-Emittor Voltage V B E (V) 1 Safe Operating Area (Single Pulse) 0.03 10 0 t s tg V C C 250V I C :I B1 :I B 2 =1:0.15:–0.5 Collector Current I C (A) 5 2 5 7 6 5 t on • t s t g • t f ( µ s) 125˚C 0.5 1 t on •t stg • t f – I C Characteristics (Typical) (V C E =4V) 0.1 3 Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 4 1 Collector-Emitter Voltage V C E (V) 5 4 0.02 5 V C E (sat) θ j - a (˚ C/W) 1 I C /I B =5 Const. Maxim um Power Dissi pation P C (W) 0 7 1.5 Transient Thermal Resistance mA 4 40 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 0 70 Collector Current I C (A) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) (V CE =4V) 5 0 1.4 E tf (µs) 250 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Collecto r Cur rent I C (A) 2 4.0max 20.0min V sTypical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 2.0±0.1 ø3.2±0.1 pF Tstg 4.8±0.2 b IB D C Cur r ent Gai n h F E 15.6±0.4 9.6 1.8 VCB=800V Symbol 5.0±0.2 Ratings ICBO 2.0 Conditions V 4.0 Unit 900 19.9±0.3 Ratings VCBO Symbol 0.03 50 Without Heatsink 100 500 Collector-Emitter Voltage V C E (V) 1000 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 137. 2SC5333 Silicon NPN TripleDiffused Planar Transistor ICBO IEBO V V(BR)CEO IC 2 A hFE VEB=6V 1.0max mA IC=25mA 300min V VCE=4V, IC=0.5A 10.1±0.2 30min A VCE(sat) IC=1.0A, IB=0.2A 1.0max V 35(Tc=25°C) W fT VCE=12V, IE=–0.2A 10typ MHz Tj 150 °C COB VCB=10V, f=1MHz 75typ pF –55to+150 °C 1.35±0.15 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) IB1 (A) 0.1 0 1 2 to p 3 2 1 0 0.1 0.2 h FE – I C Characteristics (Typical) (V C E =4V) 10 1000 2000 125 100 ˚C Transient Thermal Resistance DC Cur r ent Gai n h F E Typ 50 0.2 25˚C 50 10 3 –30 5 10 ˚C 50 100 0.4 f T – I E Characteristics (Typical) 1.0 500 1000 2000 1 0.5 0.3 1 10 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 35 ith In fin ite 20 he at si nk Maxim um Power Dissip ation P C (W) 30 W 10 0.8 θ j-a – t Characteristics 20 Typ 0.6 4 Collector Current I C (mA) Collector Current I C (mA) Cut- off F req uency f T (M H Z ) DC Cur r ent Gai n h F E 200 100 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =4V) 10 0 0.3 Base Current I B (A) 200 3 1 2A I C =1A Collector-Emitter Voltage V C E (V) 100 (V CE =4V) 2 3 0 4 I C – V BE Temperature Characteristics (Typical) mp) 1 0 1.0typ e Te Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) mA A /s I B =2 0m 4.0typ Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sa t ) – I B Characteristics (Typical) 2 I tf (µs) 0.3typ –0.2 I C – V CE Characteristics (Typical) 200 B= tstg (µs) (Cas –5 1.0 ton (µs) IB2 (A) 125˚C 100 100 VB2 (V) IC (A) Collector Current I C (A) RL (Ω) 2.4±0.2 2.2±0.2 θ j- a (˚C /W ) VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 25˚C (C Tstg 3.9 0.2 PC ø3.3±0.2 a b 13.0min IB 4.2±0.2 2.8 c0.5 p) V 6 mA mp) 300 VEBO 1.0max ase Te VCEO VCB=300V ase Tem V External Dimensions FM20(TO220F) Unit –30˚C (C 300 Ratings 4.0±0.2 VCBO Conditions Symbol 0.8±0.2 Unit 8.4±0.2 Ratings Symbol (Ta=25°C) ±0.2 sElectrical Characteristics 16.9±0.3 sAbsolute maximum ratings (Ta=25°C) Application : Series Regulator, Switch, and General Purpose 10 Without Heatsink 0 –0.003 –0.01 –0.05 –0.1 Emitter Current I E (A) –0.5 –1 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 135
- 138. 2SC5370 Silicon NPN EpitaxialPlanar Transistor ICBO VCEO 40 V IEBO VEBO 7 V V(BR)CEO IC 12 A Symbol Ratings Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ 10.1±0.2 IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A 1.2max 150 °C fT VCE=12V, IE=–3A 90typ MHz °C COB VCB=10V, f=1MHz 120typ pF –55to+150 ∗hFE Rank O(70 to 140), Y(120 to 240), G(200 to 400) 3.9 V 13.0min Tstg 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b V Tj 4.0±0.2 V 0.8±0.2 Unit 60 External Dimensions FM20(TO220F) 8.4±0.2 Ratings VCBO Symbol (Ta=25°C) ±0.2 sElectrical Characteristics 16.9±0.3 sAbsolute maximum ratings (Ta=25°C) Application : Emergency Lighting Inverter and General Purpose 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 B C E 136 Weight : Approx 2.0g a. Part No. b. Lot No.
- 139. 2SD1769 Darlington Silicon NPN TripleDiffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) C B (2.5kΩ)(200Ω) E Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose sElectrical Characteristics Symbol External Dimensions MT-25(TO220) (Ta=25°C) Unit Conditions VCBO 120 V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 20max mA 6 V V(BR)CEO 6(Pulse10) A hFE IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max Tj 150 °C fT VCE=12V, IE=–0.2A 100typ –55 to +150 °C COB VCB=10V, f=1MHz typ V b 1.35 pF 0.65 +0.2 -0.1 2.5 sTypical Switching Characteristics (Common Emitter) 2.5 1.4 B C E VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 30 10 3 10 –1.5 3 –3 0.5typ 5.5typ Weight : Approx 2.6g a. Part No. b. Lot No. tf (µs) 1.5typ V CE ( sat ) – I B Characteristics (Typical) I B =0.3mA 0 0 2 4 0 6 0.3 1 Collector-Emitter Voltage V C E (V) 5 10 50 (V C E =2V) 10000 Typ D C Cur r ent Gai n h FE 5000 1000 500 0.5 1 5 1000 5˚C ˚C 25 500 –3 12 0˚ C 100 50 30 0.03 0.05 0.1 10 Collector Current I C (A) 0.5 p) ) 2 1 5 10 10 1 5 0.5 0.2 1 5 10 50 100 1000 5000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) mp) 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 10000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =2V) 80 0.03 0 100 Base Current I B (mA) h FE – I C Characteristics (Typical) 5000 2 Temp 4A 2A 1 4 (Case 2 I C =6 A Tem 0 .4 m A e Te 4 se A A 0 .5 m 6 (Ca 0 .7 m 2 (Cas A 1mA ˚C 1 .5 m 6 8 25˚C 3 (V CE =2V) 3 125 5m 2mA mA θ j - a (˚C /W) m A Transient Thermal Resistance 10 A Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) 20 m A 8 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) I C – V CE Characteristics (Typical) 2.0±0.1 ø3.75±0.2 a V MHz 4.8±0.2 –30˚C Tstg 16.0±0.7 V 120min 2000min 8.8±0.2 IC=10mA VCE=2V, IC=3A 4.0max IC 10.2±0.2 12.0min VEBO Unit 3.0±0.2 Ratings Ratings Symbol Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 20 120 50 100 Collector-Emitter Voltage V C E (V) 200 Collector Curre nt I C ( A) nk 50 si 10 at 5 he 0.08 3 30 ite –8 fin Emitter Current I E (A) –5 Without Heatsink Natural Cooling In –1 0.5 ith –0.5 1 40 W –0.05 µs 0 C 500 50 s 1m s 3m ms 10 D 5 Ma xim um Powe r Dissipation P C (W) 10 Typ 100 Cu t-of f Fr eque ncy f T (MH Z ) DC Curr ent Gain h F E Equivalent circuit 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 137
- 140. 2SD1785 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SB1258) VCEO 120 V 6 V V(BR)CEO 6(Pulse10) A hFE Unit 10max µA 10max mA IEBO VEBO Conditions ICBO IC Symbol VEB=6V IC=10mA V 120min VCE=2V, IC=3A 10.1±0.2 2000min VCE(sat) W fT VCE=12V, IE=–0.1A 100typ MHz Tj 150 °C COB VCB=10V, f=1MHz 70typ pF –55 to +150 °C Tstg 1.5max IC=2A, IB=3mA 3.9 A 30(Tc=25°C) 13.0min 1 PC RL (Ω) VCC (V) IC (A) 10 30 VBB1 (V) 3 10 –1.5 0.5typ –3 B C E 1.5typ 5.5typ I C – V BE Temperature Characteristics (Typical) (V CE =2V) I B =0.3mA 2 0 4 0 6 0.3 1 Collector-Emi tter Voltage V C E (V) 5 10 50 (V C E =2V) 10000 5000 DC C urrent G ain h FE p 1000 500 12 5 25 1000 500 –3 0˚ C 100 50 30 0.03 0.05 0.1 100 1 5˚C ˚C Transient Thermal Resistance Ty 0.5 ) 10 Collector Current I C (A) 0.5 mp) 2 1 5 10 5 1 0.5 1 10 100 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) ) 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 10000 0.1 0.4 Base-Emittor Voltage V B E (V) (V C E =2V) 0.03 0 100 Base Current I B (mA) h FE – I C Characteristics (Typical) 5000 2 e Te 4A 2A 1 4 (Cas 2 I C =6 A emp A 0 .4 m A –30˚C 0 .5 m 4 mp A 6 se T 0 .7 m 2 Te 1mA se 6 A 8 (Ca 1 .5 m 3 (Ca 2mA A 25˚C 3m 5˚C A 12 5m Collector Current I C (A) A θ j- a ( ˚C/W) 0m Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 1 20 Collector Current I C (A) 2.4±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) tstg (µs) V CE ( sa t ) – I B Characteristics (Typical) 8 0 ton (µs) IB2 (mA) 3 I C – V CE Characteristics (Typical) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 IB1 (mA) VBB2 (V) 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) D C Cur r ent Gai n h F E ø3.3±0.2 a b V IB 4.2±0.2 2.8 c0.5 4.0±0.2 V 0.8±0.2 Unit 120 External Dimensions FM20(TO220F) (Ta=25°C) Ratings VCB=120V Ratings (2.5kΩ)(200Ω) E ±0.2 sElectrical Characteristics VCBO B 8.4±0.2 sAbsolute maximum ratings (Ta=25°C) C Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose 16.9±0.3 Darlington Symbol Equivalent circuit Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) he at si nk Collector Curr ent I C (A) ite 0.1 fin Without Heatsink Natural Cooling 20 In 0.5 ith 1 W ms C s 10 50 D 1m 5 Maxim um Power Dissip ation P C (W) 10 Typ 100 Cut- off F req uency f T (MH Z ) 30 20 120 10 Without Heatsink 2 0 –0.05 –0.1 –0.5 –1 Emitter Current I E (A) 138 –5 –8 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 141. 2SD1796 Built-in Avalanche Diode forSurge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor B (3 k Ω)(15 0Ω) E V(BR)CEO hFE VCE=4V, IC=3A 2000min V A VCE(sat) IC=3A, IB=10mA 1.5max V 25(Tc=25°C) W fT VCE=12V, IE=–0.2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 45 typ pF –55 to +150 °C 3.9 0.5 PC 13.0min IB ø3.3±0.2 a b 1.35±0.15 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) 1.0m A 0 .8 m A 0 .6 m A 3 0. 5m A 0.4 mA 2 1 0 0.3mA 1 0 2 1.5typ 3 I C – V BE Temperature Characteristics (Typical) (V CE =2V) 3 4 2 I C= I C= 2 A I C =1 A 1 0 0.2 4 0.5 Collector-Emitter Voltage V C E (V) 4A I C= 3 A 1 5 10 50 0 100 0 1 (V C E =4V) 20000 Typ 5000 1000 500 100 10000 5000 125 Transient Thermal Resistance DC Cur rent åGain h FE 10000 ˚C ˚C 25 0˚C –3 1000 500 100 50 1 50 0.05 4 0.1 0.5 Collector Current I C (A) 1 4 5 1 V C B =10V I E =–2V 0.5 1 10 100 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 20000 0.5 1 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 2 Base Current I B (mA) h FE – I C Characteristics (Typical) 0.05 3 p) =2 A Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) IB 0m 4.0typ B C E V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 4 1.0typ –10 10 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) e Tem –5 10 tstg (µs) (Cas 3 ton (µs) IB2 (mA) IB1 (mA) 125˚C 10 30 VBB2 (V) VBB1 (V) Collector Current I C (A) IC (A) 2.4±0.2 2.2±0.2 θ j- a ( ˚ C/W) RL (Ω) VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 p) A 60±10 p) 4 mA VEB=6V IC=10mA ase Tem IC 10max IEBO V 4.2±0.2 2.8 c0.5 ase Tem V 6 10.1±0.2 25˚C (C 60±10 VEBO µA –30˚C (C VCEO Unit 10max 4.0±0.2 ICBO 0.8±0.2 V 8.4±0.2 Unit 60±10 Ratings VCB=50V Ratings VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions Symbol ±0.2 sElectrical Characteristics Symbol Tstg C Application : Driver for Solenoid, Relay and Motor and General Purpose 16.9±0.3 sAbsolute maximum ratings (Ta=25°C) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =10V) 30 10 s m 10 100 s Typ 60 40 20 s Collector Cur rent I C (A) 0m 80 DC Natural Cooling Silicone Grease Heatsink: Aluminum in mm 1m 10 5 Ma xim um Powe r Dissipat io n P C (W) 120 Cut- off F req uency f T (M H Z ) D C Cur r ent åGai n h FE Equivalent circuit 1 0.5 Without Heatsink Natural Cooling 0.1 20 W ith In 150x150x2 1 00x 1 0 10 0x 2 fin ite he at si nk 50x50x2 Without Heatsink 2 0 –0.01 0.05 –0.1 –1 Emitter Current I E (A) –4 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 139
- 142. 2SD2014 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SB1257) B (3kΩ) (200Ω) E Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose sElectrical Characteristics External Dimensions FM20(TO220F) (Ta=25°C) Ratings Unit VCBO 120 V ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max 150 °C fT VCE=12V, IE=–0.1A 75typ MHz °C COB VCB=10V, f=1MHz 45typ pF ø3.3±0.2 a b V Tj 3.9 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 30 10 3 10 –5 10 –10 1.0typ 4.0typ Weight : Approx 2.0g a. Part No. b. Lot No. 1.5typ 0 0.3mA 0 1 2 3 0 4 1A 0.2 1 Collector-Emitter Voltage V C E (V) 5 10 50 (V C E =4V) 20000 10000 DC C urrent G ain h FE Typ 5000 1000 500 100 5000 125 ˚C ˚C 25 0˚C –3 1000 500 100 50 1 Transient Thermal Resistance 10000 0.5 0 50 30 0.03 4 0.1 Collector Current I C (A) 0.5 p) p) ase Tem 2 1 4 5 1 0.5 1 5 10 50 100 500 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) ase Tem 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 20000 0.1 p) 0 100 Base-Emittor Voltage V B E (V) (V C E =4V) 0.03 1 Base Current I B (mA) h FE – I C Characteristics (Typical) 30 2 25˚C (C 1 2A 1 I C =4 A 3A 3 e Tem 0. 4m A 2 2 (Cas 0. 5m A 125˚C Collector Current I C (A) 0 .6 m A 3 Collector Current I C (A) A (V CE =4V) 4 θ j- a ( ˚ C/W) A 0m 0 .8 m IB =2 A I C – V BE Temperature Characteristics (Typical) 3 Collector-Emitter Saturation Voltage V C E (s at) (V ) 4 m 1.0 B C E V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 –30˚C (C –55 to +150 V 13.0min Tstg 4.2±0.2 2.8 c0.5 4.0±0.2 Conditions Ratings 8.4±0.2 Symbol 16.9±0.3 Symbol 0.8±0.2 sAbsolute maximum ratings (Ta=25°C) C ±0.2 Darlington Safe Operating Area (Single Pulse) P c – T a Derating (V C E =10V) 25 10 si nk Collector Cur rent I C (A) 2 at 0.1 0x he Without Heatsink Natural Cooling 1 00x 1 0 10 ite 0.5 150x150x2 fin 1 20 In 20 s s DC ith 40 m Natural Cooling Silicone Grease Heatsink: Aluminum in mm W Typ 60 0m s 80 10 s 0µ 100 10 30 5 1m M aximu m Power Dissipa tion P C (W) 120 Cut -off Fre quen cy f T ( MH Z ) DC Curr ent Gain h FE Equivalent circuit 50x50x2 Without Heatsink 2 0 –0.02 0.05 –0.05 –0.1 –0.5 –1 Emitter Current I E (A) 140 –4 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 143. 2SD2015 Silicon NPN TripleDiffused Planar Transistor ICBO IEBO V(BR)CEO 4 A mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE(sat) IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ MHz °C COB VCB=10V, f=1MHz 40typ pF 3.9 V 13.0min –55 to +150 Tstg 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 40 20 2 10 –5 10 –10 0.6typ 5.0typ 2.0typ Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) 0.3mA 1 0 0 1 2 3 4 5 I C =4 A 1 3A 2A 1A 0 6 0.2 1 Collector-Emitter Voltage V C E (V) 5 10 50 0 100 (V C E =4V) 20000 Typ 1000 500 100 Transient Thermal Resistance DC C urrent G ain h FE 10000 5000 5000 12 5˚C 25 1000 500 ˚C –3 0˚C 100 0.1 0.5 mp) 0 1 1 50 0.03 0.05 4 0.1 Collector Current I C (A) 0.5 1 4 5 1 0.5 1 5 10 50 100 500 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 20000 0.03 1 Base-Emittor Voltage V B E (V) (V C E =4V) 50 2 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 3 e Te 2 2 Cas 0.4mA ˚C ( 0.5mA 4 125 Collector Current I C (A) 0.6mA 3 (V CE =4V) 3 Collector Current I C (A) 0.8mA A I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/W) IB m =1 Collector-Emitter Saturation Voltage V C E (s at) (V ) 4 B C E V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 VCC (V) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 10 5 10 100ms Collector Cur rent I C (A) 50 40 Typ 30 20 1m m 30 s 0µ s DC 1 0.5 Without Heatsink Natural Cooling 0.1 10 –0.5 –1 Emitter Current I E (A) –4 W ith In 150x150x2 1 00x 1 0 10 0x 2 fin ite he at si nk 50x50x2 2 0.03 –0.05 –0.1 20 Without Heatsink 0.05 0 –0.02 Natural Cooling Silicone Grease Heatsink: Aluminum in mm s Ma xim um Powe r Dissipation P C (W) 60 Cut-o ff F requ ency f T (MH Z ) DC Curr ent Gain h FE ø3.3±0.2 a b p) IC 10max VEB=6V IC=10mA 4.2±0.2 2.8 c0.5 mp) V 10.1±0.2 ase Te V 6 µA ase Tem 120 VEBO 10max –30˚C (C VCEO Unit VCB=150V 4.0±0.2 V Ratings 0.8±0.2 150 External Dimensions FM20(TO220F) (Ta=25°C) Conditions Symbol 25˚C (C Unit VCBO (3kΩ) (500Ω) E ±0.2 sElectrical Characteristics Ratings B 8.4±0.2 sAbsolute maximum ratings (Ta=25°C) C Application : Driver for Solenoid, Relay and Motor and General Purpose 16.9±0.3 Darlington Symbol Equivalent circuit 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 141
- 144. 2SD2016 Silicon NPN TripleDiffused Planar Transistor sElectrical Characteristics V ICBO VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 3 A hFE Conditions VCB=200V Symbol 10max µA 10max mA VEB=6V V 200min IC=10mA 10.1±0.2 1000 to 15000 VCE=4V, IC=1A VCE(sat) IC=1A, IB=1.5mA 1.5max W VBE(sat) IC=1A, IB=1.5mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 90typ MHz °C COB VCB=10V, f=1MHz 40typ pF Tstg –55 to +150 3.9 A 25(Tc=25°C) 13.0min 0.5 PC ø3.3±0.2 a b V IB 4.2±0.2 2.8 c0.5 4.0±0.2 200 Unit 0.8±0.2 Unit VCBO Symbol External Dimensions FM20(TO220F) (Ta=25°C) Ratings ±0.2 Ratings (2kΩ) (200Ω) E 8.4±0.2 sAbsolute maximum ratings (Ta=25°C) B Application : Igniter, Relay and General Purpose 16.9±0.3 Darlington C Equivalent circuit 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sa t ) – I B Characteristics (Typical) 0 1 0 2 3 4 0 0.2 1 Collector-Emitter Voltage V C E (V) (V C E =4V) 10000 DC Curr ent Gain h F E 125 ˚C C 1000 1000 500 Transient Thermal Resistance 5000 5000 25˚ 500 ˚C –55 100 50 100 0.5 1 3 10 0.03 0.1 0.5 f T – I E Characteristics (Typical) p) ase Tem 2 1 3 5 1 0.5 1 5 10 50 100 500 1000 Time t(ms) Collector Current I C (A) Collector Current I C (A) mp) 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 10000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 Ma xim um Powe r Dissipat io n P C (W) 80 Cut- off F req uency f T ( MH Z ) DC Cur rent Gain h FE 0 3 Base Current I B (mA) h FE – I C Characteristics (Typical) 50 0.03 1 12 5˚C –55˚C (C 25˚C e Te –5 5˚C 1 (Cas 1 p) A 25˚C .3m 2 Tem I B= 0 2 se A (Ca 0.5m 2 (V CE =4V) 3 3 ˚C 1mA 125 1.5 mA θ j - a ( ˚ C/W) Collector Current I C (A) 3m A Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) I C – V CE Characteristics (Typical) 60 40 20 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 20 W ith In 150x150x2 1 00x 1 0 10 0x 2 fin ite he at si nk 50x50x2 Without Heatsink 2 0 –0.01 –0.05 –0.1 –0.5 Emitter Current I E (A) 142 –1 –3 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 145. 2SD2017 Silicon NPN TripleDiffused Planar Transistor ( 4k Ω) External Dimensions FM20(TO220F) (Ta=25°C) V ICBO VCEO 250 V IEBO VEBO 20 V V(BR)CEO IC 6 A hFE VCE=2V, IC=2A 2000min Unit 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max 150 °C fT VCE=12V, IE=–1A 20typ MHz °C COB VCB=10V, f=1MHz 65typ pF ø3.3±0.2 a b V Tj 3.9 V 13.0min 1.35±0.15 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) –5 2mA 4 1mA 3 I B = 0 .4 2 mA 1 0 0 1 2 3 4 5 5 2 I C =8A 1 I C =3A 0 0.2 0.5 1 5 10 50 100 0 1 (V C E =2V) 10000 5000 D C Cur r ent Gai n h F E Typ 1000 500 100 1 125 ˚C 25 1000 ˚C –3 0˚C 500 100 50 30 0.03 5 6 0.1 θ j-a – t Characteristics 0.5 1 56 5 1 0.5 0.3 1 5 10 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 10000 0.5 0 500 1000 Base Current I B (mA) (V C E =2V) 0.1 2 1 6 h FE – I C Characteristics (Typical) 50 30 0.03 3 I C =1A Collector-Emitter Voltage V C E (V) 5000 4 e Te mp) (Case Temp ) A –30˚C 4m 6 p) Collector Current I C (A) A (V C E =2V) 3 Tem 8m I C – V BE Temperature Characteristics (Typical) se A 5 3.0typ ˚C 4 m 20 Collector-Emitter Saturation Voltage V C E (s at) (V ) 6 A 16.0typ B C E V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 0m 0.6typ –10 5 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) (Ca 10 tstg (µs) 125 2 ton (µs) IB2 (mA) IB1 (mA) VBB2 (V) Collector Current I C (A) 50 100 VBB1 (V) θ j- a ( ˚ C/W) IC (A) 2.4±0.2 2.2±0.2 Transient Thermal Resistance RL (Ω) VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 (Cas –55 to +150 4.2±0.2 2.8 c0.5 0.8±0.2 VCB=300V 16.9±0.3 Conditions Ratings 4.0±0.2 Unit 300 Symbol ±0.2 sElectrical Characteristics Ratings Tstg E Application : Driver for Solenoid, Relay and Motor and General Purpose VCBO 50 100 500 1000 Time t(ms) P c – T a Derating Safe Operating Area (Single Pulse) (V C E =12V) 30 35 20 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 10 25 s C) 1 150x150x2 at si nk Without Heatsink Natural Cooling 0.05 he 0.1 ite 0.5 20 fin Maximu m Power Dissi pation P C (W) C= In Collector Curr ent I C (A) (T ith 10 C 30 W 20 D. s 5 m 1m 10 Typ Cut- off F req uency f T ( MH Z ) DC Curr ent Gain h F E B 25˚C sAbsolute maximum ratings (Ta=25°C) C 8.4±0.2 Darlington Symbol Equivalent circuit 100x100x2 10 50x50x2 Without Heatsink 0 –0.02 –0.05 –0.1 –0.5 –1 Emitter Current I E (A) –5 –6 0.02 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 300 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 143
- 146. 2SD2045 Silicon NPN TripleDiffused Planar Transistor (2.5kΩ)(200Ω) E Ratings Unit V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V(BR)CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max 150 °C fT VCE=12V, IE=–1A 50typ MHz °C COB VCB=10V, f=1MHz 70typ pF 3.45 ±0.2 ø3.3±0.2 a b V Tj 5.5±0.2 3.0 3.3 1.75 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 10 3 10 –5 3 –3 0.5typ 5.5typ 1.5typ 4.4 1.5 1 0 0 1 2 3 4 5 0.5 0.1 1 5 10 50 (V C E =2V) 10000 D C Cur r ent Gai n h F E 1000 500 5000 12 1000 500 5˚ Transient Thermal Resistance Typ C ˚C 25 C 0˚ –3 100 100 1 50 0.03 5 6 mp) Temp ) e Te 1 0.1 0.5 1 56 5 1 0.5 0.2 1 10 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 10000 0.5 0 Base-Emittor Voltage V B E (V) (V C E =2V) 0.1 0 100 Base Current I B (mA) h FE – I C Characteristics (Typical) 50 0.03 p) 1 Collector-Emitter Voltage V C E (V) 5000 2 2A 0 6 4A 1 3 (Cas I C =8A 4 25˚C 2 2 em A eT .4 m B= 0 Cas I 3 A ˚C ( 0.5m 4 5 125 A 6 θ j- a (˚C /W) Collector Current I C (A) 0.7m E (V C E =2V) 3 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s a t) (V ) A A 2m 5m 20mA 1 mA C I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) 6 5 B 3.35 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) 30 0.65 +0.2 -0.1 5.45±0.1 1.5 VCC (V) I C – V CE Characteristics (Typical) 0.8 2.15 (Case –55 to +150 16.2 Tstg V –30˚C IC 23.0±0.3 .VEBO 15.6±0.2 5.5 Conditions 120 9.5±0.2 Unit VCBO Symbol 0.8±0.2 External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Symbol DC Curr ent Gain h F E B Application : Driver for Solenoid, Motor and General Purpose sElectrical Characteristics (Ta=25°C) C 1.6 Darlington sAbsolute maximum ratings Equivalent circuit 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 50 20 120 Typ 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 Collector Cur rent I C (A) Cut -off Fre quen cy f T ( MH Z ) 20 nk 144 –5 –6 si –1 at –0.5 Emitter Current I E (A) 0.05 3 he 0 –0.05 –0.1 ite 0.1 30 fin Without Heatsink Natural Cooling 20 In 0.5 ith 1 40 W 40 s 60 1m 80 DC ms 5 10 100 M aximum Power Dissipa ti on P C ( W) 10 10 Without Heatsink 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 147. 2SD2081 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SB1259) ICBO VCEO 120 V 6 V A µA 10max mA V(BR)CEO 10(Pulse15) 10max IEBO VEBO Unit IC VEB=6V IC=10mA VCE=4V, IC=5A V 120min hFE 10.1±0.2 2000min A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 2.0max V °C fT VCE=12V, IE=–0.5A 60typ MHz °C COB VCB=10V, f=1MHz 95typ pF 150 Tstg –55 to +150 13.0min Tj 3.9 1 PC ø3.3±0.2 a b V IB 4.2±0.2 2.8 c0.5 4.0±0.2 V Ratings 0.8±0.2 Unit 120 External Dimensions FM20(TO220F) (Ta=25°C) Conditions VCB=120V Ratings VCBO (2kΩ) (200Ω) E ±0.2 sElectrical Characteristics Symbol B 8.4±0.2 sAbsolute maximum ratings (Ta=25°C) C Application : Driver for Solenoid, Motor and General Purpose 16.9±0.3 Darlington Symbol Equivalent circuit 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) I B =0.5mA 0 0 1 2 3 4 5 1A 2 0 6 0.2 0.5 Collector-Emitter Voltage V C E (V) 1 5 10 50 (V C E =4V) 20000 10000 DC Cur rent Gain h F E Typ 5000 1000 500 100 1 5 5000 12 5˚C 25 1000 Transient Thermal Resistance 10000 0.5 500 ˚C –3 0˚C 100 50 30 0.03 10 0.1 Collector Current I C (A) 0.5 p) 2 3 1 5 10 5 1 0.5 0.2 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) p) 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 20000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 120 30 30 10 100 DC si nk 0.1 at 20 he Without Heatsink Natural Cooling ite 1 0.5 20 fin 40 s In 60 5 s ith 80 m W Collector Curre nt I C (A) 10 1m Maximu m Power Dissipa tion P C (W) Typ Cut- off Fr equ ency f T ( MH Z ) DC Cur rent Gain h F E 0 100 200 Base Current I B (mA) h FE – I C Characteristics (Typical) 50 30 0.03 4 ase Tem 5A 1 ase Tem 5 I C =10A 25˚C (C 0. 7m A 6 –30˚C (C 1mA 2 mp) 10 8 e Te 2m A (Cas Collector Current I C (A) 3mA (V C E =4V) 10 125˚C 5mA θ j - a ( ˚C/W) A m 50 1 A 0m I C – V BE Temperature Characteristics (Typical) 3 Collector Current I C (A) I C – V CE Characteristics (Typical) 15 10 Without Heatsink 2 0 –0.05 –0.1 –0.5 –1 Emitter Current I E (A) –5 –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 145
- 148. Equivalent circuit 2SD2082 Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SB1382) Application : Driver for Solenoid, Motor and General Purpose External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Unit Conditions Ratings VCBO 120 V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V(BR)CEO 16(Pulse26) A hFE IC=10mA V 120min VCE=4V, IC=8A 2000min A VCE(sat) IC=8A, IB=16mA 1.5max 75(Tc=25°C) W VBE(sat) IC=8A, IB=16mA 2.5max 150 °C fT VCE=12V, IE=–1A 20typ MHz °C COB VCB=10V, f=1MHz 210typ pF 5.5 V Tj 3.3 1.05 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 5 8 10 –5 16 –16 0.6typ 7.0typ 1.5typ 1.5 0 0 1 2 3 4 5 0 6 0.2 0.5 Collector-Emitter Voltage V C E (V) 1 5 10 50 (V C E =4V) 20000 DC Curr ent Gain h F E 5000 1000 500 5 10 125 ˚C 5000 25 Transient Thermal Resistance 10000 Typ 1 ˚C –30 ˚C 1000 500 100 0.02 16 0.5 1 f T – I E Characteristics (Typical) mp) ) 2 10 5 16 5 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) emp 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 30000 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 100 0.2 ) 0 100 200 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 mp 4 –30 4A Te 8A 1 8 se I C =16A se T 10 12 (Ca I B =1m A 2 (Ca 1. 5m A (V CE =4V) 16 25˚C 3mA 3.35 Weight : Approx 2.0g a. Part No. b. Lot No. E 5˚C Collector Current I C (A) 20 C 12 6mA 3 Collector Current I C (A) A 0.65 +0.2 -0.1 I C – V BE Temperature Characteristics (Typical) θ j - a (˚C /W) m 12 Collector-Emitter Saturation Voltage V C E (sa t) (V ) A A 20 40m m 26 B V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) DC Curr ent Gain h F E 4.4 tf (µs) 40 +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 ˚C ( –55 to +150 1.75 16.2 Tstg 3.0 1 PC 3.45 ±0.2 ø3.3±0.2 a b V IB 5.5±0.2 Cas IC 15.6±0.2 9.5±0.2 VEBO Unit 23.0±0.3 Symbol 0.8±0.2 sElectrical Characteristics Symbol (2kΩ) (100Ω) E 1.6 sAbsolute maximum ratings (Ta=25°C) B e Te Darlington C 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 80 50 0µ s DC 5 –1 Emitter Current I E (A) 146 –5 –10 –16 0.05 0.03 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 nk –0.5 si 0 –0.05 –0.1 40 at Without Heatsink Natural Cooling 0.1 he 0.5 ite 1 60 fin Collector Cur rent I C (A) 10 s In 10 1m ith 20 s W Cut- off F req uenc y f T (MH Z ) 10 m Ma xim um Powe r Dissipat io n P C (W) 10 Typ 20 3.5 0 Without Heatsink 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150
- 149. 2SD2083 Darlington Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SB1383) sAbsolute maximum ratings (Ta=25°C) Ratings VCBO 120 V VCEO 120 Symbol (2kΩ) (100Ω) E Unit 10max µA V IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE V 4.0 120min 2000min 19.9±0.3 IC=25mA VCE=4V, IC=12A 15.6±0.4 9.6 1.8 VCB=120V a 2 A VCE(sat) IC=12A, IB=24mA 1.8max 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max V Tj 150 °C fT VCE=12V, IE=–1A 20typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 340typ ø3.2±0.1 pF V 4.0max 20.0min 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 2 12 10 –5 24 –24 1.0typ 6.0typ C Weight : Approx 6.0g a. Part No. b. Lot No. 1.0typ V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 0 0 1 2 3 4 5 0 0.5 6 1 5 Collector-Emitter Voltage V C E (V) 10 50 100 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 20000 10000 DC Curr ent Gain h F E Typ 5000 1000 500 1 5 10 125 ˚C 5000 25 Transient Thermal Resistance 20000 0.5 ˚C ˚C –30 1000 500 100 0.02 40 0.5 1 10 5 f T – I E Characteristics (Typical) p) ) mp) e Te Cas 2 2.2 40 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) emp eT 1 Base-Emittor Voltage V B E (V) (V C E =4V) 100 0.2 0 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 em 0 500 ˚C ( 10 10 –30 I B =1.5m A 12A 6A 1 se T 3m A 20 I C =25A 2 (Ca 5mA 20 as 8mA (C 30 (V C E =4V) 25 25˚C 12mA 3 5˚C A 12 20m Collector Current I C (A) A I C – V BE Temperature Characteristics (Typical) θ j - a (˚C/W) m 30 1.4 E tf (µs) 24 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Collector Current I C (A) 2 3 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 40 2.0±0.1 b PC I C – V CE Characteristics (Typical) 4.8±0.2 5.0±0.2 ICBO 2.0 Ratings IB 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 120 100 100 1m s –10 0.2 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 nk Emitter Current I E (A) –5 si –1 at –0.5 he 0 –0.1 ite 0.5 fin Without Heatsink Natural Cooling 1 In 5 ith m Collector Cur rent I C (A) s 10 50 DC 10 100 W Ma xim um Powe r Dissipat io n P C (W) 50 Typ Cut -off Fre quency f T (M H Z ) DC Curr ent Gain h F E B External Dimensions MT-100(TO3P) (Ta=25°C) Conditions VEBO Tstg C Application : Driver for Solenoid, Motor and General Purpose sElectrical Characteristics Unit Symbol IC Equivalent circuit 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 147
- 150. Equivalent circuit 2SD2141 Silicon NPNTriple Diffused Planar Transistor 380±50 V ICBO VCEO 380±50 V IEBO VEBO 6 V V(BR)CEO 6(Pulse10) A hFE IC Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA Symbol Unit 330 to 430 V 10.1±0.2 1500min VCE=2V, IC=3A A VCE(sat) IC=4A, IB=20mA 1.5max V 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz 150 °C COB VCB=10V, f=1MHz 95typ pF –55 to +150 °C Tj Tstg 3.9 1 PC ø3.3±0.2 a b 13.0min IB 4.2±0.2 2.8 c0.5 4.0±0.2 Unit VCBO External Dimensions FM20(TO220F) (Ta=25°C) Ratings 0.8±0.2 Ratings ±0.2 sElectrical Characteristics Symbol (1.5kΩ)(100Ω) E 8.4±0.2 sAbsolute maximum ratings (Ta=25°C) B Application : Ignitor, Driver for Solenoid and Motor, and General Purpose 16.9±0.3 Built-in Avalanche Diode for Surge Absorbing Darlington C 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. B C E 2 4 0 6 0.2 Collector-Emitter Voltage V C E (V) 0.5 1 5 10 50 10000 (V C E =2V) 5000 1000 500 100 50 12 5˚ 1000 C 25 500 Transient Thermal Resistance DC Cur rent Gain h F E Typ ˚C –5 5˚ C 100 50 0.1 0.5 1 5 20 0.02 10 0.1 1.0 0.5 f T – I E Characteristics (Typical) Temp 2.4 5 10 5 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) 2.0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 10000 10 0.02 1.0 Base-Emittor Voltage V B E (V) (V C E =2V) 5000 0 Base Current I B (mA) h FE – I C Characteristics (Typical) DC Cur rent Gain h F E 0 100 200 ) p) 25˚ 12 0 θ j- a ( ˚C/W) 0 (Case 1A –30˚C 1 5 p) I C =7A 5A 3A em I B =1 mA Tem 5 2 eT 2mA ase 4mA (V CE =4V) 10 3 A 20m mA 18 as A (C m 5˚C Collector Current I C (A) 0 15 Collector Current I C (A) 10 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) 90mA 60mA Collector Current I C (A) 120mA C (C I C – V CE Characteristics (Typical) 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 40 20 40 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 10 M aximum Po wer Dissipation P C (W) Collector Curre nt I C (A) Emitter Current I E (A) 148 1 5 0.01 1 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 nk 0.5 150x150x2 10 si 01 at 0.05 he 0 0.01 ite 0.05 20 fin Without Heatsink Natural Cooling In 0.1 ith 1 0.5 30 W Cu t-off Fre quen cy f T (M H Z ) 1ms s 10 C 0m D ms 10 5 30 20 10 Typ 100x100x2 50x50x2 2 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 151. Equivalent circuit 2SD2389 Darlington Silicon NPNTriple Diffused Planar Transistor (Complement to type 2SB1559) sAbsolute maximum ratings Unit VCBO 160 V VCEO 150 VEBO IC Symbol (7 0Ω ) E Application : Audio, Series Regulator and General Purpose sElectrical Characteristics (Ta=25°C) Ratings External Dimensions MT-100(TO3P) (Ta=25°C) Unit µA V IEBO VEB=5V 100max µA V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max 15.6±0.4 9.6 1.8 100max a 4.8±0.2 5.0±0.2 VCB=160V 2.0 ICBO 4.0 Ratings 19.9±0.3 Conditions 5 Symbol C B 2.0±0.1 ø3.2±0.1 b V A PC 80(Tc=25°C) W VBE(sat) IC=6A, IB=6mA 3.0max V Tj 150 °C fT VCE=12V, IE=–1A 80typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF Tstg 2 4.0max 1 VCE(sat) 20.0min IB 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 sTypical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 10 6 10 –5 6 –6 0.6typ 10.0typ C Weight : Approx 2.0g a. Part No. b. Lot No. 0.9typ 0 0 2 4 0 6 0.2 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 0 100 200 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 40000 50000 Typ 10000 5000 Transient Thermal Resistance DC C urrent G ain h FE 125˚C 25˚C 10000 5000 –30˚C 1000 0.5 0 1 5 500 0.2 8 0.5 Collector Current I C (A) e Te (Cas 2 1 5 θ j-a – t Characteristics 4 1 0.5 0.2 8 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) mp) mp) 1 Base-Emittor Voltage V B E (V) (V C E =4V) 1000 02 2 Base Current I B (mA) h FE – I C Characteristics (Typical) e Te I C =4A 1 4 (Cas I B =0.3mA I C =6A –30˚C 2 I C =8A mp) 0.5mA 6 25˚C 4 2 e Te 0.8 mA Cas 1.0m A 6 (V CE =4V) 8 3 ˚C ( 1. 3m A 125 A Collector Current I C (A) 1.5m I C – V BE Temperature Characteristics (Typical) θ j - a ( ˚ C/W) 5m 2. A 0m A 1. V CE ( sat ) – I B Characteristics (Typical) A 8m Collector-Emitter Saturation Voltage V C E (sa t) (V ) Collector Current I C (A) 8 2. 10mA I C – V CE Characteristics (Typical) 1.4 E tf (µs) 60 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 120 80 20 m 10 Typ s 5 40 at si nk Collect or Cur ren t I C (A) he Without Heatsink Natural Cooling ite 0.1 20 fin 0.5 In 40 1 60 ith 60 C W D 80 s 0m 100 M aximum Power Dissipa ti on P C (W) 10 10 Cut- off F req uenc y f T (MH Z ) DC C urrent G ain h FE 5.45±0.1 B 20 0.05 0 –0.02 –0.1 –1 Emitter Current I E (A) –8 0.03 3 Without Heatsink 5 10 50 100 Collector-Emitter Voltage V C E (V) 150 200 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 149
- 152. Equivalent circuit 2SD2390 Darlington Silicon NPNTriple Diffused Planar Transistor (Complement to type 2SB1560) Symbol E External Dimensions MT-100(TO3P) (Ta=25°C) Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA V VCBO 160 V VCEO 150 15.6±0.4 9.6 V V(BR)CEO IC=30mA 150min 10 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max PC 100(Tc=25°C) W VBE(sat) IC=7A, IB=7mA 3.0max 150 °C fT VCE=12V, IE=–2A 55typ MHz –55 to +150 °C 4.8±0.2 2.0±0.1 V Tj pF 95typ VCB=10V, f=1MHz ø3.2±0.1 b 2 4.0max COB a V 20.0min Tstg 4.0 5 IC 19.9±0.3 VEBO 1.8 Ratings Unit 5.0±0.2 Conditions Ratings 2.0 Symbol (7 0Ω ) Application : Audio, Series Regulator and General Purpose sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) C B 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 sTypical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 10 7 10 –5 7 –7 0.5typ 10.0typ C Weight : Approx 2.0g a. Part No. b. Lot No. 1.1typ V CE ( sat ) – I B Characteristics (Typical) 0 0 2 4 2 0 6 0.2 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 0 100 200 (V C E =4V) 70000 50000 10000 5000 10000 25˚C 5000 Transient Thermal Resistance D C Cur r ent Gai n h F E 125˚C Typ –30˚C 1000 5 500 0.2 10 0.5 Collector Current I C (A) mp) mp) e Te 2.5 1 5 10 3 1 0.5 0.1 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 40000 1 1 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 Base Current I B (mA) h FE – I C Characteristics (Typical) 1000 02 4 e Te I C =5A (Cas I C =7A 1 6 –30˚C I B =0.4mA 2 I C =10A p) 0.6mA 4 2 (Cas 0.8mA Tem 6 8 25˚C 1m A se 1.2 mA (Ca Collector Current I C (A) 8 (V C E =4V) 10 3 ˚C 1. 5m A 125 A Collector Current I C (A) 2m I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/W) 10 m A 2. 5m A 10 Collector-Emitter Saturation Voltage V C E (sa t) (V ) I C – V CE Characteristics (Typical) 1.4 E tf (µs) 70 D C Cur r ent Gai n h F E 5.45±0.1 B Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 10 10 100 100 30 50 at si nk Collect or Cur ren t I C (A) he Without Heatsink Natural Cooling 20 ite 0.5 fin 1 In 40 s ith 60 0m W Cut- off F req uency f T (M H Z ) s Ma xim um Powe r Dissipat io n P C (W) m Typ 10 DC 5 0.1 0 –0.02 –0.1 –1 Emitter Current I E (A) 150 –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 153. C Equivalent circuit 2SD2401 Darlington Silicon NPNTriple Diffused Planar Transistor (Complement to type 2SB1570) sAbsolute maximum ratings (Ta=25°C) B (7 0 Ω ) Application : Audio, Series Regulator and General Purpose sElectrical Characteristics External Dimensions MT-200 (Ta=25°C) Ratings Unit VCBO 160 V ICBO VCB=160V 100max µA VCEO 150 V IEBO VEB=5V 100max µA V Symbol Symbol Ratings Conditions Unit V(BR)CEO IC=30mA 150min A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max V IC=7A, IB=7mA 3.0max 9 V 150(Tc=25°C) W VBE(sat) Tj 150 °C fT VCE=12V, IE=–2A 55typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 95typ pF 20.0min PC a b 2 3 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 10 7 10 –5 7 –7 0.5typ 10.0typ C E Weight : Approx 18.4g a. Part No. b. Lot No. tf (µs) 70 1.1typ 0 0 2 4 0 6 0.2 0.5 1 5 10 50 0 (V C E =4V) Typ 10000 5000 125˚C 10000 25˚C 5000 Transient Thermal Resistance DC Cur rent Gain h F E 70000 50000 –30˚C 1000 5 600 0.2 10 12 0.5 Collector Current I C (A) ) mp) emp e Te 2.6 1 5 10 12 2 1 0.5 0.1 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 40000 Cas 1 Base-Emittor Voltage V B E (V) (V C E =4V) 1 0 100 200 Base Current I B (mA) h FE – I C Characteristics (Typical) 0.5 p) 2 Collector-Emitter Voltage V C E (V) 1000 02 4 ˚C ( 2 I C =5A 1 6 –30 I B =0.4mA I C =7A se T 0.6mA 4 I C =10A Tem 0.8mA 8 (Ca 6 2 se 1.0 mA 25˚C 1.2m A 8 10 (Ca 1.5 mA ˚C Collector Current I C (A) A 125 2 .0 m 10 (V C E =4V) 12 Collector Current I C (A) mA I C – V BE Temperature Characteristics (Typical) 3 θ j- a ( ˚C/W) A 10m 2.5 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V CE Characteristics (Typical) 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) 12 0.65 +0.2 -0.1 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 160 30 10 s ite he 80 at si nk Without Heatsink Natural Cooling 20 fin 0.5 In 1 120 ith Maximu m Power Dissipa tion P C (W) 0m W 40 DC s Typ 60 10 5 m Collector Curr ent I C (A) 10 100 Cu t-of f Fr eque ncy f T (MH Z ) DC Cur rent Gain h F E 2.1 2-ø3.2±0.1 7 V 12 24.4±0.2 21.4±0.3 5 IC 6.0±0.2 36.4±0.3 4.0max VEBO Tstg E 40 0.1 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 150 200 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 151
- 154. Equivalent circuit 2SD2438 Darlington Silicon NPNTriple Diffused Planar Transistor (Complement to type 2SB1587) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics Symbol (7 0 Ω ) External Dimensions FM100(TO3PF) (Ta=25°C) Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max VCEO 150 VEBO IC 15.6±0.2 75(Tc=25°C) W VBE(sat) IC=6A, IB=6mA 3.0max V Tj 150 °C fT VCE=12V, IE=–1A 80typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF 3.3 1.75 16.2 Tstg 3.0 A PC 1.6 1 VCE(sat) 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 ( mA) IB2 (mA) ton (µs) tstg (µs) 10 6 10 –2 6 –6 0.6typ 10.0typ 0.9typ 4.4 Weight : Approx 6.5g a. Part No. b. Lot No. I B =0.3mA 0 0 2 4 0 6 0.2 0.5 Collector-Emitter Voltage V C E (V) 1 5 10 50 0 100 200 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 40000 50000 Typ 10000 5000 Transient Thermal Resistance DC C urrent G ain h FE 125˚C 25˚C 10000 5000 –30˚C 1000 0.5 0 1 5 500 0.2 8 0.5 Collector Current I C (A) 2 2.5 1 5 8 θ j-a – t Characteristics 4 1 0.5 0.2 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) ) Temp ) 1 Base-Emittor Voltage V B E (V) (V C E =4V) 1000 02 2 Base Current I B (mA) h FE – I C Characteristics (Typical) Temp I C =4A 1 4 (Case I C =6A (Case 2 I C =8A –30˚C 0.5mA 6 mp) 4 2 e Te 0.8 mA 25˚C 1.0m A 6 (V C E =4V) 8 3 (Cas 1. 3m A E 125˚C A Collector Current I C (A) 1.5m C I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) 5m 2. A 0m A 1. V CE ( sat ) – I B Characteristics (Typical) A 8m Collector-Emitter Saturation Voltage V C E (sa t) (V ) Collector Current I C (A) 8 2. 10mA I C – V CE Characteristics (Typical) B 3.35 1.5 tf (µs) 60 0.65 +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) DC C urrent G ain h FE 3.45 ±0.2 ø3.3±0.2 a b V IB 5.5±0.2 5.5 V 9.5±0.2 160 23.0±0.3 VCBO 0.8±0.2 Ratings Unit Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 120 80 20 10 m Collect or Cur ren t I C (A) Cut- off F req uenc y f T (MH Z ) 152 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 40 nk Emitter Current I E (A) –8 si –1 at –0.1 0.05 3 he 0.1 0 –0.02 ite Without Heatsink Natural Cooling 20 fin 40 1 0.5 60 In 60 s ith 80 0m W DC 5 M aximum Power Dissipa ti on P C (W) 10 100 s 10 Typ E Application : Audio, Series Regulator and General Purpose Conditions Ratings Symbol C B 20 3.5 0 Without Heatsink 0 50 100 Ambient Temperature Ta(˚C) 150
- 155. Equivalent circuit 2SD2439 Silicon NPNTriple Diffused Planar Transistor (Complement to type 2SB1588) Ratings VCBO 160 V VCEO 150 Application : Audio, Series Regulator and General Purpose sElectrical Characteristics Unit External Dimensions FM100(TO3PF) (Ta=25°C) ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA V V A hFE 150min 2.5max V(BR)CEO 10 15.6±0.2 5000min∗ IC=7A, IB=7mA 5 IC IC=30mA VCE=4V, IC=7A VEBO 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 55typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 95typ pF 3.3 1.75 16.2 Tstg 3.0 A PC 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 10 7 10 –5 7 –7 0.5typ 10.0typ 1.1typ 4.4 Weight : Approx 6.5g a. Part No. b. Lot No. 0 0 2 4 2 0 6 0.2 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 0 100 200 h FE – I C Characteristics (Typical) (V C E =4V) 10000 5000 125˚C 10000 25˚C 5000 Transient Thermal Resistance DC Curr ent Gain h F E Typ –30˚C 1000 5 500 0.2 10 0.5 Collector Current I C (A) 2.5 1 5 10 mp) e Te 3 1 0.5 0.1 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 70000 50000 1 1 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 Base Current I B (mA) 40000 1000 02 4 (Cas I C =5A (Cas I C =7A 1 6 –30˚C I B =0.4mA 2 I C =10A p) 0.6mA 4 2 25˚C 0.8mA Tem 6 8 se 1m A (V C E =4V) 10 3 (Ca 1.2 mA E ˚C Collector Current I C (A) 8 C 125 1. 5m A Collector Current I C (A) A 3.35 I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/ W) 2m Collector-Emitter Saturation Voltage V C E (s at) (V ) 10 m A 2. 5m A 10 B V CE ( sat ) – I B Characteristics (Typical) 0.65 +0.2 -0.1 1.5 tf (µs) 70 +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 1.05 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) I C – V CE Characteristics (Typical) 3.45 ±0.2 1.6 1 VCE(sat) 5.5±0.2 ø3.3±0.2 a b V IB Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 30 10 m 10 s s he 40 at si nk Without Heatsink Natural Cooling 20 ite 0.5 fin 1 60 In 40 5 0m ith Typ 60 DC 10 W Collecto r Cur ren t I C (A) 80 Ma xim um Powe r Dissipation P C ( W) 100 Cut- off Fr equ ency f T (MH Z ) DC Curr ent Gain h FE 0.8±0.2 Unit 5.5 Ratings 9.5±0.2 Conditions Symbol 23.0±0.3 Symbol E mp) sAbsolute maximum ratings (Ta=25°C) (7 0 Ω ) e Te Darlington C B 20 0.1 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.05 3 Without Heatsink 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 50 100 150 Ambient Temperature Ta(˚C) 153
- 156. Equivalent circuit 2SD2557 Darlington Silicon NPNTriple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) C B (3.2kΩ)(450Ω) E Application : Series Regulator and General Purpose sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Unit 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V(BR)CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 15.6±0.4 9.6 1500 to 6500 V 1.8 VCB=200V Symbol a 4.8±0.2 5.0±0.2 Ratings ICBO 2.0 Conditions V 4.0 Unit 200 19.9±0.3 Ratings VCBO Symbol 2.0±0.1 ø3.2±0.1 b A VCE(sat) IC=1A, IB=5mA 1.5max V 70(Tc=25°C) W fT VCE=10V, IE=–0.5A 15typ MHz Tj 150 °C COB VCB=10V, f=1MHz 110typ pF –55 to +150 °C Tstg 2 4.0max 2 PC 20.0min IB 3 1.05 +0.2 -0.1 5.45±0.1 0.65 +0.2 -0.1 5.45±0.1 B C 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. V CE (sat) – I C Temperature Characteristics (Typical) Collector to Emitter Saturation Voltage V C E (sat) (V ) 0 0 2 4 6 0 0.2 0.5 1 0 5 0 (V C E =5V) DC Cur rent Gain h FE 8000 5000 ˚C 125 C 25˚ –30 ˚C 100 50 10 5 0.02 0.1 0.5 1 5 5.0 1.0 0.5 0.3 1 5 10 70 ite 40 he at si nk 0.1 fin Without Heatsink Natural Cooling In 0.5 50 ith 1 60 W M aximum Po wer Dissipat io n P C (W) s 5 1m 10 m 50 s 10 m s 0m s 10 Co lle ctor Cu rr ent I C (A) 500 1000 2000 P c – T a Derating 30 30 20 10 Without Heatsink 10 50 100 Collector-Emitter Voltage V C E (V) 154 50 100 Time t(ms) Safe Operating Area (Single Pulse) 0.05 5 2.5 θ j-a – t Characteristics Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 500 p) 1 Collector Current Ic(A) 1000 ase Tem em p) mp) 2 –30˚C (C C 1 Collector-Emitter Voltage V C E (V) h FE – I C Characteristics (Typical) 0˚ eT –3 1 3 e Te A 1 25 ˚C as 0 .3 m A 2 (Cas 0 .6 m 2 A (C 1 .2 m 3 4 25˚C mA 5˚C 2.5 12 Collector Current I C (A) mA (V C E =4V) 5 Collector Current I C (A) 10 4 3 θ j- a (˚C /W) 50 mA Transient Thermal Resistance A C 2 m 50 5˚ I B = 1 .0 A 5 I C – V BE Temperature Characteristics (Typical) (IC/IB=1000) 12 I C – V CE Characteristics (Typical) 300 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 157. Equivalent circuit 2SD2558 Silicon NPNTriple Diffused Planar Transistor (3.2kΩ)(450Ω) E Application : Series Regulator and General Purpose sElectrical Characteristics External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Unit Conditions Ratings VCBO 200 V ICBO VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V(BR)CEO IC 5 A hFE Unit IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 V VCE(sat) IC=1A, IB=5mA 1.5max V W fT VCE=10V, IE=–0.5A 15typ MHz Tj 150 °C COB VCB=10V, f=1MHz 110typ pF °C 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 1.5 4.4 B V BE (sat) – I C Temperature Characteristics (Typical) 1 2 4 6 0 0.5 0.2 1 0 5 0 1 Collector Current I C (A) (V C E =5V) D C Cur r ent Gai n h F E 8000 5000 ˚C 125 C 25˚ 500 –30 ˚C 100 50 10 5 0.02 0.1 0.5 1 5 5.0 1.0 0.5 0.3 1 5 10 50 100 500 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating 60 30 1m s 10 40 In fin ite he at si nk Without Heatsink Natural Cooling ith 1 0.5 W 5 20 0.1 0.05 5 2.5 θ j-a – t Characteristics Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 1000 p) em p) mp) 2 1 Collector-Emitter Voltage V C E (V) h FE – I C Characteristics (Typical) C Ma ximum Po we r Dissipatio n P C (W) 0 Collecto r Cur ren t I C (A) 0 125˚ 1 eT A 2 5 ˚C 3 e Te 0 .3 m – 3 0 ˚C as A 2 (Cas 0 .6 m 2 A (C 1 .2 m 3 4 25˚C mA (V C E =4V) 5˚C 2.5 3.35 Weight : Approx 6.5g a. Part No. b. Lot No. E 12 mA Collector Current I C (A) 10 4 Collector Current I C (A) mA C 0.65 +0.2 -0.1 5 θ j - a (˚C /W) 50 Base to Emitter Saturation Voltage V B E (sat)(V ) A I B = 1 .0 25 1.5 I C – V BE Temperature Characteristics (Typical) (IC/IB=1000) 3 Transient Thermal Resistance I C – V CE Characteristics (Typical) 5 A 0m 0.8 2.15 ase Tem –55 to +150 1.75 –30˚C (C Tstg 3.0 A 60(Tc=25°C) 3.3 2 PC 3.45 ±0.2 ø3.3±0.2 a b 16.2 IB 5.5±0.2 5.5 15.6±0.2 9.5±0.2 Symbol 23.0±0.3 Symbol 0.8±0.2 sAbsolute maximum ratings (Ta=25°C) B 1.6 Darlington C Without Heatsink 10 50 100 Collector-Emitter Voltage V C E (V) 300 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 155
- 158. Equivalent circuit 2SD2560 Darlington Silicon NPNTriple Diffused Planar Transistor (Complement to type 2SB1647) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Unit VCB=150V 100max µA V IEBO VEB=5V 100max µA V 150 V VCEO 150 VEBO 5 V V(BR)CEO IC 15 A hFE IB 1 A PC 130(Tc=25°C) 15.6±0.4 9.6 150min 5000min∗ VCE(sat) IC=10A, IB=10mA 2.5max W VBE(sat) IC=10A, IB=10mA 3.0max 150 °C VCE=12V, IE=–2A 70typ MHz –55to+150 °C COB VCB=10V, f=1MHz 120typ pF 4.0 a ø3.2±0.1 20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 4 10 10 –5 10 –10 0.8typ 4.0typ Weight : Approx 6.0g a. Part No. b. Lot No. 0 2 4 0 0.2 6 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 50000 Typ 10000 5000 1000 12 5˚C Transient Thermal Resistance DC Curr ent Gain h F E 50000 10000 25 5000 –3 ˚C 0˚C 1000 5 10 500 02 15 0.5 f T – I E Characteristics (Typical) 1 5 10 15 0.1 1 10 0m at si nk 156 –5 –10 mp) he –1 e Te ite Without Heatsink Natural Cooling fin 1 0.5 In 5 100 ith s Collecto r Cur ren t I C (A) s DC W Maxim um Power Dissipa tion P C (W) m 10 –0.5 1000 2000 P c – T a Derating 50 0.1 Emitter Current I E (A) 100 Time t(ms) 10 20 mp) 0.5 130 10 40 e Te 1.0 50 60 2.2 3.0 Safe Operating Area (Single Pulse) 80 2 θ j-a – t Characteristics (V C E =12V) 0 –0.02 –0.05 –01 1 Collector Current I C (A) Collector Current I C (A) Cut- off F req uency f T ( MH Z ) 0 Base-Emittor Voltage V B E (V) (V C E =4V) 1 ) 0 100 200 Base Current I B (mA) h FE – I C Characteristics (Typical) 0.5 5 (Cas I C =.5A emp I C =.10A 1 –30˚C I B =0.3mA (Cas 5 I C =.15A 10 eT 0.5mA 2 Cas Collector Current I C (A) 0. 8m A 10 25˚C 1. 0m A ˚C ( mA 125 1.5 Collector Current I C (A) 2m (V CE =4V) 15 3 θ j- a (˚ C/W) 50mA 3mA A I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 10mA 1.4 E 1.2typ I C – V CE Characteristics (Typical) DC Curr ent Gain h F E C tf (µs) 40 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) 500 02 2.0±0.1 b V ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 0 4.8±0.2 V fT Tj 19.9±0.3 IC=30mA VCE=4V, IC=10A 1.8 ICBO VCBO 5.0±0.2 Ratings Symbol Unit 15 E Application : Audio, Series Regulator and General Purpose Conditions Ratings Tstg (7 0Ω ) 2.0 Symbol C B 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 159. Equivalent circuit 2SD2561 Silicon NPNTriple Diffused Planar Transistor (Complement to type 2SB1648) 150 sElectrical Characteristics Symbol Unit V VCBO Ratings Unit VCB=150V 100max µA 24.4±0.2 VEB=5V 100max µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A 70typ MHz COB VCB=10V, f=1MHz 120typ pF 150 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE IB 1 A VCE(sat) PC 200(Tc=25°C) W VBE(sat) Tj 150 °C –55 to +150 °C 2.1 2-ø3.2±0.1 9 a b 2 3 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 4 10 10 –5 10 –10 0.8typ 4.0typ C E Weight : Approx 18.4g a. Part No. b. Lot No. tf (µs) 40 1.2typ 0 0 2 4 0 0.2 6 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 50000 Typ 10000 5000 1000 12 5˚C Transient Thermal Resistance D C Cur r ent Gai n h F E 50000 10000 25 5000 –30 ˚C ˚C 1000 1 5 10 500 02 17 0.5 Collector Current I C (A) 1 5 10 17 0.1 1 10 e Te 100 1000 2000 Time t(ms) P c – T a Derating s fin 120 ite he at si nk Without Heatsink Natural Cooling In 1 0.5 ith 5 160 W Ma ximum Po we r Dissipatio n P C (W) s 0m m DC 10 10 Collector Cur rent I C (A) mp) p) 0.5 200 10 20 mp) 1 50 40 2.6 2 Safe Operating Area (Single Pulse) 60 2 θ j-a – t Characteristics (V C E =12V) 80 e Te 1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut-o ff Fr equ ency f T ( MH Z ) 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 Tem 0 100 200 Base Current I B (mA) h FE – I C Characteristics (Typical) 500 02 5 (Cas I C =.5A –30˚C I B =0.3mA I C =.10A 1 10 (Cas 5 I C =.15A se 0.5mA 2 (Ca 10 25˚C 0. 8m A 15 125 Collector Current I C (A) 1. 0m A (V C E =4V) 17 Collector Current I C (A) 1 .5 m A mA 3 θ j- a ( ˚C/W) A 2 Collector-Emitter Saturation Voltage V C E (s a t) (V ) 15 3m 50mA 17 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) 10mA ˚C I C – V CE Characteristics (Typical) 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) D C Cur r ent Gai n h F E 6.0±0.2 36.4±0.3 IC=30mA VCEO Tstg External Dimensions MT-200 (Ta=25°C) Conditions ICBO E 7 Ratings 21.4±0.3 Symbol 4.0max sAbsolute maximum ratings (Ta=25°C) (7 0 Ω ) Application : Audio, Series Regulator and General Purpose 20.0min Darlington C B 80 40 0.1 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 157
- 160. Equivalent circuit 2SD2562 Silicon NPNTriple Diffused Planar Transistor (Complement to type 2SB1649) Application : Audio, Series Regulator and General Purpose sElectrical Characteristics External Dimensions FM100(TO3PF) (Ta=25°C) ICBO VCB=150V 100max µA V IEBO VEB=5V 100max µA V 5 V 15 A hFE 150min 5000min∗ V(BR)CEO IC IC=30mA VCE=4V, IC=10A VEBO ø3.3±0.2 a b V 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 70typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 120typ pF Tstg 3.0 IC=10A, IB=10mA PC 1.75 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 4 10 10 –5 10 –10 0.8typ 4.0typ 1.2typ 4.4 0 I B =0.3mA 0 2 4 I C =.10A 1 I C =.5A 0 0.2 6 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 50000 Typ 10000 5000 1000 12 5˚C Transient Thermal Resistance DC C urrent G ain h FE 50000 10000 25 5000 –30 ˚C ˚C 1000 1 0 1 5 10 500 02 15 0.5 1 f T – I E Characteristics (Typical) 2.2 5 10 15 θ j-a – t Characteristics 3.0 1.0 0.5 0.1 1 10 100 Collector Current I C (A) Collector Current I C (A) 2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 ) 0 100 200 Base Current I B (mA) h FE – I C Characteristics (Typical) 500 02 5 (Cas 5 I C =.15A 10 emp 0.5mA 2 eT Collector Current I C (A) 0. 8m A 10 25˚C 1. 0m A (V CE =4V) 15 3 Cas 1.5 mA E 125 A Collector Current I C (A) 2m θ j- a (˚C /W ) 50mA 15 3mA C I C – V BE Temperature Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 10mA B 3.35 Weight : Approx 6.5g a. Part No. b. Lot No. ˚C ( I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.5 tf (µs) 40 +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 1.05 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) DC C urrent G ain h FE 1.6 A 2.5max 3.3 1 VCE(sat) 16.2 IB 3.45 ±0.2 mp) 150 5.5±0.2 mp) VCEO 15.6±0.2 e Te V (Cas 150 23.0±0.3 VCBO 0.8±0.2 Unit 5.5 Ratings Symbol Unit 9.5±0.2 Conditions Ratings Symbol E –30˚C sAbsolute maximum ratings (Ta=25°C) (7 0Ω ) e Te Darlington C B 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 100 50 ite he at si nk Without Heatsink Natural Cooling 60 fin 1 0.5 In Ma ximum Po we r Dissipatio n P C ( W) 5 80 ith Collecto r Cur ren t I C ( A) s W Cut-o ff Fr eque ncy f T (MH Z ) s 20 0m m 40 DC 10 10 10 60 40 20 0.1 0 –0.02 –0.05 –01 –0.5 –1 Emitter Current I E (A) 158 –5 –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 161. 2SD2589 Darlington Silicon NPN TripleDiffused Planar Transistor (Complement to type 2SB1659) sAbsolute maximum ratings (Ta=25°C) Application : Audio, Series Regulator and General Purpose sElectrical Characteristics External Dimensions FM-25(TO220) (Ta=25°C) Unit 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–0.5A 60typ MHz –55 to +150 °C COB VCB=10V, f=1MHz VCEO 110 VEBO IC Tstg 10.2±0.2 V 12.0min V pF 55typ 2.0±0.1 ø3.75±0.2 a b 1.35 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 2.5 sTypical Switching Characteristics (Common Emitter) 2.5 1.4 B C E VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 30 6 5 10 –5 5 –5 0.8typ 6.2typ Weight : Approx 2.6g a. Part No. b. Lot No. tf (µs) 1.1typ I C – V CE Characteristics (Typical) 4.8±0.2 3.0±0.2 VCB=110V 110 16.0±0.7 ICBO VCBO 8.8±0.2 Ratings Symbol Unit 4.0max Conditions Ratings Symbol I C – V BE Temperature Characteristics (Typical) I B =0.1mA 0 0 2 4 I C =3A 0 6 0.1 0.5 1 5 10 50 h FE – I C Characteristics (Typical) (VCE=4V) 10000 5000 1000 500 1 5 6 Collector Current I C (A) 10000 12 5000 Transient Thermal Resistance DC Curr ent Gain h F E Typ 5˚C 25 ˚C –3 0˚C 1000 500 100 0.02 0.1 0.5 ) Temp ) mp) 2 2.5 1 56 5 1 0.5 0.4 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) 100 1000 2000 Time t(ms) P c – T a Derating Safe Operating Area (Single Pulse) (VCE=12V) 50 80 60 at si nk Emitter Current I E (A) –6 he –1 30 ite –0.1 fin 0 –0.02 In 20 ith 40 40 W M aximu m Power Dissipa tion P C ( W) Typ Cut -off Fre quen cy f T (MH Z ) DC C urrent G ain h FE 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 40000 0.5 0 Base-Emittor Voltage V B E (V) (VCE=4V) 40000 0.1 0 100 Base Current I B (mA) Collector-Emitter Voltage V C E (V) 200 0.02 2 (Case 1 –30˚C 2 I C =5A 4 Temp 0.2mA 2 e Te 4 (Case Collector Current I C (A) 0.3 mA (VCE=4V) 6 3 25˚C 0. 4m A (Cas A 125˚C 5m Collector Current I C (A) 0. θ j - a ( ˚C/W) 5mA 6 Collector-Emitter Saturation Voltage V C E (s at) (V) 1m A V CE ( sa t ) – I B Characteristics (Typical) 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 159
- 162. Equivalent circuit 2SD2641 Darlington Silicon NPNTriple Diffused Planar Transistor (Complement to type 2SB1685) sAbsolute maximum ratings (Ta=25°C) Unit 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 60typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF Tstg 15.6±0.4 9.6 1.8 VCB=110V a 4.8±0.2 5.0±0.2 ICBO 4.0 V 2.0 Ratings Symbol 19.9±0.3 110 E External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Symbol 2.0±0.1 ø3.2±0.1 b V 2 4.0max VCBO sElectrical Characteristics Unit (7 0 Ω ) Application : Audio, Series Regulator and General Purpose 20.0min Ratings C B 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 sTypical Switching Characteristics (Common Emitter) 5.45±0.1 B VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 6 5 10 –5 5 –5 0.8typ 6.2typ 1.1typ Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) I B =0.1mA 0 2 0 4 I C =3A 0 6 0.1 0.5 Collector-Emitter Voltage V C E (V) 1 5 10 50 h FE – I C Temperature Characteristics (Typical) (V C E =4V) Typ 1000 500 0.5 1 125˚C Transient Thermal Resistance DC C urrent G ain h FE 50000 5000 10000 25˚C 5000 –30˚C 1000 500 100 0.01 56 0.1 Collector Current I C (A) p) em eT as (C ) Temp 1 0.5 2 2.5 1 θ j-a – t Characteristics 5 1 0.5 1 56 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 60 20 Typ Collector Curre nt I C (A) nk 160 –6 si –1 Emitter Current I E (A) at –0.1 he 0 –0.02 ite 0.1 fin Without Heatsink Natural Cooling 40 In 0.5 ith s 1 W 0m s 20 C 10 40 D m 5 60 Maximu m Power Dissipa tion P C (W) 10 10 Cut-o ff F requ ency f T (MH Z ) DC Curr ent Gain h F E 50000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 100 0.01 0 100 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 2 (Case 1 –30˚C 2 I C =5A 4 ) 0.2mA 2 Temp 4 5˚C Collector Current I C (A) 0.3 mA (V CE =4V) 6 3 12 0. 4m A (Case A 25˚C 5m Collector Current I C (A) 0. θ j - a (˚C /W) 5mA 6 Collector-Emitter Saturation Voltage V C E (s a t) (V ) 1m A I C – V CE Characteristics (Typical) 1.4 E tf (µs) 30 C 20 Without Heatsink 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
- 163. Equivalent circuit 2SD2642 sElectrical Characteristics VCEO 110 V VEBO 5 V .(BR)CEO V IC 6 A ICBO 100max µA 100max µA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max IEBO 16.9±0.3 VEB=5V IC=30mA 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–0.5A 60typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF 13.0min Tstg 3.9 1 VCE(sat) ø3.3±0.2 a b V IB 1.35±0.15 1.35±0.15 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) 2.4±0.2 2.2±0.2 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 30 6 5 10 –5 5 –5 0.8typ 6.2typ Weight : Approx 2.0g a. Part No. b. Lot No. 1.1typ B C E V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) I B =0.1mA 0 0 2 4 I C =3A 0 6 0.5 0.1 Collector-Emitter Voltage V C E (V) 1 5 10 50 h FE – I C Temperature Characteristics (Typical) (V C E =4V) Typ 1000 500 0.5 1 125˚C Transient Thermal Resistance DC C urrent G ain h FE 50000 5000 10000 25˚C 5000 –30˚C 1000 500 100 0.01 56 0.1 Collector Current I C (A) p) em eT as (C ) ) Temp 1 0.5 2 2.5 1 θ j-a – t Characteristics 4 1 0.5 0.3 56 1 5 10 50 100 500 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 30 80 10 he at si nk Without Heatsink Natural Cooling ite 1 0.5 20 fin 20 DC 10 m s 0m s In 40 10 5 ith Collector Cur rent I C (A) 60 W Maximu m Power Dissipa tion P C (W) Typ Cu t-of f Fr eque ncy f T (MH Z ) DC Curr ent Gain h FE 50000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 100 0.01 0 100 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 2 (Case 1 –30˚C 2 I C =5A 4 Temp 0.2mA 2 5˚C 4 12 Collector Current I C (A) 0.3 mA (V CE =4V) 6 3 (Case 0. 4m A 25˚C mA Collector Current I C (A) 5 0. θ j - a (˚C /W) 5mA 6 Collector-Emitter Saturation Voltage V C E (s a t) (V ) 1m A I C – V CE Characteristics (Typical) 4.2±0.2 2.8 c0.5 4.0±0.2 V 0.8±0.2 110 Unit ±0.2 VCBO Ratings VCB=110V Unit External Dimensions FM20(TO220F) (Ta=25°C) Conditions Symbol Ratings Symbol E Application : Audio, Series Regulator and General Purpose Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) sAbsolute maximum ratings (Ta=25°C) (7 0 Ω ) 8.4±0.2 Darlington C B 10 0.1 Without Heatsink 2 0 –0.02 –0.1 –1 Emitter Current I E (A) –6 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 161
- 164. C Equivalent circuit 2SD2643 Silicon NPNTriple Diffused Planar Transistor (Complement to type 2SB1687) Application : Audio, Series Regulator and General Purpose VCBO 110 V ICBO VCEO 110 V IEBO VEBO 5 V V(BR)CEO IC 6 Symbol (Ta=25°C) Conditions Ratings VCB=110V 100max External Dimensions FM100(TO3PF) Unit µA VEB=5V 100max µA IC=30mA 110min V A hFE VCE=4V, IC=5A 15.6±0.2 5000min∗ A VCE(sat) IC=5A, IB=5mA 2.5max 60(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–0.5A 60typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 6 5 10 –5 5 –5 0.8typ 6.2typ 3.3 5.45±0.1 1.1typ 4.4 B V CE ( sat ) – I B Characteristics (Typical) 3.35 1.5 C Weight : Approx 6.5g a. Part No. b. Lot No. E I C – V BE Temperature Characteristics (Typical) I B =0.1mA 0 0 2 4 1 I C =3A 0 6 0.1 0.5 Collector-Emitter Voltage V C E (V) 1 5 10 50 (V C E =4V) Typ 5000 1000 500 1 125˚C Transient Thermal Resistance DC Curr ent Gain h FE D C Cur r ent Gai n h F E 50000 0.5 p) em eT as (C 10000 25˚C 5000 –30˚C 1000 500 100 0.01 56 ) Temp 1 0.1 Collector Current I C (A) 0.5 2.5 1 5 1 0.5 1 56 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 50000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 100 0.01 0 100 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 2 (Case I C =5A 4 –30˚C 2 2 ) 0.2mA Temp 4 5˚C Collector Current I C (A) 0.3 mA (V CE =4V) 6 3 12 0. 4m A (Case A 25˚C 5m Collector Current I C (A) 0. θ j - a (˚C /W) 5mA 6 Collector-Emitter Saturation Voltage V C E (sa t) (V ) 1m A I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 1.5 tf (µs) 30 0.8 2.15 1.05 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) 1.75 16.2 Tstg 3.0 1 PC 3.45 ±0.2 ø3.3±0.2 a b V IB 5.5±0.2 5.5 Unit 0.8±0.2 sElectrical Characteristics Ratings 23.0±0.3 Symbol E 1.6 sAbsolute maximum ratings (Ta=25°C) (7 0Ω ) 9.5±0.2 Darlington B Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 si nk Collector Curr ent I C (A) at 162 –6 he –1 Emitter Current I E (A) ite –0.1 fin 0.1 0 –0.02 40 In Without Heatsink Natural Cooling ith s 1 0.5 W 0m s 20 C 10 40 D m 5 60 Maxim um Power Dissip ation P C (W) 10 10 Cut- off F req uenc y f T (M H Z ) 60 20 Typ 20 Without Heatsink 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150
- 165. Equivalent circuit SAH02 2 1 Silicon PNPEpitaxial Planar Transistor with Shottky Barrier Diode sAbsolute maximum ratings (Ta=25°C) Symbol 4 3 Application : Chopper Regulator sElectrical Characteristics External Dimensions PS Pack (Ta=25°C) Conditions Ratings Unit VCB=–30V –10max µA IEBO VEB=–10V –10max µA V(BR)CEO IC=–10mA –30min V –30 V VEBO –10 V IC –3 A hFE1 VCE=–2V, IC=–1A 100min IB –0.5 A hFE2 VCE=–2V, IC=–0.5A 150min PC 800(Ta=25°C) mW VCE(sat) IC=–0.5A, IB=–20mA –0.3max V 1.4±0.2 VCE=–12V, IE=0.3A 100typ –40 to +125 °C COB VCB=–10V, f=1MHz 45typ IF=0.5A trr IF=±100mA 0~0.1 V V 1.0±0.3 Weight : Approx 0.23g a. Part No. b. Lot No. 3.0±0.2 9.8±0.3 I C – V CE Characteristics (Typical) –100mA 30 min 0.55 max 4.0max 6.3±0.2 pF IR=100µA 3.6±0.2 6.8max 0.3 +0.15 -0.05 fT VR 1 0.25 °C VF b 8.0±0.5 125 –3 a 4 MHz Tj Tstg 2 3 4.32±0.2 VCEO Symbol 4.8max ICBO 2.54±0.25 V 0.89±0.15 Unit –30 0.75 +0.15 -0.05 Ratings VCBO 15 typ ns Di ode I F – V F Characteristics –20mA I C – V BE Temperature Characteristics (Typical) 3 (V C E =–2V) –3 –1 0 –2 –3 –4 –5 0 –6 0 0.5 Collector-Emitter Voltage V C E (V) 0.8 t stg t on tf 0.2 0 –0.1 –0.5 –1 –3 125˚C 500 25˚C –30˚C 100 –0.01 –0.05 –0.1 –0.5 (I C =–0.5A) (Case Temp ) mp) –30˚C –1.5 –1 –3 100 10 1 0.3 0.001 0.01 0.1 1 10 100 1000 Time t(ms) Safe Operating Area (Single Pulse) V CE (sat) – I B Temperature Characteristics (Typical) –1.0 300 Collector Current I C (A) Collector Current I C (A) –1.5 Transient Thermal Resistance DC Curr ent Gain h FE V C C 12V –I B 1 =I B2 =30mA 0.4 –0.5 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 1000 1.0 0.6 0 Base-Emittor Voltage V B E (V) (V C E =–2V) P c – T a Derating 1.0 –5 25˚C –1.0 125˚C –0.5 10 –1 –5 –10 –50 Base Current I B (mA) –100 –300 s s –0.5 –0.1 –0.05 0 –1 m Ma xim um Powe r Dissipat io n P C (W) 100µs 1m –30˚C Collector Curr ent I C (A) t on • t st g• t f ( µ s) ) 0 1.0 Forward Voltage V F (V) t on •t stg •t f – I C Characteristics (Typical) Swit ching Time emp ˚C ( 125 C ˚C 0˚ 25 C θ j- a (˚C /W) 0 5˚ –3 12 Collecto r-Emitte r Satu ration Voltage V C E( s a t ) ( V) –1 Cas 1 eT I B =–3mA –1 –2 e Te –5m A 2 (Cas –5m A 25˚C –2 Collector Current I C (A) –1 0m A Forward Current I F (A) Collector Current I C (A) –15mA –0.03 –3 Without Heatsink Natural Cooling –5 –10 Collector-Emitter Voltage V C E (V) –50 0.5 Glass epoxy substrate (95 x 69 x 1.2mm) Natural Cooling 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 163
- 166. Equivalent circuit 2 (4kΩ) SAH03 Silicon PNP EpitaxialPlanar Transistor with Fast-Recovery Rectifier Diode Symbol (100Ω) 1 External Dimensions PS Pack (Ta=25°C) Ratings Unit VCBO –60 V ICBO VCEO –60 V IEBO VEBO –6 V V(BR)CEO IC –1.2 A hFE VCE=–4V, IC=–1A IB –0.1 A VCE(sat) IC=–1A, IB=–2mA –1.4max V PC 1.0(Ta=25°C) W fT VCE=–12V, IE=0.1A 100typ MHz 8.0±0.5 Tj 150 °C COB VCB=–10V, f=1MHz 30typ pF 6.3±0.2 –40to+150 °C VR IR=100µA 100 min V VF IF=0.5A 1.5 max V trr IF=±100mA 100 typ ns Unit –3max mA 4 a b 1 0.89±0.15 V –60min 2000 to 12000 1.4±0.2 0.75 +0.15 -0.05 VEB=–6V IC=–10mA 2 3 4.32±0.2 µA 4.8max –10max 2.54±0.25 Ratings VCB=–60V 3.6±0.2 6.8max 4.0max 0.3 +0.15 -0.05 Tstg Conditions 0.25 Symbol 0~0.1 1.0±0.3 Weight : Approx 0.23g a. Part No. b. Lot No. 3.0±0.2 9.8±0.3 I C – V CE Characteristics (Typical) –1 –2 –3 –4 –5 0 tf 12 1000 0.5 t on Transient Thermal Resistance 5000 DC Cur rent Gain h F E 5˚C ˚C 25 500 0 –3 ˚C 100 –1 50 –0.02 –2.4 V CE (sat) – I B Temperature Characteristics (Typical) –0.1 –0.5 –1 –2.4 mp) e Te 1 0.3 0.001 0.01 0.1 1 10 100 1000 Time t(ms) P c – T a Derating 1.5 –3 10 125˚C mp) 10 Safe Operating Area (Single Pulse) (I C =–0.5A) 0µ Collector Curre nt I C ( A) s –1 s –30˚C ms 25˚C –2 1m 10 Collecto r-Emitte r Satu ration Vo lt age V C E( s a t ) ( V) –0.05 –3 100 Collector Current I C (A) Collector Current I C (A) –2 300 Maximu m Power Dissipa tion P C (W) t on• t st g• t f (µ s) V C C 30V –I B 1 =I B 2 =2mA 1 –3 –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 10000 2 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 0.1 –0.2 0 1.6 Forward Voltage V F (V) t on •t stg •t f – I C Characteristics (Typical) t stg ) 125 1 (Cas ˚C ( Cas 0.01 –6 Collector-Emitter Voltage V C E (V) θ j- a ( ˚C/W) 0 –1 0˚ C 2 5 ˚C ˚C 125 0 –1 emp 0.05 I B =–0.3m A eT 0.1 e Te –0 .4m A –1 –30˚C A (Cas – 0 .5 m –2 25˚C Forward Current I F (A) A (V CE =–4V) –2.4 0.5 –0 .8 m A – 0 .6 m I C – V BE Temperature Characteristics (Typical) 1.2 1 –1 .0 m A –2 Collector Current I C (A) Di od e I F – V F Characteristics –1.2mA Collector Current I C (A) –5.0mA –10.0mA –2.0mA –2.4 Switching T im e 3 Application : Voltage change switch for motor sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) 4 –1 –0.5 Without Heatsink Natural Cooling –0.1 0 –0.1 –0.5 –1 Base Current I B (mA) 164 –5 –0.05 –1 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 1.0 0.5 Glass epoxy substrate (95 x 69 x 1.2mm) Natural Cooling 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150
- 167. Equivalent circuit SAP09N B D Application: Audio IC 10 A IB 1 A µA 150 °C VCE =4V,IC =6A 5000 IC =6A, IB =6mA 2.0 V VBE (sat) °C 150 VCE (sat) W –40 to +150 Tstg 100 VEB = 5V IC =30mA hFE V mA Tj µA VCEO 10 Di IF 100 IEBO 80 ( Tc = 25°C) PC Unit max IC =6A, IB =6mA 2.5 V (36°) V 20000 a b VCE =20V, IC =40mA 1220 705 mV Di VF IE =1A RE IC – VCE Characteristics (Typical) +0.2 0.176 0.22 2.54±0.1 3.81±0.1 Ω 0.264 2.54±0.1 (12.7) 1.0m A 1.8mA 0.8m Collector Current IC (A) 0.5mA 6 0.3mA 4 IB = 0.2mA 2 0 2 4 2 IC =8A 6A 4A 1 0 0.3 0.5 1 j-a (°C/W) Transient Thermal Resistance 25°C –30°C 1000 500 200 0.03 0.1 0.5 1 5 4 125°C 25°C 10 50 100 0 – 30°C 0 1 2 3 Base-Emitter Voltage VBE (V) Characteristics 3 1 0.5 0.1 1 10 5 10 Collector Current IC (A) 50 100 500 1000 2000 Time t (ms) Safe Operating Area (Single Pulse) PC – Ta Derating 30 10 m 0m s s 10 5 D. C ite fin at he 40 k sin Without Heatsink Natural Cooling In 0.5 ith 1 60 W Maximum Power Dissipation Pc (W) 80 10 Collector Current IC (A) DC Current Gain hFE j-a – t 125°C 5000 5 Base Current IB (mA) hFE – IC Characteristics (Typical) 10000 6 2 Collector-Emitter Voltage VCE (V) (VCE = 4V) (VCE =4V) 8 6 50000 S E 10 Collector Current IC (A) A 1.3mA C Weight: Approx 8.3g a. Part No. b. Lot No. IC – VBE Temperature Characteristics 3 Collector-Emitter Saturation Voltage VCE(sat) (V) mA 1.5 +0.2 0.65 –0.1 3.81±0.1 (7.62) 17.8±0.3 4±0.1 VCE(sat) – IB Characteristics (Typical) 8 0 1±0.1 +0.2 0.8 –0.1 mV IF =2.5mA VBE 0.65 –0.1 B D 10mA 2.5mA 2.0mA 4.5±0.2 1.6±0.2 +0.2 1.35 –0.1 VhFE Rank O (5000 to 12000), Y (8000 to 20000) 10 3.2±0.2 15.4±0.3 9.9±0.2 2±0.1 V typ (41) V 5 min VCB =150V 5±0.2 150 Conditions ICBO (18) VCEO VEBO Symbol (Unit: mm) 7±0.2 22±0.3 23±0.3 28±0.3 V External Dimensions 3.3±0.2 150 ( Ta = 25°C ) Ratings (2.5) VCBO sElectrical Characteristics Unit 3.4max sAbsolute maximum ratings (Ta=25°C) Ratings S Emitter resistor RE: 0.22Ω Typ. R: 70Ω Typ. E (Complement to type SAP09P) Symbol C 20 0.1 0.05 3 5 10 50 100 Collector-Emitter Voltage VCE (V) 200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta (°C) 165
- 168. Equivalent circuit SAP09P B C Application: Audio V IC –10 A IB –1 A PC 80 (Tc=25°C) W 10 mA 150 °C –40 to +150 °C Tj Tstg typ Unit max –100 µA –100 µA IEBO VEB = – 5V VCEO IC = – 30mA –150 hFE V VCE = – 4V, IC = – 6A 5000 VCE (sat) IC = – 6A, IB = – 6mA –2.0 V VBE (sat) IC = – 6A, IB = – 6mA –2.5 V (36°) V 20000 a b VCE = – 20V, IC = – 40mA 1230 mV IF = 2.5mA VBE 1580 mV Di VF IE =1A RE 0.176 0.22 IC – VCE Characteristics (Typical) 2.54±0.1 –0.8mA –10m –1.5mA –1.8mA –0.5mA –6 –0.3mA –4 IB = –0.2mA –2 0 –2 0 –2 IC = –8A –6A –4A –1 j-a (°C/W) Transient Thermal Resistance DC Current Gain hFE –30°C 5000 1000 500 200 –0.03 –0.1 –0.5 –1 –5 0 –0.3 –1 –5 –50 –100 1 0.5 0.1 1 5 10 50 100 500 1000 2000 Time t (ms) PC – Ta Derating Safe Operating Area (Single Pulse) 80 10 D. –5 s at 40 k in Without Heatsink Natural Cooling he –0.5 ite –1 60 fin In C ith 10 m s 0m s –10 W Maximum Power Dissipation Pc (W) –30 20 –0.1 –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage VCE (V) 166 –200 3.5 0 –6 –4 125°C 25°C Without Heatsink 0 25 50 75 100 0 0 –1 –2 Base-Emitter Voltage VBE (V) Characteristics Collector Current IC (A) Collector Current IC (A) –10 3 –10 (VCE = –4V) –30°C j-a – t 25°C 10000 IC – VBE Temperature Characteristics (Typical) –2 Base Current IB (mA) 125°C D B –8 hFE – IC Characteristics (Typical) 50000 C –10 Collector-Emitter Voltage VCE (V) (VCE = –4V ) Weight: Approx 8.3g a. Part No. b. Lot No. 4±0.1 –3 –6 –4 +0.2 0.65 –0.1 3.81±0.1 (12.7) Collector Current IC (A) –1.0mA (18) 2.54±0.1 (7.62) 17.8±0.3 VCE(sat) – IB Characteristics (Typical) Collector-Emitter Saturation Voltage VCE(sat) (V) mA 3 –1. A Collector Current IC (A) –8 1±0.1 +0.2 0.8 –0.1 3.81±0.1 Ω 0.264 +0.2 0.65 –0.1 E S –2.0mA –2.5mA 4.5±0.2 1.6±0.2 +0.2 1.35 –0.1 VhFE Rank O (5000 to 12000), Y (8000 to 20000) –10 φ 3.2±0.2 15.4±0.3 9.9 ±0.2 (2.5) Di IF min 2±0.1 V –5 VCE = –150V (41) –150 VEBO Conditions ICBO 5±0.2 VCEO Symbol (Unit: mm) 28±0.3 V 7±0.2 150 External Dimensions 23±0.3 VCBO ( Ta = 25°C ) Ratings 3.3±0.2 Unit 3.4max Ratings 22±0.3 sElectrical Characteristics (Ta=25°C) Symbol Emitter resistor RE: 0.22Ω Typ. S R: 70Ω Typ. (Complement to type SAP09N) sAbsolute maximum ratings E D 125 Ambient Temperature Ta (°C) 150 –3
- 169. Equivalent circuit SAP10N B D Application: Audio 12 A IC IB 1 10 mA Di IF 150 Tstg IC=7A, IB =7mA VBE (sat) °C 2.0 V 2.5 IC =7A, IB =7mA mV IF =2.5mA 705 mV Di VF IE = 1A RE 0.176 0.22 a b +0.2 0.65 –0.1 2.54±0.1 (7.62) (12.7) 1.0mA Collector Current IC (A) 0.8mA 8 0.6mA 0.4mA 4 IB =0.2mA 0 0 2 2 IC =10A 7A 1 5A 0 0.4 1 5 j-a – t j-a (°C/W) Transient Thermal Resistance 25°C –30°C 5000 1000 0.3 0.5 1 5 6 125°C 4 25°C 50 100 200 0 – 30°C 0 1 2 2.5 Base-Emitter Voltage VBE (V) Characteristics 3 1 0.5 0.1 1 10 12 5 10 Collector Current IC (A) 50 100 500 1000 2000 Time t (ms) PC – Ta Derating Safe Operating Area (Single Pulse) 100 10 10 m 10 s 0m s C ite k sin at he Without Heatsink Natural Cooling 60 fin 0.5 In 1 80 ith W D. 5 Maximum Power Dissipation Pc (W) 30 Collector Current IC (A) DC Current Gain hFE 125°C 10000 10 Base Current IB (mA) hFE – IC Characteristics (Typical) 40000 8 2 Collector-Emitter Voltage VCE (V) (VCE =4V) (VCE =4V) 10 6 4 S E 12 Collector Current IC (A) A A 1.2m A m 1.5 C Weight: Approx 8.3g a. Part No. b. Lot No. IC – VBE Temperature Characteristics (Typical) VCE(sat) – IB Characteristics (Typical) 3 Collector-Emitter Saturation Voltage VCE(sat) (V) 2.5mA 2.0m 10mA +0.2 0.65 –0.1 3.81±0.1 17.8±0.3 4±0.1 B D 12 1±0.1 +0.2 2.54±0.1 3.81±0.1 VhFE Rank O (5000 to 12000), Y (8000 to 20000) IC – VCE Characteristics (Typical) 4.5±0.2 1.6±0.2 0.8 –0.1 Ω 0.264 φ 3.2±0.2 +0.2 1.35 –0.1 V 1200 15.4±0.3 9.9±0.2 (36°) V 20000 VCE =20V, IC =40mA VBE °C –40 to +150 Tj 5000 VCE (sat) A VCE = 4V, IC =7A µA 150 hFE V W VEB =5V IC = 30mA µA 100 IEBO VCEO 100( Tc=25°C) PC 100 VCB =150V ICBO Unit max 2±0.1 V typ (41) V 5 min 5±0.2 150 Conditions (18) VCEO VEBO Symbol (Unit: mm) 7±0.2 22±0.3 ±0.3 23 28±0.3 V External Dimensions 3.3±0.2 150 ( Ta = 25°C ) Ratings 3.4max VCBO sElectrical Characteristics Unit (2.5) sAbsolute maximum ratings (Ta=25°C) Ratings S Emitter resistor RE: 0.22Ω Typ. R: 70Ω Typ. E (Complement to type SAP10P) Symbol C 40 20 0.1 0.05 3 5 10 50 100 Collector-Emitter Voltage VCE (V) 200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta (°C) 167
- 170. Equivalent circuit SAP10P S B C Application: Audio V –5 V IC –12 A IB –1 A Unit max –100 µA –100 µA 150 °C VCE =–4V,IC = –7A 5000 IC =–7A, IB =–7mA –2.0 V VBE (sat) °C –40 to +150 –150 VCE (sat) W IC =–30mA hFE V mA VEB = –5V VCEO 10 Tstg typ IEBO 100 ( Tc = 25°C) Tj min IC =–7A, IB =–7mA –2.5 15.4±0.3 9.9±0.2 V (36°) V 20000 a b VCE = – 20V, IC = – 40mA 1210 mV IF =2.5mA VBE 1540 mV Di VF IE = 1A RE 0.176 0.22 IC – VCE Characteristics (Typical) –1.0mA Collector Current IC (A) –8 –0.6mA –0.4mA –4 IB =–0.2mA 0 –4 –2 –2 IC =–10A –7A –1 –5A 0 –0.4 –1 j-a (°C/W) Transient Thermal Resistance DC Current Gain hFE j-a – t 25°C 5000 – 30°C 1000 –0.3 –0.5 –1 –5 –5 –50 –100 –200 1 0.5 0.1 1 5 10 50 100 500 1000 2000 Time t (ms) Safe Operating Area (Single Pulse) PC – Ta Derating 100 –10 10 m 10 s 0m s C 60 ite in k in s at he Without Heatsink Natural Cooling f In –0.5 ith –1 80 W D. –5 Maximum Power Dissipation Pc (W) –30 40 20 –0.1 –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage VCE (V) 168 –200 3.5 0 –6 125°C –4 25°C –30°C Without Heatsink 0 25 50 75 100 0 0 –1 –2 Base-Emitter Voltage VBE (V) Characteristics Collector Current IC (A) Collector Current IC (A) –10 3 –10 –12 –8 –2 hFE – IC Characteristics (Typical) 10000 (VCE =– 4V) –12 Base Current IB (mA) 125°C D B –10 –6 40000 C Weight: Approx 8.3g a. Part No. b. Lot No. IC – VBE Temperature Characteristics (Typical) –3 Collector-Emitter Voltage VCE (V) (VCE = –4V) +0.2 0.65 –0.1 3.81±0.1 (12.7) Collector Current IC (A) Collector-Emitter Saturation Voltage VCE(sat) (V) A m .0 –2 A –1.2m A 5m –1. (18) 2.54±0.1 (7.62) 17.8±0.3 4±0.1 VCE(sat) – IB Characteristics (Typical) –0.8mA 0 1±0.1 +0.2 0.8 –0.1 2.54±0.1 3.81±0.1 Ω 0.264 +0.2 0.65 –0.1 E S –10mA –2.5mA 4.5±0.2 1.6±0.2 +0.2 VhFE Rank O (5000 to 12000), Y (8000 to 20000) –12 φ 3.2±0.2 1.35 –0.1 (2.5) PC Di IF VCB =–150V 2±0.1 –150 Conditions ICBO (41) VCEO VEBO Symbol (Unit: mm) 5±0.2 V External Dimensions 7±0.2 22±0.3 ±0.3 23 28±0.3 –150 ( Ta = 25°C ) Ratings 3.3±0.2 VCBO sElectrical Characteristics Unit 3.4max sAbsolute maximum ratings (Ta=25°C) Ratings Emitter resistor RE: 0.22Ω Typ. R: 70Ω Typ. (Complement to type SAP10N) Symbol E D 125 Ambient Temperature Ta (°C) 150 –2.5
- 171. Equivalent circuit SAP16N D E IC 15 A IB 1 A µA 150 °C °C VCE = 4V,IC = 10A 5000 IC = 10A, IB = 10mA 2.0 V VBE (sat) W 160 VCE (sat) –40 to +150 Tstg 100 VEB = 5V IC = 30mA hFE V mA Tj µA VCEO 10 IC = 10A, IB = 10mA 2.5 V φ 3.2±0.2 15.4±0.3 9.9±0.2 (36°) V 20000 a b 4.5±0.2 1.6±0.2 VCE = 20V, IC = 40mA 1190 mV IF = 2.5mA VBE 705 mV Di VF 0.176 0.22 0.264 100 110 (18) +0.2 0.65 –0.1 +0.2 0.8 –0.1 2.54±0.1 2.54±0.1 3.81±0.1 Ω 90 IE = 1A RE +0.2 0.65 –0.1 3.81±0.1 (7.62) Ω REB (12.7) 17.8±0.3 4±0.1 Weight: Approx 8.3g a. Part No. b. Lot No. VhFE Rank O (5000 to 12000), Y (8000 to 20000) B D IC – VCE Characteristics (Typical) 2. 5.0mA 1.2mA Collector Current IC (A) 3.0mA 1.0mA 0.8mA 10 0.5mA 5 IB =0.3mA 0 0 2 4 2 IC =15A 10A 1 5A 0 0.4 6 –30°C 1000 0.3 0.5 1 5 1 5 10 50 100 0 200 10 2 2.5 0.1 1 15 5 10 50 100 500 1000 2000 Time t (ms) PC – Ta Derating Di IF – VF Characteristics (Typical) 150 10 m s C 5 k in ts a he Without Heatsink Natural Cooling 100 ite fin 1 0.5 5 In Forward Current IF (mA) s ith W Maximum Power Dissipation Pc (W) 10 D. 1 Base-Emitter Voltage VBE (V) 0.5 40 0m 0 1 Safe Operating Area (Single Pulse) 10 25°C Characteristics Collector Current IC (A) 10 125°C 5 3 j-a (°C/W) Transient Thermal Resistance 25°C 5000 Collector Current IC (A) DC Current Gain hFE j-a – t 125°C 10000 10 Base Current IB (mA) hFE – IC Characteristics (Typical) 40000 (VCE =4V) –30°C Collector-Emitter Voltage VCE (V) (VCE =4V) S E 15 3 Collector Current IC (A) A 1.5m A 0m C IC – VBE Temperature Characteristics (Typical) VCE(sat) – IB Characteristics (Typical) Collector-Emitter Saturation Voltage VCE(sat) (V) 15 50mA 1±0.1 +0.2 1.35 –0.1 (2.5) Di IF 100 IEBO 150( Tc = 25°C) PC Unit max 2±0.1 V typ (41) V 5 min VCB =160V 5±0.2 160 Conditions ICBO (Unit: mm) 7±0.2 22±0.3 ±0.3 23 28±0.3 VCEO VEBO Symbol External Dimensions 3.3±0.2 V ( Ta = 25°C ) Ratings 3.4max 160 sElectrical Characteristics Unit VCBO S Emitter resistor RE: 0.22Ω Typ. Application: Audio sAbsolute maximum ratings (Ta=25°C) Ratings R: 100Ω Typ. B (Complement to type SAP16P) Symbol C 50 0.1 0.05 3 5 10 50 100 Collector-Emitter Voltage VCE (V) 200 1 0 0.5 1.0 1.5 Forward Voltage VF ( V ) 2.0 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta (°C) 169
- 172. Equivalent circuit C Application: Audio V –5 V IC –15 A IB –1 A max Unit 5000 µA –160 VCE =– 4V, IC=–10A µA –100 VEB = – 5V IC = – 30mA hFE V 20000 –2.0 V VBE (sat) W IC = – 10A, IB =–10mA IC = – 10A, IB = – 10mA –2.5 φ 3.2±0.2 15.4±0.3 9.9±0.2 (36°) V VCE (sat) mA V 4.5±0.2 1.6±0.2 a b 150 °C VCE = – 20V, IC = – 40mA 1200 mV IF = 2.5mA 1540 mV Di VF 0.176 0.22 0.264 100 110 +0.2 0.65 –0.1 +0.2 0.8 –0.1 2.54±0.1 2.54±0.1 3.81±0.1 Ω 90 IE = 1A RE +0.2 0.65 –0.1 3.81±0.1 (7.62) Ω REB (18) 1.35 –0.1 (2.5) VBE °C (12.7) 17.8±0.3 4±0.1 Weight: Approx 8.3g a. Part No. b. Lot No. VhFE Rank O (5000 to 12000), Y (8000 to 20000) E S IC – VCE Characteristics (Typical) – A –1.2m Collector Current IC (A) –1.0mA –0.8mA –10 – 0.5mA –5 IB = –0.3mA 0 0 –2 –4 –2 IC = –15A –10A –1 –5A 0 –0.4 –6 25°C – 30°C 5000 1000 –0.3 –0.5 –1 –1 –5 –5 –50 0 –100 –200 –10 –2 –2.5 0.1 1 –15 5 10 50 100 500 1000 2000 Time t (ms) PC – Ta Derating Di IF – VF Characteristics (Typical) 150 m s –5 ite fin k sin at he Without Heatsink Natural Cooling 100 In –1 –0.5 5 ith Forward Current IF (mA) C W Maximum Power Dissipation Pc (W) 10 s D. –1 Base-Emitter Voltage VBE (V) 10 0m 0 0.5 –40 Collector Current IC (A) –10 1 Safe Operating Area (Single Pulse) 10 25°C Characteristics Collector Current IC (A) –10 125°C –5 3 j-a (°C/W) Transient Thermal Resistance DC Current Gain hFE j-a – t 125°C 10000 –10 Base Current IB (mA) hFE – IC Characteristics (Typical) 40000 (VCE =–4V) –30°C Collector-Emitter Voltage VCE (V) (VCE = – 4V) D B –15 –3 Collector Current IC (A) A –1.5m A m 2.0 C IC – VBE Temperature Characteristics (Typical) VCE(sat) – IB Characteristics (Typical) Collector-Emitter Saturation Voltage VCE(sat) (V) –50mA –5. 0m A –3 .0m A –15 1±0.1 +0.2 –40 to +150 Tj Tstg typ –100 IEBO 10 Di IF min VCEO 150 ( Tc=25°C) PC VCB = –160V 2±0.1 –160 Conditions ICBO (41) VCEO VEBO Symbol (Unit: mm) 5±0.2 V External Dimensions 7±0.2 22±0.3 ±0.3 23 28±0.3 –160 ( Ta = 25°C ) Ratings 3.3±0.2 VCBO sElectrical Characteristics Unit 3.4max sAbsolute maximum ratings (Ta=25°C) Ratings Emitter resistor RE: 0.22Ω Typ. S B (Complement to type SAP16N) Symbol E R: 100Ω Typ. SAP16P D 50 –0.1 –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage VCE (V) 170 –200 1 0 0.5 1.0 1.5 Forward Voltage VF ( V ) 2.0 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta (°C) 150
- 173. SAP Series Application Information 1.Recommended Operating Conditions ŒAdd a variable resistor (VR) between diode terminals to adjust the idling current. The resistor having 0 to 200Ω is to be used. Adjust the forward current flowing over the diodes at 2.5mA. ŽAdjust the idling current at 40mA with the external variable resistor. Both the temperature coefficients for the transistor and the diodes are matched under the above conditions. Both the PNP and the NPN are Darlington transistors, so the temperature change ratio of the total four VBE of the transistors is subject to the compensation. One PN junction diode in the NPN and five Schottky barrier diodes in the PNP are built-in, and the total six diodes are operating as the temperature compensation. The temperature coefficient of the total diodes (its variable value) becomes smaller with a larger forward current (approximately — 0.2mV/℃ to 1mA), and the coefficient of the total transistors (its variable value) also becomes smaller with a larger idling current (approximately — 0.1mV/℃ to 10mA), but the both variable values are small. Thus, the distortion of the temperature coefficient caused by the different current is small, so the thermal runaway may not be occurred due to the changes of the recommended ratings; however, the actual operation is to be confirmed by using an experimental equipment or board. +VCC NPN C B S D 2.5mA E 40mA E D External variable resistor (VR) (0 to 200Ω) S B PNP C –VCC 171
- 174. 2. External VariableResistor Total forward voltage (at IF =2.5mA) of the diodes is designed to be equal or less than that of total VBE (at IC = 40mA) of the transistor, thus the idling current is required to be adjusted at 40mA with an additional external variable resistor. The relations are shown as below: Total VF of Diode ∆V=0 to 500mV Total VBE of Transistor + Total VRE of Emitter Resistor The VBE of the transistor is dependent to the hFE, and the VBE is lower with higher hFE and vice versa. The hFE for both the PNP and the NPN varies between 5k and 20k; thus the VBE is the lowest with the combination of maximum hFE (20k) each and it is the highest with the combination of minimum hFE (5k) each. Presuming the voltage difference between the VF of the diodes and the VBE of the transistors (including the total voltage drops of the two emitter resistors) as ∆V. Minimum VBE – Maximum VF variations of the diodes = 0 Maximum VBE – Minimum VF variations of the diodes = 500mV The current flowing over the diodes and the VR is adjusted at 2.5mA; therefore 500mV 2.5mA = 200Ω Consequently, the applicable VR value is to be 0 to 200‰ VBE Min. (P and N: hFE Max.) VBE Max. (P and N: hFE Min.) IC 40mA Di VF Variations VBE TR VBE Variations ∆VF =500mV 172
- 175. 3. Characteristics ofthe temperature compensation diodes The several temperature compensation diodes are connected in series, so the forward voltage is varied with small current fluctuations. Therefore, in case the forward current flowing over the diodes is set at 2.5mA and over, the forward voltage rises, and in the worst combinations, the idling current reaches to 40mA and over with minimum VR of 0Ω. On the contrary, in case the forward current is set at 2.5mA or below, the idling current may not reach to 40mA with maximum VR of 200Ω. 10.0 Ta=25°C PN-Di SBD (5 diodes Total) PN–Di+SBD IF (mA) 5.0 1.0 0 500 1000 1500 2000 2500 3000 VF (mV) IF – VF Characteristics 4. Parallel push-pull application Adjustments of the idling current are required by each the resistor in parallel push-pull applications. One side adjustment will cause the idling current to be unstable (seesaw operation) because of the different hFE. To be adjusted individually 173
- 176. 5. Destruction capacityof the built-in emitter resistor A thick-film resistor is used for the built-in resistor. The thick-film resistor has weaker destruction point in the Pc area (especially for large current flowing area) than that of the transistor chip itself. There is less concern, however, as this is subject to the area beyond an Are of Safe Operation (A.S.O.). However, under the evaluation like a short circuit test in which the current exceeds the guaranteed value, it may cause the emitter resistor to be destroyed before the transistor itself is destroyed. Consequently, the current value (or time) that operates the protection circuit is to be set at lower than that of discrete device configurations. In the application of car audio amplifiers, the same manners as the above need to be considered because the large current is flowed at low impedance. In addition, once the transistor falls into thermal runaway due to a soldering failure to the external VR added between diodes or other failure manners, as the worst case, there may cause a resin crack or smoke emissions by flare up. Flame retardant molding resin is used, and the material of the product is conformed to the most sever standard UL94V0. However it is recommended that the careful consideration be given to a protection circuit, and the protection circuits should be provided appropriately in due course. If the operating conditions are not to be matched to the ratings, it is also recommended that the E (Emitter resistor) terminal should be opened and the external emitter resistor should be added to the S (Sensing) terminal shown as below. IC Transistor destruction point C Thick-film resistor destruction point B A.S.O. Curve S D External emitter resistor E Output terminal VCE 174
- 177.
- 178. Discontinued Parts Guide DiscontinuedParts Replace ment Parts Discontinued Parts Replacement Parts Discontinued Parts Replacement Parts 2SD219to221 2SC3179,3851,3851A 2SD219Fto221F 2SC3179,3851,3851A 2SD222to224 2SC3179,3851,3851A – 2SD236to238 2SC3179,3851,3851A 2SC1888to1889 2SC3852,3852A 2SD241to244 2SC3179,3851,3851A 2SA744to745 2SA1694to1695 2SC1829 – 2SA746to747 2SA1695 2SC1830 2SA764to765 2SA1725to1726 2SC1831 – 2SA807to808 2SA1693to1694 2SC1832 2SD2082,2083 2SA878 – 2SA892 2SB1351 2SC2022 2SC2023 2SD256to259 2SC3179,3851,3851A 2SA907to909 2SA1215to1216,1295 2SC2147 – 2SD419to421 2SD1769,1785 – 2SC2198 2SC4024 2SD556to557 2SC4468 2SA1694 2SC2199 2SC4131 2SD593to594 2SC4020 2SA1067 – 2SC2256 – 2SD605 2SA1068 – 2SC2260to2262 2SC4467 2SD606 2SA1102 2SA1693 2SC2302 2SC3832 2SD614to615 2SD1769,1785 2SA1103 2SA1694 2SC2303 2SC3833 2SD617 2SD2082 2SA1104 2SA1694 2SC2304 2SC3833 2SD721 2SD2081 2SA1105 2SA1695 2SC2305 – 2SD722 2SD2081 2SA1106 2SA1695 2SC2306 2SC4140 2SD807 2SC3679 2SA1116 2SA1493 2SC2307 2SC3833 2SD810 2SC4024 2SA1117 2SA1494 2SC2317 2SD2016 2SD971 – 2SA1135 2SA1693 2SC2354 2SC2023 2SD972 2SD1796 2SA1169 2SA1493 2SC2364 – 2SD1031 2SD1769,1785 2SA1170 2SA1494 2SC2365 2SC3831 2SD1170 2SD2045 2SA1187 – 2SC2491 2SC4024 2SD1532 2SD2015 2SA1205 2SA1746 2SC2492 – 2SD2231 2SD2493 2SA1355 2SA1262,1488 2SC2493 – 2SD2437 2SD2494 2SC2577 2SC4466 2SA971 2SA980to982 2SB622 – – – 2SB711to712 2SB1259,1351 2SC2578 2SC4467 2SB1005 2SB1257 2SC2579 2SC4467 2SA768to769 2SA1262,1488,1488A 2SB1476 2SB1624 2SC2580 2SC4468 2SA770to771 2SA1725,1726 2SB1586 2SB1625 2SC2581 2SC4468 2SA957to958 2SA1667,1668 2SC1107 2SC3179,3851 2SC2607 2SC3857 2SA1489 2SA1693 2SC1108 2SC3851A 2SC2608 2SC3858 2SA1490 2SA1694 2SC1109 2SC3179,3851 2SC2665 2SC4466 2SA1491 2SA1695 2SC1110 2SC3851A 2SC2723 2SC4140 2SA1643 2SA1725 2SC1111to1112 2SC4467to4468 2SC2761 – 2SA1670 2SA1907 2SC1113 2SC4511to4512 2SC2773 2SC3857 2SA1671 2SA1908 2SC1114 – 2SC2774 2SC3858 2SA1672 2SA1909 2SC1115to1116 2SC4468 2SC2809 – 2SB1624 2SB1685 2SC1402to1403 2SC4467to4468 2SC2810A 2SC4820 2SB1625 2SB1687 2SC2825 2SD2045 2SB1626 2SB1686 2SC1826to1827 2SC3179,3851,3851A 2SC1983to1984 2SC3852,3852A 2SC1985to1986 2SC4511,4512 2SC2167to2168 2SC4381,4382 2SC1436 – 2SC1437 – 2SC2838 – 2SC1440to1441 – 2SC2900 – 2SC1442to1443 – 2SC3409 2SC3679 2SC4511to4512 2SC3520 – 2SC3706 2SC1477 – 2SC3909 2SC3680 2SC1504 2SC2023 2SC4023 2SC5124 2SC1577to1578 2SC3833,3831 2SC4199,4199A 2SC5124 2SC1579to1580 2SC4706 2SC4302 2SC4301 2SC1584to1585 2SC2921-2922,3264 2SC4303,4303A 2SC5002 2SC1618to1619 2SC4466-4467 2SC4494 2SC4495 2SC1629 2SD2045 2SC4756 2SC5002 2SC1664 2SC4558 2SD15to18 2SC1768 – 2SC1777 2SC1444to1445 2SC4140 Repair Parts Replacement Parts 2SC2315to2316 2SC4558 2SC2810 2SC3890 2SC3300 2SC4131 2SC3853 2SC4466 2SC3854 2SC4467 2SC3855 2SC4468 2SC4385 2SC5099 2SC4386 2SC5100 2SC4387 2SC5101 2SC4468 2SC4503 2SD2083 2SD80to84 2SC4466,4467 2SC4558 2SD2495 – 2SD90to94 2SC3179,3851,3851A 2SC4820 2SC4518 2SC1783 – 2SD163to166 2SC4468 2SD2493 2SD2641 2SC1786 – 2SD201to203 2SC4466to4467 2SD2494 2SD2643 2SD211to214 2SC4468 2SD2495 2SD2642 2SC1454 2SC1828 176 2SC3832,3830 –
- 179. Sanken Electric Co.,Ltd. 1-11-1Nishi-Ikebukuro,Toshima-ku, Tokyo PHONE: 03-3986-6164 FAX: 03-3986-8637 Overseas Sales Offices ●Asia Sanken Electric Korea Co.,Ltd. SK Life B/D 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea PHONE: 82-2-714-3700 FAX: 82-2-3272-2145 Taiwan Sanken Electric Co.,Ltd. Room 902, No.88, Chung Hsiao E. Rd., Sec. 2 Taipei, Taiwan R.O.C. PHONE: 886-2-2356-8161 FAX: 886-2-2356-8261 Sanken Electric Singapore Pte.Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 0718 PHONE: 291-4755 FAX: 297-1744 Sanken Electric Hong Kong Co.,Ltd. 1018 Ocean Centre, Canton Road, Kowloon, Hong Kong PHONE: 2735-5262 FAX: 2735-5494 ●North America Allegro MicroSystems,Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615, U.S.A. PHONE: (508) 853-5000 FAX: (508) 853-7861 ●Europe Allegro MicroSystems Europe Limited. Balfour House, Churchfield Road, Walton-on-Thames, Surrey KT12 2TD, U.K. PHONE: 01932-253355 FAX: 01932-246622 Contents of this catalog are subject to change due to modification PRINTED in JAPAN H1-T01EE0-0107020SB