Curve Fitting results 1110
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The document reports on curve fitting results from weak inversion and square root of drain current measurements of two chips across different temperatures. It finds that threshold voltage increases with temperature for both chips. Mobility degradation with increasing temperature is observed to be more severe for Chip 1 compared to Chip 2. However, when considering velocity saturation effects, mobility degradation is reduced, calling into question the assumptions made in interpreting the mobility ratio fitting results. Understanding the underlying physics is needed to determine which phenomenon, mobility degradation or velocity saturation, is observed in the measurements.
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Original Mosfet L3705N L3705 3705 55V 75A TO-220 New
The document provides specifications for an IRL3705N HEXFET Power MOSFET. Key details include:
- It has a maximum continuous drain current of 89A, drain-source breakdown voltage of 55V, and on-resistance as low as 0.01 ohms.
- It utilizes advanced processing for low resistance and fast switching capabilities. This provides high efficiency and reliability.
- It is available in a TO-220 package suitable for commercial/industrial applications up to 50 watts and features low thermal resistance.
Original N-Channel Mosfet 2SK3484 3484 16A 100V TO-252 New Renesas Electronics
This document provides specifications for the 2SK3484 N-channel MOS field effect transistor (MOSFET) including:
- Electrical characteristics such as on-state resistance, gate cut-off voltage, and input/output capacitances.
- Thermal characteristics such as thermal resistance and power dissipation derating curves.
- Switching characteristics such as turn-on/off delay times and rise/fall times.
- Package drawings and equivalent circuit diagram for the TO-251 and TO-252 packages.
Original Mosfet F3205S 3205 IRF3205S IRF3205 55V 110A D2Pak New
This document provides information on IRF3205 power MOSFETs from International Rectifier. It summarizes the key specifications and performance characteristics of the MOSFETs, including an on-resistance of 8.0 mOhms, a continuous drain current of 110A, and an operating junction temperature range of -55°C to +175°C. The document also provides the package details, electrical characteristics, and test conditions/diagrams to evaluate the switching performance and safe operating area of the devices.
Mosfet irfz44 n 1 philips semiconductors
This document provides product specifications for the IRFZ44N N-channel enhancement mode trench transistor from Philips Semiconductors. The transistor features very low on-state resistance of 22 mOhms and is intended for use in switched mode power supplies and general purpose switching applications. Key specifications include a maximum drain-source voltage of 55V, drain current of 49A, and junction temperature range of -55°C to 175°C. The document provides detailed electrical characteristics, thermal properties, and mechanical dimensions of the device.
binary temp monitor_itt_dcote
This document describes a binary temperature monitor project using an 8-bit analog-to-digital converter. The project utilizes an ADC0808 8-bit A/D converter IC to convert the analog output of an AD594 thermocouple amplifier to an 8-bit binary number displayed from 0-255. A 555 timer configured as an astable multivibrator provides the clock for the A/D conversion. The circuit was designed, simulated, constructed, and tested, showing accurate conversion of temperature readings to the equivalent 8-bit binary number.
Different kinds of signals used in the DCS
The document discusses different types of signals used in distributed control systems, including analog input (AI), analog output (AO), digital input (DI), and digital output (DO) signals. It also describes resistance temperature detectors (RTDs) and thermocouples (TCs), explaining their advantages and disadvantages. Finally, it lists the specific signal types used to control motors, motor operated valves, pneumatic valves, and solenoid valves.
The making of the Perfect MOSFET Final
The document discusses the components that make up an optimal MOSFET, including silicon, packaging, and gate drivers. It analyzes various losses associated with each component, such as conduction losses, dynamic losses, and parasitic effects. Distributed parameters, parasitic resistances and inductances are shown to affect current rise times, shoot-through, and reverse recovery losses. Thermal and packaging considerations like footprint and price are also covered. Integration and current density optimization are important to designing the perfect MOSFET.
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Original Mosfet IRL3713PBF 3713 30V 180A TO-220 New IR
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Original Mosfet L3705N L3705 3705 55V 75A TO-220 New
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Original N-Channel Mosfet 2SK3484 3484 16A 100V TO-252 New Renesas Electronics
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Curve Fitting results 1110
- 2. Log(Id) VGS
- 3. Sqrt(Id) VGS
- 5. Weak-Inversion Fitting Temperature Effect Chip #1 T = 65F T = 80F T = 90F
- 6. Sqrt(Id) VGS Curve Fittings from Square Root of Drain Current Threshold voltage Slope1 Slope2 slope drops due to the degradation of mobility Depletion region charge
- 7. Threshold Voltage Fitting results Chip #1 T = 65F T = 80F T = 90F Chip #2 T = 69F
- 8. Leakage when Vgs = 0V VDS Punch-through GIDL DIBL
- 9. Mobility Ratio Fitting results Chip #1 T = 65F T = 80F T = 90F Chip #2 T = 69F Slope1 Slope2 K3 For chip#1, mobility will drop fourfold while it drops 2.5 times for chip #2
- 10. Velocity Saturation Chip #1 T = 65F T = 80F T = 90F Chip #2 T = 69F further to velocity saturation closer to velocity saturation
- 11. Mobility ratio Fitting Velocity Saturation Dominant Case Chip #1 Chip #2 Mobility only drops 1.1 times! Mobility only drops 1.04 times!
- 12. Problems So Far • In mobility ratio fitting results, the difference in two slopes lying only in the assumption of mobility difference under standard square law equation. • However, as the previous slide show, if velocity saturation kicks in, square law doesn't hold and the index can also be an coefficient. Thus, the mobility degradation effect will be reduced. • Nevertheless, the temperature effect is not affected. We need to understand the physics here to choose which phenomenon is here presented.