High-k für Alle - Beyond DRAM capacitors and HKMG

1. © Fraunhofer
Beyond DRAM capacitors and HKMG
J. Sundqvist, W. Weinreich, J. Müller, A.
Naumann, S. Riedel, P. Polakowski, M. Drescher,
K. Seidel, M. Czernohorsky, V. Beyer
Fraunhofer Institute for Photonic Microsystems
Business Unit Center Nanoelectronic Technologies Dresden (IPMS-CNT)
HIGH-K FÜR ALLE!
Achtung!
High-k Material
Fraunhofer IPMS-CNT Dresden
www.cnt.fraunhofer.de

2. © Fraunhofer
Outline
 Introduction – High-k for semicondcutor applications
 First High-k by ALD
 Introduction of High-k MIM Capacitors
 Memory and Logic devices
 High-k devices Fraunhofer CNT
 High-k Devices Group
 Integrated MIM Capacitors for SoC / SiP
 Ferroelectric High-k for FeFET / FRAM
- CNT confidential -

3. © Fraunhofer
First High-k on a silicon surface by ALD 1969
Join ALD History: www.aldpulse.com/node/189

4. © Fraunhofer
 Sven Lindfors (left)
Constructing ALD R&D and production tools since 1975
(Lohja Oy, Mikrokemia Oy, ASM Microchemistry Ltd.,
Picosun, …)
 Dr. Tuomo Suntola (right) Demonstrated ALD 1974 at
Instrumentarium Oy, Finland Patented ALD (ALE) 1977 T.
Suntola, "Methods for producing compound thin films", US patent
4058430
ALD / ML – Historical background / Hall of fame
 Prof. V.B. Aleskovskii (left) Proposed the
concept of the Matrix Theory in his Ph.D.
thesis published in 1952 [under
investigation].
 Prof. S.I. Kol’tsov (right) First publications
as Molecular Layering (ML) in the 1960s from
Leningrad Technological Institute.
Join ALD History: www.aldpulse.com/node/189

5. © Fraunhofer
First application of High-k MIM capacitor 1992
SEMICON Europa 1999 Thin-Film Capacitors with Tantalum-Hafnium Oxide Nanolaminate Insulator
H. Kattelus and H. Ronkainen, VTT Electronics, Finland
T. Kanniainen and J. Skarp, Microchemistry Ltd., Finland
Patented in Finland 1992 - Insulation in the form of a layer with high
permittivity and method for the manufacture thereof
Join ALD History: www.aldpulse.com/node/189

6. © Fraunhofer
First application of High-k MIM capacitor 1992
1992 : Insulation in the form of a layer with high permittivity and method for the manufacture
thereof
The invention concerns an insulation comprising laminate construction 3
containing metal oxide and a method for the manufacture thereof. The laminate
construction 3 according to the invention contains a metal oxide in at least two
different tungsten groups, of which the first metal oxide has high
permittivity and the second metal oxide has low stray flux . Both the metal
oxides are at least essentially in amorphous form. Tantaloxide is
advantageously used as the first metal oxide and hafnium oxide as the second
metal oxide. According to the invention a film is achieved with high permittivity
and low losses in low manufacturing temperatures, for example 300 degrees
C, and treatment with after-heating is not required. The quality factor Q =
[omega] C/G of the insulation is better than 500 and the dielectric constant is
advantageously at least 15.; The layer of insulation can advantageously be
used in thin film condensers, for example.
Join ALD History: www.aldpulse.com/node/189
SEMICON Europa 1999 Thin-Film Capacitors with Tantalum-Hafnium Oxide Nanolaminate Insulator
H. Kattelus and H. Ronkainen, VTT Electronics, Finland
T. Kanniainen and J. Skarp, Microchemistry Ltd., Finland

7. © Fraunhofer
First application of High-k MIM capacitor 1992
1992 : Insulation in the form of a layer with high permittivity and method for the manufacture
thereof
laminate construction
the first metal oxide has high permittivity and
the second metal oxide has low stray flux .
amorphous form.
Tantaloxide
hafnium oxide
low manufacturing temperatures
dielectric constant is advantageously at least
15.
Join ALD History: www.aldpulse.com/node/189
SEMICON Europa 1999 Thin-Film Capacitors with Tantalum-Hafnium Oxide Nanolaminate Insulator
H. Kattelus and H. Ronkainen, VTT Electronics, Finland
T. Kanniainen and J. Skarp, Microchemistry Ltd., Finland

8. © Fraunhofer
High-k for Logic and Memory Applications
FEOL HKMG Technologies
3D MIM Capacitor
Replacement Gate, High-k First, FinFET
Memory
Samsung
Stacked DRAM MIS
90 nm 2004
Intel 45 nm 2007
Al2O3 
Infineon
DT DRAM
70 nm 2005
AMD 32nm
2011
Intel 22nm 2011
STMicroelectronics 2003
TiN / Ta2O5 / TiN

9. © Fraunhofer
High-k Devices : Integrated as System on Chip (SoC)
Transistor Technology: Planar, FinFET, FDSOI, …
Embedded
Memory:
DRAM
RRAM
FRAM
FeFET
Integrated Passives : Decoupling Capacitors

10. © Fraunhofer
High-k for : eDRAM – Back End Via Technology
STMicroelectronics, Renesas, Intel
Renesas' capacitor in porous low-k
(CAPL) eliminates W bypass contacts
for reduced eDRAM delay
(IEDM2010)
Intel’s new embedded DRAM
technology as presented at VLSI
2013 ads 128 MB Cache
“A 22nm High Performance
Embedded DRAM SoC
Technology Featuring Tri-Gate
Transistors and MIMCAP COB”

11. © Fraunhofer
High-k for : eDRAM – Front End Deep Trench Technology
■ The embedded deep trench DRAM. IBM has a long history in the field
and they have now brought it to the point where access time is shorter
than SRAM
■ The trench capacitors are also used as decoupling capacitors
ASMC 2012 http://electroiq.com/chipworks_real_chips_blog/author/insights-from-leading-edge/
eDRAM Decoupling Capacitors

12. © Fraunhofer
High-k for: RRAM in high-density crossbar arrays
Imec reported “smallest fully-functional HfO2-
based Resistive RAM cell”
10-nm by 10-nm at IEDM 2011/2012 (www.imec.be)
Samsung Advanced
Institute of
Technology and
Sejong University
published a RRAM cell
using asymmetric
Ta2O5−x/TaO2−x bilayer
structures
Myoung-Jae Lee et al, A fast, high-endurance and scalable non-volatile
memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Nature Materials 10, 625–630 (2011)

13. © Fraunhofer
High-k for: RRAM a promising alternative to EEPROM
and Flash in embedded applications*
The basic resistance switching memory cell in RRAM
consists of an insulating or semiconducting material
sandwiched between two highly conductive
electrodes like a MIM (metal-insulator-metal)
structure.
Resistive switching property has been observed in
most of the transition metal oxide materials:
*Says Harry Luan, CTO
Kilopass Technology Inc.
 TiOx, VOx, NiOx, CuOx, ZnOx, ZrOx, HfOx, TaOx, WOx, and SrTiOx.
 Even the prevalent SiOx can be set and reset into substantially different
resistance states.
 It is this readily available material in standard CMOS fabs that makes
RRAM particularly attractive for embedded NVM applications.
 RRAM provides a promising alternative to EEPROM and Flash in
embedded applications especially at process geometries of 28nm and
below.

14. © Fraunhofer
Applications of High-K Materials at Fraunhofer CNT
Transistor TechnologyFerroelectric Memory
FeFET/FRAM
Integrated Capacitors
System in Package (SiP)
System on Chip (SoC)
Advanced CMOS
Source : GF
Metal
High-
k
Si

15. © Fraunhofer
High-k dielectrics Research & Development
3D High-k
Material and Process Development
Electrical Characterization
Reliability and Test
Technology Integration

16. © Fraunhofer
FHR ALD 300®
Jusung EUREKA®
ASM Pulsar 3000®
External Lab
Process transfer
ALD Experts
ASM A412®
High-k dielectrics Precursor & Process Development

17. © Fraunhofer
Applications of High-K Materials at Fraunhofer CNT
Integrated Capacitors
System in Package (SiP)
System on Chip (SoC)
2D / 3D Test chip on 300mm
W. Weinreich et al - International Conference on Semiconductors Dresden-Grenoble 2013, Dresden

18. © Fraunhofer
Applications of High-K Materials at Fraunhofer CNT
Integrated Capacitors
System in Package (SiP)
System on Chip (SoC)
W. Weinreich et al - International Conference on Semiconductors Dresden-Grenoble 2013, Dresden

19. © Fraunhofer
Applications of High-K Materials at Fraunhofer CNT
Integrated Capacitors
System in Package (SiP)
System on Chip (SoC) Demonstrator module
4 mm² with~80 million trenches
CD/Pitch variation
Planar vs. 3D benchmark
W. Weinreich et al - International Conference on Semiconductors Dresden-Grenoble 2013, Dresden

20. © Fraunhofer
Applications of High-K Materials at Fraunhofer CNT
Integrated Capacitors
System in Package (SiP)
System on Chip (SoC)
-4 -3 -2 -1 0 1 2 3 4
1E-10
1E-9
1E-8
1E-7
1E-6 AR 13:1
AR 15:1
AR 20:1
4mm² Demo AR20:1
J(A/µF)
Bias (V)
W. Weinreich et al - International Conference on Semiconductors Dresden-Grenoble 2013, Dresden

21. © Fraunhofer
Applications of High-K Materials at Fraunhofer CNT
Integrated Capacitors
System in Package (SiP)
System on Chip (SoC) Demonstrator module
4 mm² with~80 million trenches
CD/Pitch variation
Planar vs. 3D benchmark
W. Weinreich et al - International Conference on Semiconductors Dresden-Grenoble 2013, Dresden

22. © Fraunhofer
Applications of High-K Materials at Fraunhofer CNT
Integrated Capacitors
System in Package (SiP)
System on Chip (SoC)
• 100 nF/mm2
• Reliability pass for
10 years (3.5V)
W. Weinreich et al - International Conference on Semiconductors Dresden-Grenoble 2013, Dresden

23. © Fraunhofer
Applications of High-K Materials at Fraunhofer CNT
Integrated Capacitors
System in Package (SiP)
System on Chip (SoC)
 Optimized electrical properties of planar
capacitors by reduced deposition
temperature for top electrode
 Overall thermal budget BEoL compatible
 Capacitor can be integrated both as SiP or
SoC system
 220 nF/mm2 capacitors for buffer application
with operation voltage of 3.5 V by 3D
structures and high-k dielectrics
 10 years reliability pass at continuous 3.5 V
 Possible scaling towards >1µF/mm² and for
various voltage ranges
 Process module available as demonstrator
and for loop lots
W. Weinreich et al - International Conference on Semiconductors Dresden-Grenoble 2013, Dresden

24. © Fraunhofer
Applications of High-K Materials at Fraunhofer CNT
Ferroelectric Memory
FeFET/FRAM
 Perovskite based
ferroelectrics (PZT or
SBT) has fundamental
shortcomings.
 Unlike the current-based
STT-MRAM, RRAM,
PCRAM and Flash
technologies the
ferroelectric approach is
based on a field effect
and consumes the lowest
power during switching.
 Scalability and
manufacturability on
the other hand still
remain a major issue
when utilizing perovskite-
based ferroelectrics.
 The world´s most
aggressively scaled
FeFETs
 Using a CMOS
compatable ferroelectric
Si:HfO2
 In a 28 nm HKMG stack
TiN/Si:HfO2/SiO2/Si

25. © Fraunhofer
Applications of High-K Materials at Fraunhofer CNT
Ferroelectric Memory
FeFET/FRAM
 The world´s most
aggressively scaled
FeFETs
 Using a CMOS
compatable ferroelectric
Si:HfO2
 In a 28 nm HKMG stack
TiN/Si:HfO2/SiO2/Si

26. © Fraunhofer
Thank You!
Funding :
14

27. © Fraunhofer
“Open Intro of the Virtual project on the history of ALD” by Riikka Puurunen in SlideShare 14.9.2013
Virtual Project on the History of ALD:
Introduction
• GOAL: generate a common view on the early evolution of ALD in a
collaborative project by the whole ALD community
• UNKNOWNS: ALD done under the name Molecular Layering (ML)
made in the Soviet Union starting from 1960’s
• INVITATION TO PARTICIPATE: www.aldpulse.com/node/189,
signed by Riikka L. Puurunen VTT, Aziz Abdulagatov NIST, Jonas Sundqvist
Fraunhofer IPMS-CNT, Annina Titoff aldpulse.com
 Anyone welcome to join!
 Participation: read & comment on the significance of at least one
historical publication that interests you. You may also help
building a complete list of early publications, here.
 Different backgrounds of the participants beneficial
 Open for contributions until the end of 2013
 To be carried out in atmosphere of openness, respect and trust

28. © Fraunhofer
“Open Intro of the Virtual project on the history of ALD” by Riikka Puurunen in SlideShare 14.9.2013
How will the results be published?
• POSTER at the 12th Baltic ALD conference
• Helsinki, Finland, May 12-13, 2014, see
http://www.aldcoe.fi/bald2014/
• CONTENTS: Both the literature and the comments will be listed.
• AUTHORSHIP:
• Everyone, who contributed, will be an author
• 10 to 100 authors expected, and even more would be ok
• Author list will be alphabetical, on the basis of the last name, to
highlight that everyone’s contribution is of equal value
• POSTER also later at ALD 2014?
• If you want to discuss how to publish the results, please join the ALD
History subgroup in LinkedIn

29. © Fraunhofer
“Open Intro of the Virtual project on the history of ALD” by Riikka Puurunen in SlideShare 14.9.2013
Additional material related to the
“virtual project on the history of ALD”

30. © Fraunhofer
“Open Intro of the Virtual project on the history of ALD” by Riikka Puurunen in SlideShare 14.9.2013
Timeline:
• Public discussions in LinkedIn in the group “ALD – atomic layer deposition”
• “ What are the "Molecular layering" papers by Koltsov from "early 1960's"? “
• Private discussions from May 2013 on by Riikka Puurunen and Aziz Abdulagatov,
soon joined by Jonas Sundqvist and Annina Titoff
• Planning how to realize a world-wide open effort
• ALD History LinkedIn subgroup created June 20, 2013
• 35 members as of 14.9.2013
• ALD History Mendeley group opened June 25, 2013
• Introduction and Invitation to participate published July 25, 2013, link
• Announcement of the project at ALD 2013, San Diego, July 30, 2013
• SlideShare for use August 18, 2013 (ALD 2013 presentation, link)
• First Comment by a visitor in the Google file August 24, 2013
• Introduction slides uploaded for free use in SlideShare August 31, 2013, link
• Includes description of the publication plan for BALD 2014
• Announcement of the project at MME 2013, Helsinki, Sept 2, 2013
• Announcement of the project at EuroCVD-19, Varna, Sept 5, 2013

31. © Fraunhofer
“Open Intro of the Virtual project on the history of ALD” by Riikka Puurunen in SlideShare 14.9.2013
About the logo of the “virtual project”
• Logo has been designed by Riikka Puurunen (June 2013) for use in
the LinkedIn ALD History group as well as other communication
related to the virtual project
• The history of ALD is not black and white, but better described in
shades of grey; thus, the logo was made in shades of grey.
• With this virtual project, we are in practice (re-)writing the early
history of ALD on the ML works, so “history” is in a handwriting-type
font

32. © Fraunhofer
“Open Intro of the Virtual project on the history of ALD” by Riikka Puurunen in SlideShare 14.9.2013
About how to use this file
• This is a slide-formed introduction to the virtual project, to be kept
and updated in SlideShare at least during fall 2013.
• This is aimed for introducing the project in class, at conferences, …,
and can be used by anyone interested
• You may download a copy of the file and use it in the way you want
(e.g. remove the for-your-purpose unnecessary slides)
• If you see a need for change in the contents, please do not modify
the contents yourself, but leave a comment to the file in Slideshare in
the Comments section after this slide  we can make and upload an
improved version.
• When there is new significant info that should be made available in
this presentation, this slide set will be updated and re-loaded in
SlideShare
• Please consider the date indicated the “version number”