This document describes a technique for measuring interdiffusion in metallic multilayers during rapid heating using in situ X-ray reflectivity measurements. Key points:
- X-ray reflectivity is a sensitive probe for measuring interdiffusion as it is affected by changes in the composition modulation of the multilayer over time.
- A curved sample approach is used to collect a full reflectivity pattern simultaneously over a range of angles using a position-sensitive detector, allowing for in situ measurements during heating.
- Initial interdiffusion rates are determined from the decay of reflectivity peak intensities with increasing temperature. The activation energy for interdiffusion is found to be consistent with a grain boundary diffusion mechanism.
- At
Optical characterization of Se90S10-xCdx thin filmsIOSR Journals
Thin films of different thicknesses of Se90S10-xCdx, (x=0 and 5) were deposited by thermal evaporation technique onto glass substrates. X-ray diffraction patterns (XRD), differential thermal analysis (DTA) and energy dispersive X-ray spectroscopy (EDX) studies were carried out for samples in powder and thin film forms. XRD indicates that all the deposited thin films have an amorphous structure. The transmittance at normal incidence for these films was measured in the wavelength range 350–2500 nm. Applying Swanepoel's method successfully enabled to determine, with high accuracy, the film thickness, the real index of refraction and imaginary part of index of refraction. Regarding the optical absorption measurements; the type of optical transition and optical band gap were estimated as a function of photon energy. The effect of Cd addition on the refractive index, absorption coefficient and the optical band gap were investigated. The high frequency dielectric constant, the single oscillator energy, the dispersion energy and refractive index dispersion parameter were evaluated. Solar cell criterions have been considered. The results are interpreted in terms of concentration of localized states.
Optical characterization of Se90S10-xCdx thin filmsIOSR Journals
Thin films of different thicknesses of Se90S10-xCdx, (x=0 and 5) were deposited by thermal evaporation technique onto glass substrates. X-ray diffraction patterns (XRD), differential thermal analysis (DTA) and energy dispersive X-ray spectroscopy (EDX) studies were carried out for samples in powder and thin film forms. XRD indicates that all the deposited thin films have an amorphous structure. The transmittance at normal incidence for these films was measured in the wavelength range 350–2500 nm. Applying Swanepoel's method successfully enabled to determine, with high accuracy, the film thickness, the real index of refraction and imaginary part of index of refraction. Regarding the optical absorption measurements; the type of optical transition and optical band gap were estimated as a function of photon energy. The effect of Cd addition on the refractive index, absorption coefficient and the optical band gap were investigated. The high frequency dielectric constant, the single oscillator energy, the dispersion energy and refractive index dispersion parameter were evaluated. Solar cell criterions have been considered. The results are interpreted in terms of concentration of localized states.
A Study of Pulse by Pulse Microscale Patch Transfer Using Picosecond LaserIJERA Editor
The shape restoring capability of Ti/Ni has potential to overcome the shrinkage of polymer in mould cavity, which has potential of solving the demoulding problems and helps dimension accuracy in micro/nano injection molding. However, the deposition of Ti/Ni film precisely and securely on specific location of the micro mould cavity present difficulties with conventional deposition methods. In this paper, the use of photonic impact forward transfer method to deposit Ti/Ni film patches on specific locations of a substrate is demonstrate using a picosecond laser. Pulse by pulse deposition control parameters affecting position accuracy and spot size were studied in this paper. It was found that although laser power, and distance between donor films and the substrate all influence the spot sizes of pulse by pulse deposited patches, adjusting spot size by changing laser power is better than changing distance due to separated particles being found around the deposited film patches. Results of this study proved the feasibility of depositing Ti/Ni film patches on specific location using pico-second laser with high position accuracy. The potential of using photonic impact forward transfer as a complementing method to laser powder 3D printing of difficult to process material to produce better surface quality microproducts such as micro moulds for micro-injection molding is tremendous.
Invited lecture of the Simposium N "Surface Engineering - functional coatings and modified surfaces" at the XIII SBPMat (Brazilian MRS) meeting, in João Pessoa (Brazil). The lecture took place on September 30th, 2014.
The speaker was Professor Christoph Genzel, from the Helmholtz-Zentrum Berlin für Materialien und Energie (HZB), in Germany, where he heads the Department of Microstructure and Residual Stress Analysis and he coordinates a group of diffraction and scattering. Genzel is also Associate Professor at the Technische Universität Berlin.
Abstract
Terahertz spectral analysis has been conducted on epitaxially grown semiconductor structures. Epitaxially grown semiconductors are important for microelectronic and optoelectronic devices and also for integrated circuits
fabricated using semiconductors. In this paper, we report results of terahertz time-domain spectroscopy of grown
SiGe layers on Ge buffer and separately a Ge buffer that was grown on a Si <001> wafer. In particular, evolution of
the time-domain spectra as a function of thickness of both samples was investigated by the terahertz pump-probe
technique. Representative spectra were analyzed to determine the respective layers’ spectral signatures. It was found that the spectroscopic analysis uniquely identified different layers by characteristic absorbance peaks. In addition, terahertz imaging was conducted in a non-destructive, non-contact mode for detecting lattice stacking fault and dislocations. Sub-surface imaging of grown SiGe layers on Ge buffer and that of the Ge buffer grown on a Si wafer reveals interesting lattice features in both samples. A comparison with TEM images of the samples exhibits that the terahertz image reproduces the dimensions found from TEM images within the experimental error limits. In particular, 3D images of both samples were generated by the terahertz reconstructive technique. The images were analyzed by graphical means to determine the respective layer thicknesses. Thus, this technique offers a versatile tool for both semiconductor research and in-line inspections.
Invited lecture of the Simposium N "Surface Engineering - functional coatings and modified surfaces" at the XIII SBPMat (Brazilian MRS) meeting, in João Pessoa (Brazil). The lecture took place on September 29th, 2014.
The speaker was Tiberiu Minea, Professor at Université Paris-Sud (France), President of the French Federation of Scientific Societies and President of the Scientific and Technical Committee at the French Vacuum Society.
Effect of Sn Doping on Structural and Electrical Properties of ZnO Thin Films...journal ijrtem
Abstract: Un-doped and tin (Sn) doped ZnO films were deposited on heated glass substrates by chemical spray pyrolysis method
(CSP). The effect of Sn concentration on the structural, surface morphological and electrical properties of the SnO2 films was
investigated. XRD analyses showed that the obtained films are polycrystalline in nature with hexagonal structure with preferred
orientation of (101). Doping with tin (Sn) causes increase in the grain size. Atomic force microscopy images showed that the root
mean square of the average surface roughness's varied from (1.48 to 3.58) as dopant concentration increased from 0 to 5 wt.%. The
electrical properties of the Sn ZnO films were strongly influenced by doping concentration. The electrical resistance of the films was
sharply decreased as dopant concentration increased.
Keywords: (ZnO) thin films, Sn Doping, Structural and electrical Properties
A Study of Pulse by Pulse Microscale Patch Transfer Using Picosecond LaserIJERA Editor
The shape restoring capability of Ti/Ni has potential to overcome the shrinkage of polymer in mould cavity, which has potential of solving the demoulding problems and helps dimension accuracy in micro/nano injection molding. However, the deposition of Ti/Ni film precisely and securely on specific location of the micro mould cavity present difficulties with conventional deposition methods. In this paper, the use of photonic impact forward transfer method to deposit Ti/Ni film patches on specific locations of a substrate is demonstrate using a picosecond laser. Pulse by pulse deposition control parameters affecting position accuracy and spot size were studied in this paper. It was found that although laser power, and distance between donor films and the substrate all influence the spot sizes of pulse by pulse deposited patches, adjusting spot size by changing laser power is better than changing distance due to separated particles being found around the deposited film patches. Results of this study proved the feasibility of depositing Ti/Ni film patches on specific location using pico-second laser with high position accuracy. The potential of using photonic impact forward transfer as a complementing method to laser powder 3D printing of difficult to process material to produce better surface quality microproducts such as micro moulds for micro-injection molding is tremendous.
Invited lecture of the Simposium N "Surface Engineering - functional coatings and modified surfaces" at the XIII SBPMat (Brazilian MRS) meeting, in João Pessoa (Brazil). The lecture took place on September 30th, 2014.
The speaker was Professor Christoph Genzel, from the Helmholtz-Zentrum Berlin für Materialien und Energie (HZB), in Germany, where he heads the Department of Microstructure and Residual Stress Analysis and he coordinates a group of diffraction and scattering. Genzel is also Associate Professor at the Technische Universität Berlin.
Abstract
Terahertz spectral analysis has been conducted on epitaxially grown semiconductor structures. Epitaxially grown semiconductors are important for microelectronic and optoelectronic devices and also for integrated circuits
fabricated using semiconductors. In this paper, we report results of terahertz time-domain spectroscopy of grown
SiGe layers on Ge buffer and separately a Ge buffer that was grown on a Si <001> wafer. In particular, evolution of
the time-domain spectra as a function of thickness of both samples was investigated by the terahertz pump-probe
technique. Representative spectra were analyzed to determine the respective layers’ spectral signatures. It was found that the spectroscopic analysis uniquely identified different layers by characteristic absorbance peaks. In addition, terahertz imaging was conducted in a non-destructive, non-contact mode for detecting lattice stacking fault and dislocations. Sub-surface imaging of grown SiGe layers on Ge buffer and that of the Ge buffer grown on a Si wafer reveals interesting lattice features in both samples. A comparison with TEM images of the samples exhibits that the terahertz image reproduces the dimensions found from TEM images within the experimental error limits. In particular, 3D images of both samples were generated by the terahertz reconstructive technique. The images were analyzed by graphical means to determine the respective layer thicknesses. Thus, this technique offers a versatile tool for both semiconductor research and in-line inspections.
Invited lecture of the Simposium N "Surface Engineering - functional coatings and modified surfaces" at the XIII SBPMat (Brazilian MRS) meeting, in João Pessoa (Brazil). The lecture took place on September 29th, 2014.
The speaker was Tiberiu Minea, Professor at Université Paris-Sud (France), President of the French Federation of Scientific Societies and President of the Scientific and Technical Committee at the French Vacuum Society.
Effect of Sn Doping on Structural and Electrical Properties of ZnO Thin Films...journal ijrtem
Abstract: Un-doped and tin (Sn) doped ZnO films were deposited on heated glass substrates by chemical spray pyrolysis method
(CSP). The effect of Sn concentration on the structural, surface morphological and electrical properties of the SnO2 films was
investigated. XRD analyses showed that the obtained films are polycrystalline in nature with hexagonal structure with preferred
orientation of (101). Doping with tin (Sn) causes increase in the grain size. Atomic force microscopy images showed that the root
mean square of the average surface roughness's varied from (1.48 to 3.58) as dopant concentration increased from 0 to 5 wt.%. The
electrical properties of the Sn ZnO films were strongly influenced by doping concentration. The electrical resistance of the films was
sharply decreased as dopant concentration increased.
Keywords: (ZnO) thin films, Sn Doping, Structural and electrical Properties
We present long-baseline Atacama Large Millimeter/submillimeter Array (ALMA) observations of
the 870 m continuum emission from the nearest gas-rich protoplanetary disk, around TW Hya, that
trace millimeter-sized particles down to spatial scales as small as 1 AU (20 mas). These data reveal
a series of concentric ring-shaped substructures in the form of bright zones and narrow dark annuli
(1{6AU) with modest contrasts (5{30%). We associate these features with concentrations of solids
that have had their inward radial drift slowed or stopped, presumably at local gas pressure maxima.
No signicant non-axisymmetric structures are detected. Some of the observed features occur near
temperatures that may be associated with the condensation fronts of major volatile species, but the
relatively small brightness contrasts may also be a consequence of magnetized disk evolution (the
so-called zonal
ows). Other features, particularly a narrow dark annulus located only 1 AU from the
star, could indicate interactions between the disk and young planets. These data signal that ordered
substructures on AU scales can be common, fundamental factors in disk evolution, and that high
resolution microwave imaging can help characterize them during the epoch of planet formation.
Keywords: protoplanetary disks | planet-disk interactions | stars: individual (TW Hydrae)
Electron Diffraction Using Transmission Electron MicroscopyLe Scienze Web News
Electron diffraction via the transmission electron microscope is a powerful method for characterizing the structure of materials, including perfect crystals and defect structures. The advantages of elec- tron diffraction over other methods, e.g., x-ray or neutron, arise from the extremely short wavelength (≈2 pm), the strong atomic scattering, and the ability to exam- ine tiny volumes of matter (≈10 nm3). The NIST Materials Science and Engineer- ing Laboratory has a history of discovery and characterization of new structures through electron diffraction, alone or in combination with other diffraction methods. This paper provides a survey of some of this work enabled through electron mi- croscopy.
Detection of Low-Speed Layer (Lvl) In Seismic Refraction Survey Using Combine...iosrjce
A combination of two geophysical methods not only helps to enhance the accuracy of results but also
helps to detect the presence of a low velocity layer which cannot be detected by refraction shooting alone. The
Direct Current resistivity method was combined with the seismic refraction method to infer the lithology of
Nnodo (Latitude 6.300
- 6.320N and Longitude 8.100
- 8.120E), Nigeria, during which a low-velocity layer was
encountered. The major instruments used were the signal enhancement seismograph and the ABEM terrameter.
The seismic refraction method revealed three layers of the earth from its surface with velocities 300m/s,
1200m/s and 2100m/s which were interpreted as dry/loose sand, saturated sand and limestone respectively. The
resistivity method however, revealed five geoelectric layers with resistivity values 957 Ωm,363 Ωm,1033
Ωm,489 Ωm and 135 Ωm which were interpreted as dry soil, saturated sand, sandy clay, limestone and shale
respectively. A comparison of the two results showed that the third layer from the surface at Nnodo interpreted
as probably sandy clay( from the resistivity survey) was not detected in the seismic refraction survey. This was
suspected to be a low-velocity layer with a velocity of about 600m/s. Hence the layer of limestone according to
the seismic result is the fourth layer of the study area and not the third.The actual lithology of the third layer
which the seismic refraction method could not detect is sandy clay. This was evident from the resistivity result.
The lithologic sequence of the study area from the earth’s surface is therefore dry soil, saturated sand, sandy
clay, limestone and fractured shale(wet).
The International Journal of Engineering & Science is aimed at providing a platform for researchers, engineers, scientists, or educators to publish their original research results, to exchange new ideas, to disseminate information in innovative designs, engineering experiences and technological skills. It is also the Journal's objective to promote engineering and technology education. All papers submitted to the Journal will be blind peer-reviewed. Only original articles will be published.
The papers for publication in The International Journal of Engineering& Science are selected through rigorous peer reviews to ensure originality, timeliness, relevance, and readability.
Analysis and simulations of optimal geometry shapes of the 4 and 9 nano hole ...IJECEIAES
The possibility to limit and manipulate photons at nanometer scales attracted a lot of interest for exciting applications from subwavelength in laser, biosensors, biomedical and optoelectronics devices, the sensor optical properties, however; are complex due to two resonances through propagating and localized surface plasmons. The optical properties of surface plasmons (SPs) at the resonant wavelength is depending on the geometrical nanostructure of materials. In this article, we used different geometry of nanoholes array, 4 and 9 nanoholes array in a metallic film gold nanoparticle with different thickness (20,50,100) nm on SiO2 substrate with refractive index 1.46, we designed two different geometries; 4- holes: hole radius r1=200 nm, period p1=600 nm; and 9- holes: r2=100 nm, period p2=300 nm. Transmission and reflection spectrum have been calculated and simulated by FDTD Lumerical program. From results are observed the effect of thickness is interesting, transmission is increased at (t=20nm) for two arrays. Furthermore, the number of hole and its area has an influence on optical transmission and other parameters (E, H, Ref) which are characteristics of design of metallic nanostructure. We can see that there is a peak value of the wavelength at 519 nm approximately to 73% strong light transmission with 4-NHA in the other hand wavelength of 519 nm transmission is 45% with 9-NHA. strong light transmission is hopeful for many applications (biomedical devices, nanoantennas and laser optical fiber).
STM Observation of the Si(111) - (7×7) Reconstructed Surface Modified by Exce...IJECEIAES
The electronic properties of semiconductor surfaces change readily upon changing the carrier densities by controlling the dopant concentration. Additionally, excess dopant atoms can exert electric field which would affect the molecular adsorption process and could be used to manipulate the dynamic movement of confined molecules. A mechanism can be developed to control the molecular dynamic movement on modified semiconductor surface by dopants thus changing the effect of the electric field on the active molecules. In this study, the Si(111) surface was doped with phosphorus excessively using thermal diffusion process. The surface was then reconstructed to the 7×7 configuration via heating under UHV conditions and then studied through STM and STS techniques. The protrusions due to surface and subsurface P atoms appear brighter due to the lone electron pair. The 7×7 reconstruction would be destabilized after a critical P substitution of Si-adatom concentration due to high surface strain result in P-terminated (6√3×6√3)R30º reconstruction.
Annealing and Microstructural Characterization of Tin-Oxide Based Thick Film ...Anis Rahman
Abstract. The sheet resistance of tin oxide based thick-film resistors exhibits two regions of temperature dependence,
described by hopping (23°C-200°C) and diffusion mechanisms (200°C-350°C), respectively.
Annealing these samples causes the sheet resistance to increase in both regions. In the post-annealed samples,
the hopping conduction range is extended by 50°C (23°C-250°C) while the hopping parameter, To, is decreased by
more than 50%. The activation energy of diffusion (0.60 eV) is the same for both pre- and post annealed samples, but
the magnitude of resistance in the diffusion controlled region is increased significantly as a result of annealing. These
changes are explained in terms of a net decrease in the concentration of tin ions in the glass matrix. From a careful
microstructural study it was found that a conduction path composed of tin-oxide grains or their clusters in contact
with each other does not exist in the present system. HREM micrographs showed the presence of nanocrystalline
tin-oxide particles in the glass phase separating the tin-oxide grain clusters. Estimated average separation between
the nanocrystals in 4 nm, consistent with a variable-range hopping conduction via the dissolved tin ions in the glass
matrix.
Overview of the fundamental roles in Hydropower generation and the components involved in wider Electrical Engineering.
This paper presents the design and construction of hydroelectric dams from the hydrologist’s survey of the valley before construction, all aspects and involved disciplines, fluid dynamics, structural engineering, generation and mains frequency regulation to the very transmission of power through the network in the United Kingdom.
Author: Robbie Edward Sayers
Collaborators and co editors: Charlie Sims and Connor Healey.
(C) 2024 Robbie E. Sayers
Industrial Training at Shahjalal Fertilizer Company Limited (SFCL)MdTanvirMahtab2
This presentation is about the working procedure of Shahjalal Fertilizer Company Limited (SFCL). A Govt. owned Company of Bangladesh Chemical Industries Corporation under Ministry of Industries.
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
TECHNICAL TRAINING MANUAL GENERAL FAMILIARIZATION COURSEDuvanRamosGarzon1
AIRCRAFT GENERAL
The Single Aisle is the most advanced family aircraft in service today, with fly-by-wire flight controls.
The A318, A319, A320 and A321 are twin-engine subsonic medium range aircraft.
The family offers a choice of engines
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Automobile Management System Project Report.pdfKamal Acharya
The proposed project is developed to manage the automobile in the automobile dealer company. The main module in this project is login, automobile management, customer management, sales, complaints and reports. The first module is the login. The automobile showroom owner should login to the project for usage. The username and password are verified and if it is correct, next form opens. If the username and password are not correct, it shows the error message.
When a customer search for a automobile, if the automobile is available, they will be taken to a page that shows the details of the automobile including automobile name, automobile ID, quantity, price etc. “Automobile Management System” is useful for maintaining automobiles, customers effectively and hence helps for establishing good relation between customer and automobile organization. It contains various customized modules for effectively maintaining automobiles and stock information accurately and safely.
When the automobile is sold to the customer, stock will be reduced automatically. When a new purchase is made, stock will be increased automatically. While selecting automobiles for sale, the proposed software will automatically check for total number of available stock of that particular item, if the total stock of that particular item is less than 5, software will notify the user to purchase the particular item.
Also when the user tries to sale items which are not in stock, the system will prompt the user that the stock is not enough. Customers of this system can search for a automobile; can purchase a automobile easily by selecting fast. On the other hand the stock of automobiles can be maintained perfectly by the automobile shop manager overcoming the drawbacks of existing system.
Vaccine management system project report documentation..pdfKamal Acharya
The Division of Vaccine and Immunization is facing increasing difficulty monitoring vaccines and other commodities distribution once they have been distributed from the national stores. With the introduction of new vaccines, more challenges have been anticipated with this additions posing serious threat to the already over strained vaccine supply chain system in Kenya.
Courier management system project report.pdfKamal Acharya
It is now-a-days very important for the people to send or receive articles like imported furniture, electronic items, gifts, business goods and the like. People depend vastly on different transport systems which mostly use the manual way of receiving and delivering the articles. There is no way to track the articles till they are received and there is no way to let the customer know what happened in transit, once he booked some articles. In such a situation, we need a system which completely computerizes the cargo activities including time to time tracking of the articles sent. This need is fulfilled by Courier Management System software which is online software for the cargo management people that enables them to receive the goods from a source and send them to a required destination and track their status from time to time.
Quality defects in TMT Bars, Possible causes and Potential Solutions.PrashantGoswami42
Maintaining high-quality standards in the production of TMT bars is crucial for ensuring structural integrity in construction. Addressing common defects through careful monitoring, standardized processes, and advanced technology can significantly improve the quality of TMT bars. Continuous training and adherence to quality control measures will also play a pivotal role in minimizing these defects.
Final project report on grocery store management system..pdfKamal Acharya
In today’s fast-changing business environment, it’s extremely important to be able to respond to client needs in the most effective and timely manner. If your customers wish to see your business online and have instant access to your products or services.
Online Grocery Store is an e-commerce website, which retails various grocery products. This project allows viewing various products available enables registered users to purchase desired products instantly using Paytm, UPI payment processor (Instant Pay) and also can place order by using Cash on Delivery (Pay Later) option. This project provides an easy access to Administrators and Managers to view orders placed using Pay Later and Instant Pay options.
In order to develop an e-commerce website, a number of Technologies must be studied and understood. These include multi-tiered architecture, server and client-side scripting techniques, implementation technologies, programming language (such as PHP, HTML, CSS, JavaScript) and MySQL relational databases. This is a project with the objective to develop a basic website where a consumer is provided with a shopping cart website and also to know about the technologies used to develop such a website.
This document will discuss each of the underlying technologies to create and implement an e- commerce website.
1. research papers
796 https://doi.org/10.1107/S1600577517008013 J. Synchrotron Rad. (2017). 24, 796–801
Received 16 December 2016
Accepted 30 May 2017
Edited by D. A. Reis, SLAC National
Accelerator Laboratory, USA
‡ Present address: Joint Center for Artificial
Photosynthesis, California Institute of
Technology, Pasadena, CA 91125, USA.
Keywords: X-ray reflectivity; multilayer;
interdiffusion.
X-ray reflectivity measurement of interdiffusion
in metallic multilayers during rapid heating
J. P. Liu,a,b
J. Kirchhoff,a
L. Zhou,a
‡ M. Zhao,a
M. D. Grapes,a
D. S. Dale,c
M. D. Tate,d
H. T. Philipp,d
S. M. Gruner,c,d,e
T. P. Weihsa
and T. C. Hufnagela
*
a
Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD 21218, USA, b
School
of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, People’s Republic of China,
c
Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853, USA, d
Department of Physics,
Cornell University, Ithaca, NY 14853, USA, and e
Kavli Institute at Cornell for Nanoscale Science, Cornell University,
Ithaca, NY 14853, USA. *Correspondence e-mail: hufnagel@jhu.edu
A technique for measuring interdiffusion in multilayer materials during rapid
heating using X-ray reflectivity is described. In this technique the sample is bent
to achieve a range of incident angles simultaneously, and the scattered intensity
is recorded on a fast high-dynamic-range mixed-mode pixel array detector.
Heating of the multilayer is achieved by electrical resistive heating of the silicon
substrate, monitored by an infrared pyrometer. As an example, reflectivity data
from Al/Ni heated at rates up to 200 K s1
are presented. At short times the
interdiffusion coefficient can be determined from the rate of decay of the
reflectivity peaks, and it is shown that the activation energy for interdiffusion
is consistent with a grain boundary diffusion mechanism. At longer times the
simple analysis no longer applies because the evolution of the reflectivity
pattern is complicated by other processes, such as nucleation and growth of
intermetallic phases.
1. Introduction
Solid-state interdiffusion is of profound importance in
nanostructured materials, where the diffusion distances are
short and diffusion times can be small. In semiconductor
electronics, for example, the possibility of device failure
resulting from interdiffusion has spurred extensive research
into materials that can act as diffusion barriers between device
components (Nicolet, 1997). Because common analysis tech-
niques either require destructive depth profiling or are rather
slow, most studies of interdiffusion are performed ex situ,
often after isothermal annealing. Such studies usually assume
that the transients associated with heating and cooling the
specimen can be neglected.
In some situations, however, the transients themselves are
of interest, for example in rapid thermal annealing. In other
situations, interfacial reactions alter the structure of the
material in ways that make the interpretation of interdiffusion
measurements after the fact difficult or impossible. It is
therefore desirable to develop experimental techniques that
allow measurements in situ, while interdiffusion is occurring.
One such technique is X-ray reflectivity (low-angle
diffraction) performed on multilayer materials. In the low-
angle region the intensities of X-ray scattering peaks are
related to the composition modulations through the thickness
of the multilayer. By monitoring the change in the intensities
of these peaks we can measure interdiffusion. In fact, X-ray
reflectivity is among the most sensitive probes of interdiffu-
ISSN 1600-5775
2. sion, capable of measuring interdiffusion coefficients as low as
1027
m2
s1
(Greer, 1997).
In a conventional X-ray reflectivity measurement the scat-
tered intensity is recorded by step-scanning through a range of
angles. This makes in situ observations impractical except for
slow processes. To overcome this limitation, several techni-
ques have been developed for recording complete reflectivity
patterns simultaneously. For example, using a curved specimen
one can record the scattering over a range of angles simulta-
neously using a position-sensitive X-ray detector (Naudon
et al., 1989; Niggemeier et al., 1997; Stoev Sakurai, 2013).
Another approach is to use an X-ray beam with a range of
wavelengths, either by dispersing the X-ray beam into a range
of angles (Matsushita et al., 2008) (again using a position-
sensitive detector) or, at a single angle, recording scattering
with an energy-sensitive detector (Neissendorfer et al., 1999;
Raghavendra Reddy et al., 2009).
In this paper we show how to use the curved-sample
approach to perform time-resolved in situ X-ray reflectivity
characterization of the initial stages of interdiffusion during
continuous heating of metallic multilayers. We have tested our
technique at heating rates up to 200 K s1
, but in principle it
can be applied at much higher rates, limited by the intensity of
the X-ray source and the capabilities of the X-ray detector.
During the initial stages of heating we can determine the
interdiffusion coefficient ~
D
D by a simple analysis of the rate of
decay of the peaks in the reflectivity pattern, which are related
to the composition modulation of the multilayer. At longer
times this simple analysis becomes unreliable because the
reflectivity pattern is affected by other processes, such as
nucleation and growth of intermetallic phases.
2. Experimental
The samples for this study were multilayer foils produced by
DC magnetron sputtering alternating layers of alluminum
alloy 1100 with layers of nickel–7 wt% vanadium. The ratio of
the Al layer thickness to the Ni–V layer thickness was 3:2,
which yields an atomic ratio of Al:Ni–V of 1:1. The bilayer
period of the layers (i.e. the sum of one Al and one Ni–V layer
thickness) was 20–30 nm. Because X-ray reflectivity is strongly
sensitive to the roughness of the layers and the roughness
increases with the number of layers deposited, we restricted
the thickness of our samples to three to six bilayer periods
(Al/Ni layer pairs). The multilayers were deposited onto
500 mm-thick polished Si wafers, onto which we also deposited
300 nm-thick gold pads by thermal evaporation (Fig. 1a).
(A 20 nm-thick layer of tungsten was deposited first to
promote adhesion of the gold to the silicon substrate.) The
gold pads provided electrical contacts to permit resistive
heating of the doped Si substrate, which in turn heated the
multilayer. The power source for these experiments was a
series array of 9 Vor 12 V batteries, switched with a solid-state
relay to allow control of the duration of the current pulse. We
monitored the temperature of the multilayer during heating
with a single-wavelength infrared pyrometer (Kleiber KGA
740-LO), sampling at 50 Hz. The lowest temperature that can
be measured with this pyrometer is 475 K, so we were unable
to use it to track the very earliest stages of heating.
Angle-dispersive X-ray reflectivity uses curved specimens
so that the angle of incidence of X-rays on the surface varies
with position, as shown in Fig. 1(b). Although multilayers can
be deposited on curved substrates, we elected instead to use
flat substrates which we then bent in a specially designed
loading fixture. Pragmatically, flat substrates are cheaper than
precisely polished curved substrates, and it is easier to deposit
uniform multilayers on them. This approach also allows flex-
ibility in choosing the radius of curvature (and thus the range
of angles over which the reflectivity is measured). Our four-
point bending apparatus is illustrated in Fig. 1(b). The two
lower loading rods are fixed in position, and bending is
achieved by using stepper motors to displace the two upper
rods. Gaps in the upper rods (not shown) provide a clear path
for the X-rays, and the rods (which are made of steel) are
electrically isolated from the substrate by kapton tape. Prior to
each reflectivity measurement we measured the curvature of
the specimen by means of a parallel-beam curvature setup
similar to that described by Floro et al. (1996).
The experiments described here were performed at station
A2 of the Cornell High Energy Synchrotron Source (CHESS)
using a Si(111) double-crystal monochromator to select
12.0 keV X-rays, with a flux of approximately 5 1010
photons
s1
mm2
. The beam height (0.3 mm) yielded a range of
incident angles from zero to approximately 1.3
, depending on
the radius of curvature of the specimen (typically about
research papers
J. Synchrotron Rad. (2017). 24, 796–801 J. P. Liu et al. X-ray reflectivity measurement of interdiffusion 797
Figure 1
(a) The samples had lithographically patterned regions of Al/Ni
multilayer (4 cm long by 1 cm wide) along with gold pads (0.5 cm by
1 cm) to act as electrical contacts. (b) The samples were dynamically bent
in a four-point loading apparatus, with the curvature of the specimen
measured by a laser wafer-curvature technique and temperature
monitored by an optical pyrometer. (c) Example raw data from a 3 1
section of chips on the MMPAD array.
3. 500 mm). The X-ray detector was a mixed-mode pixel array
detector (MMPAD), which is capable of framing continuously
at high rates (up to 1 kHz) and has a large dynamic range
(4 107
photons pixel1
) (Tate et al., 2013). The dynamic
range is useful because it allows both the low- and high-order
scattering peaks, which can differ in intensity by many orders
of magnitude, to be measured simultaneously. The detector
used here employed a 3 2 array of MMPAD chips (with
each chip having a square 128 128 array of 150 mm pixels)
although only a single row of three chips was used for these
measurements (Fig. 1c). With this detector placed 1013 mm
from the sample we recorded scattering over a range of scat-
tering vectors (q = 4 sin =, where is one-half of the
scattering angle and is the X-ray wavelength) of about
3 nm1
. The width of the X-ray beam was 1 mm, and the one-
dimensional reflectivity patterns shown below were obtained
by simply summing the output from the detector across the
width of the beam at each row of pixels corresponding to a
given value of q.
Fig. 2 shows X-ray reflectivity data from an Al/Ni multilayer
sample with a nominal bilayer period of = 20 nm, recorded
two ways: using the apparatus described above, and on a
conventional parallel-beam diffractometer (Philips MRD)
using Cu K radiation with the sample nominally flat.
Although the basic features of the laboratory reflectivity data
are reproduced in the in situ synchrotron experiment, the
agreement is not perfect. There are several reasons for this.
First, the in situ technique records some non-specular scat-
tering (incident 6¼ exit) in addition to the desired specular
scattering (incident = exit). Second, there is variation in the
incident intensity in the in situ case due to the intensity profile
along the height of the synchrotron beam. Third, no attempt
has been made to correct for geometrical aberrations such as
anticlastic bending of the substrate. Finally, the energy band-
pass and the angular divergence of the X-ray beam are
different between the two cases.
Despite these differences the two reflectivity profiles are in
reasonably good agreement. Both profiles show an intensity
plateau below about q = 0.4 nm1
which is due to total
external reflection of X-rays from the multilayer. Above this,
both profiles show a series of low-angle scattering peaks from
the multilayer structure.
3. Results and discusson
Fig. 3(a) shows reflectivity data from an Al/Ni multilayer
recorded in situ during heating at 40 K s1
. The intensity of the
first peak (shown in the inset) decreases with increasing
temperature. The amplitudes of the peaks in the low-angle
region are proportional to the square of the amplitude of the
composition modulation (Cook, 1969; Paulson Hilliard,
1977). If no phase transformation occurs (a point to which we
return below) as interdiffusion proceeds, the composition of
the multilayer becomes more uniform and the intensity of the
low-angle peaks decreases.
For the more common case of interdiffusion studied at
constant temperature, the intensity of a low-angle scattering
peak IðtÞ at time t is related to that at initial time t0 by
ln
IðtÞ
Iðt0Þ
¼
82
n2 ~
D
Dt
2
; ð1Þ
where n is the order of the reflection and ~
D
D is the interdiffu-
sion coefficient (Wang et al., 1999). The bulk interdiffusion
research papers
798 J. P. Liu et al. X-ray reflectivity measurement of interdiffusion J. Synchrotron Rad. (2017). 24, 796–801
Figure 2
Comparison of reflectivity profiles measured with the in situ apparatus
and a conventional laboratory diffractometer. The intensities have been
normalized to match in the total external reflection region at small q.
Here, and in the other figures, log refers to base-10 logarithm while
ln refers to natural (base e) logarithm
Figure 3
(a) Evolution of the X-ray reflectivity of an Al/Ni multilayer with nominal bilayer period = 25 nm during heating at 40 K s1
. Each exposure was
100 ms. The inset shows the first low-angle scattering peak in more detail. (b) Evolution of peak intensity, plotted as ln[I(T)/I(473 K)], with time for
determination of ~
D
D.
4. coefficient ~
D
D can therefore be determined from the slope of a
plot of ln½IðtÞ=Iðt0Þ against t.
There are several issues with applying equation (1) to the
present case. First, our experiments were conducted at
constant heating rate. We make the assumption that because
our heating rates are high and ~
D
D increases exponentially with
temperature, the amount of interdiffusion that occurs at
temperature T over a given interval t is large compared with
the amount of interdiffusion that occurred in heating up to
that temperature. This assumption is easily checked by
comparing the integral of the diffusion equation for constant
heating rate with that for isothermal interdiffusion (given the
activation energy for interdiffusion) (Khawam Flanagan,
2006). This assumption allows us to recast equation (1) in
terms of temperature and write
ln
IðTÞ
IðT0Þ
¼
82
n2 ~
D
Dt
2
; ð2Þ
where t is the interval between measurements (100 ms for
the experiments described here). Fig. 3(b) shows a plot of
ln½IðTÞ=IðT0Þ against t, for T0 = 473 K.
Another potential complication in the application of
equation (1) for measuring interdiffusion in multilayers is that
it does not apply to situations in which the concentration
gradients are very steep. As discussed by Greer Spaepen
(1985), however, this effect is small when the bilayer period
6d, where d is the atomic spacing parallel to the diffusion
direction. The interplanar spacings of Al and Ni are around
2.0–2.3 Å [for the Ni(111) and Al(111) planes, respectively],
much smaller than the bilayer periods used here (20–30 nm).
Furthermore, the substantial intermixing that occurs during
sputter deposition of Al/Ni multilayers (Gavens et al., 2000)
acts to reduce the concentration gradient. Therefore, equation
(1) can be applied without an explicit correction for the effect
of the concentration gradient.
Fig. 4(a) shows the interdiffusion coefficient ~
D
D as a function
of temperature, determined from the decay of the low-angle
scattering peaks using equation (2), for several combinations
of bilayer period and heating rates. We begin by focusing our
attention on the low-temperature end of Fig. 4(a). If the
evolution of the composition profile is dominated by a single
thermally activated diffusion mechanism, then ~
D
D should
increase exponentially with temperature. To check this,
Fig. 4(b) shows an Arrhenius plot of ln ~
D
D versus 1/T for the
= 25 nm multilayer heated at 40 K s1
. We see that at the
lowest temperatures the behavior is indeed linear, with an
apparent activation energy for interdiffusion of Ea = 92
7 kJ mol1
. Data for the = 30 nm multilayer heated at
200 K s1
yield a similar value, Ea = 80 19 kJ mol1
. We
were not able to extract a reliable activation energy for the
smallest bilayer period ( = 20 nm) due to substantial inter-
diffusion that occurred during heating up to the lowest
temperature at which we could make reliable pyrometer
measurements (475 K).
Du and co-workers (Du et al., 2003) performed a critical
assessment of bulk interdiffusion coefficients in a variety of
systems and reported an activation energy of Ea =
144.6 kJ mol1
for diffusion of Ni in face-centered-cubic Al,
based on indirect observations by Erdélyi and co-workers
(Erdélyi et al., 1978). If we assume that interdiffusion is
dominated by diffusion of nickel [because nickel is known to
be a fast diffuser in aluminium (Edelstein et al., 1994)], as a
rough approximation we may also take this value of activation
energy as representative of interdiffusion. For Ni-rich alloys,
Watanabe and co-workers reported higher activation energies
for interdiffusion, Ea = 214–277 kJ mol1
(Watanabe et al.,
1994). Taken together, this prior work, though limited,
suggests an activation energy for interdiffusion of roughly Ea =
200 50 kJ mol1
.
However, those earlier measurements were from higher
temperatures [742–924 K (Erdélyi et al., 1978) and 1050–
1400 K (Watanabe et al., 1994)] than those we used for our
determination of Ea (Fig. 4b). It is reasonable to suspect that
grain boundary diffusion may dominate at lower tempera-
tures, particularly for our multilayers where the grain size is
research papers
J. Synchrotron Rad. (2017). 24, 796–801 J. P. Liu et al. X-ray reflectivity measurement of interdiffusion 799
Figure 4
(a) Interdiffusion coefficient ~
D
D for several combinations of bilayer period and heating rate. Labels A, B and C identify the peaks in ~
D
D for the multilayer
with = 25 nm discussed in the main text and referenced in Fig. 5. The inset shows the data for = 20 nm in more detail. (b) Arrhenius plot for
determination of activation energy Ea for the = 25 nm sample from part (a). The fit is to the five data points from the lowest temperature range (485 K
to 530 K).
5. of the order of a few nanometers. If we assume that this is
the case, and that the activation energy for grain boundary
diffusion is about half that for lattice diffusion [based on an
average value for face-centered-cubic metals (Brown (1980)],
we arrive at a value of around 100 25 kJ mol1
. This is
consistent with recent measurements (at temperatures similar
to ours) by Grieseler and co-workers who reported Ea =
120 kJ mol1
and also assumed a grain boundary diffusion
mechanism (Grieseler et al., 2014). Another point of
comparison is an activation energy for solid-state interdiffu-
sion of 77 1 kJ mol1
calculated by Fritz and co-workers
based on the ignition threshold for self-propagating reactions
in Al/Ni–V multilayers very similar to those considered here
(Fritz et al., 2013). All of these numbers are reasonably
consistent with our measured values of 90 kJ mol1
.
After this initial stage of interdiffusion during which ~
D
D
increases exponentially with temperature, more complex
behavior is observed at higher temperatures (Fig. 4a). This
complexity presumably results from other processes that also
affect the composition profile of the multilayer. Al/Ni multi-
layers undergo a series of intermetallic formation reactions
with increasing temperature, the details of which depend on
the overall composition, bilayer period and heating rate
(Knepper et al., 2009; Grapes et al., 2014). Activation energies
for phase transformations occurring at constant heating rate
are commonly determined using the Kissinger equation,
ln
_
T
T
Tpeak
!
¼ ln
AR
Ea
Ea
RTpeak
; ð3Þ
where _
T
T is the heating rate, Tpeak is the temperature at the
peak maximum in a DSC scan, A is a pre-exponential
constant, R is the gas constant and Ea is the activation energy.
Data drawn from Grapes (2016) for the formation of Al3Ni,
Al3Ni2 and AlNi at various heating rates are shown in Fig. 5.
Also indicated on this plot are the temperatures of the three
peaks in ~
D
D labeled A, B and C in Fig. 4(a) for the = 25 nm
sample heated at 40 K s1
. Peaks B and C appear at
temperatures close to those expected for the formation of
Al3Ni and Al3Ni2, respectively. The decrease in apparent ~
D
D
above these temperatures may or may not be real. The
intermetallic phases act as diffusion barriers and reduce ~
D
D,
although we note that these phases also have grain boundaries
which would reduce their effectiveness as diffusion barriers.
Alternatively, the formation of the intermetallic phases may
affect the reflectivity pattern in ways that only make it appear
that ~
D
D is decreasing.
Peak A, on the other hand, occurs at a lower temperature
than would be expected for formation of any intermetallic
phase at this heating rate. In our view, this behavior most
likely results from the composition dependence of ~
D
D. In
particular, if grain boundary diffusion dominates at low
temperatures then it may be that the Al grain boundaries
quickly become saturated with Ni, which would slow down
subsequent diffusion.
4. Conclusions
We have demonstrated an X-ray reflectivity technique for
measuring solid-state interdiffusion in multilayer materials
during rapid heating. Here we have demonstrated the tech-
nique at rates of up to 200 K s1
but it could readily be
extended to higher rates. We have, for example, collected
reflectivity patterns with reasonably good signal-to-noise
ratios in as little as 2 ms, implying the ability to collect data at
heating rates as fast as 104
K s1
. More detailed studies, for
example of interlayer roughness, may also be possible from a
more complete consideration of the two-dimensional reflec-
tivity profiles (Fig. 1). This would require careful corrections
for the intensity profile of the incident beam and geometrical
aberrations due to the curved sample (Stoev Sakurai, 2013),
along with modeling of the specular and diffusion scattering
from the specimens.
Acknowledgements
JK, MZ, LZ, TPW and TCH gratefully acknowledge support
for this work from the US Department of Energy under grant
No. DE-SC002509. JPL gratefully acknowledges financial
support from the Chinese Scholarship Council (CSC). This
work is based upon research conducted at the Cornell High
Energy Synchrotron Source (CHESS) which is supported by
the National Science Foundation and the National Institutes
of Health/National Institute of General Medical Sciences
under NSF award DMR-1332208. Detector development at
Cornell is supported by the DOE Grant No. DE-SC0016035
and CHESS.
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J. Synchrotron Rad. (2017). 24, 796–801 J. P. Liu et al. X-ray reflectivity measurement of interdiffusion 801