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Toshiba MOSFETs
Silicon N-Channel MOS (DTMOS)
Applications
• Switching Voltage Regulators
Features
 Low drain-source on-resistance: RDS(ON) = 0.16 Ω
(typ.) by used to Super Junction Structure : DTMOS
 Easy to control Gate switching
 Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID
= 0.79 mA)
Packaging and Internal Circuit
D2PAK
Absolute Maximum Ratings
(Note) (Ta = 25C unless otherwise specified)
Absolute Maximum Ratings(note cont.)
 Using continuously under heavy loads (e.g. the application
of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings.
 Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook ("Handling
Precautions"/"Derating Concept and Methods") and
individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

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A Closer Look at D2PAK - Toshiba MOSFETs

  • 1. Toshiba MOSFETs Silicon N-Channel MOS (DTMOS) Applications • Switching Voltage Regulators
  • 2. Features  Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS  Easy to control Gate switching  Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA)
  • 3. Packaging and Internal Circuit D2PAK
  • 4. Absolute Maximum Ratings (Note) (Ta = 25C unless otherwise specified)
  • 5. Absolute Maximum Ratings(note cont.)  Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
  • 6. Thermal Characteristics Note: This transistor is sensitive to electrostatic discharge and should be handled with care.