The driving engine for the exponential growth of digital information processing systems is scaling down the transistor dimensions. For decades, this has enhanced the device performance and density. However, the International Technology Roadmap for Semiconductors (ITRS) states the end of Moore’s law in the next decade due to the scaling challenges of silicon-based CMOS electronics, e.g. extremely high power density. The forward-looking solutions are the utilization of emerging materials and devices for integrated circuits, e.g. carbon-based materials. The presentation of my Ph.D. work focuses on graphene, one atomic layer of carbon sheet, experimentally discovered in 2004. Since fabrication technology of emerging materials is still in early stages, transistor modeling has been playing an important role for evaluating futuristic graphene-based devices and circuits. The device has been simulated by solving a quantum transport model based on non-equilibrium Green’s function (NEGF) approach, which fully treats short channel-length electrostatic effects and the quantum tunneling effects, leading to the technology exploration of graphene nanoribbon field effect transistors (GNR FETs) for the future. This research presents a comprehensive study of the width-dependence performance of the GNR FETs and the scaling of its channel length down to 2.5 nanometer, investigating its potential use beyond-CMOS emerging technology.
inert gas condensation synthesis of nanomaterial in physical methodNithishKannanbscphys
Its a way of synthesis of nanomaterials
in the form a thin films.
physical metholody of preparing nanomaterials.
thin films are the materials which has 1 dinension is in the scale 1 to 100 nanometer remaining 2 dimesions are above 100 nm meter.
In this method the target (the required material) is evaporated in a vacuum inert gas chamber and allowed to deposit in the substrate . In this method temperature plays a crucial role then this method comes under physical way of synthesising nanomaterials.
Invited lecture of the Simposium N "Surface Engineering - functional coatings and modified surfaces" at the XIII SBPMat (Brazilian MRS) meeting, in João Pessoa (Brazil). The lecture took place on September 29th, 2014.
The speaker was Christopher Muratore, "Wright Brothers Institute Endowed Chair Professor" at the Department of Chemical and Materials Engineering from University of Dayton (USA).
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
The driving engine for the exponential growth of digital information processing systems is scaling down the transistor dimensions. For decades, this has enhanced the device performance and density. However, the International Technology Roadmap for Semiconductors (ITRS) states the end of Moore’s law in the next decade due to the scaling challenges of silicon-based CMOS electronics, e.g. extremely high power density. The forward-looking solutions are the utilization of emerging materials and devices for integrated circuits, e.g. carbon-based materials. The presentation of my Ph.D. work focuses on graphene, one atomic layer of carbon sheet, experimentally discovered in 2004. Since fabrication technology of emerging materials is still in early stages, transistor modeling has been playing an important role for evaluating futuristic graphene-based devices and circuits. The device has been simulated by solving a quantum transport model based on non-equilibrium Green’s function (NEGF) approach, which fully treats short channel-length electrostatic effects and the quantum tunneling effects, leading to the technology exploration of graphene nanoribbon field effect transistors (GNR FETs) for the future. This research presents a comprehensive study of the width-dependence performance of the GNR FETs and the scaling of its channel length down to 2.5 nanometer, investigating its potential use beyond-CMOS emerging technology.
inert gas condensation synthesis of nanomaterial in physical methodNithishKannanbscphys
Its a way of synthesis of nanomaterials
in the form a thin films.
physical metholody of preparing nanomaterials.
thin films are the materials which has 1 dinension is in the scale 1 to 100 nanometer remaining 2 dimesions are above 100 nm meter.
In this method the target (the required material) is evaporated in a vacuum inert gas chamber and allowed to deposit in the substrate . In this method temperature plays a crucial role then this method comes under physical way of synthesising nanomaterials.
Invited lecture of the Simposium N "Surface Engineering - functional coatings and modified surfaces" at the XIII SBPMat (Brazilian MRS) meeting, in João Pessoa (Brazil). The lecture took place on September 29th, 2014.
The speaker was Christopher Muratore, "Wright Brothers Institute Endowed Chair Professor" at the Department of Chemical and Materials Engineering from University of Dayton (USA).
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Novel computing technologies that imitate the principles of biological neural systems may offer low power consumption along with distinct cognitive and learning advantages [1], [2]. The development of reliable memristive devices capable of storing multiple states of information has opened up new applications such as neuromorphic circuits and adaptive systems [3], [4]. At the same time, the explosive growth of the printed electronics industry has expedited the search for advanced memory materials suitable for manufacturing flexible devices [5].
The effect of the fourth group oxides on the sintering kinetics of tetragonal...Marharyta Lakusta
In the present paper was investigated the impact of small amount additives SiO2, SnO2 and TiO2 on the initial sintering stage of tetragonal zirconia nanopowders (3Y-TZP). It has been shown that different additives have significant influenced on phase composition, crystallite size and agglomeration degree of zirconia nanopowders which were manufactured by co-precipitation method. The sintering behavior of 3Y-TZP with and without a small amount 2 wt % of SiO2, SnO2 and TiO2 additives was investigated using the dilatometric data and analytical method to determining the sintering mechanism [1]. The shrinkage behavior of all nanopowders was measured under constant rate of heating technique (CRH). It was found that the sintering mechanism changed from volume (VD) to grain boundary diffusion (GBD) by addition 2 wt% SiO2, SnO2 and TiO2.
Introduction to nanoscience and nanotechnologyaimanmukhtar1
Introduction of nanoscience/nanotechnology ,properties/potential applications of nanomaterials and electrodeposition of metal single component and alloy nanowires in AAO template
We have compiled the most important slides from each speaker's presentation. This year’s compilation, available for free, captures the key insights and contributions shared during the DfMAy 2024 conference.
NO1 Uk best vashikaran specialist in delhi vashikaran baba near me online vas...Amil Baba Dawood bangali
Contact with Dawood Bhai Just call on +92322-6382012 and we'll help you. We'll solve all your problems within 12 to 24 hours and with 101% guarantee and with astrology systematic. If you want to take any personal or professional advice then also you can call us on +92322-6382012 , ONLINE LOVE PROBLEM & Other all types of Daily Life Problem's.Then CALL or WHATSAPP us on +92322-6382012 and Get all these problems solutions here by Amil Baba DAWOOD BANGALI
#vashikaranspecialist #astrologer #palmistry #amliyaat #taweez #manpasandshadi #horoscope #spiritual #lovelife #lovespell #marriagespell#aamilbabainpakistan #amilbabainkarachi #powerfullblackmagicspell #kalajadumantarspecialist #realamilbaba #AmilbabainPakistan #astrologerincanada #astrologerindubai #lovespellsmaster #kalajaduspecialist #lovespellsthatwork #aamilbabainlahore#blackmagicformarriage #aamilbaba #kalajadu #kalailam #taweez #wazifaexpert #jadumantar #vashikaranspecialist #astrologer #palmistry #amliyaat #taweez #manpasandshadi #horoscope #spiritual #lovelife #lovespell #marriagespell#aamilbabainpakistan #amilbabainkarachi #powerfullblackmagicspell #kalajadumantarspecialist #realamilbaba #AmilbabainPakistan #astrologerincanada #astrologerindubai #lovespellsmaster #kalajaduspecialist #lovespellsthatwork #aamilbabainlahore #blackmagicforlove #blackmagicformarriage #aamilbaba #kalajadu #kalailam #taweez #wazifaexpert #jadumantar #vashikaranspecialist #astrologer #palmistry #amliyaat #taweez #manpasandshadi #horoscope #spiritual #lovelife #lovespell #marriagespell#aamilbabainpakistan #amilbabainkarachi #powerfullblackmagicspell #kalajadumantarspecialist #realamilbaba #AmilbabainPakistan #astrologerincanada #astrologerindubai #lovespellsmaster #kalajaduspecialist #lovespellsthatwork #aamilbabainlahore #Amilbabainuk #amilbabainspain #amilbabaindubai #Amilbabainnorway #amilbabainkrachi #amilbabainlahore #amilbabaingujranwalan #amilbabainislamabad
HEAP SORT ILLUSTRATED WITH HEAPIFY, BUILD HEAP FOR DYNAMIC ARRAYS.
Heap sort is a comparison-based sorting technique based on Binary Heap data structure. It is similar to the selection sort where we first find the minimum element and place the minimum element at the beginning. Repeat the same process for the remaining elements.
NUMERICAL SIMULATIONS OF HEAT AND MASS TRANSFER IN CONDENSING HEAT EXCHANGERS...ssuser7dcef0
Power plants release a large amount of water vapor into the
atmosphere through the stack. The flue gas can be a potential
source for obtaining much needed cooling water for a power
plant. If a power plant could recover and reuse a portion of this
moisture, it could reduce its total cooling water intake
requirement. One of the most practical way to recover water
from flue gas is to use a condensing heat exchanger. The power
plant could also recover latent heat due to condensation as well
as sensible heat due to lowering the flue gas exit temperature.
Additionally, harmful acids released from the stack can be
reduced in a condensing heat exchanger by acid condensation. reduced in a condensing heat exchanger by acid condensation.
Condensation of vapors in flue gas is a complicated
phenomenon since heat and mass transfer of water vapor and
various acids simultaneously occur in the presence of noncondensable
gases such as nitrogen and oxygen. Design of a
condenser depends on the knowledge and understanding of the
heat and mass transfer processes. A computer program for
numerical simulations of water (H2O) and sulfuric acid (H2SO4)
condensation in a flue gas condensing heat exchanger was
developed using MATLAB. Governing equations based on
mass and energy balances for the system were derived to
predict variables such as flue gas exit temperature, cooling
water outlet temperature, mole fraction and condensation rates
of water and sulfuric acid vapors. The equations were solved
using an iterative solution technique with calculations of heat
and mass transfer coefficients and physical properties.
Understanding Inductive Bias in Machine LearningSUTEJAS
This presentation explores the concept of inductive bias in machine learning. It explains how algorithms come with built-in assumptions and preferences that guide the learning process. You'll learn about the different types of inductive bias and how they can impact the performance and generalizability of machine learning models.
The presentation also covers the positive and negative aspects of inductive bias, along with strategies for mitigating potential drawbacks. We'll explore examples of how bias manifests in algorithms like neural networks and decision trees.
By understanding inductive bias, you can gain valuable insights into how machine learning models work and make informed decisions when building and deploying them.
Characterization of CVD grown molybdenum disulfide monolayer and exfoliated Molybdenum Ditelluride flakes
1. Characterization of CVD
grown MoS2 monolayer
and exfoliated MoTe2
flakes
Yan Yan1, Xiang Ji2, Lin Zhou2, Jing Kong2
Mount Holyoke College, Massachusetts Institute of Technology
NSF DMR-1231319
2. Molybdenum disulfide (MoS2)
• Mo atoms sandwiched between two sub-
layers of S atoms by covalent bonds
• MoS2 monolayer is 0.7 nm thick
• Transition metal dichalcogenide (TMDC)
used in novel electronic and optoelectronic
devices
• Chemical vapor deposition or exfoliation
Chong et al., Nature Nanotechnology 2016
http://labs.cas.usf.edu/lamsat/facilities/images/facilit
ies%20-%20deposition/CVD%201.JPG
3. Chemical Vapor Deposition (CVD)
system for MoS2 growth
• PTAS (perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt) is a
seed which initiate nucleation for CVD synthesis of MoS2.
• S and MoO3 in the crucibles vaporize and diffuse bi-directionally and,
with aid of the seed, react on the surface of wafers that are placed face-
down right above the Mo crucible to produce MoS2
• The furnace heated to 600 ˚C, PTAS molecules diffuse across the surface
4. Factors that affect MoS2 nanocrystal
features
Growth
temperature
Mo: S ratio
Seeding promoter
5. CVD growth temperature
• 650 °C• 600 °C
Increasing growth temperature induces formation of multilayer MoS2
6. Mo: S ratio
• Mo: S = 1: 2• Mo: S = 1: 1 • Mo: S = 1: 5 • Mo: S = 1: 15
Wang et al. Chem. Mater. 2014, 26, 6371-6379
Mo : S >1:2 “chubby” triangle
Mo : S =1:2 equilateral triangle
Mo: S < 1:2 “skinny” triangle
Too much sulfur induces
formation of multilayer small
triangles
7. Seeding promoter (PTAS)
• Direct PTAS deposit
(600 °C)
• No seeding promoter
(750 °C)
• PTAS diffusion
( 600 °C)
Pro: Seeding promoter is conducive to formation of large
MoS2 nanocrystal and continuous film
Con: Seeding promoter increases the amount of impurities
deposited on the substrate
9. Molybdenum ditelluride (MoTe2)
1T’-MoTe2
• Monoclinic structure
• Semi-metallic
• High conductivity
Ju Li et al. Science 2014, 346, 1344-1347
Sergey A. Medvedev et al. Nature Comm. 2016,7,11038
• Transition metal dichalcogenides
• Different crystal structures, such as
2H-, 1T-, 1T’- and Td-type lattices
• Chemical vapor deposition and
exfoliation
Topological field effect transistor-
topological phase transition to
realize fast on/off switching
10. Outline
Polarization-resolved Raman spectra of 1T’-MoTe2 flake
Thickness-dependent Raman spectra of exfoliated 1T’-MoTe2 flakes
Thickness measurement of exfoliated flakes using AFM
Exfoliation of 1T’-MoTe2
11. Exfoliation
• 1. Separate MoTe2 flake using a sharp
blade
• 2. Place the flake on top of a piece of
sticky tape
• 3. Fold and unfold the tape repeatedly
until a almost transparent layer of MoTe2
grains appear on the tape
• 4. Stick the tape on top of a pre-cleaned
silicon wafer
• 5. Use a plastic tweezer to gently press the
tape against the wafer
• 6. Remove the tape gently and slowly
15. 1T’-MoTe2 flake used for polarization-
resolved Raman test
Anisotropic or isotropic?
Anisotropy is the property of being directionally dependent, which implies
different properties in different directions, as opposed to isotropy
Thickness ~ 6nm (8-9 layers)
18. Conclusion
• Growth temperature, Mo: S ratio, presence of seeding promotor
play important role in the feature of MoS2 monolayer
• Exfoliated 1T’-MoTe2 flakes have different properties with
different thicknesses
• 1T’-MoTe2 displays a polarization-resolved raman spectrum with
a 90 degree period cycle, indicating the material is anisotropic
19. Acknowledgement
Lin Zhou
Xiang Ji
Weisun Leong
Pin-Chun Shen
Pingge He
Yongjian Tang
Everyone else in the lab
Professor Jing Kong
Professor Kathy Aidala
• Mount Holyoke College
• Massachusetts Institute of Technology
• NSF Science Technology Center for
Integrated Quantum Materials
Editor's Notes
It will be interesting to show what I did during the summer
Molybdenum disulfide
MoS2 nanofilm disinfect water using sunlight. Small bandgap allows the material to adsorb visible light and generate electron-hole pairs that react with water to generate reactive oxygen species which can then kill 99.9% of bacterial in water.
Chemical vapor deposition is the chemical process that is often used by semiconductor industry to produce thin film. It’s basically a furnace.
Within this long tube, we place two cubicles that contain sulfure and molybdum troxide at a fixed distance. Then we place silicone wafers upside down on the Mo cubical. The lower side of the wafer is usually spin-casted a layer of seeding promotor called PTAS to promote MoS2 growth. The whole system is aired with Ar gas at a 9sccm flow rate and heated at around 600 degree. so both sulfur and molybdum trioxide can vaporize and diffuse, and react on the surface of the silicon wafer.
By main job task is to take AFM images at different conditions and look for the crucial factors that affect the features of MoS2, and here are three main factors that we
Here are the two AFM images of samples grown at different tempature. You can see a clear difference between the two growth tempatures, because at higher tempature, the features are much brighter and higher contrast and that means the scanned features are much thicker than the sample grown at lower tempature. Therefore, our conclusion
The growth of the crystal face is determined by the
1T prim
Raman spectroscopy is a spectroscopic technique used to observe vibrational, rotational, and other low-frequency modes in a system. Raman spectroscopy is commonly used in chemistry to provide a fingerprint by which molecules can be identified.
It relies on inelastic scattering, or Raman scattering, of monochromatic light, usually from alaser in the visible, near infrared, or near ultraviolet range. The laser light interacts with molecular vibrations, phonons or other excitations in the system, resulting in the energy of the laser photons being shifted up or down. The shift in energy gives information about the vibrational modes in the system. Infrared spectroscopy yields similar, but complementary, information.
Raman spectroscopy
What this means is that we polarize the light that is shone onto the sample and see how that changes the signals layout of the spectrum. And if there is a periodic change in the spectrum, that means the 1T—moTe2 is anisotropic, or in other words, it has different properties in different directions.
So by changing polarization lens every 30 degree and took a spectrum at that point, we were able acquire a series of data point, and by just looking at it, we can definitely spot a difference among the different spectra, especially the two peaks that are pointed by arrows. And it seems that there is a periodic pattern exists, and in order to identify the how many degrees consist a cycle
We divide the spectra into a group of every 90 degree, and if you compare these graphs with each other, they are almost identical, so the pattern repeat itself every 90 degrees