comparing the characteristics of all power electronic devices

1. COMPARISION OF POWERCOMPARISION OF POWER
ELECTRONIC DEVICESELECTRONIC DEVICES
BYBY
SANGEETHA.VSANGEETHA.V

2. CONTENTS
• Classification of devices
• Structure
• Characteristics
• Safe operating area
• Advantages and Disadvantages
• Applications

3. CLASSIFICATION OF POWER ELECTRONICCLASSIFICATION OF POWER ELECTRONIC
DEVICES :DEVICES :
Uncontrollable Device:DiodeUncontrollable Device:Diode
Half-Controlled Device:ThyristorHalf-Controlled Device:Thyristor
Fully ControlledFully Controlled
Device:MOSFET,IGBT,GTODevice:MOSFET,IGBT,GTO

4. STRUCTURESTRUCTURE
DIODEDIODE BJTBJT

5. STRUCTURESTRUCTURE
MOSFETMOSFET
IGBTIGBT

6. STRUCTURESTRUCTURE
THYRISTOR GTO

7. STRUCTURESTRUCTURE
RCTRCT MCTMCT

8. CHARACTERISTICSCHARACTERISTICS
BJTBJTDIODEDIODE

9. CHARACTERISTICSCHARACTERISTICS
MOSFETMOSFET IGBTIGBT

10. CHARACTERISTICSCHARACTERISTICS
THYRISTORTHYRISTOR
Reverse
breakdo
wn
voltage
Holding
current
Reverse
leakage
current
Latching
current
Forward volt-drop
(conducting)
Forward
break-over
voltage
Forward
leakage
current
Gate
triggere
d
I
H
IL
VB
O
VA
K
IT

11. CHARACTERISTICSCHARACTERISTICS
MCTMCT

12. SAFE OPERATING AREASSAFE OPERATING AREAS
Forward BiasForward Bias Reverse BiasReverse Bias
BJT:

13. SAFE OPERATING AREASSAFE OPERATING AREAS
MOSFET:MOSFET:
• Three factorsThree factors
detemine the SOA ofdetemine the SOA of
the MOSFET:maximumthe MOSFET:maximum
drain current (Idrain current (IDMDM)),,
internal junctioninternal junction
temperature (Tj) andtemperature (Tj) and
the breakdown voltage.the breakdown voltage.

14. IGBT:
Safe operating
area (SOA) is defined as
the voltage and current
conditions over which
the device can be
expected to operate
without self-damage.
SAFE OPERATING AREASSAFE OPERATING AREAS
IGBTIGBT

15. • GTO:

16. SAFE OPERATING AREASSAFE OPERATING AREAS
MCT:MCT:
• Safe Operating Area is limitedSafe Operating Area is limited
by the maximum controllableby the maximum controllable
anode current , maximum poweranode current , maximum power
dissipation and temperature.dissipation and temperature.
• As the anode-cathode voltageAs the anode-cathode voltage
increases,maximum currentincreases,maximum current
starts decreasing due to powerstarts decreasing due to power
dissipation and internal devicedissipation and internal device
avalanche mechanism.avalanche mechanism.
• Since the 50A is large enough ,Since the 50A is large enough ,
the snubber less operation isthe snubber less operation is
possible.possible.

17. ADVANTAGES
Diode:
• No filament is necessary.
• Occupies lesser space.
• Long life.
BJT:
• Low cost than any other semiconductor transistors.
• Less complexity in fabrication.
• It is a simple process.

18. • MOSFET:
• Mosfet are small compare to bjt's so it fabricated
easily and space saving scheme on the ic's
• Mosfet's input impedance are very high so they do
not load the circuits. So loading effect doesn't arise.
• Operating frequency is very high so may be used at
higher frequencies.
• Used in digital circuits for it's reliability.
• Effect of noise is less than bjt. so high signal to
noise ratio.
• Mosfets are unipolar devices so reverse saturation
current doesn't exist.
• It consume less D.C power rather than BJT.

19. IGBT:
• It has a very low on-state voltage drop due to
conductivity modulation and has superior on-state
current density. So smaller chip size is possible and
thus cost can be reduced
• Low driving power and a simple drive circuit due to the
input MOS gate structure; it can be easily controlled
as compared to current-controlled devices
(thyristors , BJTs) in high voltage and high current
applications

20. THYRISTOR:
• Simple turn on device
• low cost
• High voltage and current capability.
GTO:
• Low conduction losses.
• Low cost.

21. MCT:
• Low forward conduction drop.
• Fast turn on and turn off time.
• Low switching losses
• High gate input impedance.
RCT:
These devices are advantageous where a reverse or
freewheel diode must be used. Because the SCR and
diode never conduct at the same time they do not
produce heat simultaneously and can easily be integrated
and cooled together.

22. APPLICATIONSAPPLICATIONS
DIODE:DIODE:
• As rectifier to convert Ac into Dc.As rectifier to convert Ac into Dc.
• As an switch in computer circuits.As an switch in computer circuits.
• As detectors in radios to detect audio signals.As detectors in radios to detect audio signals.
• As LED to emit different colours.As LED to emit different colours.
BJT:BJT:
• It is used as a switch.It is used as a switch.
• It is used as a amplifier.It is used as a amplifier.

23. APPLICATIONSAPPLICATIONS
MOSFETMOSFET
• Used in digital integrated circuits.Used in digital integrated circuits.
• Radio systems use MOSFETs as oscillator or mixersRadio systems use MOSFETs as oscillator or mixers
to convert frequencies.to convert frequencies.
• Used in audio frequency power amplifiers for publicUsed in audio frequency power amplifiers for public
address systems.address systems.
IGBTIGBT
• It is used in PWM,UPS,SMPS and other powerIt is used in PWM,UPS,SMPS and other power
electronic circuitselectronic circuits..
• It is used for medium power applications.It is used for medium power applications.

24. APPLICATIONSAPPLICATIONS
THYRISTOR:THYRISTOR:
• Mainly used where high currents and voltages areMainly used where high currents and voltages are
involved, and are often used to control alternatinginvolved, and are often used to control alternating
currents, where the change of polarity of the currentcurrents, where the change of polarity of the current
causes the device to switch off automatically; referredcauses the device to switch off automatically; referred
to as Zero Cross operation.to as Zero Cross operation.
• Thyristors can be used as the control elements for phaseThyristors can be used as the control elements for phase
angle triggered controllers, also known as phase firedangle triggered controllers, also known as phase fired
controllers.controllers.
GTO:GTO:
• HVDC Systems.HVDC Systems.
• Applications with low switching frequencies.Applications with low switching frequencies.

25. APPLICATIONSAPPLICATIONS
MCT:MCT:
• UPS.UPS.
• Static VAR regulators.Static VAR regulators.
• Harmonic compensators.Harmonic compensators.
• AC Motor Drives.AC Motor Drives.
RCT:RCT:
• RCT’s (reverse conducting Thyristors) is widely usedRCT’s (reverse conducting Thyristors) is widely used
for high speed switching especially in tractionfor high speed switching especially in traction
applications.applications.
• Reverse conducting thyristors are often used inReverse conducting thyristors are often used in
frequency changers and inverters.frequency changers and inverters.

26. THANK YOUTHANK YOU