This document summarizes the specifications and simulation results for an operational amplifier component. It includes details on the part number, manufacturer, and spice model. Simulation results are provided for key metrics like output voltage swing, input offset voltage, voltage gain, unity gain frequency, common mode rejection ratio, and slew rate. Comparisons are made between simulated and measured values.
This document summarizes the specifications and simulation results for an operational amplifier component. It includes details on the part number, manufacturer, and spice model. Simulation results are provided for key metrics like output voltage swing, input offset voltage, voltage gain, unity gain frequency, common mode rejection ratio, and slew rate. Comparisons are made between simulated and measured values.
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This document summarizes the specifications and simulation results of an operational amplifier component. It includes the part number, manufacturer, output voltage swing, input bias current, input offset voltage, open loop gain, unity gain frequency, common mode rejection ratio, and output short circuit current. The document compares measurement values to simulation results for each specification and shows good agreement between the two.
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SPICE MODEL of TPC6005 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the simulation results of testing various characteristics of the LM211H voltage comparator component. It examines the comparator's BJT and diode models, output low voltage, response time, input offset voltage, gain characteristics, and input bias current through circuit simulations and comparison with measurement data. Simulation results show good agreement with measurements, with most error values below 1%.
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SPICE MODEL of TPCA8015-H (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the results of simulations and measurements of key parameters for a LM311M voltage comparator component. It includes summaries of the component's BJT and diode models, output and response times at various voltages, input offset voltage characteristics, voltage gain characteristics, and input bias currents. Charts show the simulation results alongside tables comparing the simulation and measurement values.
This document summarizes the specifications and simulation results of an operational amplifier component. It includes the part number, manufacturer, output voltage swing, input bias current, input offset voltage, open loop gain, unity gain frequency, common mode rejection ratio, and output short circuit current. The document compares measurement values to simulation results for each specification and shows good agreement between the two.
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SPICE MODEL of TC75S56FU in SPICE PARK
1. Device Modeling Report
COMPONENTS : VOLTAGE COMPARATOR (CMOS)
PART NUMBER : TC75S56FU
MANUFACTURER : TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
2. MODEL PARAMETER
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
3. Output Low Voltage
Simulation result
Simulation
Evaluation Circuit
VDD VOUT
Vol
U1
- +
tc75s56f
VIN- VSS VIN+
V2 I1
5
5m
V1
1
0
Comparison Table
Isink=5mA Measurement Simulation %Error
Vol (V) 0.1 0.097569 -2.431
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
4. Output high Voltage
Simulation result
Simulation
Evaluation Circuit
VDD VOUT
Voh
U2
- +
tc75s56f
V5 I2
5 VIN- VSS VIN+
5m
V6
1
0
Comparison Table
Isource = 5mA Measurement Simulation %Error
VOH (V) 4.9 4.8899 -0.206
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
5. Output Sink Current
Simulation result
Simulation
Evaluation Circuit
VDD VOUT
U3
tc75s56f
- +
Vsink
VIN- VSS VIN+ 0.5
5 V3
V4
1
0
Comparison Table
VOL = 0.5 V Measurement Simulation %Error
Isink (mA) 25 24.371 -2.516
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
6. Output Source Current
Simulation result
Simulation
Evaluation Circuit
VDD VOUT
U4
tc75s56f
Vsource
- +
V7
VIN- VSS VIN+ 4.5
V8
5 1
0
Comparison Table
VOH = 4.5 V Measurement Simulation %Error
Isource (mA) 21 21.625 2.976
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
7. Propagation Delay Time and Response Time
Simulation result
Simulation
Evaluation Circuit
VDD VOUT
OUTPUT
U1
- +
tc75s56f
V1 VIN- VSS VIN+
5
V4
V2 V3 V1 = -100m
0 V2 = 100m
0 TD = 1u
TR = 10n
TF = 10n
PW = 5u
PER = 10u
0
Comparison Table
Over drive=100mV Measurement Simulation %Error
tPLH (ns) 680 663.805 -2.382
tPHL (ns) 250 247.4 -1.040
tr (ns) 60 59.462 -0.897
tf (ns) 8 7.9819 -0.226
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
8. Input Bias Current and Input Offset Current Characteristics
Simulation result
Ib
Ios
Evaluation Circuit
VDD VOUT
U1
- +
tc75s56f
V4 VIN- VSS VIN+
5 R1
1k
V2 V3 V1
0
0
0
0
Comparison Table
Measurement Simulation %Error
Ib (pA) 1 0.9979 -0.210
Ios(pA) 1 0.9980 -0.200
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
9. Input Offset Voltage Characteristics
Simulation result
Simulation
Evaluation Circuit
VDD VOUT
output
U1
- +
tc75s56f
VIN- VSS VIN+
V3
5
V1
0
0
Comparison Table
Measurement Simulation %Error
Vio(mV) 1 1.0495 4.95
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
10. Voltage Gain Characteristics
Simulation result
Simulation
Evaluation Circuit
OUTPUT
VDD VOUT
U1
- +
tc75s56f
V1 VIN- VSS VIN+
5
V2 VIN
0 V3
VOFF = 1.0495m
VAMPL = 0
FREQ = 0
AC = 1m
0
Comparison Table
Measurement Simulation %Error
Av (dB) 94 93.148 -0.906
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005