How ion beam modifies thin films surface of a binary compound has been shown here.

2. Pristine roughness σ = 5.35 nm

3. 500 eV
(a)
Z=13 nm
700 eV
(b)
Z=8 nm
1000 eV
(c)
Z=20 nm
1200 eV
(d)
Z=24 nm

4. (a)
(a)

5. T=100 T=250
(e) (f)
600 800 1000 1200
0.00
0.01
0.02
0.03
0.04
Aspect
ratio
(A/L)
Energy (eV)
1
2
3
4
5
Roughness
(nm)
As grown 5 nm

6. 400 500 600 700 800 900 1000 1100 1200 1300
10
20
30
40
600
800
1000
Wavelength
(nm)
Energy (eV)
Exptl.
Theor.
0
20
40
600
800
1000
Wavelength
(nm)
600 800 1000 1200
1
2
3
4
5
Amplitude
(nm)
Energy (eV)
600 800 1000 1200
0.00
0.01
0.02
0.03
0.04
Aspect
ratio
(A/L)
Energy (eV)
1
2
3
4
5
Roughness
(nm)
As grown 5 nm
(a)
(d)
(c)
(b)
T=100 T=250
(e) (f)
Pristine Rq=5.35 nm

7. 10
7
10
8
10
9
10
-30
10
-29
10
-28
10
-27
10
-26
PSD(nm
4
)
k(m
-1
)
15 min
30 min
45 min
60 min
0
20
40
600
800
1000
Wavelength
(nm)
1
2
3
4
5
Amplitude
(nm)
2.5×1018 cm-2
(a)
Z=6 nm
5.0×1018 cm-2
(b)
Z=5.5 nm
7.5×1018 cm-2
(c)
Z=7 nm
1.0×1019 cm-2
(d)
Z=8.9 nm

8. T=100 T=250
(g)
2.0x10
18
4.0x10
18
6.0x10
18
8.0x10
18
1.0x10
19
42
44
46
48
50
f
0.123
Wavelength
(nm)
Fluence (ions/cm
2
)
Expt.
Power law fit
2.0x10
18
4.0x10
18
6.0x10
18
8.0x10
18
1.0x10
19
0.8
0.9
1.0
1.1
1.2
1.3 Expt.
Exponential fit
Roughness
(nm)
B
(a) (b)
(d)
(c)
(e) (f)
0 20000 40000 60000 80000 100000
0
20
40
60
80
100
120
140
160
180
wavelength
wavelength
(nm)
time (a.u)
2.0x10
18
4.0x10
18
6.0x10
18
8.0x10
18
1.0x10
19
42
44
46
48
50
f
0.123
Wavelength
(nm)
Fluence (ions/cm
2
)
Expt.
Power law fit

9. 2.0x10
18
4.0x10
18
6.0x10
18
8.0x10
18
1.0x10
19
42
44
46
48
50
f
0.123
Wavelength
(nm)
Fluence (ions/cm
2
)
Expt.
Power law fit
2.0x10
18
4.0x10
18
6.0x10
18
8.0x10
18
1.0x10
19
0.8
0.9
1.0
1.1
1.2
1.3 Expt.
Exponential fit
Roughness
(nm)
Fluence (ions/cm
2
)
(a) (b)
2.0x10
18
4.0x10
18
6.0x10
18
8.0x10
18
1.0x10
19
42
44
46
48
50
d
0.123
Wavelength
(nm)
ion dose (ions/cm
2
)
Expt.
Power law fit
2.0x10
18
4.0x10
18
6.0x10
18
8.0x10
18
1.0x10
19
0.8
0.9
1.0
1.1
1.2
1.3 Expt.
Exponential fit
Roughness
(nm)
ion dose (ions/cm
2
)
(a) (b)
0
20
40
600
800
1000
Wavelength
(nm)
0
20
40
600
800
1000
Wavelength
(nm)
Expt
600 800 1000 1200
1
2
3
4
5
Amplitude
(nm)
Energy (eV)
600 800 1000 1200
0.00
0.01
0.02
0.03
0.04
Aspect
ratio
(A/L)
Energy (eV)
1
2
3
4
5
Roughness
(nm)
(a)
(d)
(c)
(b)
As grown
100 150 200 250 300 350 400
-4
-3
-2
-1
0
1
2
3
z
(nm)
X (nm)

10. 0 100 200 300 400 500 600
-2
-1
0
1
2
3
4
5
Height
(nm)
Length (nm)
(d)
0.2 0.4 0.6 0.8 1.0 1.2
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
Linear fit
Roughness
(nm)
Co/Si (Composition)
(e)
(a)
(e)
(d)
(b)
(c)

11. 500 600 700 800 900 1000 1100 1200
0
5
10
15
20
25
50
51
52
53
54
55
Distorted Ripples
Pill bug structures
Semi-ellipsoidal structures
Self-organized ripples
Co
(%)
Energy (eV)
27% Co
53% Co
Topography MFM

12. 495 800 1000 1200
0
200
400
600
800
1000 Linear Fit
Wavelength
(nm)
Energy (eV)
450 600 750 900 1050 1200
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Roughness
(nm)
Energy (eV)
400 600 800 1000 1200
0.00
0.01
0.02
0.03
0.04 Linear Fit
Aspect
ratio
(A/L)
Energy (eV)
0 100 200 300 400 500 600
-2
-1
0
1
2
3
4
5
Height
(nm)
Length (nm)
(d)
0.2 0.4 0.6 0.8 1.0 1.2
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
Linear fit
Roughness
(nm)
Co/Si (Composition)
(e)
Si
CoxSi1-x
600 800 1000 1200
0.00
0.01
0.02
0.03
0.04
Aspect
ratio
(A/L)
Energy (eV)
1
2
3
4
5
Roughness
(nm)
(a)
(d)
(c)
(b)
As grown 5 nm
0
20
40
600
800
1000
Wavelength
(nm)
Expt
600 800 1000 1200
1
2
3
4
5
Amplitude
(nm)
Energy (eV)
0 100 200 300 400 500 600
-7.5
-5.0
-2.5
0.0
2.5
5.0
Z
(nm)
X (nm)
Line profile for sample
bombarded at 500 eV

13. 0
20
40
600
800
1000
Wavelength
(nm)
Theory
Expt.
600 800 1000 1200
1
2
3
4
5
Amplitude
(nm)
Energy (eV)

14. 2.0x10
18
4.0x10
18
6.0x10
18
8.0x10
18
1.0x10
19
42
44
46
48
50
f
0.123
Wavelength
(nm)
Fluence (ions/cm
2
)
Expt.
Power law fit
2.0x10
18
4.0x10
18
6.0x10
18
8.0x10
18
1.0x10
19
0.8
0.9
1.0
1.1
1.2
1.3 Expt.
Exponential fit
Roughness
(nm)
Fluence (ions/cm
2
)
(a) (b)
(c)
Z=30nm

15. 2.0x10
18
4.0x10
18
6.0x10
18
8.0x10
18
1.0x10
19
42
44
46
48
50
f
0.123
Wavelength
(nm)
Fluence (ions/cm
2
)
Expt.
Power law fit
2.0x10
18
4.0x10
18
6.0x10
18
8.0x10
18
1.0x10
19
0.8
0.9
1.0
1.1
1.2
1.3 Expt.
Exponential fit
Roughness
(nm)
Fluence (ions/cm
2
)
(a) (b)
(c)
Z=30nm

16. Z
Y
X
x
y
𝛉
𝛟
ions
0
20
40
600
800
1000
Wavelength
(nm)
Expt
600 800 1000 1200
1
2
3
4
5
Amplitude
(nm)
Energy (eV)
0 100 200 300 400 500 600
-7.5
-5.0
-2.5
0.0
2.5
5.0
Z
(nm)
X (nm)
500 eV
(a)
Z=13 nm
700 eV
(b)
Z=8 nm
1000 eV
(c)
Z=20 nm
1200 eV
(d)
Z=24 nm
Si
CoxSi1-x