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All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
1 
Device Modeling Report 
Bee Technologies Inc. 
COMPONENTS: SiC Schottky Barrier Diode 
PART NUMBER: TRS6A65C 
MANUFACTURER: TOSHIBA 
REMARK: Professional Model
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
2 
Circuit Configuration 
DIODE MODEL PARAMETERS 
PSpice 
model 
parameter 
Model description 
IS Saturation Current 
N Emission Coefficient 
RS Series Resistance 
IKF High-injection Knee Current 
CJO Zero-bias Junction Capacitance 
M Junction Grading Coefficient 
VJ Junction Potential 
ISR Recombination Current Saturation Value 
BV Reverse Breakdown Voltage(a positive value) 
IBV Reverse Breakdown Current(a positive value) 
TT Transit Time 
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
3 
R1 
0.01m 
V1 
0Vdc 
0 
U1 
TRS6A65C 
V _ V 1 
0V 0.5V 1.0V 1.5V 2.0V 
I(R1) 
0A 
1.0A 
2.0A 
3.0A 
4.0A 
5.0A 
6.0A 
Forward Current Characteristics 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
4 
Comparison Graph Circuit Simulation result 
Comparison table 
IF (A) VF (V) %Error Measurement Simulation 0.5 0.950 0.954 0.42 1 1.020 1.016 -0.39 2 1.125 1.121 -0.36 4 1.310 1.313 0.23 6 1.500 1.498 -0.13
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
5 
V ( N 1 6 6 1 0 ) 
100mV 1.0V 10V 100V 1.0KV 
I(V2)/(650V/10u) 
10p 
100p 
1.0n 
0 
V1 
TD = 0 
TF = 500ns 
PW = 100us 
PER = 500us 
V1 = 0 
TR = 10us 
V2 = 650 
V2 
0Vdc 
U1 
TRS6A65C 
Junction Capacitance Characteristic 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
6 
Comparison Graph Circuit Simulation result 
Comparison table 
VR (V) Cj (pF) %Error Measurement Simulation 0.1 380.000 365.900 -3.71 1 315.000 317.300 0.73 2 275.000 278.300 1.20 5 220.000 209.900 -4.59 10 164.000 156.300 -4.70 20 117.000 112.100 -4.19 50 77.000 73.300 -4.81 100 54.000 56.140 3.96 200 44.000 45.800 4.09 500 38.000 38.6 1.58
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
7 
V _ V 1 
100V 200V 300V 400V 500V 600V 
I(R1) 
1.0nA 
10nA 
100nA 
1.0uA 
10uA 
U1 
TRS6A65C 
V1 
0Vdc 
R1 
100m 
0 
Reverse Characteristic 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
8 
Comparison Graph Circuit Simulation result 
Comparison table 
IR (nA) VR (V) %Error Measurement Simulation 10 510.000 507.570 -0.48 100 605.000 604.430 -0.09 300 650.000 649.140 -0.13

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SPICE MODEL of TRS6A65C (Professional Model) in SPICE PARK

  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: TRS6A65C MANUFACTURER: TOSHIBA REMARK: Professional Model
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R1 0.01m V1 0Vdc 0 U1 TRS6A65C V _ V 1 0V 0.5V 1.0V 1.5V 2.0V I(R1) 0A 1.0A 2.0A 3.0A 4.0A 5.0A 6.0A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.5 0.950 0.954 0.42 1 1.020 1.016 -0.39 2 1.125 1.121 -0.36 4 1.310 1.313 0.23 6 1.500 1.498 -0.13
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V ( N 1 6 6 1 0 ) 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/10u) 10p 100p 1.0n 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 10us V2 = 650 V2 0Vdc U1 TRS6A65C Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR (V) Cj (pF) %Error Measurement Simulation 0.1 380.000 365.900 -3.71 1 315.000 317.300 0.73 2 275.000 278.300 1.20 5 220.000 209.900 -4.59 10 164.000 156.300 -4.70 20 117.000 112.100 -4.19 50 77.000 73.300 -4.81 100 54.000 56.140 3.96 200 44.000 45.800 4.09 500 38.000 38.6 1.58
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V _ V 1 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA U1 TRS6A65C V1 0Vdc R1 100m 0 Reverse Characteristic Circuit Simulation result Evaluation circuit
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (nA) VR (V) %Error Measurement Simulation 10 510.000 507.570 -0.48 100 605.000 604.430 -0.09 300 650.000 649.140 -0.13