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Solar Energy (The Ultimate Renewable Resource)
Under the guidance of :- Presented by :-
Dr. IMRAN KHAN Name:- SHREYA SINHA
Dept. of (EE) Roll No:- 1705320904
AZAD TECHNICAL CAMPUS Course:- B.Tech ( EE) 3RD YEAR
LUCKNOW
Seminar
on
Solar Energy:
The Ultimate Renewable
Resource
What is Solar Energy?
 Originates with the
thermonuclear fusion
reactions occurring in the
sun.
 Represents the entire
electromagnetic radiation
(visible light, infrared,
ultraviolet, x-rays, and radio
waves).
 Radiant energy from the sun
has powered life on Earth for
many millions of years.
Advantages and Disadvantages
 Advantages
 All chemical and radioactive polluting byproducts of the
thermonuclear reactions remain behind on the sun, while only pure
radiant energy reaches the Earth.
 Energy reaching the earth is incredible. By one calculation, 30 days
of sunshine striking the Earth have the energy equivalent of the total
of all the planet’s fossil fuels, both used and unused!
 Disadvantages
 Sun does not shine consistently.
 Solar energy is a diffuse source. To harness it, we must concentrate it
into an amount and form that we can use, such as heat and electricity.
 Addressed by approaching the problem through:
1) collection, 2) conversion, 3) storage.
Solar Energy to Heat Living Spaces
 Proper design of a building is for it to act as a solar
collector and storage unit. This is achieved through
three elements: insulation, collection, and storage.
Solar Energy to Heat Water
 A flat-plate collector is used
to absorb the sun’s energy to
heat the water.
 The water circulates
throughout the closed system
due to convection currents.
 Tanks of hot water are used
as storage.
Photovoltaics
Photo+voltaic = convert light to electricity
Solar Cells Background
 1839 - French physicist A. E. Becquerel first recognized the photovoltaic
effect.
 1883 - first solar cell built, by Charles Fritts, coated semiconductor
selenium with an extremely thin layer of gold to form the junctions.
 1954 - Bell Laboratories, experimenting with semiconductors, accidentally
found that silicon doped with certain impurities was very sensitive to light.
Daryl Chapin, Calvin Fuller and Gerald Pearson, invented the first
practical device for converting sunlight into useful electrical power.
Resulted in the production of the first practical solar cells with a sunlight
energy conversion efficiency of around 6%.
 1958 - First spacecraft to use solar panels was US satellite Vanguard 1
http://en.wikipedia.org/wiki/Solar_cell
Driven by Space Applications in
Early Days
The heart of a photovoltaic system is a solid-state device called a
solar cell.
How does it work
Energy Band Formation in Solid
 Each isolated atom has discrete energy level, with two electrons of
opposite spin occupying a state.
 When atoms are brought into close contact, these energy levels split.
 If there are a large number of atoms, the discrete energy levels form a
“continuous” band.
Energy Band Diagram of a Conductor,
Semiconductor, and Insulator
a conductor a semiconductor an insulator
 Semiconductor is interest because their conductivity can be readily modulated
(by impurity doping or electrical potential), offering a pathway to control electronic
circuits.
Silicon
-
Si Si Si
Si
Si
Si
Si
Si
Si
Shared electrons
 Silicon is group IV element – with 4 electrons in their valence shell.
 When silicon atoms are brought together, each atom forms covalent
bond with 4 silicon atoms in a tetrahedron geometry.
Intrinsic Semiconductor
 At 0 ºK, each electron is in its lowest energy state
so each covalent bond position is filled. If a small
electric field is applied to the material, no electrons
will move because they are bound to their individual
atoms.
=> At 0 ºK, silicon is an insulator.
 As temperature increases, the valence electrons
gain thermal energy. If a valence electron gains
enough energy (Eg), it may break its covalent bond
and move away from its original position. This
electron is free to move within the crystal.
 Conductor Eg <0.1eV, many electrons can be
thermally excited at room temperature.
 Semiconductor Eg ~1eV, a few electrons can be
excited (e.g. 1/billion)
 Insulator, Eg >3-5eV, essentially no electron can
be thermally excited at room temperature.
Extrinsic Semiconductor, n-type Doping
Electron
-
Si Si Si
Si
Si
Si
Si
Si
As
Extra
Valence band, Ev
Eg = 1.1 eV
Conducting band, Ec
Ed ~ 0.05 eV
 Doping silicon lattice with group V elements can creates extra electrons
in the conduction band — negative charge carriers (n-type), As- donor.
 Doping concentration #/cm3 (1016/cm3 ~ 1/million).
Valence band, Ev
Eg = 1.1 eV
Conducting band, Ec
Ea ~ 0.05 eV
Electron
-
Si Si Si
Si
Si
Si
Si
Si
B
Hole
 Doping silicon with group III elements can creates empty holes in the
conduction band — positive charge carriers (p-type), B-(acceptor).
Extrinsic Semiconductor, p-type doping
V
I
R O F
p n
p n
V>0 V<0
Reverse bias Forward bias
p-n Junction (p-n diode)
 A p-n junction is a junction formed by combining p-type and n-type
semiconductors together in very close contact.
 In p-n junction, the current is only allowed to flow along one direction
from p-type to n-type materials.
i
p n
V<0 V>0
depletion layer
- +
Solar Cells
Light-emitting Diodes
Diode Lasers
Photodetectors
Transistors
P-N Junction (p-n diode)
 A p-n junction is the basic device component for many
functional electronic devices listed above.

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Harnessing the Sun with Solar Energy

  • 1. Solar Energy (The Ultimate Renewable Resource) Under the guidance of :- Presented by :- Dr. IMRAN KHAN Name:- SHREYA SINHA Dept. of (EE) Roll No:- 1705320904 AZAD TECHNICAL CAMPUS Course:- B.Tech ( EE) 3RD YEAR LUCKNOW
  • 3. What is Solar Energy?  Originates with the thermonuclear fusion reactions occurring in the sun.  Represents the entire electromagnetic radiation (visible light, infrared, ultraviolet, x-rays, and radio waves).  Radiant energy from the sun has powered life on Earth for many millions of years.
  • 4. Advantages and Disadvantages  Advantages  All chemical and radioactive polluting byproducts of the thermonuclear reactions remain behind on the sun, while only pure radiant energy reaches the Earth.  Energy reaching the earth is incredible. By one calculation, 30 days of sunshine striking the Earth have the energy equivalent of the total of all the planet’s fossil fuels, both used and unused!  Disadvantages  Sun does not shine consistently.  Solar energy is a diffuse source. To harness it, we must concentrate it into an amount and form that we can use, such as heat and electricity.  Addressed by approaching the problem through: 1) collection, 2) conversion, 3) storage.
  • 5. Solar Energy to Heat Living Spaces  Proper design of a building is for it to act as a solar collector and storage unit. This is achieved through three elements: insulation, collection, and storage.
  • 6. Solar Energy to Heat Water  A flat-plate collector is used to absorb the sun’s energy to heat the water.  The water circulates throughout the closed system due to convection currents.  Tanks of hot water are used as storage.
  • 8. Solar Cells Background  1839 - French physicist A. E. Becquerel first recognized the photovoltaic effect.  1883 - first solar cell built, by Charles Fritts, coated semiconductor selenium with an extremely thin layer of gold to form the junctions.  1954 - Bell Laboratories, experimenting with semiconductors, accidentally found that silicon doped with certain impurities was very sensitive to light. Daryl Chapin, Calvin Fuller and Gerald Pearson, invented the first practical device for converting sunlight into useful electrical power. Resulted in the production of the first practical solar cells with a sunlight energy conversion efficiency of around 6%.  1958 - First spacecraft to use solar panels was US satellite Vanguard 1 http://en.wikipedia.org/wiki/Solar_cell
  • 9. Driven by Space Applications in Early Days
  • 10. The heart of a photovoltaic system is a solid-state device called a solar cell. How does it work
  • 11. Energy Band Formation in Solid  Each isolated atom has discrete energy level, with two electrons of opposite spin occupying a state.  When atoms are brought into close contact, these energy levels split.  If there are a large number of atoms, the discrete energy levels form a “continuous” band.
  • 12. Energy Band Diagram of a Conductor, Semiconductor, and Insulator a conductor a semiconductor an insulator  Semiconductor is interest because their conductivity can be readily modulated (by impurity doping or electrical potential), offering a pathway to control electronic circuits.
  • 13. Silicon - Si Si Si Si Si Si Si Si Si Shared electrons  Silicon is group IV element – with 4 electrons in their valence shell.  When silicon atoms are brought together, each atom forms covalent bond with 4 silicon atoms in a tetrahedron geometry.
  • 14. Intrinsic Semiconductor  At 0 ºK, each electron is in its lowest energy state so each covalent bond position is filled. If a small electric field is applied to the material, no electrons will move because they are bound to their individual atoms. => At 0 ºK, silicon is an insulator.  As temperature increases, the valence electrons gain thermal energy. If a valence electron gains enough energy (Eg), it may break its covalent bond and move away from its original position. This electron is free to move within the crystal.  Conductor Eg <0.1eV, many electrons can be thermally excited at room temperature.  Semiconductor Eg ~1eV, a few electrons can be excited (e.g. 1/billion)  Insulator, Eg >3-5eV, essentially no electron can be thermally excited at room temperature.
  • 15. Extrinsic Semiconductor, n-type Doping Electron - Si Si Si Si Si Si Si Si As Extra Valence band, Ev Eg = 1.1 eV Conducting band, Ec Ed ~ 0.05 eV  Doping silicon lattice with group V elements can creates extra electrons in the conduction band — negative charge carriers (n-type), As- donor.  Doping concentration #/cm3 (1016/cm3 ~ 1/million).
  • 16. Valence band, Ev Eg = 1.1 eV Conducting band, Ec Ea ~ 0.05 eV Electron - Si Si Si Si Si Si Si Si B Hole  Doping silicon with group III elements can creates empty holes in the conduction band — positive charge carriers (p-type), B-(acceptor). Extrinsic Semiconductor, p-type doping
  • 17. V I R O F p n p n V>0 V<0 Reverse bias Forward bias p-n Junction (p-n diode)  A p-n junction is a junction formed by combining p-type and n-type semiconductors together in very close contact.  In p-n junction, the current is only allowed to flow along one direction from p-type to n-type materials. i p n V<0 V>0 depletion layer - +
  • 18. Solar Cells Light-emitting Diodes Diode Lasers Photodetectors Transistors P-N Junction (p-n diode)  A p-n junction is the basic device component for many functional electronic devices listed above.