Device Modeling Report for General Purpose Rectifier
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This document summarizes the modeling of a general purpose rectifier diode. It includes 3 key sections: 1) descriptions of the PSpice model parameters, 2) comparisons of simulated and measured forward current and capacitance characteristics showing good agreement, and 3) comparisons of simulated and measured reverse recovery times also showing close matches.
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Device Modeling Report for General Purpose Rectifier
- 1. Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER / PROFESSIONAL PART NUMBER: RURG8060 MANUFACTURER: INTERSIL REMARK: TC=110C Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 3. Forward Current Characteristic Reference All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 4. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit R1 0.01m V1 0Vdc U1 DRURG8060 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 5. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.1 0.388 0.391 -0.77 0.2 0.434 0.431 0.69 0.5 0.490 0.491 -0.20 1 0.538 0.538 0.00 2 0.592 0.590 0.34 5 0.678 0.677 0.15 10 0.770 0.770 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 6. Capacitance Characteristic Circuit Simulation Result Evaluation Circuit V2 0Vdc V2 = 600 V1 U1 V1 = 0 TD = 0 TR = 1us TF = 10ns PW = 5us PER = 10us DRURG8060 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 7. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0 1403.000 1403.000 0.00 0.1 1273.000 1274.900 -0.15 0.2 1146.000 1156.500 -0.92 0.5 915.880 937.959 -2.41 1 730.510 749.930 -2.66 2 557.290 572.269 -2.69 5 378.090 382.467 -1.16 10 279.300 276.124 1.14 20 212.240 202.441 4.62 50 149.960 145.067 3.26 100 112.290 107.253 4.49 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 8. Reverse Recovery Characteristic Circuit Simulation Result Evaluation Circuit R1 50 V2 = 10.5V V1 V1 = -9.55V U1 TD = 0 TR = 10ns TF = 10ns PW = 20us PER = 50us DRURG8060 0 Compare Measurement vs. Simulation Measurement Simulation %Error trj 132.0 ns 132.3 ns 0.227 trb 212.0 ns 213.5 ns 0.707 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 9. Reverse Recovery Characteristic Reference Measurement Trj =132(ns) Trb=212(ns) Conditions: Ifwd=Irev=0.2(A), Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2005