Device Modeling Report



COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER/ STANDARD
PART NUMBER: 11EQS10
MANUFACTURER: NIEC




               Bee Technologies Inc.


  All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                  Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




          All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic

Circuit Simulation Result




Evaluation Circuit


                     R1


                     0.001m
                                   D1

          V1
   0Vdc


                              11EQS10


                          0




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph

Circuit Simulation Result




Simulation Result

                              Vfwd(V)            Vfwd(V)
           Ifwd(A)                                                    %Error
                            Measurement         Simulation
                     0.3           0.710               0.720                   1.41
                     0.5           0.758               0.766                   1.06
                       1           0.844               0.829                  -1.78
                       2           0.944               0.926                  -1.91
                       4           1.040               1.030                  -0.96




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic

Circuit Simulation Result




Evaluation Circuit

                         V2


   V2 = 100                       0Vdc
   V1 = 0
   TD = 0                                   D1
   TR = 10ns    V1
   TF = 50ns
   PW = 5us
   PER = 10us
                                  11EQS10



                              0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph

Circuit Simulation Result




Simulation Result

                               Cj(pF)             Cj(pF)
          Vrev(V)                                                     %Error
                            Measurement         Simulation
                      1            69.500             69.444                  -0.08
                      2            53.200             53.000                  -0.38
                      3            44.700             45.500                   1.79
                      5            35.700             36.200                   1.40
                      7            30.500             31.400                   2.95
                     10            26.300             26.400                   0.38
                     20            19.500             19.300                  -1.03
                     30             16.50              16.10                  -2.42
                     50             12.90              12.60                  -2.33
                     70             11.40              10.90                  -4.39
                    100               9.52               9.20                 -3.36




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

SPICE MODEL of 11EQS10 (Standard Model) in SPICE PARK

  • 1.
    Device Modeling Report COMPONENTS: DIODE/SCHOOTTKY RECTIFIER/ STANDARD PART NUMBER: 11EQS10 MANUFACTURER: NIEC Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2.
    PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3.
    Forward Current Characteristic CircuitSimulation Result Evaluation Circuit R1 0.001m D1 V1 0Vdc 11EQS10 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4.
    Comparison Graph Circuit SimulationResult Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.3 0.710 0.720 1.41 0.5 0.758 0.766 1.06 1 0.844 0.829 -1.78 2 0.944 0.926 -1.91 4 1.040 1.030 -0.96 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5.
    Junction Capacitance Characteristic CircuitSimulation Result Evaluation Circuit V2 V2 = 100 0Vdc V1 = 0 TD = 0 D1 TR = 10ns V1 TF = 50ns PW = 5us PER = 10us 11EQS10 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6.
    Comparison Graph Circuit SimulationResult Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 1 69.500 69.444 -0.08 2 53.200 53.000 -0.38 3 44.700 45.500 1.79 5 35.700 36.200 1.40 7 30.500 31.400 2.95 10 26.300 26.400 0.38 20 19.500 19.300 -1.03 30 16.50 16.10 -2.42 50 12.90 12.60 -2.33 70 11.40 10.90 -4.39 100 9.52 9.20 -3.36 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004