Original N-Channel Mosfet 2SK3047 K3047 3047 2A 800V TO-220F New Panasonic

1. 1
Power F-MOS FETs
unit: mm
2SK3047
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 15mJ
q VGSS = ±30V guaranteed
q High-speed switching: tf = 25ns
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Electrical Characteristics (TC = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
| Yfs |
VDSF
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
VDS = 640V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 1A
VDS = 25V, ID = 1A
IDR = 2A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 1A
VDD = 200V, RL = 200Ω
min
800
2
0.7
typ
4.8
1.1
350
60
25
15
20
60
25
max
0.1
±1
5
7
−1.3
Unit
mA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
TC = 25°C
Ta = 25°C
Symbol
VDSS
VGSS
ID
IDP
EAS*
PD
Tch
Tstg
Ratings
800
±30
±2
±4
15
30
2
150
−55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
* L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse
1
9.9±0.3
15.0±0.513.7±0.2
4.2±0.2
4.6±0.2
2.9±0.2
0.8±0.1
1.4±0.2
2 3
φ3.2±0.1
2.6±0.1
0.55±0.15
2.54±0.3
5.08±0.5
3.0±0.5
1.6±0.2
1: Gate
2: Drain
3: Source
TO-220D Package

2. 2
Power F-MOS FETs 2SK3047
Area of safe operation (ASO) PD  Ta EAS  Tj
ID  VDS ID  VGS Vth  TC
RDS(on)  ID | Yfs |  ID Ciss, Coss, Crss  VDS
1 10 100 10003 30 300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
TC=25˚C
t =10µs
100µs
DC
1ms
10ms
100ms
Drain to source voltage VDS
(V)
DraincurrentID
(A)
0 16040 12080 14020 10060
0
60
50
40
30
20
10
(1) TC=Ta
(2) Without heat sink
(1)
(2)
Ambient temperature Ta (˚C)
AllowablepowerdissipationPD
(W)
25 50 75 100 125 150 175
0
5
10
15
20
25
30
VDD=50V
ID=2A
Junction temperature Tj
(˚C)
AvalancheenergycapacityEAS(mJ)
0 10 20 30 40 50 60
0
1
2
3
4
VGS=15V
10V
6V
7V
5.5V
6.5V
5V
TC=25˚C
Drain to source voltage VDS
(V)
DraincurrentID
(A)
0 121082 64
0
1
2
3
4
5
TC=0˚C
25˚C
100˚C
125˚C
VDS=25V
Gate to source voltage VGS
(V)
DraincurrentID
(A)
0 25 50 75 100 125 150
0
1
2
3
4
5
6
VDS=25V
ID=1mA
Case temperature TC
(˚C)
GatethresholdvoltageVth
(V)
0 1 2 3 4 5
0
12
10
8
6
4
2
VGS=10V
15V
Drain current ID
(A)
DraintosourceON-resistanceRDS(on)
(Ω)
30 1 2 4
0
0.5
1.0
1.5
2.0
VDS=25V
TC=25˚C
Drain current ID
(A)
Forwardtransferadmittance|Yfs|(S)
0 50 100 150 200
1
10
100
1000
10000
Ciss
Coss
Crss
f=1MHz
TC=25˚C
Drain to source voltage VDS
(V)
Inputcapacitance(Commonsource),Outputcapacitance(Commonsource),
Reversetransfercapacitance(Commonsource)Ciss,Coss,Crss
(pF)

3. 3
Power F-MOS FETs 2SK3047
VDS, VGS  Qg td(on), tr, tf, td(off)  ID
Rth(t)  t
10–4 1010–3 10–110–2 1 103102 104
10–2
10–1
1
10
102
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
Time t (s)
ThermalresistanceRth(t)(˚C/W)
0 4 8 12 16 20 24
0
100
200
300
400
500
600
700
800
0
4
8
12
16
2
6
10
14
VGSVDS
ID=2A
TC=25˚C
GatetosourcevoltageVGS
(V)
Gate charge amount Qg
(nC)
DraintosourcevoltageVDS
(V)
0 0.5 1.0 1.5 2.0 2.5
0
20
40
60
80
100
120
td(off)
tf
tr
td(on)
VDD=200V
VGS=10V
TC=25˚C
Drain current ID
(A)
Switchingtimetd(on),tr,tf,td(off)
(ns)