Power electronics

1. IGBT
Insulated Gate Bipolar Transistor
GYANMANJARI INSTITUTE OF
TECHNOLOGY,BHAVNAGAR
Power Electronics
“Less Losses” “High Efficiency”

2. Presented By:
Beldiya Gautam T. (161293109001)
Chauhan Dharmendra A. (161293109003)
Dodiya Deep D. (161293109004)
Gohil Sanjay D. (161293109005)
Guided By :
Prof. Jimit Shukla
GYANMANJARI INSTITUTE OF
TECHNOLOGY,BHAVNAGAR

3. 1
OUTLINE
4. Static I-V characteristics and transfer characteristics of IGBT
1. Introduction About IGBT
2. Basic Structure of IGBT
3. Equivalent & Working circuit of IGBT
5. Switching characteristics
6. Advantages & Disadvantages of IGBT
7. Application of IGBT
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4. 1. Introduction About IGBT
 Combination of BJT & PMOSFET
 High Input Impedance like a PMOSFET.
 Low on state power loss like a BJT.
 In IGBT second breakdown problem is not present.
 Voltage controlled device.
 Three terminal device.
SOME OTHERS NAME OF IGBT:
 MOSIGT - metal oxide gate bipolar junction transistor
 COMFET - conductively modulated field effect transistor
 GEMFET – gate modulated field effect transistor
Figure of IGBT
Symbol of IGBT
Collector
Gate
Emitter
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5. 2. Basic Structure of IGBT
p+ substrate
n- substrate
p p
n+ n+ n+ n+
Metal
Injection layer
Drift layer
Silicon dioxide
Metal
j1
j2
j3 Body of IGBT
Gate
Emitter
Collector
Current path
Do You Know?
 The p+ layer is called
injection layer
because it inject
holes in to n- layer.
 The thickness of n-
layer determine
voltage blocking
capability of IGBT.
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6.  IGBT & PMOSFET are same in structure but main difference between in the
substrate.
 The n+ layer substrate at the drain in PMOSFET is now substitute in the IGBT by
a p+ layer substrate is called collector C.
 The p layer is called body of IGBT.
Do You Know?
IGBT was also initially
called
Insulated gate
transistor(IGT).
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7. 3. Equivalent & Working circuit of IGBT
Equivalent circuit of IGBT
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8. 4. Static I-V characteristics and transfer
characteristics of IGBT
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9. 5. Switching characteristics 7
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10. 6. Advantages & Disadvantages of IGBT
Advantages:
 Low on-state voltage drop.
 Superior on-state current density.
 Low driving power.
 Excellent forward and reverse breakdown capabilities.
Disadvantages
 witching speed in between MOSFET and BJT.
 Possibility of latch-up due to internal PNPN thyristor structure.
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11. 7. Application of IGBT
Advantages:
 Low on-state voltage drop.
 Superior on-state current density.
 Low driving power.
 Excellent forward and reverse breakdown capabilities.
Disadvantages
 witching speed in between MOSFET and BJT.
 Possibility of latch-up due to internal PNPN thyristor structure.
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